ON Semiconductort MPSW63 MPSW64 * One Watt Darlington Transistors PNP Silicon w *ON Semiconductor Preferred Device These devices are available in Pb−free package(s). Specifications herein apply to both standard and Pb−free devices. Please see our website at www.onsemi.com for specific Pb−free orderable part numbers, or contact your local ON Semiconductor sales office or representative. MAXIMUM RATINGS 1 Symbol MPSW63 MPSW64 Unit Collector −Emitter Voltage VCES −30 Vdc Collector −Base Voltage VCBO −30 Vdc Emitter −Base Voltage Rating VEBO −10 Vdc Collector Current — Continuous IC −500 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 1.0 8.0 Watt mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 2.5 20 Watts mW/°C TJ, Tstg −55 to +150 °C Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 125 °C/W Thermal Resistance, Junction to Case RqJC 50 °C/W Operating and Storage Junction Temperature Range 2 3 CASE 29−10, STYLE 1 TO−92 (TO−226AE) COLLECTOR 3 BASE 2 THERMAL CHARACTERISTICS Characteristic EMITTER 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max Unit V(BR)CES −30 — Vdc Collector Cutoff Current (VCB = −30 Vdc, IE = 0) ICBO — −100 nAdc Emitter Cutoff Current (VEB = −10 Vdc, IC = 0) IEBO — −100 nAdc Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −100 μAdc, VBE = 0) Preferred devices are ON Semiconductor recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 3 1 Publication Order Number: MPSW63/D MPSW63 MPSW64 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Symbol Characteristic Min Max 5,000 10,000 — — 10,000 20,000 — — Unit ON CHARACTERISTICS(1) DC Current Gain (IC = −10 mAdc, VCE = −5.0 Vdc) hFE MPSW63 MPSW64 (IC = −100 mAdc, VCE = −5.0 Vdc) — MPSW63 MPSW64 Collector−Emitter Saturation Voltage (IC = −100 mAdc, IB = −0.1 mAdc) VCE(sat) — −1.5 Vdc Base−Emitter On Voltage (IC = −100 mAdc, VCE = −5.0 Vdc) VBE(on) — −2.0 Vdc fT 125 — MHz SMALL−SIGNAL CHARACTERISTICS Current−Gain — Bandwidth Product(2) (IC = −10 mAdc, VCE = −5.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 2. fT = |hfe| • ftest. TYPICAL ELECTRICAL CHARACTERISTICS h FE, DC CURRENT GAIN (X1.0 k) 200 TJ = 125°C 100 70 50 −10 V 25°C 30 VCE = −2.0 V 20 −5.0 V 10 7.0 5.0 3.0 2.0 −0.3 −55°C −0.5 −0.7 −1.0 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −70 −100 −200 −300 IC, COLLECTOR CURRENT (mA) −2.0 TJ = 25°C V, VOLTAGE (VOLTS) −1.6 VBE(sat) @ IC/IB = 100 −1.2 −0.8 VBE(on) @ VCE = −5.0 V VCE(sat) @ IC/IB = 1000 IC/IB = 100 −0.4 0 −0.3 −0.5 −1.0 −3.0 −5.0 −10 −30 −50 −100 −300 VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain −2.0 TJ = 25°C −1.8 −1.6 −50 mA −100 mA −175 mA −1.4 −300 mA −1.2 −1.0 −0.8 IC = −10 mA −0.6 −0.1 −0.3 −1.0 −3.0 −10 −30 −100 −300 −1 k −3 k −10 k IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA) Figure 2. “ON” Voltage Figure 3. Collector Saturation Region http://onsemi.com 2 *APPLIES FOR IC/IB ≤ hFE/100 +3.0 +25°C TO +125°C +2.0 +1.0 −50°C TO +25°C 0 −1.0 −2.0 *RqVC FOR VCE(sat) −3.0 −4.0 −50°C TO +25°C RqVB FOR VBE −5.0 −0.3 −0.5 −1.0 20 15 C, CAPACITANCE (pF) f T , CURRENT−GAIN − BANDWIDTH PRODUCT (MHz) +5.0 +4.0 10 +25°C TO +125°C −2.0 −5.0 −10 −50 −100 −20 −300 VCE = −20 V 200 100 −10 V 60 −5.0 V 40 30 20 −0.3 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −300 Figure 4. Temperature Coefficients Figure 5. Current−Gain — Bandwidth Product −2 k Cibo 7.0 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT −1 k 100 ms 1.0 mS −500 TJ = 25°C f = 1.0 MHz 1.0 s −0.5 −1.0 −2.0 −5.0 −10 DUTY CYCLE ≤ 10% −100 −1.5 −2.0 −20 −30 TC = 25°C TA = 25°C −200 3.0 2.0 −0.1 −0.2 TJ = 25°C 400 300 IC, COLLECTOR CURRENT (mA) Cobo 5.0 600 IC, COLLECTOR CURRENT (mA) IC , COLLECTOR CURRENT (mA) R qV , TEMPERATURE COEFFICIENT (mV/ °C) MPSW63 MPSW64 −5.0 −10 −20 VR, REVERSE VOLTAGE (VOLTS) VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 6. Capacitance Figure 7. Active Region, Safe Operating Area http://onsemi.com 3 −30 MPSW63 MPSW64 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−10 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P F SEATING PLANE L K X X DIM A B C D F G H J K L N P R D G H J R 1 2 3 N C SECTION X−X N INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.135 −−− MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.457 0.533 0.407 0.482 1.15 1.39 2.42 2.66 0.46 0.61 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 3.43 −−− YLE 1: PIN 1. EMITTER 2. BASE 3. 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