NSTB60BDW1T1G PNP General Purpose and NPN Bias Resistor Transistor Combination • • • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch/3000 Unit Tape and Reel ESD Rating − Human Body Model: Class 1B ESD Rating − Machine Model: Class B These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Symbol Q1 Q2 Unit Collector-Emitter Voltage VCEO −50 50 Vdc Collector-Base Voltage VCBO −50 50 Vdc Emitter−Base Voltage VEBO −6.0 5.0 Vdc IC −150 150 mAdc Collector Current − Continuous (3) (2) Q1 R2 6 Max Unit PD 187 (Note 1) 256 (Note 2) 1.5 (Note 1) 2.0 (Note 2) mW 3 SOT−363 CASE 419B STYLE 1 RθJA 670 (Note 1) 490 (Note 2) °C/W Symbol Max Unit PD 250 (Note 1) 385 (Note 2) 2.0 (Note 1) 3.0 (Note 2) mW 1 71 = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. mW/°C ORDERING INFORMATION RθJA 493 (Note 1) 325 (Note 2) °C/W Thermal Resistance − Junction-to-Lead RθJL 188 (Note 1) 208 (Note 2) °C/W TJ, Tstg −55 to +150 °C 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 x 1.0 inch Pad © Semiconductor Components Industries, LLC, 2010 71 M G G mW/°C Thermal Resistance − Junction-to-Ambient April, 2010 − Rev. 3 2 6 Symbol Total Device Dissipation TA = 25°C Derate above 25°C Junction and Storage Temperature 4 MARKING DIAGRAM Total Device Dissipation TA = 25°C Derate above 25°C Characteristic (Both Junctions Heated) 5 (6) 1 THERMAL CHARACTERISTICS Thermal Resistance − Junction-to-Ambient R1 (5) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Characteristic (One Junction Heated) (1) Q2 (4) (TA = 25°C unless otherwise noted, common for Q1 and Q2) Rating http://onsemi.com 1 Device Package NSTB60BDW1T1G SOT−363 (Pb−Free) Shipping† 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NSTB60BDW1T1/D NSTB60BDW1T1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector-Base Breakdown Voltage (IC = −50 μAdc, IE = 0) V(BR)CBO −50 − − Vdc Collector-Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0) V(BR)CEO −50 − − Vdc Emitter−Base Breakdown Voltage (IE = −50 mAdc, IE = 0) V(BR)EBO −6.0 − − Vdc Collector−Base Cutoff Current (VCB = −50 Vdc, IE = 0) ICBO − − −0.1 mA Emitter−Base Cutoff Current (VEB = −6.0 Vdc, IB = 0) IEBO − − −0.1 mA VCE(sat) − − −0.5 Vdc hFE 120 − 560 − fT − 140 − MHz COB − 3.5 − pF Collector-Base Breakdown Voltage (IC = 50 μA, IE = 0) V(BR)CBO 50 − − Vdc Collector-Emitter Breakdown Voltage (IC = 1.0 mA, IB = 0) (Note 3) V(BR)CEO 50 − − Vdc Collector−Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc Characteristic Q1 Collector-Emitter Saturation Voltage (IC = −50 mAdc, IB = −5.0 mAdc) (Note 3) DC Current Gain (VCE = −10 V, IC = −5.0 mA) (Note 3) Transition Frequency (VCE = −12 Vdc, IC = −2.0 mAdc, f = 100 MHz) Output Capacitance (VCB = −12 Vdc, IE = 0 Adc, f = 1.0 MHz) Q2 Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO − − 0.13 mAdc VCE(sat) − − 0.25 Vdc DC Current Gain (VCE = 10 V, IC = 5.0 mA) (Note 3) hFE 80 − − Output Voltage (on) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW) (Note 3) VOL − − 0.2 Vdc Output Voltage (off) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) (Note 3) Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 5.0 mA) (Note 3) VOH 4.9 − − Vdc Input Resistor (Note 3) R1 15.4 22 28.6 kΩ Resistor Ratio (Note 3) R2/R1 1.70 2.13 2.55 3. Pulse Test: Pulse Width < 300 μs, Duty Cycle < 2.0% http://onsemi.com 2 NSTB60BDW1T1G Typical Electrical Characteristics − PNP Transistor -1.0 VCE = -10 V TA = 25°C 1.5 -0.9 1.0 0.7 0.5 -0.7 VBE(on) @ VCE = -10 V -0.6 -0.5 -0.4 -0.3 VCE(sat) @ IC/IB = 10 -0.1 0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mAdc) Figure 1. Normalized DC Current Gain -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mAdc) -50 -100 Figure 2. “Saturation” and “On” Voltages 10 400 300 Cib 7.0 200 C, CAPACITANCE (pF) f T, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz) VBE(sat) @ IC/IB = 10 -0.2 0.3 0.2 -0.2 VCE = -10 V TA = 25°C 150 100 80 60 5.0 TA = 25°C 3.0 Cob 2.0 40 30 20 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 IC, COLLECTOR CURRENT (mAdc) 1.0 -0.4 -0.6 -50 Figure 3. Current−Gain − Bandwidth Product 0.3 r b′, BASE SPREADING RESISTANCE (OHMS) 0.5 VCE = -10 V f = 1.0 kHz TA = 25°C 0.1 0.05 0.03 0.01 -0.1 -0.2 -0.5 -1.0 -2.0 IC, COLLECTOR CURRENT (mAdc) -5.0 -1.0 -2.0 -4.0 -6.0 -10 VR, REVERSE VOLTAGE (VOLTS) -20 -30 -40 Figure 4. Capacitances 1.0 hob, OUTPUT ADMITTANCE (OHMS) TA = 25°C -0.8 V, VOLTAGE (VOLTS) hFE, NORMALIZED DC CURRENT GAIN 2.0 150 140 130 120 110 100 -0.1 -10 VCE = -10 V f = 1.0 kHz TA = 25°C Figure 5. Output Admittance -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 IC, COLLECTOR CURRENT (mAdc) -5.0 Figure 6. Base Spreading Resistance http://onsemi.com 3 -10 NSTB60BDW1T1G 1 1000 IC/IB = 10 TA = −40°C VCE = 10 V 25°C hFE, DC CURRENT GAIN VCE(sat) MAXIMUM COLLECTOR VOLTAGE (V) Typical Electrical Characteristics − NPN Transistor 85°C 0.1 0.01 0 10 20 30 40 50 60 IC, COLLECTOR CURRENT (mA) 70 100 25°C 1 80 10 IC, COLLECTOR CURRENT (mA) 1 100 2.5 2 1.5 1 0.5 0 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (V) 1 0.1 VO = 5 V 0 2 4 6 8 10 Vin, INPUT VOLTAGE (V) TA = −40°C 25°C 85°C 1 VO = 0.2 V 0.1 0 10 12 Figure 10. Output Current versus Input Voltage 100 10 −40°C 10 0.01 60 25°C TA = 85°C Figure 9. Output Capacitance Vin, INPUT VOLTAGE (V) Cob, CAPACITANCE (pF) IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 A TA = 25°C 3 100 Figure 8. DC Current Gain 4 3.5 −40°C 10 Figure 7. Maximum Collector Voltage versus Collector Current 0 TA = 85°C 20 30 40 50 IC, COLLECTOR CURRENT (mA) 60 Figure 11. Input Voltage versus Output Current http://onsemi.com 4 14 NSTB60BDW1T1G PACKAGE DIMENSIONS SOT−363/SC−88/SC70−6 CASE 419B−02 ISSUE W D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. e 6 5 4 HE DIM A A1 A3 b C D E e L HE −E− 1 2 3 b 6 PL 0.2 (0.008) M E M A3 STYLE 1: PIN 1. 2. 3. 4. 5. 6. C A A1 MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 EMITTER 2 BASE 2 COLLECTOR 1 EMITTER 1 BASE 1 COLLECTOR 2 L SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches SC−88/SC70−6/SOT−363 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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