IRLH7134PbF HEXFET® Power MOSFET VDS 40 V RDS(on) max 3.3 mΩ 39 nC (@VGS = 10V) Qg (typical) ID 50 (@Tc(Bottom) = 25°C) i A PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Features Low RDSon (≤4.7mW @ VGS = 4.5V ) Low Thermal Resistance to PCB (< 1.2°C/W) Low Profile (<0.9 mm) results in Industry-Standard Pinout ⇒ Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Orderable part number Package Type IRLH7134TRPBF IRLH7134TR2PBF Benefits Lower Conduction Losses Enables better thermal dissipation Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity PQFN 5mm x 6mm Tape and Reel 4000 PQFN 5mm x 6mm Tape and Reel 400 Note EOL notice # 259 Absolute Maximum Ratings VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C ID @ TC = 25°C IDM PD @TA = 25°C PD @ TC(Bottom) = 25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Power Dissipation Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range g g c g Max. 40 ± 16 26 21 134 85 50 hi hi i 640 3.6 104 0.029 -55 to + 150 Units V A W W/°C °C Notes through are on page 9 1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback June 2, 2015 IRLH7134PbF Static @ TJ = 25°C (unless otherwise specified) BVDSS ΔΒVDSS/ΔTJ RDS(on) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Min. 40 ––– ––– VGS(th) ΔVGS(th) IDSS Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Output Charge 1.0 ––– ––– ––– ––– ––– 120 ––– ––– ––– ––– ––– ––– ––– Typ. ––– 37 2.8 3.9 ––– -5.6 ––– ––– ––– ––– ––– 39 9.0 4.5 16 9.5 20.5 23 Max. Units Conditions ––– V VGS = 0V, ID = 250uA ––– mV/°C Reference to 25°C, ID = 1.0mA 3.3 mΩ VGS = 10V, ID = 50A 4.9 VGS = 4.5V, ID = 40A 2.5 V VDS = VGS, ID = 100μA ––– mV/°C VDS = 40V, VGS = 0V 20 μA 250 VDS = 40V, VGS = 0V, TJ = 125°C VGS = 16V 100 nA -100 VGS = -16V ––– S VDS = 10V, ID = 50A 58 ––– VDS = 20V ––– VGS = 4.5V nC ––– ID = 50A ––– ––– ––– nC VDS = 16V, VGS = 0V Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– ––– ––– ––– ––– ––– 0.6 21 75 18 13 3720 610 350 ––– ––– ––– ––– ––– ––– ––– ––– e e Ω ns pF VDD = 20V, VGS = 10V ID = 50A RG=1.7Ω VGS = 0V VDS = 25V ƒ = 1.0MHz Avalanche Characteristics Parameter Single Pulse Avalanche Energy Avalanche Current EAS IAR c Typ. ––– ––– d Units mJ A Max. 125 50 Diode Characteristics IS Parameter Continuous Source Current ISM (Body Diode) Pulsed Source Current VSD trr Qrr ton (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units ––– ––– 50 ––– c ––– i 640 A Conditions MOSFET symbol showing the integral reverse D G p-n junction diode. TJ = 25°C, IS = 50A, VGS = 0V TJ = 25°C, IF = 50A, VDD = 20V di/dt = 400A/μs ––– ––– 1.3 V ––– 25 38 ns ––– 74 110 nC Time is dominated by parasitic Inductance e e Thermal Resistance RθJC (Bottom) RθJC (Top) RθJA RθJA (<10s) 2 f f Junction-to-Case Junction-to-Case Junction-to-Ambient Junction-to-Ambient Parameter g g www.irf.com © 2015 International Rectifier Typ. ––– ––– ––– ––– Submit Datasheet Feedback Max. 1.2 30 35 22 Units °C/W June 2, 2015 S IRLH7134PbF 1000 1000 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15.0V 10.0V 4.50V 4.00V 3.30V 3.10V 2.90V 2.70V 10 BOTTOM 2.70V 10 ≤60μs PULSE WIDTH ≤60μs PULSE WIDTH 2.70V Tj = 150°C Tj = 25°C 1 1 0.1 100 1 10 0.1 100 1 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 1.8 RDS(on) , Drain-to-Source On Resistance (Normalized) 1000 ID, Drain-to-Source Current(A) VGS 15.0V 10.0V 4.50V 4.00V 3.30V 3.10V 2.90V 2.70V VDS = 25V ≤60μs PULSE WIDTH 100 TJ = 150°C 10 TJ = 25°C 1 ID = 50A VGS = 10V 1.6 1.4 1.2 1.0 0.8 0.6 0.1 1 2 3 -60 -40 -20 0 4 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature 100000 14 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd C, Capacitance (pF) Coss = Cds + Cgd 10000 Ciss 1000 Coss Crss ID= 50A 12 10 VDS= 32V VDS= 20V VDS= 8.0V 8 6 4 2 0 100 0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 3 www.irf.com © 2015 International Rectifier 20 40 60 80 100 QG Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Submit Datasheet Feedback June 2, 2015 IRLH7134PbF 10000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 TJ = 150°C 100 TJ = 25°C 10 OPERATION IN THIS AREA LIMITED BY RDS(on) 1000 VGS = 0V 0.4 0.6 0.8 1.0 1.2 1.4 1msec 10 Limited by Package DC 1 0.1 1.6 1 10 100 VDS, Drain-to-Source Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 140 2.8 VGS(th), Gate threshold Voltage (V) Limited By Package 120 ID, Drain Current (A) 10msec Tc = 25°C Tj = 150°C Single Pulse 0.1 1.0 0.2 100μsec 100 100 80 60 40 20 0 25 50 75 100 125 150 2.6 2.4 2.2 2.0 1.8 ID = 100μA 1.6 ID = 250μA ID = 1.0mA 1.4 ID = 1.0A 1.2 1.0 0.8 -75 -50 -25 TC, Case Temperature (°C) 0 25 50 75 100 125 150 TJ , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Case (Bottom) Temperature Fig 10. Threshold Voltage vs. Temperature Thermal Response ( ZthJC ) 10 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom) 4 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback June 2, 2015 500 12 EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (mΩ) IRLH7134PbF ID = 50A 10 8 6 TJ = 125°C 4 TJ = 25°C 2 ID 9.5A 21A BOTTOM 50A TOP 400 300 200 100 0 0 2 4 6 8 10 12 25 50 75 100 125 150 Starting TJ , Junction Temperature (°C) VGS, Gate -to -Source Voltage (V) Fig 13. Maximum Avalanche Energy vs. Drain Current Fig 12. On-Resistance vs. Gate Voltage V(BR)DSS tp 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V A Fig 14a. Unclamped Inductive Test Circuit VDS VGS RG RD Fig 14b. Unclamped Inductive Waveforms VDS 90% D.U.T. + -VDD V10V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 Fig 15a. Switching Time Test Circuit 5 I AS 0.01Ω tp www.irf.com © 2015 International Rectifier 10% VGS td(on) tr td(off) tf Fig 15b. Switching Time Waveforms Submit Datasheet Feedback June 2, 2015 IRLH7134PbF D.U.T Driver Gate Drive + - - * D.U.T. ISD Waveform Reverse Recovery Current + RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - D= Period P.W. + V DD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Id Vds Vgs L DUT 0 1K S VCC Vgs(th) Qgs1 Qgs2 Fig 17. Gate Charge Test Circuit 6 www.irf.com © 2015 International Rectifier Qgd Qgodr Fig 18. Gate Charge Waveform Submit Datasheet Feedback June 2, 2015 IRLH7134PbF PQFN 5x6 Outline "E" Package Details PQFN 5x6 Outline "G" Package Details For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 7 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback June 2, 2015 IRLH7134PbF PQFN 5x6 Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE XXXX XYWWX XXXXX ASSEMBLY SITE CODE (Per SCOP 200-002) PIN 1 IDENTIFIER PART NUMBER (“4 or 5 digits”) MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) PQFN 5x6 Tape and Reel REEL DIMENSIONS TAPE DIMENSIONS CODE Ao Bo Ko W P1 DES CRIPTION Dimension des ign to accommodate the component width Dimension des ign to accommodate the component lenght Dimension des ign to accommodate the component thickness Overall width of the carrier tape Pitch between s ucces s ive cavity centers QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE Note: All dimens ion are nominal Package T ype Reel Diameter (Inch) QT Y Reel Width W1 (mm) Ao (mm) Bo (mm) Ko (mm) P1 (mm) W (mm) Pin 1 Quadrant 5 X 6 PQF N 13 4000 12.4 6.300 5.300 1.20 8.00 12 Q1 Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback June 2, 2015 IRLH7134PbF Qualification information† Indus trial Qualification level (per JE DE C JE S D47F Moisture Sensitivity Level PQFN 5mm x 6mm RoHS compliant †† ††† guidelines ) MS L1 ††† (per JE DE C J-S T D-020D ) Yes Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.099mH, RG = 50Ω, IAS = 50A. Pulse width ≤ 400μs; duty cycle ≤ 2%. Rθ is measured at TJ of approximately 90°C. When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Calculated continuous current based on maximum allowable junction temperature. Package is limited to 50A by die-source to lead-frame bonding technology Revision History Date 5/13/2014 6/2/2015 Comment • Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #259) • Updated Tape and Reel on page 8. • Updated data sheet based on corporate template. • Updated package outline for “option E” and added package outline for “option G” on page 7. • Updated "IFX" logo on page 1 & 9. • Updated tape and reel on page 8. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 9 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback June 2, 2015