IRFH5302PbF Product Datasheet

IRFH5302PbF
HEXFET® Power MOSFET
VDS
30
V
2.1
mΩ
Qg (typical)
29
nC
RG (typical)
1.6
Ω
RDS(on) max
(@VGS = 10V)
ID
(@Tc(Bottom) = 25°C)
h
100
A
PQFN 5X6 mm
Applications
• OR-ing MOSFET for 12V (typical) Bus in-Rush Current
• Synchronous MOSFET for buck converters
• Battery Operated DC Motor Inverter MOSFET
Features and Benefits
Benefits
Features
Low RDSon (≤ 2.1mΩ)
Low Thermal Resistance to PCB (≤ 1.2°C/W)
100% Rg tested
Low Profile (≤ 0.9 mm)
results in
⇒
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Orderable part number
Package Type
IRFH5302TRPbF
IRFH5302TR2PbF
Lower Conduction Losses
Enable better thermal dissipation
Increased Reliability
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Standard Pack
Form
Quantity
PQFN 5mm x 6mm
Tape and Reel
4000
PQFN 5mm x 6mm
Tape and Reel
400
Note
EOL Notice #259
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @ TC(Bottom) = 25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
g
g
c
g
Max.
30
± 20
32
26
100
100
400
3.6
100
0.029
-55 to + 150
h
h
Units
V
A
W
W/°C
°C
Notes  through † are on page 9
1
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IRFH5302PbF
Static @ TJ = 25°C (unless otherwise specified)
BVDSS
ΔΒVDSS/ΔTJ
RDS(on)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
VGS(th)
ΔVGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
gfs
Qg
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Min.
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
180
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.02
1.8
2.8
1.8
-6.8
–––
–––
–––
–––
–––
76
29
7.7
4.4
9.7
8.2
14
19
1.6
18
51
22
18
4400
890
360
Conditions
Max. Units
–––
V VGS = 0V, ID = 250μA
––– V/°C Reference to 25°C, ID = 1mA
VGS = 10V, ID = 50A
2.1
mΩ
VGS = 4.5V, ID = 50A
3.5
2.35
V
VDS = VGS, ID = 100μA
––– mV/°C
VDS = 24V, VGS = 0V
5.0
μA
VDS = 24V, VGS = 0V, TJ = 125°C
150
VGS = 20V
100
nA
VGS = -20V
-100
–––
S VDS = 15V, ID = 50A
–––
nC VGS = 10V, VDS = 15V, ID = 50A
41
VDS = 15V
–––
VGS = 4.5V
–––
nC
ID = 50A
–––
–––
See Fig.17 & 18
–––
–––
nC VDS = 16V, VGS = 0V
Ω
2.5
VDD = 15V, VGS = 4.5V
–––
ID = 50A
–––
ns
RG=1.8Ω
–––
–––
See Fig.15
VGS = 0V
–––
pF VDS = 15V
–––
–––
ƒ = 1.0MHz
e
e
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Avalanche Current
EAS
IAR
c
Typ.
–––
–––
d
Units
mJ
A
Max.
130
50
Diode Characteristics
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
IS
ISM
Min.
Max. Units
Conditions
MOSFET symbol
–––
––– 100
showing the
A
G
integral reverse
–––
–––
400
p-n junction diode.
–––
–––
1.0
V TJ = 25°C, IS = 50A, VGS = 0V
–––
20
30
ns TJ = 25°C, IF = 50A, VDD = 15V
–––
32
48
nC di/dt = 300A/μs
Time is dominated by parasitic Inductance
h
c
VSD
trr
Qrr
ton
Typ.
e
e
Thermal Resistance
RθJC (Bottom)
RθJC (Top)
RθJA
RθJA (<10s)
2
f
f
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Parameter
g
g
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Typ.
–––
–––
–––
–––
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Max.
1.2
15
35
22
Units
°C/W
March 19, 2015
D
S
IRFH5302PbF
ID, Drain-to-Source Current (A)
TOP
100
BOTTOM
1000
VGS
10V
4.5V
3.8V
3.5V
3.3V
3.0V
2.8V
2.5V
TOP
ID, Drain-to-Source Current (A)
1000
10
1
2.5
V
≤ 60μs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
BOTTOM
10
2.5
V
≤ 60μs PULSE WIDTH
Tj = 150°C
1
100
0.1
V DS, Drain-to-Source Voltage (V)
100
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
10
Fig 2. Typical Output Characteristics
1000
100
TJ = 150°C
10
TJ = 25°C
1
0.1
V DS = 15V
≤ 60μs PULSE WIDTH
0.01
1.0
2.0
3.0
4.0
5.0
ID = 50A
V GS = 10V
1.5
1.0
0.5
-60 -40 -20
V GS, Gate-to-Source Voltage (V)
100000
20
40
60
80 100 120 140 160
Fig 4. Normalized On-Resistance Vs. Temperature
14
V GS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = Cds + C gd
10000
Ciss
Coss
1000
0
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
C, Capacitance (pF)
1
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Crss
ID= 50A
12
V DS= 24V
V DS= 15V
10
8
6
4
2
0
100
1
10
100
0
Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage
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20
40
60
80
QG Total Gate Charge (nC)
V DS, Drain-to-Source Voltage (V)
3
VGS
10V
4.5V
3.8V
3.5V
3.3V
3.0V
2.8V
2.5V
Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage
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IRFH5302PbF
1000.0
10000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
TJ = 150°C
100.0
10.0
TJ = 25°C
1.0
1000
1msec
100
10
10msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
V GS = 0V
0.1
0.1
0.2
0.4
0.6
0.8
1.0
0.1
1.2
1
10
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
200
3.0
ID = 1.0A
ID = 1.0mA
V GS(th) Gate threshold Voltage (V)
LIMITED BY PACKAGE
160
120
80
40
0
25
50
75
100
125
100
V DS, Drain-to-Source Voltage (V)
V SD, Source-to-Drain Voltage (V)
2.5
ID = 250μA
ID = 100μA
2.0
1.5
1.0
0.5
150
-75 -50 -25
TC, Case Temperature (°C)
0
25
50
75
100 125 150 175
TJ , Temperature ( °C )
Fig 9. Maximum Drain Current Vs.
Case (Bottom) Temperature
Fig 10. Threshold Voltage Vs. Temperature
10
Thermal Response ( Z thJC )
ID, Drain Current (A)
100μsec
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
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600
6.0
ID = 50A
EAS, Single Pulse Avalanche Energy (mJ)
RDS(on), Drain-to -Source On Resistance ( mΩ)
IRFH5302PbF
5.0
4.0
TJ = 125°C
3.0
2.0
TJ = 25°C
1.0
2
4
6
8
10
12
14
16
18
ID
8.7A
TOP
16A
BOTTOM 50A
500
400
300
200
100
0
20
25
V GS, Gate-to-Source Voltage (V)
50
75
100
125
Starting TJ, Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
V(BR)DSS
tp
15V
DRIVER
L
VDS
D.U.T
RG
+
V
- DD
IAS
20V
A
Fig 14a. Unclamped Inductive Test Circuit
VDS
VGS
RG
RD
Fig 14b. Unclamped Inductive Waveforms
VDS
90%
D.U.T.
+
-VDD
V10V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
Fig 15a. Switching Time Test Circuit
5
I AS
0.01Ω
tp
150
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10%
VGS
td(on)
tr
td(off)
tf
Fig 15b. Switching Time Waveforms
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IRFH5302PbF
D.U.T
Driver Gate Drive
ƒ
+
‚
-
-
„
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+

RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D=
Period
P.W.
+
V DD
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
-
Body Diode
VDD
Forward Drop
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
L
DUT
0
1K
S
VCC
Vgs(th)
Qgs1 Qgs2
Fig 17. Gate Charge Test Circuit
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Qgd
Qgodr
Fig 18. Gate Charge Waveform
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IRFH5302PbF
PQFN 5x6 Outline "B" Package Details
For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136:
http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 5x6 Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
PIN 1
IDENTIFIER
XXXX
XYWWX
XXXXX
PART NUMBER
(“4 or 5 digits”)
MARKING CODE
(Per Marking Spec)
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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IRFH5302PbF
PQFN Tape and Reel
REEL DIMENSIONS
TAPE DIMENSIONS
DES CRIPTION
CODE
Ao
Dimension design to accommodate the component width
Bo
Dimension design to accommodate the component lenght
Ko
Dimension design to accommodate the component thickness
Overall width of the carrier tape
Pitch between s ucces sive cavity centers
W
P1
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Note: All dimens ion are nominal
Package
T ype
Reel
Diameter
(Inch)
QTY
Reel
Width
W1
(mm)
Ao
(mm)
Bo
(mm)
Ko
(mm)
P1
(mm)
W
(mm)
Pin 1
Quadrant
5 X 6 PQFN
13
4000
12.4
6.300
5.300
1.20
8.00
12
Q1
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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IRFH5302PbF
Qualification information†
Indus trial
Qualification level
(per JE DE C JE S D47F
Moisture Sensitivity Level
PQFN 5mm x 6mm
RoHS compliant
†
††
†††
††
†††
guidelines )
MS L1
†††
(per JE DE C J-S T D-020D
)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 0.103mH, RG = 25Ω, IAS = 50A.
ƒ Pulse width ≤ 400μs; duty cycle ≤ 2%.
„ Rθ is measured at T J of approximately 90°C.
… When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
† Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by production test capability
Revision History
Date
3/10/2014
3/19/2015
Comment
• Updated ordering information to reflect the End-Of-Life (EOL) of the mini-reel option (EOL notice #259).
• Updated data sheet with the new IR corporate template.
• Updated package outline and tape and reel on pages 7 and 8.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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