IRFH5302PbF HEXFET® Power MOSFET VDS 30 V 2.1 mΩ Qg (typical) 29 nC RG (typical) 1.6 Ω RDS(on) max (@VGS = 10V) ID (@Tc(Bottom) = 25°C) h 100 A PQFN 5X6 mm Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Synchronous MOSFET for buck converters • Battery Operated DC Motor Inverter MOSFET Features and Benefits Benefits Features Low RDSon (≤ 2.1mΩ) Low Thermal Resistance to PCB (≤ 1.2°C/W) 100% Rg tested Low Profile (≤ 0.9 mm) results in ⇒ Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Orderable part number Package Type IRFH5302TRPbF IRFH5302TR2PbF Lower Conduction Losses Enable better thermal dissipation Increased Reliability Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity PQFN 5mm x 6mm Tape and Reel 4000 PQFN 5mm x 6mm Tape and Reel 400 Note EOL Notice #259 Absolute Maximum Ratings VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @ TC(Bottom) = 25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range g g c g Max. 30 ± 20 32 26 100 100 400 3.6 100 0.029 -55 to + 150 h h Units V A W W/°C °C Notes through are on page 9 1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 19, 2015 IRFH5302PbF Static @ TJ = 25°C (unless otherwise specified) BVDSS ΔΒVDSS/ΔTJ RDS(on) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance VGS(th) ΔVGS(th) IDSS Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance gfs Qg Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Min. 30 ––– ––– ––– 1.35 ––– ––– ––– ––– ––– 180 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.02 1.8 2.8 1.8 -6.8 ––– ––– ––– ––– ––– 76 29 7.7 4.4 9.7 8.2 14 19 1.6 18 51 22 18 4400 890 360 Conditions Max. Units ––– V VGS = 0V, ID = 250μA ––– V/°C Reference to 25°C, ID = 1mA VGS = 10V, ID = 50A 2.1 mΩ VGS = 4.5V, ID = 50A 3.5 2.35 V VDS = VGS, ID = 100μA ––– mV/°C VDS = 24V, VGS = 0V 5.0 μA VDS = 24V, VGS = 0V, TJ = 125°C 150 VGS = 20V 100 nA VGS = -20V -100 ––– S VDS = 15V, ID = 50A ––– nC VGS = 10V, VDS = 15V, ID = 50A 41 VDS = 15V ––– VGS = 4.5V ––– nC ID = 50A ––– ––– See Fig.17 & 18 ––– ––– nC VDS = 16V, VGS = 0V Ω 2.5 VDD = 15V, VGS = 4.5V ––– ID = 50A ––– ns RG=1.8Ω ––– ––– See Fig.15 VGS = 0V ––– pF VDS = 15V ––– ––– ƒ = 1.0MHz e e Avalanche Characteristics Parameter Single Pulse Avalanche Energy Avalanche Current EAS IAR c Typ. ––– ––– d Units mJ A Max. 130 50 Diode Characteristics Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time IS ISM Min. Max. Units Conditions MOSFET symbol ––– ––– 100 showing the A G integral reverse ––– ––– 400 p-n junction diode. ––– ––– 1.0 V TJ = 25°C, IS = 50A, VGS = 0V ––– 20 30 ns TJ = 25°C, IF = 50A, VDD = 15V ––– 32 48 nC di/dt = 300A/μs Time is dominated by parasitic Inductance h c VSD trr Qrr ton Typ. e e Thermal Resistance RθJC (Bottom) RθJC (Top) RθJA RθJA (<10s) 2 f f Junction-to-Case Junction-to-Case Junction-to-Ambient Junction-to-Ambient Parameter g g www.irf.com © 2015 International Rectifier Typ. ––– ––– ––– ––– Submit Datasheet Feedback Max. 1.2 15 35 22 Units °C/W March 19, 2015 D S IRFH5302PbF ID, Drain-to-Source Current (A) TOP 100 BOTTOM 1000 VGS 10V 4.5V 3.8V 3.5V 3.3V 3.0V 2.8V 2.5V TOP ID, Drain-to-Source Current (A) 1000 10 1 2.5 V ≤ 60μs PULSE WIDTH Tj = 25°C 0.1 0.1 1 10 100 BOTTOM 10 2.5 V ≤ 60μs PULSE WIDTH Tj = 150°C 1 100 0.1 V DS, Drain-to-Source Voltage (V) 100 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 10 Fig 2. Typical Output Characteristics 1000 100 TJ = 150°C 10 TJ = 25°C 1 0.1 V DS = 15V ≤ 60μs PULSE WIDTH 0.01 1.0 2.0 3.0 4.0 5.0 ID = 50A V GS = 10V 1.5 1.0 0.5 -60 -40 -20 V GS, Gate-to-Source Voltage (V) 100000 20 40 60 80 100 120 140 160 Fig 4. Normalized On-Resistance Vs. Temperature 14 V GS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = Cds + C gd 10000 Ciss Coss 1000 0 TJ , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics C, Capacitance (pF) 1 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Crss ID= 50A 12 V DS= 24V V DS= 15V 10 8 6 4 2 0 100 1 10 100 0 Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage www.irf.com © 2015 International Rectifier 20 40 60 80 QG Total Gate Charge (nC) V DS, Drain-to-Source Voltage (V) 3 VGS 10V 4.5V 3.8V 3.5V 3.3V 3.0V 2.8V 2.5V Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage Submit Datasheet Feedback March 19, 2015 IRFH5302PbF 1000.0 10000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) TJ = 150°C 100.0 10.0 TJ = 25°C 1.0 1000 1msec 100 10 10msec 1 Tc = 25°C Tj = 150°C Single Pulse V GS = 0V 0.1 0.1 0.2 0.4 0.6 0.8 1.0 0.1 1.2 1 10 Fig 8. Maximum Safe Operating Area Fig 7. Typical Source-Drain Diode Forward Voltage 200 3.0 ID = 1.0A ID = 1.0mA V GS(th) Gate threshold Voltage (V) LIMITED BY PACKAGE 160 120 80 40 0 25 50 75 100 125 100 V DS, Drain-to-Source Voltage (V) V SD, Source-to-Drain Voltage (V) 2.5 ID = 250μA ID = 100μA 2.0 1.5 1.0 0.5 150 -75 -50 -25 TC, Case Temperature (°C) 0 25 50 75 100 125 150 175 TJ , Temperature ( °C ) Fig 9. Maximum Drain Current Vs. Case (Bottom) Temperature Fig 10. Threshold Voltage Vs. Temperature 10 Thermal Response ( Z thJC ) ID, Drain Current (A) 100μsec 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom) 4 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 19, 2015 600 6.0 ID = 50A EAS, Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance ( mΩ) IRFH5302PbF 5.0 4.0 TJ = 125°C 3.0 2.0 TJ = 25°C 1.0 2 4 6 8 10 12 14 16 18 ID 8.7A TOP 16A BOTTOM 50A 500 400 300 200 100 0 20 25 V GS, Gate-to-Source Voltage (V) 50 75 100 125 Starting TJ, Junction Temperature (°C) Fig 13. Maximum Avalanche Energy vs. Drain Current Fig 12. On-Resistance vs. Gate Voltage V(BR)DSS tp 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V A Fig 14a. Unclamped Inductive Test Circuit VDS VGS RG RD Fig 14b. Unclamped Inductive Waveforms VDS 90% D.U.T. + -VDD V10V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 Fig 15a. Switching Time Test Circuit 5 I AS 0.01Ω tp 150 www.irf.com © 2015 International Rectifier 10% VGS td(on) tr td(off) tf Fig 15b. Switching Time Waveforms Submit Datasheet Feedback March 19, 2015 IRFH5302PbF D.U.T Driver Gate Drive + - - * D.U.T. ISD Waveform Reverse Recovery Current + RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - D= Period P.W. + V DD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Id Vds Vgs L DUT 0 1K S VCC Vgs(th) Qgs1 Qgs2 Fig 17. Gate Charge Test Circuit 6 www.irf.com © 2015 International Rectifier Qgd Qgodr Fig 18. Gate Charge Waveform Submit Datasheet Feedback March 19, 2015 IRFH5302PbF PQFN 5x6 Outline "B" Package Details For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN 5x6 Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) PIN 1 IDENTIFIER XXXX XYWWX XXXXX PART NUMBER (“4 or 5 digits”) MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 7 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 19, 2015 IRFH5302PbF PQFN Tape and Reel REEL DIMENSIONS TAPE DIMENSIONS DES CRIPTION CODE Ao Dimension design to accommodate the component width Bo Dimension design to accommodate the component lenght Ko Dimension design to accommodate the component thickness Overall width of the carrier tape Pitch between s ucces sive cavity centers W P1 QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE Note: All dimens ion are nominal Package T ype Reel Diameter (Inch) QTY Reel Width W1 (mm) Ao (mm) Bo (mm) Ko (mm) P1 (mm) W (mm) Pin 1 Quadrant 5 X 6 PQFN 13 4000 12.4 6.300 5.300 1.20 8.00 12 Q1 Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 19, 2015 IRFH5302PbF Qualification information† Indus trial Qualification level (per JE DE C JE S D47F Moisture Sensitivity Level PQFN 5mm x 6mm RoHS compliant †† ††† guidelines ) MS L1 ††† (per JE DE C J-S T D-020D ) Yes Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.103mH, RG = 25Ω, IAS = 50A. Pulse width ≤ 400μs; duty cycle ≤ 2%. Rθ is measured at T J of approximately 90°C. When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by production test capability Revision History Date 3/10/2014 3/19/2015 Comment • Updated ordering information to reflect the End-Of-Life (EOL) of the mini-reel option (EOL notice #259). • Updated data sheet with the new IR corporate template. • Updated package outline and tape and reel on pages 7 and 8. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 9 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 19, 2015