IRFH5004PbF HEXFET® Power MOSFET V DS 40 V R DS(on) max 2.6 mΩ Qg (typical) 73 nC R G (typical) 1.2 Ω (@VGS = 10V) ID (@Tmb = 25°C) 100 h A PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon (≤ 2.6mΩ) Low Thermal Resistance to PCB (≤ 0.8°C/W) 100% Rg tested Low Profile (≤ 0.9 mm) Lower Conduction Losses Enables better thermal dissipation Increased Reliability results in Increased Power Density Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Base Part Number IRFH5004PBF Package Type Standard Pack Form Quantity PQFN 5mm x 6mm Tape and Reel 4000 1000 PQFN 5mm x 6mm Tape and Reel ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Orderable part number Note IRFH5004TRPBF IRFH5004TR2PBF EOL notice #259 Absolute Maximum Ratings Max. Units VDS VGS Drain-to-Source Voltage Gate-to-Source Voltage 40 ±20 V ID @ TA = 25°C ID @ TA = 70°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V 28 23 ID @ Tmb = 25°C ID @ Tmb = 100°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation 100 100 Parameter IDM PD @TA = 25°C c PD @ Tmb = 25°C g Power Dissipation g TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range h h 400 3.6 156 g 0.029 -55 to + 150 A W W/°C °C Notes through are on page 9 1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015 IRFH5004PbF Static @ TJ = 25°C (unless otherwise specified) BVDSS ΔΒVDSS/ΔTJ RDS(on) VGS(th) ΔVGS(th) IDSS IGSS Output Charge Min. 40 ––– ––– 2.0 ––– ––– ––– ––– ––– 91 ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.04 2.1 ––– -5.6 ––– ––– ––– ––– ––– 73 15 6.1 27 25 33.1 27 Conditions Max. Units ––– V VGS = 0V, ID = 250μA ––– V/°C Reference to 25°C, ID = 1mA 2.6 mΩ VGS = 10V, ID = 50A 4.0 V VDS = VGS, ID = 150μA ––– mV/°C VDS = 40V, VGS = 0V 20 μA VDS = 40V, VGS = 0V, TJ = 125°C 250 VGS = 20V 100 nA -100 VGS = -20V ––– S VDS = 15V, ID = 50A 110 ––– VDS = 20V VGS = 10V ––– nC ––– ID = 50A ––– See Fig.17 & 18 ––– ––– nC VDS = 16V, VGS = 0V Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– ––– ––– ––– ––– ––– 1.2 13 39 28 16 4490 970 460 ––– ––– ––– ––– ––– ––– ––– ––– Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss e Ω ns pF VDD = 20V, VGS = 10V ID = 50A RG=1.8Ω See Fig.15 VGS = 0V VDS = 20V ƒ = 1.0MHz Avalanche Characteristics Parameter Single Pulse Avalanche Energy Avalanche Current EAS IAR Diode Characteristics c Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton Typ. ––– ––– d Min. Typ. Max. Units h ––– ––– 100 c ––– A ––– 400 Units mJ A Max. 340 50 Conditions MOSFET symbol showing the integral reverse D G p-n junction diode. TJ = 25°C, IS = 50A, VGS = 0V TJ = 25°C, IF = 50A, VDD = 20V di/dt = 300A/μs ––– ––– 1.0 V ––– 32 48 ns ––– 100 150 nC Time is dominated by parasitic Inductance S e e Thermal Resistance Parameter R θJC-mb R θJC (Top) R θJA R θJA (<10s) 2 Junction-to-Mounting Base Junction-to-Case f g Junction-to-Ambient g Junction-to-Ambient www.irf.com © 2015 International Rectifier Typ. Max. 0.5 0.8 ––– ––– 15 35 ––– 33 Submit Datasheet Feedback Units °C/W May 19, 2015 IRFH5004PbF 1000 1000 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 8.0V 6.0V 5.0V 4.5V 4.3V 4.0V 3.8V 100 10 ≤60μs PULSE WIDTH Tj = 25°C 1 BOTTOM 10 3.8V ≤60μs PULSE WIDTH Tj = 150°C 3.8V 1 0.1 0.1 1 10 0.1 100 Fig 1. Typical Output Characteristics 100 1.8 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 10 Fig 2. Typical Output Characteristics 1000 100 T J = 150°C 10 TJ = 25°C 1 VDS = 15V ≤60μs PULSE WIDTH 0.1 ID = 50A VGS = 10V 1.6 1.4 1.2 1.0 0.8 0.6 2 3 4 5 6 7 -60 -40 -20 0 Fig 3. Typical Transfer Characteristics 100000 Fig 4. Normalized On-Resistance vs. Temperature 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 50A C oss = C ds + C gd 10000 Ciss Coss Crss 1000 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 1 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) 100 12.0 VDS= 32V VDS= 20V 10.0 8.0 6.0 4.0 2.0 0.0 0.1 1 10 100 0 VDS, Drain-to-Source Voltage (V) www.irf.com © 2015 International Rectifier 10 20 30 40 50 60 70 80 90 100 QG, Total Gate Charge (nC) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage 3 VGS 10V 8.0V 6.0V 5.0V 4.5V 4.3V 4.0V 3.8V Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage Submit Datasheet Feedback May 19, 2015 IRFH5004PbF 10000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 T J = 150°C 100 T J = 25°C 10 1 VGS = 0V 0.4 0.6 0.8 1msec 100 10msec 10 1 DC Tc = 25°C Tj = 150°C Single Pulse 1.0 0.1 1.2 1 10 100 VDS, Drain-to-Source Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 200 4.5 VGS(th) , Gate threshold Voltage (V) Limited By Package ID, Drain Current (A) 100μsec 0.1 0.1 0.2 OPERATION IN THIS AREA LIMITED BY R DS(on) 1000 150 100 50 0 4.0 3.5 3.0 2.5 2.0 ID = 150μA ID = 500μA ID = 1.0mA ID = 1.0A 1.5 25 50 75 100 125 150 -75 -50 -25 T C , Case Temperature (°C) 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 10. Threshold Voltage vs. Temperature Fig 9. Maximum Drain Current vs. Case Temperature Thermal Response ( Z thJC ) °C/W 10 1 0.1 D = 0.50 0.20 0.10 0.05 0.01 0.02 0.01 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 0.0001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Mounting Base 4 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015 IRFH5004PbF RDS(on), Drain-to -Source On Resistance (m Ω) 6 1400 EAS , Single Pulse Avalanche Energy (mJ) ID = 50A ID 11A 17A BOTTOM 50A 1200 5 TOP 1000 4 T J = 125°C 3 2 T J = 25°C 1 800 600 400 200 0 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) VGS, Gate -to -Source Voltage (V) Fig 13. Maximum Avalanche Energy vs. Drain Current Fig 12. On-Resistance vs. Gate Voltage Avalanche Current (A) 1000 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Δ Tj = 125°C and Tstart =25°C (Single Pulse) 100 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔΤ j = 25°C and Tstart = 125°C. 1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Typical Avalanche Current vs. Pulsewidth 5 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015 IRFH5004PbF D.U.T Driver Gate Drive + - - * D.U.T. ISD Waveform Reverse Recovery Current + RG • dv/dt controlled by R G • Driver same type as D.U.T. • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - D= Period P.W. + V DD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS tp 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V A I AS 0.01Ω tp Fig 16b. Unclamped Inductive Waveforms Fig 16a. Unclamped Inductive Test Circuit V GS VDS RD V DS 90% D.U.T. RG + -V DD 10% VGS V10V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 td(on) tr td(off) tf Fig 17b. Switching Time Waveforms Fig 17a. Switching Time Test Circuit Id Vds Vgs L DUT 0 1K VCC Vgs(th) S Qgs1 Qgs2 Fig 18a. Gate Charge Test Circuit 6 www.irf.com © 2015 International Rectifier Qgd Qgodr Fig 18b. Gate Charge Waveform Submit Datasheet Feedback May 19, 2015 IRFH5004PbF PQFN 5x6 Outline "B" Package Details PQFN 5x6 Outline "G" Package Details For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 7 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015 IRFH5004PbF PQFN 5x6 Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE XXXX XYWWX XXXXX ASSEMBLY SITE CODE (Per SCOP 200-002) PIN 1 IDENTIFIER PART NUMBER MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) PQFN 5x6 Tape and Reel REEL DIMENSIONS TAPE DIMENSIONS CODE Ao Bo Ko W P1 DES CRIPTION Dimens ion des ign to accommodate the component width Dimens ion des ign to accommodate the component lenght Dimens ion des ign to accommodate the component thicknes s Overall width of the carrier tape Pitch between s ucces s ive cavity centers QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE Note: All dimens ion are nominal Package T ype Reel Diameter (Inch) QTY Reel Width W1 (mm) Ao (mm) Bo (mm) Ko (mm) P1 (mm) W (mm) Pin 1 Quadrant 5 X 6 PQFN 13 4000 12.4 6.300 5.300 1.20 8.00 12 Q1 Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015 IRFH5004PbF Qualification information† Indus trial Qualification level (per JE DE C JE S D47F Moisture Sensitivity Level RoHS compliant PQFN 5mm x 6mm †† ††† guidelines ) MS L1 ††† (per JE DE C J-S T D-020D ) Yes Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.27mH, RG = 50Ω, IAS = 50A. Pulse width ≤ 400μs; duty cycle ≤ 2%. Rθ is measured at TJ of approximately 90°C. When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by production test capability. Revision History Date 1/13/2014 4/28/2015 5/19/2015 Comment • Updated ordering information to reflect the End-of-Life (EOL) of the mini-reel option (EOL notice #259). • Updated data sheet with the new IR corporate template. • Updated package outline for “option B” and added package outline for “option G” on page 7. • Updated tape and reel on page 8. • Updated package outline for “option G” on page 7. • Updated "IFX logo" on page 1 and page 9. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 9 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015