NCP1339CGEVB User's Manual

NCP1339GEVB
Product Preview
A 45 W Adaptor with
NCP1339 Quasi-Resonant
Controller Evaluation Board
User'sManual
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EVAL BOARD USER’S MANUAL
Introduction
maximum output current regardless of the input voltage, a
latching−off over voltage protection through a dedicated
pin.
This application note focuses on the experimental results
of a 45 W adaptor driven by the NCP1339.
The NCP1339 is a highly integrated quasi−resonant
flyback controller capable of controlling rugged and
high−performance off−line power supplies as required by
adapter applications. With an integrated active X−cap
discharge feature and power savings mode, the NCP1339
can enable no−load power consumption below 10 mW for
65 W notebook adapters.
The quasi−resonant current−mode flyback stage features
a proprietary valley−lockout circuitry, ensuring stable valley
switching. This system works down to the 6th valley and
toggles to a frequency foldback mode to eliminate switching
losses. When the loop tends to force below 25 kHz
frequencies, the NCP1339 skips cycles to contain the power
delivery.
To help build rugged converters, the controller features
several key protective features: an internal brown−out, a
non−dissipative Over Power Protection for a constant
Table 1. EVALUATION BOARD SPECIFICATION
Parameter
Value
Minimum input voltage
85 V rms
Maximum input voltage
265 V rms
Output voltage
19 V
Nominal output power
45 W
Description of the Board
The 45 W adapter has been designed using the method
described in the application note AND9176/D and also
Mathcad file.
This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. P0
1
Publication Order Number:
EVBUM2248/D
+
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Figure 1. Evaluation Board Schematic
C2
330nF
J1
−
IC2
KBU4K
C4
120u
85−265 V rms
F1
2A / 250V
L1
10m
L2
10mH / 2A
C3
220nF
IN
D3
MMSD4148
D2
MRA4007
D1
MRA4007
C6
1n
C5
1n
R12
1.5k
C7
2.2n
R9
10M
D4
MMSD4148
R8
4.7M
R7
4.7M
R6
5.6M
C14
220p
R11
300k
C9
1n
C8
22p
R10
20k
R4
2.7k
R13
NTC
IC6x
OptoBase
C29
10n
R54
8.2M
IC4x
OptoBase
R53
2.2M
R5
2.7k
R14
1k
12
C10
220p
8
7
C13
1n
9
10
6
5
11
3
4
13
14
IC1
NCP1339C
2
1
D5
18V
ON Semiconductor
C15
100n
C28
22u
R52
0R
C11
1.5n
R3
10
NCP1339 Evaluation Board 19 V / 45 W
R15
10
D10
BAV21
R1
18k
Q1
BC857
D9
MMSD4148
C12
100u
D6
1N4937
D7
1N4937
R2
18k
R16
47k
.
C1
2.2nF
.
R17
0.47
R18
0.62
IC4
OptoDiode
SFH6156−2
35V
35V
C16
100p
C20
680uF
C18
220p
C19
680uF
D12
MBR20H150
TO−220
R20
47
IPA60R385
M1
T1
.
Gnd
C27
47n
R29
10k
R27
0
Gnd
R22
10k
IC5
NCP431
R21
1k
35V
C21
100uF
L3
2.2u
Gnd
R25
39k
R23
27k
R42
0R
IC6
OptoDiode
SFH6156−2
R40
1k
J3
PSM
Gnd
19 V / 2.4 A
Vout
NCP1339GEVB
BOARD SCHEMATIC
NCP1339GEVB
Figure 2. Evaluation Board Picture (Top View)
Figure 3. Evaluation Board Picture (Bottom View)
Efficiency Results
Table 2. EFFICIENCY @ 115 V RMS AND 230 V RMS
All measurements have been done after a 30 min burn−out
phase at full load and an additional 10 min at the load under
consideration.
The input power was measured with the power meter
66202 from Chroma.
The output voltage and output current were measured
using digital multimeter embedded on dc electronic load
66103 from Chroma.
Input
voltage
Pout (%)
Pout (W)
Pin (W)
Efficiency
(%)
115 V rms
100
45.11
51.22
88.08
75
33.88
38.51
88.00
50
22.62
25.77
87.77
25
11.38
13.14
86.63
Average
−
−
87.62
No load
−
42 m
−
100
45.13
50.87
88.71
75
33.89
38.41
88.22
50
22.61
25.93
87.19
230 V rms
25
11.39
13.43
84.80
Average
−
−
87.23
No load
−
36 m
−
The average efficiency was calculated from the efficiency
measurements at 25%, 50%, 75% and 100% of the nominal
output power.
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NCP1339GEVB
Efficiency (%)
89.0
88.0
87.0
86.0
85.0
230 V rms
84.0
115 V rms
83.0
82.0
0
20
40
60
80
100
Figure 4. Efficiency (%) vs. Output Power (% of max) at 115 V rms and 230 V rms
TYPICAL WAVEFORMS
Valley Lockout
The following scope shoots show the operating valley as
the load decreases for an input voltage of 115 Vrms.
The valley lockout technique makes controller changes
valley (from the 1st to the 6th valley) as the load decreases
without any valley jumping. This allows extending the
quasi−resonance (QR) operation range.
Figure 5. QR (1st Valley) Operation @ 45 W / 115 V rms
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NCP1339GEVB
Figure 6. 2nd Valley Operation @ 35 W / 115 V rms
Figure 7. 3rd Valley Operation @ 25 W / 115 V rms
Figure 8. 4th Valley Operation @ 20 W / 115 V rms
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NCP1339GEVB
Figure 9. 5th Valley Operation @ 15 W / 115 V rms
Figure 10. 6th Valley Operation @ 10 W / 115 V rms
Frequency Foldback Mode
switching frequency (fsw reduces if the power demand
diminishes).
In this 45 W evaluation boards, at 115 V rms, the
switching frequency is around 48.5 kHz @ 7 W and falls to
27.6 kHz for an output power of 4 W.
If while operating at valley 6, the load further decreases,
the NCP1339 will operate in Frequency Foldback (FF)
mode. Practically, the circuit enters in FF mode when FB
voltage drops below 0.8 V. The current is frozen to 25% of
its maximum value and regulation is made by varying the
Figure 11. FF Mode @ 7 W / 115 V rms
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NCP1339GEVB
Figure 12. FF Mode @ 4 W / 115 V rms
25 kHz Frequency Clamp and Skip Mode
typically), the power delivery cannot be continuously
controlled down to zero. Instead, the circuit stops pulsing
when the FB voltage drops below 400 mV and recovers
operation when VFB exceeds 450 mV (50−mV hysteresis).
Figure 13 shows controller operation in this skip mode.
The circuit prevents the switching frequency from
dropping below 25 kHz in order to avoid acoustic noise.
When the switching cycle is longer than 40 ms, the circuit
forces a new switching cycle. Since the NCP1339 forces a
minimum peak current and a minimum frequency (25 kHz
vFB(t)
400 mV
vDRAIN(t)
Figure 13. Skip Cycle Mode in Light Load (1 W @ 115 V rms)
Power Savings Mode (PSM)
defined by C28, R53 and R54. REM pin voltage slowly
decreasing and it drops below 1.5 V, the controller
automatically restarts to charge up C28 above 8 V through
auxiliary winding and enters in new off sequence (4 min 30 s
in our example Figure 14).
When the REM is actively pulled down via a dedicated
optocoupler, the adapter immediately re−starts as described
in Figure 15.
If application requires ultra−low input power
consumption in stand−by, NCP1339 controller embedded a
dedicated input, through REM pin, to reduce the
consumption to few mW. The controller enters in PSM mode
as soon as the RME pin is pulled up above a certain level. At
this time, the controller enters in sleep mode and output
voltage is not regulated anymore. The off time duration is
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NCP1339GEVB
vOUT(t)
4.5-min self relaxation
vREM(t)
vDRV(t)
Figure 14. Power Savings Mode
4.5-min self relaxation
vOUT(t)
REM pin is actively
grounded by
secondary side
through dedicated
optocoupler (IC6)
vREM(t)
vDRV(t)
Figure 15. PSM − Wake up with Secondary Side Signal through Dedicated Optocoupler
Brown−out protection
rising, 93 V falling, typically). Figure 16 shows typically
signals during line dropout test.
The NCP1339 controller embedded the Brown−out (BO)
function via HV pin. The BO thresholds are fixed (101 V line
vOUT(t)
vDRV(t)
vCC(t)
vHV(t)
Figure 16. Line Drop−out Test
X2 discharge
its terminals below a sufficient pace when you unplug the
power cord so that the available level becomes benign for a
user touching the plug after 1 s. This is the reason why
discharge resistors are connected in parallel with the
filtering capacitor.
All PSU need input filter to reduce EMI emission. X2
capacitor helps in this task but when you unplug the adaptor,
the voltage on ac terminals can stays to the input peak
voltage. IEC−950 standard impose to reduce the voltage on
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NCP1339GEVB
In order to save the power dissipation in the X2 capacitor
discharge resistance and so increase the general board
efficiency, X2 discharge function is directly implemented on
the controller. A dedicated X2 pin senses the input voltage
to detect when the mains disappears, typically when the PSU
is un−plugged.
vDRV(t)
vCC(t)
vX2(t)
vHV(t)
Figure 17. X2 Capacitor Discharge Function
The step load response is ±220 mV or ±1.2% of the output
voltage.
Transient load
Figure 18 and Figure 19 show an output transient load step
from 10% to 100% of the maximum output power at low line
and high line. The slew rate is 1 A/ms and the frequency is
20 Hz.
iOUT(t)
(1A/div)
vOUT(t) - AC coupled
(200mV/div)
Figure 18. Step Load Response between 10% to 100% @ 115 V rms
iOUT(t)
(1A/div)
vOUT(t) - AC coupled
(100mV/div)
Figure 19. Step Load Response between 10% to 100% @ 230 V rms
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NCP1339GEVB
Table 3. BILL OF MATERIAL (BOM)
Designator
Qty
Description
Value
Tolerance
Manufacturer
C1
1
Y1 capacitor, 250 V
2.2 nF
250 V
CERAMITE
C2
1
X2 capacitor, 305 V
330 nF
305 V
EPCOS
C3
1
X2 capacitor, 305 V
220 nF
305 V
EPCOS
C4
1
Electrolytic capacitor, 400 V
120 mF
400 V
RUBYCON
C5, C6, C9,
C13
4
Ceramic Capacitor, SMD, 50 V
1 nF
10%, 50 V
Standard
C7
1
Ceramic capacitor, SMD, 50 V
2.2 nF
10%, 50 V
Standard
C8
1
Ceramic capacitor, SMD, 50 V
22 pF
10%, 50 V
Standard
C10, C14,
C18
3
Ceramic Capacitor, SMD, 50 V
220 pF
10%, 50 V
Standard
C11
1
Ceramic Capacitor, Axial, 1000V
1.5 nF
10%, 1000 V
VISHAY
C12, C21
2
Electrolytic capacitor, 35 V
220 mF
20%, 35 V
Standard
C15
1
Ceramic capacitor, SMD, 50 V
100 nF
10%, 50 V
Standard
C16
1
Ceramic Capacitor, Axial, 1000V
100 pF
10%, 1000 V
MURATA
C19, C20
2
Electrolytic capacitor, 35 V
680 mF
35 V, 2.4 A
RUBYCON
C27
1
Ceramic capacitor, SMD, 50 V
47 nF
10%, 50 V
Standard
C28
1
Electrolytic capacitor, 35 V
22 mF
20%, 35 V
Standard
C29
1
Ceramic capacitor, SMD, 50 V
10 nF
10%, 50 V
Standard
D1, D2
2
Diode, Axial, 1A, 1000V
MRA4007
1 A, 1000 V,
SMA
ON Semiconductor
D3, D4, D9
3
Diode, SMD, 100 V
D1N4148
100 V
Standard
D5
1
18 V Zener Diode, Axial
zener
18 V, DO−35
Standard
D6, D7
2
Fast Recovery Diode, Axial, 1 A, 600 V
D1N4937
1 A, 600 V,
DO−35
ON Semiconductor
D10
1
Diode, Axial, 200 mA, 250V
BAV21
200 mA,
250 V, DO−35
Standard
D12
1
Schottky Diode, TO−220, 20 A, 150 V
MBR20H150
20 A, 150 V,
TO−220
ON Semiconductor
HS1, HS2
2
Heatsink, 13°C/W, For M1 & D12
13°C/W
AAVID THERMALLOY
HSC1, HSC2
2
Heatsink clip for TO−220, For M1 & D12
AAVID THERMALLOY
IC1
1
QR controller
ON Semiconductor
IC2
1
Diode Bridge, 4 A, 800 V
KBU4K
IC4, IC6
2
Optocoupler SFH6156−2, SMD
SFH6156−2
VISHAY
IC5
1
Shunt Regulator, 2.5 − 36 V, 1 − 100 mA
NCP431
ON Semiconductor
F1
1
Fuse, 2 A, 250 V
2 A, 250 V
SCHURTER
J1
1
Input Connector, 2.5 A, 260 V
2.5 A, 260 V
MULTICOMP
J2
1
Output Connector
10 A, 300 V
WEIDMULLER
J3
1
Test point
L1
1
Differential Mode Choke, 300 mH, 2A
300uH
2A
WURTH
L2
1
Common Mode Choke, 2*10 mH, 2 A
10mH
2A
WURTH
L3
1
Radial Coil, 2.2 mH, 6 A, 20%
2.2uH
6 A, 20%
WURTH
M1
1
MOSFET, 600 V, 7 A
IPP60R385
7 A, 600 V
INFINEON
Q1
1
PNP transistor, SMD
BC857
R1, R2
2
Resistor, Axial, 3 W, 5%
18 kW
MULTICOMP
Keystone
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ON Semiconductor
3 W, 5%
Standard
NCP1339GEVB
Table 3. BILL OF MATERIAL (BOM)
Designator
Qty
Description
Value
Tolerance
Manufacturer
R3
1
Resistor, Axial, 1 W, 1%
10 W
1%
Standard
R4, R5
2
Ceramic Resistor, SMD, 0.25 W, 50 V
2.7 kW
5%
Standard
R6
1
Ceramic Resistor, SMD, 0.25 W, 50 V
5.6 MW
5%
Standard
R7, R8
2
Ceramic Resistor, SMD, 0.25 W, 50 V
4.7 MW
5%
Standard
R9
1
Ceramic Resistor, SMD, 0.25 W, 50 V
10 MW
5%
Standard
R10
1
Ceramic Resistor, SMD, 0.25 W, 50 V
20 kW
5%
Standard
R11
1
Ceramic Resistor, SMD, 0.25 W, 50 V
300 kW
5%
Standard
R12
1
Ceramic Resistor, SMD, 0.25 W, 50 V
1.5 kW
5%
Standard
R13
1
NTC, 100 kW at 25°C, Beta = 4190
100 kW @
25°C
0.05
VISHAY
R14, R21,
R40
3
Ceramic Resistor, SMD, 0.25 W, 50 V
1 kW
5%
Standard
R15
1
Ceramic Resistor, SMD, 0.25 W, 50 V
10 W
5%
Standard
R16
1
Ceramic Resistor, SMD, 0.25 W, 50 V
47 kW
5%
Standard
R17
1
Ceramic Resistor, SMD, 1 W, 1%, 50 V
0.47 W
1 W, 1%
Standard
R18
1
Ceramic Resistor, SMD, 1 W, 1%, 50 V
0.62 W
1 W, 1%
Standard
R20
1
Ceramic Resistor, SMD, 0.25 W, 50 V
47 W
5%
Standard
R22, R29
2
Ceramic Resistor, SMD, 0.25 W, 50 V
10 kW
5%
Standard
R23
1
Ceramic Resistor, SMD, 0.25 W, 50 V
27 kW
5%
Standard
R25
1
Ceramic Resistor, SMD, 0.25 W, 50 V
39 kW
5%
Standard
R27, R42,
R52
3
Ceramic Resistor, SMD, 0.25 W, 50 V
0W
5%
Standard
R53
1
Ceramic Resistor, SMD, 0.25 W, 50 V
2.2 MW
5%
Standard
R54
1
Ceramic Resistor, SMD, 0.25 W, 50 V
8.2 MW
5%
Standard
T1
1
QR Transformer
17212
Conclusion
CME
Thanks to the high voltage current source and X2
capacitor discharge embedded on controller, stand−by
power consumption was measured below 45 mW. This
stand−by consumption can be further reduced by activating
power savings mode.
This application note has described the results obtained
for 45 W Quasi−resonant flyback topology with NCP1339
controller.
Due to the valley lockout, the NCP1339 allows building
QR adapter without valley jumping.
The controller offers all necessary protections needed to
safe power supply.
ON Semiconductor and the
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specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
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