NCP1339GEVB Product Preview A 45 W Adaptor with NCP1339 Quasi-Resonant Controller Evaluation Board User'sManual http://onsemi.com EVAL BOARD USER’S MANUAL Introduction maximum output current regardless of the input voltage, a latching−off over voltage protection through a dedicated pin. This application note focuses on the experimental results of a 45 W adaptor driven by the NCP1339. The NCP1339 is a highly integrated quasi−resonant flyback controller capable of controlling rugged and high−performance off−line power supplies as required by adapter applications. With an integrated active X−cap discharge feature and power savings mode, the NCP1339 can enable no−load power consumption below 10 mW for 65 W notebook adapters. The quasi−resonant current−mode flyback stage features a proprietary valley−lockout circuitry, ensuring stable valley switching. This system works down to the 6th valley and toggles to a frequency foldback mode to eliminate switching losses. When the loop tends to force below 25 kHz frequencies, the NCP1339 skips cycles to contain the power delivery. To help build rugged converters, the controller features several key protective features: an internal brown−out, a non−dissipative Over Power Protection for a constant Table 1. EVALUATION BOARD SPECIFICATION Parameter Value Minimum input voltage 85 V rms Maximum input voltage 265 V rms Output voltage 19 V Nominal output power 45 W Description of the Board The 45 W adapter has been designed using the method described in the application note AND9176/D and also Mathcad file. This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. © Semiconductor Components Industries, LLC, 2014 July, 2014 − Rev. P0 1 Publication Order Number: EVBUM2248/D + http://onsemi.com 2 Figure 1. Evaluation Board Schematic C2 330nF J1 − IC2 KBU4K C4 120u 85−265 V rms F1 2A / 250V L1 10m L2 10mH / 2A C3 220nF IN D3 MMSD4148 D2 MRA4007 D1 MRA4007 C6 1n C5 1n R12 1.5k C7 2.2n R9 10M D4 MMSD4148 R8 4.7M R7 4.7M R6 5.6M C14 220p R11 300k C9 1n C8 22p R10 20k R4 2.7k R13 NTC IC6x OptoBase C29 10n R54 8.2M IC4x OptoBase R53 2.2M R5 2.7k R14 1k 12 C10 220p 8 7 C13 1n 9 10 6 5 11 3 4 13 14 IC1 NCP1339C 2 1 D5 18V ON Semiconductor C15 100n C28 22u R52 0R C11 1.5n R3 10 NCP1339 Evaluation Board 19 V / 45 W R15 10 D10 BAV21 R1 18k Q1 BC857 D9 MMSD4148 C12 100u D6 1N4937 D7 1N4937 R2 18k R16 47k . C1 2.2nF . R17 0.47 R18 0.62 IC4 OptoDiode SFH6156−2 35V 35V C16 100p C20 680uF C18 220p C19 680uF D12 MBR20H150 TO−220 R20 47 IPA60R385 M1 T1 . Gnd C27 47n R29 10k R27 0 Gnd R22 10k IC5 NCP431 R21 1k 35V C21 100uF L3 2.2u Gnd R25 39k R23 27k R42 0R IC6 OptoDiode SFH6156−2 R40 1k J3 PSM Gnd 19 V / 2.4 A Vout NCP1339GEVB BOARD SCHEMATIC NCP1339GEVB Figure 2. Evaluation Board Picture (Top View) Figure 3. Evaluation Board Picture (Bottom View) Efficiency Results Table 2. EFFICIENCY @ 115 V RMS AND 230 V RMS All measurements have been done after a 30 min burn−out phase at full load and an additional 10 min at the load under consideration. The input power was measured with the power meter 66202 from Chroma. The output voltage and output current were measured using digital multimeter embedded on dc electronic load 66103 from Chroma. Input voltage Pout (%) Pout (W) Pin (W) Efficiency (%) 115 V rms 100 45.11 51.22 88.08 75 33.88 38.51 88.00 50 22.62 25.77 87.77 25 11.38 13.14 86.63 Average − − 87.62 No load − 42 m − 100 45.13 50.87 88.71 75 33.89 38.41 88.22 50 22.61 25.93 87.19 230 V rms 25 11.39 13.43 84.80 Average − − 87.23 No load − 36 m − The average efficiency was calculated from the efficiency measurements at 25%, 50%, 75% and 100% of the nominal output power. http://onsemi.com 3 NCP1339GEVB Efficiency (%) 89.0 88.0 87.0 86.0 85.0 230 V rms 84.0 115 V rms 83.0 82.0 0 20 40 60 80 100 Figure 4. Efficiency (%) vs. Output Power (% of max) at 115 V rms and 230 V rms TYPICAL WAVEFORMS Valley Lockout The following scope shoots show the operating valley as the load decreases for an input voltage of 115 Vrms. The valley lockout technique makes controller changes valley (from the 1st to the 6th valley) as the load decreases without any valley jumping. This allows extending the quasi−resonance (QR) operation range. Figure 5. QR (1st Valley) Operation @ 45 W / 115 V rms http://onsemi.com 4 NCP1339GEVB Figure 6. 2nd Valley Operation @ 35 W / 115 V rms Figure 7. 3rd Valley Operation @ 25 W / 115 V rms Figure 8. 4th Valley Operation @ 20 W / 115 V rms http://onsemi.com 5 NCP1339GEVB Figure 9. 5th Valley Operation @ 15 W / 115 V rms Figure 10. 6th Valley Operation @ 10 W / 115 V rms Frequency Foldback Mode switching frequency (fsw reduces if the power demand diminishes). In this 45 W evaluation boards, at 115 V rms, the switching frequency is around 48.5 kHz @ 7 W and falls to 27.6 kHz for an output power of 4 W. If while operating at valley 6, the load further decreases, the NCP1339 will operate in Frequency Foldback (FF) mode. Practically, the circuit enters in FF mode when FB voltage drops below 0.8 V. The current is frozen to 25% of its maximum value and regulation is made by varying the Figure 11. FF Mode @ 7 W / 115 V rms http://onsemi.com 6 NCP1339GEVB Figure 12. FF Mode @ 4 W / 115 V rms 25 kHz Frequency Clamp and Skip Mode typically), the power delivery cannot be continuously controlled down to zero. Instead, the circuit stops pulsing when the FB voltage drops below 400 mV and recovers operation when VFB exceeds 450 mV (50−mV hysteresis). Figure 13 shows controller operation in this skip mode. The circuit prevents the switching frequency from dropping below 25 kHz in order to avoid acoustic noise. When the switching cycle is longer than 40 ms, the circuit forces a new switching cycle. Since the NCP1339 forces a minimum peak current and a minimum frequency (25 kHz vFB(t) 400 mV vDRAIN(t) Figure 13. Skip Cycle Mode in Light Load (1 W @ 115 V rms) Power Savings Mode (PSM) defined by C28, R53 and R54. REM pin voltage slowly decreasing and it drops below 1.5 V, the controller automatically restarts to charge up C28 above 8 V through auxiliary winding and enters in new off sequence (4 min 30 s in our example Figure 14). When the REM is actively pulled down via a dedicated optocoupler, the adapter immediately re−starts as described in Figure 15. If application requires ultra−low input power consumption in stand−by, NCP1339 controller embedded a dedicated input, through REM pin, to reduce the consumption to few mW. The controller enters in PSM mode as soon as the RME pin is pulled up above a certain level. At this time, the controller enters in sleep mode and output voltage is not regulated anymore. The off time duration is http://onsemi.com 7 NCP1339GEVB vOUT(t) 4.5-min self relaxation vREM(t) vDRV(t) Figure 14. Power Savings Mode 4.5-min self relaxation vOUT(t) REM pin is actively grounded by secondary side through dedicated optocoupler (IC6) vREM(t) vDRV(t) Figure 15. PSM − Wake up with Secondary Side Signal through Dedicated Optocoupler Brown−out protection rising, 93 V falling, typically). Figure 16 shows typically signals during line dropout test. The NCP1339 controller embedded the Brown−out (BO) function via HV pin. The BO thresholds are fixed (101 V line vOUT(t) vDRV(t) vCC(t) vHV(t) Figure 16. Line Drop−out Test X2 discharge its terminals below a sufficient pace when you unplug the power cord so that the available level becomes benign for a user touching the plug after 1 s. This is the reason why discharge resistors are connected in parallel with the filtering capacitor. All PSU need input filter to reduce EMI emission. X2 capacitor helps in this task but when you unplug the adaptor, the voltage on ac terminals can stays to the input peak voltage. IEC−950 standard impose to reduce the voltage on http://onsemi.com 8 NCP1339GEVB In order to save the power dissipation in the X2 capacitor discharge resistance and so increase the general board efficiency, X2 discharge function is directly implemented on the controller. A dedicated X2 pin senses the input voltage to detect when the mains disappears, typically when the PSU is un−plugged. vDRV(t) vCC(t) vX2(t) vHV(t) Figure 17. X2 Capacitor Discharge Function The step load response is ±220 mV or ±1.2% of the output voltage. Transient load Figure 18 and Figure 19 show an output transient load step from 10% to 100% of the maximum output power at low line and high line. The slew rate is 1 A/ms and the frequency is 20 Hz. iOUT(t) (1A/div) vOUT(t) - AC coupled (200mV/div) Figure 18. Step Load Response between 10% to 100% @ 115 V rms iOUT(t) (1A/div) vOUT(t) - AC coupled (100mV/div) Figure 19. Step Load Response between 10% to 100% @ 230 V rms http://onsemi.com 9 NCP1339GEVB Table 3. BILL OF MATERIAL (BOM) Designator Qty Description Value Tolerance Manufacturer C1 1 Y1 capacitor, 250 V 2.2 nF 250 V CERAMITE C2 1 X2 capacitor, 305 V 330 nF 305 V EPCOS C3 1 X2 capacitor, 305 V 220 nF 305 V EPCOS C4 1 Electrolytic capacitor, 400 V 120 mF 400 V RUBYCON C5, C6, C9, C13 4 Ceramic Capacitor, SMD, 50 V 1 nF 10%, 50 V Standard C7 1 Ceramic capacitor, SMD, 50 V 2.2 nF 10%, 50 V Standard C8 1 Ceramic capacitor, SMD, 50 V 22 pF 10%, 50 V Standard C10, C14, C18 3 Ceramic Capacitor, SMD, 50 V 220 pF 10%, 50 V Standard C11 1 Ceramic Capacitor, Axial, 1000V 1.5 nF 10%, 1000 V VISHAY C12, C21 2 Electrolytic capacitor, 35 V 220 mF 20%, 35 V Standard C15 1 Ceramic capacitor, SMD, 50 V 100 nF 10%, 50 V Standard C16 1 Ceramic Capacitor, Axial, 1000V 100 pF 10%, 1000 V MURATA C19, C20 2 Electrolytic capacitor, 35 V 680 mF 35 V, 2.4 A RUBYCON C27 1 Ceramic capacitor, SMD, 50 V 47 nF 10%, 50 V Standard C28 1 Electrolytic capacitor, 35 V 22 mF 20%, 35 V Standard C29 1 Ceramic capacitor, SMD, 50 V 10 nF 10%, 50 V Standard D1, D2 2 Diode, Axial, 1A, 1000V MRA4007 1 A, 1000 V, SMA ON Semiconductor D3, D4, D9 3 Diode, SMD, 100 V D1N4148 100 V Standard D5 1 18 V Zener Diode, Axial zener 18 V, DO−35 Standard D6, D7 2 Fast Recovery Diode, Axial, 1 A, 600 V D1N4937 1 A, 600 V, DO−35 ON Semiconductor D10 1 Diode, Axial, 200 mA, 250V BAV21 200 mA, 250 V, DO−35 Standard D12 1 Schottky Diode, TO−220, 20 A, 150 V MBR20H150 20 A, 150 V, TO−220 ON Semiconductor HS1, HS2 2 Heatsink, 13°C/W, For M1 & D12 13°C/W AAVID THERMALLOY HSC1, HSC2 2 Heatsink clip for TO−220, For M1 & D12 AAVID THERMALLOY IC1 1 QR controller ON Semiconductor IC2 1 Diode Bridge, 4 A, 800 V KBU4K IC4, IC6 2 Optocoupler SFH6156−2, SMD SFH6156−2 VISHAY IC5 1 Shunt Regulator, 2.5 − 36 V, 1 − 100 mA NCP431 ON Semiconductor F1 1 Fuse, 2 A, 250 V 2 A, 250 V SCHURTER J1 1 Input Connector, 2.5 A, 260 V 2.5 A, 260 V MULTICOMP J2 1 Output Connector 10 A, 300 V WEIDMULLER J3 1 Test point L1 1 Differential Mode Choke, 300 mH, 2A 300uH 2A WURTH L2 1 Common Mode Choke, 2*10 mH, 2 A 10mH 2A WURTH L3 1 Radial Coil, 2.2 mH, 6 A, 20% 2.2uH 6 A, 20% WURTH M1 1 MOSFET, 600 V, 7 A IPP60R385 7 A, 600 V INFINEON Q1 1 PNP transistor, SMD BC857 R1, R2 2 Resistor, Axial, 3 W, 5% 18 kW MULTICOMP Keystone http://onsemi.com 10 ON Semiconductor 3 W, 5% Standard NCP1339GEVB Table 3. BILL OF MATERIAL (BOM) Designator Qty Description Value Tolerance Manufacturer R3 1 Resistor, Axial, 1 W, 1% 10 W 1% Standard R4, R5 2 Ceramic Resistor, SMD, 0.25 W, 50 V 2.7 kW 5% Standard R6 1 Ceramic Resistor, SMD, 0.25 W, 50 V 5.6 MW 5% Standard R7, R8 2 Ceramic Resistor, SMD, 0.25 W, 50 V 4.7 MW 5% Standard R9 1 Ceramic Resistor, SMD, 0.25 W, 50 V 10 MW 5% Standard R10 1 Ceramic Resistor, SMD, 0.25 W, 50 V 20 kW 5% Standard R11 1 Ceramic Resistor, SMD, 0.25 W, 50 V 300 kW 5% Standard R12 1 Ceramic Resistor, SMD, 0.25 W, 50 V 1.5 kW 5% Standard R13 1 NTC, 100 kW at 25°C, Beta = 4190 100 kW @ 25°C 0.05 VISHAY R14, R21, R40 3 Ceramic Resistor, SMD, 0.25 W, 50 V 1 kW 5% Standard R15 1 Ceramic Resistor, SMD, 0.25 W, 50 V 10 W 5% Standard R16 1 Ceramic Resistor, SMD, 0.25 W, 50 V 47 kW 5% Standard R17 1 Ceramic Resistor, SMD, 1 W, 1%, 50 V 0.47 W 1 W, 1% Standard R18 1 Ceramic Resistor, SMD, 1 W, 1%, 50 V 0.62 W 1 W, 1% Standard R20 1 Ceramic Resistor, SMD, 0.25 W, 50 V 47 W 5% Standard R22, R29 2 Ceramic Resistor, SMD, 0.25 W, 50 V 10 kW 5% Standard R23 1 Ceramic Resistor, SMD, 0.25 W, 50 V 27 kW 5% Standard R25 1 Ceramic Resistor, SMD, 0.25 W, 50 V 39 kW 5% Standard R27, R42, R52 3 Ceramic Resistor, SMD, 0.25 W, 50 V 0W 5% Standard R53 1 Ceramic Resistor, SMD, 0.25 W, 50 V 2.2 MW 5% Standard R54 1 Ceramic Resistor, SMD, 0.25 W, 50 V 8.2 MW 5% Standard T1 1 QR Transformer 17212 Conclusion CME Thanks to the high voltage current source and X2 capacitor discharge embedded on controller, stand−by power consumption was measured below 45 mW. This stand−by consumption can be further reduced by activating power savings mode. This application note has described the results obtained for 45 W Quasi−resonant flyback topology with NCP1339 controller. Due to the valley lockout, the NCP1339 allows building QR adapter without valley jumping. The controller offers all necessary protections needed to safe power supply. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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