NCP1421/2 Reference Designs for High-Power White LED Flash Applications

AND8171/D
NCP1421/2 Reference
Designs for High−Power
White LED Flash
Applications
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Prepared by: Jim Hill
ON Semiconductor
APPLICATION NOTE
Abstract
profile, small sized inductor and output capacitor to be used.
Also an integrated disconnect switch provides “true cutoff”
by isolating the output from the battery during shutdown.
The NCP1421 comes in the 3x5 mm Micro−8 package, and
the NCP1422 comes in the 3x3 mm DFN package. Because
of these features the NCP1421/2 are well suited to provide
current regulation for biasing high current white LED’s in
portable flash applications. Figure 1 illustrates this circuit.
In summary the reference voltage is split between the
current sense resistor, R4, and a divided down voltage from
the white LED with resistors R2 and R3. This helps remove
some of the dependence of the NCP1421/2’s output voltage,
and thus current, on the LED’s forward voltage, VF. This
also helps prevent lot−to−lot VF variation affecting the LED
brightness.
Figure 1 shows a typical circuit which, with the Bill of
Materials shown in Table 1, can provide LED currents of 200,
600 and 800 mA. The 200 mA design uses the NCP1422
because of its smaller footprint, and the 600 mA and 800 mA
designs use the NCP1421 and NCP1422 respectively to
showcase the load current limits of each device.
The higher currents (600 and 800 mA) assume that the
LED will be pulsed and not run at steady state. 50 ms pulses
on the LBI/EN were used in the analysis of these circuits.
The NCP1421/2 takes 1.5 ms (nominal) to turn on after the
LBI/EN pin is driven high.
The attached design illustrates how the NCP1421/2 boost
converters can be configured as a current regulator for
biasing high current white LED’s. Typical boost converters,
such as these, have a reference voltage of 1.2 V. Since this
is a current sourcing application, the more straightforward
approach of directly sensing the boost converter’s reference
voltage (Vref), which is 1.2 V, across a sense resistor would
dissipate too much power at the currents required to drive
high−power White LED’s. Also, the lot−to−lot forward
voltage variation is too high to simply regulate at a fixed
voltage with a current limiting resistor. Therefore, this paper
describes a technique that reduces both the power loss in the
sense resistor and the lot−to−lot variation effect of the LED.
This applications shows two implementations of this
concept. Figure 1 shows a simple boost converter configured
at various current levels and uses the Lumileds LXHL−
WW06 white LED. Figure 5 shows a circuit that switches
between a low current for focus lighting and high current for
the flash and uses the Lumileds LXCL−PWF1 white LED.
Overview
The NCP1421 and NCP1422 are monolithic boost
converter IC’s uniquely suited to power higher current
portable applications (600 − 800 mA maximum). Their high
switching frequency (up to 1.2 MHz) allows for a low
C3
22 F
R2
NCP1422
D1
1 FB
VOUT 8
2 LBI/EN LX 7
R3
R1
100k
3 LBO
4 REF
L1
6.8 H
GND 6
BAT 5
C1
220 nF
U1
C2
22 F
VIN
R4
ON
OFF
50 ms Pulse
Figure 1. NCP1422 Configured to Drive High Current White LED
 Semiconductor Components Industries, LLC, 2004
November, 2004 − Rev. 0
1
Publication Order Number:
AND8171/D
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100
1000
95
800 mA
700
600 mA
600
500
400
300
200 mA
200
85
600 mA
80
800 mA
75
70
65
60
100
0
3.0
200 mA
90
800
EFFICIENCY (%)
OUTPUT CURRENT (mA)
900
55
VF = 3.5 V @ 600 mA
3.2
3.4
3.6
3.8
4.0
VF = 3.5 V @ 600 mA
50
3.0
4.2
3.2
3.4
3.6
3.8
4.0
4.2
INPUT VOLTAGE (V)
INPUT VOLTAGE (V)
Figure 2. Output Current vs. Input Voltage
Figure 3. Converter Efficiency vs. Input Voltage
100
95
EFFICIENCY (%)
90
85
200 mA
80
75
600 mA
70
65
60
800 mA
55
50
3.0
VF = 3.5 V @ 600 mA
3.2
3.4
3.6
3.8
4.0
4.2
INPUT VOLTAGE (V)
Figure 4. Electrical to Optical Efficiency vs. Input Voltage
Design Steps
input voltage is assumed to be 3.6 V and has been optimized
around this point.
Step 10: Determine output voltage. Output voltage will be
VF + VR4 = 4.1 V One can use the 3.6 V as Vin chosen above
because this circuit decreases LED current as VF increases
from the designed value. This is shown by the following
equation: ID = 1/R4*(Vref − VF*(R3/R2 + R3)) Conversely
it increases current as VF decreases from the designed value,
but then the difference between Vin and Vout is less, so the
peak current is reduced.
Step 11: Use the NCP1421 or NCP1422 datasheet to
determine the appropriate L1, C1, and C2. For this
application, 6.8 H, 22 F, and 22 F were found to work well
over the load and line range.
Step 12: Determine the inductor saturation current. For
this circuit Vin min = 3 V: ILavg = Iout / (1−D) where D =
(1−Vin/Vout). Therefore ILavg = 600 mA/(1−(1−Vin/Vout)) =
840 mA
Step 13: Add 20% margin to this ILavg and pick an
inductor with an Isat > 1.0 A.
The following steps show how to determine the critical
components for this circuit. (R2, R3, R4, L1) This shows the
600 mA version as an example:
Step 1: Let LED current = ID = 600 mA
Step 2: From the LED datasheet, let VF = 3.5 V
(Find value of VF at 600 mA).
Step 3: Let R3 = 100 k
Step 4: Let VR4 = 0.5 * Vref which is 0.6 V. This places
equal dependence on VF variation and tolerance of the
reference and R4. One could increase the output voltage by
making the voltage across R4 (VR4) larger or decrease
power dissipation in R4 by lowering VR4.
Step 5: For ID = 600 mA and VR4 = 0.6 V, R4 = 1.0 .
Step 6: Now, VR4 plus the divided voltage off of the LED
must equal 1.2 V, and that is 0.6 V
Step 7: So, R2 = (VF/(Vref − VR4)) * R3 − R3 =
(3.5/0.6) * 100 k − 100 k = 483 k
Step 8: Then choose a standard value of R2 which is close
to the above calculated value. Choose R2 = 475 k.
Step 9: Pick input voltage range. These circuits assume a
one−cell Li−ion battery pack or a 3−cell NiMH pack so the
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AND8171/D
Finally, Figure 5 shows a Focus/Flash application where
the NCP1422 drives one LED at 200 and 600 mA. An
C3
22 F
external MOSFET changes the R4 resistance to vary the
LED current. 50 ms pulses were used for this design.
R2
NCP1422
1 FB
VOUT 8
2 LBI/EN LX 7
D1
R3
3 LBO
4 REF
R1
100k
C1
220 nF
R4a
L1
6.8 H
GND 6
BAT 5
U1
Enable
Signal
Q1
ON
OFF
R4b
50 ms Pulse
Figure 5. 200/600 mA Focus/Flash Application
VIN = 3.6 V
Figure 6. LED Current and Vin Ripple Voltage with 200/600 mA Focus/Flash Pulse
(CH2 = Vin, ac−coupled @ 50 mV/div; CH4 = ILED @ 200 mA/div)
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C2
22 F
VIN
AND8171/D
Table 1. Bill of Materials for Figure 1
Ref
Part Number
Description
PCB Footprint
Manufacturer
200 mA Design
U1
NCP1422MNR2
NCP1422 Boost Converter
D1
LXHL−WW06
White LED
DFN−10 (3 x 3 mm)
ON Semiconductor
L1
VLP5610T−6R8
6.8 H Inductor
(5.6 x 5.0 x 1.0 mm)
TDK
R1
CRCW0402104….
100 k
0402
Vishay
R2
CRCW04025603….
560 k
0402
Vishay
R3
CRCW04021503….
150 k
0402
Vishay
R4
DCRCW12062R70...
2.7 1206
Vishay
C1
C1608X5R1A224K
220 nF
0603
TDK
C2
C2012X5R0J226M
22 F / 6.3 V (X5R Ceramic)
0805
TDK
C3
C2012X5R0J226M
22 F / 6.3 V (X5R Ceramic)
0805
TDK
Micro−8 (3 x 5 mm)
ON Semiconductor
Lumileds
600 mA Design
U1
NCP1421DMR2
NCP1421 Boost Converter
D1
LXHL−WW06
White LED
Lumileds
L1
VLP6214T−6R8
6.8 H Inductor
(6.2 x 5.8 x 1.4 mm)
TDK / Coilcraft
R1
CRCW0402104….
100 k
0402
Vishay
R2
CRCW04025603….
475 k
0402
Vishay
R3
CRCW04021503….
100 k
0402
Vishay
R4
CRCW12061R00...
1.0 1206
Vishay
C1
C1608X5R1A224K
220 nF
0603
TDK
C2
C2012X5R0J226M
22 F / 6.3 V (X5R Ceramic)
0805
TDK
C3
C2012X5R0J226M
22 F / 6.3 V (X5R Ceramic)
0805
TDK
DFN−10 (3 x 3 mm)
ON Semiconductor
800 mA Design
U1
NCP1422DMR2
NCP1422 Boost Converter
D1
LXHL−WW06
White LED
Lumileds
L1
VLP6214T−6R8
6.8 H Inductor
(6.2 x 5.8 x 1.4 mm)
TDK
R1
CRCW0402104….
100 k
0402
Vishay
R2
CRCW04025603….
750 k
0402
Vishay
R3
CRCW04021503….
150 k
0402
Vishay
R4
CRCW12061R50...*
0.75 1206
Vishay
C1
C1608X5R1A224K
220 nF
0603
TDK
C2
C2012X5R0J226M
22 F / 6.3 V (X5R Ceramic)
0805
TDK
C3
C2012X5R0J226M
22 F / 6.3 V (X5R Ceramic)
0805
TDK
*2 − 1.5 resistors were used in parallel.
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AND8171/D
Table 2. Bill of Materials for Figure 5
200/600 mA Design
U1
NCP1422MNR2
NCP1422 Boost Converter
DFN−10 (3 x 3 mm)
ON Semiconductor
D1
LXCL−PWF1
White LED
(1.64 x 2.04 x 0.9 mm)
Lumileds
Q1
NTJS3157N
N−Channel MOSFET
SC−88
ON Semiconductor
L1
VLP5610−6R8
6.8 H Inductor
(5.6 x 5.0 x 1.0 mm)
TDK
R1
CRCW0402104….
100 k
0402
Vishay
R2
CRCW04025603….
475 k
0402
Vishay
R3
CRCW04021503….
100 k
0402
Vishay
R4a
CRCW12062R00...*
1.0 1206
Vishay
R4b
CRCW12062R00...
2.0 1206
Vishay
C1
C1608X5R1A224K
220 nF
0603
TDK
C2
C2012X5R0J226M
22 F / 6.3 V (X5R Ceramic)
0805
TDK
C3
C2012X5R0J226M
22 F / 6.3 V (X5R Ceramic)
0805
TDK
*2 − 2.0 resistors were used in parallel.
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