VISHAY TSOP1233WI1

TSOP12..WI1
Vishay Semiconductors
IR Receiver Modules for Remote Control Systems
Description
The TSOP12..WI1 - series are miniaturized receivers
for infrared remote control systems. PIN diode and
preamplifier are assembled on lead frame, the epoxy
package is designed as IR filter.
The demodulated output signal can directly be
decoded by a microprocessor. TSOP12..WI1 is the
standard IR remote control receiver series, supporting all major transmission codes.
3
13643
Features
Special Features
• Photo detector and preamplifier in one
package
• Internal filter for PCM frequency
• Improved shielding against electrical
field disturbance
• TTL and CMOS compatibility
• Output active low
• Low power consumption
• Improved immunity against ambient light
• Suitable burst length ≥ 10 cycles/burst
e3
Parts Table
Part
Carrier Frequency
TSOP1230WI1
30 kHz
TSOP1233WI1
33 kHz
TSOP1236WI1
36 kHz
TSOP1237WI1
36.7 kHz
TSOP1238WI1
38 kHz
TSOP1240WI1
40 kHz
TSOP1256WI1
56 kHz
Block Diagram
Application Circuit
16832
2
16842
3
Input
AGC
Band
Pass
Demodulator
OUT
1
PIN
Control Circuit
GND
Transmitter TSOPxxxx
with
TSALxxxx
Circuit
30 kΩ
VS
R1 = 100 Ω
VS
OUT
GND
+VS
C1 =
4.7 µF
µC
VO
GND
R1 + C1 recommended to suppress power supply
disturbances.
The output voltage should not be hold continuously at
a voltage below VO = 3.3 V by the external circuit.
Document Number 82022
Rev. 1.7, 27-Jan-05
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1
TSOP12..WI1
VISHAY
Vishay Semiconductors
Absolute Maximum Ratings
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Symbol
Value
Supply Voltage
Parameter
(Pin 2)
Test condition
VS
- 0.3 to + 6.0
V
Supply Current
(Pin 2)
IS
5
mA
Output Voltage
(Pin 3)
VO
- 0.3 to + 6.0
V
Output Current
(Pin 3)
IO
5
mA
Junction Temperature
Unit
Tj
100
°C
Storage Temperature Range
Tstg
- 25 to + 85
°C
Operating Temperature Range
Tamb
- 25 to + 85
°C
Power Consumption
(Tamb ≤ 85 °C)
Ptot
50
mW
Soldering Temperature
t≤5s
Tsd
260
°C
Electrical and Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Supply Current (Pin 2)
Symbol
Min
Typ.
Max
Unit
VS = 5 V, Ev = 0
Test condition
ISD
0.8
1.2
1.5
mA
VS = 5 V, Ev = 40 klx, sunlight
ISH
Supply Voltage (Pin 2)
VS
Transmission Distance
Ev = 0, test signal see fig.1, IR
diode TSAL6200, IF = 400 mA
d
Output Voltage Low (Pin 3)
IOSL = 0.5 mA, Ee = 0.7 mW/m2,
f = fo, test signal see fig. 1
VOSL
Minimum Irradiance (30 - 40
kHz)
Pulse width tolerance: tpi - 5/fo <
tpo < tpi + 6/fo, test signal see
fig.1
Ee min
Minimum Irradiance (56 kHz)
Pulse width tolerance: tpi - 5/fo <
tpo < tpi + 6/fo, test signal see
fig.1
Ee min
Maximum Irradiance
tpi - 5/fo < tpo < tpi + 6/fo, test
signal see fig. 1
Ee max
Directivity
Angle of half transmission
distance
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2
ϕ1/2
1.5
4.5
mA
5.5
35
V
m
250
mV
0.35
0.5
mW/m2
0.4
0.6
mW/m2
30
W/m2
± 45
deg
Document Number 82022
Rev. 1.7, 27-Jan-05
TSOP12..WI1
VISHAY
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Optical Test Signal
(IR diode TSAL6200, IF = 0.4 A, 30 pulses, f = f0, T = 10 ms)
t
tpi *
T
* tpi w 10/fo is recommended for optimal function
VO
16110
Output Signal
1)
2)
VOH
7/f0 < td < 15/f0
tpi–5/f0 < tpo < tpi+6/f0
VOL
tpo2 )
td1 )
Ton ,Toff – Output Pulse Width ( ms )
Ee
t
1.0
0.9
0.8
0.6
0.5
0.3
0.1
0.0
0.1
1.0
10.0
100.0 1000.010000.0
Ee – Irradiance ( mW/m2 )
16909
Figure 4. Output Pulse Diagram
1.2
E e min / E e – Rel. Responsivity
Output Pulse
0.9
t po – Output Pulse Width ( ms )
l = 950 nm,
optical test signal, fig.3
0.2
1.0
0.8
Input Burst Duration
0.7
0.6
0.5
0.4
0.3
l = 950 nm,
optical test signal, fig.1
0.2
0.1
0.0
0.1
1.0
10.0
mW/m2
1.0
0.8
0.6
0.4
Figure 2. Pulse Length and Sensitivity in Dark Ambient
0.9
1.1
1.3
f/f0 – Relative Frequency
16925
)
f = f0"5%
Df ( 3dB ) = f0/10
0.2
0.0
0.7
100.0 1000.010000.0
Ee – Irradiance (
16908
Figure 5. Frequency Dependence of Responsivity
t
600 ms
T = 60 ms
94 8134
Output Signal, ( see Fig.4 )
VOH
VOL
Ton
Toff
Ee min– Threshold Irradiance ( mW/m 2 )
Optical Test Signal
600 ms
VO
Toff
0.4
Figure 1. Output Function
Ee
Ton
0.7
t
16911
Figure 3. Output Function
Document Number 82022
Rev. 1.7, 27-Jan-05
4.0
3.5
3.0
Correlation with ambient light sources:
10W/m2^1.4klx (Std.illum.A,T=2855K)
10W/m2^8.2klx (Daylight,T=5900K)
2.5
2.0
1.5
Ambient, l = 950 nm
1.0
0.5
0.0
0.01
0.10
1.00
10.00
100.00
E – Ambient DC Irradiance (W/m2)
Figure 6. Sensitivity in Bright Ambient
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3
TSOP12..WI1
VISHAY
16912
2.0
f = fo
1.5
f = 10 kHz
1.0
f = 1 kHz
0.5
f = 100 Hz
0.0
0.1
1.0
10.0
100.0
1000.0
DVsRMS – AC Voltage on DC Supply Voltage (mV)
0.6
Ee min– Threshold Irradiance ( mW/m 2 )
Ee min– Threshold Irradiance ( mW/m 2 )
Vishay Semiconductors
0.4
0.3
0.2
0.1
16918
0.0
–30 –15 0
15 30 45 60 75
Tamb – Ambient Temperature ( qC )
f(E) = f0
1.6
1.2
0.8
0.4
0.0
0.0
0.4
0.8
1.2
E – Field Strength of Disturbance ( kV/m )
94 8147
1.2
1.0
0.8
0.6
0.4
0.2
0
750
2.0
1.6
Figure 8. Sensitivity vs. Electric Field Disturbances
90
Figure 10. Sensitivity vs. Ambient Temperature
S ( l ) rel – Relative Spectral Sensitivity
E e min– Threshold Irradiance ( mW/m 2 )
Figure 7. Sensitivity vs. Supply Voltage Disturbances
2.0
Sensitivity in dark ambient
0.5
850
950
1050
1150
l – Wavelength ( nm )
94 8408
Figure 11. Relative Spectral Sensitivity vs. Wavelength
0°
0.8
10°
20°
30°
Max. Envelope Duty Cycle
0.7
0.6
40°
0.5
1.0
0.4
0.9
50°
0.8
60°
0.3
0.2
f = 38 kHz, Ee = 2 mW/m2
70°
0.7
0.1
80°
0.0
0
16913
20
40
60
80
100
120
Burst Length ( number of cycles / burst )
Figure 9. Max. Envelope Duty Cycle vs. Burstlength
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4
0.6
95 11340p2
0.4 0.2
0
0.2
0.4 0.6
d rel - Relative Transmission Distance
Figure 12. Horizontal Directivity ϕx
Document Number 82022
Rev. 1.7, 27-Jan-05
TSOP12..WI1
VISHAY
Vishay Semiconductors
0°
10°
20°
30°
• Continuous signal at 38 kHz or at any other frequency
• Signals from fluorescent lamps with electronic ballast with high or low modulation (see Figure 14 or Figure 15).
40°
1.0
0.9
50°
0.8
60°
80°
95 11339p2
0.6 0.4 0.2
0
0.2
0.4 0.6
d rel - Relative Transmission Distance
IR Signal
70°
0.7
Figure 13. Vertical Directivity ϕy
IR Signal from fluorescent
lamp with low modulation
Suitable Data Format
Document Number 82022
Rev. 1.7, 27-Jan-05
5
10
Time ( ms )
15
20
Figure 14. IR Signal from Fluorescent Lamp with low Modulation
IR Signal from fluorescent
lamp with high modulation
IR Signal
The circuit of the TSOP12..WI1 is designed in that
way that unexpected output pulses due to noise or
disturbance signals are avoided. A bandpass filter, an
integrator stage and an automatic gain control are
used to suppress such disturbances.
The distinguishing mark between data signal and disturbance signal are carrier frequency, burst length
and duty cycle.
The data signal should fulfill the following conditions:
• Carrier frequency should be close to center frequency of the bandpass (e.g. 38 kHz).
• Burst length should be 10 cycles/burst or longer.
• After each burst which is between 10 cycles and 70
cycles a gap time of at least 14 cycles is necessary.
• For each burst which is longer than 1.8 ms a corresponding gap time is necessary at some time in the
data stream. This gap time should be at least 4 times
longer than the burst.
• Up to 800 short bursts per second can be received
continuously.
Some examples for suitable data format are: NEC
Code (repetitive pulse), NEC Code (repetitive data),
Toshiba Micom Format, Sharp Code, RC5 Code,
RC6 Code, R-2000 Code, Sony Code.
When a disturbance signal is applied to the
TSOP12..WI1 it can still receive the data signal. However the sensitivity is reduced to that level that no
unexpected pulses will occur.
Some examples for such disturbance signals which
are suppressed by the TSOP12..WI1 are:
• DC light (e.g. from tungsten bulb or sunlight)
0
16920
0
16921
5
10
Time ( ms )
15
20
Figure 15. IR Signal from Fluorescent Lamp with high Modulation
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TSOP12..WI1
VISHAY
Vishay Semiconductors
Package Dimensions in mm
12828
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6
Document Number 82022
Rev. 1.7, 27-Jan-05
TSOP12..WI1
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 82022
Rev. 1.7, 27-Jan-05
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Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
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or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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Document Number: 91000
Revision: 08-Apr-05
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