CM1631 LCD and Camera EMI Filter Array with ESD Protection Product Description The CM1631 is a family of pi−style EMI filter arrays with ESD protection, which integrates four, six, or eight filters (C−R−C) in a small form factor, UDFN 0.40 mm pitch package. The CM1631 has component values of 15 pF − 100 W − 15 pF per channel with a cut−off frequency of 120 MHz, and can be used in applications with data rates up to 48 Mbps. The device includes ESD diodes on every pin, that provide a very high level of protection for sensitive electronic components against possible electrostatic discharge (ESD). The ESD protection diodes safely dissipate ESD strikes of ±15 kV, which is well beyond the maximum requirement of the IEC61000−4−2 international standard. Using the MIL−STD−883 (Method 3015) specification for Human Body Model (HBM) ESD, the pins are protected for contact discharges greater than ±30 kV. These devices are particularly well−suited for portable electronics (e.g. wireless handsets, PDAs, notebook computers) because of their small package and easy−to−use pin assignments. In particular, the CM1631 is ideal for EMI filtering and protecting data and control lines for the I/O data ports, LCD display and camera interface in mobile handsets. The CM1631 is housed in space−saving, ultra−low−profile 8−, 12− and 16−lead UDFN packages with a 0.40 mm pitch and is available with lead−free finishing. This smaller size UDFN package provides up to 42% board space saving vs. the 0.50 mm pitch UDFN packages. http://onsemi.com Filter + ESDn* • • • • • • • • Applications • LCD and Camera Data Lines in Mobile Handsets • EMI Filtering for Data Ports in Cell Phones, PDAs or • April, 2011 − Rev. 1 C R C 15 pF GND 15 pF 1 of 4, 6 or 8 EMI/RFI + ESD Channels * See Package/Pinout Diagrams for expanded pin information. MARKING DIAGRAM P31E MG G 1 1 1 UE P31E P318E M G P318E MG G = CM1631−04DE = CM1631−06DE = CM1631−08DE = Date Code = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† CM1631−04DE UDFN−8 (Pb−Free) UDFN−12 (Pb−Free) UDFN−16 (Pb−Free) 3000/Tape & Reel CM1631−06DE CM1631−08DE 3000/Tape & Reel 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. • I/O Port Protection for Mobile Handsets, Notebook Computers, PDAs, etc. • Handheld PCs/PDAs • Wireless Handsets Notebook Computers LCD and Camera Modules © Semiconductor Components Industries, LLC, 2011 Filter + ESDn* 100 W UE MG G ESD Protection Pi−Style EMI Filters in a Capacitor−Resistor−Capacitor (C−R−C) Network ±15 kV ESD Protection on Each Channel (IEC 61000−4−2 Level 4, Contact Discharge) ±30 kV ESD Protection on Each Channel (HBM) Greater than 35 dB Attenuation (Typical) at 1 GHz UDFN Package with 0.40 mm Lead Pitch: ♦ 4−ch. = 8−lead UDFN ♦ 6−ch. = 12−lead UDFN ♦ 8−ch. = 16−lead UDFN Tiny UDFN Package Size: ♦ 8−lead: 1.70 mm x 1.35 x 0.50 mm ♦ 12−lead: 2.50 mm x 1.35 x 0.50 mm ♦ 16−lead: 3.30 mm x 1.35 x 0.50 mm Increased Robustness against Vertical Impacts During Manufacturing Process These Devices are Pb−Free and are RoHS Compliant UDFN16 DE SUFFIX CASE 517BE ELECTRICAL SCHEMATIC Features • Four, Six and Eight Channels of EMI Filtering with Integrated UDFN12 DE SUFFIX CASE 517BD UDFN8 DE SUFFIX CASE 517BC 1 Publication Order Number: CM1631/D CM1631 PACKAGE / PINOUT DIAGRAMS Top View (Pins Down View) 8 7 6 5 Pin 1 Marking Bottom View (Pins Up View) 1 2 3 4 GND PAD UE Top View (Pins Down View) 12 11 10 9 8 7 Bottom View (Pins Up View) 1 2 3 4 5 6 P31E GND PAD Pin 1 Marking 1 2 3 4 5 6 12 11 10 9 8 7 CM1631−06DE 12 Lead UDFN Package 1 2 3 4 8 7 6 5 CM1631−04DE 8 Lead UDFN Package Pin 1 Marking Top View (Pins Down View) 16 15 14 13 12 11 10 9 Bottom View (Pins Up View) 1 2 3 4 5 6 7 8 P318E GND PAD 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 CM1631−08DE 16 Lead UDFN Package Table 1. PIN DESCRIPTIONS Device Pin(s) Device Pin(s) −04 −06 −08 −04 Name −06 −08 1 1 1 FILTER1 Name Filter + ESD Channel 1 8 12 16 FILTER1 Filter + ESD Channel 1 2 2 2 FILTER2 Filter + ESD Channel 2 7 11 15 FILTER2 Filter + ESD Channel 2 3 3 3 FILTER3 Filter + ESD Channel 3 6 10 14 FILTER3 Filter + ESD Channel 3 4 4 4 FILTER4 Filter + ESD Channel 4 5 9 13 FILTER4 Filter + ESD Channel 4 − 5 5 FILTER5 Filter + ESD Channel 5 − 8 12 FILTER5 Filter + ESD Channel 5 − 6 6 FILTER6 Filter + ESD Channel 6 − 7 11 FILTER6 Filter + ESD Channel 6 − − 7 FILTER7 Filter + ESD Channel 7 − − 10 FILTER7 Filter + ESD Channel 7 − − 8 FILTER8 Filter + ESD Channel 8 − − 9 FILTER8 Filter + ESD Channel 8 Device Ground − − − − GND PAD GND Description http://onsemi.com 2 Description CM1631 SPECIFICATIONS Table 2. ABSOLUTE MAXIMUM RATINGS Parameter Rating Units −65 to +150 °C DC Power per Resistor 100 mW DC Package Power Rating 500 mW Storage Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Table 3. STANDARD OPERATING CONDITIONS Parameter Operating Temperature Range Rating Units –40 to +85 °C Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1) Symbol R Parameter Conditions Typ Max Units 80 100 120 W Total Channel Capacitance At 2.5 V DC Reverse Bias, 1 MHz, 30 mV AC 24 30 36 pF Capacitance C At 2.5 V DC Reverse Bias, 1 MHz, 30 mV AC 12 15 18 pF Stand−off Voltage IDIODE = 10 mA 6.0 ILEAK Diode Leakage Current (Reverse Bias) VDIODE = 3.3 V 0.1 VSIG Signal Clamp Voltage Positive Clamp Negative Clamp ILOAD = 10 mA ILOAD = −10 mA VESD In−system ESD Withstand Voltage a) Human Body Model, MIL−STD−883, Method 3015 b) Contact Discharge per IEC 61000−4−2 Level 4 CTOTAL C VDIODE RDYN fC A1GHz A800MHz − 6GHz Resistance Min (Note 2) 5.6 −0.4 6.8 −0.8 V 1.0 mA V kV ±30 ±15 Dynamic Resistance Positive Negative 2.3 0.9 W Cut−off Frequency ZSOURCE = 50 W, ZLOAD = 50 W Channel R = 100 W, Channel C = 15 pF Absolute Attenuation @ 1 GHz from 0 dB Level ZSOURCE = 50 W, ZLOAD = 50 W, DC Bias = 0 V (Notes 1 and 3) 35 dB Absolute Attenuation @ 800 MHz to 6 GHz from 0 dB Level ZSOURCE = 50 W, ZLOAD = 50 W, DC Bias = 0 V (Notes 1 and 3) 30 dB 1. TA = 25°C unless otherwise specified. 2. ESD applied to input and output pins with respect to GND, one at a time. 3. Attenuation / RF curves characterized by a network analyzer using microprobes. http://onsemi.com 3 110 MHz CM1631 PERFORMANCE INFORMATION Typical Filter Performance (TA = 255C, DC Bias = 0 V, 50 W Environment) 0 dB −5 dB −10 dB INSERTION LOSS −15 dB −20 dB −25 dB −30 dB −35 dB −40 dB −45 dB −50 dB 3 MHz 10 MHz 100 MHz 1 GHz 6 GHz FREQUENCY Figure 1. Insertion Loss vs. Frequency (FILTER1 Input to GND, CM1631−04DE) 0 dB −5 dB −10 dB INSERTION LOSS −15 dB −20 dB −25 dB −30 dB −35 dB −40 dB −45 dB −50 dB 3 MHz 10 MHz 100 MHz 1 GHz 6 GHz FREQUENCY Figure 2. Insertion Loss vs. Frequency (FILTER2 Input to GND, CM1631−04DE) http://onsemi.com 4 CM1631 PERFORMANCE INFORMATION (Cont’d) Typical Filter Performance (TA = 255C, DC Bias = 0 V, 50 W Environment) 0 dB −5 dB −10 dB INSERTION LOSS −15 dB −20 dB −25 dB −30 dB −35 dB −40 dB −45 dB −50 dB 3 MHz 10 MHz 100 MHz 1 GHz 6 GHz FREQUENCY Figure 3. Insertion Loss vs. Frequency (FILTER3 Input to GND, CM1631−04DE) 0 dB −5 dB −10 dB INSERTION LOSS −15 dB −20 dB −25 dB −30 dB −35 dB −40 dB −45 dB −50 dB 3 MHz 10 MHz 100 MHz 1 GHz 6 GHz FREQUENCY Figure 4. Insertion Loss vs. Frequency (FILTER4 Input to GND, CM1631−04DE) http://onsemi.com 5 CM1631 PERFORMANCE INFORMATION (Cont’d) Typical Filter Performance (TA = 255C, DC Bias = 0 V, 50 W Environment) 0 dB −5 dB −10 dB INSERTION LOSS −15 dB −20 dB −25 dB −30 dB −35 dB −40 dB −45 dB −50 dB 3 MHz 10 MHz 100 MHz 1 GHz 6 GHz FREQUENCY Figure 5. Insertion Loss vs. Frequency (FILTER1 Input to GND, CM1631−06DE) 0 dB −5 dB −10 dB INSERTION LOSS −15 dB −20 dB −25 dB −30 dB −35 dB −40 dB −45 dB −50 dB 3 MHz 10 MHz 100 MHz 1 GHz 6 GHz FREQUENCY Figure 6. Insertion Loss vs. Frequency (FILTER2 Input to GND, CM1631−06DE) http://onsemi.com 6 CM1631 PERFORMANCE INFORMATION (Cont’d) Typical Filter Performance (TA = 255C, DC Bias = 0 V, 50 W Environment) 0 dB −5 dB −10 dB INSERTION LOSS −15 dB −20 dB −25 dB −30 dB −35 dB −40 dB −45 dB −50 dB 3 MHz 10 MHz 100 MHz 1 GHz 6 GHz FREQUENCY Figure 7. Insertion Loss vs. Frequency (FILTER3 Input to GND, CM1631−06DE) 0 dB −5 dB −10 dB INSERTION LOSS −15 dB −20 dB −25 dB −30 dB −35 dB −40 dB −45 dB −50 dB 3 MHz 10 MHz 100 MHz 1 GHz 6 GHz FREQUENCY Figure 8. Insertion Loss vs. Frequency (FILTER4 Input to GND, CM1631−06DE) http://onsemi.com 7 CM1631 PERFORMANCE INFORMATION (Cont’d) Typical Filter Performance (TA = 255C, DC Bias = 0 V, 50 W Environment) 0 dB −5 dB −10 dB INSERTION LOSS −15 dB −20 dB −25 dB −30 dB −35 dB −40 dB −45 dB −50 dB 3 MHz 10 MHz 100 MHz 1 GHz 6 GHz FREQUENCY Figure 9. Insertion Loss vs. Frequency (FILTER5 Input to GND, CM1631−06DE) 0 dB −5 dB −10 dB INSERTION LOSS −15 dB −20 dB −25 dB −30 dB −35 dB −40 dB −45 dB −50 dB 3 MHz 10 MHz 100 MHz 1 GHz 6 GHz FREQUENCY Figure 10. Insertion Loss vs. Frequency (FILTER6 Input to GND, CM1631−06DE) http://onsemi.com 8 CM1631 PERFORMANCE INFORMATION (Cont’d) Typical Filter Performance (TA = 255C, DC Bias = 0 V, 50 W Environment) 0 dB −5 dB −10 dB INSERTION LOSS −15 dB −20 dB −25 dB −30 dB −35 dB −40 dB −45 dB −50 dB 3 MHz 10 MHz 100 MHz 1 GHz 6 GHz FREQUENCY Figure 11. Insertion Loss vs. Frequency (FILTER1 Input to GND, CM1631−08DE) 0 dB −5 dB −10 dB INSERTION LOSS −15 dB −20 dB −25 dB −30 dB −35 dB −40 dB −45 dB −50 dB 3 MHz 10 MHz 100 MHz 1 GHz 6 GHz FREQUENCY Figure 12. Insertion Loss vs. Frequency (FILTER2 Input to GND, CM1631−08DE) http://onsemi.com 9 CM1631 PERFORMANCE INFORMATION (Cont’d) Typical Filter Performance (TA = 255C, DC Bias = 0 V, 50 W Environment) 0 dB −5 dB −10 dB INSERTION LOSS −15 dB −20 dB −25 dB −30 dB −35 dB −40 dB −45 dB −50 dB 3 MHz 10 MHz 100 MHz 1 GHz 6 GHz FREQUENCY Figure 13. Insertion Loss vs. Frequency (FILTER3 Input to GND, CM1631−08DE) 0 dB −5 dB −10 dB INSERTION LOSS −15 dB −20 dB −25 dB −30 dB −35 dB −40 dB −45 dB −50 dB 3 MHz 10 MHz 100 MHz 1 GHz 6 GHz FREQUENCY Figure 14. Insertion Loss vs. Frequency (FILTER4 Input to GND, CM1631−08DE) http://onsemi.com 10 CM1631 PERFORMANCE INFORMATION (Cont’d) Typical Filter Performance (TA = 255C, DC Bias = 0 V, 50 W Environment) 0 dB −5 dB −10 dB INSERTION LOSS −15 dB −20 dB −25 dB −30 dB −35 dB −40 dB −45 dB −50 dB 3 MHz 10 MHz 100 MHz 1 GHz 6 GHz FREQUENCY Figure 15. Insertion Loss vs. Frequency (FILTER5 Input to GND, CM1631−08DE) 0 dB −5 dB −10 dB INSERTION LOSS −15 dB −20 dB −25 dB −30 dB −35 dB −40 dB −45 dB −50 dB 3 MHz 10 MHz 100 MHz 1 GHz 6 GHz FREQUENCY Figure 16. Insertion Loss vs. Frequency (FILTER6 Input to GND, CM1631−08DE) http://onsemi.com 11 CM1631 PERFORMANCE INFORMATION (Cont’d) Typical Filter Performance (TA = 255C, DC Bias = 0 V, 50 W Environment) 0 dB −5 dB −10 dB INSERTION LOSS −15 dB −20 dB −25 dB −30 dB −35 dB −40 dB −45 dB −50 dB 3 MHz 10 MHz 100 MHz 1 GHz 6 GHz FREQUENCY Figure 17. Insertion Loss vs. Frequency (FILTER7 Input to GND, CM1631−08DE) 0 dB −5 dB −10 dB INSERTION LOSS −15 dB −20 dB −25 dB −30 dB −35 dB −40 dB −45 dB −50 dB 3 MHz 10 MHz 100 MHz 1 GHz 6 GHz FREQUENCY Figure 18. Insertion Loss vs. Frequency (FILTER8 Input to GND, CM1631−08DE) http://onsemi.com 12 CM1631 PERFORMANCE INFORMATION (Cont’d) Capacitance (Normalized) Typical Diode Capacitance vs. Input Voltage DC Voltage Figure 19. Filter Capacitance vs. Input Voltage (normalized to capacitance at 2.5 V DC and 255C) http://onsemi.com 13 CM1631 PACKAGE DIMENSIONS UDFN8, 1.7x1.35, 0.4P CASE 517BC−01 ISSUE O A B D 2X 0.10 C PIN ONE REFERENCE 2X 0.10 C ÉÉ ÉÉ ÇÇ ÉÉ MOLD CMPD EXPOSED Cu A1 E NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.25 mm FROM THE TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. A3 DETAIL B ALTERNATE CONSTRUCTIONS TOP VIEW A DETAIL B 0.05 C 8X L L1 DETAIL A 0.05 C NOTE 4 SIDE VIEW DETAIL A 8X L (A3) L A1 C SEATING PLANE ALTERNATE TERMINAL CONSTRUCTIONS D2 1 8X K e e/2 MILLIMETERS MIN MAX 0.45 0.55 0.00 0.05 0.13 REF 0.15 0.25 1.70 BSC 1.10 1.30 1.35 BSC 0.30 0.50 0.40 BSC 0.15 −−− 0.20 0.30 −−− 0.05 RECOMMENDED SOLDERING FOOTPRINT* E2 1.40 8 DIM A A1 A3 b D D2 E E2 e K L L1 8X 0.40 8X b 0.10 C A B 0.05 C NOTE 3 PACKAGE OUTLINE BOTTOM VIEW 1.55 0.50 8X 1 0.25 0.40 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 14 CM1631 PACKAGE DIMENSIONS UDFN12, 2.5x1.35, 0.4P CASE 517BD−01 ISSUE O A B D 2X 0.10 C PIN ONE REFERENCE 2X L1 ÉÉÉ ÉÉÉ 0.10 C DETAIL A E OPTIONAL CONSTRUCTIONS TOP VIEW A DETAIL B (A3) A1 0.05 C NOTE 4 12X A1 SIDE VIEW 6 1 K 12 C SEATING PLANE ÇÇ ÉÉ ÉÉ A3 DETAIL B OPTIONAL CONSTRUCTION DIM A A1 A3 b D D2 E E2 e K L L1 MILLIMETERS MIN MAX 0.45 0.55 0.00 0.05 0.13 REF 0.15 0.25 2.50 BSC 1.90 2.10 1.35 BSC 0.30 0.50 0.40 BSC 0.15 −−− 0.20 0.30 −−− 0.05 DETAIL A D2 L MOLD CMPD EXPOSED Cu 0.05 C 12X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.25 mm FROM THE TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. L L 7 e BOTTOM VIEW RECOMMENDED SOLDERING FOOTPRINT* E2 12X PACKAGE OUTLINE b 2.20 12X 0.40 0.10 C A B 0.05 C NOTE 3 1.55 0.50 12X 0.40 PITCH 0.25 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 15 CM1631 PACKAGE DIMENSIONS UDFN16, 3.3x1.35, 0.4P CASE 517BE−01 ISSUE O A B D 2X 0.10 C PIN ONE REFERENCE 2X 0.10 C L1 ÉÉÉ ÉÉÉ DETAIL A E OPTIONAL CONSTRUCTIONS TOP VIEW EXPOSED Cu A DETAIL B 0.05 C (A3) 16X A1 0.05 C NOTE 4 16X A1 SIDE VIEW K 1 8 16 9 e C SEATING PLANE DIM A A1 A3 b D D2 E E2 e K L L1 MOLD CMPD ÇÇ ÉÉ ÉÉ A3 DETAIL B OPTIONAL CONSTRUCTION MILLIMETERS MIN MAX 0.45 0.55 0.00 0.05 0.13 REF 0.15 0.25 3.30 BSC 2.70 2.90 1.35 BSC 0.30 0.50 0.40 BSC 0.15 −−− 0.20 0.30 −−− 0.05 DETAIL A D2 L NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.25 mm FROM THE TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. L L RECOMMENDED SOLDERING FOOTPRINT* E2 16X PACKAGE OUTLINE b BOTTOM VIEW 3.00 16X 0.40 0.10 C A B 0.05 C NOTE 3 1.55 0.50 16X 0.40 PITCH 0.25 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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