Freescale Semiconductor Technical Data Document Number: MML20211H Rev. 1, 9/2014 Enhancement Mode pHEMT Technology (E--pHEMT) Low Noise Amplifier MML20211HT1 The MML20211H is a single--stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed for a range of low noise, high linearity applications such as pico cell, femto cell, tower mounted amplifiers (TMA) and receiver front end circuits. It operates from a single voltage supply and is suitable for applications with frequencies from 1400 to 2800 MHz such as TD--SCDMA, W--CDMA, UMTS, PCS, LTE and BWA. 1400--2800 MHz, 18.6 dB 21.3 dBm E--pHEMT LNA Features Ultra Low Noise Figure: 0.65 dB @ 2140 MHz Frequency: 1400--2800 MHz High Reverse Isolation: --35 dB @ 2140 MHz P1dB: 21.3 dBm @ 2140 MHz Small--Signal Gain: 18.6 dB @ 2140 MHz (adjustable externally) Third Order Output Intercept Point: 33 dBm @ 2140 MHz Active Bias Control (adjustable externally) Single 5 V Supply Supply Current: 60 mA 50 Ohm Operation (some external matching required) Cost--effective 8--pin, 2 mm DFN Surface Mount Plastic Package In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. Table 1. Typical Performance (1) DFN 2 2 Table 2. Maximum Ratings Rating Characteristic Symbol 1400 MHz 1800 MHz 2140 MHz 2700 MHz Unit Noise Figure (2) NF 0.65 0.65 0.65 0.85 dB Input Return Loss (S11) IRL --19.5 --16 --16.7 --17.3 dB Output Return Loss (S22) ORL --24.9 --28 --26.6 --20 dB Small--Signal Gain (S21) Gp 21.3 19.7 18.6 18.1 dB Power Output @ 1dB Compression P1dB 21.1 21.1 21.3 19.6 dBm Third Order Input Intercept Point IIP3 10.8 12.5 14.4 14.9 dBm Third Order Output Intercept Point OIP3 32.1 32.2 33 33 dBm Symbol Value Unit Supply Voltage VDD 6 V Supply Current IDD 200 mA RF Input Power Pin 22 dBm Storage Temperature Range Tstg --65 to +150 C Junction Temperature TJ 175 C 1. VDD = 5 Vdc, TA = 25C, 50 ohm system, application circuit tuned for specified frequency. 2. Noise figure value calculated with connector losses removed. Table 3. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 87C, 5 Vdc, IDD = 60 mA, no RF applied Symbol Value (3) Unit RJC 43.4 C/W 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. Freescale Semiconductor, Inc., 2011, 2014. All rights reserved. RF Device Data Freescale Semiconductor MML20211HT1 1 Table 4. Electrical Characteristics (VDD = 5 Vdc, 2140 MHz, TA = 25C, 50 ohm system, in Freescale Application Circuit) Symbol Min Typ Max Unit Small--Signal Gain (S21) Gp 15 18.6 — dB Input Return Loss (S11) IRL — --16.7 — dB Output Return Loss (S22) ORL — --26.6 — dB Power Output @ 1dB Compression P1dB — 21.3 — dBm Third Order Input Intercept Point IIP3 — 14.4 — dBm Third Order Output Intercept Point OIP3 — 33 — dBm Reverse Isolation (S12) |S12| — --35 — dB NF — 0.65 — dB IDD 45 60 85 mA VDD — 5 — V Characteristic Noise Figure (1) Supply Current (2) Supply Voltage 1. Noise figure value calculated with connector losses removed. 2. DC current measured with no RF signal applied. Table 5. Functional Pin Description Pin Number Pin Function 1 RFin RFin 1 2 RFin RFin 2 RFMATCH 3 VBIAS 4 3 RF Input Matching Termination 4 Bias Voltage DC Supply 5 RF Feedback 6 RFout/DC Supply 7 RFout/DC Supply 8 No Connection GND 8 N.C. 7 RFout 6 RFout 5 FB (Top View) Figure 1. Pin Connections Table 6. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 0 Machine Model (per EIA/JESD22--A115) A Charge Device Model (per JESD22--C101) IV Table 7. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 1 260 C MML20211HT1 2 RF Device Data Freescale Semiconductor 50 OHM APPLICATION CIRCUIT: 2140 MHz VDD R3 C4 C8 C7 R2 RF INPUT Z1 Z2 Z6 Z3 1 C9 C3 8 N.C. L2 C1 RF OUTPUT 7 2 Z4 L1 Z5 C2 3 6 C6 BIAS CIRCUIT C5 4 Z1 Z2 Z3 0.080 x 0.021 Microstrip 0.218 x 0.021 Microstrip 0.044 x 0.011 Microstrip Z4 Z5 Z6 R1 5 0.020 x 0.031 Microstrip 0.038 x 0.021 Microstrip 0.021 x 0.080 Microstrip Figure 2. MML20211HT1 Test Circuit Schematic Table 8. MML20211HT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C5 18 pF Chip Capacitors GJM1555C1H180JB01D Murata C2, C3, C6, C7 18 pF Chip Capacitors GRM1555C1H180JA01D Murata C4, C8 0.1 F Chip Capacitors GRM155R61A104KA01D Murata C9 0.6 pF Chip Capacitor GJM1555C1HR60BB01D Murata L1, L2 3.6 nH Chip Inductors 0402HP--3N6XGL Coilcraft R1 180 , 1/16 W Chip Resistor RC0402FR--07180RL Yageo R2 0 , 1 A Chip Resistor ERJ2GE0R00X Panasonic R3 1.5 k, 1/16 W Chip Resistor RC0402FR--071K5L Yageo PCB 0.010, r = 3.38, Multilayer IS680--3.38 Isola MML20211HT1 RF Device Data Freescale Semiconductor 3 50 OHM APPLICATION CIRCUIT: 2140 MHz VDD 5 V C4 Via A R3 RFIN RFOUT C9 C3 C1 L2 L1 C6 C5 R2 C2 R1 C7 C8 DFN 2x2--8C Rev. 0 Via A NOTE: To achieve optimal noise performance, it is critical that proper biasing, input matching, supply decoupling and grounding are employed. Figure 3. MML20211HT1 Test Circuit Component Layout Table 8. MML20211HT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C5 18 pF Chip Capacitors GJM1555C1H180JB01D Murata C2, C3, C6, C7 18 pF Chip Capacitors GRM1555C1H180JA01D Murata C4, C8 0.1 F Chip Capacitors GRM155R61A104KA01D Murata C9 0.6 pF Chip Capacitor GJM1555C1HR60BB01D Murata L1, L2 3.6 nH Chip Inductors 0402HP--3N6XGL Coilcraft R1 180 , 1/16 W Chip Resistor RC0402FR--07180RL Yageo R2 0 , 1 A Chip Resistor ERJ2GE0R00X Panasonic R3 1.5 k, 1/16 W Chip Resistor RC0402FR--071K5L Yageo PCB 0.010, r = 3.38, Multilayer IS680--3.38 Isola (Test Circuit Component Designations and Values repeated for reference.) MML20211HT1 4 RF Device Data Freescale Semiconductor --3 35 --26 --6 --28 30 --9 --30 25 --12 S12 (dB) S11 (dB) 50 OHM TYPICAL CHARACTERISTICS: 2140 MHz 85C --15 --18 --40C VDD = 5 Vdc 2060 85C 2120 2180 2240 0 --40 2000 2300 VDD = 5 Vdc 2060 2120 2180 2240 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 4. S11 versus Frequency versus Temperature Figure 5. S12 versus Frequency versus Temperature --19 21 --22 20 --25 19 18 2300 85C 25C 25C S22 (dB) --40C S21 (dB) --40C --38 5 22 85C 17 --28 --31 --40C --34 16 15 2000 25C 15 --34 --36 10 25C --21 --24 2000 --32 20 --37 VDD = 5 Vdc 2060 2120 2180 2240 2300 --40 2000 VDD = 5 Vdc 2060 2120 2180 2240 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 6. S21 versus Frequency versus Temperature Figure 7. S22 versus Frequency versus Temperature 2300 MML20211HT1 RF Device Data Freescale Semiconductor 5 50 OHM TYPICAL CHARACTERISTICS: 2140 MHz 22 1.4 21 20 1 Gps, POWER GAIN (dB) NF, NOISE FIGURE (dB) 1.2 85C 0.8 25C 0.6 --40C 0.4 0.2 2040 2080 2120 2160 25C 16 85C 15 14 VDD = 5 Vdc f = 2140 MHz 6 2240 8 10 12 14 18 16 20 f, FREQUENCY (MHz) Pout, OUTPUT POWER (dBm) Figure 8. Noise Figure versus Frequency versus Temperature Figure 9. Power Gain versus Output Power versus Temperature, CW 36 34 32 30 28 26 24 VDD = 5 Vdc f = 2140 MHz 1 MHz Tone Spacing 22 20 20 17 12 2200 38 18 --40C 18 13 VDD = 5 Vdc 30 40 50 60 70 80 90 100 IDD, CURRENT (mA) OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 0 19 P1dB, 1 dB COMPRESSION POINT, CW (dBm) Figure 10. Third Order Output Intercept Point (Two--Tone) versus IDD Current 22 36 35 34 25C --40C 33 85C 32 31 VDD = 5 Vdc 1 MHz Tone Spacing 30 29 2040 2080 2120 2160 2200 2240 f, FREQUENCY (MHz) Figure 11. Third Order Output Intercept Point (Two--Tone) versus Frequency versus Temperature 24 23 --40C 22 21 85C 25C 20 19 18 17 2040 VDD = 5 Vdc 2080 2120 2160 2200 2240 f, FREQUENCY (MHz) Figure 12. P1dB versus Frequency versus Temperature, CW MML20211HT1 6 RF Device Data Freescale Semiconductor 50 OHM APPLICATION CIRCUIT: 1800 MHz VDD R3 C4 C8 C7 R2 RF INPUT Z1 Z2 Z6 Z3 1 C9 C3 8 N.C. L2 C1 RF OUTPUT 7 2 Z4 L1 Z5 C2 3 6 C6 BIAS CIRCUIT C5 4 Z1 Z2 Z3 0.080 x 0.021 Microstrip 0.218 x 0.021 Microstrip 0.044 x 0.011 Microstrip Z4 Z5 Z6 R1 5 0.020 x 0.031 Microstrip 0.038 x 0.021 Microstrip 0.021 x 0.080 Microstrip Figure 13. MML20211HT1 Test Circuit Schematic Table 9. MML20211HT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C5 18 pF Chip Capacitors GJM1555C1H180JB01D Murata C2, C3, C6, C7 18 pF Chip Capacitors GRM1555C1H180JA01D Murata C4, C8 0.1 F Chip Capacitors GRM155R61A104KA01D Murata C9 0.7 pF Chip Capacitor GJM1555C1HR70BB01D Murata L1 3.6 nH Chip Inductor 0402HP--3N6XGL Coilcraft L2 4.7 nH Chip Inductor 0402CS--4N7 Coilcraft R1 180 , 1/16 W Chip Resistor RC0402FR--07180RL Yageo R2 0 , 1 A Chip Resistor ERJ2GE0R00X Panasonic R3 1.5 k, 1/16 W Chip Resistor RC0402FR--071K5L Yageo PCB 0.010, r = 3.38, Multilayer IS680--3.38 Isola MML20211HT1 RF Device Data Freescale Semiconductor 7 50 OHM APPLICATION CIRCUIT: 1800 MHz VDD 5 V C4 Via A R3 RFIN RFOUT C9 C3 C1 L2 L1 C6 C5 R2 C2 R1 C7 C8 DFN 2x2--8C Rev. 0 Via A NOTE: To achieve optimal noise performance, it is critical that proper biasing, input matching, supply decoupling and grounding are employed. Figure 14. MML20211HT1 Test Circuit Component Layout Table 9. MML20211HT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C5 18 pF Chip Capacitors GJM1555C1H180JB01D Murata C2, C3, C6, C7 18 pF Chip Capacitors GRM1555C1H180JA01D Murata C4, C8 0.1 F Chip Capacitors GRM155R61A104KA01D Murata C9 0.7 pF Chip Capacitor GJM1555C1HR70BB01D Murata L1 3.6 nH Chip Inductor 0402HP--3N6XGL Coilcraft L2 4.7 nH Chip Inductor 0402CS--4N7 Coilcraft R1 180 , 1/16 W Chip Resistor RC0402FR--07180RL Yageo R2 0 , 1 A Chip Resistor ERJ2GE0R00X Panasonic R3 1.5 k, 1/16 W Chip Resistor RC0402FR--071K5L Yageo PCB 0.010, r = 3.38, Multilayer IS680--3.38 Isola (Test Circuit Component Designations and Values repeated for reference.) MML20211HT1 8 RF Device Data Freescale Semiconductor --3 --26 35 --6 --28 30 --9 --30 25 --12 --32 20 S12 (dB) S11 (dB) 50 OHM TYPICAL CHARACTERISTICS: 1800 MHz --15 --36 10 --18 --385 --21 VDD = 5 Vdc 1710 1770 1830 1890 --400 1650 1950 1710 1770 1830 1890 f, FREQUENCY (MHz) Figure 15. S11 versus Frequency Figure 16. S12 versus Frequency 22 --16 21 --19 20 --22 19 --25 18 17 1950 --28 --31 16 15 1650 VDD = 5 Vdc f, FREQUENCY (MHz) S22 (dB) S21 (dB) --24 1650 --34 15 --34 VDD = 5 Vdc 1710 1770 1830 1890 1950 --37 1650 VDD = 5 Vdc 1710 1770 1830 1890 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 17. S21 versus Frequency Figure 18. S22 versus Frequency 1950 MML20211HT1 RF Device Data Freescale Semiconductor 9 1.4 NF, NOISE FIGURE (dB) 1.2 1 0.8 0.6 0.4 0.2 0 1700 VDD = 5 Vdc 1740 1780 1820 1860 f, FREQUENCY (MHz) Figure 19. Noise Figure versus Frequency 1900 OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 50 OHM TYPICAL CHARACTERISTICS: 1800 MHz 36 35 34 33 32 31 VDD = 5 Vdc 1 MHz Tone Spacing 30 29 1700 1740 1780 1820 1860 1900 f, FREQUENCY (MHz) Figure 20. Third Order Output Intercept Point (Two--Tone) versus Frequency MML20211HT1 10 RF Device Data Freescale Semiconductor 50 OHM APPLICATION CIRCUIT: 2700 MHz VDD R3 C4 C8 C7 R2 RF INPUT Z1 Z5 Z2 1 C1 C3 8 N.C. L2 C9 7 2 Z3 L1 RF OUTPUT Z4 C2 3 6 BIAS CIRCUIT C5 4 Z1 Z2 Z3 0.150 x 0.021 Microstrip 0.044 x 0.011 Microstrip 0.020 x 0.031 Microstrip Z4 Z5 5 N.C. 0.038 x 0.021 Microstrip 0.021 x 0.080 Microstrip Figure 21. MML20211HT1 Test Circuit Schematic Table 10. MML20211HT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C5 8.2 pF Chip Capacitors GJM1555C1H8R2CB01 Murata C2, C3, C7 8.2 pF Chip Capacitors GRM1555C1H8R2DA01 Murata C4, C8 0.1 F Chip Capacitors GRM155R61A104KA01D Murata C6 Component Not Placed C9 0.8 pF Chip Capacitor GJM1555C1HR80BB01D Murata L1, L2 2.2 nH Chip Inductors 0402CS--2N2 Coilcraft R1 Component Not Placed R2 0 , 1 A Chip Resistor ERJ2GE0R00X Panasonic R3 1.5 k, 1/16 W Chip Resistor RC0402FR--071K5L Yageo PCB 0.010, r = 3.38, Multilayer IS680--3.38 Isola Note: Component numbers C6 and R1 are labeled on board but not placed. MML20211HT1 RF Device Data Freescale Semiconductor 11 50 OHM APPLICATION CIRCUIT: 2700 MHz VDD 5 V C4 Via A R3 RFIN RFOUT C9 C3 C1 L2 L1 C6* C5 C2 R2 R1* C7 C8 DFN 2x2--8C Rev. 0 Via A Note: Component numbers C6* and R1* are labeled on board but not placed. NOTE: To achieve optimal noise performance, it is critical that proper biasing, input matching, supply decoupling and grounding are employed. Figure 22. MML20211HT1 Test Circuit Component Layout Table 10. MML20211HT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C5 8.2 pF Chip Capacitors GJM1555C1H8R2CB01 Murata C2, C3, C7 8.2 pF Chip Capacitors GRM1555C1H8R2DA01 Murata C4, C8 0.1 F Chip Capacitors GRM155R61A104KA01D Murata C6 Component Not Placed C9 0.8 pF Chip Capacitor GJM1555C1HR80BB01D Murata L1, L2 2.2 nH Chip Inductors 0402CS--2N2 Coilcraft R1 Component Not Placed R2 0 , 1 A Chip Resistor ERJ2GE0R00X Panasonic R3 1.5 k, 1/16 W Chip Resistor RC0402FR--071K5L Yageo PCB 0.010, r = 3.38, Multilayer IS680--3.38 Isola (Test Circuit Component Designations and Values repeated for reference.) MML20211HT1 12 RF Device Data Freescale Semiconductor --3 --26 35 --6 --28 30 --9 --30 25 --12 --32 20 S12 (dB) S11 (dB) 50 OHM TYPICAL CHARACTERISTICS: 2700 MHz --15 --36 10 --18 --385 --21 VDD = 5 Vdc 2610 2670 2730 2790 --400 2550 2850 2610 2670 2730 2790 f, FREQUENCY (MHz) Figure 23. S11 versus Frequency Figure 24. S12 versus Frequency 21 13 20 --16 19 --19 18 --22 17 16 2850 --25 --28 15 14 2550 VDD = 5 Vdc f, FREQUENCY (MHz) S22 (dB) S21 (dB) --24 2550 --34 15 --31 VDD = 5 Vdc 2610 2670 2730 2790 2850 --34 2550 VDD = 5 Vdc 2610 2670 2730 2790 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 25. S21 versus Frequency Figure 26. S22 versus Frequency 2850 MML20211HT1 RF Device Data Freescale Semiconductor 13 1.4 NF, NOISE FIGURE (dB) 1.2 1 0.8 0.6 0.4 0.2 0 VDD = 5 Vdc 2600 2640 2680 2720 2760 f, FREQUENCY (MHz) Figure 27. Noise Figure versus Frequency 2800 OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 50 OHM TYPICAL CHARACTERISTICS: 2700 MHz 36 35 34 33 32 31 VDD = 5 Vdc 1 MHz Tone Spacing 30 29 2600 2640 2680 2720 2760 2800 f, FREQUENCY (MHz) Figure 28. Third Order Output Intercept Point (Two--Tone) versus Frequency MML20211HT1 14 RF Device Data Freescale Semiconductor 2.00 0.80 0.30 0.50 1.6 0.8 solder pad with thermal via structure. All dimensions in mm. 1.20 0.60 2.40 Figure 29. PCB Pad Layout for DFN 2 2 MB YW Figure 30. Product Marking MML20211HT1 RF Device Data Freescale Semiconductor 15 PACKAGE DIMENSIONS MML20211HT1 16 RF Device Data Freescale Semiconductor MML20211HT1 RF Device Data Freescale Semiconductor 17 MML20211HT1 18 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE Refer to the following resources to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers Software .s2p File Development Tools Printed Circuit Boards For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to Software & Tools on the part’s Product Summary page to download the respective tool. FAILURE ANALYSIS At this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis. In cases where Freescale is contractually obligated to perform failure analysis (FA) services, full FA may be performed by third party vendors with moderate success. For updates contact your local Freescale Sales Office. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Aug. 2011 Initial Release of Data Sheet 1 Sept. 2014 Table 2, Maximum Ratings: updated Junction Temperature from 150C to 175C to reflect recent test results of the device, p. 1 Table 6, ESD Protection Characteristics: removed the word “Minimum” after the ESD class rating. ESD ratings are characterized during new product development but are not 100% tested during production. ESD ratings provided in the data sheet are intended to be used as a guideline when handling ESD sensitive devices, p. 2 Revised Failure Analysis information, p. 19 MML20211HT1 RF Device Data Freescale Semiconductor 19 How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. 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Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. All other product or service names are the property of their respective owners. E 2011, 2014 Freescale Semiconductor, Inc. MML20211HT1 Document Number: MML20211H Rev. 1, 9/2014 20 RF Device Data Freescale Semiconductor