Freescale Semiconductor Technical Data Document Number: MMG20271H Rev. 0, 12/2010 Enhancement Mode pHEMT Technology (E--pHEMT) MMG20271HT1 High Linearity Amplifier The MMG20271H is a high dynamic range, low noise amplifier MMIC, housed in a QFN 3x3 standard plastic package. It is ideal for Cellular, PCS, LTE, TD--SCDMA, W--CDMA base station, wireless LAN and other systems in the 1500 to 2700 MHz frequency range. With high OIP3 and low noise figure, it can be utilized as a driver amplifier in the transmit chain and as a second stage LNA in the receive chain. 1500--2700 MHz, 16 dB 27.5 dBm E--pHEMT Features • Frequency: 1500--2700 MHz • Noise Figure: 1.7 dB @ 2140 MHz • P1dB: 27.5 dBm @ 2140 MHz • Small--Signal Gain: 16 dB @ 2140 MHz • Third Order Output Intercept Point: 42 dBm @ 2140 MHz • Single 5 Volt Supply • Supply Current: 180 mA • 50 Ohm Operation (some external matching required) • Low Cost QFN Surface Mount Package • RoHS Compliant • In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7 inch Reel. Table 1. Typical Performance (1) Table 2. Maximum Ratings Rating Symbol 1500 MHz 2140 MHz 2700 MHz Unit Noise Figure NF 2.0 1.7 1.9 dB Input Return Loss (S11) IRL --16 --14 --17 dB Output Return Loss (S22) ORL --20 --22 --17 dB Small--Signal Gain (S21) Gp 18 16 14 dB Power Output @ 1dB Compression P1db 27 27.5 28 dBm Third Order Input Intercept Point IIP3 22 26 28 dBm Third Order Output Intercept Point OIP3 40 42 42 dBm Characteristic CASE 2131--01 QFN 3x3 PLASTIC Symbol Value Unit Supply Voltage VDD 6 V Supply Current IDD 400 mA RF Input Power Pin 25 dBm Storage Temperature Range Tstg --65 to +150 °C Junction Temperature (2) TJ 150 °C 2. For reliable operation, the junction temperature should not exceed 150°C. 1. VDD = 5 Vdc, TA = 25°C, 50 ohm system, application circuit tuned for specified frequency. Table 3. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 96°C, 5 Vdc, 190 mA, no RF applied Symbol Value (3) Unit RθJC 38 °C/W 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2010. All rights reserved. RF Device Data Freescale Semiconductor MMG20271HT1 1 Table 4. Electrical Characteristics (VDD = 5 Vdc, 2140 MHz, TA = 25°C, 50 ohm system, in Freescale Application Circuit) Symbol Min Typ Max Unit Small--Signal Gain (S21) Gp 13.9 16 — dB Input Return Loss (S11) IRL — --14 — dB Output Return Loss (S22) ORL — --22 — dB Power Output @ 1dB Compression P1dB — 27.5 — dBm IIP3 — 26 — dBm Third Order Output Intercept Point OIP3 — 42 — dBm Reverse Isolation (S12) |S12| — --23 — dB NF — 1.7 — dB Supply Current (1) IDD 148 180 227 mA (1) VDD — 5 — V Characteristic Third Order Input Intercept Point Noise Figure Supply Voltage 1. For reliable operation, the junction temperature should not exceed 150°C. Table 5. Functional Pin Description Name RFin (1) Pin Number 3 Description RF input for the power amplifier. RFin has an RF choke to ground internal to the package. No external blocking is necessary unless externally applied DC is present on the trace. RFout/ VDD 8, 9 RF output for the power amplifier. This pin is DC coupled and requires a DC blocking capacitor. VBA 12 Bias voltage and current adjust pin. GND Backside Center Metal The center metal base of the QFN package provides both DC and RF ground as well as the heat sink contact for the IC. 1. The RF input has a DC path to ground and therefore may require an external decoupling capacitor. VBA N.C. N.C. 12 N.C. 1 N.C. 2 RFin 3 11 10 GND 9 RFout/VDD 8 RFout/VDD 7 N.C. 4 5 6 N.C. N.C. N.C. (Top View) Figure 1. Pin Connections Table 6. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD 22--A114) 1B (Minimum) Machine Model (per EIA/JESD 22--A115) A (Minimum) Charge Device Model (per JESD 22--C101) IV (Minimum) Table 7. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 1 260 °C MMG20271HT1 2 RF Device Data Freescale Semiconductor 50 OHM APPLICATION CIRCUIT: 2140 MHz R2 VSUPPLY R1 C7 12 1 RF INPUT Z1 Z2 11 10 C3 L2 9 BIAS CIRCUIT Z3 2 8 3 7 C5 L1 RF OUTPUT Z4 C6 C2 C1 4 Z1 Z2 5 0.139″ x 0.021″ Microstrip 0.026″ x 0.011″ Microstrip 6 Z3 Z4 0.041″ x 0.030″ Microstrip 0.198″ x 0.021″ Microstrip Figure 2. MMG20271HT1 Test Circuit Schematic Table 8. MMG20271HT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 1.8 pF Chip Capicitor GJM1555C1H1R8BB01D Murata C2, C3, C7 18 pF Chip Capacitors GJM1555C1H180GB01D Murata C4 Component Not Used C5 0.1 μF Chip Capacitor GRM155R61A104K01D Murata C6 1.5 pF Chip Capacitor GJM1555C1H1R5BB01D Murata L1, R2 (1) 0 Ω, 1 A Chip Resistor ERJ2GE0R00X Panasonic L2 23 nH Chip Inductor 0402CS--23NXGL Coilcraft R1 220 Ω, 1/16 W Chip Resistor RC0402FR--07220RL Yageo PCB 0.010″, εr = 3.38, Multilayer IS680--338 Isola 1. Location L1 can be an inductor, resistor or jumper depending on frequency. MMG20271HT1 RF Device Data Freescale Semiconductor 3 50 OHM APPLICATION CIRCUIT: 2140 MHz VDD 5 V VBA R2 C5 C4* R1 RFIN C3 C7 L2 C1 C6 L1 C2 RFOUT QFN 3x3--12A Rev. 0 *C4 component not used. Figure 3. MMG20271HT1 Test Circuit Component Layout Table 8. MMG20271HT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 1.8 pF Chip Capicitor GJM1555C1H1R8BB01D Murata C2, C3, C7 18 pF Chip Capacitors GJM1555C1H180GB01D Murata C4 Component Not Used C5 0.1 μF Chip Capacitor GRM155R61A104K01D Murata C6 1.5 pF Chip Capacitor GJM1555C1H1R5BB01D Murata L1, R2 (1) 0 Ω, 1 A Chip Resistor ERJ2GE0R00X Panasonic L2 23 nH Chip Inductor 0402CS--23NXGL Coilcraft R1 220 Ω, 1/16 W Chip Resistor RC0402FR--07220RL Yageo PCB 0.010″, εr = 3.38, Multilayer IS680--338 Isola 1. Location L1 can be an inductor, resistor or jumper depending on frequency. (Component Designations and Values table repeated for reference.) MMG20271HT1 4 RF Device Data Freescale Semiconductor 50 OHM TYPICAL CHARACTERISTICS: 2140 MHz --13 17 IRL, INPUT RETURN LOSS (dB) Gp, SMALL--SIGNAL GAIN (dB) 18 TC = --40°C 25°C 16 85°C 15 VDD = 5 Vdc 14 2000 2075 2150 2225 --15 85°C 25°C --16 VDD = 5 Vdc 2075 2150 2225 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 4. Small--Signal Gain (S21) versus Frequency Figure 5. Input Return Loss (S11) versus Frequency TC = 85°C --20 25°C --22 --40°C --24 2000 VDD = 5 Vdc 2075 2150 2225 P1dB, 1 dB COMPRESSION POINT (dBm) --18 TC = --40°C 28 25°C 27 85°C 26 VDD = 5 Vdc 25 2040 2300 2090 2140 2190 2240 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 6. Output Return Loss (S22) versus Frequency Figure 7. P1dB versus Frequency 45 2.4 TC = 85°C TC = --40°C 43 25°C 41 85°C 39 1.8 25°C 1.2 --40°C 0.6 VDD = 5 Vdc 37 2040 2300 29 NF, NOISE FIGURE (dB) ORL, OUTPUT RETURN LOSS (dB) TC = --40°C --17 2000 2300 --16 OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) --14 2090 2140 2190 2240 VDD = 5 Vdc 0 2000 2075 2150 2225 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 8. Third Order Output Intercept Point versus Frequency Figure 9. Noise Figure versus Frequency 2300 MMG20271HT1 RF Device Data Freescale Semiconductor 5 ACPR, ADJACENT CHANNEL POWER RATIO (dBc) 50 OHM TYPICAL CHARACTERISTICS: 2140 MHz --20 --30 VDD = 5 Vdc, f = 2140 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF) --40 TC = 85°C --40°C --50 25°C --60 16 18 20 22 24 Pout, OUTPUT POWER (dBm) Figure 10. Single--Carrier W--CDMA Adjacent Channel Power Ratio versus Output Power MMG20271HT1 6 RF Device Data Freescale Semiconductor 50 OHM APPLICATION CIRCUIT: 1900 MHz R2 VSUPPLY R1 C7 12 1 RF INPUT Z1 Z2 11 10 C3 L2 9 BIAS CIRCUIT Z3 2 8 3 7 C5 L1 RF OUTPUT Z4 C6 C2 C1 4 Z1 Z2 5 0.166″ x 0.021″ Microstrip 0.026″ x 0.011″ Microstrip 6 Z3 Z4 0.041″ x 0.030″ Microstrip 0.175″ x 0.021″ Microstrip Figure 11. MMG20271HT1 Test Circuit Schematic Table 9. MMG20271HT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C6 1.6 pF Chip Capicitors GJM1555C1H1R6BB01D Murata C2, C3, C7 18 pF Chip Capacitors GJM1555C1H180GB01D Murata C4 Component Not Used C5 0.1 μF Chip Capacitor GRM155R61A104K01D Murata L1 1 nH Chip Inductor 0402CS--1N0XGL Coilcraft L2 23 nH Chip Inductor 0402CS--23NXGL Coilcraft R1 220 Ω, 1/16 W Chip Resistor RC0402FR--07220RL Yageo R2 0 Ω, 1 A Chip Resistor ERJ2GE0R00X Panasonic PCB 0.010″, εr = 3.38, Multilayer IS680--338 Isola MMG20271HT1 RF Device Data Freescale Semiconductor 7 50 OHM APPLICATION CIRCUIT: 1900 MHz VDD 5 V VBA R2 C5 C4* R1 RFIN C3 C7 L2 C1 C6 L1 C2 RFOUT QFN 3x3--12A Rev. 0 *C4 component not used. Figure 12. MMG20271HT1 Test Circuit Component Layout Table 9. MMG20271HT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C6 1.6 pF Chip Capicitors GJM1555C1H1R6BB01D Murata C2, C3, C7 18 pF Chip Capacitors GJM1555C1H180GB01D Murata C4 Component Not Used C5 0.1 μF Chip Capacitor GRM155R61A104K01D Murata L1 1 nH Chip Inductor 0402CS--1N0XGL Coilcraft L2 23 nH Chip Inductor 0402CS--23NXGL Coilcraft R1 220 Ω, 1/16 W Chip Resistor RC0402FR--07220RL Yageo R2 0 Ω, 1 A Chip Resistor ERJ2GE0R00X Panasonic PCB 0.010″, εr = 3.38, Multilayer IS680--338 Isola (Component Designations and Values table repeated for reference.) MMG20271HT1 8 RF Device Data Freescale Semiconductor 50 OHM TYPICAL CHARACTERISTICS: 1900 MHz --5 IRL, INPUT RETURN LOSS (dB) Gp, SMALL--SIGNAL GAIN (dB) 19 18 17 16 VDD = 5 Vdc 15 1750 1825 1900 1975 --20 VDD = 5 Vdc 1900 1975 f, FREQUENCY (MHz) Figure 13. Small--Signal Gain (S21) versus Frequency Figure 14. Input Return Loss (S11) versus Frequency 2050 P1dB, 1 dB COMPRESSION POINT (dBm) 29 --10 --20 --30 VDD = 5 Vdc 1825 1900 1975 28 27 26 VDD = 5 Vdc 25 1800 2050 1850 1900 1950 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 15. Output Return Loss (S22) versus Frequency Figure 16. P1dB versus Frequency 45 2.4 43 2.2 41 39 VDD = 5 Vdc 1 MHz Tone Spacing 37 1800 1825 f, FREQUENCY (MHz) NF, NOISE FIGURE (dB) ORL, OUTPUT RETURN LOSS (dB) OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) --15 --25 1750 2050 0 --40 1750 --10 1850 1900 1950 2000 2 1.8 VDD = 5 Vdc 2000 1.6 1750 1825 1900 1975 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 17. Third Order Output Intercept Point versus Frequency Figure 18. Noise Figure versus Frequency 2050 MMG20271HT1 RF Device Data Freescale Semiconductor 9 50 OHM APPLICATION CIRCUIT: 2700 MHz R2 VSUPPLY R1 C7 12 1 RF INPUT Z1 Z2 11 10 C3 L2 9 BIAS CIRCUIT Z3 2 8 3 7 C5 L1 RF OUTPUT Z4 C6 C2 C1 4 Z1 Z2 5 0.056″ x 0.021″ Microstrip 0.026″ x 0.011″ Microstrip 6 Z3 Z4 0.041″ x 0.030″ Microstrip 0.091″ x 0.021″ Microstrip Figure 19. MMG20271HT1 Test Circuit Schematic Table 10. MMG20271HT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 1.8 pF Chip Capicitor GJM1555C1H1R8BB01D Murata C2, C3, C7 18 pF Chip Capacitors GJM1555C1H180GB01D Murata C4 Component Not Used C5 0.1 μF Chip Capacitor GRM155R61A104K01D Murata C6 1.5 pF Chip Capacitor GJM1555C1H1R5BB01D Murata L1, R2 (1) 0 Ω, 1 A Chip Resistor ERJ2GE0R00X Panasonic L2 23 nH Chip Inductor 0402CS--23NXGL Coilcraft R1 220 Ω, 1/16 W Chip Resistor RC0402FR--07220RL Yageo PCB 0.010″, εr = 3.38, Multilayer IS680--338 Isola 1. Location L1 can be an inductor, resistor or jumper depending on frequency. MMG20271HT1 10 RF Device Data Freescale Semiconductor 50 OHM APPLICATION CIRCUIT: 2700 MHz VDD 5 V VBA R2 C5 C4* R1 RFIN C3 C7 L2 C1 C6 L1 C2 RFOUT QFN 3x3--12A Rev. 0 *C4 component not used. Figure 20. MMG20271HT1 Test Circuit Component Layout Table 10. MMG20271HT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 1.8 pF Chip Capicitor GJM1555C1H1R8BB01D Murata C2, C3, C7 18 pF Chip Capacitors GJM1555C1H180GB01D Murata C4 Component Not Used C5 0.1 μF Chip Capacitor GRM155R61A104K01D Murata C6 1.5 pF Chip Capacitor GJM1555C1H1R5BB01D Murata L1, R2 (1) 0 Ω, 1 A Chip Resistor ERJ2GE0R00X Panasonic L2 23 nH Chip Inductor 0402CS--23NXGL Coilcraft R1 220 Ω, 1/16 W Chip Resistor RC0402FR--07220RL Yageo PCB 0.010″, εr = 3.38, Multilayer IS680--338 Isola 1. Location L1 can be an inductor, resistor or jumper depending on frequency. (Component Designations and Values table repeated for reference.) MMG20271HT1 RF Device Data Freescale Semiconductor 11 50 OHM TYPICAL CHARACTERISTICS: 2700 MHz --5 IRL, INPUT RETURN LOSS (dB) Gp, SMALL--SIGNAL GAIN (dB) 16 15 14 13 VDD = 5 Vdc 12 2550 2625 2700 2775 --20 VDD = 5 Vdc 2625 2700 2775 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 21. Small--Signal Gain (S21) versus Frequency Figure 22. Input Return Loss (S11) versus Frequency 2850 29 P1dB, 1 dB COMPRESSION POINT (dBm) ORL, OUTPUT RETURN LOSS (dB) --15 --25 2550 2850 --5 --10 --15 --20 VDD = 5 Vdc --25 2550 2625 2700 2775 28 27 26 VDD = 5 Vdc 25 2600 2850 2650 2700 2750 2800 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 23. Output Return Loss (S22) versus Frequency Figure 24. P1dB versus Frequency 45 2.2 43 2 NF, NOISE FIGURE (dB) OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) --10 41 39 1.8 1.6 VDD = 5 Vdc 1 MHz Tone Spacing 37 2600 2650 2700 2750 VDD = 5 Vdc 2800 1.4 2550 2625 2700 2775 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 25. Third Order Output Intercept Point versus Frequency Figure 26. Noise Figure versus Frequency 2850 MMG20271HT1 12 RF Device Data Freescale Semiconductor 3.00 0.70 0.30 2.00 3.40 0.50 1.6 x 1.6 Solder Pad with Thermal Via Structure Figure 27. PCB Pad Layout for QFN 3x3 MG01 YWZ Figure 28. Product Marking MMG20271HT1 RF Device Data Freescale Semiconductor 13 PACKAGE DIMENSIONS MMG20271HT1 14 RF Device Data Freescale Semiconductor MMG20271HT1 RF Device Data Freescale Semiconductor 15 MMG20271HT1 16 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE Refer to the following documents, tools and software to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Software • .s2p File Development Tools • Printed Circuit Boards For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. FAILURE ANALYSIS At this time failure analysis is limited to electrical signature analysis. For updates contact your local Freescale Sales Office. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Dec. 2010 Description • Initial Release of Data Sheet MMG20271HT1 RF Device Data Freescale Semiconductor 17 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2010. All rights reserved. MMG20271HT1 Document Number: MMG20271H Rev. 0, 12/2010 18 RF Device Data Freescale Semiconductor