Data Sheet

Freescale Semiconductor
Data Sheet: Advance Information
Document Number: MC13850
Rev. 1, 12/2010
MC13850
Package Information
Plastic Package: MLPD-8
2.0 x 2.0 x 0.6 mm
Case: 2128-01
MC13850
Low Noise Amplifier with Bypass
Switch
1
Introduction
The MC13850 is a cost-effective, high IP3 LNA with low
noise figure. This is the leadless package version of the
MBC13720 device. As with the MBC13720, this device
is designed for general purpose RF applications, yet has
excellent high frequency gain and noise figure. An
integrated bypass switch is included to preserve high
input intercept performance. The input and output match
are external to allow maximum design flexibility. The
LNA has two selectable IP3 modes, a bypass mode and a
standby mode. The MC13850 is fabricated with an
advanced RF BiCMOS process using the SiGe:C module
and is packaged in the MLPD-8 leadless package.
1.1
•
•
•
Ordering Information
Device
Device Marking
Package
MC13850EP
850
MLPD-8
Contents:
1
2
3
4
5
6
7
8
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Electrical Specifications . . . . . . . . . . . . . . . . . . .3
Scattering and Noise Parameters . . . . . . . . . . . .8
Application Information . . . . . . . . . . . . . . . . . . .34
Printed Circuit Board and Bill of Materials . . .46
Packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .52
Product Documentation . . . . . . . . . . . . . . . . . . .53
Revision History . . . . . . . . . . . . . . . . . . . . . . . . .53
Features
RF input frequency: 400 MHz to 2500 MHz
Gain: 21 dB at 470 MHz, 14.5 dB at 1960 MHz
and 12 dB at 2.4 GHz in high IP3 mode
Input third order intercept point (IIP3): 10 dBm
at 1960 MHz, 13 dBm at 2.4 GHz, and -2.5 dBm
at 860 MHz in high IP3 mode
This document contains information on a new product. Specifications and information herein are subject to change without notice.
© Freescale Semiconductor, Inc., 2006–2010. All rights reserved.
Introduction
•
•
•
•
•
•
•
•
•
•
•
•
•
Noise Figure (NF): 1.6 dB at 860 MHz, 1.4 dB at 1960 MHz, and 1.55 dB at 2400 MHz in low IP3
mode
Output 1 dB compression point (P1dB): 9 dBm at 470 MHz and 11.5 dBm at 1060 MHz in high
IP3 mode
Selectable IP3 mode allows for running at the desired IP3 performance for a receiver's linearity
requirements
Bypass mode has return losses comparable to active mode, for use in systems with filters and
duplexers
Bypass mode improves dynamic range in variable signal strength environments
Integrated logic-controlled standby mode with current drain < 1µA
Total supply current: 5 mA at 2.7 V in low IP3 mode and 10 mA in high IP3 mode. Bypass mode
<10 µA
In a receiver system with 20% active mode and 80% bypass mode, the average current drain is
1 mA
On-chip bias sets the bias point
Bias stabilized for device and temperature variations
MLPD-8 leadless package with low parasitics
470-860, 900, 1960, and 2400 MHz application circuit evaluation boards with characterization data
are available
Available in tape and reel packaging
Figure 1 shows a simplified block diagram of the MC13850 with the pinouts and location of the Pin 1
designator on the package.
Enable1
8
Gnd
Enable2
Vc c
6
5
7
Gain
Logic
Enable
Pin 1 Designator
on Package
1
3
2
4
NC
RF IN
RF OUT
Gnd
.
Figure 1. Simplified Block Diagram
MC13850 Advance Information, Rev. 1
2
Freescale Semiconductor
Electrical Specifications
1.2
Applications
Ideal for use in any RF product that operates between 400 MHz and 2.5 GHz, and may be applied in:
• Buffer amplifiers
• Mixers
• IF amplifiers
• Voltage controlled oscillators (VCOs)
• Use with transceivers requiring external LNAs
• ISM
• Mobile—Cellular front end LNA, GPS, two-way radios
• Consumer—WLAN, 802.11 b/g
• Auto—RKE, TPMS, GPS, active antenna, wireless security
2
Electrical Specifications
This section contains electrical characteristics of the device as well as maximum ratings and recommended
operating conditions. Table 1 lists the maximum ratings for the device.
Table 1. Maximum Ratings1 (TA=25°C, unless otherwise noted)
Ratings
Symbol
Value
Unit
Supply Voltage
VCC
3.3
Vdc
Storage Temperature Range
Tstg
-65 to 150
°C
Operating Ambient Temperature Range
TA
-40 to 85
°C
RF Input Power
Prf
10
dBm
Power Dissipation
Pdis
100
mW
RthetaJC
400
°C/W
Thermal Resistance, Junction to Case
1 Maximum Ratings are those values beyond which damage to the device may occur. Functional operation must be restricted to the limits in the Recommended
Operating Conditions and Electrical Characteristics tables.
Table 2 lists the recommended operating conditions of the device.
Table 2. Recommended Operating Conditions
Characteristic
Symbol
Min
Typ
Max
Unit
RF Frequency
fRF
400
—
2500
MHz
Supply Voltage
VCC
2.3
—
3.0
Vdc
Logic Voltage
Input High Voltage
Input Low Voltage
—
VCC
1.5
0
—
—
VCC
0.95
Vdc
Table 3 lists the four modes of operation for the device that result from changing the voltage applied to the
enable 1 (EN1) and enable 2 (EN2) pins.
MC13850 Advance Information, Rev. 1
Freescale Semiconductor
3
Electrical Specifications
Table 3. Truth Table
EN1
EN2
State
Current Consumption
Low
Low
Standby
< 10 μA
Low
High
Bypass
< 10 μA
High
Low
High IP3
9.9 mA
High
High
Low IP3
4.7 mA
Table 4 lists the electrical characteristics measured on evaluation boards tuned for typical application
frequencies. Further details on the application circuits are shown in Section 4, “Application Information”
and details on the boards are shown in Section 5, “Printed Circuit Board and Bill of Materials.”
Table 4. Electrical Characteristics Measured in Frequency Specific Tuned Circuits
(Vcc = 2.7V, TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Low IP3
—
4.7
5.7
mA
High IP3
—
9.9
12.5
mA
Bypass
—
2
10
uA
Low IP3
20.5
21.6
—
High IP3
23.4
24.4
—
Bypass
-7.4
-6.9
—
Low IP3
—
1.32
1.6
High IP3
—
1.33
1.6
Bypass
—
9.5
10
Low IP3
-12.5
-11.2
—
High IP3
-9.2
-8
—
Bypass
26.7
27.7
—
Low IP3
6
7
—
High IP3
8.6
9.6
—
470 MHz (refer to Figure 14)
Supply Current
Icc
RF Gain
G
dB
Noise Figure
NF
dB
Input IP3
IIP3
dBm
Power Output at 1.0 dB Gain Compression
P1dBoutput
dBm
MC13850 Advance Information, Rev. 1
4
Freescale Semiconductor
Electrical Specifications
Table 4. Electrical Characteristics Measured in Frequency Specific Tuned Circuits (continued)
(Vcc = 2.7V, TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Low IP3
20.5
21.5
—
High IP3
23.1
24.1
—
Bypass
-7.7
-6.7
—
Low IP3
16.4
17.4
—
High IP3
18
19
—
Bypass
-6.7
-6.2
—
Low IP3
—
1.22
1.5
High IP3
—
1.32
1.6
Bypass
—
5.2
5.7
Low IP3
-5.3
-4
—
High IP3
-2.3
-1.1
—
Bypass
23.7
24.7
—
Low IP3
7.4
8.4
—
High IP3
8.1
9.2
—
Low IP3
17
18
—
High IP3
18.4
19.4
—
Bypass
-6.8
-5.8
—
Low IP3
20
21
—
High IP3
20.8
21.8
—
Bypass
-4.5
-3.7
—
Gain
Unit
S21
dB
860 MHz (refer to Figure 14)
RF Gain
G
dB
Noise Figure
NF
dB
Input IP3
IIP3
dBm
Power Output at 1.0 dB Gain Compression
Gain
P1dBoutput
dBm
S21
dB
900 MHz (refer to Figure 15)
RF Gain
G
dB
MC13850 Advance Information, Rev. 1
Freescale Semiconductor
5
Electrical Specifications
Table 4. Electrical Characteristics Measured in Frequency Specific Tuned Circuits (continued)
(Vcc = 2.7V, TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Low IP3
—
1.38
1.6
High IP3
—
1.53
1.75
Bypass
—
3.85
4.6
Low IP3
-6.5
-4.1
—
High IP3
1.75
3.5
—
Bypass
27
27.6
—
Low IP3
10.9
11.9
—
High IP3
11.1
12.1
—
Low IP3
20.1
21.1
—
High IP3
20.8
21.8
—
Bypass
-4.5
-3.5
—
Low IP3
15.5
16.5
—
High IP3
16.1
17.1
—
Bypass
-5.2
-4.2
—
Low IP3
—
1.43
1.65
High IP3
—
1.55
1.75
Bypass
—
4.6
5.8
Low IP3
-6
-2.9
—
High IP3
6
8
—
Bypass
26.2
27.7
—
Low IP3
8
12
—
High IP3
11.5
13.5
—
Noise Figure
Unit
NF
dB
Input IP3
IIP3
dBm
Power Output at 1.0 dB Gain Compression
Gain
P1dBoutput
dBm
S21
dB
900 MHz High IP3 (refer to Figure 16)
RF Gain
G
dB
Noise Figure
NF
dB
Input IP3
IIP3
dBm
Power Output at 1.0 dB Gain Compression
P1dBoutput
dBm
MC13850 Advance Information, Rev. 1
6
Freescale Semiconductor
Electrical Specifications
Table 4. Electrical Characteristics Measured in Frequency Specific Tuned Circuits (continued)
(Vcc = 2.7V, TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Low IP3
15.7
16.7
—
High IP3
16.2
17.2
—
Bypass
-4.7
-3.9
—
Low IP3
13.8
14.8
—
High IP3
13.9
14.9
—
Bypass
-4.8
-3.5
—
Low IP3
—
1.5
1.8
High IP3
—
1.75
2
Bypass
—
3.2
4.4
Low IP3
3.5
6.5
—
High IP3
8
9.6
—
Bypass
22.6
23.6
—
Low IP3
1.5
3.2
—
High IP3
2.3
4
—
Low IP3
14
15
—
High IP3
14
15
—
Bypass
-4.8
-3.6
—
Low IP3
11.5
12.5
—
High IP3
12
13
—
Bypass
-4
-3
—
Gain
Unit
S21
dB
1960 MHz (refer to Figure 17)
RF Gain
G
dB
Noise Figure
NF
dB
Input IP3
IIP3
dBm
Power Output at 1.0 dB Gain Compression
Gain
P1dBoutput
dBm
S21
dB
2400 MHz (refer to Figure 18)
RF Gain
G
dB
MC13850 Advance Information, Rev. 1
Freescale Semiconductor
7
Scattering and Noise Parameters
Table 4. Electrical Characteristics Measured in Frequency Specific Tuned Circuits (continued)
(Vcc = 2.7V, TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Low IP3
—
1.6
1.95
High IP3
—
1.85
2.2
Bypass
—
3.2
4.3
Noise Figure
Unit
NF
dB
Input IP3
IIP3
Low IP3
7
10
—
High IP3
11
12.5
—
Bypass
26
27.2
—
Power Output at 1.0 dB Gain Compression
P1dBoutput
dBm
Low IP3
-1
1
—
High IP3
0
2.2
—
Gain
3
dBm
S21
dB
Low IP3
11.6
12.6
—
High IP3
12
13
—
Bypass
-3.7
-3.2
—
Scattering and Noise Parameters
Table 5 through Table 14 list the S parameters for the packaged part in a 50 Ω system for each of the four
modes of operation and over temperature.
Table 5. Low IP3 Mode 25 °C Scattering Parameters
(Vcc = 2.7V, Enable 1 = High, Enable 2 = High, 50 Ω System)
S11
S21
S12
S22
f (MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
300
0.767
-16.4
12.078
163.6
0.02
68.8
0.854
1.1
350
0.754
-18.8
11.759
160.1
0.024
69
0.848
-2.6
400
0.742
-21.3
11.482
156.9
0.027
69.6
0.84
-5.6
450
0.727
-23.5
11.209
154.1
0.03
69.7
0.833
-8.5
500
0.693
-25.9
10.786
150.2
0.032
68.8
0.824
-8.9
550
0.675
-27.8
10.489
147.3
0.035
69.1
0.81
-11.1
600
0.664
-30.2
10.187
144.6
0.038
68.7
0.802
-13.1
650
0.647
-32.5
9.98
142.1
0.04
68.3
0.79
-15.3
700
0.628
-35
9.815
139.9
0.043
68.1
0.776
-17.2
MC13850 Advance Information, Rev. 1
8
Freescale Semiconductor
Scattering and Noise Parameters
Table 5. Low IP3 Mode 25 °C Scattering Parameters (continued)
(Vcc = 2.7V, Enable 1 = High, Enable 2 = High, 50 Ω System)
S11
S21
S12
S22
f (MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
750
0.61
-37.2
9.608
137.5
0.045
67.9
0.761
-19.2
800
0.592
-39.5
9.262
135.4
0.048
67.5
0.748
-20.9
850
0.585
-41.6
9.045
133.3
0.051
66.3
0.736
-23
900
0.552
-43.8
8.789
131.1
0.052
66.3
0.724
-24.4
950
0.536
-46.1
8.582
129
0.054
66.1
0.707
-26
1000
0.513
-48.1
8.347
126.8
0.057
65.5
0.694
-27.8
1050
0.494
-50.1
8.137
124.9
0.058
65.2
0.682
-29.5
1100
0.474
-51.8
7.9
122.8
0.06
64.9
0.67
-31.4
1150
0.456
-53.7
7.667
121.1
0.062
64.5
0.658
-33.2
1200
0.44
-55.9
7.464
119
0.064
64.1
0.644
-34.8
1250
0.423
-57.8
7.246
117.3
0.065
63.8
0.631
-36.3
1300
0.406
-59.5
7.069
115.6
0.067
63.2
0.617
-38.6
1350
0.386
-61.6
6.866
113.8
0.068
63
0.602
-40.3
1400
0.373
-63
6.621
112.5
0.069
62.7
0.592
-41.9
1450
0.36
-64.3
6.446
111.2
0.069
63.1
0.58
-42.9
1500
0.358
-65.9
6.283
109.6
0.071
64.6
0.575
-44.2
1550
0.354
-68.8
6.185
108.9
0.074
64.7
0.575
-47.4
1600
0.347
-71.4
5.967
106.7
0.076
63.7
0.564
-49.4
1650
0.336
-74.5
5.808
105.5
0.077
63.6
0.552
-51.4
1700
0.332
-76.5
5.647
104.1
0.078
63.4
0.539
-53.1
1750
0.324
-80
5.503
102.8
0.08
63.5
0.531
-54.6
1800
0.317
-83.4
5.38
101.4
0.082
63.6
0.529
-56.3
1850
0.301
-87.4
5.234
99.9
0.085
62.7
0.528
-58.5
1900
0.291
-88.6
5.093
98.5
0.085
61.3
0.52
-60.4
1950
0.287
-90.5
4.956
97
0.085
61.1
0.518
-62.4
2000
0.284
-92.4
4.818
95.3
0.086
61.2
0.517
-64.6
2050
0.281
-94.9
4.687
93.7
0.088
61.2
0.521
-67.1
2100
0.278
-97.4
4.512
92.1
0.09
60.1
0.518
-69.7
2150
0.274
-99.4
4.366
90.3
0.091
59.8
0.513
-72.7
2200
0.272
-103.2
4.193
89.1
0.094
58.6
0.515
-76.4
2250
0.26
-106
3.958
87.3
0.096
54.7
0.501
-79.6
MC13850 Advance Information, Rev. 1
Freescale Semiconductor
9
Scattering and Noise Parameters
Table 5. Low IP3 Mode 25 °C Scattering Parameters (continued)
(Vcc = 2.7V, Enable 1 = High, Enable 2 = High, 50 Ω System)
S11
S21
S12
S22
f (MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
2300
0.243
-106
3.781
86.9
0.091
51.6
0.472
-81.8
2350
0.235
-105.3
3.652
87.4
0.086
50.9
0.466
-82.3
2400
0.238
-101.6
3.473
86.3
0.081
51.9
0.472
-82.7
2450
0.253
-99.9
3.335
86
0.079
54.5
0.478
-86.3
2500
0.273
-101
3.158
86.8
0.077
56.8
0.455
-90.7
2550
0.294
-104.9
3.1
88.9
0.078
60
0.414
-91.5
2600
0.3
-110
3.146
89.2
0.082
61.3
0.391
-88.3
Table 6. Low IP3 Mode 85°C Scattering Parameters
(Vcc = 2.7V, Enable 1 = High, Enable 2 = High, 50 Ω system)
S11
S21
S12
S22
f (MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
300
0.763
-17
12.148
163.4
0.02
67.8
0.851
0.9
350
0.75
-19.3
11.83
159.9
0.024
68.5
0.847
-2.9
400
0.737
-21.8
11.54
156.6
0.026
69.1
0.837
-5.9
450
0.723
-24.1
11.255
153.8
0.029
69.4
0.831
-8.8
500
0.691
-26.5
10.828
149.9
0.032
68.4
0.823
-9.1
550
0.674
-28.6
10.552
147.1
0.035
68.6
0.81
-11.5
600
0.662
-31.1
10.271
144.3
0.038
68
0.801
-13.5
650
0.643
-33.6
10.062
141.7
0.04
67.4
0.788
-15.8
700
0.625
-36
9.866
139.6
0.043
67.6
0.775
-17.5
750
0.604
-38.8
9.712
136.9
0.046
66.5
0.76
-20
800
0.581
-41.1
9.347
134.5
0.048
65.7
0.743
-21.8
850
0.569
-43.1
9.113
132.4
0.05
65
0.727
-23.7
900
0.535
-45.2
8.821
130.2
0.051
64.9
0.714
-24.9
950
0.519
-47.2
8.576
128.2
0.053
64.7
0.697
-26.4
1000
0.497
-48.9
8.33
126.1
0.055
64.5
0.683
-27.9
1050
0.48
-50.7
8.108
124.3
0.057
64.2
0.673
-29.7
1100
0.464
-52
7.873
122.4
0.058
64
0.66
-31.4
1150
0.449
-53.8
7.655
120.9
0.06
64.1
0.648
-32.9
MC13850 Advance Information, Rev. 1
10
Freescale Semiconductor
Scattering and Noise Parameters
Table 6. Low IP3 Mode 85°C Scattering Parameters (continued)
(Vcc = 2.7V, Enable 1 = High, Enable 2 = High, 50 Ω system)
S11
S21
S12
S22
f (MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
1200
0.436
-56.2
7.47
118.8
0.062
64.2
0.637
-34.3
1250
0.421
-58.3
7.268
117.1
0.064
63.9
0.627
-36
1300
0.404
-60
7.085
115.3
0.065
63.7
0.613
-38.2
1350
0.387
-62.5
6.899
113.5
0.067
63.7
0.601
-40.2
1400
0.376
-64.4
6.674
112.2
0.068
63.4
0.594
-41.8
1450
0.363
-67
6.507
110.6
0.069
63.6
0.583
-43.6
1500
0.354
-69.3
6.324
108.7
0.071
63.5
0.569
-45.4
1550
0.344
-71.8
6.18
107.9
0.073
63.5
0.563
-48.2
1600
0.335
-73.6
5.948
106
0.074
63.3
0.553
-49.6
1650
0.325
-76.5
5.79
104.8
0.076
62.8
0.542
-51.6
1700
0.322
-78.2
5.62
103.5
0.076
62.2
0.53
-53
1750
0.313
-81.3
5.477
102.4
0.077
62.7
0.522
-54.5
1800
0.304
-84.3
5.349
101.1
0.079
63.1
0.52
-56.2
1850
0.295
-87.2
5.22
99.7
0.08
63
0.521
-57.6
1900
0.286
-89.3
5.09
98.2
0.082
62.6
0.521
-59.6
1950
0.283
-91.5
4.956
96.8
0.083
62.3
0.521
-61.6
2000
0.281
-93.6
4.819
94.9
0.084
61.9
0.52
-64.4
2050
0.275
-95.7
4.674
93.4
0.085
61.9
0.525
-67
2100
0.276
-97.8
4.502
91.8
0.087
61.9
0.525
-69.5
2150
0.275
-99.8
4.357
90.1
0.089
61.9
0.521
-72.6
2200
0.271
-103.5
4.183
89
0.093
59.9
0.519
-76.7
2250
0.262
-104.8
3.972
87.5
0.093
56.3
0.504
-79
2300
0.252
-104.7
3.826
86.8
0.089
54.6
0.489
-80.9
2350
0.248
-105.4
3.686
86.8
0.087
54.2
0.487
-82.9
2400
0.248
-104.3
3.482
85.3
0.084
53.6
0.485
-84.8
2450
0.254
-102.5
3.322
85.4
0.08
54.5
0.482
-88.1
2500
0.272
-102.8
3.152
86.7
0.077
57.3
0.456
-92
2550
0.289
-106.1
3.111
88.9
0.078
60.8
0.414
-91.9
2600
0.295
-110.5
3.163
89
0.082
62.3
0.398
-88.5
MC13850 Advance Information, Rev. 1
Freescale Semiconductor
11
Scattering and Noise Parameters
Table 7. Low IP3 Mode -40°C Scattering Parameters
(Vcc = 2.7V, Enable 1 = High, Enable 2 = High, 50 Ω System)
S11
S21
S12
S22
f (MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
300
0.77
-15.7
11.982
163.5
0.02
69.3
0.858
1.4
350
0.759
-17.9
11.655
160.3
0.024
69.8
0.855
-2.3
400
0.747
-20.2
11.369
157.2
0.027
70.6
0.849
-5.2
450
0.733
-22.4
11.081
154.5
0.03
70.4
0.841
-8
500
0.701
-24.5
10.651
150.7
0.032
69.5
0.83
-8.4
550
0.684
-26.4
10.36
147.9
0.035
69.7
0.818
-10.7
600
0.674
-28.7
10.084
145.3
0.038
69.1
0.814
-12.6
650
0.658
-31
9.895
142.9
0.041
68.5
0.802
-14.9
700
0.64
-33.4
9.744
140.8
0.043
68.3
0.785
-16.9
750
0.621
-35.7
9.57
138.4
0.046
67.6
0.77
-19.3
800
0.602
-38
9.225
136.3
0.049
67.1
0.761
-21
850
0.596
-40
9.013
134.2
0.051
65.9
0.747
-23
900
0.56
-42.2
8.75
132
0.053
65.8
0.732
-24.5
950
0.543
-44.2
8.538
130
0.055
65.3
0.715
-26.3
1000
0.52
-46.1
8.314
127.8
0.057
64.8
0.703
-28
1050
0.5
-47.8
8.1
125.9
0.059
64.3
0.692
-29.7
1100
0.48
-48.9
7.838
123.9
0.06
63.7
0.673
-31.4
1150
0.466
-50.5
7.621
122.5
0.062
63.5
0.662
-33.2
1200
0.455
-52.5
7.445
120.6
0.064
63.8
0.654
-34.2
1250
0.439
-54.7
7.27
118.9
0.066
63.3
0.647
-36.1
1300
0.423
-56.2
7.108
117
0.068
63.1
0.632
-38.5
1350
0.403
-58.7
6.922
115.2
0.069
62.5
0.616
-40.7
1400
0.392
-60.4
6.693
113.8
0.07
62.2
0.611
-42.5
1450
0.374
-62.5
6.523
112.2
0.071
62
0.598
-43.9
1500
0.367
-63.9
6.335
110.4
0.072
62.4
0.582
-45.2
1550
0.36
-66.3
6.227
109.8
0.074
62.7
0.579
-48.4
1600
0.352
-68.3
5.993
107.7
0.076
62
0.569
-50
1650
0.338
-71.2
5.841
106.5
0.077
61.7
0.558
-51.7
1700
0.336
-72.4
5.674
105.2
0.078
61.1
0.543
-53.1
1750
0.329
-75.7
5.539
104
0.079
61.3
0.531
-54.6
1800
0.319
-79.2
5.42
102.5
0.08
61.8
0.53
-56.1
MC13850 Advance Information, Rev. 1
12
Freescale Semiconductor
Scattering and Noise Parameters
Table 7. Low IP3 Mode -40°C Scattering Parameters (continued)
(Vcc = 2.7V, Enable 1 = High, Enable 2 = High, 50 Ω System)
S11
S21
S12
S22
f (MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
1850
0.302
-82.5
5.272
101.2
0.082
62
0.536
-57.5
1900
0.293
-82.9
5.152
99.8
0.084
60.9
0.532
-59.6
1950
0.292
-85.2
5.028
98.3
0.085
60.5
0.529
-61.8
2000
0.288
-87.6
4.899
96.4
0.086
60.2
0.53
-64.6
2050
0.282
-90.1
4.763
94.7
0.087
59.7
0.534
-67.2
2100
0.278
-92.5
4.576
93
0.089
58.7
0.529
-69.7
2150
0.274
-93.5
4.434
91.3
0.089
58.7
0.519
-72.5
2200
0.275
-96.7
4.273
90.2
0.092
59
0.526
-76.1
2250
0.27
-101
4.047
88
0.097
56
0.517
-79.4
2300
0.242
-102.3
3.853
87.4
0.093
50.6
0.485
-82.2
2350
0.229
-100.3
3.704
88.5
0.086
49.1
0.47
-82.9
2400
0.235
-95.7
3.55
87.2
0.081
51
0.482
-82.4
2450
0.252
-94.7
3.43
86.4
0.079
53
0.499
-86.2
2500
0.271
-95.5
3.224
86.7
0.077
54.7
0.479
-91.1
2550
0.293
-99.2
3.108
89.1
0.077
57.8
0.43
-93.9
2600
0.302
-104.8
3.16
90.3
0.081
60.6
0.397
-91.4
Table 8. High IP3 Mode 25°C Scattering Parameters
(Vcc = 2.7V, Enable 1 = High, Enable 2 = Low, 50 Ω system)
S11
S21
S12
S22
f (MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
300
0.637
-22.9
18.316
155.3
0.018
65.4
0.771
-3
350
0.61
-26.1
17.76
150.7
0.021
66.1
0.755
-7.1
400
0.584
-29.4
17.271
146.2
0.024
66.5
0.739
-10.3
450
0.554
-32.3
16.716
142.3
0.026
66.9
0.724
-13.4
500
0.511
-34.4
15.873
137.9
0.028
67
0.707
-13.1
550
0.491
-36.7
15.221
134.7
0.03
67.1
0.688
-15.4
600
0.469
-39.2
14.597
131.8
0.032
67.4
0.674
-17.3
650
0.445
-41.6
14.055
128.9
0.034
67.7
0.657
-19.2
700
0.423
-44.1
13.507
126.4
0.036
68
0.64
-20.7
MC13850 Advance Information, Rev. 1
Freescale Semiconductor
13
Scattering and Noise Parameters
Table 8. High IP3 Mode 25°C Scattering Parameters (continued)
(Vcc = 2.7V, Enable 1 = High, Enable 2 = Low, 50 Ω system)
S11
S21
S12
S22
f (MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
750
0.401
-46.2
13.005
124
0.038
68.6
0.624
-22.5
800
0.379
-48.6
12.435
121.7
0.04
68.3
0.611
-24.1
850
0.364
-50.7
11.975
119.5
0.042
67.9
0.596
-25.8
900
0.337
-52.5
11.48
117.4
0.044
68.2
0.583
-27
950
0.322
-54.6
11.051
115.5
0.046
68.5
0.569
-28.4
1000
0.3
-56.2
10.614
113.5
0.048
68.3
0.556
-30
1050
0.284
-58.4
10.23
111.8
0.049
68.7
0.545
-31.3
1100
0.267
-59.5
9.823
110
0.051
68.4
0.533
-33.2
1150
0.252
-61.1
9.444
108.6
0.053
68.8
0.522
-34.8
1200
0.241
-63.3
9.116
107
0.054
68.9
0.511
-36.1
1250
0.228
-65.1
8.779
105.5
0.056
69
0.5
-37.2
1300
0.214
-66.5
8.481
104.1
0.057
69.1
0.487
-39.4
1350
0.201
-68.7
8.182
102.8
0.058
69.3
0.476
-41.1
1400
0.193
-70.5
7.877
101.7
0.06
69.7
0.469
-42.5
1450
0.187
-72.5
7.629
100.7
0.061
70.3
0.461
-43.2
1500
0.185
-75.2
7.399
99.5
0.063
71.5
0.457
-44.5
1550
0.185
-78.8
7.215
98.8
0.066
71.5
0.454
-47.6
1600
0.181
-82.9
7.001
97.4
0.068
71.1
0.447
-49.1
1650
0.177
-87.8
6.828
96.3
0.069
71.5
0.444
-50.5
1700
0.172
-91.9
6.647
94.7
0.072
71
0.442
-52
1750
0.163
-97.1
6.451
93.3
0.073
70.7
0.441
-54.5
1800
0.158
-101.5
6.253
91.8
0.075
70.4
0.444
-57.2
1850
0.149
-107.3
6.026
90.2
0.078
69.6
0.444
-60
1900
0.14
-108.1
5.81
89.2
0.078
68.5
0.436
-62.5
1950
0.14
-108.5
5.618
88.1
0.078
68.4
0.431
-64.9
2000
0.143
-109.4
5.437
86.9
0.079
68.5
0.431
-67.4
2050
0.146
-112.9
5.269
85.6
0.082
68.6
0.437
-69.8
2100
0.146
-115.7
5.068
84.2
0.083
67.6
0.435
-72.6
2150
0.146
-117.1
4.877
82.8
0.084
67.6
0.433
-75.8
2200
0.151
-121.7
4.675
81.5
0.088
66.5
0.438
-79.8
2250
0.145
-126.8
4.415
80.1
0.089
62.7
0.429
-83.7
MC13850 Advance Information, Rev. 1
14
Freescale Semiconductor
Scattering and Noise Parameters
Table 8. High IP3 Mode 25°C Scattering Parameters (continued)
(Vcc = 2.7V, Enable 1 = High, Enable 2 = Low, 50 Ω system)
S11
S21
S12
S22
f (MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
2300
0.125
-126.1
4.168
79.9
0.085
59.2
0.405
-86.1
2350
0.118
-119.8
3.98
80.5
0.079
59.5
0.396
-87
2400
0.127
-109.2
3.789
80.7
0.074
61.6
0.399
-88.2
2450
0.153
-105.6
3.647
81.3
0.074
65.1
0.405
-91.5
2500
0.179
-108.8
3.501
82.8
0.075
68
0.381
-95.7
2550
0.201
-114.7
3.465
84.6
0.077
70.4
0.348
-96.5
2600
0.21
-121.6
3.517
85
0.082
71
0.326
-93.7
Table 9. High IP3 Mode 85°C Scattering Parameters
(Vcc = 2.7V, Enable 1 = High, Enable 2 = Low, 50 Ω system)
S11
S21
S12
S22
f (MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
300
0.596
-25.6
19.666
153.2
0.018
64.2
0.759
-3.2
350
0.571
-28.7
18.791
148.5
0.021
65.3
0.746
-7.5
400
0.547
-32.1
17.972
144.2
0.023
66.1
0.728
-10.6
450
0.525
-34.9
17.164
140.5
0.025
66.6
0.713
-13.6
500
0.487
-37.1
16.152
136.5
0.027
66.4
0.699
-13.3
550
0.468
-39.9
15.476
133.3
0.029
66.8
0.68
-15.7
600
0.447
-42.5
14.804
130.4
0.031
67
0.665
-17.6
650
0.422
-45.2
14.209
127.4
0.033
67.3
0.648
-19.5
700
0.401
-47.9
13.626
124.9
0.035
67.7
0.631
-21
750
0.376
-50.4
13.093
122.3
0.037
67.9
0.615
-22.8
800
0.353
-52.7
12.499
119.9
0.039
68.1
0.6
-24.4
850
0.336
-55.3
12.05
117.7
0.041
68
0.586
-26
900
0.309
-57.6
11.518
115.5
0.043
67.8
0.574
-27.1
950
0.294
-59.6
11.037
113.6
0.044
67.8
0.556
-28.7
1000
0.274
-61.5
10.581
111.7
0.046
68
0.542
-30
1050
0.259
-64
10.173
110
0.047
68.1
0.531
-31.6
1100
0.242
-64.9
9.747
108.3
0.049
68.4
0.518
-33
1150
0.227
-66.4
9.357
107
0.05
69.1
0.506
-34.4
MC13850 Advance Information, Rev. 1
Freescale Semiconductor
15
Scattering and Noise Parameters
Table 9. High IP3 Mode 85°C Scattering Parameters (continued)
(Vcc = 2.7V, Enable 1 = High, Enable 2 = Low, 50 Ω system)
S11
S21
S12
S22
f (MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
1200
0.219
-68.9
9.032
105.5
0.052
69.3
0.496
-35.6
1250
0.211
-70.4
8.689
104.1
0.053
69.9
0.487
-36.7
1300
0.197
-72.7
8.384
102.7
0.055
70.1
0.475
-38.9
1350
0.186
-75
8.074
101.4
0.056
70.8
0.466
-40.3
1400
0.18
-77.9
7.786
100.3
0.058
71
0.46
-42.1
1450
0.175
-80.5
7.533
99.4
0.059
71.9
0.454
-43.1
1500
0.174
-84.7
7.301
98
0.062
72.2
0.444
-45
1550
0.17
-88.3
7.09
97.2
0.064
72.2
0.441
-47.6
1600
0.168
-91.3
6.865
96
0.066
72.3
0.439
-48.8
1650
0.171
-96.4
6.701
95
0.068
72
0.435
-50.8
1700
0.169
-100.8
6.514
93.5
0.07
71.6
0.433
-52.2
1750
0.16
-106.4
6.317
92
0.071
71.4
0.432
-54.8
1800
0.153
-111
6.098
90.6
0.073
71.3
0.433
-57.3
1850
0.149
-114.1
5.889
89.4
0.074
71
0.435
-59.6
1900
0.146
-116
5.698
88.2
0.076
70.5
0.436
-62.3
1950
0.147
-118.1
5.514
87
0.077
70.4
0.435
-64.9
2000
0.149
-120.3
5.318
85.5
0.078
70
0.436
-68.4
2050
0.148
-122.6
5.11
84.3
0.08
69.4
0.438
-71.4
2100
0.152
-123.2
4.904
83.3
0.08
69
0.431
-74
2150
0.157
-123.4
4.719
82.2
0.082
69.7
0.431
-76.9
2200
0.164
-128.7
4.526
81
0.087
68.6
0.436
-80.8
2250
0.154
-132.2
4.263
80
0.087
63.8
0.424
-85
2300
0.142
-128.4
4.036
80
0.082
61.8
0.406
-87.2
2350
0.144
-123.4
3.834
81.2
0.077
62.5
0.389
-90.3
2400
0.159
-120.9
3.742
82.7
0.074
66.1
0.369
-89.7
2450
0.17
-121.8
3.725
82.3
0.076
68.5
0.379
-89.5
2500
0.183
-122
3.582
82.3
0.077
69.4
0.372
-92.9
2550
0.199
-124.9
3.518
83.5
0.078
71.3
0.344
-93.5
2600
0.209
-129.3
3.543
83.4
0.082
72.4
0.333
-90.5
MC13850 Advance Information, Rev. 1
16
Freescale Semiconductor
Scattering and Noise Parameters
Table 10. High IP3 Mode -40°C Scattering Parameters
(Vcc = 2.7V, Enable 1 = High, Enable 2 = Low, 50 Ω system)
S11
S21
S12
S22
f (MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
300
0.779
-15.2
11.546
164.4
0.02
68.6
0.839
0.3
350
0.766
-17.4
11.388
160.9
0.023
69.2
0.832
-3.7
400
0.749
-20
11.312
157.6
0.026
69.4
0.821
-6.7
450
0.73
-22.4
11.235
154.6
0.029
69.3
0.811
-9.8
500
0.691
-24.9
11.006
150.3
0.031
68.2
0.801
-10.2
550
0.675
-26.7
10.656
147.5
0.034
68.2
0.787
-12.8
600
0.667
-28.9
10.312
144.9
0.036
67.5
0.771
-15.2
650
0.647
-31.2
10.177
142.3
0.038
67.5
0.753
-17.3
700
0.624
-34
10.129
139.8
0.04
67.6
0.735
-19
750
0.599
-36.5
10.049
137.1
0.043
67.4
0.719
-20.8
800
0.574
-39.2
9.79
134.6
0.045
67.2
0.707
-22.4
850
0.56
-41.6
9.656
132.2
0.048
66.3
0.695
-24.3
900
0.518
-44
9.455
129.7
0.05
66
0.685
-25.7
950
0.5
-46.3
9.227
127.5
0.052
65.4
0.668
-27.4
1000
0.474
-48.3
9.01
125.1
0.053
65.2
0.653
-29.1
1050
0.455
-50.4
8.778
123.1
0.055
64.7
0.643
-31.1
1100
0.437
-51.8
8.5
121.3
0.057
64.5
0.63
-33
1150
0.416
-53.8
8.276
119.6
0.058
64.2
0.618
-34.8
1200
0.397
-56.1
8.092
117.2
0.06
63.6
0.6
-36.4
1250
0.38
-57.5
7.845
115.4
0.061
64
0.586
-37.6
1300
0.361
-59.1
7.65
113.6
0.062
64
0.572
-39.7
1350
0.339
-60.9
7.422
111.9
0.063
64.5
0.561
-40.9
1400
0.325
-62.6
7.182
110.4
0.064
64.3
0.553
-42.5
1450
0.312
-63.6
7.001
109.3
0.065
65.7
0.548
-43.4
1500
0.309
-66.2
6.852
107.5
0.068
65.8
0.541
-45.4
1550
0.3
-69.3
6.724
106.7
0.071
65.2
0.534
-48.6
1600
0.294
-71.5
6.485
105
0.072
64.9
0.523
-49.5
1650
0.284
-75.1
6.35
103.7
0.074
64.8
0.516
-51.2
1700
0.279
-77.6
6.203
102.1
0.075
64.3
0.512
-52.3
1750
0.265
-81.4
6.046
100.4
0.076
64
0.509
-54.5
1800
0.251
-84.3
5.863
98.8
0.077
63.9
0.508
-56.4
MC13850 Advance Information, Rev. 1
Freescale Semiconductor
17
Scattering and Noise Parameters
Table 10. High IP3 Mode -40°C Scattering Parameters (continued)
(Vcc = 2.7V, Enable 1 = High, Enable 2 = Low, 50 Ω system)
S11
S21
S12
S22
f (MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
1850
0.237
-86.9
5.676
97.3
0.079
63.9
0.509
-58.6
1900
0.228
-87.6
5.521
96
0.08
63.4
0.508
-60.9
1950
0.226
-89.9
5.371
94.6
0.081
63.3
0.508
-63.1
2000
0.223
-92.2
5.206
92.8
0.083
62.9
0.507
-66.2
2050
0.218
-94.5
5.028
91.4
0.085
62.4
0.509
-69.4
2100
0.215
-96.4
4.845
90
0.085
61
0.504
-71.7
2150
0.214
-97
4.69
88.3
0.085
61.1
0.503
-74.8
2200
0.216
-100.2
4.493
87.1
0.088
61.8
0.509
-79.1
2250
0.209
-103.1
4.224
85.7
0.091
58.2
0.486
-83.4
2300
0.199
-101.1
4.051
85.4
0.087
55.5
0.462
-85.4
2350
0.204
-100.3
3.875
86
0.083
55.2
0.455
-88.1
2400
0.213
-100.8
3.678
86.2
0.081
55.3
0.432
-89.6
2450
0.223
-101.6
3.658
86.9
0.078
57.9
0.424
-88.8
2500
0.23
-103.6
3.531
86
0.078
58.6
0.426
-91.3
2550
0.245
-105.9
3.388
87.2
0.077
60.8
0.398
-94
2600
0.259
-111.7
3.414
88.2
0.08
63.2
0.367
-91.8
Table 11. Bypass Mode 25°C Scattering Parameters
(Vcc = 2.7V, Enable 1 = Low, Enable 2 = High, 50 Ω system)
S11
S21
S12
S22
f (MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
300
0.881
-22.3
0.315
73.1
0.312
72.8
0.868
-8
350
0.858
-25.4
0.361
68.7
0.357
68.4
0.852
-13.1
400
0.833
-28.5
0.403
64.7
0.399
64.4
0.83
-17.3
450
0.808
-31.2
0.442
61.1
0.438
60.8
0.809
-21.3
500
0.766
-34.4
0.467
56.7
0.463
56.5
0.787
-22.7
550
0.742
-37.1
0.499
53.6
0.495
53.3
0.76
-25.9
600
0.715
-39.5
0.527
50.6
0.523
50.4
0.736
-28.6
650
0.689
-41.9
0.553
47.8
0.549
47.6
0.712
-31.3
700
0.662
-44.4
0.576
45
0.571
44.9
0.687
-33.6
MC13850 Advance Information, Rev. 1
18
Freescale Semiconductor
Scattering and Noise Parameters
Table 11. Bypass Mode 25°C Scattering Parameters (continued)
(Vcc = 2.7V, Enable 1 = Low, Enable 2 = High, 50 Ω system)
S11
S21
S12
S22
f (MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
750
0.637
-46.6
0.596
42.5
0.592
42.4
0.663
-36
800
0.613
-48.7
0.614
40.1
0.61
40
0.637
-38.1
850
0.588
-51
0.632
37.9
0.625
37.4
0.615
-40.2
900
0.565
-53
0.645
35.6
0.638
35.3
0.595
-42
950
0.546
-55.2
0.657
33.6
0.649
33.3
0.572
-43.5
1000
0.523
-56.9
0.665
31.5
0.658
31.2
0.551
-44.8
1050
0.505
-58.9
0.672
29.7
0.665
29.4
0.535
-45.9
1100
0.488
-60.7
0.677
28.1
0.67
27.9
0.524
-47.2
1150
0.467
-63.1
0.684
26.5
0.677
26.3
0.515
-48.7
1200
0.442
-65.6
0.687
24.8
0.68
24.5
0.507
-50.1
1250
0.406
-67.3
0.681
23.1
0.674
22.8
0.502
-51.5
1300
0.373
-62.5
0.669
23.2
0.662
23
0.498
-54.6
1350
0.407
-60.6
0.69
23.6
0.684
23.3
0.479
-57.6
1400
0.418
-64.3
0.707
21.9
0.701
21.7
0.462
-59
1450
0.415
-67.6
0.714
20.2
0.707
20
0.452
-59.8
1500
0.41
-70.3
0.718
18.7
0.711
18.5
0.442
-61.2
1550
0.405
-72.7
0.719
17.2
0.713
17
0.437
-62.7
1600
0.4
-74.9
0.719
15.8
0.713
15.6
0.434
-63.9
1650
0.396
-77.3
0.718
14.6
0.712
14.3
0.432
-65.2
1700
0.394
-79.4
0.716
13.2
0.71
13
0.43
-66.7
1750
0.391
-81.9
0.713
11.9
0.707
11.7
0.43
-68.6
1800
0.388
-84.7
0.708
10.6
0.702
10.4
0.433
-70.2
1850
0.383
-87.9
0.7
9.3
0.694
9.1
0.434
-71.8
1900
0.368
-91.6
0.685
8.2
0.68
8
0.439
-73.9
1950
0.332
-93
0.665
8.4
0.66
8.1
0.442
-77.2
2000
0.336
-85.8
0.676
9.2
0.67
9
0.432
-79.7
2050
0.369
-87.1
0.683
7.8
0.678
7.5
0.43
-80.4
2100
0.386
-91
0.679
6.1
0.673
6
0.433
-81.2
2150
0.389
-95.1
0.665
4.8
0.66
4.7
0.44
-83.2
2200
0.356
-98.5
0.645
5
0.64
4.9
0.444
-86.2
2250
0.365
-91.1
0.661
5.2
0.656
5.1
0.441
-86.8
MC13850 Advance Information, Rev. 1
Freescale Semiconductor
19
Scattering and Noise Parameters
Table 11. Bypass Mode 25°C Scattering Parameters (continued)
(Vcc = 2.7V, Enable 1 = Low, Enable 2 = High, 50 Ω system)
S11
S21
S12
S22
f (MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
2300
0.401
-93.1
0.659
3.3
0.653
3.1
0.448
-87.9
2350
0.417
-96.9
0.646
1.8
0.641
1.7
0.453
-90
2400
0.427
-100.5
0.63
0.8
0.625
0.6
0.46
-92.2
2450
0.43
-104.2
0.613
0.2
0.606
-0.1
0.462
-94.1
2500
0.426
-108.3
0.593
0.1
0.586
-0.3
0.456
-96.5
2550
0.406
-112.5
0.579
0.9
0.573
0.6
0.437
-96.9
2600
0.369
-114.9
0.571
0.9
0.565
0.6
0.438
-94.4
Table 12. Bypass Mode 85°C Scattering Parameters
(Vcc = 2.7V, Enable 1 = Low, Enable 2 = high, 50 Ω system)
S11
S21
S12
S22
f (MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
300
0.877
-22.8
0.318
72.9
0.308
72.3
0.867
-8.2
350
0.852
-25.7
0.364
68.5
0.353
68
0.852
-13.3
400
0.826
-28.9
0.406
64.4
0.395
63.9
0.83
-17.5
450
0.803
-31.6
0.444
60.8
0.433
60.3
0.808
-21.5
500
0.76
-34.7
0.469
56.5
0.458
56.1
0.787
-22.9
550
0.737
-37.3
0.5
53.4
0.489
53
0.759
-26.1
600
0.71
-39.6
0.529
50.4
0.517
50
0.735
-28.8
650
0.683
-42
0.554
47.6
0.542
47.2
0.711
-31.5
700
0.657
-44.4
0.576
45
0.564
44.6
0.687
-33.6
750
0.631
-46.4
0.596
42.4
0.584
42.1
0.662
-35.9
800
0.607
-48.4
0.613
40.1
0.602
39.8
0.638
-38
850
0.581
-50.8
0.633
38
0.613
37.2
0.619
-40
900
0.556
-52.9
0.645
35.9
0.626
35.2
0.601
-41.6
950
0.537
-54.9
0.657
33.9
0.638
33.3
0.58
-43.3
1000
0.513
-56.3
0.666
32
0.647
31.4
0.563
-44.9
1050
0.494
-57.5
0.674
30.4
0.655
29.7
0.55
-46.8
1100
0.481
-58.1
0.68
28.9
0.661
28.3
0.535
-48.5
1150
0.469
-59.4
0.687
27.6
0.668
27
0.521
-50.4
MC13850 Advance Information, Rev. 1
20
Freescale Semiconductor
Scattering and Noise Parameters
Table 12. Bypass Mode 85°C Scattering Parameters (continued)
(Vcc = 2.7V, Enable 1 = Low, Enable 2 = high, 50 Ω system)
S11
S21
S12
S22
f (MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
1200
0.46
-61
0.696
26.3
0.677
25.7
0.509
-52.3
1250
0.451
-62.5
0.703
24.8
0.684
24.2
0.495
-53.7
1300
0.436
-64.1
0.707
23.3
0.689
22.8
0.483
-55.5
1350
0.426
-65.9
0.711
22
0.694
21.4
0.47
-57
1400
0.416
-67.7
0.715
20.7
0.697
20.1
0.463
-58.7
1450
0.408
-69.5
0.716
19.4
0.699
18.9
0.456
-59.8
1500
0.402
-71.3
0.719
18.2
0.702
17.7
0.446
-61.6
1550
0.398
-73
0.72
16.9
0.703
16.4
0.444
-63.4
1600
0.393
-74.5
0.72
15.8
0.703
15.3
0.442
-64.8
1650
0.391
-76.3
0.72
14.6
0.703
14.1
0.438
-66.5
1700
0.388
-77.5
0.718
13.4
0.701
12.9
0.436
-68.1
1750
0.383
-78.9
0.716
12.3
0.699
11.8
0.433
-70.2
1800
0.382
-80.8
0.712
11.1
0.696
10.6
0.436
-72.1
1850
0.383
-82.6
0.708
10.1
0.692
9.6
0.437
-73.6
1900
0.381
-84.3
0.702
9.1
0.687
8.6
0.439
-75.4
1950
0.382
-86.2
0.696
8.2
0.681
7.7
0.438
-77.4
2000
0.383
-87.7
0.689
7.3
0.674
6.8
0.441
-80.1
2050
0.383
-89.5
0.68
6.6
0.666
6.1
0.446
-81.8
2100
0.387
-91.3
0.674
6.1
0.659
5.6
0.444
-83.3
2150
0.385
-92.5
0.667
5.7
0.654
5.2
0.444
-85.3
2200
0.378
-92.8
0.664
5.3
0.65
4.8
0.445
-87.1
2250
0.392
-91.9
0.665
4.4
0.651
3.9
0.452
-88.3
2300
0.409
-92.6
0.658
3
0.645
2.6
0.46
-89.7
2350
0.42
-94.7
0.646
1.9
0.633
1.5
0.465
-91.7
2400
0.428
-97.2
0.63
1.2
0.617
0.7
0.471
-94.1
2450
0.428
-99.9
0.613
1.2
0.594
0.3
0.474
-97
2500
0.424
-101.9
0.599
2.3
0.581
1.4
0.461
-99.8
2550
0.416
-102.6
0.601
3.6
0.583
2.7
0.439
-99.8
2600
0.416
-101.7
0.615
3.6
0.596
2.7
0.431
-98.1
MC13850 Advance Information, Rev. 1
Freescale Semiconductor
21
Scattering and Noise Parameters
Table 13. Bypass Mode -40°C Scattering Parameters
(Vcc = 2.7V, Enable 1 = Low, Enable 2 = high, 50 Ω system)
S11
S21
S12
S22
f (MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
300
0.878
-22.7
0.318
73.1
0.309
72.5
0.868
-8.1
350
0.854
-25.7
0.363
68.7
0.354
68.2
0.853
-13.2
400
0.828
-28.9
0.406
64.7
0.396
64.2
0.832
-17.4
450
0.805
-31.5
0.445
61.1
0.434
60.6
0.81
-21.4
500
0.762
-34.7
0.469
56.8
0.459
56.4
0.79
-22.8
550
0.739
-37.3
0.501
53.7
0.491
53.3
0.762
-26
600
0.714
-39.7
0.53
50.7
0.519
50.3
0.738
-28.8
650
0.686
-42.1
0.556
47.9
0.545
47.6
0.715
-31.5
700
0.661
-44.5
0.579
45.3
0.568
45
0.691
-33.8
750
0.635
-46.5
0.599
42.7
0.588
42.4
0.666
-36.1
800
0.612
-48.5
0.617
40.4
0.606
40.1
0.642
-38.3
850
0.586
-50.9
0.637
38.3
0.618
37.5
0.622
-40.4
900
0.563
-52.9
0.65
36.2
0.632
35.5
0.602
-42.1
950
0.545
-55
0.663
34.2
0.644
33.6
0.58
-43.9
1000
0.524
-56.6
0.673
32.3
0.654
31.7
0.561
-45.5
1050
0.507
-58.3
0.682
30.5
0.663
29.9
0.545
-47.3
1100
0.493
-59.7
0.689
29
0.67
28.4
0.529
-48.6
1150
0.475
-61.6
0.697
27.5
0.679
26.9
0.517
-50.1
1200
0.46
-63.4
0.705
25.9
0.687
25.3
0.508
-52
1250
0.447
-64.8
0.71
24.2
0.692
23.7
0.495
-53.5
1300
0.431
-66.5
0.713
22.7
0.696
22.2
0.483
-55.3
1350
0.416
-68.2
0.714
21.2
0.697
20.7
0.472
-56.7
1400
0.398
-69.8
0.713
19.8
0.697
19.2
0.466
-58.3
1450
0.381
-69.6
0.705
18.9
0.69
18.4
0.466
-59.7
1500
0.39
-69.3
0.713
18.7
0.697
18.2
0.454
-62.5
1550
0.397
-71.6
0.721
17.4
0.705
16.9
0.446
-64.4
1600
0.395
-73.9
0.723
16
0.707
15.5
0.441
-65.5
1650
0.393
-76.2
0.724
14.7
0.708
14.2
0.438
-67
1700
0.392
-77.8
0.721
13.4
0.706
12.8
0.436
-68.5
1750
0.386
-79.8
0.719
12.1
0.704
11.6
0.433
-70.5
1800
0.381
-82.2
0.713
10.9
0.698
10.4
0.437
-72.3
MC13850 Advance Information, Rev. 1
22
Freescale Semiconductor
Scattering and Noise Parameters
Table 13. Bypass Mode -40°C Scattering Parameters (continued)
(Vcc = 2.7V, Enable 1 = Low, Enable 2 = high, 50 Ω system)
S11
S21
S12
S22
f (MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
1850
0.372
-83.3
0.705
10.1
0.69
9.6
0.439
-74.1
1900
0.376
-83.8
0.703
9.3
0.688
8.9
0.438
-76
1950
0.381
-86.2
0.697
8.3
0.683
7.8
0.437
-78
2000
0.382
-88
0.691
7.4
0.677
7
0.439
-80.6
2050
0.38
-89.3
0.684
6.9
0.67
6.4
0.442
-82.2
2100
0.391
-90.5
0.681
6
0.667
5.6
0.441
-83.4
2150
0.396
-92.5
0.672
5.2
0.659
4.7
0.443
-85.4
2200
0.387
-94.9
0.662
4.8
0.65
4.4
0.444
-87.5
2250
0.384
-93.3
0.665
4.5
0.653
4
0.448
-88.6
2300
0.404
-92.7
0.661
2.9
0.648
2.4
0.456
-89.8
2350
0.419
-94.5
0.646
1.6
0.634
1.1
0.461
-91.7
2400
0.431
-97
0.629
1
0.617
0.5
0.468
-93.8
2450
0.433
-100
0.616
1.2
0.598
0.3
0.471
-96.4
2500
0.431
-102.4
0.602
1.9
0.584
1
0.462
-99.1
2550
0.423
-103.8
0.599
3.1
0.582
2.2
0.441
-99.7
2600
0.42
-103.4
0.612
3.3
0.595
2.4
0.431
-98
Table 14. Standby Mode 25°C Scattering Parameters
(Vcc = 2.7V, Enable 1 = Low, Enable 2 = Low, 50 Ω system)
S11
S21
S12
S22
f (MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
300
0.947
-2.1
0.021
77.2
0.021
77
0.923
8.9
350
0.945
-2.3
0.025
78.8
0.025
78.7
0.927
6.2
400
0.944
-2.6
0.028
80
0.028
80
0.927
4.3
450
0.943
-2.6
0.032
81.4
0.032
81.1
0.928
2.5
500
0.932
-4
0.035
80.5
0.035
80.4
0.939
2.4
550
0.933
-4.3
0.039
81.2
0.039
80.9
0.934
1
600
0.931
-4.8
0.043
81.6
0.042
81.4
0.933
-0.1
650
0.928
-5.1
0.046
82
0.046
81.8
0.933
-1.3
700
0.924
-5.7
0.05
82.3
0.05
82.2
0.932
-2.2
MC13850 Advance Information, Rev. 1
Freescale Semiconductor
23
Scattering and Noise Parameters
Table 14. Standby Mode 25°C Scattering Parameters (continued)
(Vcc = 2.7V, Enable 1 = Low, Enable 2 = Low, 50 Ω system)
S11
S21
S12
S22
f (MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
750
0.923
-6
0.054
82.3
0.054
82.1
0.929
-3.4
800
0.923
-6.4
0.058
82.4
0.058
82.3
0.924
-4.4
850
0.918
-7.1
0.062
82.6
0.061
82.3
0.922
-5.6
900
0.914
-7.5
0.066
82.5
0.066
82.1
0.923
-6.6
950
0.913
-8.2
0.07
82.3
0.07
82.1
0.918
-7.5
1000
0.908
-8.6
0.074
81.8
0.074
81.7
0.916
-8.6
1050
0.902
-9.1
0.078
81.9
0.078
81.6
0.914
-9.8
1100
0.9
-9.5
0.082
81.5
0.082
81.4
0.91
-11.1
1150
0.896
-10.1
0.086
81.1
0.086
80.9
0.907
-12.4
1200
0.891
-10.8
0.091
80.7
0.09
80.3
0.904
-13.5
1250
0.888
-11.6
0.095
80.2
0.094
80
0.901
-14.6
1300
0.885
-12.1
0.099
79.7
0.098
79.5
0.897
-16.1
1350
0.881
-12.7
0.103
79.1
0.103
78.9
0.893
-17.6
1400
0.875
-13.5
0.107
78.4
0.106
78.3
0.89
-19.1
1450
0.87
-14.2
0.11
77.8
0.109
77.6
0.887
-20.5
1500
0.868
-14.8
0.114
77.8
0.113
77.6
0.883
-22.1
1550
0.872
-15.7
0.118
77.6
0.118
77.4
0.879
-23.9
1600
0.869
-16.9
0.123
77
0.123
76.7
0.874
-25.6
1650
0.864
-18.2
0.128
76.2
0.127
75.9
0.867
-27.3
1700
0.859
-19.5
0.132
75.3
0.131
75.1
0.862
-29.1
1750
0.85
-20.8
0.136
74.2
0.136
74
0.856
-30.9
1800
0.84
-22.1
0.14
73.5
0.14
73.4
0.85
-32.9
1850
0.819
-22.8
0.146
72.3
0.145
72.1
0.843
-34.8
1900
0.826
-22.9
0.149
70.6
0.148
70.4
0.836
-36.9
1950
0.83
-24.4
0.151
69.5
0.15
69.3
0.826
-39
2000
0.827
-25.9
0.153
68.9
0.152
68.7
0.818
-40.9
2050
0.82
-27.4
0.157
68.6
0.156
68.5
0.812
-42.8
2100
0.817
-28.8
0.162
67.5
0.161
67.4
0.803
-45
2150
0.812
-30.4
0.165
66.6
0.164
66.5
0.792
-47.3
2200
0.799
-32.1
0.172
65.5
0.172
65.5
0.784
-49.4
2250
0.786
-32.9
0.18
62.3
0.179
62.2
0.779
-51.7
MC13850 Advance Information, Rev. 1
24
Freescale Semiconductor
Scattering and Noise Parameters
Table 14. Standby Mode 25°C Scattering Parameters (continued)
(Vcc = 2.7V, Enable 1 = Low, Enable 2 = Low, 50 Ω system)
S11
S21
S12
S22
f (MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
2300
0.79
-33.5
0.179
57.4
0.178
57.3
0.765
-54.5
2350
0.794
-35
0.17
54.6
0.17
54.5
0.744
-57.2
2400
0.797
-36.7
0.16
54.2
0.159
54.1
0.72
-59.8
2450
0.799
-38.6
0.157
56.5
0.155
56.2
0.686
-62.1
2500
0.797
-40.8
0.157
58.3
0.156
58.2
0.628
-63
2550
0.792
-43.1
0.162
60.1
0.161
59.8
0.588
-59.5
2600
0.784
-45.4
0.173
59.7
0.172
59.5
0.603
-55
Table 15 and Table 16 list the Noise parameters for the packaged part as measured in a 50 Ω system for
low and high IP3 modes of operation and at several bias levels.
Table 15. Low IP3 Mode Noise Parameters
(50 Ω system)
Freq
(MHz)
Gamma Opt
Fmin
(dB)
Mag
Angle
Rn
Ga
(dB)
Vcc = 2.7 V, Icc = 4.7 mA
300
0.94
0.188
30
6.22
28.45
500
0.92
0.184
13.3
7.14
25.83
700
0.91
0.17
4.2
7.49
23.66
800
0.9
0.161
2.2
7.55
22.71
900
0.9
0.15
1.7
7.59
21.85
1000
0.91
0.139
2.7
7.65
21.07
1200
0.91
0.116
8.6
7.82
19.68
1500
0.96
0.087
25.8
7.8
17.9
1700
1
0.077
41.6
7.22
16.82
1900
1.05
0.078
59.9
6.59
15.72
2000
1.1
0.083
69.7
6.84
15.14
2100
1.12
0.093
79.8
7.9
14.53
2400
1.26
0.151
110.9
7.83
12.4
2500
1.31
0.181
121.2
6.02
11.57
2600
1.37
0.218
131.3
10.25
10.65
MC13850 Advance Information, Rev. 1
Freescale Semiconductor
25
Scattering and Noise Parameters
Table 15. Low IP3 Mode Noise Parameters (continued)
(50 Ω system)
Freq
(MHz)
Gamma Opt
Fmin
(dB)
Mag
Angle
Rn
Ga
(dB)
Vcc = 3.0 V, Icc = 4.7 mA
300
0.91
0.161
30.8
6.45
28.26
500
0.87
0.168
13.3
7.05
25.74
700
0.82
0.161
3.9
7.35
23.64
800
0.8
0.154
2
7.43
22.73
900
0.86
0.145
1.8
7.49
21.89
1000
0.92
0.135
3.1
7.52
21.12
1200
1.02
0.112
9.8
7.55
19.76
1500
1.15
0.083
28.3
7.53
18
1700
1.21
0.071
44.7
7.55
16.92
1900
1.26
0.072
63.4
7.61
15.82
2000
1.27
0.078
73.2
7.63
15.24
2100
1.28
0.088
83.1
7.63
14.63
2400
1.29
0.151
112.7
7.14
12.52
2500
1.28
0.185
122
6.73
11.69
2600
1.27
0.226
130.9
6.19
10.79
Vcc = 3.3 V, Icc = 4.7 mA
300
0.93
0.151
39.2
6.41
28.06
500
0.89
0.159
21.9
7.1
25.57
700
0.84
0.152
5.8
7.52
23.5
800
0.82
0.145
-0.6
7.62
22.61
900
0.89
0.136
-5.3
7.68
21.79
1000
0.96
0.125
-7.8
7.72
21.03
1200
1.07
0.103
-4.4
7.77
19.7
1500
1.21
0.073
28.8
7.75
17.95
1700
1.27
0.062
75.3
7.38
16.86
1900
1.32
0.064
145.6
6.67
15.72
2000
1.34
0.071
-169.1
6.56
15.12
2100
1.35
0.083
-116.4
7.21
14.47
2400
1.35
0.152
90.6
8.34
12.21
MC13850 Advance Information, Rev. 1
26
Freescale Semiconductor
Scattering and Noise Parameters
Table 15. Low IP3 Mode Noise Parameters (continued)
(50 Ω system)
Freq
(MHz)
Fmin
(dB)
2500
2600
Gamma Opt
Rn
Ga
(dB)
Mag
Angle
1.34
0.188
177.5
5.5
11.31
1.33
0.231
-85.9
9.22
10.33
Table 16. High IP3 Mode Noise Parameters
(50 Ω system)
Freq
(MHz)
Gamma Opt
Fmin
(dB)
Rn
Mag
Angle
Ga
(dB)
Vcc = 2.7 V, Icc = 9.9 mA
300
1.15
0.087
24.3
5.89
29.63
500
1.12
0.049
16.9
6.03
26.99
700
1.1
0.026
88.7
6.29
24.78
800
1.1
0.02
148.4
5.96
23.8
900
1.1
0.017
-139.1
5.88
22.9
1000
1.1
0.017
-56.1
6.1
22.08
1200
1.11
0.025
131.8
6.99
20.59
1500
1.16
0.053
74
7.17
18.65
1700
1.21
0.079
-98.3
6.17
17.45
1900
1.26
0.109
56.7
6.79
16.24
2000
1.3
0.125
116.1
8.44
15.61
2100
1.34
0.14
160.3
10.38
14.95
2400
1.47
0.185
178.7
6.23
12.7
2500
1.52
0.199
139
6.51
11.84
2600
1.57
0.211
72.4
12
10.9
Vcc = 3.0 V, Icc = 9 mA
300
0.94
0.04
141.2
5.37
29.7
500
0.98
0.022
-101.1
5.81
27.04
700
1.03
0.014
45.5
6.14
24.81
800
1.05
0.014
127.8
6
23.84
900
1.07
0.016
-145
6.04
22.94
1000
1.1
0.02
-53.6
6.45
22.11
MC13850 Advance Information, Rev. 1
Freescale Semiconductor
27
Scattering and Noise Parameters
Table 16. High IP3 Mode Noise Parameters (continued)
(50 Ω system)
Freq
(MHz)
Fmin
(dB)
1200
Gamma Opt
Rn
Ga
(dB)
Mag
Angle
1.14
0.033
138.7
6.21
20.63
1500
1.2
0.063
79.3
7.09
18.7
1700
1.24
0.089
-81.1
7.43
17.49
1900
1.28
0.117
110.7
6.97
16.26
2000
1.3
0.132
-158.3
5.91
15.62
2100
1.32
0.147
-71.5
8.72
14.94
2400
1.38
0.192
155.6
5.75
12.62
2500
1.4
0.206
-142.3
6.12
11.72
2600
1.41
0.22
-88.3
9.29
10.74
Vcc = 3.3 V, Icc = 9 mA
300
0.92
0.035
161.1
5.54
29.42
500
0.98
0.023
93.7
6.06
26.9
700
1.04
0.02
84.5
6.27
24.77
800
1.07
0.021
99.4
6.3
23.83
900
1.1
0.024
125.8
6.27
22.97
1000
1.12
0.028
162.9
6.2
22.16
1200
1.18
0.042
-95.2
6.73
20.7
1500
1.24
0.072
112.6
6.79
18.77
1700
1.29
0.097
-83.9
7.66
17.54
1900
1.33
0.124
90.3
7.84
16.28
2000
1.34
0.138
178.9
5.86
15.62
2100
1.36
0.153
-92.7
8.13
14.92
2400
1.35
0.146
-136.8
6.45
15.27
2500
1.41
0.197
160.5
5.73
12.52
2600
1.44
0.225
-50.3
11.99
10.58
Figure 2 through Figure 9 are constant noise figure and gain circles with input and output stability regions
shown on Smith charts. Gamma opt, noise resistance and stability at the frequency are shown for both low
and high IP3 modes of operation.
MC13850 Advance Information, Rev. 1
28
Freescale Semiconductor
Scattering and Noise Parameters
Figure 2. Constant Noise Figure and Gain Circles, 500 MHz, Low IP3 Mode, 25 °C
Figure 3. Constant Noise Figure and Gain Circles, 500 MHz, High IP3 Mode, 25 °C
MC13850 Advance Information, Rev. 1
Freescale Semiconductor
29
Scattering and Noise Parameters
Figure 4. Constant Noise Figure and Gain Circles, 900 MHz, Low IP3 Mode, 25 °C
Figure 5. Constant Noise Figure and Gain Circles, 900 MHz, High IP3 Mode, 25 °C
MC13850 Advance Information, Rev. 1
30
Freescale Semiconductor
Scattering and Noise Parameters
Figure 6. Constant Noise Figure and Gain Circles, 1960 MHz, Low IP3 Mode, 25 °C
Figure 7. Constant Noise Figure and Gain Circles, 1960 MHz, High IP3 Mode, 25 °C
MC13850 Advance Information, Rev. 1
Freescale Semiconductor
31
Scattering and Noise Parameters
Figure 8. Constant Noise Figure and Gain Circles, 2400 MHz, Low IP3 Mode, 25 °C
Figure 9. Constant Noise Figure and Gain Circles, 2400 MHz, High IP3 Mode, 25 °C
MC13850 Advance Information, Rev. 1
32
Freescale Semiconductor
Scattering and Noise Parameters
1.4
32
30
28
26
24
22
20
18
16
14
12
10
8
Noise Figure Min (dB)
1.3
1.2
1.1
1
0.9
0.8
Associated Gain (dB)
Figure 10 and Figure 11 show minimum noise figure and associated gain swept over frequency for
packaged parts in a 50 Ω system.
Fmin (dB)
Associated Gain (dB)
0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5
Frequency (GHz)
32
30
28
26
24
22
20
18
16
14
12
10
8
Noise Figure Min (dB)
1.6
1.5
1.4
1.3
1.2
1.1
1
Associated Gain (dB)
Figure 10. Minimum Noise Figure and Associated Gain vs. Frequency (Low IP3 Mode)
Fmin (dB)
Associated Gain (dB)
0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5
Frequency (GHz)
Figure 11. Minimum Noise Figure and Associated Gain vs. Frequency (High IP3 Mode)
Figure 12 and Figure 13 show maximum stable/available gain and forward insertion gain swept over
frequency for packaged parts in a 50 Ω system.
30
MSG, MAG, [S212] (dB)
25
MSG
20
|S212|
MAG
15
MSG/MAG (dB)
|s21|^2 (dB)
10
5
0.3
0.8
1.3
1.8
2.3
Frequency (GHz)
Figure 12. Maximum Stable/Available Gain and Forward Insertion Gain vs. Frequency (Low IP3 Mode)
MC13850 Advance Information, Rev. 1
Freescale Semiconductor
33
Application Information
MSG, MAG, [S212] (dB)
35
30
MSG
25
20
|S212|
MAG
15
MSG/MAG (dB)
|s21|^2 (dB)
10
5
0.3
0.8
1.3
1.8
2.3
Frequency (GHz)
Figure 13. Maximum Stable/Available Gain and Forward Insertion Gain vs. Frequency (High IP3 Mode)
4
Application Information
The MC13850 LNA is designed for applications in the 400 MHz to 2.5 GHz range. It has four different
modes: Low IP3, High IP3, bypass and standby. The LNA is programmable through the Enable 1 and
Enable 2 pins. In Low IP3 mode, current consumption is optimized. Current consumption is higher in High
IP3 mode to boost the intercept point performance. The gain difference between Low IP3 and High IP3
modes is typically 1.0 dB, and typically the Low and High IP3 modes have similar noise figures. The
internal bypass switch is designed for broadband applications. One of the advantages of the MC13850 is
the simplification of the matching network in both bypass and amplifier modes. The bypass switch is
designed so that changes of input and output return losses between bypass mode and active mode are
minimized. As a result, the mismatch of the LNA input and output is minimized and the matching network
design is simplified.
In the design of the external matching network, conjugate matching does not necessarily provide the best
noise figure and gain performance. Designing for a balance between noise figure, gain, return losses and
intercept point provides circuits that demonstrate overall performance. For a particular application or
specification requirement, the matching can be changed to achieve enhanced performance of one
parameter. Typical circuits are provided for 470 MHz–860 MHz, 900 MHz, 1.96 GHz and 2.4 GHz
applications.
Figure 14 shows the typical application circuit for 470 MHz–860 MHz. The noise figure, input intercept
point, gain and return losses are optimized. L1 and C2 act as a low frequency trap to improve the input
intercept point.
In Figure 15, the typical application circuit for 900 MHz is shown. The input low frequency trap again is
used to maximize the input intercept point. It has moderate IP3 performance for high gain. Figure 16 shows
the 900 MHz application circuit with feedback network for higher IP3. Capacitive feedback is used to
increase the third order input intercept point while decreasing gain and provides unconditional stability.
The corresponding printed circuit boards are shown in Figure 19 through Figure 23. Table 22 lists the bill
of materials for the application circuit evaluation boards.
MC13850 Advance Information, Rev. 1
34
Freescale Semiconductor
Application Information
4.1
470 MHz–860 MHz Application
This application was designed to provide NF < 1.4 dB, S21 gain > 21 dB, OIP3 of 10 dBm with return
losses better than -10 dB at 470 MHz and NF < 1.3 dB, S21 gain > 17 dB, OIP3 of 13 dBm at 860 MHz.
This is a broadband application with application to UHF. The performance can be further optimized for
narrowband applications such as RKE at the lower frequency, or wireless security at the higher frequency.
Typical performance that can be expected from this circuit at 2.7V is listed in Table 17.
Figure 14 shows the 470 MHz–860 MHz schematic with package pinouts and circuit components.
En able 1
Vcc
En ab le 2
8
7
6
5
R1
0402
330 ohm
Gain
Logic
C5
0402
.1 uF
Enable
Pin 1
Locator
on
Package
C4
0402
47 pF
L3
0402
4.3 nH
1
2
3
L2
0402
18 nH
4
NC
RF IN
Gnd
C1
0402
27 pF
L1
0402
47 nH
C2
0402
.1 uF
C3
0402
5 pF
R2
0402
51 ohm
.
RF
OUT
Figure 14. 470 MHz–860 MHz Application Schematic
Table 17. Typical 470 MHz–860 MHz Evaluation Board Performance
(Vcc = 2.7V, TA = 25°C)
Characteristic
Symbol
Min
Typ
Max
Unit
Low IP3
—
4.7
5.7
mA
High IP3
—
9.9
12.5
mA
Bypass
—
2
10
uA
Low IP3
20.5
21.6
—
High IP3
23.4
24.4
—
Bypass
-7.4
-6.9
—
470 MHz (refer to Figure 14)
Supply Current
RF Gain
Icc
G
dB
MC13850 Advance Information, Rev. 1
Freescale Semiconductor
35
Application Information
Table 17. Typical 470 MHz–860 MHz Evaluation Board Performance (continued)
(Vcc = 2.7V, TA = 25°C)
Characteristic
Symbol
Min
Typ
Max
Low IP3
—
1.32
1.6
High IP3
—
1.33
1.6
Bypass
—
9.5
10
Low IP3
-12.5
-11.2
—
High IP3
-9.2
-8
—
Bypass
26.7
27.7
—
Low IP3
6
7
—
High IP3
8.6
9.6
—
Low IP3
—
-5.2
-4.1
High IP3
—
-10.6
-8.5
Bypass
—
-4.2
-3.2
Low IP3
20.5
21.5
—
High IP3
23.1
24.1
—
Bypass
-7.7
-6.7
—
Low IP3
—
-27.3
-20
High IP3
—
-30.6
-25
Bypass
—
-6.7
-6.2
Low IP3
—
-6.6
-5.6
High IP3
—
-10.2
-9.2
Bypass
—
-11.7
-10.7
Noise Figure
Unit
NF
dB
Input IP3
IIP3
dBm
Power Output at 1.0 dB
Gain Compression
Input Return Loss
P1dBoutput
dBm
S11
dB
Gain
S21
dB
Reverse Isolation
S12
dB
Output Return Loss
S22
dB
MC13850 Advance Information, Rev. 1
36
Freescale Semiconductor
Application Information
Table 17. Typical 470 MHz–860 MHz Evaluation Board Performance (continued)
(Vcc = 2.7V, TA = 25°C)
Characteristic
Symbol
Min
Typ
Max
Low IP3
16.4
17.4
—
High IP3
18
19
—
Bypass
-6.7
-6.2
—
Low IP3
—
1.22
1.5
High IP3
—
1.32
1.6
Bypass
—
5.2
5.7
Unit
860 MHz (refer to Figure 14)
RF Gain
G
dB
Noise Figure
NF
dB
Input IP3
IIP3
dBm
Low IP3
-5.3
-4
—
High IP3
-2.3
-1.1
—
Bypass
23.7
24.7
—
Power Output at 1.0 dB
Gain Compression
P1dB
dBm
Low IP3
7.4
8.4
—
High IP3
8.1
9.2
—
Input Return Loss
S11
dB
Low IP3
—
-13.7
-11
High IP3
—
-21.3
-17
Bypass
—
-6
-5
Low IP3
17
18
—
High IP3
18.4
19.4
—
Bypass
-6.8
-5.8
—
Low IP3
—
-26.9
-25
High IP3
—
-29.2
-28.2
Bypass
—
-5.7
-5
Gain
S21
dB
Reverse Isolation
S12
dB
MC13850 Advance Information, Rev. 1
Freescale Semiconductor
37
Application Information
Table 17. Typical 470 MHz–860 MHz Evaluation Board Performance (continued)
(Vcc = 2.7V, TA = 25°C)
Characteristic
Symbol
Min
Typ
Max
Low IP3
—
-5.3
-4.3
High IP3
—
-7.2
-6.2
Bypass
—
-8.2
-7.2
Output Return Loss
Unit
S22
dB
4.2
900 MHz Application
This application was designed to provide NF < 1.4 dB, S21 gain > 21 dB, OIP3 of 17 dBm with return
losses better than -10 dB at 900 MHz. Typical performance that can be expected from this circuit at 2.7V
is listed in Table 18.
Figure 15 shows the 900 MHz schematic with package pinouts and circuit components.
Enable2
Enable1
8
7
6
Vcc
5
R1
0402
330 ohm
Gain
L ogic
C5
0402
.1 uF
Enable
Pin 1
Locator
on
Package
C4
0402
47 pF
L3
0402
4.3 nH
1
2
3
L2
0402
8.2 nH
4
NC
RF IN
Gnd
L1
0402
22 nH
C2
0402
.1 uF
C1
0402
27 pF
.
RF
OUT
R2
0402
15 ohm
C3
0402
2.7
pF
Figure 15. 900 MHz Application Schematic
Table 18. Typical 900 MHz Evaluation Board Performance
(Vcc = 2.7V, Ta = 25°C)
Characteristic
Symbol
Min
Typ
Max
Unit
Low IP3
—
4.7
5.7
mA
High IP3
—
9.9
12.5
mA
900 MHz (refer to Figure 15)
Supply Current
Icc
MC13850 Advance Information, Rev. 1
38
Freescale Semiconductor
Application Information
Table 18. Typical 900 MHz Evaluation Board Performance (continued)
(Vcc = 2.7V, Ta = 25°C)
Characteristic
Symbol
Min
Typ
Max
Unit
—
2
10
uA
Low IP3
20
21
—
High IP3
20.8
21.8
—
Bypass
-4.5
-3.7
—
Low IP3
—
1.38
1.6
High IP3
—
1.53
1.75
Bypass
—
3.85
4.6
Low IP3
-6.5
-4.1
—
High IP3
1.75
3.5
—
Bypass
27
27.6
—
Low IP3
10.9
11.9
—
High IP3
11.1
12.1
—
Low IP3
—
-10.7
-7
High IP3
—
-15.3
-12
Bypass
—
-9.5
-8
Low IP3
20.1
21.1
—
High IP3
20.8
21.8
—
Bypass
-4.5
-3.5
—
Low IP3
—
-23.9
-22.8
High IP3
—
-26.8
-25.7
Bypass
—
-3.5
-2.5
Low IP3
—
-10.7
-9.6
High IP3
—
-18.4
-15
Bypass
—
-18
-12.6
Bypass
RF Gain
G
dB
Noise Figure
NF
dB
Input IP3
IIP3
dBm
Power Output at 1.0 dB Gain Compression P1dBoutput
Input Return Loss
dBm
S11
dB
Gain
S21
dB
Reverse Isolation
S12
dB
Output Return Loss
S22
dB
MC13850 Advance Information, Rev. 1
Freescale Semiconductor
39
Application Information
4.3
900 MHz High IP3 Application
This application was designed to demonstrate performance at 900 MHz using capacitive feedback from
the output to input to raise IP3. Typical performance that can be expected from this circuit at 2.75V is listed
in Table 19.
Figure 16 shows the High IP3 900 MHz schematic with package pinouts and circuit components. This
900 MHz application differs from the 900 MHz application in Section 4.2, “900 MHz Application in that
it uses output to input feedback capacitance to raise the IP3 performance.
Enable 1
8
Enable2
7
6
Vcc
5
R1
0402
330 ohm
Gain
Logic
C7
0402
.1 uF
Enable
Pin 1
Locator
on
Package
C8
0402
47 pF
C1
0402
100 pF
1
2
3
4
NC
RF IN
Gnd
C2
0402
.1 uF
L1
0402
9.1 nH
.
C3
0402
0.5 pF
L2
0402
5.6 nH
R2
0402
10 ohm
C5
0402
1pF
RF
OUT
C6
0402
5.1 pF
C4
0402
0.5 pF
Figure 16. 900 MHz High IP3 Application Schematic
Table 19. Typical 900 MHz High IP3 Evaluation Board Performance
(Vcc - 2.75V, TA = 25°C)
Characteristic
Symbol
Min
Typ
Max
Unit
Low IP3
—
4.7
5.7
mA
High IP3
—
9.9
12.5
mA
Bypass
—
2
10
uA
Low IP3
15.5
16.5
—
High IP3
16.1
17.1
—
Bypass
-5.2
-4.2
—
900 MHz (refer to Figure 16)
Supply Current
RF Gain
Icc
G
dB
MC13850 Advance Information, Rev. 1
40
Freescale Semiconductor
Application Information
Table 19. Typical 900 MHz High IP3 Evaluation Board Performance (continued)
(Vcc - 2.75V, TA = 25°C)
Characteristic
Min
Typ
Max
Low IP3
—
1.43
1.65
High IP3
—
1.55
1.75
Bypass
—
4.6
5.8
Low IP3
-6
-2.9
—
High IP3
6
8
—
Bypass
26.2
27.7
—
Low IP3
8
12
—
High IP3
11.5
13.5
—
Low IP3
—
-12
-8
High IP3
—
-10
-8
Bypass
—
-9
-7
Low IP3
15.7
16.7
—
High IP3
16.2
17.2
—
Bypass
-4.7
-3.9
—
Low IP3
—
-19.3
-17.5
High IP3
—
-22.4
-21
Bypass
—
-3.9
-3.2
Low IP3
—
-11
-8.5
High IP3
—
-12.8
-10
Bypass
—
-31
-24
Noise Figure
Symbol
Unit
NF
dB
Input IP3
IIP3
dBm
Power Output at 1.0 dB Gain Compression P1dBoutput
Input Return Loss
dBm
S11
dB
Gain
S21
dB
Reverse Isolation
S12
dB
Output Return Loss
S22
dB
MC13850 Advance Information, Rev. 1
Freescale Semiconductor
41
Application Information
4.4
1960 MHz Application
This application was designed to provide NF = 1.5 dB, S21 gain > 15 dB, OIP3 of 20 dBm with return
losses better than -10 dB at 1960 MHz. Typical performance that can be expected from this circuit at 2.7V
is listed in Table 20.
Figure 17 shows the 1960 MHz schematic with package pinouts and circuit components.
Enable2
Enable1
8
7
6
Vcc
5
R1
0402
330 ohm
Gain
Logic
Enable
Pin 1
Locator
on
Package
C4
0402
33 pF
C1
0402
27 pF
1
3
2
L2
0402
2.7 nH
4
NC
RF IN
Gnd
L1
0402
3.3 nH
L1
0402
33 nH
C5
0402
.1 uF
.
C3
0402
27 pF
R2
0402
5 ohm
RF
OUT
C2
0402
.1 uF
Figure 17. 1960 MHz Application Schematic
Table 20. Typical 1900 MHz Evaluation Board Performance
(Vcc = 2.7V, Ta = 25°C)
Characteristic
Symbol
Min
Typ
Max
Unit
Low IP3
—
4.7
5.7
mA
High IP3
—
9.9
12.5
mA
Bypass
—
2
10
uA
Low IP3
13.8
14.8
—
High IP3
13.9
14.9
—
Bypass
-4.8
-3.5
—
1960 MHz (refer to Figure 17)
Supply Current
RF Gain
Icc
G
dB
MC13850 Advance Information, Rev. 1
42
Freescale Semiconductor
Application Information
Table 20. Typical 1900 MHz Evaluation Board Performance (continued)
(Vcc = 2.7V, Ta = 25°C)
Characteristic
Min
Typ
Max
Low IP3
—
1.5
1.8
High IP3
—
1.75
2
Bypass
—
3.2
4.4
Low IP3
3.5
6.5
—
High IP3
8
9.6
—
Bypass
22.6
23.6
—
Low IP3
1.5
3.2
—
High IP3
2.3
4
—
Low IP3
—
-12
-9.5
High IP3
—
-12.5
-10
Bypass
—
-11
-8
Low IP3
14
15
—
High IP3
14
15
—
Bypass
-4.8
-3.6
—
Low IP3
—
-21
-20
High IP3
—
-22.5
-21.5
Bypass
—
-3.7
-2.5
Low IP3
—
-13
-9
High IP3
—
-15
-11
Bypass
—
-8
-6
Noise Figure
Symbol
Unit
NF
dB
Input IP3
IIP3
dBm
Power Output at 1.0 dB Gain Compression P1dBoutput
Input Return Loss
dBm
S11
dB
Gain
S21
dB
Reverse Isolation
S12
dB
Output Return Loss
S22
dB
MC13850 Advance Information, Rev. 1
Freescale Semiconductor
43
Application Information
4.5
2400 MHz Application
This application was designed to provide NF = 1.6 dB, S21 gain = 12 dB, OIP3 of 23 dBm at 2400 MHz.
Typical performance that can be expected from this circuit at 2.7V is listed in Table 21.
Figure 18 shows the 2400 MHz schematic with package pinouts and circuit components.
Ena ble1
8
En ab le2
7
6
Vcc
5
R1
0402
330 ohm
Gain
Lo g ic
C5
0402
.1 uF
Enable
Pin 1
L o cato r
on
Pa ckag e
C4
0402
33 pF
C1
0402
5 pF
1
2
3
L2
0402
3.3 nH
4
NC
R F IN
Gn d
L1
0402
3 nH
C3
0402
27 pF
R2
0402
5 ohm
.
RF
OUT
C2
0402
.1 uF
Figure 18. 2400 MHz Application Schematic
Table 21. Typical 2400 MHz Evaluation Board Performance
(Vcc = 2.7V, Ta = 25°C)
Characteristic
Symbol
Min
Typ
Max
Unit
Low IP3
—
4.7
5.7
mA
High IP3
—
9.9
12.5
mA
Bypass
—
2
10
uA
Low IP3
11.5
12.5
—
High IP3
12
13
—
Bypass
-4
-3
—
2400 MHz (refer to Figure 18)
Supply Current
RF Gain
Icc
G
dB
MC13850 Advance Information, Rev. 1
44
Freescale Semiconductor
Application Information
Table 21. Typical 2400 MHz Evaluation Board Performance (continued)
(Vcc = 2.7V, Ta = 25°C)
Characteristic
Min
Typ
Max
Low IP3
—
1.6
1.95
High IP3
—
1.85
2.2
Bypass
—
3.2
4.3
Low IP3
7
10
—
High IP3
11
12.5
—
Bypass
26
27.2
—
Low IP3
-1
1
—
High IP3
0
2.2
—
Low IP3
—
-9
-7.5
High IP3
—
-9.5
-8
Bypass
—
-19.5
-12
Low IP3
11.6
12.6
—
High IP3
12
13
—
Bypass
-3.7
-3.2
—
Low IP3
—
-20
-19
High IP3
—
-20.6
-20
Bypass
—
-2.9
-2.4
Low IP3
—
-25
-15
High IP3
—
-27
-15
Bypass
—
-16
-10
Noise Figure
Symbol
Unit
NF
dB
Input IP3
IIP3
dBm
Power Output at 1.0 dB Gain Compression P1dBoutput
Input Return Loss
dBm
S11
dB
Gain
S21
dB
Reverse Isolation
S12
dB
Output Return Loss
S22
dB
MC13850 Advance Information, Rev. 1
Freescale Semiconductor
45
Printed Circuit Board and Bill of Materials
5
Printed Circuit Board and Bill of Materials
Figure 19 is a drawing of the printed circuit board. Figure 21 through Figure 25 are drawings of the
evaluation boards used for each of the application frequency designs described in Section 4. These
drawings show the boards with the circuit matching components placed and identified.
Note: Dimensions are in inches and [mm].
Soldering Note: The center flag under the part needs to be soldered down to ground on the bo
Figure 19. Printed Circuit Board
Figure 20. Typical Assembled Evaluation Board with SMA Connectors
MC13850 Advance Information, Rev. 1
46
Freescale Semiconductor
Printed Circuit Board and Bill of Materials
Figure 21. 470–860 MHz Application Board
Figure 22. 900 MHz Application Board
MC13850 Advance Information, Rev. 1
Freescale Semiconductor
47
Printed Circuit Board and Bill of Materials
Figure 23. 900 MHz High IP3 Application Board
Figure 24. 1960 MHz Application Board
MC13850 Advance Information, Rev. 1
48
Freescale Semiconductor
Printed Circuit Board and Bill of Materials
Figure 25. 2400 MHz Application Board
The Bill of Materials for each of the application frequency circuit boards is listed in Table 22. The value,
case size, manufacturer and circuit function of each component are provided.
Table 22. Bill of Materials for the Application Circuit Boards
Component
Value
Case
Manufacturer
Comments
470–860 MHz (refer to Figure 21)
C1
27 pF
402
Murata
DC block, input match
C2
0.1 uF
402
Murata
Low freq. bypass
C3
5 pF
402
Murata
DC block, output match
C4
47 pF
402
Murata
860 MHz short
C5
0.1 uF
402
Murata
Low freq. bypass
L1
47 nH
402
Murata
Input match
L2
18 nH
402
Murata
Output match, bias decouple
L3
4.3 nH
402
Murata
Input match
R1
330 Ω
402
KOA
Logic circuit bias
R2
51 Ω
402
KOA
Lower gain, improve return losses
900 MHz (refer to Figure 22)
C1
27 pF
402
Murata
DC block, input match
C2
0.1 uF
402
Murata
DC block, input match
C3
2.7 pF
402
Murata
DC block, output match
C4
47 pF
402
Murata
900 MHz short
C5
0.1 uF
402
Murata
Low freq. bypass
L1
22 nH
402
Murata
Input match
MC13850 Advance Information, Rev. 1
Freescale Semiconductor
49
Printed Circuit Board and Bill of Materials
Table 22. Bill of Materials for the Application Circuit Boards (continued)
Component
Value
Case
Manufacturer
Comments
L2
8.2 nH
402
Murata
Output match, bias decouple
L3
4.3 nH
402
Murata
Input match
R1
330 Ω
402
KOA
Logic circuit bias
R2
15 Ω
402
KOA
Lower gain, improve return losses
900 MHz High IP3 (refer to Figure 23)
C1
100 pF
402
Murata
DC block, input match
C2
0.1 uF
402
Murata
DC block, input match
C3
0.5 pF
402
Murata
IP3 improvement
C4
0.5 pF
402
Murata
IP3 improvement
C5
1.0 pF
402
Murata
Output match
C6
5.1 pF
402
Murata
Output match
C7
0.1 uF
402
Murata
Bypass
C8
47 pF
402
Murata
900 MHz short
L1
9.1 nH
402
Murata
Input match
L2
5.6 nH
402
Murata
Output match
R1
330 Ω
402
KOA
Logic circuit bias
R2
10 Ω
402
KOA
Lower gain, increase stability
1960 MHz (refer to Figure 24)
C1
27 pF
402
Murata
DC block, input match
C2
0.1 uF
402
Murata
DC block
C3
27 pF
402
Murata
DC block, output match
C4
33 pF
402
Murata
1960 MHz short
C5
0.1 uF
402
Murata
Low freq. bypass
L1
33 nH
402
Murata
Input match
L2
3.3 nH
402
Murata
Input match
L3
2.7 nH
402
Murata
Output match, bias decouple
R1
330 Ω
402
KOA
Logic circuit bias
R2
5Ω
402
KOA
Lower gain, increase stability
2400 MHz (refer to Figure 25)
C1
5 pF
402
Murata
DC block, input match
C2
0.1 uF
402
Murata
DC block
C3
27 pF
402
Murata
DC block, output match
MC13850 Advance Information, Rev. 1
50
Freescale Semiconductor
Printed Circuit Board and Bill of Materials
Table 22. Bill of Materials for the Application Circuit Boards (continued)
Component
Value
Case
Manufacturer
Comments
C4
33 pF
402
Murata
1960 MHz short
C5
0.1 uF
402
Murata
Low freq. bypass
L1
3 nH
402
Murata
Input match
L2
3.3 nH
402
Murata
Input match
R1
330 Ω
402
KOA
Logic circuit bias
R2
5Ω
402
KOA
Lower gain, increase stability
MC13850 Advance Information, Rev. 1
Freescale Semiconductor
51
Packaging
6
Packaging
Figure 26 and Figure 27 are the package drawings with dimensions for the MLPD-8, 2 × 2 × 0.6 mm,
package.
DETAIL G
(See Figure 27)
Figure 26. Outline Dimensions for MLPD-8
MC13850 Advance Information, Rev. 1
52
Freescale Semiconductor
Product Documentation
Figure 27. Packaging Details
7
Product Documentation
This data sheet is labeled as a particular type: Product Preview, Advance Information, or Technical Data.
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8
Revision History
Table 23 summarizes the revisions to this document since Rev. 0.
Table 23. Revision History
Revision
Description of Change
0
Initial Release
1
Technical Content Changes include:
• In Table 4, min and max values added.
• Added Table 5–Table 16, S parameters.
• Added Figure 2–Figure 9, constant gain and noise figure circles.
• Added Figure 10,Figure 11, minimum NF and associated gain.
• Added Figure 12, Figure 13, maximum stable gain and forward insertion gain.
• Section 4 application circuit performance parameters extensively revised.
• Section 5 printed circuit board and application board drawings added.
• Table 22 bill of materials for application revised.
• Section 6 package drawing changed to MLPD-8 package.
MC13850 Advance Information, Rev. 1
Freescale Semiconductor
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Document Number: MC13850
Rev. 1
12/2010
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