FREESCALE MBC13917

Freescale Semiconductor
Data Sheet: Advance Information
Document Number: MBC13917
Rev. 1.0, 12/2010
MBC13917
Package Information
Plastic Package: MLPD-6
1.5 mm x 2.0 mm
Case: 2129-01
MBC13917
General Purpose SiGe:C RF
Cascode Low Noise Amplifier
1
Introduction
The MBC13917 is a cost-effective, high isolation
amplifier fabricated with an advanced RF BiCMOS
process using the SiGe:C module. This is the leadless
package version of the MBC13916 device.
The MBC13917 is designed for a wide range of general
purpose RF applications and has excellent high
frequency gain and noise figure. On-chip bias circuitry
sets the bias point while matching is accomplished
off-chip, affording the maximum in application
flexibility.
1.1
Ordering Information
Device
Device Marking or
Operating
Temperature Range
Package
MBC13917EP
917
MLPD-6
Contents
1
2
3
4
5
6
7
8
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Electrical Characteristics . . . . . . . . . . . . . . . . . .3
Scattering and Noise Parameters . . . . . . . . . . . .6
Application Circuits . . . . . . . . . . . . . . . . . . . . . .24
Printed Circuit Board and Bill of Materials . . .33
Packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .37
Product Documentation . . . . . . . . . . . . . . . . . . .38
Revision History . . . . . . . . . . . . . . . . . . . . . . . . .38
Features
The MBC13917 has the following features:
• Usable frequency range = 100 MHz to 2500 MHz
• 27 dB typical gain at 434 MHz, Vcc = 2.7V
• NFmin (device level) = 0.95 dB @ 434 MHz
• NFmin (device level) = 0.95 dB @ 900 MHz
• 6.5 dBm typical output power at -10 dBm Pin at
900 MHz, Vcc = 2.7V
This document contains information on a new product. Specifications and information herein are subject to change without notice.
© Freescale Semiconductor, Inc., 2006–2010. All rights reserved.
Introduction
•
•
•
•
•
1.2
46 dB typical reverse isolation (device level) at 434 MHz, Vcc = 2.7V
4.7 mA typical bias current at Vcc = 2.7V
2.7V to 3.3V supply
Industry standard MLPD-6 leadless package
Available only in tape and reel packaging
Applications
Ideal for use in any RF product that operates between 100 MHz and 2.5 GHz, and may be applied in:
• Buffer amplifiers
• Mixers
• IF amplifiers
• Voltage controlled oscillators (VCOs)
• Low power amplifiers
• Gain block in RF end products
• Smart metering
• Industrial—scientific and medical (ISM)
• Consumer—WLAN, 802.11 b/g
• Auto—TPMS, RKE, GPS, active antennas, wireless security
Figure 1 shows a simplified block diagram of the MBC13917 with the pinouts and location of the Pin 1
designator on the package.
RF IN
Gnd A
NC
1
6
2
5
3
4
Gnd B
RF OUT
NC
Figure 1. Functional Block Diagram
MBC13917 Advance Information, Rev. 1.0
2
Freescale Semiconductor
Electrical Characteristics
2
Electrical Characteristics
Table 1 lists the recommended operating conditions of the MBC13917 device.
Table 1. Recommended Operating Conditions
Characteristic
Symbol
Min
Typ
Max
Unit
RF Frequency
fRF
100
—
2500
MHz
Supply Voltage
VCC
2.1
2.7
3.3
Vdc
Table 2. lists the maximum ratings for the device.
Table 2. Maximum Ratings (TA = 25°C, unless otherwise noted)
Rating
Symbol
Value
Unit
Supply Voltage
VCC
3.5
Vdc
RF Input Power
PRF
10
dBm
Power Dissipation
PDIS
100
mW
Icc
20
mA
Thermal Resistance, Junction to Case
RθJC
400
°C/W
Storage Temperature Range
Tstg
-65 to 150
°C
Operating Ambient Temperature Range
TA
-40 to 85
°C
Operating Case Temperature
Tc
-40 to 100
°C
Supply Current
Note: Maximum Ratings and ESD
1. Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the limits in the Recommended Operating Conditions and Electrical
Characteristics tables.
2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM) ≤550 V and Machine Model (MM) ≤50 V. Additional
ESD data is available upon request.
Table 3 lists electrical characteristics associated with noise performance measured in a 50 Ω system.
Additional noise parameters are listed in Table 9.
Table 3. Device Level Characteristics
(Vcc = 2.7V, TA = 25°C, measured in S-parameter test fixture, unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
21.7
23.7
—
21.4
23.4
—
f= 900 MHz
18.7
20.7
—
f= 1900 MHz
12.6
14.6
—
Unit
Insertion Gain
f= 350 MHz
f= 430 MHz
|S21|
dB
See note below
MBC13917 Advance Information, Rev. 1.0
Freescale Semiconductor
3
Electrical Characteristics
Table 3. Device Level Characteristics (continued)
(Vcc = 2.7V, TA = 25°C, measured in S-parameter test fixture, unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
34
36.4
—
33.2
35.6
—
26.5
28.9
—
15
17.6
—
—
1.0
1.35
—
0.95
1.30
f= 900 MHz
—
0.95
1.30
f= 1900 MHz
—
1.5
1.85
7.7
9.7
—
8.3
10.3
—
f= 900 MHz
11.3
13.3
—
f= 1900 MHz
11.6
13.6
—
-49
-53
—
-48
-52
—
f= 900 MHz
-42
-46
—
f= 1900 MHz
-40
-44
—
Unit
Maximum Stable Gain and Maximum Available Gain
(Note1)
f= 350 MHz
MSG, MAG
f= 430 MHZ
f= 900 MHz
f= 1900 MHZ
dB
Minimum Noise Figure
f= 350 MHz
f= 430 MHZ
NFmin
dB
Output Third Order Intercept
f= 350 MHz
f= 430 MHZ
OIP3
dBm
Reverse Isolation
f= 350 MHz
f= 430 MHZ
S12
dB
Note: Maximum Available Gain and Maximum Stable Gain are defined by the K factor as follows:
if K>1, MAG=|S21/S12(K ±SqRt(K2-1)|
if K<1, MSG=|S21/S12|
Table 4 lists the electrical characteristics measured on evaluation boards tuned for typical application
frequencies. Further details on the application circuits are shown in Section 4, “Application Circuits” and
details on the boards are shown in Section 5, “Printed Circuit Board and Bill of Materials.”
Table 4. Electrical Characteristics Measured in Frequency-Specific Tuned Circuits
(Vcc = 2.7V, TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Supply Current
Icc
—
4.7
5.6
mA
RF Gain
G
26.6
27.7
—
dB
350 MHz (see Figure 16)
MBC13917 Advance Information, Rev. 1.0
4
Freescale Semiconductor
Electrical Characteristics
Table 4. Electrical Characteristics Measured in Frequency-Specific Tuned Circuits (continued)
(Vcc = 2.7V, TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
NF
—
2.1
2.5
dB
OIP3
8.0
9.5
—
dBm
P1dBoutput
-1
1
—
dBm
Input Return Loss
S11
—
-8
-7
dB
Small Signal Gain
S21
26
27
—
dB
Reverse Isolation
S12
—
-47
-46
dB
Output Return Loss
S22
—
-9
-7.5
dB
Supply Current
Icc
—
4.7
5.6
mA
RF Gain
G
27.5
28.6
—
dB
Noise Figure
NF
—
2.2
2.6
dB
OIP3
9.2
10.7
—
dBm
P1dBoutput
0.7
2.2
—
dBm
Input Return Loss
S11
—
-12
-10
dB
Small Signal Gain
S21
27
28.5
—
dB
Reverse Isolation
S12
—
-47
-46
dB
Output Return Loss
S22
—
-12
-10
dB
Supply Current
Icc
—
4.7
5.6
mA
RF Gain
G
26
27
—
dB
Noise Figure
NF
—
2.3
2.65
dB
OIP3
9.5
10.9
—
dBm
P1dBoutput
1
2.2
—
dBm
Input Return Loss
S11
—
-15
-10
dB
Small Signal Gain
S21
26
27
—
dB
Reverse Isolation
S12
—
-46
-45
dB
Output Return Loss
S22
—
-19
-16
dB
Supply Current
Icc
—
4.7
5.6
mA
RF Gain
G
22.5
24
—
dB
Noise Figure
NF
—
1.19
1.5
dB
Noise Figure
Output 3rd Order Intercept Point
Power Output at 1 dB Gain Compression
370 MHz (see Figure 16)
Output 3rd Order Intercept Point
Power Output at 1 dB Gain Compression
434 MHz (see Figure 17)
Output 3rd Order Intercept Point
Power Output at 1 dB Gain Compression
900 MHz (see Figure 18)
MBC13917 Advance Information, Rev. 1.0
Freescale Semiconductor
5
Scattering and Noise Parameters
Table 4. Electrical Characteristics Measured in Frequency-Specific Tuned Circuits (continued)
(Vcc = 2.7V, TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OIP3
11
12.4
—
dBm
P1dBoutput
2
3.5
—
dBm
Input Return Loss
S11
—
-10
-9
dB
Small Signal Gain
S21
23
24
—
dB
Reverse Isolation
S12
—
-40
-39
dB
Output Return Loss
S22
—
-23
-16
dB
Supply Current
Icc
—
4.7
5.6
mA
RF Gain
G
13.5
14.9
—
dB
Noise Figure
NF
—
1.8
2.15
dB
OIP3
7
8.5
—
dBm
P1dBoutput
-2.5
-1.1
—
dBm
Input Return Loss
S11
—
-13
-10
dB
Small Signal Gain
S21
13.8
14.8
—
dB
Reverse Isolation
S12
—
-42.5
-41.5
dB
Output Return Loss
S22
—
-11.8
-10
dB
Output 3rd Order Intercept Point
Power Output at 1 dB Gain Compression
1900 MHz (see Figure 19)
Output 3rd Order Intercept Point
Power Output at 1 dB Gain Compression
3
Scattering and Noise Parameters
Table 5 through Table 8 lists the S parameters for the packaged part in a 50 Ω system at four supply voltage
levels.
Table 5. Scattering Parameters
(Vcc = 2.7V, 25°C, 50Ω system)
S11
S21
S12
S22
f (MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
100
0.864
-8.1
12.178
169.9
0.001
24.4
0.953
-1.1
150
0.859
-12.4
12.428
165.1
0.001
36.2
0.952
-1.5
200
0.843
-16.2
12.112
160.5
0.001
39.4
0.951
-2.2
250
0.831
-20.6
12.128
156.1
0.002
52.1
0.952
-2.8
300
0.812
-24.5
11.95
151.8
0.002
52.6
0.951
-3.3
350
0.794
-28.3
11.741
147.9
0.002
59.2
0.95
-4
400
0.775
-32.1
11.556
143.8
0.002
64.2
0.947
-4.6
450
0.754
-35.7
11.353
140
0.003
66
0.947
-5.4
MBC13917 Advance Information, Rev. 1.0
6
Freescale Semiconductor
Scattering and Noise Parameters
Table 5. Scattering Parameters (continued)
(Vcc = 2.7V, 25°C, 50Ω system)
S11
S21
S12
S22
f (MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
500
0.709
-39.5
10.954
135.2
0.003
65.2
0.951
-4.7
550
0.694
-42.9
10.587
131.5
0.003
64.8
0.944
-5.5
600
0.671
-46.2
10.212
128
0.003
65.5
0.941
-6.2
650
0.647
-49.5
10.029
124.5
0.004
64.4
0.937
-7.1
700
0.622
-53.1
9.866
121.3
0.004
63.2
0.934
-7.8
750
0.595
-56.1
9.671
117.7
0.004
63.5
0.927
-8.7
800
0.573
-59.2
9.299
114.5
0.004
61
0.918
-9.6
850
0.554
-62.5
9.077
111.4
0.005
61.1
0.911
-10.6
900
0.528
-65.1
8.803
108.4
0.005
57.4
0.907
-11.4
950
0.51
-68
8.535
105.5
0.005
55.2
0.897
-12.2
1000
0.488
-70.6
8.247
102.4
0.005
52.2
0.888
-13.3
1050
0.471
-73.2
7.994
99.7
0.005
50.4
0.881
-14.5
1100
0.453
-75.4
7.698
97
0.005
47
0.871
-15.7
1150
0.436
-77.9
7.443
94.5
0.006
44.3
0.861
-16.8
1200
0.422
-80.4
7.223
91.6
0.005
40.7
0.85
-17.9
1250
0.408
-82.6
6.974
89.1
0.006
36
0.838
-18.9
1300
0.393
-84.6
6.764
86.7
0.005
31.1
0.827
-20.4
1350
0.378
-86.8
6.552
84.1
0.005
27.8
0.815
-21.8
1400
0.367
-88.7
6.29
81.8
0.005
22
0.803
-23
1450
0.355
-90.1
6.094
79.7
0.005
19.9
0.793
-24.3
1500
0.35
-91.9
5.921
77.2
0.005
14.3
0.78
-25.9
1550
0.346
-93.3
5.725
75.7
0.005
10.4
0.769
-27.4
1600
0.342
-95.7
5.513
72.8
0.005
4.5
0.755
-29
1650
0.335
-97.1
5.327
70.7
0.005
-4.6
0.742
-30.5
1700
0.335
-98.9
5.136
68.4
0.005
-9.6
0.73
-32.1
1750
0.326
-100.6
4.957
66.4
0.005
-18.9
0.717
-33.8
1800
0.321
-102.2
4.776
64.2
0.005
-23.7
0.704
-35.6
1850
0.314
-103.6
4.585
62.2
0.005
-24.4
0.689
-37.4
1900
0.312
-103.4
4.432
60.5
0.006
-35.8
0.675
-39.1
1950
0.315
-104.3
4.28
58.5
0.006
-45.6
0.663
-40.7
2000
0.316
-105.1
4.142
56.5
0.007
-54.2
0.651
-42.6
MBC13917 Advance Information, Rev. 1.0
Freescale Semiconductor
7
Scattering and Noise Parameters
Table 5. Scattering Parameters (continued)
(Vcc = 2.7V, 25°C, 50Ω system)
S11
S21
S12
S22
f (MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
2050
0.317
-106
3.994
54.7
0.007
-60.3
0.64
-44.5
2100
0.319
-106.7
3.838
52.8
0.008
-64.9
0.627
-46.3
2150
0.318
-107.2
3.719
50.9
0.008
-70.7
0.616
-48.3
2200
0.321
-107.8
3.568
49.4
0.009
-74.6
0.605
-50.1
2250
0.326
-108.1
3.445
47.3
0.01
-79.8
0.594
-51.9
2300
0.328
-108.2
3.339
45.6
0.011
-85.1
0.584
-53.8
2350
0.333
-108.8
3.185
44.4
0.012
-88
0.577
-55.5
2400
0.339
-109.5
3.067
42.2
0.013
-91.2
0.566
-57.4
2450
0.34
-109.7
2.959
40.7
0.014
-94.1
0.56
-59
2500
0.342
-109.8
2.837
39.3
0.017
-97.7
0.552
-60.7
2550
0.346
-109.1
2.736
38
0.019
-106.2
0.55
-62.6
2600
0.355
-108.9
2.645
36.4
0.018
-112
0.543
-64.8
Table 6. Scattering Parameters
(Vcc = 3V, 25°C, 50Ω system)
S11
S21
S12
S22
f (MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
100
0.852
-8.1
13.693
169.6
0.001
16.9
0.952
-1.1
150
0.846
-12.3
13.955
164.7
0.001
32.4
0.951
-1.5
200
0.829
-16.1
13.599
160
0.001
43.8
0.95
-2.1
250
0.814
-20.5
13.595
155.5
0.001
51.5
0.951
-2.7
300
0.794
-24.3
13.377
151.3
0.002
57
0.95
-3.2
350
0.774
-28.1
13.128
147.3
0.002
56.4
0.949
-3.8
400
0.753
-31.8
12.903
143.1
0.002
62.7
0.947
-4.5
450
0.731
-35.3
12.649
139.3
0.002
65.9
0.947
-5.3
500
0.685
-38.9
12.176
134.6
0.003
64.3
0.951
-4.6
550
0.669
-42.2
11.763
130.9
0.003
64.2
0.945
-5.4
600
0.644
-45.3
11.34
127.4
0.003
64.6
0.942
-6.1
650
0.619
-48.5
11.117
123.9
0.003
65.3
0.938
-6.9
700
0.592
-51.8
10.898
120.7
0.004
61.4
0.935
-7.6
MBC13917 Advance Information, Rev. 1.0
8
Freescale Semiconductor
Scattering and Noise Parameters
Table 6. Scattering Parameters (continued)
(Vcc = 3V, 25°C, 50Ω system)
S11
S21
S12
S22
f (MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
750
0.563
-54.5
10.651
117.2
0.004
62.4
0.928
-8.5
800
0.54
-57.4
10.237
114
0.004
60.2
0.919
-9.3
850
0.521
-60.6
9.973
111
0.004
56.5
0.913
-10.4
900
0.494
-62.8
9.657
108
0.005
55.9
0.909
-11.2
950
0.476
-65.4
9.348
105.2
0.005
52.9
0.899
-12
1000
0.454
-67.8
9.03
102.2
0.005
50.8
0.891
-13
1050
0.435
-70.2
8.743
99.6
0.005
46.9
0.883
-14.2
1100
0.418
-72.1
8.414
96.9
0.005
43.5
0.872
-15.4
1150
0.4
-74.3
8.126
94.5
0.005
41.2
0.863
-16.5
1200
0.386
-76.5
7.881
91.7
0.005
35.6
0.853
-17.6
1250
0.372
-78.5
7.606
89.3
0.005
32.7
0.842
-18.6
1300
0.356
-80.2
7.367
86.9
0.005
26
0.83
-20.1
1350
0.341
-82.1
7.13
84.5
0.005
22.9
0.817
-21.4
1400
0.33
-83.8
6.846
82.2
0.005
18.3
0.807
-22.6
1450
0.319
-85
6.631
80.3
0.004
11.5
0.797
-23.9
1500
0.314
-86.6
6.435
77.8
0.004
5.9
0.784
-25.4
1550
0.311
-87.8
6.223
76.3
0.004
2.3
0.773
-27
1600
0.305
-90.1
5.995
73.6
0.004
-6.7
0.759
-28.5
1650
0.299
-91.2
5.793
71.6
0.004
-15.4
0.747
-30
1700
0.299
-93
5.587
69.4
0.005
-19.4
0.734
-31.6
1750
0.289
-94.6
5.395
67.4
0.005
-29.9
0.722
-33.3
1800
0.285
-96.1
5.198
65.2
0.005
-36.4
0.709
-35.2
1850
0.278
-97.4
4.992
63.3
0.005
-36.9
0.695
-36.9
1900
0.276
-97.1
4.823
61.7
0.006
-46.2
0.681
-38.5
1950
0.28
-97.9
4.658
59.8
0.006
-55.1
0.668
-40.2
2000
0.281
-98.6
4.507
57.9
0.007
-62.2
0.657
-42.1
2050
0.282
-99.5
4.349
56.1
0.008
-68.8
0.646
-43.9
2100
0.285
-100.2
4.181
54.3
0.008
-74.9
0.634
-45.7
2150
0.284
-100.7
4.049
52.4
0.009
-76.8
0.621
-47.6
2200
0.287
-101.2
3.889
50.9
0.01
-81.2
0.611
-49.5
2250
0.292
-101.6
3.754
49
0.011
-84.5
0.601
-51.3
MBC13917 Advance Information, Rev. 1.0
Freescale Semiconductor
9
Scattering and Noise Parameters
Table 6. Scattering Parameters (continued)
(Vcc = 3V, 25°C, 50Ω system)
S11
S21
S12
S22
f (MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
2300
0.296
-101.5
3.637
47.3
0.012
-89.2
0.591
-53.1
2350
0.3
-102.3
3.476
46.1
0.013
-92.3
0.583
-54.8
2400
0.307
-103
3.346
44
0.014
-95.2
0.573
-56.7
2450
0.308
-103.1
3.229
42.6
0.015
-97.3
0.566
-58.3
2500
0.31
-103.3
3.097
41.2
0.017
-100.5
0.558
-60
2550
0.316
-102.6
2.989
40
0.019
-108.9
0.557
-61.8
2600
0.326
-102.5
2.89
38.4
0.019
-114.4
0.549
-64.1
Table 7. Scattering Parameters
(Vcc = 3.3V, 25°C, 50Ω system)
S11
S21
S12
S22
f (MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
100
0.84
-8.1
15.185
169.4
0.001
13.7
0.949
-1.1
150
0.832
-12.4
15.453
164.4
0.001
28.4
0.949
-1.4
200
0.814
-16.1
15.06
159.6
0.001
45.2
0.949
-2.1
250
0.798
-20.4
15.023
154.9
0.001
47.4
0.95
-2.6
300
0.776
-24.2
14.754
150.6
0.002
50.6
0.948
-3.1
350
0.755
-27.9
14.456
146.6
0.002
58.2
0.948
-3.8
400
0.732
-31.6
14.192
142.4
0.002
62.9
0.947
-4.4
450
0.708
-34.9
13.882
138.5
0.002
64.5
0.946
-5.2
500
0.662
-38.3
13.323
133.7
0.002
62.7
0.95
-4.4
550
0.645
-41.4
12.86
130.1
0.003
61.7
0.944
-5.3
600
0.619
-44.4
12.397
126.7
0.003
63.6
0.942
-5.9
650
0.591
-47.4
12.121
123.2
0.003
62.7
0.939
-6.8
700
0.564
-50.4
11.841
119.9
0.003
60.6
0.934
-7.4
750
0.535
-52.9
11.538
116.5
0.003
60.5
0.927
-8.3
800
0.511
-55.5
11.087
113.4
0.004
58.6
0.92
-9.1
850
0.491
-58.4
10.779
110.4
0.004
58.2
0.914
-10.1
900
0.465
-60.4
10.413
107.5
0.004
54.4
0.909
-10.9
950
0.446
-62.7
10.066
104.7
0.004
53
0.898
-11.8
MBC13917 Advance Information, Rev. 1.0
10
Freescale Semiconductor
Scattering and Noise Parameters
Table 7. Scattering Parameters (continued)
(Vcc = 3.3V, 25°C, 50Ω system)
S11
S21
S12
S22
f (MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
1000
0.423
-64.8
9.716
101.9
0.004
48.9
0.891
-12.8
1050
0.405
-66.8
9.403
99.3
0.004
46.2
0.884
-13.9
1100
0.387
-68.5
9.042
96.7
0.005
41.3
0.873
-15.1
1150
0.37
-70.3
8.72
94.4
0.004
38.1
0.863
-16.2
1200
0.355
-72.3
8.454
91.7
0.004
33.6
0.854
-17.2
1250
0.341
-73.9
8.155
89.4
0.004
28.5
0.844
-18.2
1300
0.326
-75.3
7.89
87.1
0.004
22.8
0.831
-19.7
1350
0.311
-76.9
7.627
84.7
0.004
19
0.819
-21.1
1400
0.3
-78.3
7.325
82.6
0.004
10.8
0.809
-22.3
1450
0.29
-79.2
7.093
80.7
0.004
5.1
0.8
-23.5
1500
0.285
-80.6
6.881
78.2
0.004
0.1
0.786
-25
1550
0.282
-81.7
6.653
76.8
0.004
-5
0.775
-26.5
1600
0.276
-83.9
6.411
74.2
0.004
-14.1
0.763
-28.1
1650
0.27
-84.8
6.198
72.3
0.004
-23.3
0.751
-29.5
1700
0.27
-86.5
5.978
70.1
0.004
-28.6
0.738
-31.1
1750
0.26
-87.8
5.771
68.2
0.004
-38
0.725
-32.8
1800
0.256
-89.2
5.563
66.1
0.005
-44.4
0.713
-34.7
1850
0.25
-90.5
5.346
64.2
0.005
-46
0.7
-36.4
1900
0.248
-90
5.163
62.6
0.006
-53.4
0.685
-37.9
1950
0.252
-90.9
4.987
60.8
0.007
-62.1
0.672
-39.6
2000
0.253
-91.6
4.824
59
0.007
-69.9
0.661
-41.5
2050
0.255
-92.5
4.658
57.3
0.008
-73.5
0.651
-43.3
2100
0.258
-93.2
4.481
55.5
0.009
-79
0.639
-45
2150
0.258
-93.6
4.336
53.7
0.009
-82.5
0.625
-47
2200
0.261
-94.1
4.169
52.2
0.01
-85.3
0.616
-48.9
2250
0.267
-94.5
4.023
50.4
0.011
-88.8
0.607
-50.6
2300
0.271
-94.5
3.898
48.7
0.012
-92.8
0.596
-52.3
2350
0.275
-95.3
3.73
47.5
0.013
-96.3
0.587
-54.1
2400
0.281
-96.2
3.591
45.6
0.014
-97.7
0.577
-56
2450
0.284
-96.4
3.466
44.2
0.016
-100.2
0.572
-57.6
2500
0.287
-96.6
3.326
42.8
0.018
-102.3
0.564
-59.2
MBC13917 Advance Information, Rev. 1.0
Freescale Semiconductor
11
Scattering and Noise Parameters
Table 7. Scattering Parameters (continued)
(Vcc = 3.3V, 25°C, 50Ω system)
S11
S21
S12
S22
f (MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
2550
0.293
-95.9
3.21
41.6
0.02
-110
0.562
-61
2600
0.304
-96
3.105
40.1
0.02
-114.4
0.554
-63.4
Table 8. Scattering Parameters
(Vcc = 3.5V, 25°C, 50Ω system)
S11
S21
S12
S22
f (MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
100
0.84
-8.1
15.185
169.4
0.001
13.7
0.949
-1.1
150
0.832
-12.4
15.453
164.4
0.001
28.4
0.949
-1.4
200
0.814
-16.1
15.06
159.6
0.001
45.2
0.949
-2.1
250
0.798
-20.4
15.023
154.9
0.001
47.4
0.95
-2.6
300
0.776
-24.2
14.754
150.6
0.002
50.6
0.948
-3.1
350
0.755
-27.9
14.456
146.6
0.002
58.2
0.948
-3.8
400
0.732
-31.6
14.192
142.4
0.002
62.9
0.947
-4.4
450
0.708
-34.9
13.882
138.5
0.002
64.5
0.946
-5.2
500
0.662
-38.3
13.323
133.7
0.002
62.7
0.95
-4.4
550
0.645
-41.4
12.86
130.1
0.003
61.7
0.944
-5.3
600
0.619
-44.4
12.397
126.7
0.003
63.6
0.942
-5.9
650
0.591
-47.4
12.121
123.2
0.003
62.7
0.939
-6.8
700
0.564
-50.4
11.841
119.9
0.003
60.6
0.934
-7.4
750
0.535
-52.9
11.538
116.5
0.003
60.5
0.927
-8.3
800
0.511
-55.5
11.087
113.4
0.004
58.6
0.92
-9.1
850
0.491
-58.4
10.779
110.4
0.004
58.2
0.914
-10.1
900
0.465
-60.4
10.413
107.5
0.004
54.4
0.909
-10.9
950
0.446
-62.7
10.066
104.7
0.004
53
0.898
-11.8
1000
0.423
-64.8
9.716
101.9
0.004
48.9
0.891
-12.8
1050
0.405
-66.8
9.403
99.3
0.004
46.2
0.884
-13.9
1100
0.387
-68.5
9.042
96.7
0.005
41.3
0.873
-15.1
1150
0.37
-70.3
8.72
94.4
0.004
38.1
0.863
-16.2
1200
0.355
-72.3
8.454
91.7
0.004
33.6
0.854
-17.2
MBC13917 Advance Information, Rev. 1.0
12
Freescale Semiconductor
Scattering and Noise Parameters
Table 8. Scattering Parameters (continued)
(Vcc = 3.5V, 25°C, 50Ω system)
S11
S21
S12
S22
f (MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
1250
0.341
-73.9
8.155
89.4
0.004
28.5
0.844
-18.2
1300
0.326
-75.3
7.89
87.1
0.004
22.8
0.831
-19.7
1350
0.311
-76.9
7.627
84.7
0.004
19
0.819
-21.1
1400
0.3
-78.3
7.325
82.6
0.004
10.8
0.809
-22.3
1450
0.29
-79.2
7.093
80.7
0.004
5.1
0.8
-23.5
1500
0.285
-80.6
6.881
78.2
0.004
0.1
0.786
-25
1550
0.282
-81.7
6.653
76.8
0.004
-5
0.775
-26.5
1600
0.276
-83.9
6.411
74.2
0.004
-14.1
0.763
-28.1
1650
0.27
-84.8
6.198
72.3
0.004
-23.3
0.751
-29.5
1700
0.27
-86.5
5.978
70.1
0.004
-28.6
0.738
-31.1
1750
0.26
-87.8
5.771
68.2
0.004
-38
0.725
-32.8
1800
0.256
-89.2
5.563
66.1
0.005
-44.4
0.713
-34.7
1850
0.25
-90.5
5.346
64.2
0.005
-46
0.7
-36.4
1900
0.248
-90
5.163
62.6
0.006
-53.4
0.685
-37.9
1950
0.252
-90.9
4.987
60.8
0.007
-62.1
0.672
-39.6
2000
0.253
-91.6
4.824
59
0.007
-69.9
0.661
-41.5
2050
0.255
-92.5
4.658
57.3
0.008
-73.5
0.651
-43.3
2100
0.258
-93.2
4.481
55.5
0.009
-79
0.639
-45
2150
0.258
-93.6
4.336
53.7
0.009
-82.5
0.625
-47
2200
0.261
-94.1
4.169
52.2
0.01
-85.3
0.616
-48.9
2250
0.267
-94.5
4.023
50.4
0.011
-88.8
0.607
-50.6
2300
0.271
-94.5
3.898
48.7
0.012
-92.8
0.596
-52.3
2350
0.275
-95.3
3.73
47.5
0.013
-96.3
0.587
-54.1
2400
0.281
-96.2
3.591
45.6
0.014
-97.7
0.577
-56
2450
0.284
-96.4
3.466
44.2
0.016
-100.2
0.572
-57.6
2500
0.287
-96.6
3.326
42.8
0.018
-102.3
0.564
-59.2
2550
0.293
-95.9
3.21
41.6
0.02
-110
0.562
-61
2600
0.304
-96
3.105
40.1
0.02
-114.4
0.554
-63.4
MBC13917 Advance Information, Rev. 1.0
Freescale Semiconductor
13
Scattering and Noise Parameters
Table 9 lists the noise parameters for the packaged part as measured in a 50 Ω system.
Table 9. Noise Parameters
(50Ω system)
Freq
Fmin
Gamma Opt
Ga
Rn
MHz
dB
Mag
Angle
dB
Vcc = 2.7 V, Icc = 4.7 mA, 25°C
100
1.14
0.154
63.1
0.17
34.78
300
1.01
0.153
50.4
0.16
33.08
500
0.93
0.152
46.2
0.15
31.16
700
0.91
0.151
49.1
0.14
29.05
900
0.95
0.151
57.3
0.13
26.83
1000
0.99
0.152
63
0.13
25.69
1200
1.09
0.156
76.5
0.13
23.38
1400
1.193
0.164
91.6
0.12
21.09
1600
1.28
0.178
106.6
0.12
18.87
1900
1.515
0.21
125.6
0.12
15.78
2000
1.61
0.225
130.3
0.12
14.84
2200
1.84
0.262
135.8
0.13
13.15
2400
2.12
0.308
135.1
0.14
11.74
Vcc = 3.0 V, Icc = 5.3 mA, 25°C
100
1.18
0.127
83
0.16
35.42
300
1.05
0.125
65.4
0.15
33.81
500
0.96
0.124
57.8
0.14
31.93
700
0.91
0.123
58.3
0.13
29.86
900
0.95
0.125
65.2
0.13
27.63
1000
0.98
0.127
70.4
0.12
26.48
1200
1.07
0.133
83.5
0.12
24.16
1400
1.153
0.143
98.4
0.12
21.83
1600
1.24
0.159
113.3
0.11
19.57
1900
1.455
0.194
132
0.11
16.44
2000
1.54
0.209
136.2
0.12
15.49
2200
1.76
0.246
140.6
0.12
13.79
2400
2.03
0.291
137.8
0.13
12.39
-4.7
0.2
34.43
Vcc = 3.3 V, Icc = 6.1 mA, 25°C
100
1.20
0.122
MBC13917 Advance Information, Rev. 1.0
14
Freescale Semiconductor
Scattering and Noise Parameters
Table 9. Noise Parameters (continued)
(50Ω system)
Freq
Fmin
Gamma Opt
Ga
Rn
MHz
dB
Mag
Angle
dB
300
1.05
0.112
171.7
0.11
33.33
500
0.95
0.105
-57.8
0.14
31.86
700
0.90
0.102
33.5
0.14
30.07
900
0.93
0.104
92.1
0.11
28.06
1000
0.96
0.106
111
0.11
26.99
1200
1.04
0.114
132.6
0.1
24.76
1400
1.12
0.127
137.5
0.1
22.48
1600
1.20
0.146
132.5
0.1
20.22
1900
1.41
0.184
120.3
0.12
17.02
2000
1.49
0.2
118.3
0.13
16.04
2200
1.71
0.236
122.1
0.14
14.27
2400
1.97
0.279
141.9
0.12
12.81
Vcc = 3.5 V, Icc = 6.7 mA, 25°C
100
1.20
0.126
121
0.14
36.11
300
1.05
0.108
98.2
0.14
34.63
500
0.95
0.096
86.1
0.13
32.83
700
0.90
0.091
82.9
0.12
30.79
900
0.92
0.092
86.6
0.12
28.58
1000
0.95
0.095
90.4
0.11
27.43
1200
1.02
0.104
101
0.11
25.09
1400
1.10
0.12
113.7
0.11
22.73
1600
1.18
0.141
126.7
0.11
20.44
1900
1.38
0.181
142.4
0.1
17.26
2000
1.47
0.198
145.7
0.11
16.3
2200
1.68
0.233
148
0.11
14.59
2400
1.94
0.274
142.9
0.12
13.21
MBC13917 Advance Information, Rev. 1.0
Freescale Semiconductor
15
Scattering and Noise Parameters
Figure 2 through Figure 5 are the constant noise figure and gain circles with input and output stability
regions shown on Smith charts. Gamma opt, noise resistance and stability at the frequency are shown for
two values of the external bias resistor at 350 MHz, 450 MHz, 900 MHz, and 1900 MHz.
Figure 2. Constant Noise Figure and Gain Circles: 350 MHz
MBC13917 Advance Information, Rev. 1.0
16
Freescale Semiconductor
Scattering and Noise Parameters
Figure 3. Constant Noise Figure and Gain Circles: 450 MHz
Figure 4. Constant Noise Figure and Gain Circles: 900 MHz
MBC13917 Advance Information, Rev. 1.0
Freescale Semiconductor
17
Scattering and Noise Parameters
Figure 5. Constant Noise Figure and Gain Circles: 1900 MHz
Figure 6 shows minimum noise figure and associated gain versus frequency for the packaged device in a
50 Ω system at four bias levels.
40
2.30
35
2.10
30
Nfmin (dB)
1.90
1.70
25
1.50
20
1.30
15
1.10
0.90
10
0.70
5
0.2
0.6
1
1.4
1.8
2.2
2.6
Nfmin (dB) 2.7V
Associated Gain (dB)
2.50
Nfmin (dB) 3V
Nfmin (dB) 3.3V
Nfmin (dB) 3.5V
Associated Gain (dB) 2.7V
Associated Gain (dB) 3V
Associated Gain (dB) 3.3V
Associated Gain (dB) 3.5V
Frequency (GHz)
Figure 6. Minimum Noise Figure and Associated Gain vs. Frequency at 25°C
MBC13917 Advance Information, Rev. 1.0
18
Freescale Semiconductor
Scattering and Noise Parameters
Figure 7 shows minimum noise figure versus frequency over temperature for the packaged device in a
50 Ω system.
2.50
2.30
2.10
1.90
Nfmin (dB)
1.70
1.50
NFmin 25C
1.30
NFmin ‐40C
1.10
Nfmin 85C
0.90
0.70
0.50
0.2
0.6
1
1.4
1.8
2.2
2.6
Frequency (GHz)
Figure 7. Minimum Noise Figure vs. Frequency and Temperature
Figure 8 shows maximum stable and available gain and forward insertion gain for the packaged device in
a 50 Ω system over frequency.
40
MSG, MAG, |S212|(dB)
35
30
25
MSG/MAG
20
MSG/MAG (dB)
|s21|^2 (dB)
15
|S212|
10
5
0.1
0.6
1.1
1.6
2.1
2.6
Frequency (GHz)
Figure 8. Maximum Stable Gain/Maximum Available Gain and Forward Insertion Gain vs. Frequency at 25°C
MBC13917 Advance Information, Rev. 1.0
Freescale Semiconductor
19
Scattering and Noise Parameters
Figure 9 shows power out versus power in the 350 MHz application circuit at four bias levels.
10
8
6
Pout 2.7V
Pout (dBm)
4
Pout 3.0V
‐30
‐25
‐20
‐15
‐10
2
Pout 3.3V
0
Pout 3.5V
‐5
0
‐2
‐4
Pin (dBm)
Figure 9. Output Power vs. Input Power for 350 MHz at 25°C
Figure 10 shows power out versus power in the 900 MHz application circuit at four bias levels.
10
8
Pout (dBm)
6
4
Pout 2.7V
2
Pout 3.0V
Pout 3.3V
0
‐30
‐25
‐20
‐15
‐10
‐5
‐2
0
Pout 3.5V
‐4
Pin (dBm)
‐6
Figure 10. Output Power vs. Input Power for 900 MHz at 25°C
MBC13917 Advance Information, Rev. 1.0
20
Freescale Semiconductor
Scattering and Noise Parameters
Figure 11 shows power out versus power in the 1900 MHz application circuit at four bias levels.
15
10
Pout (dBm)
5
Pout 2.7V
Pout 3.0V
0
‐30
‐25
‐20
‐15
‐10
‐5
0
Pout 3.3V
‐5
Pout 3.5V
‐10
‐15
Pin (dBm)
Figure 11. Output Power vs. Input Power for 1900 MHz at 25°C
Figure 12 shows supply current versus power in and bias in the 350 MHz application circuit at four bias
levels.
12
11
10
9
Icc 2.7V
Icc (mA)
8
Icc 3.0V
7
Icc 3.3V
6
Icc 3.5V
5
4
‐30
‐25
‐20
‐15
‐10
‐5
0
Pin (dBm)
Figure 12. Supply Current vs. Input Power for 350 MHz at 25°C
MBC13917 Advance Information, Rev. 1.0
Freescale Semiconductor
21
Scattering and Noise Parameters
Figure 13 shows supply current versus power in and bias in the 900 MHz application circuit at four bias
levels.
12
11
Icc (mA)
10
9
Icc 2.7V
8
Icc 3.0V
7
Icc 3.3V
6
Icc 3.5V
5
4
‐30
‐25
‐20
‐15
‐10
‐5
0
Pin (dBm)
Figure 13. Supply Current vs. Input Power for 900 MHz at 25°C
Figure 14 shows supply current versus power in and bias in the 1900 MHz application circuit at four bias
levels.
14
13
12
11
Icc (mA)
10
Icc 2.7V
9
Icc 3.0V
8
Icc 3.3V
7
Icc 3.5V
6
5
4
‐30
‐25
‐20
‐15
‐10
‐5
0
Pin (dBm)
Figure 14. Supply Current vs. Input Power for 1900 MHz at 25°C
MBC13917 Advance Information, Rev. 1.0
22
Freescale Semiconductor
Scattering and Noise Parameters
Figure 15 shows maximum unilateral gain versus frequency at four bias levels.
45
Maximum Unilateral Gain (dB)
40
35
30
Gumax 2.7V
25
Gumax 3.0V
20
Gumax 3.3V
15
Gumax 3.5V
10
5
0.1
0.6
1.1
1.6
2.1
2.6
Frequency (GHz)
Figure 15. Maximum Unilateral Gain vs. Frequency and Bias at 25°C
MBC13917 Advance Information, Rev. 1.0
Freescale Semiconductor
23
Application Circuits
4
Application Circuits
The MBC13917 LNA is designed for applications in the 100 MHz to 2.5 GHz range. In the application
examples included in this section, a balance is made between competing RF performance characteristics
of Icc, NF, gain IP3, and return losses to demonstrate overall performance. Conjugate matching is not used
for the input or output.
Instead, matching that achieves a tradeoff in RF performance qualities is shown. For a particular
application or specification requirement, the matching can be changed to achieve enhanced performance
of one parameter (generally at the expense of other parameters). Application information for 350 MHz,
434 MHz, 900 MHz and 1900 MHz circuits is provided.
• Section 3, “Scattering and Noise Parameters” provides Smith charts with gain and noise circles for
each application frequency.
• Section 5, “Printed Circuit Board and Bill of Materials” provides the evaluation board layout and
Bill of Material for the circuits.
4.1
350 MHz–370 MHz Applications
This application circuit was designed to provide NF = 2.1 dB, S21 gain > 27 dB for 350 MHz. Return
losses and gain are similar for 350 MHz–370 MHz.
• Component C4 has the greatest impact on return losses, NF, and gain, by moving the input and
output on the Smith chart.
• Component L1 can be lowered to improve NF, by trading off S11 return loss.
• Gain, OIP3 and P1dBoutput can be increased, by decreasing the resistor value at the output
(without impacting NF or return losses).
This application is intended for a range of designs, including TETRA land mobile and base station
transceivers. Typical performance that can be expected from this circuit at 2.7V is listed in Table 10.
Figure 16 is the 350 MHz–370 MHz application schematic with package pinouts and the circuit
component topology.
Vcc
C1
47 pF
L1
39 nH
Gnd
RF IN
1
6
2
5
L2
47 nH
R1
24 ohm
Gnd
NC
3
4
C2
100 pF
C4
2.4 pF
C3
.1uF
RF
OUT
C5
3 pF
NC
.
Figure 16. 350 MHz–370 MHz Application Schematic
MBC13917 Advance Information, Rev. 1.0
24
Freescale Semiconductor
Application Circuits
Table 10 provides the electrical characteristics for the 350 MHz–370 MHz application.
Table 10. Typical 350–370 MHz Evaluation Board Performance
Characteristic
350 MHz
(Figure 16)
Vcc 2.7V
TA = 25°C
370 MHz
(Figure 16)
Vcc 2.7V
TA = 25°C
350 MHz
(Figure 16)
Vcc 2.7V
TA = 85°C
Symbol
Min
Typ
Max
Unit
Supply Current
Icc
—
4.7
5.6
mA
RF Gain
G
26.6
27.7
—
dB
Noise Figure
NF
—
2.1
2.5
dB
OIP3
8
9.5
—
dBm
P1dBoutput
-1
1
—
dBm
Input Return Loss
S11
—
-8
-7
dB
Small Signal Gain
S21
26
27
—
dB
Reverse Isolation
S12
—
-47
-46
dB
Output Return Loss
S22
—
-9
-7.5
dB
Supply Current
Icc
—
4.7
5.6
mA
RF Gain
G
27.5
28.6
—
dB
Noise Figure
NF
—
2.2
2.6
dB
OIP3
9.2
10.7
—
dBm
P1dBoutput
0.7
2.2
—
dBm
Input Return Loss
S11
—
-12
-10
dB
Small Signal Gain
S21
27
28.5
—
dB
Reverse Isolation
S12
—
-47
-46
dB
Output Return Loss
S22
—
-12
-10
dB
Supply Current
Icc
—
5.3
6.2
mA
RF Gain
G
25.6
26.7
—
dB
Noise Figure
NF
—
2.4
2.75
dB
OIP3
9.2
10.7
—
dBm
P1dBoutput
0
1.8
—
dBm
Input Return Loss
S11
—
-8
-7
dB
Small Signal Gain
S21
25.5
26.6
—
dB
Reverse Isolation
S12
—
-47.5
-46.5
dB
Output Return Loss
S22
—
-9.7
-8
dB
Output 3rd Order Intercept Point
Power Output at 1 dB Gain Compression
Output 3rd Order Intercept Point
Power Output at 1 dB Gain Compression
Output 3rd Order Intercept Point
Power Output at 1 dB Gain Compression
MBC13917 Advance Information, Rev. 1.0
Freescale Semiconductor
25
Application Circuits
Table 10. Typical 350–370 MHz Evaluation Board Performance (continued)
Characteristic
350 MHz
(Figure 16)
Vcc 2.7V
TA = -40°C
Symbol
Min
Typ
Max
Unit
Supply Current
Icc
—
4.3
5.2
mA
RF Gain
G
27.8
29
—
dB
Noise Figure
NF
—
1.7
2
dB
OIP3
7.6
9
—
dBm
P1dBoutput
0
0.9
—
dBm
Input Return Loss
S11
—
-8.7
-7
dB
Small Signal Gain
S21
27.4
28.4
—
dB
Reverse Isolation
S12
—
-47.8
-46.8
dB
Output Return Loss
S22
—
-9.6
-8.5
dB
Output 3rd Order Intercept Point
Power Output at 1 dB Gain Compression
MBC13917 Advance Information, Rev. 1.0
26
Freescale Semiconductor
Application Circuits
4.2
434 MHz Application
This application circuit was designed to provide NF = 2.3 dB, S21 gain > 27 dB for 434 MHz.
• Component C4 has the greatest impact on return losses, NF, and gain, by moving the input and
output on the Smith chart.
• Component L1 can be lowered to improve NF, by trading off S11 return loss.
• Gain, OIP3 and P1dBoutput can be increased, by decreasing the resistor at the output (without
impacting NF or return losses).
This application is intended for a range of designs, including TPMS, RKE, RF metering and key fob
designs using a battery.
Figure 17 is the 434 MHz application schematic with package pinouts and the circuit component topology.
Vcc
C1
47 pF
L1
39 nH
Gnd
RF IN
1
6
2
5
C2
100 pF
L2
33 nH
RF
OUT
R1
24 ohm
Gnd
NC
3
4
C3
.1uF
C4
2.4 pF
NC
Figure 17. 434 MHz Application Schematic
Typical performance that can be expected from this circuit at 2.7V is listed in Table 11.
Table 11. Typical 434 MHz Evaluation Board Performance
Characteristic
434 MHz
(Figure 17)
Vcc 2.7V
TA = 25°C
Symbol
Min
Typ
Max
Unit
Supply Current
Icc
—
4.7
5.6
mA
RF Gain
G
26
27
—
dB
Noise Figure
NF
—
2.3
2.65
dB
OIP3
9.5
10.9
—
dBm
P1dBoutput
1
2.2
—
dBm
Input Return Loss
S11
—
-15
-10
dB
Small Signal Gain
S21
26
27
—
dB
Reverse Isolation
S12
—
-46
-45
dB
Output Return Loss
S22
—
-19
-16
dB
Output 3rd Order Intercept Point
Power Output at 1 dB Gain Compression
MBC13917 Advance Information, Rev. 1.0
Freescale Semiconductor
27
Application Circuits
Table 11. Typical 434 MHz Evaluation Board Performance (continued)
Characteristic
434 MHz
(Figure 17)
Vcc 2.7V
TA = 85°C
434 MHz
(Figure 17)
Vcc 2.7V
TA = -40°C
Symbol
Min
Typ
Max
Unit
Supply Current
Icc
—
5.3
6.2
mA
RF Gain
G
25.5
26.5
—
dB
Noise Figure
NF
—
2.65
3.05
dB
OIP3
10
11.3
—
dBm
P1dBoutput
1
2
—
dBm
Input Return Loss
S11
—
-15.5
-12
dB
Small Signal Gain
S21
24.8
25.9
—
dB
Reverse Isolation
S12
—
-45
-44
dB
Output Return Loss
S22
—
-17.8
-14
dB
Supply Current
Icc
—
4.3
5.2
mA
RF Gain
G
27.5
28.5
—
dB
Noise Figure
NF
—
1.96
2.3
dB
OIP3
8.5
10.3
—
dBm
P1dBoutput
0.8
1.8
—
dBm
Input Return Loss
S11
—
-16
-10
dB
Small Signal Gain
S21
26.7
27.8
—
dB
Reverse Isolation
S12
—
-44
-44
dB
Output Return Loss
S22
—
-20
-16
dB
Output 3rd Order Intercept Point
Power Output at 1 dB Gain Compression
Output 3rd Order Intercept Point
Power Output at 1 dB Gain Compression
MBC13917 Advance Information, Rev. 1.0
28
Freescale Semiconductor
Application Circuits
4.3
900 MHz Application
This application was designed to provide NF = 1.2 dB, S21 gain > 24 dB, OIP3 of 12.4 dBm with return
losses better than -10 dB at 900 MHz.
Figure 18 is the 900 MHz application schematic with package pinouts and the circuit component topology.
Vcc
L1
6.8 nH
C1
47 pF
Gnd
RF IN
1
6
2
5
C2
47 pF
L2
10 nH
RF
OUT
Gnd
C5
3 pF
C4
2 pF
NC
3
C3
.1uF
NC
4
.
Figure 18. 900 MHz Application Schematic
Typical performance that can be expected from this circuit at 2.7V is listed in Table 12.
Table 12. Typical 900 MHz Evaluation Board Performance
Characteristic
900 MHz
(Figure 18)
Vcc 2.7V
TA = 25°C
Symbol
Min
Typ
Max
Unit
Supply Current
Icc
—
4.7
5.6
mA
RF Gain
G
22.5
24
—
dB
Noise Figure
NF
—
1.19
1.5
dB
OIP3
11
12.4
—
dBm
P1dBoutput
2
3.5
—
dBm
Input Return Loss
S11
—
-10
-9
dB
Small Signal Gain
S21
23
24
—
dB
Reverse Isolation
S12
—
-40
-39
dB
Output Return Loss
S22
—
-23
-16
dB
Output 3rd Order Intercept Point
Power Output at 1 dB Gain Compression
MBC13917 Advance Information, Rev. 1.0
Freescale Semiconductor
29
Application Circuits
Table 12. Typical 900 MHz Evaluation Board Performance (continued)
Characteristic
900 MHz
(Figure 18)
Vcc 2.7V
TA = 85°C
900 MHz
(Figure 18)
Vcc 2.7V
TA = -40°C
Symbol
Min
Typ
Max
Unit
Supply Current
Icc
—
5.3
6.2
mA
RF Gain
G
21.5
23
—
dB
Noise Figure
NF
—
1.3
1.65
dB
OIP3
10
11.6
—
dBm
P1dBoutput
1
2.5
—
dBm
Input Return Loss
S11
—
-9.5
-9
dB
Small Signal Gain
S21
21
22.8
—
dB
Reverse Isolation
S12
—
-40.7
-39.5
dB
Output Return Loss
S22
—
-24.7
-18
dB
Supply Current
Icc
—
4.3
5.2
mA
RF Gain
G
24.1
25.6
—
dB
Noise Figure
NF
—
0.95
1.3
dB
OIP3
10
11.4
—
dBm
P1dBoutput
1.2
2.65
—
dBm
Input Return Loss
S11
—
-11.5
-10
dB
Small Signal Gain
S21
24
25.5
—
dB
Reverse Isolation
S12
—
-41
-40
dB
Output Return Loss
S22
—
-18.8
-10
dB
Output 3rd Order Intercept Point
Power Output at 1 dB Gain Compression
Output 3rd Order Intercept Point
Power Output at 1 dB Gain Compression
MBC13917 Advance Information, Rev. 1.0
30
Freescale Semiconductor
Application Circuits
4.4
1900 MHz Application
This application was designed to provide NF = 2.0 dB, S21 gain > 14.5 dB, OIP3 of 8.5 dBm with return
losses better than -10 dB at 1900 MHz. Typical performance that can be expected from this circuit at 2.7V
is listed in Table 13.
Figure 19 is the 1900 MHz application schematic with package pinouts and the circuit component
topology.
L1
3.3 nH
C1
3.3 pF
Gnd
RF IN
1
6
2
5
L3
5.6 nH
Gnd
NC
3
C3
33 pF
L2
10 nH
C4
.1uF
RF
OUT
C2 2.7 pF
NC
4
.
Figure 19. 1900 MHz Application Schematic
Table 13 provides the typical performance of a 1900 MHz application.
Table 13. Typical 1900 MHz Evaluation Board Performance
Characteristic
1900 MHz
(Figure 19)
Vcc 2.7V
TA = 25°C
Symbol
Min
Typ
Max
Unit
Supply Current
Icc
—
4.7
5.6
mA
RF Gain
G
13.5
14.9
—
dB
Noise Figure
NF
—
1.8
2.15
dB
OIP3
7
8.5
—
dBm
P1dBoutput
-2.5
-1.1
—
dBm
Input Return Loss
S11
—
-13
-10
dB
Small Signal Gain
S21
13.8
14.8
—
dB
Reverse Isolation
S12
—
-42.5
-41.5
dB
Output Return Loss
S22
—
-11.8
-10
dB
Output 3rd Order Intercept Point
Power Output at 1.0 dB Gain Compression
MBC13917 Advance Information, Rev. 1.0
Freescale Semiconductor
31
Application Circuits
Table 13. Typical 1900 MHz Evaluation Board Performance (continued)
Characteristic
1900 MHz
(Figure 19)
Vcc 2.7V
TA = 85°C
1900 MHz
(Figure 19)
Vcc 2.7V
TA = -40°C
Symbol
Min
Typ
Max
Unit
Supply Current
Icc
—
5.3
6.2
mA
RF Gain
G
12.7
13.7
—
dB
Noise Figure
NF
—
2.5
2.85
dB
OIP3
7
8.3
—
dBm
P1dBoutput
-2.5
-1
—
dBm
Input Return Loss
S11
—
-10.7
-9
dB
Small Signal Gain
S21
12.6
13.6
—
dB
Reverse Isolation
S12
—
-41.7
-40.7
dB
Output Return Loss
S22
—
-13
-10
dB
Supply Current
Icc
—
4.3
5.2
mA
RF Gain
G
15.4
16.4
—
dB
Noise Figure
NF
—
1.48
1.8
dB
OIP3
7.1
8.1
—
dBm
P1dBoutput
-2.5
-1.3
—
dBm
Input Return Loss
S11
—
-14
-10
dB
Small Signal Gain
S21
15.1
16.1
—
dB
Reverse Isolation
S12
—
-41.5
-40.5
dB
Output Return Loss
S22
—
-10
-9
dB
Output 3rd Order Intercept Point
Power Output at 1.0 dB Gain Compression
Output 3rd Order Intercept Point
Power Output at 1.0 dB Gain Compression
MBC13917 Advance Information, Rev. 1.0
32
Freescale Semiconductor
Printed Circuit Board and Bill of Materials
5
Printed Circuit Board and Bill of Materials
Figure 20 is the drawing of the printed circuit board. Figure 21 through Figure 26 are drawings of the
evaluation boards used for each of the application frequency designs described in Section 4. These
drawings show the boards with the circuit matching components placed and identified.
Note: Dimensions are in inches and [mm].
Soldering Note: The center flag under the part must be soldered
down to ground on the board.
Figure 20. Printed Circuit Board
Figure 21 is a picture of a typical assembled evaluation board similar to the ones in the evaluation kits.
Figure 21. Typical Application Circuit Evaluation Board
MBC13917 Advance Information, Rev. 1.0
Freescale Semiconductor
33
Printed Circuit Board and Bill of Materials
Figure 22. 350 MHz Application Board Drawing
Figure 23. 434 MHz Application Board Drawing
Figure 24. 900 MHz Application Board Drawing
MBC13917 Advance Information, Rev. 1.0
34
Freescale Semiconductor
Printed Circuit Board and Bill of Materials
Figure 25. 1900 MHz Application Board Drawing
The Bill of Materials for the application frequency circuit boards is listed in Table 14. The value, case size,
manufacturer and circuit function of each component is provided.
Table 14. Bill of Materials for the Application Circuit Boards
350–370 MHz
Application Circuit
(Figure 23)
434 MHz
Application Circuit
(Figure 23)
Component
Value
Case
Manufacturer
Comments
C1
47 pF
402
Murata
Input match, DC block
C2
100 pF
402
Murata
350 MHz bypass
C3
0.1 uF
402
Murata
RF bypass
C4
3.6 pF
402
Murata
Output match, DC block
C5
3 pF
402
Murata
Output match
L1
39 nH
402
Murata
Input match
L2
47 nH
402
Murata
Output match, DC feed
R1
24 Ω
402
Murata
Lower gain, improve IP3, P1dB
C1
47 pF
402
Murata
DC Block, Input match
C2
100 pF
402
Murata
RF bypass
C3
0.1 uF
402
Murata
Low freq bypass to improve IP3
C4
2.4 pF
402
Murata
DC block, Output match
L1
39 nH
402
Murata
Input match
L2
33 nH
402
Murata
DC Feed through, Output match
R1
24 Ω
402
KOA
Lower gain, improve IP3, P1dB
MBC13917 Advance Information, Rev. 1.0
Freescale Semiconductor
35
Printed Circuit Board and Bill of Materials
Table 14. Bill of Materials for the Application Circuit Boards (continued)
900 MHz
Application Circuit
(Figure 24)
1900 MHz
Application Circuit
(Figure 24)
Component
Value
Case
Manufacturer
Comments
C1
47 pF
402
Murata
Input match, DC block
C2
47 pF
402
Murata
900 MHz bypass
C3
0.1 uF
402
Murata
RF bypass
C4
2 pF
402
Murata
Output match, DC block
C5
3 pF
402
Murata
Output match
L1
6.8 nH
402
Murata
Input match
L2
10 nH
402
Murata
Output match, DC feed
C1
3.3 pF
402
Murata
Input match, DC block
C2
2.7 pF
402
Murata
Output match, DC block
C3
33 pF
402
Murata
1900 MHz bypass
C4
0.1 uF
402
Murata
RF bypass
L1
3.3 nH
402
Murata
Input match
L2
10 nH
402
Murata
Output match, DC feed
L3
5.6 nH
402
Murata
Output match
MBC13917 Advance Information, Rev. 1.0
36
Freescale Semiconductor
Packaging
6
Packaging
Figure 26. Outline Dimensions for MLPD-6
MBC13917 Advance Information, Rev. 1.0
Freescale Semiconductor
37
Product Documentation
Figure 27. MLPD-6 Package Details
7
Product Documentation
This data sheet is labeled as a particular type: Product Preview, Advance Information, or Technical Data.
Definitions of these types are available at: http://www.freescale.com on the documentation page.
8
Revision History
Table 15. Revision History
Revision
1.0
Change Description
Initial Release
MBC13917 Advance Information, Rev. 1.0
38
Freescale Semiconductor
NOTES
MBC13917 Advance Information, Rev. 1.0
Freescale Semiconductor
39
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Document Number: MBC13917
Rev. 1.0
12/2010
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