Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MMG38151B
Rev. 1, 12/2014
BTS Driver
MMG38151BT1
Broadband Amplifier
The MMG38151BT1 is a general purpose amplifier that is internally
input and output matched. It is designed for a broad range of Class A,
small--signal, high linearity, general purpose applications. It is suitable
for applications with frequencies from 0 to 6000 MHz such as cellular,
PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small-signal RF.
0–6000 MHz, 17.1 dB @ 3800 MHz
13.4 dBm
BTS Driver
Features
 Frequency: 0 to 6000 MHz
 P1dB: 13.4 dBm @ 3800 MHz
 Small--Signal Gain: 17.1 dB @ 3800 MHz
 Third Order Output Intercept Point: 25.0 dBm @ 3800 MHz
 Single 5 V Supply
 Internally Matched to 50 Ohms
 Cost--effective SOT--89 Surface Mount Package
 In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.
SOT--89
Table 1. Typical Performance (1)
Characteristic
Symbol
900 MHz
2140 MHz
2700 MHz
3800 MHz
Unit
Gp
19.4
17.8
17.2
17.1
dB
Input Return Loss (S11)
IRL
--14.7
--16.8
--10.8
--11.0
dB
Output Return Loss (S22)
ORL
--22.0
--10.4
--8.7
--14.4
dB
Power Output @1dB Compression
P1dB
18.4
15.8
15.0
13.4
dBm
Third Order Output Intercept Point
OIP3
31.8
27.9
27.0
25.0
dBm
Small--Signal Gain (S21)
Table 2. Maximum Ratings
Rating
Symbol
Value
Unit
Supply Voltage
VCC
7
V
Supply Current
ICC
250
mA
RF Input Power
Pin
10
dBm
Storage Temperature Range
Tstg
--65 to +150
C
Junction Temperature
TJ
175
C
Symbol
Value (2)
Unit
RJC
57
C/W
Table 3. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 85C, 5 Vdc, 50 mA, no RF applied
1. VCC = 5 Vdc, TA = 25C, 50 ohm system.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
 Freescale Semiconductor, Inc., 2014. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MMG38151BT1
1
Table 4. Electrical Characteristics (VCC = 5 Vdc, 900 MHz, TA = 25C, 50 ohm system, in Freescale Application Circuit)
Symbol
Min
Typ
Max
Unit
Small--Signal Gain (S21)
Characteristic
Gp
18
19.4
—
dB
Input Return Loss (S11)
IRL
—
--14.7
—
dB
Output Return Loss (S22)
ORL
—
--22.0
—
dB
Power Output @ 1dB Compression
P1dB
—
18.4
—
dBm
Third Order Output Intercept Point
OIP3
—
31.8
—
dBm
Noise Figure
NF
—
3.2
—
dB
Supply Current
ICC
39
47
55
mA
Supply Voltage
VCC
—
5
—
V
Table 5. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD 22--A114)
1A
Machine Model (per EIA/JESD 22--A115)
A
Charge Device Model (per JESD 22--C101)
IV
Table 6. Moisture Sensitivity Level
Test Methodology
Per JESD 22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
1
260
C
Table 7. Functional Pin Description
Pin
Number
2
Pin Function
1
RFin
2
Ground
3
RFout/DC Supply
1
2
3
Figure 1. Functional Diagram
MMG38151BT1
2
RF Device Data
Freescale Semiconductor, Inc.
50 OHM APPLICATION CIRCUIT: 300--6000 MHz
VSUPPLY
R1
C3
C4
L1
RF
INPUT
Z1
DUT
Z2
C1
Z1, Z5
Z2
Z3
Z4
Z5
RF
OUTPUT
C2
VCC
0.347 x 0.058 Microstrip
0.575 x 0.058 Microstrip
Z3
Z4
0.172 x 0.058 Microstrip
0.403 x 0.058 Microstrip
Figure 2. 50 Ohm Test Circuit Schematic
D43570
R1
L1
C4
C3
C2
C1
MMG30XX
Rev. 2
PCB actual size: 2  1.25.
Figure 3. 50 Ohm Test Circuit Component Layout
Table 8. 50 Ohm Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2
150 pF Chip Capacitors
C0603C151J5RAC
Kemet
C3
0.01 F Chip Capacitor
C0603C103J5RAC
Kemet
C4
1000 pF Chip Capacitor
C0603C102J5RAC
Kemet
L1
56 nH Chip Inductor
HK160856NJ--T
Taiyo Yuden
R1
0 Ω Chip Resistor
ERJ3GEY0R00V
Panasonic
PCB
Getek Grade ML200C, 0.031, r = 4.1
D43570
MTL
MMG38151BT1
RF Device Data
Freescale Semiconductor, Inc.
3
50 OHM TYPICAL CHARACTERISTICS: 300--6000 MHz
0
S22
22
--10
TC = --40C
19
S11, S22 (dB)
Gp, SMALL--SIGNAL GAIN (dB)
25
85C
16
25C
--20
--30
13
S11
VCC = 5 Vdc
10
--40
1
2
4
3
5
1
2
3
5
4
f, FREQUENCY (GHz)
f, FREQUENCY (GHz)
Figure 4. Small--Signal Gain (S21) versus
Frequency
Figure 5. Input/Output Return Loss versus
Frequency
20
P1dB, 1 dB COMPRESSION POINT (dBm)
0
6
17
14
11
8
VCC = 5 Vdc
5
0
1
2
3
4
5
f, FREQUENCY (GHz)
OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
0
6
33
30
27
24
21
VCC = 5 Vdc
1 MHz Tone Spacing
18
1
0
2
3
5
4
f, FREQUENCY (GHz)
Figure 7. Third Order Output Intercept Point
versus Frequency
Figure 6. P1dB versus Frequency
5
23
4
20
Gp, GAIN (dB)
NF, NOISE FIGURE (dB)
VCC = 5 Vdc
3
2
2140 MHz
900 MHz
17
2700 MHz
3800 MHz
14
11
1
VCC = 5 Vdc
VCC = 5 Vdc
8
0
0
1
2
3
4
5
6
1
4
7
10
13
16
f, FREQUENCY (GHz)
Pout, OUTPUT POWER (dBm)
Figure 8. Noise Figure versus Frequency
Figure 9. Gain versus Output Power
19
MMG38151BT1
4
RF Device Data
Freescale Semiconductor, Inc.
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
50 OHM TYPICAL CHARACTERISTICS: 300--6000 MHz
--20
VCC = 5 Vdc
f = 2140 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01% Probability (CCDF)
--30
--40
--50
--60
--70
--10
--6
--2
2
6
10
Pout, OUTPUT POWER (dBm)
Figure 10. Single--Carrier W--CDMA Adjacent
Channel Power Ratio versus Output Power
MMG38151BT1
RF Device Data
Freescale Semiconductor, Inc.
5
1.90
3.00
2X
45
4.35
2X
1.25
3X
0.70
0.85
2X
1.50
Figure 11. PCB Pad Layout for SOT--89A
M38151
AWLYWZ
Figure 12. Product Marking
MMG38151BT1
6
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
MMG38151BT1
RF Device Data
Freescale Semiconductor, Inc.
7
MMG38151BT1
8
RF Device Data
Freescale Semiconductor, Inc.
MMG38151BT1
RF Device Data
Freescale Semiconductor, Inc.
9
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
 AN3100: General Purpose Amplifier and MMIC Biasing
Software
 .s2p File
Development Tools
 Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
FAILURE ANALYSIS
At this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis. In
cases where Freescale is contractually obligated to perform failure analysis (FA) services, full FA may be performed by third
party vendors with moderate success. For updates contact your local Freescale Sales Office.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
July 2014
 Initial Release of Data Sheet.
1
Dec. 2014
 Table 3, Thermal Characteristics: changed case temperature from 78C to 85C and thermal resistance
from 55C/W to 57C/W to reflect recent thermal resistance measurements, p. 1
MMG38151BT1
10
RF Device Data
Freescale Semiconductor, Inc.
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E 2014 Freescale Semiconductor, Inc.
MMG38151BT1
Document
Number: MMG38151B
RF Device
Data
Rev. 1,Freescale
12/2014
Semiconductor,
Inc.
11