Freescale Semiconductor Technical Data NOT RECOMMENDED FOR NEW DESIGN Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier MMG3001NT1 The MMG3001NT1 is a General Purpose Amplifier that is internally input and output matched. It is designed for a broad range of Class A, small - signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 40 to 3600 MHz such as Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small - signal RF. 40 - 3600 MHz, 20 dB 18.5 dBm InGaP HBT Features • Frequency: 40 - 3600 MHz • P1dB: 18.5 dBm @ 900 MHz • Small - Signal Gain: 20 dB @ 900 MHz • Third Order Output Intercept Point: 32 dBm @ 900 MHz • Single Voltage Supply • Internally Matched to 50 Ohms • Low Cost SOT - 89 Surface Mount Package • RoHS Compliant • In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. Table 1. Typical Performance (1) Characteristic 3 CASE 1514 - 02, STYLE 1 SOT - 89 PLASTIC Table 2. Maximum Ratings Symbol 900 MHz 2140 MHz 3500 MHz Unit Small - Signal Gain (S21) Gp 20 18 16 dB Input Return Loss (S11) IRL - 25 - 25 - 19 dB Output Return Loss (S22) ORL Power Output @1dB Compression P1db 18.5 18 15.5 dBm IP3 32 31 28.5 dBm Third Order Output Intercept Point 12 - 22 - 18 - 17 dB Rating Symbol Value Unit Supply Voltage VCC 7 V Supply Current ICC 300 mA RF Input Power Pin 10 dBm Tstg - 65 to +150 °C TJ 150 °C Storage Temperature Range Junction Temperature (2) 2. For reliable operation, the junction temperature should not exceed 150°C. 1. VCC = 5.6 Vdc, TC = 25°C, 50 ohm system Table 3. Thermal Characteristics (VCC = 5.6 Vdc, ICC = 58 mA, TC = 25°C) Characteristic Thermal Resistance, Junction to Case Symbol Value (3) Unit RθJC 92.0 °C/W 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2004-2008. All rights reserved. RF Device Data Freescale Semiconductor NOT RECOMMENDED FOR NEW DESIGN Document Number: MMG3001NT1 Rev. 7, 3/2008 MMG3001NT1 1 Characteristic Symbol Min Typ Max Unit Gp 18 20 — dB Input Return Loss (S11) IRL — - 25 — dB Output Return Loss (S22) ORL — - 22 — dB Power Output @ 1dB Compression P1dB — 18.5 — dBm Third Order Output Intercept Point IP3 — 32 — dBm Noise Figure NOT RECOMMENDED FOR NEW DESIGN Small - Signal Gain (S21) NF — 4.1 — dB Supply Current (1) ICC 40 58 75 mA Supply Voltage (1) VCC — 5.6 — V 1. For reliable operation, the junction temperature should not exceed 150°C. NOT RECOMMENDED FOR NEW DESIGN Table 4. Electrical Characteristics (VCC= 5.6 Vdc, 900 MHz, TC = 25°C, 50 ohm system, in Freescale Application Circuit) MMG3001NT1 2 RF Device Data Freescale Semiconductor Table 5. Functional Pin Description 2 Pin Function 1 RFin 2 Ground 3 RFout/DC Supply 1 2 3 Figure 1. Functional Diagram Table 6. ESD Protection Characteristics Test Conditions/Test Methodology Class Human Body Model (per JESD 22 - A114) 0 (Minimum) Machine Model (per EIA/JESD 22 - A115) A (Minimum) Charge Device Model (per JESD 22 - C101) IV (Minimum) Table 7. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 1 260 °C NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN Pin Number MMG3001NT1 RF Device Data Freescale Semiconductor 3 50 OHM TYPICAL CHARACTERISTICS TC = 85°C 25°C 20 - 40°C 15 S22 −20 S11 −30 VCC = 5.6 Vdc ICC = 58 mA 10 −40 0 1 2 3 0 4 2 3 4 f, FREQUENCY (GHz) Figure 2. Small - Signal Gain (S21) versus Frequency Figure 3. Input/Output Return Loss versus Frequency 23 21 21 900 MHz 19 1960 MHz 17 2140 MHz P1dB, 1 dB COMPRESSION POINT (dBm) Gp, SMALL−SIGNAL GAIN (dB) 1 f, FREQUENCY (GHz) 2600 MHz 3500 MHz 15 13 VCC = 5.6 Vdc ICC = 58 mA 11 9 20 19 18 17 16 15 VCC = 5.6 Vdc ICC = 58 mA 14 12 10 14 16 18 1 1.5 2 2.5 3 f, FREQUENCY (GHz) Figure 4. Small - Signal Gain versus Output Power Figure 5. P1dB versus Frequency 80 60 40 20 0 5 5.1 5.2 5.3 5.4 5.5 5.6 5.7 IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) Pout, OUTPUT POWER (dBm) 100 4.9 0.5 20 3.5 33 30 27 24 VCC = 5.6 Vdc ICC = 58 mA 100 kHz Tone Spacing 21 18 0 1 2 3 VCC, COLLECTOR VOLTAGE (V) f, FREQUENCY (GHz) Figure 6. Collector Current versus Collector Voltage Figure 7. Third Order Output Intercept Point versus Frequency NOT RECOMMENDED FOR NEW DESIGN −10 S11, S22 (dB) Gp, SMALL−SIGNAL GAIN (dB) 0 VCC = 5.6 Vdc ICC, COLLECTOR CURRENT (mA) NOT RECOMMENDED FOR NEW DESIGN 25 4 MMG3001NT1 4 RF Device Data Freescale Semiconductor 33 30 27 24 f = 900 MHz 100 kHz Tone Spacing 21 5.55 5.5 5.6 5.65 5.7 VCC, COLLECTOR VOLTAGE (V) 36 VCC = 5.6 Vdc f = 900 MHz 100 kHz Tone Spacing 8 Vdc Supply with 43 W Dropping Resistor 35 34 33 32 31 30 −40 0 20 40 60 80 100 T, TEMPERATURE (_C) Figure 9. Third Order Output Intercept Point versus Case Temperature 105 −30 −40 MTTF (YEARS) IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) −20 −50 −60 104 VCC = 5.6 Vdc ICC = 58 mA f = 900 MHz 100 kHz Tone Spacing −70 103 −80 0 3 6 9 12 15 120 18 125 Pout, OUTPUT POWER (dBm) Figure 10. Third Order Intermodulation versus Output Power 6 4 2 VCC = 5.6 Vdc ICC = 58 mA 0 0.5 1 1.5 2 2.5 3 135 140 145 150 3.5 NOTE: The MTTF is calculated with VCC = 5.6 Vdc, ICC = 58 mA Figure 11. MTTF versus Junction Temperature ACPR, ADJACENT CHANNEL POWER RATIO (dBc) 8 0 130 TJ, JUNCTION TEMPERATURE (°C) 4 −20 VCC = 5.6 Vdc, ICC = 58 mA, f = 2140 MHz Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF) −30 −40 −50 −60 NOT RECOMMENDED FOR NEW DESIGN IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 36 Figure 8. Third Order Output Intercept Point versus Collector Voltage NF, NOISE FIGURE (dB) NOT RECOMMENDED FOR NEW DESIGN 50 OHM TYPICAL CHARACTERISTICS −70 0 2 4 6 8 10 12 f, FREQUENCY (GHz) Pout, OUTPUT POWER (dBm) Figure 12. Noise Figure versus Frequency Figure 13. Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power 14 MMG3001NT1 RF Device Data Freescale Semiconductor 5 50 OHM APPLICATION CIRCUIT: 40- 800 MHz VSUPPLY C3 C4 C5 L1 RF INPUT Z1 DUT Z2 C1 Z1, Z5 Z2 Z3 Z3 Z4 RF OUTPUT Z5 VCC C2 0.347″ x 0.058″ Microstrip 0.575″ x 0.058″ Microstrip 0.172″ x 0.058″ Microstrip Z4 PCB 0.403″ x 0.058″ Microstrip Getek Grade ML200C, 0.031″, εr = 4.1 Figure 14. 50 Ohm Test Circuit Schematic 30 S21 20 R1 S21, S11, S22 (dB) 10 C5 C4 C3 0 L1 −10 C2 C1 S22 −20 −30 VCC = 5.6 Vdc ICC = 58 mA S11 −40 0 200 400 600 MMG30XX Rev 2 800 f, FREQUENCY (MHz) Figure 15. S21, S11 and S22 versus Frequency Figure 16. 50 Ohm Test Circuit Component Layout Table 8. 50 Ohm Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2, C3 0.01 μF Chip Capacitors C0603C103J5RAC Kemet C4 1000 pF Chip Capacitor C0603C102J5RAC Kemet C5 47 pF Chip Capacitor C0805C470J5RAC Kemet L1 470 nH Chip Inductor BK2125HM471 - T Taiyo Yuden R1 8.2 W Chip Resistor RK73B2ATTE8R2J KOA Speer Table 9. Supply Voltage versus R1 Values Supply Voltage 6 7 8 9 10 11 12 V R1 Value 6.9 24 41 59 76 93 110 Ω Note: To provide VCC = 5.6 Vdc and ICC = 58 mA at the device. NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN R1 MMG3001NT1 6 RF Device Data Freescale Semiconductor 50 OHM APPLICATION CIRCUIT: 800- 3600 MHz VSUPPLY C4 C5 L1 RF INPUT Z1 Z2 DUT C1 Z1, Z5 Z2 Z3 Z3 Z4 Z5 VCC 0.347″ x 0.058″ Microstrip 0.575″ x 0.058″ Microstrip 0.172″ x 0.058″ Microstrip RF OUTPUT C2 Z4 PCB 0.403″ x 0.058″ Microstrip Getek Grade ML200C, 0.031″, εr = 4.1 Figure 17. 50 Ohm Test Circuit Schematic 20 S21 10 R1 VCC = 5.6 Vdc ICC = 58 mA C5 C4 C3 0 L1 C2 C1 −10 −20 S22 MMG30XX Rev 2 S11 −30 800 1300 1800 2300 2800 3300 3800 f, FREQUENCY (MHz) Figure 18. S21, S11 and S22 versus Frequency Figure 19. 50 Ohm Test Circuit Component Layout Table 10. 50 Ohm Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 39 pF Chip Capacitors C0805C390J5RAC Kemet C3 0.01 μF Chip Capacitor C0603C103J5RAC Kemet C4 1000 pF Chip Capacitor C0603C102J5RAC Kemet C5 47 pF Chip Capacitor C0805C470J5RAC Kemet L1 56 nH Chip Inductor HK160856NJ - T Taiyo Yuden R1 8.2 W Chip Resistor RK73B2ATTE8R2J KOA Speer NOT RECOMMENDED FOR NEW DESIGN C3 S21, S11, S22 (dB) NOT RECOMMENDED FOR NEW DESIGN R1 MMG3001NT1 RF Device Data Freescale Semiconductor 7 50 OHM TYPICAL CHARACTERISTICS S11 S21 S12 S22 f MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 100 0.01837 0.158 10.80154 176.164 0.06918 0.196 0.04789 11.134 150 0.00937 - 92.445 10.61985 173.508 0.06785 - 0.796 0.05071 - 49.334 200 0.02263 96.518 11.06276 170.083 0.07095 - 2.253 0.07322 - 17.196 250 0.02049 101.715 10.97614 167.952 0.07046 - 2.513 0.06689 - 28.31 300 0.02015 91.299 10.93416 165.552 0.07052 - 2.899 0.07111 - 35.935 350 0.01939 77.961 10.89886 163.145 0.07044 - 3.499 0.07696 - 41.106 400 0.0212 71.36 10.85777 160.903 0.07055 - 3.885 0.08093 - 47.831 450 0.02169 63.516 10.81348 158.599 0.07053 - 4.455 0.08609 - 52.772 500 0.02447 55.112 10.76682 156.269 0.07056 - 4.766 0.09084 - 57.016 550 0.02643 49.889 10.71841 154.026 0.07058 - 5.297 0.09479 - 60.897 600 0.02857 47.303 10.67367 151.767 0.07057 - 5.783 0.09752 - 65.139 650 0.03094 43.937 10.61782 149.477 0.07066 - 6.195 0.1016 - 69.112 700 0.03356 42.055 10.56473 147.215 0.07064 - 6.702 0.10489 - 72.747 750 0.03495 40.001 10.50489 144.98 0.07073 - 7.082 0.10746 - 76.469 800 0.03599 38.298 10.44613 142.748 0.07084 - 7.625 0.11046 - 80.336 850 0.03675 36.713 10.38955 140.536 0.07089 - 8.108 0.11345 - 84.309 900 0.0378 34.449 10.32195 138.333 0.07106 - 8.539 0.11524 - 88.629 950 0.04014 35.697 10.26867 136.075 0.07101 - 8.95 0.11712 - 93.045 1000 0.03975 34.93 10.19351 133.939 0.07128 - 9.497 0.11971 - 97.401 1050 0.04101 35.048 10.13374 131.742 0.07142 - 10.015 0.12057 - 101.389 1100 0.0413 34.972 10.05555 129.606 0.07148 - 10.588 0.12293 - 106.494 1150 0.04078 36.31 9.98381 127.42 0.07156 - 10.989 0.12475 - 111.339 1200 0.04045 38.732 9.90685 125.299 0.07171 - 11.51 0.12702 - 115.996 1250 0.04005 39.914 9.83535 123.178 0.07179 - 12.025 0.12882 - 120.553 1300 0.03952 43.011 9.76304 121.077 0.07197 - 12.554 0.13202 - 125.245 1350 0.03786 44.538 9.68157 118.951 0.07208 - 13.057 0.13502 - 129.596 1400 0.03796 46.354 9.60628 116.874 0.07224 - 13.606 0.13836 - 133.849 1450 0.03675 48.792 9.52474 114.777 0.07243 - 14.151 0.14227 - 138.332 1500 0.03229 27.259 9.45514 112.739 0.07269 - 14.685 0.13499 - 140.027 1550 0.03309 25.231 9.36984 110.697 0.0728 - 15.204 0.13808 - 143.203 1600 0.03475 23.271 9.29518 108.724 0.07296 - 15.823 0.14111 - 146.041 1650 0.0367 22.494 9.2159 106.764 0.07327 - 16.372 0.14376 - 149.267 1700 0.03803 21.485 9.15729 104.763 0.07341 - 16.955 0.14728 - 152.506 1750 0.03976 21.793 9.07502 102.811 0.07361 - 17.538 0.14882 - 155.031 1800 0.04035 21.332 9.00137 100.821 0.07373 - 18.047 0.15301 - 157.889 1850 0.04093 21.941 8.92666 98.873 0.07383 - 18.59 0.15553 - 160.786 1900 0.0409 20.661 8.84934 96.931 0.07407 - 19.216 0.1587 - 163.24 1950 0.04127 17.824 8.75854 95.008 0.07433 - 19.75 0.1617 - 165.666 2000 0.04055 20.129 8.69148 93.046 0.07451 - 20.324 0.1659 - 168.355 2050 0.04148 18.841 8.6161 91.185 0.07482 - 20.966 0.16929 - 170.838 2100 0.04198 18.596 8.5446 89.293 0.07498 - 21.435 0.17351 - 173.6 2150 0.04249 18.599 8.47505 87.398 0.07512 - 22.217 0.17715 - 176.054 2200 0.04309 19.388 8.39794 85.501 0.07543 - 22.79 0.18032 - 178.865 2250 0.04316 19.789 8.32788 83.624 0.0756 - 23.41 0.18422 178.51 NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN Table 11. Common Emitter S - Parameters (VCC = 5.6 Vdc, ICC = 58 mA, TC = 25°C, 50 Ohm System) (continued) MMG3001NT1 8 RF Device Data Freescale Semiconductor 50 OHM TYPICAL CHARACTERISTICS S11 S21 S12 S22 f MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 2300 0.04326 21.542 8.24837 81.777 0.07591 - 24.034 0.1871 175.803 2350 0.04285 23.93 8.17883 79.926 0.0761 - 24.632 0.19081 173.166 2400 0.0428 25.661 8.10402 78.094 0.07638 - 25.226 0.19358 170.371 2450 0.04222 28.349 8.0349 76.296 0.07665 - 25.841 0.19769 167.872 2500 0.04157 30.594 7.96381 74.438 0.07693 - 26.474 0.20079 164.997 2550 0.04062 32.718 7.89112 72.648 0.07715 - 27.199 0.20422 162.204 2600 0.04117 35.498 7.83503 70.815 0.07744 - 27.904 0.20869 159.371 2650 0.0407 39.668 7.76263 69.011 0.07768 - 28.528 0.21293 156.39 2700 0.04099 40.736 7.68838 67.13 0.07806 - 29.281 0.21614 153.567 2750 0.04248 44.129 7.62088 65.378 0.07826 - 29.943 0.22114 150.373 2800 0.04329 47.509 7.55264 63.561 0.0785 - 30.741 0.226 147.517 2850 0.04466 51.043 7.48275 61.767 0.07867 - 31.392 0.23048 144.417 2900 0.04661 53.041 7.41535 60.019 0.07893 - 32.182 0.23581 141.675 2950 0.04876 57.415 7.34593 58.235 0.07915 - 32.903 0.24106 138.661 3000 0.04991 59.701 7.28251 56.493 0.07945 - 33.641 0.24698 136.002 3050 0.05208 61.593 7.21536 54.703 0.07976 - 34.4 0.25213 133.272 3100 0.05426 64.102 7.1502 52.913 0.07989 - 35.181 0.25854 130.712 3150 0.05536 65.235 7.08162 51.15 0.08017 - 35.962 0.26426 128.119 3200 0.05758 65.884 7.01653 49.405 0.08027 - 36.771 0.27078 125.669 3250 0.06021 66.564 6.94732 47.655 0.08054 - 37.539 0.27729 123.284 3300 0.06243 66.702 6.88222 45.916 0.08071 - 38.36 0.28468 120.844 3350 0.06498 65.787 6.81808 44.235 0.08097 - 39.051 0.29005 118.633 3400 0.06832 65.869 6.75612 42.521 0.08112 - 39.867 0.29718 116.391 3450 0.07049 65.731 6.69433 40.809 0.08128 - 40.621 0.3026 114.187 3500 0.07294 65.097 6.63494 39.085 0.08144 - 41.453 0.30819 112.291 3550 0.07565 65.299 6.57111 37.382 0.08171 - 42.369 0.31389 110.431 3600 0.07682 64.978 6.51018 35.707 0.08186 - 43.091 0.31878 108.662 NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN Table 11. Common Emitter S - Parameters (VCC = 5.6 Vdc, ICC = 58 mA, TC = 25°C, 50 Ohm System) (continued) MMG3001NT1 RF Device Data Freescale Semiconductor 9 1.7 7.62 0.305 diameter NOT RECOMMENDED FOR NEW DESIGN 5.33 2.54 1.27 1.27 0.58 0.86 0.64 3.86 Recommended Solder Stencil NOTES: 1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE USED IN PCB LAYOUT DESIGN. 2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN. 3. IF VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THEN AS MANY VIAS AS POSSIBLE SHOULD BE PLACED AS CLOSE TO THE LANDING PATTERN AS POSSIBLE FOR OPTIMAL THERMAL AND RF PERFORMANCE. 4. RECOMMENDED VIA PATTERN SHOWN HAS 0.381 x 0.762 MM PITCH. Figure 20. Recommended Mounting Configuration NOT RECOMMENDED FOR NEW DESIGN 2.49 3.48 MMG3001NT1 10 RF Device Data Freescale Semiconductor NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN PACKAGE DIMENSIONS MMG3001NT1 RF Device Data Freescale Semiconductor 11 MMG3001NT1 12 RF Device Data Freescale Semiconductor NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN MMG3001NT1 RF Device Data Freescale Semiconductor 13 NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 5 Mar. 2007 • Corrected and updated Part Numbers in Tables 8 and 10, Component Designations and Values, to RoHS compliant part numbers, p. 6, 7 6 July 2007 • Replaced Case Outline 1514 - 01 with 1514 - 02, Issue D, p. 1, 11 - 13. Case updated to add missing dimension for Pin 1 and Pin 3. 7 Mar. 2008 • Removed Footnote 2, Continuous voltage and current applied to device, from Table 2, Maximum Ratings, p. 1 • Corrected Fig. 13, Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power y - axis (ACPR) unit of measure to dBc, p. 5 • Corrected S - Parameter table frequency column label to read “MHz” versus “GHz” and corrected frequency values from GHz to MHz, p. 8, 9 NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3100: General Purpose Amplifier Biasing MMG3001NT1 14 RF Device Data Freescale Semiconductor Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2004-2008. All rights reserved. NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN How to Reach Us: MMG3001NT1 Document Number: RF Device Data MMG3001NT1 Rev. 7, 3/2008 Freescale Semiconductor 15