Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MMG3006NT1
Rev. 5, 9/2014
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
MMG3006NT1
Broadband High Linearity Amplifier
The MMG3006NT1 is a general purpose amplifier that is internally input
prematched and designed for a broad range of Class A, small--signal, high
linearity, general purpose applications. It is suitable for applications with
frequencies from 400 to 2400 MHz such as cellular, PCS, WLL, PHS,
VHF, UHF, UMTS and general small--signal RF.
400--2400 MHz, 17.5 dB
33 dBm
InGaP HBT GPA
Features
 Frequency: 400--2400 MHz
 P1dB: 33 dBm @ 900 MHz
 Small--Signal Gain: 17.5 dB @ 900 MHz
 Third Order Output Intercept Point: 49 dBm @ 900 MHz
 Single 5 V Supply
 Internally Input Prematched to 50 Ohms
 In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 13--inch Reel.
Table 1. Typical Performance (1)
Table 2. Maximum Ratings
Rating
Symbol
900
MHz
1960
MHz
2140
MHz
Unit
Small--Signal Gain
(S21)
Gp
17.5
14
14
dB
Input Return Loss
(S11)
IRL
--8
--9
--12
dB
Output Return Loss
(S22)
ORL
--13
--14
--18
dB
Power Output @1dB
Compression
P1db
33
33
33
dBm
Third Order Output
Intercept Point
OIP3
49
49
49
dBm
Characteristic
QFN 4  4
Symbol
Value
Unit
Supply Voltage
VDC
6
V
Supply Current
IDC
1400
mA
RF Input Power
Pin
28
dBm
Storage Temperature Range
Tstg
--65 to +150
C
Junction Temperature
TJ
175
C
1. VDC = 5 Vdc, TA = 25C, 50 ohm system, application circuit
tuned for specified frequency.
Table 3. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 89C, 5 Vdc, 850 mA, no RF applied
Symbol
Value (2)
Unit
RJC
7.8
C/W
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
 Freescale Semiconductor, Inc., 2008, 2010--2011, 2014. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MMG3006NT1
1
Table 4. Electrical Characteristics (VDC = 5 Vdc, 900 MHz, TA = 25C, 50 ohm system, in Freescale Application Circuit)
Symbol
Min
Typ
Max
Unit
Small--Signal Gain (S21)
Gp
16.5
17.5
—
dB
Input Return Loss (S11)
IRL
—
--8
—
dB
Output Return Loss (S22)
ORL
—
--13
—
dB
Power Output @ 1dB Compression
P1dB
—
33
—
dBm
Third Order Output Intercept Point
OIP3
—
49
—
dBm
Characteristic
Noise Figure
NF
—
6.6
—
dB
Supply Current
IDC
760
850
960
mA
Supply Voltage
VDC
—
5
—
V
Table 5. Functional Pin Description
Name
Pin
Number
VBA
1
RFin
2, 3, 4
RF input for the power amplifier. This pin is DC--coupled and
requires a DC--blocking series capacitor.
RFout/
VCC
9, 10,
11, 12
RF output for the power amplifier. This pin is DC--coupled
and requires a DC--blocking series capacitor.
VCC
16
GND
Backside
Center
Metal
VCC N.C. N.C. N.C.
Description
16 15 14 13
Bias voltage supply.
VBA 1
12 RFout/VCC
RFin 2
RFin 3
11 RFout/VCC
10 RFout/VCC
RFin 4
9
5
Collector voltage supply.
The center metal base of the QFN package provides both
DC and RF ground as well as heat sink contact for the
power amplifier.
6
7
RFout/VCC
8
N.C. N.C. N.C. N.C.
(Top View)
Figure 1. Pin Connections
Table 6. ESD Protection Characteristics
Test Conditions/Test Methodology
Class
Human Body Model (per JESD 22--A114)
1C
Machine Model (per EIA/JESD 22--A115)
A
Charge Device Model (per JESD 22--C101)
IV
Table 7. Moisture Sensitivity Level
Test Methodology
Per JESD 22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
1
260
C
MMG3006NT1
2
RF Device Data
Freescale Semiconductor, Inc.
106
55
720 mA
50
IDC = 850 mA
45
MTTF (YEARS)
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
50 OHM TYPICAL CHARACTERISTICS
570 mA
40
35
30
105
104
VDC = 5 Vdc
f1 = 1829 MHz
f2 = 1830 MHz
25
103
20
15
20
25
30
35
120
125
130
135
140
145
Pout, OUTPUT POWER (dBm)
TJ, JUNCTION TEMPERATURE (C)
NOTE: Supply current is varied under external resistor control. Peak power
is not reduced at any listed current. Similar results can be obtained for other
frequency bands.
NOTE: The MTTF is calculated with VDC = 5 Vdc, IDC = 850 mA
150
Figure 3. MTTF versus Junction Temperature
Figure 2. Third Order Output Intercept Point
versus Output Power and Supply Current
MMG3006NT1
RF Device Data
Freescale Semiconductor, Inc.
3
50 OHM APPLICATION CIRCUIT: 900 MHz
VSUPPLY
R1
RF
INPUT
16
C4
C3
R3
R2
1
Z1
Z2
Z3
Z4
Z5
15
2
C8
C9
6
7
C6
Z7
Z8
C7
Z9
10
DUT
5
Z1
Z2, Z9, Z10
Z3
Z4
Z5
Z6
11
4
C5
L1
12
Current Mirror
3
C1
14 13
Z10
Z11
RF
OUTPUT
C2
9
C10
C11
8
0.140 x 0.028 Microstrip
0.044 x 0.028 Microstrip
0.169 x 0.028 Microstrip
0.177 x 0.028 Microstrip
0.026 x 0.053 Microstrip
Z6
Z7
Z8
Z11
PCB
0.026 x 0.089 Microstrip
0.167 x 0.028 Microstrip
0.178 x 0.028 Microstrip
0.096 x 0.028 Microstrip
Isola FR408, 0.014, r = 3.7
Figure 4. 50 Ohm Test Circuit Schematic
Table 8. 50 Ohm Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2
15 pF Chip Capacitors
ECUV1H150JCV
Panasonic
C3, C6
0.01 F Chip Capacitors
C0603C103J5RAC
Kemet
C4, C7
0.1 F Chip Capacitors
C0603C104J5RAC
Kemet
C5
2.2 F Chip Capacitor
T491A225K016AT
Kemet
C8
6.8 pF Chip Capacitor
06035J6R8BS
AVX
C9, C11
3.9 pF Chip Capacitors
06035J3R9BS
AVX
C10
5.6 pF Chip Capacitor
06035J5R6BS
AVX
L1
15 nH Chip Inductor
1008CS--150XJB
Coilcraft
R1
100 , 1/4 W Chip Resistor
ERJ8GEYJ101V
Panasonic
R2, R3
0 , 1/10 W Chip Resistors
CRCW06030000FKEA
Vishay
MMG3006NT1
4
RF Device Data
Freescale Semiconductor, Inc.
50 OHM APPLICATION CIRCUIT: 900 MHz
VBA
VSUPPLY
C5
R2
C3
C4
C6
R1
C7
R3
L1
RFin
RFout
C2
C1
C8
C9
C10
C11
MMG3006N Rev 4
Figure 5. 50 Ohm Test Circuit Component Layout
MMG3006NT1
RF Device Data
Freescale Semiconductor, Inc.
5
50 OHM TYPICAL CHARACTERISTICS: 900 MHz
--5
18
16
IRL, INPUT RETURN LOSS (dB)
Gp, SMALL--SIGNAL GAIN (dB)
20
TC = --40C
85C
25C
14
12
--6
TC = --40C
--7
85C
25C
--8
--9
VDC = 5 Vdc
VDC = 5 Vdc
10
840
870
900
930
--10
840
960
960
Figure 7. Input Return Loss (S11) versus
Frequency
P1dB, 1 dB COMPRESSION POINT (dBm)
40
TC = --40C
--10
--15
25C
85C
--20
VDC = 5 Vdc
870
900
930
85C
35
30
25C
TC = --40C
25
VDC = 5 Vdc
20
840
960
870
900
930
960
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 8. Output Return Loss (S22) versus
Frequency
Figure 9. P1dB versus Frequency
52
10
TC = --40C
48
8
25C
NF, NOISE FIGURE (dB)
ORL, OUTPUT RETURN LOSS (dB)
930
Figure 6. Small--Signal Gain (S21) versus
Frequency
--25
840
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
900
f, FREQUENCY (MHz)
--5
50
870
f, FREQUENCY (MHz)
85C
46
TC = 85C
--40C
6
25C
4
2
44
VDC = 5 Vdc
1 MHz Tone Spacing
42
840
870
900
930
VDC = 5 Vdc
960
0
840
870
900
930
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 10. Third Order Output Intercept
Point versus Frequency
Figure 11. Noise Figure versus Frequency
960
MMG3006NT1
6
RF Device Data
Freescale Semiconductor, Inc.
--25
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
50 OHM TYPICAL CHARACTERISTICS: 900 MHz
VDC = 5 Vdc, f = 900 MHz
Single--Carrier IS--95, 9 Channel Forward
750 kHz Measurement Offset
30 kHz Measurement Bandwidth
--30
--35
--40
TC = --40C
--45
--50
25C
85C
--55
24
26
28
30
32
--30
VDC = 5 Vdc, f = 900 MHz
Single--Carrier IS--95, 9 Channel Forward
885 kHz Measurement Offset
30 kHz Measurement Bandwidth
--35
--40
--45
TC = --40C
--50
25C
85C
--55
--60
24
26
28
30
32
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
Figure 12. IS--95 Adjacent Channel Power Ratio
versus Output Power
Figure 13. IS--95 Adjacent Channel Power Ratio
versus Output Power
MMG3006NT1
RF Device Data
Freescale Semiconductor, Inc.
7
50 OHM APPLICATION CIRCUIT: 1960 MHz
VSUPPLY
R1
C4
C3
RF
INPUT
R3
R2
16
1
Z1
Z2
Z3
Z4
Z5
15
2
11
C8
C9
5
Z1, Z11
Z2
Z3
Z4
Z5
Z6
6
7
0.140 x 0.028 Microstrip
0.268 x 0.028 Microstrip
0.084 x 0.028 Microstrip
0.038 x 0.028 Microstrip
0.026 x 0.053 Microstrip
0.026 x 0.089 Microstrip
Z6
Z7
Z8
Z9
Z10
10
DUT
4
C6
C7
L1
12
Current Mirror
3
C1
C5
14 13
Z11
RF
OUTPUT
C2
9
C10
C11
8
Z7
Z8
Z9
Z10
PCB
0.041 x 0.028 Microstrip
0.093 x 0.028 Microstrip
0.033 x 0.028 Microstrip
0.222 x 0.028 Microstrip
Isola FR408, 0.014, r = 3.7
Figure 14. 50 Ohm Test Circuit Schematic
Table 9. 50 Ohm Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2
15 pF Chip Capacitors
ECUV1H150JCV
Panasonic
C3, C6
0.01 F Chip Capacitors
C0603C103J5RAC
Kemet
C4, C7
0.1 F Chip Capacitors
C0603C104J5RAC
Kemet
C5
2.2 F Chip Capacitor
T491A225K016AT
Kemet
C8, C9
3.0 pF Chip Capacitors
06035J3R0BS
AVX
C10
2.0 pF Chip Capacitor
06035J2R0BS
AVX
C11
2.7 pF Chip Capacitor
06035J2R7BS
AVX
L1
15 nH Chip Inductor
1008CS--150XJB
Coilcraft
R1
100 , 1/4 W Chip Resistor
ERJ8GEYJ101V
Panasonic
R2, R3
0 , 1/10 W Chip Resistors
CRCW06030000FKEA
Vishay
MMG3006NT1
8
RF Device Data
Freescale Semiconductor, Inc.
50 OHM APPLICATION CIRCUIT: 1960 MHz
VBA
VSUPPLY
C5
R2
C3
C4
C6
R1
C7
R3
L1
RFin
RFout
C2
C1
C8
C9
C10
C11
MMG3006N Rev 4
Figure 15. 50 Ohm Test Circuit Component Layout
MMG3006NT1
RF Device Data
Freescale Semiconductor, Inc.
9
18
--6
16
--7
IRL, INPUT RETURN LOSS (dB)
Gp, SMALL--SIGNAL GAIN (dB)
50 OHM TYPICAL CHARACTERISTICS: 1960 MHz
TC = --40C
14
85C
12
25C
10
TC = --40C
--8
85C
25C
--9
--10
VDC = 5 Vdc
8
1900
1930
1960
1990
VDC = 5 Vdc
--11
1900
2020
f, FREQUENCY (MHz)
1960
f, FREQUENCY (MHz)
Figure 16. Small--Signal Gain (S21) versus
Frequency
Figure 17. Input Return Loss (S11) versus
Frequency
P1dB, 1 dB COMPRESSION POINT (dBm)
--10
TC = --40C
--15
85C
25C
--20
VDC = 5 Vdc
--25
1900
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
1990
2020
40
1930
1960
1990
35
30
85C
25C
TC = --40C
25
VDC = 5 Vdc
20
1900
2020
1930
1960
1990
2020
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 18. Output Return Loss (S22) versus
Frequency
Figure 19. P1dB versus Frequency
52
10
TC = --40C
50
8
25C
NF, NOISE FIGURE (dB)
ORL, OUTPUT RETURN LOSS (dB)
--5
1930
48
85C
46
TC = 85C
6
4
--40C
25C
2
44
VDC = 5 Vdc
1 MHz Tone Spacing
42
1900
1930
1960
1990
VDC = 5 Vdc
2020
0
1900
1930
1960
1990
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 20. Third Order Output Intercept
Point versus Frequency
Figure 21. Noise Figure versus Frequency
2020
MMG3006NT1
10
RF Device Data
Freescale Semiconductor, Inc.
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
50 OHM TYPICAL CHARACTERISTICS: 1960 MHz
--30
VDC = 5 Vdc, f = 1960 MHz
Single--Carrier IS--95, 9 Channel Forward
750 kHz Measurement Offset
30 kHz Measurement Bandwidth
--35
--40
--45
25C
TC = --40C
--50
85C
--55
22
24
26
30
28
--30
VDC = 5 Vdc, f = 1960 MHz
Single--Carrier IS--95, 9 Channel Forward
885 kHz Measurement Offset
30 kHz Measurement Bandwidth
--35
--40
--45
--50
--55
TC = --40C
25C
--65
--70
20
32
85C
--60
22
24
26
28
30
32
Pout, OUTPUT POWER (dBm)
Figure 22. IS--95 Adjacent Channel Power Ratio
versus Output Power
Figure 23. IS--95 Adjacent Channel Power Ratio
versus Output Power
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
Pout, OUTPUT POWER (dBm)
--30
--35
VDC = 5 Vdc, f = 1960 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF)
--40
--45
--50
TC = --40C
25C
--55
85C
--60
--65
20
22
24
26
28
Pout, OUTPUT POWER (dBm)
Figure 24. Single--Carrier W--CDMA Adjacent
Channel Power Ratio versus Output Power
MMG3006NT1
RF Device Data
Freescale Semiconductor, Inc.
11
50 OHM APPLICATION CIRCUIT: 2140 MHz
VSUPPLY
R1
C4
C3
RF
INPUT
R3
R2
16
1
Z1
Z2
Z3
Z4
C9
Z6
11
6
7
0.096 x 0.028 Microstrip
0.044 x 0.028 Microstrip
0.352 x 0.028 Microstrip
0.038 x 0.028 Microstrip
0.026 x 0.053 Microstrip
0.026 x 0.089 Microstrip
Z7
Z8
Z9
10
DUT
4
C6
C7
L1
12
2
5
Z1
Z2
Z3
Z4
Z5
Z6
C5
14 13
Current Mirror
3
C1
C8
Z5
15
Z10
RF
OUTPUT
C2
9
C10
8
Z7
Z8
Z9
Z10
PCB
0.074 x 0.028 Microstrip
0.093 x 0.028 Microstrip
0.222 x 0.028 Microstrip
0.140 x 0.028 Microstrip
Isola FR408, 0.014, r = 3.7
Figure 25. 50 Ohm Test Circuit Schematic
Table 10. 50 Ohm Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2
15 pF Chip Capacitors
ECUV1H150JCV
Panasonic
C3, C6
0.01 F Chip Capacitors
C0603C103J5RAC
Kemet
C4, C7
0.1 F Chip Capacitors
C0603C104J5RAC
Kemet
C5
2.2 F Chip Capacitor
T491A225K016AT
Kemet
C8
0.5 pF Chip Capacitor
06035J0R5BS
AVX
C9
3.6 pF Chip Capacitor
06035J3R6BS
AVX
C10
3.9 pF Chip Capacitor
06035J3R9BS
AVX
L1
15 nH Chip Inductor
1008CS--150XJB
Coilcraft
R1
100 , 1/4 W Chip Resistor
ERJ8GEYJ101V
Panasonic
R2, R3
0 , 1/10 W Chip Resistors
CRCW06030000FKEA
Vishay
MMG3006NT1
12
RF Device Data
Freescale Semiconductor, Inc.
50 OHM APPLICATION CIRCUIT: 2140 MHz
VBA
VSUPPLY
C5
R2
C3
C4
C6
R1
C7
R3
L1
RFin
RFout
C2
C1
C8
C9
C10
MMG3006N Rev 4
Figure 26. 50 Ohm Test Circuit Component Layout
MMG3006NT1
RF Device Data
Freescale Semiconductor, Inc.
13
50 OHM TYPICAL CHARACTERISTICS: 2140 MHz
--15
16
IRL, INPUT RETURN LOSS (dB)
Gp, SMALL--SIGNAL GAIN (dB)
18
TC = --40C
14
85C
25C
12
10
TC = --40C
--20
25C
--25
85C
--30
VDC = 5 Vdc
8
2080
2110
2140
2170
VDC = 5 Vdc
--35
2080
2200
f, FREQUENCY (MHz)
2140
f, FREQUENCY (MHz)
Figure 27. Small--Signal Gain (S21) versus
Frequency
Figure 28. Input Return Loss (S11) versus
Frequency
TC = --40C
--15
85C
25C
--20
VDC = 5 Vdc
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
--25
2080
2110
2140
2170
P1dB, 1 dB COMPRESSION POINT (dBm)
--10
2200
TC = --40C
35
30
25C
85C
25
VDC = 5 Vdc
20
2080
2200
2110
2140
2170
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 29. Output Return Loss (S22) versus
Frequency
Figure 30. P1dB versus Frequency
52
50
2170
40
2200
10
TC = --40C
8
25C
NF, NOISE FIGURE (dB)
ORL, OUTPUT RETURN LOSS (dB)
--5
2110
48
85C
46
6
TC = 85C
25C
4
--40C
2
44
VDC = 5 Vdc
1 MHz Tone Spacing
42
2080
2110
2140
2170
VDC = 5 Vdc
2200
0
2080
2110
2140
2170
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 31. Third Order Output Intercept
Point versus Frequency
Figure 32. Noise Figure versus Frequency
2200
MMG3006NT1
14
RF Device Data
Freescale Semiconductor, Inc.
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
50 OHM TYPICAL CHARACTERISTICS: 2140 MHz
--30
VDC = 5 Vdc, f = 2140 MHz
Single--Carrier IS--95, 9 Channel Forward
750 kHz Measurement Offset
30 kHz Measurement Bandwidth
--35
--40
25C
--45
85C
--50
TC = --40C
--55
22
24
26
28
VDC = 5 Vdc, f = 2140 MHz
Single--Carrier IS--95, 9 Channel Forward
885 kHz Measurement Offset
30 kHz Measurement Bandwidth
--35
--40
--45
--50
--55
TC = --40C
--60
85C
25C
--65
--70
20
32
30
--30
22
24
26
28
30
32
Pout, OUTPUT POWER (dBm)
Figure 33. IS--95 Adjacent Channel Power Ratio
versus Output Power
Figure 34. IS--95 Adjacent Channel Power Ratio
versus Output Power
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
Pout, OUTPUT POWER (dBm)
--30
--35
VDC = 5 Vdc, f = 2140 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF)
--40
85C
25C
--45
TC = --40C
--50
--55
--60
--65
20
22
24
26
28
Pout, OUTPUT POWER (dBm)
Figure 35. Single--Carrier W--CDMA Adjacent
Channel Power Ratio versus Output Power
MMG3006NT1
RF Device Data
Freescale Semiconductor, Inc.
15
50 OHM TYPICAL CHARACTERISTICS
Table 11. Common Emitter S--Parameters (VDC = 5 Vdc, TA = 25C, 50 Ohm System)
S11
S21
S12
S22
f
MHz
|S11|

|S21|

|S12|

|S22|

250
0.821
--173.7
2.816
143.3
0.00597
--61.7
0.922
--179.0
300
0.841
--174.5
2.643
137.3
0.00514
--56.7
0.922
--178.9
350
0.860
--175.2
2.471
132.0
0.00455
--51.6
0.922
--179.1
400
0.872
--175.3
2.309
127.6
0.00435
--44.2
0.921
--180.0
450
0.889
--176.1
2.149
124.2
0.00371
--46.7
0.924
--179.4
500
0.900
--177.0
2.030
120.3
0.00331
--40.6
0.924
--179.6
550
0.909
--177.9
1.908
116.9
0.00306
--35.3
0.925
--179.4
600
0.917
--178.8
1.796
113.8
0.00286
--30.6
0.925
--179.4
650
0.924
--179.6
1.695
110.8
0.00269
--25.9
0.924
--179.6
700
0.930
179.6
1.605
108.2
0.00258
--20.7
0.923
--179.5
750
0.935
178.9
1.522
105.8
0.00248
--15.9
0.922
--179.6
800
0.939
178.2
1.448
103.4
0.00243
--11.1
0.921
--179.8
850
0.943
177.5
1.380
101.3
0.00240
--6.6
0.920
--179.9
900
0.946
176.9
1.320
99.2
0.00239
--2.2
0.919
180.0
950
0.949
176.3
1.266
97.2
0.00239
1.8
0.918
179.9
1000
0.951
175.7
1.216
95.2
0.00242
5.4
0.918
179.6
1050
0.953
175.2
1.172
93.4
0.00246
8.8
0.918
179.5
1100
0.954
174.6
1.133
91.5
0.00250
11.9
0.917
179.3
1150
0.956
174.1
1.098
89.7
0.00255
14.1
0.917
179.0
1200
0.957
173.6
1.067
87.8
0.00261
16.7
0.916
178.8
1250
0.958
173.1
1.039
86.0
0.00268
18.6
0.915
178.6
1300
0.958
172.6
1.015
84.3
0.00275
19.9
0.915
178.3
1350
0.958
172.2
0.994
82.4
0.00282
21.4
0.914
177.9
1400
0.959
171.7
0.978
80.5
0.00292
22.6
0.913
177.6
1450
0.958
171.3
0.964
78.5
0.00299
23.5
0.913
177.3
1500
0.957
170.9
0.952
76.5
0.00306
23.9
0.912
177.1
1550
0.957
170.5
0.945
74.3
0.00316
24.2
0.912
176.7
1600
0.955
170.0
0.941
72.0
0.00324
24.3
0.911
176.5
1650
0.954
169.7
0.941
69.6
0.00332
23.7
0.910
176.2
1700
0.951
169.2
0.944
67.0
0.00340
23.3
0.909
175.8
1750
0.949
168.8
0.951
64.1
0.00348
22.3
0.907
175.5
1800
0.945
168.4
0.969
60.9
0.00360
21.0
0.906
175.2
1850
0.942
168.1
0.975
57.4
0.00361
19.4
0.905
175.0
1900
0.937
167.7
0.985
53.5
0.00364
16.9
0.903
174.6
1950
0.932
167.3
0.999
49.0
0.00363
14.0
0.902
174.4
2000
0.925
166.9
1.016
43.7
0.00357
9.9
0.901
174.1
2050
0.918
166.4
1.034
37.5
0.00346
5.4
0.902
173.8
2100
0.910
166.0
1.048
30.2
0.00322
--0.4
0.903
173.4
2150
0.904
165.6
1.053
21.7
0.00290
--6.9
0.905
173.2
2200
0.900
165.2
1.038
11.9
0.00242
--13.5
0.910
172.9
2250
0.902
164.9
0.995
1.2
0.00178
--19.1
0.916
172.5
2300
0.910
164.4
0.922
--10.0
0.00104
--18.2
0.925
172.2
2350
0.924
164.1
0.823
--20.9
0.000474
24.3
0.933
171.9
(continued)
MMG3006NT1
16
RF Device Data
Freescale Semiconductor, Inc.
50 OHM TYPICAL CHARACTERISTICS
Table 11. Common Emitter S--Parameters (VDC = 5 Vdc, TA = 25C, 50 Ohm System) (continued)
S11
S21
S12
S22
f
MHz
|S11|

|S21|

|S12|

|S22|

2400
0.938
163.7
0.711
--30.9
0.000864
82.0
0.938
171.7
2450
0.952
163.3
0.600
--39.7
0.00152
86.3
0.943
171.4
2500
0.963
162.9
0.498
--47.0
0.00207
84.0
0.945
171.1
2550
0.970
162.5
0.408
--53.1
0.00253
80.0
0.946
170.8
2600
0.976
162.1
0.332
--58.0
0.00287
76.4
0.947
170.4
2650
0.981
161.6
0.268
--61.9
0.00316
73.4
0.945
169.0
2700
0.983
161.2
0.215
--64.8
0.00340
71.2
0.944
168.3
2750
0.986
160.8
0.170
--66.7
0.00361
69.2
0.943
167.4
2800
0.988
160.5
0.132
--67.6
0.00382
67.5
0.941
166.5
2850
0.988
160.0
0.101
--66.9
0.00402
66.1
0.940
165.9
2900
0.989
159.6
0.075
--64.1
0.00418
64.8
0.939
165.1
2950
0.990
159.2
0.053
--57.4
0.00438
63.4
0.938
164.5
3000
0.990
158.8
0.037
--43.3
0.00455
62.3
0.937
163.9
MMG3006NT1
RF Device Data
Freescale Semiconductor, Inc.
17
0.65
0.40
3.00
4.30
0.65
2.5 x 2.5 Solder
Pad with Thermal
Via Structure
All Dimensions in mm
NOTES:
1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE
USED IN PCB LAYOUT DESIGN.
2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS
POSSIBLE SHOULD BE PLACED ON THE BACKSIDE CENTER
METAL GROUND LANDING PATTERN.
3. REFER TO FREESCALE APPLICATION NOTE AN2467 FOR
ADDITIONAL PQFN PCB GUIDELINES.
Figure 36. Recommended Mounting Configuration
M06N
YWZ
Figure 37. Product Marking
MMG3006NT1
18
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
MMG3006NT1
RF Device Data
Freescale Semiconductor, Inc.
19
MMG3006NT1
20
RF Device Data
Freescale Semiconductor, Inc.
MMG3006NT1
RF Device Data
Freescale Semiconductor, Inc.
21
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
 AN3100: General Purpose Amplifier Biasing
 AN3778: PCB Layout Guidelines for PQFN/QFN Style Packages Requiring Thermal Vias for Heat Dissipation
Software
 .s2p File
Development Tools
 Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to
Software & Tools on the part’s Product Summary page to download the respective tool.
FAILURE ANALYSIS
At this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis. In
cases where Freescale is contractually obligated to perform failure analysis (FA) services, full FA may be performed by third
party vendors with moderate success. For updates contact your local Freescale Sales Office.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Jan. 2008
 Initial Release of Data Sheet
1
Mar. 2008
 Corrected Table 7, Moisture Sensitivity Level Rating from 3 to 1, p. 3
 Corrected S--Parameter table frequency column label to read “MHz” versus “GHz”, pp. 17, 18
2
Mar. 2008
 Corrected Tape and Reel information from 330 mm to 12 mm, p. 1
 Corrected Figs. 24, 35, Single--Carrier W--CDMA Adjacent Channel Power Ratio versus Output Power
y--axis (ACPR) unit of measure to dBc, pp. 12, 16
3
May 2010
 Added new Fig. 3, Third Order Output Intercept Point versus Output Power and Supply Current,
p. 4
 Added AN3778, PCB Layout Guidelines for PQFN/QFN Style Packages Requiring Thermal Vias for Heat
Dissipation, Application Notes, p. 23
 Added .s2p File availability to Product Software, p. 23
4
Jan. 2011
 Corrected temperature at which ThetaJC is measured from 25C to 89C and added “no RF applied” to
Thermal Characteristics table to indicate that thermal characterization is performed under DC test with no
RF signal applied, p. 1
 Removed IDC bias callout from Table 10, Common Source S--Parameters heading as bias is not a
controlled value, pp. 17--18
 Added Printed Circuit Boards availability to Development Tools, p. 23
5
Sept. 2014
 Table 2, Maximum Ratings: updated Junction Temperature from 150C to 175C to reflect recent test
results of the device, p. 1
 Table 6, ESD Protection Characteristics, removed the word “Minimum” after the ESD class rating. ESD
ratings are characterized during new product development but are not 100% tested during production. ESD
ratings provided in the data sheet are intended to be used as a guideline when handling ESD sensitive
devices, p. 2
 Removed Fig. 2, Collector Current versus Bias Voltage at Pin #1, p. 3
 Added Fig. 38, Product Marking, p. 18
 Added Failure Analysis information, p. 22
MMG3006NT1
22
RF Device Data
Freescale Semiconductor, Inc.
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Document
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