FREESCALE MMG3004NT1

Freescale Semiconductor
Technical Data
Document Number: MMG3004NT1
Rev. 0, 11/2005
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
MMG3004NT1
Broadband High Linearity Amplifier
The MMG3004NT1 is a General Purpose Amplifier that is internally
prematched and designed for a broad range of Class A, small- signal, high
linearity, general purpose applications. It is suitable for applications with
frequencies from 400 to 2200 MHz such as Cellular, PCS, WLL, PHS,
VHF, UHF, UMTS and general small - signal RF.
400 - 2200 MHz, 16 dB
27 dBm
InGaP HBT
Features
• Frequency: 400 - 2200 MHz
• P1dB: 27 dBm @ 2140 MHz
• Small - Signal Gain: 16 dB @ 2140 MHz
• Third Order Output Intercept Point: 44 dBm @ 2140 MHz
• Single 5 Volt Supply
• Internally Prematched to 50 Ohms
• Pb - Free Leads. RoHS Compliant.
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
CASE 1543 - 02
PQFN 5x5
PLASTIC
Table 1. Typical Performance (1)
Table 2. Maximum Ratings
Characteristic
Symbol
900
MHz
1960
MHz
2140
MHz
Unit
Small - Signal Gain
(S21)
Gp
19.5
16.5
16
dB
Input Return Loss
(S11)
IRL
- 7.5
-8
-8
dB
Output Return Loss
(S22)
ORL
- 10
- 12
- 12
dB
Power Output @1dB
Compression
P1db
27
27
27
dBm
IP3
44
44
44
dBm
Third Order Output
Intercept Point
Rating
Symbol
Value
Unit
Supply Voltage (2)
VDC
6
V
(2)
IDC
400
mA
RF Input Power
Pin
18
dBm
Storage Temperature Range
Tstg
- 65 to +150
°C
Junction Temperature (3)
TJ
150
°C
Supply Current
2. Continuous voltage and current applied to device.
3. For reliable operation, the junction temperature should not
exceed 150°C.
1. VDC = 5 Vdc, TC = 25°C, 50 ohm system
Table 3. Thermal Characteristics (VDC = 5 Vdc, IDC = 250 mA, TC = 25°C)
Characteristic
Thermal Resistance, Junction to Case
Symbol
Value (4)
Unit
RθJC
33
°C/W
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
 Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
MMG3004NT1
1
Table 4. Electrical Characteristics (VDC = 5 Vdc, 2140 MHz, TC = 25°C, 50 ohm system, in Freescale Application Circuit)
Symbol
Min
Typ
Max
Unit
Small - Signal Gain (S21)
Characteristic
Gp
15
16
—
dB
Input Return Loss (S11)
IRL
—
-8
—
dB
Output Return Loss (S22)
ORL
—
- 12
—
dB
Power Output @ 1dB Compression
P1dB
—
27
—
dBm
Third Order Output Intercept Point
IP3
—
44
—
dBm
Noise Figure
NF
—
3.4
—
dB
Supply Current (1)
IDC
225
250
275
mA
Supply Voltage (1)
VDC
—
5
—
V
1. For reliable operation, the junction temperature should not exceed 150°C.
MMG3004NT1
2
RF Device Data
Freescale Semiconductor
Table 5. Functional Pin Description
Name
Pin
Number
Description
RFin
2, 3, 4
RFOUT/
VCC
10, 11, 12
VCC
14
Collector voltage supply.
VBA
16
Bias voltage supply.
GND
Backside
Center
Metal
VCC
VBA
RF input for the power amplifier. This pin is DC - coupled and
requires a DC - blocking series capacitor.
RF output for the power amplifier. This pin is DC - coupled
and requires a DC - blocking series capacitor.
The center metal base of the PQFN package provides both
DC and RF ground as well as heat sink contact for the
power amplifier.
1
16
15
14
13
RFin
2
12
RFout
RFin
3
11
RFout
RFin
4
10
RFout
5
6
7
8
9
(Top View)
Figure 1. Pin Connections
Table 6. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD 22 - A114)
1B (Minimum)
Machine Model (per EIA/JESD 22 - A115)
A (Minimum)
Charge Device Model (per JESD 22 - C101)
III (Minimum)
Table 7. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
3
260
°C
MMG3004NT1
RF Device Data
Freescale Semiconductor
3
50 OHM TYPICAL CHARACTERISTICS
106
250
MTTF (YEARS)
ICC, COLLECTOR CURRENT (mA)
300
200
150
105
104
100
50
VCC = 5 Vdc
103
0
0
1
2
3
4
5
VBA, BIAS VOLTAGE (V)
Figure 2. Collector Current versus Bias Voltage
120
125
130
135
140
145
150
TJ, JUNCTION TEMPERATURE (°C)
NOTE: The MTTF is calculated with VDC = 5 Vdc, IDC = 250 mA
Figure 3. MTTF versus Junction Temperature
MMG3004NT1
4
RF Device Data
Freescale Semiconductor
50 OHM APPLICATION CIRCUIT: 900 MHz
VSUPPLY
R2
R1
C3
C4
C5
16
1
RF
INPUT
Z2
Z3
C8
DUT
5
Z1, Z11
Z2, Z10
Z3
Z4
Z5
12
0.140″
0.060″
0.192″
0.055″
0.084″
Z7
11
4
6
7
x 0.028″ Microstrip
x 0.028″ Microstrip
x 0.028″ Microstrip
x 0.028″ Microstrip
x 0.028″ Microstrip
C6
L1
Z6
3
L2
C7
13
Z5
Z4
C1
14
Current Mirror
2
Z1
15
Z8
Z6
Z7
Z8
Z9
PCB
Z10
Z11
L3
10
8
Z9
RF
OUTPUT
C2
C9
C10
9
0.089″ x 0.028″ Microstrip
0.051″ x 0.028″ Microstrip
0.055″ x 0.028″ Microstrip
0.112″ x 0.028″ Microstrip
Isola FR408, 0.014″, εr = 3.7
Figure 4. 50 Ohm Test Circuit Schematic
Table 8. 50 Ohm Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2
15 pF Chip Capacitors
ECUV1H150JCV
Panasonic
C3, C5
0.01 µF Chip Capacitors
0603A103JAT2A
AVX
C4, C6
0.1 µF Chip Capacitors
0603A102JAT2A
AVX
C7, C8
2.2 pF Chip Capacitors
06035J2R2BBT
AVX
C9, C10
1.8 pF Chip Capacitors
06035J1R8BBT
AVX
L1
33 nH Chip Inductor
LL1608- FH33NJ
Toko
L2, L3
3.9 nH Chip Inductors
LL1608- FH3N9S
Toko
R1
22 Ω Chip Resistor
R2
0 Ω Chip Resistor
MMG3004NT1
RF Device Data
Freescale Semiconductor
5
50 OHM APPLICATION CIRCUIT: 900 MHz
Vp
VCC
R2
R1
C5
C6
C3
C4
RFin
RFout
L1
L2
C1
C7
C8
L3
C9
C10
C2
MMG3004/5/6 Rev. 3
Figure 5. 50 Ohm Test Circuit Component Layout
MMG3004NT1
6
RF Device Data
Freescale Semiconductor
50 OHM TYPICAL CHARACTERISTICS: 900 MHz
0
IRL, INPUT RETURN LOSS (dB)
Gp, SMALL−SIGNAL GAIN (dB)
21
20
TC = 25°C
−40°C
19
85°C
18
−2
−4
−6
TC = 85°C
−8
VDC = 5 Vdc
17
840
870
900
930
−10
840
960
930
Figure 6. Small - Signal Gain (S21) versus
Frequency
Figure 7. Input Return Loss (S11) versus
Frequency
960
29
P1dB, 1 dB COMPRESSION POINT (dBm)
ORL, OUTPUT RETURN LOSS (dB)
900
f, FREQUENCY (MHz)
−7
TC = −40°C
−9
25°C
−11
85°C
−13
VDC = 5 Vdc
−15
840
870
900
930
28
TC = 25°C
85°C
−40°C
27
26
VDC = 5 Vdc
25
840
960
870
900
930
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 8. Output Return Loss (S22) versus
Frequency
Figure 9. P1dB versus Frequency
47
960
10
45
8
TC = 25°C
43
−40°C
41
85°C
NF, NOISE FIGURE (dB)
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
870
25°C
f, FREQUENCY (MHz)
−5
6
TC = 85°C
4
−40°C
25°C
2
39
VDC = 5 Vdc
1 MHz Tone Spacing
37
840
−40°C
VDC = 5 Vdc
870
VDC = 5 Vdc
900
930
960
0
840
870
900
930
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 10. Third Order Output Intercept
Point versus Frequency
Figure 11. Noise Figure versus Frequency
960
MMG3004NT1
RF Device Data
Freescale Semiconductor
7
−30
VDC = 5 Vdc, IDC = 250 mA, f = 900 MHz
Single−Carrier IS−95, 9 Channel Forward
750 kHz Measurement Offset
30 kHz Measurement Bandwidth
−35
−40
−45
−50
TC = 85°C
−55
19
25°C
−40°C
21
23
25
27
29
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
50 OHM TYPICAL CHARACTERISTICS: 900 MHz
VDC = 5 Vdc, IDC = 250 mA, f = 900 MHz
Single−Carrier IS−95, 9 Channel Forward
885 kHz Measurement Offset
30 kHz Measurement Bandwidth
−40
−50
−60
TC = 85°C
−70
25°C
−80
17
−40°C
19
21
23
25
27
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
Figure 12. IS - 95 Adjacent Channel Power Ratio
versus Output Power
Figure 13. IS - 95 Adjacent Channel Power Ratio
versus Output Power
MMG3004NT1
8
RF Device Data
Freescale Semiconductor
50 OHM APPLICATION CIRCUIT: 1900 - 2200 MHz
VSUPPLY
R2
R1
C4
C3
C5
16
1
RF
INPUT
Z2
Z3
14
Current Mirror
2
Z1
15
Z5
0.140″
0.060″
0.259″
0.080″
Z6
Z7
Z8
Z9
RF
OUTPUT
C2
DUT
4
5
Z1, Z9
Z2, Z8
Z3
Z4
12
11
C1
C8
C6
L1
Z4
3
C7
13
6
7
x 0.028″ Microstrip
x 0.028″ Microstrip
x 0.028″ Microstrip
x 0.028″ Microstrip
10
8
Z5
Z6
Z7
PCB
C9
C10
9
0.049″ x 0.028″ Microstrip
0.036″ x 0.028″ Microstrip
0.254″ x 0.028″ Microstrip
Isola FR408, 0.014″, εr = 3.7
Figure 14. 50 Ohm Test Circuit Schematic
Table 9. 50 Ohm Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2
15 pF Chip Capacitors
ECUV1H150JCV
Panasonic
C3, C5
0.01 µF Chip Capacitors
0603A103JAT2A
AVX
C4, C6
0.1 µF Chip Capacitors
0603A102JAT2A
AVX
C7, C10
0.5 pF Chip Capacitors
06035J0R5BBT
AVX
C8
2.7 pF Chip Capacitor
06035J2R7BBT
AVX
C9
0.8 pF Chip Capacitor
06035J0R8BBT
AVX
L1
33 nH Chip Inductor
LL1608- FH33NJ
Toko
R1
22 Ω Chip Resistor
R2
0 Ω Chip Resistor
MMG3004NT1
RF Device Data
Freescale Semiconductor
9
50 OHM APPLICATION CIRCUIT: 1900 - 2200 MHz
Vp
VCC
R2
R1
C5
C6
C3
C4
RFin
C1
RFout
L1
C7
C8
C9
C10
C2
MMG3004/5/6 Rev. 3
Figure 15. 50 Ohm Test Circuit Component Layout
MMG3004NT1
10
RF Device Data
Freescale Semiconductor
50 OHM TYPICAL CHARACTERISTICS: 1900 - 2200 MHz
−5
17
IRL, INPUT RETURN LOSS (dB)
Gp, SMALL−SIGNAL GAIN (dB)
18
TC = 25°C
16
85°C
−40°C
15
14
13
−6
−7
−8
1960
2020
2080
2140
−10
1900
2200
f, FREQUENCY (MHz)
2020
2080
f, FREQUENCY (MHz)
Figure 16. Small - Signal Gain (S21) versus
Frequency
Figure 17. Input Return Loss (S11) versus
Frequency
P1dB, 1 dB COMPRESSION POINT (dBm)
−7
−9
−11
TC = −40°C
−13
85°C
25°C
−15
1900
1960
2020
2080
2140
2140
2200
28
TC = −40°C
27
25°C
85°C
26
VDC = 5 Vdc
25
1900
2200
1960
2020
2080
2140
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 18. Output Return Loss (S22) versus
Frequency
Figure 19. P1dB versus Frequency
47
10
45
8
NF, NOISE FIGURE (dB)
ORL, OUTPUT RETURN LOSS (dB)
1960
29
VDC = 5 Vdc
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
25°C
VDC = 5 Vdc
−5
TC = 25°C
43
−40°C
41
85°C
39
1960
4
TC = 85°C
2
−40°C
25°C
VDC = 5 Vdc
2020
2080
2140
2200
2200
6
VDC = 5 Vdc
1 MHz Tone Spacing
37
1900
−40°C
−9
VDC = 5 Vdc
12
1900
TC = 85°C
0
1900
1960
2020
2080
2140
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 20. Third Order Output Intercept
Point versus Frequency
Figure 21. Noise Figure versus Frequency
2200
MMG3004NT1
RF Device Data
Freescale Semiconductor
11
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
−30
VDC = 5 Vdc, IDC = 250 mA, f = 1960 MHz
Single−Carrier IS−95, 9 Channel Forward
750 kHz Measurement Offset
30 kHz Measurement Bandwidth
−35
−40
−45
TC = 85°C
−50
−40°C
−55
19
25°C
21
23
25
27
29
VDC = 5 Vdc, IDC = 250 mA, f = 1960 MHz
Single−Carrier IS−95, 9 Channel Forward
885 kHz Measurement Offset
30 kHz Measurement Bandwidth
−40
−50
−60
TC = 85°C
−70
25°C
−40°C
−80
17
19
21
23
25
27
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
Figure 22. IS - 95 Adjacent Channel Power Ratio
versus Output Power
Figure 23. IS - 95 Adjacent Channel Power Ratio
versus Output Power
ACPR, ADJACENT CHANNEL POWER RATIO (dB)
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
50 OHM TYPICAL CHARACTERISTICS: 1900 - 2200 MHz
−20
−30
−40
TC = −40°C
85°C
−50
25°C
−60
VDC = 5 Vdc, IDC = 250 mA, f = 2140 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
−70
16
18
20
22
24
26
Pout, OUTPUT POWER (dBm)
Figure 24. Single - Carrier W - CDMA Adjacent
Channel Power Ratio versus Output Power
MMG3004NT1
12
RF Device Data
Freescale Semiconductor
50 OHM TYPICAL CHARACTERISTICS
Table 10. Class A Common Emitter S - Parameters at VDC = 5 Vdc, IDC = 250 mA, TC = 255C
S11
S21
S12
S22
f
GHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
0.25
0.47850
- 144.63
9.45303
155.76
0.01650
- 37.55
0.72316
- 177.17
0.30
0.52079
- 147.32
9.03153
149.91
0.01507
- 32.08
0.72165
- 179.65
0.35
0.56232
- 150.13
8.58464
144.58
0.01400
- 27.65
0.72111
178.58
0.40
0.60124
- 152.97
8.14110
139.74
0.01312
- 23.56
0.72123
177.23
0.45
0.63724
- 155.74
7.71607
135.24
0.01238
- 19.64
0.72227
176.23
0.50
0.67062
- 158.39
7.30892
131.03
0.01178
- 15.72
0.72607
175.49
0.55
0.69942
- 160.88
6.89268
127.12
0.01127
- 11.78
0.72827
174.79
0.60
0.72531
- 163.15
6.49002
123.55
0.01089
- 7.87
0.73132
174.32
0.65
0.74778
- 165.23
6.11441
120.27
0.01059
- 3.96
0.73450
173.93
0.70
0.76805
- 167.12
5.76070
117.18
0.01038
- 0.12
0.73738
173.62
0.75
0.78656
- 168.87
5.45265
114.30
0.01026
3.42
0.74039
173.40
0.80
0.80272
- 170.48
5.15936
111.47
0.01020
6.89
0.74323
173.19
0.85
0.81645
- 171.90
4.88436
108.89
0.01021
10.11
0.74517
173.02
0.90
0.82822
- 173.17
4.62846
106.51
0.01027
13.05
0.74685
172.87
0.95
0.83744
- 174.28
4.39398
104.33
0.01040
15.81
0.74824
172.75
1.00
0.84657
- 175.33
4.19167
102.27
0.01057
18.21
0.74859
172.62
1.05
0.85407
- 176.30
4.02364
100.34
0.01077
20.46
0.74854
172.44
1.10
0.86090
- 177.20
3.94135
98.55
0.01104
22.47
0.74717
172.28
1.15
0.86535
- 178.01
3.91900
96.85
0.01133
24.29
0.74526
172.02
1.20
0.86886
- 178.83
3.85851
95.17
0.01170
25.89
0.74174
171.79
1.25
0.87175
- 179.63
3.79219
93.55
0.01213
27.37
0.73677
171.52
1.30
0.87371
179.54
3.72665
91.87
0.01260
28.59
0.72983
171.23
1.35
0.87541
178.70
3.67139
90.24
0.01314
29.59
0.72142
171.00
1.40
0.87551
177.79
3.61378
88.58
0.01374
30.35
0.71266
170.74
1.45
0.87377
176.80
3.54706
86.86
0.01441
31.03
0.70274
170.34
1.50
0.87157
175.77
3.49666
85.07
0.01515
31.39
0.68899
169.84
1.55
0.86970
174.61
3.43623
83.27
0.01593
31.55
0.67338
169.39
1.60
0.87145
173.30
3.37777
81.56
0.01667
31.82
0.65921
168.89
1.65
0.87360
172.88
3.29315
79.82
0.01704
32.13
0.64230
168.30
1.70
0.87554
171.27
3.23698
78.19
0.01742
32.44
0.63500
167.61
1.75
0.87801
170.47
3.18392
76.44
0.01787
32.72
0.62803
166.69
1.80
0.87960
169.84
3.12886
74.79
0.01827
33.03
0.62082
165.48
1.85
0.88138
168.45
3.07394
73.09
0.01868
33.51
0.61361
164.62
1.90
0.88346
167.07
3.02285
70.94
0.01909
33.93
0.60658
163.92
1.95
0.88598
166.55
2.96910
69.97
0.01943
34.35
0.59945
162.22
2.00
0.88778
165.97
2.91830
68.84
0.01979
34.80
0.59252
160.49
2.05
0.88960
164.20
2.86794
67.75
0.02016
35.21
0.58583
158.82
2.10
0.89142
163.32
2.82292
66.45
0.02056
35.61
0.57935
155.15
2.15
0.89304
162.24
2.77684
64.77
0.02099
35.94
0.57343
153.51
2.20
0.89418
161.03
2.72905
63.07
0.02145
36.24
0.56807
150.95
2.25
0.89508
160.65
2.68145
61.37
0.02191
36.53
0.56323
147.48
2.30
0.89600
159.14
2.63323
59.64
0.02243
36.76
0.55888
144.06
2.35
0.89634
158.47
2.58664
57.91
0.02297
36.91
0.55599
141.76
2.40
0.89699
157.61
2.54289
56.14
0.02356
37.09
0.55378
138.51
2.45
0.89702
155.66
2.50232
54.31
0.02424
37.17
0.55279
137.25
MMG3004NT1
RF Device Data
Freescale Semiconductor
13
Table 10. Class A Common Emitter S - Parameters at VDC = 5 Vdc, IDC = 250 mA, TC = 255C (continued)
S11
S21
S12
S22
f
GHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
2.50
0.89704
153.55
2.46083
52.48
0.02497
37.10
0.55229
136.08
2.55
0.89673
151.36
2.41952
50.63
0.02577
36.86
0.55220
134.93
2.60
0.89666
149.04
2.37843
48.76
0.02662
36.46
0.55253
133.86
2.65
0.89604
147.95
2.33835
46.85
0.02748
35.86
0.55292
132.84
2.70
0.89565
146.13
2.29930
44.91
0.02839
35.08
0.55313
131.90
2.75
0.89574
144.58
2.26245
42.98
0.02929
34.17
0.55301
131.05
2.80
0.89516
142.97
2.22577
41.05
0.03020
33.15
0.55285
130.28
2.85
0.89417
141.35
2.18910
39.16
0.03111
32.05
0.55271
129.61
2.90
0.89358
139.74
2.15463
37.28
0.03203
30.83
0.55189
128.97
2.95
0.89313
137.08
2.12107
35.40
0.03295
29.56
0.55130
128.44
3.00
0.89241
135.52
2.09065
33.50
0.03387
28.22
0.55001
127.89
MMG3004NT1
14
RF Device Data
Freescale Semiconductor
2.2 x 2.2
1.35
0.6
2.6
5.3
0.8
NOTES:
1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE
USED IN PCB LAYOUT DESIGN.
2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS
POSSIBLE SHOULD BE PLACED ON THE BACKSIDE CENTER
METAL GROUND LANDING PATTERN.
3. REFER TO FREESCALE APPLICATION NOTE AN2467 FOR
ADDITIONAL PQFN PCB GUIDELINES.
Figure 25. Recommended Mounting Configuration
MMG3004NT1
RF Device Data
Freescale Semiconductor
15
NOTES
MMG3004NT1
16
RF Device Data
Freescale Semiconductor
NOTES
MMG3004NT1
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17
NOTES
MMG3004NT1
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RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
5
DETAIL G
PIN 1 INDEX
M
0.15 C
2X
5
2.5
M
0.15 C
B
0.1 C
2X
NOTES:
1. ALL DIMENSIONS ARE IN MILLIMETERS.
2. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
3. THE COMPLETE JEDEC DESIGNATOR FOR THIS
PACKAGE IS: HF−PQFP−N.
4. COPLANARITY APPLIES TO LEADS AND DIE
ATTACH PAD.
5. MINIMUM METAL GAP SHOULD BE 0.25MM
2.20
1.95
2.2
2.0
16X
0.05 C
4
(0.55)
2.20
1.95
C
(0.8)
SEATING PLANE
DETAIL G
EXPOSED DIE
ATTACH PAD
2.2
1.8
0.1
1
14
VIEW ROTATED 90_ CLOCKWISE
M
0.1 M C A B
0.05 M C
DETAIL M
16
13
0.92
0.78
C A B
12X (0.05)
1
0.7 (0.2)
0.3
1
0.1
M
0.1 M C A B
0.05 M C
8X 0.8
2.2
1.8
5
9
C A B
12X 0.62
8
6
0.48
(0.2)
0.92
0.78
20X 1.20
0.95
12X 0.37
0.1 M C A B
0.05 M C
VIEW M - M
0.23
0.7
0.3
DETAIL M
CORNER CONFIGURATION
CASE 1543 - 02
ISSUE B
PQFN 5x5
PLASTIC
MMG3004NT1
RF Device Data
Freescale Semiconductor
19
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MMG3004NT1
Document Number: MMG3004NT1
Rev. 0, 11/2005
20
RF Device Data
Freescale Semiconductor