Freescale Semiconductor Technical Data Document Number: MMG3004NT1 Rev. 3, 3/2008 Heterojunction Bipolar Transistor Technology (InGaP HBT) MMG3004NT1 Broadband High Linearity Amplifier The MMG3004NT1 is a General Purpose Amplifier that is internally prematched and designed for a broad range of Class A, small- signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 400 to 2200 MHz such as Cellular, PCS, WLL, PHS, VHF, UHF, UMTS and general small - signal RF. 400 - 2200 MHz, 16 dB 27 dBm InGaP HBT Features • Frequency: 400 - 2200 MHz • P1dB: 27 dBm @ 2140 MHz • Small - Signal Gain: 16 dB @ 2140 MHz • Third Order Output Intercept Point: 44 dBm @ 2140 MHz • Single 5 Volt Supply • Internally Prematched to 50 Ohms • RoHS Compliant • In Tape and Reel. T1 Suffix = 1000 Units per 16 mm, 13 inch Reel. CASE 1543 - 03 PQFN 5x5 PLASTIC Table 1. Typical Performance (1) Table 2. Maximum Ratings Characteristic Symbol 900 MHz 1960 MHz 2140 MHz Unit Small - Signal Gain (S21) Gp 19.5 16.5 16 dB Input Return Loss (S11) IRL - 7.5 -8 -8 dB Output Return Loss (S22) ORL - 10 - 12 - 12 dB Power Output @1dB Compression P1db 27 27 27 dBm IP3 44 44 44 dBm Third Order Output Intercept Point Rating Symbol Value Unit Supply Voltage VDC 6 V Supply Current IDC 400 mA RF Input Power Pin 18 dBm Storage Temperature Range Tstg - 65 to +150 °C Junction Temperature (2) TJ 150 °C 2. For reliable operation, the junction temperature should not exceed 150°C. 1. VDC = 5 Vdc, TC = 25°C, 50 ohm system Table 3. Thermal Characteristics (VDC = 5 Vdc, IDC = 250 mA, TC = 25°C) Characteristic Thermal Resistance, Junction to Case Symbol Value (3) Unit RθJC 33 °C/W 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2005-2008. All rights reserved. RF Device Data Freescale Semiconductor MMG3004NT1 1 Table 4. Electrical Characteristics (VDC = 5 Vdc, 2140 MHz, TC = 25°C, 50 ohm system, in Freescale Application Circuit) Symbol Min Typ Max Unit Small - Signal Gain (S21) Characteristic Gp 15 16 — dB Input Return Loss (S11) IRL — -8 — dB Output Return Loss (S22) ORL — - 12 — dB Power Output @ 1dB Compression P1dB — 27 — dBm Third Order Output Intercept Point IP3 — 44 — dBm Noise Figure NF — 3.4 — dB Supply Current (1) IDC 225 250 275 mA Supply Voltage (1) VDC — 5 — V 1. For reliable operation, the junction temperature should not exceed 150°C. MMG3004NT1 2 RF Device Data Freescale Semiconductor Table 5. Functional Pin Description Name Pin Number Description RFin 2, 3, 4 RFout/ VCC 10, 11, 12 VCC 14 Collector voltage supply. VBA 16 Bias voltage supply. GND Backside Center Metal VCC VBA RF input for the power amplifier. This pin is DC - coupled and requires a DC - blocking series capacitor. RF output for the power amplifier. This pin is DC - coupled and requires a DC - blocking series capacitor. The center metal base of the PQFN package provides both DC and RF ground as well as heat sink contact for the power amplifier. 16 1 15 14 13 RFin 2 12 RFout/VCC RFin 3 11 RFout/VCC RFin 4 10 RFout/VCC 5 6 7 8 9 (Top View) Figure 1. Pin Connections Table 6. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD 22 - A114) 1B (Minimum) Machine Model (per EIA/JESD 22 - A115) A (Minimum) Charge Device Model (per JESD 22 - C101) III (Minimum) Table 7. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 3 260 °C MMG3004NT1 RF Device Data Freescale Semiconductor 3 50 OHM TYPICAL CHARACTERISTICS 106 250 MTTF (YEARS) ICC, COLLECTOR CURRENT (mA) 300 200 150 105 104 100 50 VCC = 5 Vdc 103 0 0 1 2 3 4 5 VBA, BIAS VOLTAGE (V) Figure 2. Collector Current versus Bias Voltage 120 125 130 135 140 145 150 TJ, JUNCTION TEMPERATURE (°C) NOTE: The MTTF is calculated with VDC = 5 Vdc, IDC = 250 mA Figure 3. MTTF versus Junction Temperature MMG3004NT1 4 RF Device Data Freescale Semiconductor 50 OHM APPLICATION CIRCUIT: 900 MHz VSUPPLY R2 R1 C3 C4 C5 1 RF INPUT 16 Z2 Z3 C8 5 Z1, Z11 Z2, Z10 Z3 Z4 Z5 12 0.140″ 0.060″ 0.192″ 0.055″ 0.084″ Z7 11 DUT 4 6 7 x 0.028″ Microstrip x 0.028″ Microstrip x 0.028″ Microstrip x 0.028″ Microstrip x 0.028″ Microstrip C6 L1 Z6 3 L2 C7 13 Z5 Z4 C1 14 Current Mirror 2 Z1 15 Z8 Z6 Z7 Z8 Z9 PCB Z10 Z11 L3 10 8 Z9 RF OUTPUT C2 C9 C10 9 0.089″ x 0.028″ Microstrip 0.051″ x 0.028″ Microstrip 0.055″ x 0.028″ Microstrip 0.112″ x 0.028″ Microstrip Isola FR408, 0.014″, εr = 3.7 Figure 4. 50 Ohm Test Circuit Schematic Table 8. 50 Ohm Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 15 pF Chip Capacitors ECUV1H150JCV Panasonic C3, C5 0.01 μF Chip Capacitors C0603C103J5RAC Kemet C4, C6 0.1 μF Chip Capacitors C0603C104J5RAC Kemet C7, C8 2.2 pF Chip Capacitors 06035J2R2BS AVX C9, C10 1.8 pF Chip Capacitors 06035J1R8BS AVX L1 33 nH Chip Inductor LL1608- FSL33NJ Toko L2, L3 3.9 nH Chip Inductors LL1608- FSL3N9S Toko R1 22 Ω, 1/10 W Chip Resistor CRCW060322R0FKEA Vishay R2 0 Ω, 1/10 W Chip Resistor CRCW06030000FKEA Vishay MMG3004NT1 RF Device Data Freescale Semiconductor 5 50 OHM APPLICATION CIRCUIT: 900 MHz VBA VSUPPLY R2 R1 C5 C6 C3 C4 RFin RFout L1 L2 C1 C7 C8 L3 C9 C10 C2 MMG3004/5 Rev. 3 Figure 5. 50 Ohm Test Circuit Component Layout MMG3004NT1 6 RF Device Data Freescale Semiconductor 50 OHM TYPICAL CHARACTERISTICS: 900 MHz 0 IRL, INPUT RETURN LOSS (dB) Gp, SMALL−SIGNAL GAIN (dB) 21 20 TC = 25°C −40°C 19 85°C 18 −2 −4 −6 TC = 85°C −8 VDC = 5 Vdc 17 840 870 900 930 −10 840 960 930 Figure 6. Small - Signal Gain (S21) versus Frequency Figure 7. Input Return Loss (S11) versus Frequency 960 29 P1dB, 1 dB COMPRESSION POINT (dBm) ORL, OUTPUT RETURN LOSS (dB) 900 f, FREQUENCY (MHz) −7 TC = −40°C −9 25°C −11 85°C −13 VDC = 5 Vdc −15 840 870 900 930 28 TC = 25°C 85°C −40°C 27 26 VDC = 5 Vdc 25 840 960 870 900 930 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 8. Output Return Loss (S22) versus Frequency Figure 9. P1dB versus Frequency 47 960 10 45 8 TC = 25°C 43 −40°C 41 85°C NF, NOISE FIGURE (dB) IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 870 25°C f, FREQUENCY (MHz) −5 6 TC = 85°C 4 −40°C 25°C 2 39 VDC = 5 Vdc 1 MHz Tone Spacing 37 840 −40°C VDC = 5 Vdc 870 VDC = 5 Vdc 900 930 960 0 840 870 900 930 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 10. Third Order Output Intercept Point versus Frequency Figure 11. Noise Figure versus Frequency 960 MMG3004NT1 RF Device Data Freescale Semiconductor 7 −30 VDC = 5 Vdc, f = 900 MHz Single−Carrier IS−95, 9 Channel Forward 750 kHz Measurement Offset 30 kHz Measurement Bandwidth −35 −40 −45 −50 TC = 85°C −55 19 25°C −40°C 21 23 25 27 29 ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) 50 OHM TYPICAL CHARACTERISTICS: 900 MHz VDC = 5 Vdc, f = 900 MHz Single−Carrier IS−95, 9 Channel Forward 885 kHz Measurement Offset 30 kHz Measurement Bandwidth −40 −50 −60 TC = 85°C −70 25°C −80 17 −40°C 19 21 23 25 27 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) Figure 12. IS - 95 Adjacent Channel Power Ratio versus Output Power Figure 13. IS - 95 Adjacent Channel Power Ratio versus Output Power MMG3004NT1 8 RF Device Data Freescale Semiconductor 50 OHM APPLICATION CIRCUIT: 1900 - 2200 MHz VSUPPLY R2 R1 C4 C3 C5 1 RF INPUT 16 Z2 Z3 14 Current Mirror 2 Z1 15 Z5 0.140″ 0.060″ 0.259″ 0.080″ Z6 Z7 Z8 Z9 RF OUTPUT C2 DUT 4 5 Z1, Z9 Z2, Z8 Z3 Z4 12 11 C1 C8 C6 L1 Z4 3 C7 13 6 7 x 0.028″ Microstrip x 0.028″ Microstrip x 0.028″ Microstrip x 0.028″ Microstrip 10 8 Z5 Z6 Z7 PCB C9 C10 9 0.049″ x 0.028″ Microstrip 0.036″ x 0.028″ Microstrip 0.254″ x 0.028″ Microstrip Isola FR408, 0.014″, εr = 3.7 Figure 14. 50 Ohm Test Circuit Schematic Table 9. 50 Ohm Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 15 pF Chip Capacitors ECUV1H150JCV Panasonic C3, C5 0.01 μF Chip Capacitors C0603C103J5RAC Kemet C4, C6 0.1 μF Chip Capacitors C0603C104J5RAC Kemet C7, C10 0.5 pF Chip Capacitors 06035J0R5BS AVX C8 2.7 pF Chip Capacitor 06035J2R7BS AVX C9 0.8 pF Chip Capacitor 06035J0R8BS AVX L1 33 nH Chip Inductor LL1608- FSL33NJ Toko R1 22 Ω, 1/10 W Chip Resistor CRCW060322R0FKEA Vishay R2 0 Ω, 1/10 W Chip Resistor CRCW06030000FKEA Vishay MMG3004NT1 RF Device Data Freescale Semiconductor 9 50 OHM APPLICATION CIRCUIT: 1900 - 2200 MHz VBA VSUPPLY R2 R1 C5 C6 C3 C4 RFin C1 RFout L1 C7 C8 C9 C10 C2 MMG3004/5 Rev. 3 Figure 15. 50 Ohm Test Circuit Component Layout MMG3004NT1 10 RF Device Data Freescale Semiconductor 50 OHM TYPICAL CHARACTERISTICS: 1900 - 2200 MHz −5 17 IRL, INPUT RETURN LOSS (dB) Gp, SMALL−SIGNAL GAIN (dB) 18 TC = 25°C 16 85°C −40°C 15 14 13 −6 −7 −8 1960 2020 2080 2140 −10 1900 2200 f, FREQUENCY (MHz) 2020 2080 f, FREQUENCY (MHz) Figure 16. Small - Signal Gain (S21) versus Frequency Figure 17. Input Return Loss (S11) versus Frequency P1dB, 1 dB COMPRESSION POINT (dBm) −7 −9 −11 TC = −40°C −13 85°C 25°C −15 1900 1960 2020 2080 2140 2140 2200 28 TC = −40°C 27 25°C 85°C 26 VDC = 5 Vdc 25 1900 2200 1960 2020 2080 2140 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 18. Output Return Loss (S22) versus Frequency Figure 19. P1dB versus Frequency 47 10 45 8 NF, NOISE FIGURE (dB) ORL, OUTPUT RETURN LOSS (dB) 1960 29 VDC = 5 Vdc IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 25°C VDC = 5 Vdc −5 TC = 25°C 43 −40°C 41 85°C 39 1960 4 TC = 85°C 2 −40°C 25°C VDC = 5 Vdc 2020 2080 2140 2200 2200 6 VDC = 5 Vdc 1 MHz Tone Spacing 37 1900 −40°C −9 VDC = 5 Vdc 12 1900 TC = 85°C 0 1900 1960 2020 2080 2140 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 20. Third Order Output Intercept Point versus Frequency Figure 21. Noise Figure versus Frequency 2200 MMG3004NT1 RF Device Data Freescale Semiconductor 11 ACPR, ADJACENT CHANNEL POWER RATIO (dBc) −30 VDC = 5 Vdc, f = 1960 MHz Single−Carrier IS−95, 9 Channel Forward 750 kHz Measurement Offset 30 kHz Measurement Bandwidth −35 −40 −45 TC = 85°C −50 −40°C −55 19 25°C 21 23 25 27 29 VDC = 5 Vdc, f = 1960 MHz Single−Carrier IS−95, 9 Channel Forward 885 kHz Measurement Offset 30 kHz Measurement Bandwidth −40 −50 −60 TC = 85°C −70 25°C −40°C −80 17 19 21 23 25 27 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) Figure 22. IS - 95 Adjacent Channel Power Ratio versus Output Power Figure 23. IS - 95 Adjacent Channel Power Ratio versus Output Power ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) 50 OHM TYPICAL CHARACTERISTICS: 1900 - 2200 MHz −20 −30 −40 TC = −40°C 85°C −50 25°C −60 VDC = 5 Vdc, f = 2140 MHz Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF) −70 16 18 20 22 24 26 Pout, OUTPUT POWER (dBm) Figure 24. Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power MMG3004NT1 12 RF Device Data Freescale Semiconductor 50 OHM TYPICAL CHARACTERISTICS Table 10. Common Emitter S - Parameters (VDC = 5 Vdc, IDC = 250 mA, TC = 25°C, 50 Ohm System) S11 S21 S12 S22 f MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 400 0.62780 - 155.59 7.75028 138.19 0.01341 - 20.61 0.73308 177.59 425 0.64110 - 156.56 7.52200 135.93 0.01318 - 18.49 0.73263 177.05 450 0.65775 - 157.61 7.40177 133.81 0.01297 - 16.33 0.73058 176.51 475 0.67009 - 158.60 7.20037 131.68 0.01282 - 14.50 0.72961 176.03 500 0.68313 - 159.63 7.05567 129.69 0.01265 - 12.50 0.72804 175.54 525 0.69585 - 160.59 6.91538 127.76 0.01255 - 10.52 0.72718 175.02 550 0.70558 - 161.46 6.69940 125.72 0.01251 - 8.66 0.72650 174.46 575 0.71811 - 162.43 6.60437 123.98 0.01243 - 6.84 0.72500 173.90 600 0.72694 - 163.35 6.42427 122.18 0.01240 - 5.19 0.72458 173.43 625 0.73704 - 164.30 6.29327 120.47 0.01238 - 3.35 0.72338 172.92 650 0.74634 - 165.20 6.17990 118.78 0.01241 - 1.68 0.72241 172.43 675 0.75277 - 166.03 5.99028 117.13 0.01246 - 0.10 0.72250 171.98 700 0.76214 - 166.98 5.91391 115.54 0.01249 1.32 0.72135 171.44 725 0.76874 - 167.82 5.76815 114.00 0.01254 2.86 0.72103 170.97 750 0.77561 - 168.72 5.64770 112.56 0.01262 4.27 0.72003 170.51 775 0.78327 - 169.54 5.56291 111.09 0.01272 5.73 0.71950 170.03 800 0.78772 - 170.26 5.40401 109.64 0.01285 7.01 0.71888 169.54 825 0.79476 - 171.12 5.33575 108.25 0.01299 8.22 0.71803 169.01 850 0.79893 - 171.88 5.21557 106.88 0.01314 9.31 0.71838 168.59 875 0.80421 - 172.62 5.09417 105.61 0.01326 10.44 0.71707 168.13 900 0.80983 - 173.40 5.04484 104.35 0.01340 11.44 0.71668 167.64 925 0.81256 - 174.09 4.90083 102.95 0.01357 12.52 0.71611 167.14 950 0.81780 - 174.81 4.83208 101.78 0.01377 13.37 0.71547 166.62 975 0.82118 - 175.53 4.75850 100.63 0.01398 14.40 0.71514 166.17 1000 0.82354 - 176.19 4.64462 99.41 0.01421 15.20 0.71375 165.68 1025 0.82863 - 176.93 4.59813 98.27 0.01449 15.97 0.71292 165.18 1050 0.82994 - 177.51 4.47959 97.05 0.01482 16.45 0.71160 164.72 1075 0.83369 - 178.12 4.41800 96.02 0.01512 16.27 0.71100 164.34 1100 0.83728 - 178.76 4.36819 95.02 0.01522 16.04 0.71111 163.96 1125 0.83914 - 179.35 4.25589 93.92 0.01522 16.13 0.71104 163.46 1150 0.84333 - 179.99 4.21812 92.91 0.01532 16.71 0.71144 162.96 1175 0.84582 179.42 4.14782 91.86 0.01540 17.23 0.71102 162.41 1200 0.84730 178.80 4.07433 90.84 0.01549 17.85 0.71091 161.96 1225 0.85017 178.20 4.03089 89.88 0.01563 18.56 0.71058 161.46 1250 0.85104 177.63 3.94928 88.92 0.01581 19.15 0.70945 160.92 1275 0.85363 177.01 3.91182 87.97 0.01603 19.78 0.70911 160.44 1300 0.85515 176.48 3.84948 86.97 0.01623 20.21 0.70802 159.92 1325 0.85660 175.94 3.79124 86.09 0.01644 20.62 0.70758 159.44 1350 0.85919 175.39 3.75583 85.18 0.01665 21.10 0.70645 158.93 1375 0.85982 174.86 3.68725 84.24 0.01685 21.41 0.70534 158.44 1400 0.86102 174.26 3.65116 83.37 0.01708 21.83 0.70492 157.95 1425 0.86270 173.77 3.60736 82.44 0.01733 22.12 0.70407 157.43 1450 0.86382 173.26 3.55564 81.56 0.01754 22.31 0.70310 156.95 1475 0.86525 172.73 3.51922 80.69 0.01778 22.70 0.70185 156.45 (continued) MMG3004NT1 RF Device Data Freescale Semiconductor 13 50 OHM TYPICAL CHARACTERISTICS Table 10. Common Emitter S - Parameters (VDC = 5 Vdc, IDC = 250 mA, TC = 25°C, 50 Ohm System) (continued) S11 S21 S12 S22 f MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 1500 0.86447 171.75 3.49706 79.68 0.01815 22.78 0.69775 156.18 1525 0.86543 171.19 3.46774 78.76 0.01841 22.92 0.69678 155.64 1550 0.86646 170.67 3.42587 77.92 0.01868 23.04 0.69558 155.13 1575 0.86663 170.18 3.38624 77.08 0.01889 23.19 0.69453 154.61 1600 0.86864 169.65 3.35249 76.23 0.01916 23.38 0.69264 154.06 1625 0.86848 169.14 3.31471 75.38 0.01940 23.47 0.69185 153.54 1650 0.86907 168.58 3.28145 74.52 0.01966 23.55 0.69110 153.02 1675 0.86995 168.06 3.24680 73.68 0.01990 23.70 0.68960 152.47 1700 0.86908 167.55 3.21301 72.89 0.02016 23.85 0.68912 152.02 1725 0.87075 166.99 3.17917 72.07 0.02043 23.94 0.68700 151.51 1750 0.87075 166.48 3.14872 71.28 0.02072 23.94 0.68638 151.05 1775 0.87095 165.94 3.11816 70.46 0.02101 24.02 0.68533 150.57 1800 0.87210 165.38 3.08624 69.66 0.02127 24.02 0.68377 150.09 1825 0.87206 164.86 3.05732 68.88 0.02156 24.07 0.68284 149.66 1850 0.87291 164.26 3.02693 68.07 0.02183 24.07 0.68136 149.22 1875 0.87225 163.73 2.99956 67.29 0.02214 24.03 0.68073 148.79 1900 0.87269 163.18 2.97218 66.53 0.02241 24.07 0.67941 148.37 1925 0.87341 162.62 2.94317 65.76 0.02272 24.05 0.67817 147.93 1950 0.87288 162.11 2.91922 65.01 0.02300 24.10 0.67684 147.54 1975 0.87403 161.54 2.88985 64.24 0.02333 23.99 0.67500 147.15 2000 0.87359 160.98 2.86616 63.49 0.02366 23.91 0.67393 146.75 2025 0.87242 160.38 2.84227 62.70 0.02397 23.80 0.67298 146.42 2050 0.87347 159.78 2.81763 61.98 0.02429 23.70 0.67159 146.04 2075 0.87337 159.25 2.79570 61.26 0.02465 23.66 0.67018 145.69 2100 0.87327 158.66 2.77239 60.53 0.02498 23.49 0.66901 145.36 2125 0.87318 158.11 2.75232 59.81 0.02536 23.32 0.66790 145.01 2150 0.87233 157.55 2.73039 59.07 0.02571 23.11 0.66702 144.69 2175 0.87291 156.95 2.70958 58.40 0.02602 22.93 0.66610 144.37 2200 0.87284 156.41 2.69236 57.69 0.02636 22.73 0.66519 144.03 2225 0.87305 155.87 2.67297 57.01 0.02672 22.55 0.66417 143.67 2250 0.87252 155.28 2.65614 56.29 0.02709 22.23 0.66378 143.30 2275 0.87193 154.76 2.63741 55.58 0.02744 22.01 0.66344 142.95 2300 0.87178 154.15 2.62034 54.89 0.02777 21.74 0.66387 142.57 2325 0.87159 153.64 2.60593 54.19 0.02812 21.52 0.66363 142.19 2350 0.87191 153.13 2.59024 53.50 0.02850 21.34 0.66365 141.75 2375 0.87202 152.60 2.57507 52.78 0.02891 21.08 0.66346 141.32 2400 0.87117 152.09 2.55841 52.08 0.02926 20.77 0.66342 140.87 2425 0.87077 151.53 2.54515 51.37 0.02967 20.45 0.66386 140.39 2450 0.87026 151.02 2.53215 50.65 0.03007 20.15 0.66405 139.92 2475 0.87003 150.54 2.51806 49.95 0.03047 19.77 0.66432 139.41 2500 0.86985 150.02 2.50328 49.24 0.03087 19.40 0.66490 138.85 2525 0.86940 149.49 2.49003 48.49 0.03126 18.98 0.66538 138.34 2550 0.86918 148.98 2.47736 47.77 0.03167 18.61 0.66582 137.78 2575 0.86921 148.48 2.46415 47.02 0.03208 18.11 0.66531 137.21 (continued) MMG3004NT1 14 RF Device Data Freescale Semiconductor 50 OHM TYPICAL CHARACTERISTICS Table 10. Common Emitter S - Parameters (VDC = 5 Vdc, IDC = 250 mA, TC = 25°C, 50 Ohm System) (continued) S11 S21 S12 S22 f MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 2600 0.86804 147.97 2.45098 46.28 0.03246 17.66 0.66588 136.62 2625 0.86808 147.46 2.43657 45.54 0.03287 17.21 0.66553 136.01 2650 0.86755 146.99 2.42271 44.82 0.03328 16.67 0.66525 135.46 2675 0.86741 146.47 2.41111 44.06 0.03360 16.15 0.66520 134.87 2700 0.86769 145.97 2.39656 43.31 0.03402 15.56 0.66461 134.26 2725 0.86693 145.47 2.38409 42.57 0.03438 15.04 0.66448 133.68 2750 0.86730 144.92 2.37136 41.82 0.03473 14.40 0.66407 133.13 2775 0.86724 144.42 2.35811 41.07 0.03504 13.77 0.66312 132.57 2800 0.86702 143.87 2.34590 40.30 0.03530 13.25 0.66208 132.00 2825 0.86694 143.37 2.33197 39.55 0.03566 12.69 0.66088 131.39 2850 0.86602 142.83 2.32062 38.80 0.03594 12.05 0.66087 130.80 2875 0.86701 142.28 2.30727 38.05 0.03623 11.45 0.65952 130.25 2900 0.86649 141.70 2.29559 37.30 0.03650 10.82 0.65833 129.72 2925 0.86653 141.16 2.28517 36.51 0.03678 10.22 0.65713 129.15 2950 0.86661 140.59 2.27190 35.74 0.03700 9.61 0.65548 128.55 2975 0.86565 140.01 2.26115 34.97 0.03725 9.07 0.65458 127.97 3000 0.86627 139.42 2.24868 34.20 0.03747 8.51 0.65272 127.41 MMG3004NT1 RF Device Data Freescale Semiconductor 15 2.2 x 2.2 1.35 0.6 2.6 5.3 0.8 NOTES: 1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE USED IN PCB LAYOUT DESIGN. 2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS POSSIBLE SHOULD BE PLACED ON THE BACKSIDE CENTER METAL GROUND LANDING PATTERN. 3. REFER TO FREESCALE APPLICATION NOTE AN2467 FOR ADDITIONAL PQFN PCB GUIDELINES. Figure 25. Recommended Mounting Configuration MMG3004NT1 16 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MMG3004NT1 RF Device Data Freescale Semiconductor 17 MMG3004NT1 18 RF Device Data Freescale Semiconductor MMG3004NT1 RF Device Data Freescale Semiconductor 19 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3100: General Purpose Amplifier Biasing REVISION HISTORY The following table summarizes revisions to this document. Revision Date 2 Mar. 2007 Description • Replaced Case Outline 1543 - 02 with updated 1543 - 03, Issue C, p. 1, 16 - 18 • Added VCC callout to Pin Connections 10, 11, and 12 in Fig. 1, Pin Connections, p. 3 • Updated Part Numbers in Table 8, Component Designations and Values, 900 MHz, to RoHS compliant part numbers, p. 5 • Corrected circuit board callouts, Vp to VBA and VCC to VSUPPLY, Fig. 5, 50 Ohm Test Circuit Component Layout, 900 MHz, p. 6 • Removed IDC value due to its variability over temperature, Figs. 12 - 13, IS - 95 Adjacent Channel Power Ratio versus Output Power, 900 MHz, p. 8 • Updated Part Numbers in Table 9, Component Designations and Values, 1900 - 2200 MHz, to RoHS compliant part numbers, p. 9 • Corrected circuit board callouts, Vp to VBA and VCC to VSUPPLY, Fig. 15, 50 Ohm Test Circuit Component Layout, 1900 - 2200 MHz, p. 10 • Removed IDC value due to its variability over temperature, Figs. 22 - 23, IS - 95 Adjacent Channel Power Ratio versus Output Power, 1900 - 2200 MHz, and Fig. 24, Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power, 1900 - 2200 MHz, p. 12 • Replaced Table 10, S - Parameters, p. 13 - 15 • Added Product Documentation and Revision History, p. 19 3 Mar. 2008 • Corrected Tape and Reel information from 12 mm, 7 inch Reel to 16 mm, 13 inch Reel, p. 1 • Removed Footnote 2, Continuous voltage and current applied to device, from Table 2, Maximum Ratings, p. 1 • Corrected Fig. 24, Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power y - axis (ACPR) unit of measure to dBc, p. 12 • Corrected S - Parameter table frequency column label to read “MHz” versus “GHz” and corrected frequency values from GHz to MHz, p. 13, 14, 15 MMG3004NT1 20 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2005-2008. All rights reserved. MMG3004NT1 Document Number: RF Device Data MMG3004NT1 Rev. 3, 3/2008 Freescale Semiconductor 21