Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MRF6S20010N
Rev. 4, 1/2014
RF Power Field Effect Transistors
MRF6S20010NR1
MRF6S20010GNR1
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for Class A or Class AB general purpose applications with
frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation
and multipurpose amplifier applications.
 Typical Two--Tone Performance @ 2170 MHz: VDD = 28 Volts, IDQ =
130 mA, Pout = 10 Watts PEP
Power Gain — 15.5 dB
Drain Efficiency — 36%
IMD — --34 dBc
 Typical 2--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 130 mA,
Pout = 1 Watt Avg., Full Frequency Band (2130--2170 MHz), Channel
Bandwidth = 3.84 MHz. PAR = 8.5 dB @ 0.01% Probability
Power Gain — 15.5 dB
Drain Efficiency — 15%
IM3 @ 10 MHz Offset — --47 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — --49 dBc in 3.84 MHz Channel Bandwidth
 Typical Single--Carrier N--CDMA Performance: VDD = 28 Volts, IDQ =
130 mA, Pout = 1 Watt Avg., Full Frequency Band (1930--1990 MHz),
IS--95 (Pilot, Sync, Paging, Traffic Codes 8 through 13), Channel
Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 15.5 dB
Drain Efficiency — 16%
ACPR @ 885 kHz Offset = --60 dBc in 30 kHz Bandwidth
 Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 130 mA, Pout =
4 Watts Avg., Full Frequency Band (1805--1880 MHz)
Power Gain — 16 dB
Drain Efficiency — 33%
EVM — 1.3% rms
 Capable of Handling 5:1 VSWR, @ 28 Vdc, 2000 MHz, 10 Watts CW
Output Power
Features
 Characterized with Series Equivalent Large--Signal Impedance Parameters
 Internally Matched for Ease of Use
 Qualified Up to a Maximum of 32 VDD Operation
 Integrated ESD Protection
 225C Capable Plastic Package
 In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13--inch Reel.
1600--2200 MHz, 10 W, 28 V
GSM, GSM EDGE
SINGLE N--CDMA
2 x W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
TO--270--2
PLASTIC
MRF6S20010NR1
TO--270G--2
PLASTIC
MRF6S20010GNR1
RFin/VGS 2
1 RFout/VDS
(Top View)
Note: The backside of the package is the
source terminal for the transistor.
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +68
Vdc
Gate--Source Voltage
VGS
--0.5, +12
Vdc
Storage Temperature Range
Tstg
--65 to +150
C
Case Operating Temperature
TC
150
C
Operating Junction Temperature (1,2)
TJ
225
C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
 Freescale Semiconductor, Inc., 2005--2006, 2008--2009, 2014. All rights reserved.
RF Device Data
Freescale Semiconductor
1
Table 2. Thermal Characteristics
Characteristic
Symbol
Thermal Resistance, Junction to Case
Case Temperature 78C, 1 W CW
Case Temperature 79C, 10 W PEP, Two--Tone Test
Value (1,2)
RJC
Unit
C/W
2.3
2.9
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1A
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
IV
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
C
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
Adc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
500
Adc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 40 Adc)
VGS(th)
1.5
2.2
3.5
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 130 mAdc, Measured in Functional Test)
VGS(Q)
2
2.8
4
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 0.4 Adc)
VDS(on)
—
0.33
0.4
Vdc
Output Capacitance
(VDS = 28 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
20
—
pF
Reverse Transfer Capacitance
(VDS = 28 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
11.6
—
pF
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc  30 mV(rms)ac @ 1 MHz)
Ciss
—
120
—
pF
Characteristic
Off Characteristics
On Characteristics
Dynamic Characteristics (3)
Functional Tests (4) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 130 mA, Pout = 10 W PEP, f1 = 2170 MHz,
f2 = 2170.1 MHz, Two--Tone Test
Power Gain
Gps
14
15.5
17
dB
Drain Efficiency
D
33
36
—
%
Intermodulation Distortion
IMD
—
--34
--28
dBc
Input Return Loss
IRL
—
--15
--9
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Part internally matched on input.
4. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GN) parts.
(continued)
MRF6S20010NR1 MRF6S20010GNR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical 2--Carrier W--CDMA Performances (In Freescale CDMA Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 130 mA, Pout =
1 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ 10 MHz Offset.
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
—
15.5
—
dB
Drain Efficiency
D
—
15
—
%
Gain Flatness in 30 MHz Bandwidth @ Pout = 1 W CW
GF
—
0.3
—
dB
Intermodulation Distortion
IM3
—
--47
—
dBc
ACPR
—
--49
—
dBc
Adjacent Channel Power Ratio
Typical N--CDMA Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 130 mA, Pout = 1 W Avg.,
1930 MHz<Frequency<1990 MHz, Single--Carrier N--CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel
Bandwidth @ 885 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF
Power Gain
Gps
—
15.5
—
dB
Drain Efficiency
D
—
16
—
%
Gain Flatness in 30 MHz Bandwidth @ Pout = 1 W CW
GF
—
0.3
—
dB
ACPR
—
--60
—
dBc
Adjacent Channel Power Ratio
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 130 mA, Pout = 4 W Avg.,
1805--1880 MHz, EDGE Modulation
Power Gain
Gps
—
16
—
dB
Drain Efficiency
D
—
33
—
%
Gain Flatness in 30 MHz Bandwidth @ Pout = 4 W CW
GF
—
0.3
—
dB
Error Vector Magnitude
EVM
—
1.3
—
% rms
Spectral Regrowth at 400 kHz Offset
SR1
—
--60
—
dBc
Spectral Regrowth at 600 kHz Offset
SR2
—
--70
—
dBc
MRF6S20010NR1 MRF6S20010GNR1
RF Device Data
Freescale Semiconductor
3
R1
VBIAS
VSUPPLY
+
R2
C11
C1
Z9
C7
C3
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z10
Z8
C2
C5
Z16
R3
RF
INPUT
C4
Z11
Z12
Z13
Z14
Z15
RF
OUTPUT
C6
DUT
Z17
C8
Z1, Z15
Z2
Z3, Z5
Z4
Z6
Z7
Z8
Z9
0.066 x 0.480 Microstrip
0.066 x 0.765 Microstrip
0.066 x 0.340 x 0.050 Taper
0.340 x 0.295 Microstrip
0.020 x 0.060 Microstrip
0.0905 x 0.280 Microstrip
0.0905 x 0.330 Microstrip
0.050 x 0.980 Microstrip
Z10
Z11
Z12
Z13
Z14
Z16, Z17
PCB
C9
C10
0.930 x 0.350 Microstrip
0.930 x 0.400 Microstrip
0.050 x 0.105 Microstrip
0.405 x 0.242 Microstrip
0.066 x 0.740 Microstrip
0.050 x 1.250 Microstrip
Taconic RF--35, 0.030, r = 3.5
Figure 2. MRF6S20010NR1 Test Circuit Schematic — 2110--2170 MHz
Table 6. MRF6S20010NR1 Test Circuit Component Designations and Values — 2110--2170 MHz
Part
Description
Part Number
Manufacturer
C1
100 nF Chip Capacitor
CDR33BX104AKYS
Kemet
C2, C6
4.7 pF Chip Capacitors
ATC100B4R7CT500XT
ATC
C3, C7, C8
9.1 pF Chip Capacitors
ATC100B9R1CT500XT
ATC
C4, C5, C9, C10
10 F, 50 V Chip Capacitors
GRM55DR61H106KA88B
Murata
C11
10 F, 35 V Tantalum Chip Capacitor
T490D106K035AT
Kemet
R1
1 k, 1/4 W Chip Resistor
CRCW12061001FKEA
Vishay
R2
10 k, 1/4 W Chip Resistor
CRCW12061002FKEA
Vishay
R3
10 , 1/4 W Chip Resistor
CRCW120610R0FKEA
Vishay
MRF6S20010NR1 MRF6S20010GNR1
4
RF Device Data
Freescale Semiconductor
R2 C1
C11
C3
C4
R1
C7
C5
R3
C2
CUT OUT AREA
C6
C9
C10
C8
MRF6S20010N, Rev. 2
Figure 3. MRF6S20010NR1 Test Circuit Component Layout — 2110--2170 MHz
MRF6S20010NR1 MRF6S20010GNR1
RF Device Data
Freescale Semiconductor
5
--5
40
D
--10
36
28
--15
IRL
32
--20
VDD = 28 Vdc, Pout = 10 W (PEP)
IDQ = 130 mA, 100 kHz Tone Spacing
--25
24
--30
20
IMD
2050
--35
Gps
16
--40
2130
2090
2170
IMD, INTERMODULATION DISTORTION (dBc)
IRL, INPUT RETURN LOSS (dB)
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
TYPICAL CHARACTERISTICS — 2110--2170 MHz
2210
f, FREQUENCY (MHz)
Figure 4. Two--Tone Wideband Performance
@ Pout = 10 Watts (PEP)
18
--10
162.5 mA
16
130 mA
15
97.5 mA
14
65 mA
13
VDD = 28 Vdc, f = 2170 MHz
Two--Tone Measurements
100 kHz Tone Spacing
12
11
IMD, INTERMODULATION DISTORTION (dBc)
195 mA
--40
162.5 mA
--50
97.5 mA
130 mA
0.1
1
10
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two--Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation
Distortion versus Output Power
VDD = 28 Vdc, IDQ = 130 mA
f1 = 2170 MHz, f2 = 2170.1 MHz
Two--Tone Measurements
3rd Order
--40
7th Order
5th Order
--60
--70
0.1
IDQ = 65 mA
--30
Pout, OUTPUT POWER (WATTS) PEP
--30
--50
--20
30
--10
--20
VDD = 28 Vdc, f = 2170 MHz
Two--Tone Measurements
100 kHz Tone Spacing
--60
10
1
0.1
IMD, INTERMODULATION DISTORTION (dBc)
Gps, POWER GAIN (dB)
17
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
IDQ = 195 mA
1
10
30
30
--20
--30
--40
3rd Order
VDD = 28 Vdc, Pout = 10 W (PEP)
IDQ = 130 mA, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2170 MHz
--50
5th Order
--60
7th Order
--70
0.1
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
TWO--TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Output Power
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
MRF6S20010NR1 MRF6S20010GNR1
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS — 2110--2170 MHz
18
41
Actual
39
VDD = 28 Vdc, IDQ = 130 mA
Pulsed CW, 8 sec(on), 1 msec(off)
f = 2170 MHz
37
22
20
24
26
28
17
TC = --30_C
16
25_C
15
85_C
14
30
D
20
12
10
11
0.1
30
0
1
10
30
Pout, OUTPUT POWER (WATTS) CW
Figure 9. Pulsed CW Output Power versus
Input Power
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
27
15
18
14
13
VDD = 24 V
28 V
11
32 V
3
6
9
12
15
18
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
21
6
VDD = 28 Vdc
Pout = 10 W (PEP)
IDQ = 130 mA
S21
3
9
0
0
--3
--9
--6
--18
--9
S11
--27
IDQ = 130 mA
f = 2170 MHz
0
85_C 40
Pin, INPUT POWER (dBm)
12
60
--30_C
25_C 50
VDD = 28 Vdc
IDQ = 130 mA
f = 2170 MHz
13
16
10
Gps
--36
400
D DRAIN EFFICIENCY (%)
P1dB = 40.9 dBm (12.26 W)
43
70
800
1200
1600
S11 (dB)
Gps, POWER GAIN (dB)
45
35
Gps, POWER GAIN (dB)
Ideal
P3dB = 41.5 dBm (14.2 W)
S21 (dB)
Pout, OUTPUT POWER (dBm)
47
--12
2000
2400
2800
--15
3200
f, FREQUENCY (MHz)
Figure 12. Broadband Frequency Response
MRF6S20010NR1 MRF6S20010GNR1
RF Device Data
Freescale Semiconductor
7
15.8
17
Gps, POWER GAIN (dB)
15.6
16
Gps
15.4
VDD = 28 Vdc, Pout = 1 W (Avg.), IDQ = 130 mA
2--Carrier W--CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
15.2
15
15
D
14
--45
14.8
--47
14.6
IM3
--49
ACPR --51
14.4
14.2
IRL
14
2060
2080
2100
2120
2140
2160
2180
2200
--53
--55
2220
--10
--12
--14
--16
--18
IRL, INPUT RETURN LOSS (dB)
18
IM3 (dBc), ACPR (dBc)
16
D, DRAIN
EFFICIENCY (%)
W--CDMA TYPICAL CHARACTERISTICS — 2110--2170 MHz
f, FREQUENCY (MHz)
49
42
35
28
--20
VDD = 28 Vdc, IDQ = 130 mA
f1 = 2165 MHz, f2 = 2175 MHz
2--Carrier W--CDMA, 10 MHz Carrier
Spacing, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
21
--25
--30
--35
D
Gps
14
--45
IM3
ACPR
7
0
0.1
--40
TC = 25_C
1
IM3 (dBc), ACPR (dBc)
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
Figure 13. 2--Carrier W--CDMA Broadband Performance
@ Pout = 1 Watt Avg.
--50
10
20
--55
Pout, OUTPUT POWER (WATTS) AVG.
Figure 14. 2--Carrier W--CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
MRF6S20010NR1 MRF6S20010GNR1
8
RF Device Data
Freescale Semiconductor
W--CDMA TEST SIGNAL
100
+20
0
--10
1
(dB)
PROBABILITY (%)
10
0.1
W--CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ 5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ 10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
0.01
0
2
4
6
--20
--30
--40
--50
--70
--ACPR in
+ACPR in
3.84 MHz BW 3.84 MHz BW
--IM3 in
3.84 MHz BW
--80
--25
--20
--60
0.001
0.0001
3.84 MHz
Channel BW
+30
8
10
PEAK--TO--AVERAGE (dB)
Figure 15. CCDF W--CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single--Carrier Test Signal
--15
--10
--5
0
5
10
+IM3 in
3.84 MHz BW
15
20
25
f, FREQUENCY (MHz)
Figure 16. 2-Carrier W-CDMA Spectrum
MRF6S20010NR1 MRF6S20010GNR1
RF Device Data
Freescale Semiconductor
9
N--CDMA TYPICAL CHARACTERISTICS — 1930--1990 MHz
R1
VBIAS
VSUPPLY
+
R2
C11
C1
C7
Z7
C3
Z1
Z2
Z3
Z4
Z5
C2
C5
Z17
R3
RF
INPUT
C4
Z8
Z6
Z9
Z10
Z11
Z12
Z13
Z14
RF
OUTPUT
Z16
Z15
C6
DUT
Z18
C8
Z1
Z2
Z3
Z4
Z5, Z6
Z7
Z8
Z9
Z10
0.066 x 0.480 Microstrip
0.066 x 0.728 Microstrip
0.354 x 0.512 Microstrip
0.066 x 0.079 Microstrip
0.591 x 0.335 Microstrip
0.050 x 0.980 Microstrip
1.142 x 0.350 Microstrip
1.142 x 0.516 Microstrip
0.433 x 0.276 Microstrip
Z11
Z12
Z13
Z14
Z15
Z16
Z17, Z18
PCB
C9
C10
0.244 x 0.423 Microstrip
0.244 x 0.066 x 0.089 Taper
0.066 x 0.182 Microstrip
0.066 x 0.263 Microstrip
0.236 x 0.118 Microstrip
0.066 x 0.099 Microstrip
0.050 x 1.250 Microstrip
Taconic RF--35, 0.030, r = 3.5
Figure 17. MRF6S20010NR1 Test Circuit Schematic — 1930--1990 MHz
Table 7. MRF6S20010NR1 Test Circuit Component Designations and Values — 1930--1990 MHz
Part
Description
Part Number
Manufacturer
C1
100 nF Chip Capacitor
12065C104KAT
AVX
C2, C6
4.7 pF Chip Capacitors
ATC100B4R7BT500XT
ATC
C3, C7, C8
9.1 pF Chip Capacitors
ATC100B9R1BT500XT
ATC
C4, C5, C9, C10
10 F Chip Capacitors
C5750X5R1H106MT
TDK
C11
10 F, 35 V Tantalum Chip Capacitor
TAJD106K035R
AVX
R1, R2
10 k, 1/4 W Chip Resistors
CRCW12061002FKEA
Vishay
R3
10 , 1/4 W Chip Resistor
CRCW120610R0FKEA
Vishay
MRF6S20010NR1 MRF6S20010GNR1
10
RF Device Data
Freescale Semiconductor
N--CDMA TYPICAL CHARACTERISTICS — 1930--1990 MHz
VDD
VGS
R2 C1
C11
R1
C4
C3
C7
C5
R3
C6
CUT OUT AREA
C2
C8
C9
C10
MRF6S20010N
Rev 0
Figure 18. MRF6S20010NR1 Test Circuit Component Layout — 1930--1990 MHz
MRF6S20010NR1 MRF6S20010GNR1
RF Device Data
Freescale Semiconductor
11
N--CDMA TYPICAL CHARACTERISTICS — 1930--1990 MHz
15.6
18
D
17
16
15
15.5
Gps
15.4
--59
15.3
15.2
ACPR
--59.4
--8
--59.8
--11
--60.2
15.1
--60.6
15
IRL
14.9
--61
1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000
f, FREQUENCY (MHz)
--14
--17
--20
IRL, INPUT RETURN LOSS (dB)
Gps, POWER GAIN (dB)
15.7
D, DRAIN
EFFICIENCY (%)
15.8
19
VDD = 28 Vdc, Pout = 1 W (Avg.), IDQ = 500 mA
N--CDMA IS--95 (Pilot, Sync, Paging, Traffic
Codes 8 Through 13)
ACPR (dBc)
15.9
Figure 19. Single--Carrier N--CDMA Broadband Performance
@ Pout = 1 Watt Avg.
50
--45
--50
30
D
--55
20
ACPR
10
0
0.1
1
ACPR (dBc)
D, DRAIN EFFICIENCY (%)
40
--40
VDD = 28 Vdc, IDQ = 130 mA
f = 1960 MHz, N--CDMA IS--95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
--60
10
--65
Pout, OUTPUT POWER (WATTS) AVG.
Figure 20. Single--Carrier N--CDMA ACPR and Drain
Efficiency versus Output Power
MRF6S20010NR1 MRF6S20010GNR1
12
RF Device Data
Freescale Semiconductor
N--CDMA TEST SIGNAL
--10
100
--20
--30
1
--40
--50
0.1
IS--95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
885 kHz Offset. PAR = 9.8 dB @ 0.01% Probability
on CCDF.
0.01
0.001
(dB)
PROBABILITY (%)
10
--60
--70
--80
--90
0.0001
0
2
4
6
8
PEAK--TO--AVERAGE (dB)
Figure 21. Single--Carrier CCDF N--CDMA
10
1.2288 MHz
Channel BW
.. ..................................................
. . . .
............
..
..
..
..
..
..
.
..
...
..
..
.
..
.
......................
.........
...........
....
. ..............
. ...
...............
.
........
.
.....
.
.
.
.
.
............
.
.
.
.
.
.
..
.
..
.
.
.........
.....
.
..
.
......
......
......
.
.
..........
.
.
.
.
.
.
.
.
.
.........
............. .
.
.
.
....... --ACPR in 30 kHz
.
.
.
.
..
....
.
.
+ACPR in 30 kHz ...................
.......
.. ............
.
.
...........
...
................
.
.
.
.
.
.
Integrated BW
Integrated BW
..
........
......
..........
......
............
...........
--100
--110
--3.6 --2.9 --2.2
--1.5
--0.7
0
0.7
1.5
2.2
2.9
3.6
f, FREQUENCY (MHz)
Figure 22. Single--Carrier N--CDMA Spectrum
MRF6S20010NR1 MRF6S20010GNR1
RF Device Data
Freescale Semiconductor
13
GSM EDGE TYPICAL CHARACTERISTICS — 1805--1880 MHz
R1
VBIAS
VSUPPLY
+
R2
C11
C1
C7
Z9
C3
Z1
Z2
Z3
Z4
Z5
Z6
Z7
C5
Z17
R3
RF
INPUT
C4
Z10
Z8
C2
Z11
Z12
Z13
Z14
Z15
Z16
RF
OUTPUT
C6
DUT
Z18
C8
Z1, Z16
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
0.066 x 0.480 Microstrip
0.066 x 0.137 Microstrip
0.236 x 0.236 Microstrip
0.066 x 0.354 Microstrip
0.551 x 0.512 Microstrip
0.066 x 0.079 Microstrip
0.591 x 0.189 Microstrip
0.591 x 0.334 Microstrip
0.050 x 0.980 Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
Z17, Z18
PCB
C9
C10
1.142 x 0.350 Microstrip
1.142 x 0.516 Microstrip
0.433 x 0.276 Microstrip
0.276 x 0.157 Microstrip
0.236 x 0.433 Microstrip
0.066 x 0.104 Microstrip
0.050 x 1.250 Microstrip
Taconic RF--35, 0.030, r = 3.5
Figure 23. MRF6S20010NR1 Test Circuit Schematic — 1805--1880 MHz
Table 8. MRF6S20010NR1 Test Circuit Component Designations and Values —1805--1880 MHz
Part
Description
Part Number
Manufacturer
C1
100 nF Chip Capacitor
12065C104KAT
AVX
C2, C6
4.7 pF Chip Capacitors
ATC100B4R7BT500XT
ATC
C3, C7, C8
9.1 pF Chip Capacitors
ATC100B9R1BT500XT
ATC
C4, C5, C9, C10
10 F Chip Capacitors
C5750X5R1H106MT
TDK
C11
10 F, 35 V Tantalum Chip Capacitor
TAJD106K035R
AVX
R1, R2
10 k, 1/4 W Chip Resistors
CRCW12061001FKEA
Vishay
R3
10 , 1/4 W Chip Resistor
CRCW120610R0FKEA
Vishay
MRF6S20010NR1 MRF6S20010GNR1
14
RF Device Data
Freescale Semiconductor
GSM EDGE TYPICAL CHARACTERISTICS — 1805--1880 MHz
VDD
VGS
R2 C1
C11
R1
C4
C3
C7
C5
R3
C6
CUT OUT AREA
C2
C8
C9
C10
MRF6S20010N
Rev. 0
Figure 24. MRF6S20010NR1 Test Circuit Component Layout — 1805--1880 MHz
MRF6S20010NR1 MRF6S20010GNR1
RF Device Data
Freescale Semiconductor
15
Gps
16
50
0
40
--10
D
15
30
IRL
14
20
D, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
17
--20
--30
VDD = 28 Vdc
IDQ = 130 mA
13
10
1800 1810 1820 1830 1840 1850 1860 1870 1880 1890 1900
IRL, INPUT RETURN LOSS (dB)
GSM EDGE TYPICAL CHARACTERISTICS — 1805--1880 MHz
--40
f, FREQUENCY (MHz)
Figure 25. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ Pout = 4 Watts
60
VDD = 28 Vdc
IDQ = 130 mA
f = 1840 MHz
5
50
4
40
3
30
D
20
2
EVM
1
10
0
D, DRAIN EFFICIENCY (%)
EVM, ERROR VECTOR MAGNITUDE (% ms)
6
0
0.1
1
10
Pout, OUTPUT POWER (WATTS) AVG.
Figure 26. Error Vector Magnitude and Drain
Efficiency versus Output Power
GSM EDGE TEST SIGNAL
--10
VDD = 28 Vdc
IDQ = 130 mA
f = 1840 MHz
--55
--20
Reference Power
VBW = 30 kHz
Sweep Time = 70 ms
RBW = 30 kHz
--30
--40
--60
--50
SR @ 400 kHz
--65
(dB)
SPECTRAL REGROWTH (dBc)
--50
--60
--70
--70
--80
--90
SR @ 600 kHz
--75
400 kHz
400 kHz
600 kHz
600 kHz
--100
--110
--80
0.1
1
10
Center 1.96 GHz
200 kHz
Span 2 MHz
Pout, OUTPUT POWER (WATTS)
Figure 27. Spectral Regrowth at 400 kHz and
600 kHz versus Output Power
Figure 28. EDGE Spectrum
MRF6S20010NR1 MRF6S20010GNR1
16
RF Device Data
Freescale Semiconductor
2170 MHz
Zo = 25 
VDD = 28 Vdc, IDQ = 130 mA, Pout = 10 W PEP
f = 2170 MHz
Zload
f = 2110 MHz
f
MHz
Zsource

Zload

2110
3.619 + j0.792
2.544 + j3.068
2140
3.918 + j0.797
2.673 + j3.291
2170
4.087 + j0.558 2.818 + j3.406
f = 2170 MHz
f = 2110 MHz
Zsource
Zo = 25 
1900 MHz
VDD = 28 Vdc, IDQ = 130 mA, Pout = 1 W Avg.
f = 1990 MHz
Zload
f = 1930 MHz
f = 1990 MHz
Zsource
f = 1930 MHz
f
MHz
Zsource

Zload

1930
9.237 + j1.849
2.770 + j3.497
1960
9.521 + j2.144
2.754 + j3.668
1990
9.889 + j2.434 2.772 + j3.833
1800 MHz
VDD = 28 Vdc, IDQ = 130 mA, Pout = 4 W Avg.
Zo = 25 
f
MHz
f = 1880 MHz
Zload
f = 1805 MHz
f = 1805 MHz
Zsource
Zsource

Zload

1805
13.237 + j5.810 2.445 + j3.698
1840
13.953 + j6.084 2.542 + j3.942
1880
14.858 + j6.279 2.695 + j4.170
f = 1880 MHz
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
= Test circuit impedance as measured
from drain to ground.
Z
load
Figure 29. Series Equivalent Source and Load Impedance
MRF6S20010NR1 MRF6S20010GNR1
RF Device Data
Freescale Semiconductor
17
Table 9. Common Source Scattering Parameters (VDD = 28 V, IDQ = 126 mA, TA = 25C, 50 ohm system)
f
MHz
S11
S21
S12
S22
|S11|

|S21|

|S12|

|S22|

500
0.984
--178.1
1.195
42.42
0.001
--129.1
0.875
--116.3
550
0.986
--179.0
0.947
40.48
0.001
--159.2
0.892
--121.6
600
0.985
179.9
0.747
39.66
0.001
147.4
0.905
--125.9
650
0.986
178.9
0.581
39.89
0.001
119.1
0.913
--129.9
700
0.982
177.9
0.446
41.80
0.001
108.1
0.927
--133.4
750
0.983
177.2
0.336
46.70
0.002
102.9
0.935
--136.4
800
0.983
176.5
0.248
56.02
0.002
96.99
0.941
--139.5
850
0.979
175.5
0.188
72.74
0.003
97.40
0.947
--141.9
900
0.980
174.8
0.168
96.69
0.003
94.63
0.951
--144.4
950
0.977
174.0
0.183
119.3
0.004
91.92
0.955
--146.6
1000
0.978
173.2
0.223
134.3
0.004
92.80
0.960
--148.6
1050
0.972
172.4
0.276
142.2
0.004
89.92
0.962
--150.5
1100
0.972
171.4
0.335
146.4
0.005
89.90
0.966
--152.2
1150
0.963
170.8
0.396
148.5
0.005
87.51
0.977
--153.7
1200
0.964
169.9
0.461
148.8
0.006
89.25
0.971
--155.2
1250
0.956
169.0
0.531
148.2
0.007
86.98
0.977
--156.8
1300
0.948
167.8
0.604
146.9
0.007
85.08
0.982
--157.9
1350
0.939
167.0
0.685
144.8
0.008
82.40
0.986
--159.5
1400
0.927
165.7
0.772
142.2
0.008
79.69
0.988
--160.7
1450
0.910
164.5
0.869
138.7
0.009
77.79
0.994
--162.1
1500
0.889
163.2
0.975
134.7
0.010
75.79
0.991
--163.4
1550
0.861
161.9
1.093
129.7
0.010
72.86
0.993
--164.7
1600
0.821
160.9
1.221
123.8
0.011
69.89
0.996
--166.0
1650
0.780
160.1
1.356
116.7
0.012
63.71
0.984
--167.4
1700
0.722
160.6
1.491
108.3
0.013
57.70
0.985
--168.5
1750
0.666
162.5
1.606
98.77
0.014
49.85
0.977
--169.6
1800
0.618
167.0
1.687
88.09
0.014
41.19
0.970
--170.8
1850
0.603
173.3
1.706
76.98
0.013
32.65
0.958
--171.3
1900
0.614
179.7
1.673
66.08
0.012
25.40
0.954
--171.9
1950
0.654
--175.6
1.591
55.96
0.011
20.73
0.945
--172.3
2000
0.701
--173.5
1.484
47.04
0.010
15.11
0.947
--172.6
2050
0.747
--172.7
1.364
39.29
0.008
10.13
0.947
--173.0
2100
0.783
--172.6
1.242
32.87
0.006
6.333
0.945
--173.6
2150
0.816
--172.9
1.136
27.69
0.004
15.63
0.944
--173.9
2200
0.842
--173.6
1.042
23.26
0.004
42.20
0.944
--174.2
2250
0.864
--174.2
0.961
19.26
0.005
57.76
0.948
--174.6
2300
0.882
--175.0
0.888
15.75
0.006
62.56
0.948
--175.2
2350
0.894
--175.7
0.822
12.69
0.008
59.72
0.949
--175.7
2400
0.906
--176.4
0.764
9.857
0.009
49.09
0.951
--176.1
2450
0.910
--176.9
0.712
7.587
0.008
39.24
0.955
--176.5
(continued)
MRF6S20010NR1 MRF6S20010GNR1
18
RF Device Data
Freescale Semiconductor
Table 9. Common Source Scattering Parameters (VDD = 28 V, IDQ = 126 mA, TA = 25C, 50 ohm system) (continued)
f
MHz
S11
S21
S12
S22
|S11|

|S21|

|S12|

|S22|

2500
0.923
--177.5
0.666
5.462
0.006
42.56
0.957
--177.2
2550
0.927
--178.0
0.625
3.680
0.006
52.25
0.962
--177.8
2600
0.937
--178.8
0.591
1.864
0.006
60.26
0.961
--178.4
2650
0.937
--179.0
0.559
0.237
0.007
64.14
0.964
--179.1
2700
0.942
--179.8
0.529
--1.378
0.007
65.62
0.964
--179.6
2750
0.945
--179.9
0.504
--2.768
0.007
64.71
0.964
179.7
2800
0.946
179.5
0.479
--4.088
0.007
67.58
0.966
179.4
2850
0.950
179.3
0.456
--5.412
0.007
75.44
0.966
178.8
2900
0.949
178.8
0.436
--6.305
0.008
82.04
0.964
178.3
2950
0.952
178.5
0.419
--7.279
0.009
83.60
0.967
177.9
3000
0.950
178.4
0.402
--8.087
0.011
83.41
0.968
177.4
3050
0.958
177.9
0.387
--9.138
0.012
81.35
0.964
176.8
3100
0.953
177.7
0.373
--9.904
0.013
77.45
0.969
176.4
3150
0.957
177.2
0.362
--10.86
0.014
70.98
0.970
176.2
3200
0.960
177.4
0.350
--11.79
0.013
67.00
0.970
175.5
MRF6S20010NR1 MRF6S20010GNR1
RF Device Data
Freescale Semiconductor
19
PACKAGE DIMENSIONS
MRF6S20010NR1 MRF6S20010GNR1
20
RF Device Data
Freescale Semiconductor
MRF6S20010NR1 MRF6S20010GNR1
RF Device Data
Freescale Semiconductor
21
MRF6S20010NR1 MRF6S20010GNR1
22
RF Device Data
Freescale Semiconductor
MRF6S20010NR1 MRF6S20010GNR1
RF Device Data
Freescale Semiconductor
23
MRF6S20010NR1 MRF6S20010GNR1
24
RF Device Data
Freescale Semiconductor
MRF6S20010NR1 MRF6S20010GNR1
RF Device Data
Freescale Semiconductor
25
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
 AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
 AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
 Electromigration MTTF Calculator
 RF High Power Model
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
2
Dec. 2008
Description
 Changed Storage Temperature Range in Max Ratings table from --65 to +175 to --65 to +150 for
standardization across products, p. 1
 Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150C, p. 1
 Operating Junction Temperature increased from 200C to 225C in Maximum Ratings table, related
“Continuous use at maximum temperature will affect MTTF” footnote added and changed 200C to 225C
in Capable Plastic Package bullet, p. 1
 Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), On Characteristics table, p. 2
 Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection,
Dynamic Characteristics table, p. 2
 Updated Part Numbers in Tables 6, 7, 8, Component Designations and Values, to RoHS compliant part
numbers, p. 4, 10, 14
 Adjusted scale for Fig. 7, Intermodulation Distortion Products versus Tone Spacing, to better match the
device’s capabilities, p. 6
 Removed lower voltage tests from Fig. 10, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 7
 Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed
operating characteristics and location of MTTF calculator for device, p. 7
 Removed ALT1 definition from Fig. 21, Single--Carrier CCDF N--CDMA, given no supporting performance
information provided, p. 13
 Replaced Case Outline 1265--08 with 1265--09, Issue K, p. 1, 20--22. Corrected cross hatch pattern in
bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed
from Min--Max .290--.320 to .290 Min; E3 changed from Min--Max .150--.180 to .150 Min). Added JEDEC
Standard Package Number.
 Replaced Case Outline 1265A--02 with 1265A--03, Issue C, p. 1, 23--25. Corrected cross hatch pattern
and its dimensions (D2 and E2) on source contact (D2 changed from Min--Max .290--.320 to .290 Min; E3
changed from Min--Max .150--.180 to .150 Min). Added pin numbers. Corrected mm dimension L for
gull--wing foot from 4.90--5.06 Min--Max to 0.46--0.61 Min--Max. Added JEDEC Standard Package
Number.
 Added Product Documentation and Revision History, p. 26
3
June 2009
 Corrected decimal placement for Ciss (changed 0.12 pF to 120 pF) and Coss (changed 0.02 pF to 20 pF),
Dynamic Characteristics table, p. 2
 Added footnote, Measurement made with device in straight lead configuration before any lead forming
operation is applied, to Functional Tests table, p. 2.
 Added AN3789, Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages to
Product Documentation, Application Notes, p. 26
 Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 26
(continued)
MRF6S20010NR1 MRF6S20010GNR1
26
RF Device Data
Freescale Semiconductor
REVISION HISTORY (cont.)
Revision
Date
Description
4
Jan. 2014
 Table 2. Thermal Characteristics: CW thermal value changed from 2.5 to 2.3C/W to reflect recent thermal
test results; two--tone test W PEP thermal value changed from 5.9 to 2.9C/W to reflect recent thermal test
results. Thermal value changes are based on an improvement in the RF feedback resistor design, p. 2
 Table 3, ESD Protection Characteristics, removed the word “Minimum” after the ESD class rating. ESD
ratings are characterized during new product development but are not 100% tested during production.
ESD ratings provided in the data sheet are intended to be used as a guideline when handling ESD
sensitive devices, p. 2
 Fig. 12, MTTF versus Junction Temperature removed, p. 7. Refer to the device’s MTTF Calculator
available at freescale.com/RFpower. Go to Design Resources > Software and Tools.
MRF6S20010NR1 MRF6S20010GNR1
RF Device Data
Freescale Semiconductor
27
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E 2005--2006, 2008--2009, 2014 Freescale Semiconductor, Inc.
MRF6S20010NR1 MRF6S20010GNR1
Document Number: MRF6S20010N
Rev. 4, 1/2014
28
RF Device Data
Freescale Semiconductor