Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MRFE6S9046N
Rev. 0, 5/2009
RF Power Field Effect Transistors
MRFE6S9046NR1
MRFE6S9046GNR1
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 920 to 960 MHz. Suitable for CDMA and multicarrier amplifier
applications.
• Typical GSM Performance: VDD = 28 Volts, IDQ = 300 mA, Pout =
35.5 Watts CW, f = 960 MHz
Power Gain — 19 dB
Drain Efficiency — 57%
• Capable of Handling 5:1 VSWR, @ 32 Vdc, 940 MHz, 70 Watts CW Output
Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced
Ruggedness
• Typical Pout @ 1 dB Compression Point ] 45 Watts CW
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 285 mA,
Pout = 17.8 Watts Avg., Full Frequency Band (920 - 960 MHz)
Power Gain — 19 dB
Drain Efficiency — 42.5%
Spectral Regrowth @ 400 kHz Offset = - 62.5 dBc
Spectral Regrowth @ 600 kHz Offset = - 72 dBc
EVM — 2.1% rms
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
920 - 960 MHz, 35.5 W CW, 28 V
GSM, GSM EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRFE6S9046NR1
CASE 1487 - 05, STYLE 1
TO - 270 WB - 4 GULL
PLASTIC
MRFE6S9046GNR1
PARTS ARE SINGLE - ENDED
RFin/VGS
3
2 RFout/VDS
RFin/VGS
4
1 RFout/VDS
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +66
Vdc
Gate - Source Voltage
VGS
- 6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
TC
150
°C
TJ
225
°C
Case Operating Temperature
Operating Junction Temperature
(1,2)
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
© Freescale Semiconductor, Inc., 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFE6S9046NR1 MRFE6S9046GNR1
1
Table 2. Thermal Characteristics
Characteristic
Value (1,2)
Symbol
Thermal Resistance, Junction to Case
Case Temperature 80°C, 45 W CW, 28 Vdc, IDQ = 300 mA
Case Temperature 80°C, 18 W CW, 28 Vdc, IDQ = 300 mA
RθJC
Unit
°C/W
1.3
1.8
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 66 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 μAdc)
VGS(th)
1
2.2
3
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 300 mAdc, Measured in Functional Test)
VGS(Q)
2
3.1
4
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
0.1
0.3
0.4
Vdc
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
0.6
—
pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
318
—
pF
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
120
—
pF
Off Characteristics
On Characteristics
Dynamic Characteristics (3)
Functional Tests (4) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, Pout = 35.5 W CW, IDQ = 300 mA, f = 960 MHz
Characteristic
Symbol
Min
Typ
Max
Unit
Power Gain
Gps
17.5
19
—
dB
Drain Efficiency
ηD
54
57
—
%
Input Return Loss
IRL
—
- 13
-7
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
3. Part internally matched both on input and output.
4. Measurement made with device in straight lead configuration before any lead forming operation is applied.
(continued)
MRFE6S9046NR1 MRFE6S9046GNR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale GSM EDGE Reference Design Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 300 mA, 920-960 MHz
Bandwidth
Pout @ 1 dB Compression Point
P1dB
IMD Symmetry @ 44 W PEP, Pout where IMD Third Order
Intermodulation ` 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
—
45
—
W
MHz
—
55
—
VBWres
—
65
—
MHz
Gain Flatness in 40 MHz Bandwidth @ Pout = 35.5 W CW
GF
—
0.2
—
dB
Average Deviation from Linear Phase in 40 MHz Bandwidth
@ Pout = 45 W CW
Φ
—
0.9
—
°
Delay
—
3.1
—
ns
Part - to - Part Insertion Phase Variation @ Pout = 45 W CW,
f = 940 MHz, Six Sigma Window
ΔΦ
—
20
—
°
Gain Variation over Temperature
( - 30°C to +85°C)
ΔG
—
0.021
—
dB/°C
ΔP1dB
—
0.006
—
dBm/°C
Average Group Delay @ Pout = 45 W CW, f = 940 MHz
Output Power Variation over Temperature
( - 30°C to +85°C)
Typical GSM EDGE Performances (In Freescale GSM EDGE Reference Design Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 285 mA,
Pout = 17.8 W Avg., 920 - 960 MHz EDGE Modulation
Power Gain
Gps
—
19
—
dB
Drain Efficiency
ηD
—
42.5
—
%
Error Vector Magnitude
EVM
—
2.1
—
% rms
Spectral Regrowth at 400 kHz Offset
SR1
—
- 62.5
—
dBc
Spectral Regrowth at 600 kHz Offset
SR2
—
- 72
—
dBc
MRFE6S9046NR1 MRFE6S9046GNR1
RF Device Data
Freescale Semiconductor
3
VSUPPLY
Z7
R1
VBIAS
+
C10
C11
C12
C5
Z9
Z6
RF
INPUT
Z10
Z1
Z2
Z3
C4 Z4
Z11
Z12
C7
C13
0.200″
0.196″
0.380″
0.321″
0.039″
0.281″
0.892″
0.751″
x 0.044″
x 0.044″
x 0.044″
x 0.450″
x 0.450″
x 0.040″
x 0.051″
x 0.040″
Z14
Z15
C9
C8
DUT
C3
C2
Z13
Z5
Z8
C1
Z1
Z2
Z3
Z4
Z5
Z6*
Z7
Z8* Z9*
C6
RF
OUTPUT
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
PCB
C14
0.040″ x 0.450″ Microstrip
0.321″ x 0.450″ Microstrip
0.080″ x 0.280″ Microstrip
0.372″ x 0.044″ Microstrip
0.124″ x 0.044″ Microstrip
0.200″ x 0.044″ Microstrip
Rogers R04350, 0.020″, εr = 3.66
* Line length includes microstrip bends
Figure 2. MRFE6S9046NR1(GNR1) Test Circuit Schematic — GSM EDGE Reference Design
Table 6. MRFE6S9046NR1(GNR1) Test Circuit Component Designations and Values — GSM EDGE Reference Design
Part
Description
Part Number
Manufacturer
C1, C9
56 pF Chip Capacitors
ATC600F560BT500XT
ATC
C2
2.4 pF Chip Capacitor
ATC600F2R4BT500XT
ATC
C3, C4
6.8 pF Chip Capacitors
ATC600F6R8BT500XT
ATC
C5, C11, C14
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88B
Murata
C6, C7
3.3 pF Chip Capacitors
ATC600F3R3BT500XT
ATC
C8
4.7 pF Chip Capacitor
ATC600F4R7BT500XT
ATC
C10, C13
39 pF Chip Capacitors
ATC600F390BT500XT
ATC
C12
470 μF, 63 V Electrolytic Capacitor
MCGPR63V477M13X26 - RH
Multicomp
R1
4.7 KΩ, 1/4 W Chip Resistor
CRCW12064701FKEA
Vishay
MRFE6S9046NR1 MRFE6S9046GNR1
4
RF Device Data
Freescale Semiconductor
C12
VGS
C10
C5
R1
C1
C2
C4
C3
CUT OUT AREA
C11
C6
C8
C9
C7
TO270−WB 2 GHz
Rev. 3 − Output
C13
C14
VDS
TO270−WB 2 GHz
Rev. 3 − Input
Figure 3. MRFE6S9046NR1(GNR1) Test Circuit Component Layout — GSM EDGE Reference Design
MRFE6S9046NR1 MRFE6S9046GNR1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
19.6
58
ηD
56
Gps, POWER GAIN (dB)
19.4
Gps
19.3
55
54
19.2
VDD = 28 Vdc, Pout = 35.5 W CW, IDQ = 300 mA
19.1
53
19
52
18.9
51
IRL
18.8
50
925
930
935
940
945
950
955
−19
−22
−25
49
−28
48
960
−31
18.7
18.6
920
−16
IRL, INPUT RETURN LOSS (dB)
57
ηD, DRAIN EFFICIENCY (%)
19.5
f, FREQUENCY (MHz)
Figure 4. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ Pout = 35.5 Watts CW
Gps, POWER GAIN (dB)
19.3
19.2
40
Gps
39
19.1
38
VDD = 28 Vdc, Pout = 17.8 W (Avg.)
IDQ = 285 mA, EDGE Modulation
19
18.9
IRL
6
5
18.8
4
18.7
3
EVM
18.6
18.5
920
925
930
2
935
940
945
950
955
1
960
−15
−20
−25
−30
−35
−40
IRL, INPUT RETURN LOSS (dB)
41
ηD, DRAIN
EFFICIENCY (%)
42
ηD
19.4
EVM, ERROR VECTOR
MAGNITUDE (% rms)
19.5
f, FREQUENCY (MHz)
Figure 5. Power Gain, Input Return Loss, EVM and Drain
Efficiency versus Frequency @ Pout = 17.8 Watts Avg.
IDQ = 450 mA
IMD, INTERMODULATION DISTORTION (dBc)
21
375 mA
Gps, POWER GAIN (dB)
20
300 mA
19
225 mA
18
150 mA
17
16
VDD = 28 Vdc
f = 940 MHz
15
1
10
100
−10
VDD = 28 Vdc, Pout = 44 W (PEP), IDQ = 300 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 940 MHz
−20
IM3−U
−30
IM3−L
−40
IM5−L
IM5−U
−50
IM7−L
−60
IM7−U
−70
0.1
1
10
Pout, OUTPUT POWER (WATTS) CW
TWO−TONE SPACING (MHz)
Figure 6. Power Gain versus Output Power
Figure 7. Intermodulation Distortion Products
versus Two - Tone Spacing
100
MRFE6S9046NR1 MRFE6S9046GNR1
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Gps
60
25_C
TC = −30_C
20
45
25_C
30
18
85_C
VDD = 28 Vdc
IDQ = 300 mA
f = 940 MHz
16
ηD
15
14
6
EVM, ERROR VECTOR MAGNITUDE (% rms)
85_C
22
Gps, POWER GAIN (dB)
75
−30_C
ηD, DRAIN EFFICIENCY (%)
24
0
1
10
70
5 W Avg.
0
900
910
920
930
940
950
960
970
980
−50
SPECTRAL REGROWTH @ 600 kHz (dBc)
25_C
TC = 85_C
−55
−30_C
−60
−65
−70
VDD = 28 Vdc, IDQ = 285 mA
f = 940 MHz, EDGE Modulation
−55
25_C
−60
TC = 85_C
−65
−30_C
−70
−75
−80
−85
0
10
20
40
30
50
0
10
30
20
40
50
Pout, OUTPUT POWER (WATTS)
Pout, OUTPUT POWER (WATTS)
Figure 10. Spectral Regrowth at 400 kHz
versus Output Power
Figure 11. Spectral Regrowth at 600 kHz
versus Output Power
20
65
TC = −30_C
25_C
16
85_C
14
53
47
41
12
10
35
85_C
8
29
−30_C
6
23
17
ηD
EVM
5
10
TC = −30_C
21
25_C
20
19
85_C
18
VDD = 28 Vdc
Pout = 35 W CW
IDQ = 300 mA
17
11
0
1
22
59
ηD, DRAIN EFFICIENCY (%)
VDD = 28 Vdc, IDQ = 285 mA
f = 940 MHz, EDGE Modulation
Gps, POWER GAIN (dB)
SPECTRAL REGROWTH @ 400 kHz (dBc)
1
Figure 9. EVM versus Frequency
−75
EVM, ERROR VECTOR MAGNITUDE (% rms)
17.8 W Avg.
2
Figure 8. Power Gain and Drain Efficiency
versus Output Power
−50
2
3
f, FREQUENCY (MHz)
VDD = 28 Vdc, IDQ = 285 mA
f = 940 MHz, EDGE Modulation
−45
4
Pout = 26.5 W Avg.
4
Pout, OUTPUT POWER (WATTS) CW
−40
18
VDD = 28 Vdc
IDQ = 285 mA
EDGE Modulation
5
60
16
900
910
920
930
940
950
960
970
Pout, OUTPUT POWER (WATTS) AVG.
f, FREQUENCY (MHz)
Figure 12. EVM and Drain Efficiency
versus Output Power
Figure 13. Power Gain versus Frequency
980
MRFE6S9046NR1 MRFE6S9046GNR1
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
0
109
15
−6
108
10
−12
20
IRL (dB)
−18
5
IRL
0
−5
650
VDD = 28 Vdc
Pout = 9 dBm
IDQ = 300 mA
750
850
950
1050
1150
1250
1350
MTTF (HOURS)
GAIN (dB)
Gain
107
106
−24
105
−30
1450
104
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 35.5 W CW, and ηD = 57%.
f, FREQUENCY (MHz)
Figure 14. Broadband Frequency Response
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 15. MTTF versus Junction Temperature
GSM TEST SIGNAL
−10
Reference Power
−20
VWB = 30 kHz
Sweep Time = 70 ms
RBW = 30 kHz
−30
−40
(dB)
−50
−60
400 kHz
−70
−80
400 kHz
600 kHz
600 kHz
−90
−100
−110
Center 1.96 GHz
200 kHz
Span 2 MHz
Figure 16. EDGE Spectrum
MRFE6S9046NR1 MRFE6S9046GNR1
8
RF Device Data
Freescale Semiconductor
Zo = 10 Ω
f = 980 MHz
Zload
f = 820 MHz
f = 980 MHz
f = 820 MHz
Zsource
VDD = 28 Vdc, IDQ = 285 mA, Pout = 17.8 W Avg.
f
(MHz)
Zsource
W
Zload
W
820
5.03 - j7.29
7.68 - j3.45
840
4.46 - j6.69
6.97 - j3.53
860
4.00 - j6.11
6.42 - j3.20
880
3.62 - j5.64
5.98 - j2.87
900
3.29 - j5.18
5.65 - j2.52
920
3.03 - j4.75
5.40 - j2.17
940
2.80 - j4.36
5.21 - j1.82
960
2.61 - j3.99
5.09 - j1.47
980
2.46 - j3.64
5.03 - j1.12
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 17. Series Equivalent Source and Load Impedance — GSM EDGE Reference Design
MRFE6S9046NR1 MRFE6S9046GNR1
RF Device Data
Freescale Semiconductor
9
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
53
52
51
50
P1dB = 47.57 dBm (57 W)
49
48
Actual
47
46
45
VDD = 28 Vdc, IDQ = 300 mA, Pulsed CW
10 μsec(on), 10% Duty Cycle, f = 920 MHz
44
43
23
24
25
26
27
28
29
30
31
Ideal
51
Ideal
P3dB = 48.22 dBm (66 W)
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
52
32
P3dB = 47.89 dBm (62 W)
50
49
P1dB = 47.25 dBm (53 W)
48
Actual
47
46
45
44
VDD = 28 Vdc, IDQ = 300 mA, Pulsed CW
10 μsec(on), 10% Duty Cycle, f = 960 MHz
43
42
33
23
24
25
26
27
28
29
30
31
32
33
Pin, INPUT POWER (dBm)
Pin, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
Test Impedances per Compression Level
Test Impedances per Compression Level
P1dB
Zsource
Ω
Zload
Ω
7.83 - j2.01
1.25 - j0.52
Figure 18. Pulsed CW Output Power
versus Input Power @ 28 V @ 920 MHz
P1dB
Zsource
Ω
Zload
Ω
3.79 - j6.51
4.30 - j2.52
Figure 19. Pulsed CW Output Power
versus Input Power @ 28 V @ 960 MHz
MRFE6S9046NR1 MRFE6S9046GNR1
10
RF Device Data
Freescale Semiconductor
VSUPPLY
Z7
R1
VBIAS
+
C10
C11
C5
Z9
Z6
RF
INPUT
Z10
Z1
Z2
Z3
C4 Z4
Z11
Z12
C6
C7
Z15
C9
C8
DUT
C3
C2
Z14
Z5
Z8
C1
Z13
RF
OUTPUT
C12
Z1
Z2
Z3
Z4
Z5
Z6*
Z7
Z8*, Z9*
1.320″
0.020″
0.378″
0.321″
0.039″
0.306″
0.708″
0.738″
x 0.044″
x 0.044″
x 0.044″
x 0.450″
x 0.450″
x 0.040″
x 0.051″
x 0.040″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
PCB
0.040″ x 0.450″ Microstrip
0.321″ x 0.450″ Microstrip
0.080″ x 0.280″ Microstrip
0.371″ x 0.044″ Microstrip
0.124″ x 0.044″ Microstrip
1.332″ x 0.044″ Microstrip
Rogers R04350, 0.020″, εr = 3.66
* Line length includes microstrip bends
Figure 20. MRFE6S9046NR1(GNR1) Test Circuit Schematic — Production Test Fixture
Table 7. MRFE6S9046NR1(GNR1) Test Circuit Component Designations and Values — Production Test Fixture
Part
Description
Part Number
Manufacturer
C1, C9
56 pF Chip Capacitors
ATC600F560BT500XT
ATC
C2
3.9 pF Chip Capacitor
ATC600F2R4BT500XT
ATC
C3, C4
6.8 pF Chip Capacitors
ATC600F6R8BT500XT
ATC
C5
0.01 μF Chip Capacitor
C1825C103K1GAC
Kemet
C6, C7
3.3 pF Chip Capacitors
ATC600F3R3BT500XT
ATC
C8
5.1 pF Chip Capacitor
ATC600F4R7BT500XT
ATC
C10, C12
39 pF Chip Capacitors
ATC600F390BT500XT
ATC
C11
470 μF, 63 V Electrolytic Capacitor
MCGPR63V477M13X26 - RH
Multicomp
R1
4.7 KΩ, 1/4 W Chip Resistor
CRCW12064K70FKEA
Vishay
MRFE6S9046NR1 MRFE6S9046GNR1
RF Device Data
Freescale Semiconductor
11
VGS
C11
C10
VDS
C5
C1
C2
C4
C3
CUT OUT AREA
R1
C6
C7
C8
C9
C12
VDS
MRFE6S8046GN/MRFE6S9046GN
Rev. 0
Figure 21. MRFE6S9046NR1(GNR1) Test Circuit Component Layout — Production Test Fixture
MRFE6S9046NR1 MRFE6S9046GNR1
12
RF Device Data
Freescale Semiconductor
Zo = 10 Ω
f = 980 MHz
Zload
f = 820 MHz
f = 980 MHz
Zsource
f = 820 MHz
VDD = 28 Vdc, IDQ = 300 mA, Pout = 35.5 W CW
f
(MHz)
Zsource
W
Zload
W
820
4.37 - j6.23
6.55 - j3.27
840
3.95 - j5.76
6.26 - j2.98
860
3.60 - j5.53
6.02 - j2.72
880
3.29 - j4.95
5.86 - j2.48
900
3.04 - j4.59
5.74 - j2.24
920
2.83 - j4.24
5.68 - j1.98
940
2.63 - j3.92
5.64 - j1.74
960
2.45 - j3.62
5.65 - j1.49
980
2.31 - j3.33
5.70 - j1.26
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 22. Series Equivalent Source and Load Impedance — Production Test Fixture
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PACKAGE DIMENSIONS
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PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
May 2009
Description
• Initial Release of Data Sheet
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