Document Number: MHT1001H Rev. 0, 5/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET MHT1001HR5 RF power transistor suitable for industrial heating applications operating at 2450 MHz. Device is capable of both CW and pulse operation. Typical CW Performance at 2450 MHz, VDD = 28 Vdc, IDQ = 1900 mA, Pout = 190 W Power Gain — 13.2 dB Drain Efficiency — 46.2% Capable of Handling 10:1 VSWR, @ 28 Vdc, 2340 MHz, 190 W CW Output Power Features 2450 MHz, 190 W CW, 28 V INDUSTRIAL HEATING, RUGGED RF POWER LDMOS TRANSISTOR Characterized with Series Equivalent Large--Signal Impedance Parameters Internally Matched for Ease of Use Qualified Up to a Maximum of 32 VDD Operation Integrated ESD Protection In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel. NI--1230H--4S Gate A 3 1 Drain A Gate B 4 2 Drain B (Top View) Note: The backside of the package is the source terminal for the transistors. Figure 1. Pin Connections Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +68 Vdc Gate--Source Voltage VGS --0.5, +12 Vdc Storage Temperature Range Tstg -- 65 to +150 C TC 150 C Case Operating Temperature Operating Junction Temperature (1,2) CW Operation @ TC = 25C Derate above 25C TJ 225 C CW 110 1.34 W W/C Symbol Value (2,3) Unit RJC 0.22 C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 100C, 190 W CW (4) 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. Freescale Semiconductor, Inc., 2014. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MHT1001HR5 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1C Machine Model (per EIA/JESD22--A115) A Charge Device Model (per JESD22--C101) III Table 4. Electrical Characteristics (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 Adc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 Adc Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 200 Adc) VGS(th) 1 2 3 Vdc Gate Quiescent Voltage (3) (VDD = 28 Vdc, ID = 1900 mAdc, Measured in Functional Test) VGS(Q) 2 2.8 4 Vdc Drain--Source On--Voltage (1) (VGS = 10 Vdc, ID = 2.2 Adc) VDS(on) 0.1 0.21 0.3 Vdc Crss — 1.5 — pF Characteristic Off Characteristics (1) On Characteristics Dynamic Characteristics (1,2) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1900 mA, Pout = 40 W Avg., f = 2390 MHz, 2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ 10 MHz Offset. Input Signal PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Gps 13 14 16 dB Drain Efficiency D 22 23.5 — % Intermodulation Distortion IM3 — --37.5 --35 dBc ACPR — --41 --38 dBc IRL — --13 — dB Adjacent Channel Power Ratio Input Return Loss 1. Each side of device measured separately. 2. Part internally matched both on input and output. 3. Measurement made with device in push--pull configuration. MHT1001HR5 2 RF Device Data Freescale Semiconductor, Inc. VSUPPLY + R1 VBIAS Z2 C17 C18 C19 C20 C21 C27 Z28 + + C12 C11 C9 C5 B2 Z4 RF INPUT Z1 C7 B1 C10 Z6 Z16 Z14 Z8 Z10 Z18 Z20 Z22 C3 Z12 C1 Z3 Z24 Z25 RF OUTPUT Z27 Z26 DUT Z5 Z7 Z9 Z11 Z13 C2 Z17 Z19 Z21 Z23 Z15 C4 R2 VBIAS C14 + + C16 C15 C13 B3 B4 Z29 C6 + C8 Z1 Z2 Z3 Z4 Z5 Z6, Z7 Z8, Z9 Z10, Z11 Z12, Z13 Z14 Z15 Z16, Z17 Z18, Z19 Z20, Z21 Z22 Z23 Z24 Z25 Z26 Z27 Z28, Z29 PCB 0.340 x 0.081 Microstrip 0.080 x 0.526 Microstrip 0.895 x 0.135 Microstrip 1.736 x 0.074 Microstrip 0.151 x 0.074 Microstrip 0.505 x 0.081 Microstrip 0.570 x 0.282 Microstrip 0.072 x 0.500 Microstrip 0.078 x 0.500 Microstrip 0.664 x 0.050 Microstrip 0.680 x 0.050 Microstrip C22 C23 C24 C25 C26 VSUPPLY C28 0.189 x 0.782 Microstrip 0.321 x 0.782 Microstrip 0.630 x 0.081 Microstrip 0.150 x 0.081 Microstrip 1.728 x 0.085 Microstrip 0.122 x 0.135 Microstrip 0.250 x 0.300 Microstrip 0.563 x 0.135 Microstrip 0.380 x 0.081 Microstrip 0.305 x 0.057 Microstrip Arlon CuClad 250GX--0300--55--22, 0.030, r = 2.55 Figure 1. MHT1001HR5 Test Circuit Schematic — 2450 MHz Table 5. MHT1001HR5 Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1, B2, B3, B4 Ferrite Beads 2508051107Y0 Fair--Rite C1, C2, C3, C4 5.1 pF, Chip Capacitors ATC100B5R1CT500XT ATC C5, C6, C7, C8 5.6 pF, Chip Capacitors ATC100B5R6CT500XT ATC C9, C13 0.01 F, 100 V Chip Capacitors C1825C103J1RAC Kemet C10, C14, C17, C22 2.2 F, 50 V Chip Capacitors C1825C225J5RAC Kemet C11, C15 22 F, 25 V Tantalum Capacitors T491D226K025AT Kemet C12, C16 47 F, 16 V Tantalum Capacitors T491D476K016AT Kemet C18, C19, C20, C21, C23, C24, C25, C26 10 F, 50 V Chip Capacitors GRM55DR61H106KA88B Murata C27, C28 330 F, 63 V Electrolytic Capacitors NACZF331M63V Nippon R1, R2 240 , 1/4 W Chip Resistors CRCW12062400FKEA Vishay MHT1001HR5 RF Device Data Freescale Semiconductor, Inc. 3 C12 C11 + C10* C9* + C20 C21 B1 B2 + R1 C27 C5 C17 C18 C19 C7 C3 C1 C2 B3 C6 CUT OUT AREA C4 C8 B4 C22 C23 C24 + + R2 C16 C15 C14* C13* + C28 C25 C26 *Stacked Figure 2. MHT1001HR5 Test Circuit Component Layout MHT1001HR5 4 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS — 2450 MHz IDQ = 1900 mA f = 2450 MHz 13 45 14 40 13.5 35 30 12.5 12 11.5 D 11 32 V 25 32 V VDD = 12 V 30 V 28 V 10.5 10 20 30 V 1900 mA 1600 mA 1500 mA 13 2200 mA 12.5 12 11.5 VDD = 28 V f = 2450 MHz 11 15 10.5 10 10 500 100 2100 mA Gps 100 300 Pout, OUTPUT POWER (WATTS) CW Pout, OUTPUT POWER (WATTS) CW Figure 3. Power Gain and Drain Efficiency versus CW Output Power Figure 4. Power Gain and Drain Efficiency versus CW Output Power 14.5 50 Gps Gps, POWER GAIN (dB) 14 45 13.5 40 13 35 12.5 30 12 25 VDD = 28 V IDQ = 1900 mA f = 2450 MHz 11.5 11 D 20 D, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 13.5 14.5 Gps, POWER GAIN (dB) Gps 14 50 D, DRAIN EFFICIENCY (%) 14.5 15 10.5 10 100 10 Pout, OUTPUT POWER (WATTS) CW Figure 5. Power Gain and Drain Efficiency versus CW Output Power 108 MTTF (HOURS) 107 106 105 104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 190 W CW, and D = 46.2%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 6. MTTF versus Junction Temperature MHT1001HR5 RF Device Data Freescale Semiconductor, Inc. 5 Zo = 25 Zload Zsource f = 2450 MHz f = 2450 MHz VDD = 28 Vdc, IDQ = 1900 mA, Pout = 190 W CW f MHz Zsource Zload 2450 12.72 -- j8.48 2.75 -- j4.85 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network + Device Under Test -- -Z source Output Matching Network + Z load Figure 7. Series Equivalent Source and Load Impedance MHT1001HR5 6 RF Device Data Freescale Semiconductor, Inc. PACKAGE DIMENSIONS MHT1001HR5 RF Device Data Freescale Semiconductor, Inc. 7 MHT1001HR5 8 RF Device Data Freescale Semiconductor, Inc. PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following resources to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 May 2014 Description Initial Release of Data Sheet MHT1001HR5 RF Device Data Freescale Semiconductor, Inc. 9 How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. 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U.S. Pat. & Tm. Off. All other product or service names are the property of their respective owners. E 2014 Freescale Semiconductor, Inc. MHT1001HR5 Document Number: MHT1001H Rev. 10 0, 5/2014 RF Device Data Freescale Semiconductor, Inc.