Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MRF7P20040H
Rev. 2, 12/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
MRF7P20040HR3
MRF7P20040HSR3
Designed for CDMA base station applications with frequencies from 1800 to
2200 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
• Typical Doherty Single--Carrier W--CDMA Performance: VDD = 32 Volts,
IDQA = 150 mA, VGSB = 1.5 Vdc, Pout = 10 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @
0.01% Probability
on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2025 MHz
18.2
42.6
7.3
--34.8
2010--2025 MHz, 10 W AVG., 32 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
• Capable of Handling 5:1 VSWR, @ 32 Vdc, 2017.5 MHz, 50 Watts CW (1)
Output Power (3 dB Input Overdrive from Rated Pout)
• Typical Pout @ 3 dB Compression Point ≃ 50 Watts CW (1)
Features
• Production Tested in a Symmetrical Doherty Configuration
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• Designed for Digital Predistortion Error Correction Systems
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel option, see p. 15.
CASE 465M--01, STYLE 1
NI--780--4
MRF7P20040HR3
CASE 465H--02, STYLE 1
NI--780S--4
MRF7P20040HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (2,3)
TJ
225
°C
CW
42.4
0.17
W
W/°C
CW Operation @ TC = 25°C
Derate above 25°C
RFinA/VGSA 3
1 RFoutA/VDSA
RFinB/VGSB 4
2 RFoutB/VDSB
(Top View)
Figure 1. Pin Connections
Table 2. Thermal Characteristics
Characteristic
Symbol
Thermal Resistance, Junction to Case
Case Temperature 78°C, 10 W CW, 32 Vdc, IDQA = 150 mA, VGSB = 1.5 Vdc, 2017.5 MHz
Case Temperature 82°C, 40 W CW(1), 32 Vdc, IDQA = 150 mA, VGSB = 1.5 Vdc, 2017.5 MHz
RθJC
Value (3,4)
2.11
1.50
Unit
°C/W
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2009--2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF7P20040HR3 MRF7P20040HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1A (Minimum)
Machine Model (per EIA/JESD22--A115)
B (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 32 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 33.5 μAdc)
VGS(th)
1.2
2
2.7
Vdc
Gate Quiescent Voltage
(VDD = 32 Vdc, IDA = 150 mAdc, Measured in Functional Test)
VGS(Q)
2
2.7
3.5
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 0.325 Adc)
VDS(on)
0.1
0.24
0.3
Vdc
Characteristic
Off Characteristics
(1)
On Characteristics (1)
Functional Tests (2,3) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 32 Vdc, IDQA = 150 mA, VGSB = 1.5 Vdc, Pout = 10 W Avg.,
f = 2025 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured
in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
16
18.2
21
dB
Drain Efficiency
ηD
39
42.6
—
%
PAR
6.9
7.3
—
dB
ACPR
—
--34.8
--30
dBc
IRL
—
--17.8
--10
dB
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
Typical Performance (3) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 32 Vdc, IDQA = 150 mA, VGSB = 1.5 Vdc,
2010--2025 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
35
—
W
Pout @ 3 dB Compression Point, CW (4)
P3dB
—
50
—
W
—
8
—
IMD Symmetry @ 15 W PEP, Pout where IMD Third Order
Intermodulation  30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
70
—
MHz
Gain Flatness in 15 MHz Bandwidth @ Pout = 10 W Avg.
GF
—
0.04
—
dB
Gain Variation over Temperature
(--30°C to +85°C)
∆G
—
0.013
—
dB/°C
∆P1dB
—
0.006
—
dB/°C
Output Power Variation over Temperature
(--30°C to +85°C) (4)
1.
2.
3.
4.
MHz
Each side of device measured separately.
Part internally matched both on input and output.
Measurement made with device in a Symmetrical Doherty configuration.
Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
MRF7P20040HR3 MRF7P20040HSR3
2
RF Device Data
Freescale Semiconductor
VGGA
VDSA
C13
C11
R2
C15
C17
C7
C5
C1 C3
C2 C4
C6
CUT OUT AREA
R1
C
C9
P
C10
C8
C12
C14
C19
C16
C18
R3
MRF7P20040H/HS
Rev. 1
VDSB
VGGB
Figure 2. MRF7P20040HR3(HSR3) Test Circuit Component Layout
Table 5. MRF7P20040HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2, C9, C10
12 pF Chip Capacitors
ATC600F120FT250XT
ATC
C3, C4
2.4 pF Chip Capacitors
ATC600F2R4AT250XT
ATC
C5, C6
27 pF Chip Capacitors
ATC600F270FT250XT
ATC
C7, C8
1.1 pF Chip Capacitors
ATC600F1R1AT250XT
ATC
C11, C12
12 pF Chip Capacitors
ATC100B120FT1500XT
ATC
C13, C14
2.2 μF, 50 V Chip Capacitors
C3225X7R1H225KT
TDK
C15, C16
4.7 μF, 50 V Chip Capacitors
GRM43ER61H475MA88L
Murata
C17, C18
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C19
0.8 pF Chip Capacitor
ATC600F0R8AT250XT
ATC
R1
100 Ω, 1/4 W Chip Resistor
CRCW12061000FKEA
Vishay
R2, R3
12 Ω, 1/4 W Chip Resistors
CRCW120612R0FKEA
Vishay
PCB
0.020″, εr = 3.5
RO4350B
Rogers
MRF7P20040HR3 MRF7P20040HSR3
RF Device Data
Freescale Semiconductor
3
Single--ended
λ
4
λ
Quadrature combined
4
λ
4
λ
λ
2
2
Doherty
Push--pull
Figure 3. Possible Circuit Topologies
MRF7P20040HR3 MRF7P20040HSR3
4
RF Device Data
Freescale Semiconductor
17
42
40
ηD
16.5
44
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF
16 ACPR
15.5
15
14
13.5
1880
1920
--14
--30
--16
--34
--36
IRL
1900
--28
--32
PARC
14.5
38
1940
1960
1980
2000
2020
--38
2040
--18
--20
--22
--24
--1.8
--2
--2.2
--2.4
--2.6
PARC (dB)
Gps, POWER GAIN (dB)
17.5
Gps
IRL, INPUT RETURN LOSS (dB)
46
VDD = 32 Vdc, Pout = 10 W (Avg.)
IDQA = 150 mA, VGSB = 1.5 Vdc
18
ACPR (dBc)
18.5
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
--2.8
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 4. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 10 Watts Avg.
--10
VDD = 32 Vdc, Pout = 15 W (PEP), IDQA = 150 mA
VGSB = 1.5 Vdc, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2017.5 MHz
--20
IM3--L
--30
IM3--U
--40
IM5--U
IM5--L
--50
IM7--U
--60
IM7--L
1
10
100
TWO--TONE SPACING (MHz)
Figure 5. Intermodulation Distortion Products
versus Two--Tone Spacing
17
16.5
16
15.5
ηD
Gps
0
--2 dB = 7.64 W
--1
--1 dB = 5.48 W
--5
--3 dB = 10.07 W
--28
32
VDD = 32 Vdc, IDQA = 150 mA
PARC
VGSB = 1.5 Vdc, f = 2017.5 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
3
44
36
--3
--4
--26
40
ACPR
--2
48
6
9
12
--30
--32
ACPR (dBc)
17.5
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
18
1
ηD, DRAIN EFFICIENCY (%)
18.5
--34
28
--36
24
--38
15
Pout, OUTPUT POWER (WATTS)
Figure 6. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
MRF7P20040HR3 MRF7P20040HSR3
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
18.5
2017.5 MHz
2010 MHz
2017.5 MHz
Gps, POWER GAIN (dB)
18
17.5 VDD = 32 Vdc, IDQA = 150 mA
VGSB = 1.5 Vdc, Single--Carrier
17 W--CDMA, 3.84 MHz Channel
16.5 Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01%
16 Probability on CCDF
15.5
15
2025 MHz
--5
50
--10
40
ηD
35
2025 MHz
30
Gps
25
20
14
10
1
0
55
45
2017.5 MHz
2010 MHz
ACPR
14.5
60
--15
--20
--25
--30
ACPR (dBc)
f = 2010 MHz 2025 MHz
ηD, DRAIN EFFICIENCY (%)
19
--35
--40
15
--45
10
--50
50
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
--4
20
--10
Gain
12
--16
8
--22
4
0
--4
1450
1575
1700
1825
--28
IRL
VDD = 32 Vdc
Pin = 0 dBm
IDQA = 150 mA
VGSB = 1.5 Vdc
IRL (dB)
GAIN (dB)
16
--34
1950
2075
2200
2325
--40
2450
f, FREQUENCY (MHz)
Figure 8. Broadband Frequency Response
MRF7P20040HR3 MRF7P20040HSR3
6
RF Device Data
Freescale Semiconductor
W--CDMA TEST SIGNAL
100
10
0
--10
Input Signal
--30
0.1
0.01
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
0.001
0.0001
3.84 MHz
Channel BW
--20
1
(dB)
PROBABILITY (%)
10
0
2
4
6
--40
--50
--60
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
--70
--80
8
10
PEAK--TO--AVERAGE (dB)
Figure 9. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
12
--90
--100
--9
--7.2 --5.4
--3.6 --1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 10. Single--Carrier W--CDMA Spectrum
MRF7P20040HR3 MRF7P20040HSR3
RF Device Data
Freescale Semiconductor
7
VDD = 32 Vdc, IDQA = 150 mA, VGSB = 1.5 Vdc, Pout = 10 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
1995
6.80 -- j13.11
14.67 + j4.09
2000
6.66 -- j13.03
14.87+ j3.82
2005
6.52 -- j12.93
15.08 + j3.58
2010
6.37 -- j12.85
15.27 + j3.29
2015
6.22 -- j12.78
15.45 + j3.00
2020
6.08 -- j12.69
15.62 + j2.77
2025
5.94 -- j12.60
15.80 + j2.44
2030
5.80 -- j12.49
15.95 + j2.14
2035
5.65 -- j12.40
16.08 + j1.82
Note: Measured with Peaking side open.
Zload
= Test circuit impedance as measured from
drain to ground.
Zsource = Test circuit impedance as measured from
gate to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 11. Series Equivalent Source and Load Impedance — Carrier Side
VDD = 32 Vdc, IDQA = 150 mA, VGSB = 1.5 Vdc, Pout = 10 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
1995
8.45 -- j12.85
5.83 -- j10.09
2000
8.28 -- j12.79
5.57 -- j10.11
2005
8.11 -- j12.70
5.32 -- j10.08
2010
7.95 -- j12.63
5.06 -- j10.07
2015
7.79 -- j12.56
4.80 -- j10.06
2020
7.63 -- j12.48
4.55 -- j10.01
2025
7.50 -- j12.40
4.32 -- j9.96
2030
7.34 -- j12.32
4.06 -- j9.88
2035
7.19 -- j12.24
3.82 -- j9.81
Note: Measured with Carrier side open.
Zload
= Test circuit impedance as measured from
drain to ground.
Zsource = Test circuit impedance as measured from
gate to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 12. Series Equivalent Source and Load Impedance — Peaking Side
MRF7P20040HR3 MRF7P20040HSR3
8
RF Device Data
Freescale Semiconductor
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 32 Vdc, IDQA = 150 mA, Pulsed CW 10 μsec(on), 10% Duty Cycle
49
Pout, OUTPUT POWER (dBm)
48
Ideal
f = 2010 MHz
47
46
f = 2010 MHz
45
Actual
44
f = 2025 MHz
43
42
41
f = 2025 MHz
40
39
17
18
19
21
20
22
23
24
26
25
27
Pin, INPUT POWER (dBm)
Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 32 V
P1dB
P3dB
f
(MHz)
Watts
dBm
Watts
dBm
2010
26
44.1
31
44.9
2025
26
44.2
31
44.9
Test Impedances per Compression Level
f
(MHz)
Zsource
Ω
Zload
Ω
2010
P1dB
2.49 -- j18.56
15.82 -- j0.28
2025
P1dB
2.66 -- j19.78
15.78 + j0.52
Figure 13. Pulsed CW Output Power
versus Input Power @ 32 V
NOTE: Measurement made on the Class AB, carrier side of the device.
MRF7P20040HR3 MRF7P20040HSR3
RF Device Data
Freescale Semiconductor
9
VDD = 28 Vdc, IDQA = 150 mA
Watts
1805
35
VDD = 28 Vdc, IDQA = 150 mA
dBm
Zsource
Ω
Zload
Ω
f
MHz
Max Eff. (1)
%
45.4
2.2 -- j9.3
17.1 -- j7.9
1805
Max Pout
f
MHz
(1)
Zsource
Ω
Zload
Ω
66.6
2.2 -- j9.3
17.6 + j9.5
70.1
2.3 -- j11.3
16.1 + j9.8
1880
35
45.5
2.3 -- j11.3
14.0 -- j4.2
1880
1930
35
45.5
2.4 -- j13.0
14.7 -- j5.9
1930
69.8
2.4 -- j13.0
14.2 + j8.9
2025
67.7
3.5 -- j17.3
13.8 + j6.2
2025
35
45.5
3.5 -- j17.3
15.5 -- j8.0
2110
34
45.3
3.8 -- j20.6
15.4 -- j9.3
2110
67.9
3.8 -- j20.6
11.5 + j3.9
14.4 -- j9.4
2200
70.3
5.6 -- j25.8
9.6 -- j0.6
2200
35
45.5
5.6 -- j25.8
(1) Maximum output power measurement reflects pulsed 3 dB gain
compression.
Zsource = Test circuit impedance as measured from gate contact to
ground.
Zload = Test circuit impedance as measured from drain contact to
ground.
Input
Load Pull
Tuner
Output
Load Pull
Tuner
Device
Under
Test
Z
source
Z
load
Figure 14. Carrier Side Load Pull Performance —
Maximum P3dB Tuning
(1) Maximum efficiency measurement reflects pulsed 3 dB gain
compression.
Zsource = Test circuit impedance as measured from gate contact to
ground.
Zload = Test circuit impedance as measured from drain contact to
ground.
Input
Load Pull
Tuner
Output
Load Pull
Tuner
Device
Under
Test
Z
source
Z
load
Figure 15. Carrier Side Load Pull Performance —
Maximum Efficiency Tuning
MRF7P20040HR3 MRF7P20040HSR3
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
MRF7P20040HR3 MRF7P20040HSR3
RF Device Data
Freescale Semiconductor
11
MRF7P20040HR3 MRF7P20040HSR3
12
RF Device Data
Freescale Semiconductor
MRF7P20040HR3 MRF7P20040HSR3
RF Device Data
Freescale Semiconductor
13
MRF7P20040HR3 MRF7P20040HSR3
14
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents, tools and software to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
R5 TAPE AND REEL OPTION
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
The R5 tape and reel option for MRF7P20040H and MRF7P20040HS parts will be available for 2 years after release of
MRF7P20040H and MRF7P20040HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be
delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5
tape and reel option will be offered MRF7P20040H and MRF7P20040HS in the R3 tape and reel option.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
June 2009
• Initial Release of Data Sheet
1
Aug. 2009
• Removed IQ Magnitude Clipping from Typical Performance bullet, p. 1 and Functional Test header, p. 2
• Electrical Characteristics, DC tests: updated footnote to indicate each side of device measured
separately, p. 2
2
Dec. 2010
• Updated frequency in overview paragraph from “2010 to 2025 MHz” to “1800 to 2200 MHz” per expanded
load pull characterization shown in Fig. 14, Carrier Side Load Pull Performance — Maximum P3dB
Tuning and Fig. 15, Carrier Side Load Pull Performance — Maximum Efficiency Tuning, p. 1
• Added CW Operation information to Maximum Ratings table, p. 1
• In Table 2, Thermal Characteristics, Pout = 10 W CW thermal resistance values changed from
IDQA 2.5/VGSB 2.9 to 2.11_C/W and Pout = 40 W CW thermal resistance value changed from 2.3 to
1.50_C/W. Thermal values now reflect the use of the combined dissipated power from the carrier
amplifier and peaking amplifier, p. 1
• Added Fig. 14, Carrier Side Load Pull Performance — Maximum P3dB Tuning and Fig. 15, Carrier Side
Load Pull Performance — Maximum Efficiency Tuning to show load pull data for expanded frequency range
presented in p. 1 overview paragraph, p. 10
MRF7P20040HR3 MRF7P20040HSR3
RF Device Data
Freescale Semiconductor
15
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MRF7P20040HR3 MRF7P20040HSR3
Document Number: MRF7P20040H
Rev. 2, 12/2010
16
RF Device Data
Freescale Semiconductor