Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MRF8P23080H
Rev. 1, 11/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA and LTE base station applications with frequencies
from 2300 to 2620 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
• Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts,
IDQA = 280 mA, VGSB = 0.7 Vdc, Pout = 16 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2300 MHz
14.6
42.0
6.7
--29.5
2350 MHz
14.7
41.6
6.8
--31.5
2400 MHz
14.6
41.4
6.6
--32.5
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2350 MHz, 90 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout)
• Typical Pout @ 3 dB Compression Point ≃ 100 Watts CW
Features
• Production Tested in a Symmetrical Doherty Configuration
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Large--Signal Load--Pull Parameters and Common
Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• Designed for Digital Predistortion Error Correction Systems
• RoHS Compliant
• NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width,
13 inch Reel.
• NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width,
13 inch Reel.
MRF8P23080HR3
MRF8P23080HSR3
2300--2400 MHz, 16 W AVG., 28 V
W--CDMA, LTE
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465M--01, STYLE 1
NI--780--4
MRF8P23080HR3
CASE 465H--02, STYLE 1
NI--780S--4
MRF8P23080HSR3
RFinA/VGSA 3
1 RFoutA/VDSA
RFinB/VGSB 4
2 RFoutB/VDSB
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
TC
150
°C
TJ
225
°C
CW
168
2.39
W
W/°C
Case Operating Temperature
Operating Junction Temperature
(1,2)
CW Operation @ TC = 25°C
Derate above 25°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
© Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF8P23080HR3 MRF8P23080HSR3
1
Table 2. Thermal Characteristics
Characteristic
Value (1,2)
Symbol
Thermal Resistance, Junction to Case
Case Temperature 72°C, 16 W CW, 28 Vdc, IDQA = 280 mA, VGSB = 0.7 V, 2300 MHz
Case Temperature 80°C, 80 W CW(3), 28 Vdc, IDQA = 280 mA, VGSB = 0.7 V, 2300 MHz
RθJC
0.89
0.55
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 75 μAdc)
VGS(th)
1.0
1.8
2.5
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, IDA = 280 mAdc, Measured in Functional Test)
VGS(Q)
1.9
2.6
3.4
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 0.75 Adc)
VDS(on)
0.1
0.23
0.3
Vdc
Characteristic
Off Characteristics
(4)
On Characteristics (4)
Functional Tests (5,6) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 280 mA, VGSB = 0.7 Vdc, Pout = 16 W Avg.,
f = 2300 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured
on 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
13.5
14.6
18.5
dB
Drain Efficiency
ηD
38.0
42.0
—
%
PAR
6.0
6.7
—
dB
ACPR
—
--29.5
--27.0
dBc
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
(6) (In
Typical Broadband Performance
Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 280 mA, VGSB = 0.7 Vdc,
Pout = 16 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR
measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2300 MHz
14.6
42.0
6.7
--29.5
2350 MHz
14.7
41.6
6.8
--31.5
2400 MHz
14.6
41.4
6.6
--32.5
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
3. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
4. Each side of device measured separately.
5. Part internally matched both on input and output.
6. Measurement made with device in a Symmetrical Doherty configuration
(continued)
MRF8P23080HR3 MRF8P23080HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (1) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 280 mA, VGSB = 0.7 Vdc,
2300--2400 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
55
—
W
Pout @ 3 dB Compression Point, CW
P3dB
—
100
—
W
—
30
—
IMD Symmetry @ 20 W PEP, Pout where IMD Third Order
Intermodulation  30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
55
—
MHz
Gain Flatness in 100 MHz Bandwidth @ Pout = 16 W Avg.
GF
—
0.1
—
dB
Gain Variation over Temperature
(--30°C to +85°C)
∆G
—
0.013
—
dB/°C
∆P1dB
—
0.005
—
dB/°C
Output Power Variation over Temperature
(--30°C to +85°C) (2)
MHz
1. Measurement made with device in a Symmetrical Doherty configuration.
2. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
MRF8P23080HR3 MRF8P23080HSR3
RF Device Data
Freescale Semiconductor
3
C6
C18
C5
C15
VDA
C17
C
VGA
C16
C2
C3
Z1
C9
R1
MRF8P23080H
Rev. 1
C1
C7
C8
CUT OUT AREA
C4
C13
C14
C20
C19
C10
VGB
C22
P
C12 C11
C23
C21
VDB
C24
Figure 2. MRF8P23080HR3(HSR3) Test Circuit Component Layout
Table 5. MRF8P23080HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C7
0.8 pF Chip Capacitors
ATC600F0R8JT250XT
ATC
C2, C8, C13, C19
1.0 pF Chip Capacitors
ATC600F1R0JT250XT
ATC
C3, C9
18 pF Chip Capacitors
ATC600F180JT250XT
ATC
C4, C5, C10, C11
8.2 pF Chip Capacitors
ATC600F8R2JT250XT
ATC
C6, C12, C16, C22
1.0 μF, 50 V Chip Capacitors
GRM21BR71H105KA12L
Murata
C14, C20
10 pF Chip Capacitors
ATC600F100JT250XT
ATC
C15, C21
5.6 pF Chip Capacitors
ATC600F5R6JT250XT
ATC
C17, C23
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C18, C24
470 μF, 63 V Electrolytic Capacitors
MCGPR63V477M13X26--RH
Multicomp
R1
50 Ω, 1/4 W Chip Resistor
CRCW120650R0FKEA
Vishay
Z1
2500 MHz Band 90°, 3 dB Chip Hybrid Coupler
GSC356--HYB2500
Soshin
PCB
0.020″, εr = 3.5
RO4350B
Rogers
MRF8P23080HR3 MRF8P23080HSR3
4
RF Device Data
Freescale Semiconductor
Single--ended
λ
4
λ
Quadrature combined
4
λ
4
λ
λ
2
2
Doherty
Push--pull
Figure 3. Possible Circuit Topologies
MRF8P23080HR3 MRF8P23080HSR3
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
43
42
41
14.7
Gps
14.6
40
14.5
3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
14.4
14.3
0
--28
--0.5
--30
PARC
ACPR
14.2
--26
--32
--34
14.1
14
2290
2305
2320
2335
2350
2365
2380
2395
--36
2410
--1
--1.5
--2
PARC (dB)
Gps, POWER GAIN (dB)
ηD, DRAIN
EFFICIENCY (%)
ηD
14.8
44
VDD = 28 Vdc, Pout = 16 W (Avg.), IDQA = 280 mA
VGSB = 0.7 Vdc, Single--Carrier W--CDMA
ACPR (dBc)
15
14.9
--2.5
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 4. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 16 Watts Avg.
--20
VDD = 28 Vdc, Pout = 20 W (PEP)
IDQA = 280 mA, VGSB = 0.7 Vdc
--30
IM3--U
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2350 MHz
--40
IM3--L
IM5--U
IM5--L
--50
IM7--U
--60
--70
IM7--L
1
10
100
TWO--TONE SPACING (MHz)
16
0
15
14
13
12
11
VDD = 28 Vdc, IDQA = 280 mA, VGSB = 0.7 Vdc, f = 2350 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, Input
Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
ηD
--1
--2
--5
Gps
PARC
10
20
--24
40
--3 dB = 37.5 W
--4
55
45
--2 dB = 27.5 W
--3
--22
50
ACPR
--1 dB = 18.6 W
60
30
40
50
--26
--28
ACPR (dBc)
1
ηD, DRAIN EFFICIENCY (%)
17
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 5. Intermodulation Distortion Products
versus Two--Tone Spacing
--30
35
--32
30
--34
60
Pout, OUTPUT POWER (WATTS)
Figure 6. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
MRF8P23080HR3 MRF8P23080HSR3
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Gps, POWER GAIN (dB)
ηD
2400 MHz
14
2350 MHz
13
2300 MHz
ACPR
2300 MHz
12
60
0
50
--10
40
30
2350 MHz
2400 MHz
11
20
VDD = 28 Vdc, IDQA = 280 mA, VGSB = 0.7 Vdc
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
10
9
1
10
10
0
100
--20
--30
--40
ACPR (dBc)
Gps
ηD, DRAIN EFFICIENCY (%)
15
--50
--60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
18
15
Gain
GAIN (dB)
12
9
6
VDD = 28 Vdc
Pin = 0 dBm
IDQA = 280 mA
VGSB = 0.7 Vdc
3
0
2050
2125
2200
2275
2350
2425
2500
2575
2650
f, FREQUENCY (MHz)
Figure 8. Broadband Frequency Response
W--CDMA TEST SIGNAL
100
10
0
--10
Input Signal
--30
0.1
0.01
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0.001
0.0001
3.84 MHz
Channel BW
--20
1
(dB)
PROBABILITY (%)
10
0
1
2
3
4
5
6
--40
--50
--60
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
--70
--80
7
8
9
PEAK--TO--AVERAGE (dB)
Figure 9. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
--90
--100
--9
--7.2 --5.4
--3.6 --1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 10. Single--Carrier W--CDMA Spectrum
MRF8P23080HR3 MRF8P23080HSR3
RF Device Data
Freescale Semiconductor
7
VDD = 28 Vdc, IDQA = 280 mA
Max Pout (1)
f
MHz
Watts
dBm
Zsource
Ω
Zload
Ω
2300
58
47.6
8.42 -- j14.3
3.51 -- j5.02
2350
55
47.4
11.4 -- j13.4
3.75 -- j5.03
2400
55
47.4
17.7 -- j9.34
3.14 -- j5.63
(1) Maximum output power measurement reflects pulsed 1 dB gain
compression.
Zsource = Test circuit impedance as measured from gate contact to
ground.
Zload = Test circuit impedance as measured from drain contact to
ground.
Input
Load Pull
Tuner
Output
Load Pull
Tuner
Device
Under
Test
Z
Z
source
load
Figure 11. Carrier Side Load Pull Performance — Maximum P1dB Tuning
VDD = 28 Vdc, IDQA = 280 mA
f
MHz
Max Eff. (1)
%
Zsource
Ω
Zload
Ω
2300
60.9
8.41 -- j14.3
7.02 -- j3.44
2350
60.1
11.4 -- j13.4
6.84 -- j2.41
2400
60.0
17.7 -- j9.35
6.53 -- j2.92
(1) Maximum efficiency measurement reflects pulsed 1 dB gain
compression.
Zsource = Test circuit impedance as measured from gate contact to
ground.
Zload = Test circuit impedance as measured from drain contact to
ground.
Input
Load Pull
Tuner
Output
Load Pull
Tuner
Device
Under
Test
Z
source
Z
load
Figure 12. Carrier Side Load Pull Performance — Maximum Efficiency Tuning
MRF8P23080HR3 MRF8P23080HSR3
8
RF Device Data
Freescale Semiconductor
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 28 Vdc, IDQA = 280 mA,
Pulsed CW, 10 μsec(on), 10% Duty Cycle
54.5
Ideal
Pout, OUTPUT POWER (dBm)
53
51.5
50
Actual
48.5
47
45.5
2400 MHz
2350 MHz
2350 MHz
44
42.5
2400 MHz
2300 MHz
2300 MHz
41
39.5
38
21
22.5
24 25.5
30
28.5
27
31.5
34.5
33
36
37.5
Pin, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
P1dB
P3dB
f
(MHz)
Watts
dBm
Watts
dBm
2300
59
47.7
69
48.4
2350
58
47.6
68
48.3
2400
54
47.3
68
48.3
Test Impedances per Compression Level
f
(MHz)
Zsource
Ω
Zload
Ω
8.40 -- j14.3
3.60 -- j5.30
2300
P1dB
2350
P1dB
11.4 -- j13.4
3.70 -- j5.20
2400
P1dB
17.7 -- j9.30
3.10 -- j5.10
Figure 11. Pulsed CW Output Power
versus Input Power @ 28 V
NOTE: Measurement made on the Class AB, carrier side of the device.
MRF8P23080HR3 MRF8P23080HSR3
RF Device Data
Freescale Semiconductor
9
PACKAGE DIMENSIONS
MRF8P23080HR3 MRF8P23080HSR3
10
RF Device Data
Freescale Semiconductor
MRF8P23080HR3 MRF8P23080HSR3
RF Device Data
Freescale Semiconductor
11
MRF8P23080HR3 MRF8P23080HSR3
12
RF Device Data
Freescale Semiconductor
MRF8P23080HR3 MRF8P23080HSR3
RF Device Data
Freescale Semiconductor
13
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
May 2010
• Initial Release of Data Sheet
1
Nov. 2010
• Updated frequency in overview paragraph from “2300 to 2400 MHz” to “2300 to 2620 MHz” to show the
broadband performance of the part, p. 1
• In Table 2, Thermal Characteristics, Pout = 16 W CW thermal resistance value changed from 0.91 to
0.89_C/W and Pout = 80 W CW thermal resistance value changed from 0.91 to 0.55_C/W. Thermal
values now reflect the use of the combined dissipated power from the carrier amplifier and peaking
amplifier, p. 2.
• Broadband IRL data removed from Fig. 4, Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance and Fig. 8, Broadband Frequency Response graphs. Data not valid indicator of
product performance due to circuit implementation, p. 6, 7.
MRF8P23080HR3 MRF8P23080HSR3
14
RF Device Data
Freescale Semiconductor
How to Reach Us:
Home Page:
www.freescale.com
Web Support:
http://www.freescale.com/support
USA/Europe or Locations Not Listed:
Freescale Semiconductor, Inc.
Technical Information Center, EL516
2100 East Elliot Road
Tempe, Arizona 85284
1--800--521--6274 or +1--480--768--2130
www.freescale.com/support
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
www.freescale.com/support
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1--8--1, Shimo--Meguro, Meguro--ku,
Tokyo 153--0064
Japan
0120 191014 or +81 3 5437 9125
[email protected]
Asia/Pacific:
Freescale Semiconductor China Ltd.
Exchange Building 23F
No. 118 Jianguo Road
Chaoyang District
Beijing 100022
China
+86 10 5879 8000
[email protected]
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
1--800--441--2447 or +1--303--675--2140
Fax: +1--303--675--2150
[email protected]
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
© Freescale Semiconductor, Inc. 2010. All rights reserved.
MRF8P23080HR3 MRF8P23080HSR3
Document
Number:
RF
Device
Data MRF8P23080H
Rev. 1, 11/2010
Freescale
Semiconductor
15