Freescale Semiconductor Technical Data Document Number: AFIC10275N Rev. 0, 4/2015 RF LDMOS Wideband Integrated Power Amplifiers The avionics AFIC10275N is a 2--stage RFIC designed for transponder applications operating from 978 to 1090 MHz. These devices are suitable for use in pulse applications, including Mode S transponders used for ADS--B. Narrowband Performance: (50 Vdc, TA = 25C) Frequency (MHz) 1090 (1) Pout (W) Gps (dB) 2nd Stage Eff. (%) 250 Peak 32.1 61.4 Signal Type Pulse (128 sec, 10% Duty Cycle) AFIC10275N AFIC10275GN 978–1090 MHz, 250 W PEAK, 50 V AIRFAST RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS Typical Wideband Performance (50 Vdc, TA = 25C) Frequency (MHz)(2) 978 1030 Pout (W) Gps (dB) 2nd Stage Eff. (%) 250 Peak 32.6 61.0 32.5 59.1 30.1 60.6 Signal Type Pulse (128 sec, 10% Duty Cycle) 1090 Load Mismatch/Ruggedness Frequency (MHz) 1090 (1) Signal Type VSWR Pulse (128 sec, 10% Duty Cycle) > 10:1 at all Phase Angles Pin (W) Test Voltage 0.345 W Peak (3 dB Overdrive) 50 Result TO--270WB--14 PLASTIC AFIC10275N TO--270WBG--14 PLASTIC AFIC10275GN No Device Degradation 1. Measured in 1090 MHz narrowband test circuit. 2. Measured in 978 – 1090 MHz broadband reference circuit. Features Characterized from 978 to 1090 MHz On--Chip Input (50 Ohm) and Interstage Matching Single Ended Integrated ESD Protection Low Thermal Resistance Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (3) Typical Applications Air Traffic Control Systems (ATC), Including Ground--based Secondary Radars Mode S Transponders, Including: – Traffic Alert and Collision Avoidance Systems (TCAS) – Automatic Dependent Surveillance--Broadcast In and Out (ADS--B) Using, e.g., 1090 Extended Squitter or Universal Access Transponder (UAT) – Mode S ELM Interrogators 3. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family. and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf and search for AN1977 and AN1987. Freescale Semiconductor, Inc., 2015. All rights reserved. RF Device Data Freescale Semiconductor, Inc. AFIC10275N AFIC10275GN 1 VDS1 RFin Stage 1 VGS1 VGS2 Thermal Sense RFout Sense Stage 2 RFout/VDS2 Quiescent Current Temperature Compensation (1) and Thermal Sense VDS1 VGS2 VGS1 N.C. RFin RFin RFin RFin N.C. N.C. Thermal Sense RFout Sense 1 2 3 4 5 6 7 8 9 10 11 12 14 RFout /VDS2 13 RFout /VDS2 (Top View) Note: Exposed backside of the package is the source terminal for the transistors. Figure 1. Functional Block Diagram Figure 2. Pin Connections Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS –0.5, +100 Vdc Gate--Source Voltage VGS –6, +10 Vdc Operating Voltage VDD 50, +0 Vdc Storage Temperature Range Tstg –65 to +150 C TC –40 to 150 C TJ –40 to 225 C Pin 25 dBm Symbol Value (3,4) Unit Case Operating Temperature Range Operating Junction Temperature Range (2,3) Input Power Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 81C, 250 W Peak, 128 sec Pulse Width, 10% Duty Cycle, 1090 MHz Stage 1, 50 Vdc, IDQ1 = 80 mA Stage 2, 50 Vdc, IDQ2 = 150 mA ZJC C/W 1.1 0.15 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) Class 2, passes 2500 V Machine Model (per EIA/JESD22--A115) Class A, passes 150 V Charge Device Model (per JESD22--C101) Class II, passes 200 V Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 C 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family. and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf and search for AN1977 and AN1987. 2. Continuous use at maximum temperature will affect MTTF. 3. MTTF calculator available at http://www.freescale.com/rf/calculators. 4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955. AFIC10275N AFIC10275GN 2 RF Device Data Freescale Semiconductor, Inc. Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 55 Vdc, VGS = 0 Vdc) IDSS — — 1 Adc Gate--Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) IGSS — — 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 52 Adc) VGS(th) 1.3 1.8 2.3 Vdc Fixture Gate Quiescent Voltage (VDD = 50 Vdc, IDQ1 = 80 mAdc, Measured in Functional Test) VGG(Q) 6.0 7.0 8.0 Vdc Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 55 Vdc, VGS = 0 Vdc) IDSS — — 1 Adc Gate--Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) IGSS — — 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 528 Adc) VGS(th) 1.3 1.8 2.3 Vdc Fixture Gate Quiescent Voltage (VDD = 50 Vdc, IDQ2 = 150 mAdc, Measured in Functional Test) VGG(Q) 2.2 2.7 3.2 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 1.6 Adc) VDS(on) — 0.25 — Vdc Characteristic Stage 1 -- Off Characteristics Stage 1 -- On Characteristics Stage 2 -- Off Characteristics Stage 2 -- On Characteristics Functional Tests (1,2) (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ1 = 80 mA, IDQ2 = 150 mA, Pout = 250 W Peak (25 W Avg.), f = 1090 MHz, 128 sec Pulse Width, 10% Duty Cycle Power Gain Gps 30.5 32.1 34.0 dB 2nd Stage Drain Efficiency D 57.0 61.4 — % Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system) IDQ1 = 80 mA, IDQ2 = 150 mA Frequency (MHz) Signal Type 1090 Pulse (128 sec, 10% Duty Cycle) Pin (W) VSWR > 10:1 at all Phase Angles Test Voltage, VDD Result 50 No Device Degradation 0.345 W Peak (3 dB Overdrive) Table 6. Ordering Information Device AFIC10275NR1 AFIC10275GNR1 Tape and Reel Information R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel Package TO--270WB--14 TO--270WBG--14 1. Part internally input matched. 2. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing (GN) parts. AFIC10275N AFIC10275GN RF Device Data Freescale Semiconductor, Inc. 3 TYPICAL CHARACTERISTICS 1.2 VDD = 50 Vdc IDQ1 = 80 mA IDQ2 = 150 mA 1.15 NORMALIZED IDQ 1.1 IDQ2 1.05 1 IDQ1 0.95 0.9 0.85 0.8 --50 --25 0 25 50 75 100 TC, CASE TEMPERATURE (C) Slope (mA/C) IDQ1 --0.008 IDQ2 --0.12 Figure 3. Normalized IDQ versus Case Temperature 109 VDD = 50 Vdc Pulse Width = 128 sec 10% Duty Cycle MTTF (HOURS) 108 ID = 6.52 Amps 8.30 Amps 107 9.36 Amps 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) Note: MTTF value represents the total cumulative operating time under indicated test conditions. MTTF calculator available at: http://www.freescale.com/rf/calculators Figure 4. MTTF versus Junction Temperature -- Pulse AFIC10275N AFIC10275GN 4 RF Device Data Freescale Semiconductor, Inc. 978–1090 MHz BROADBAND REFERENCE CIRCUIT — 1.97 x 2.76 (5.0 cm x 7.0 cm) Table 7. 978–1090 MHz Broadband Performance (In Freescale Reference Circuit, 50 ohm system) VDD = 50 Vdc, IDQ1 = 80 mA, IDQ2 = 150 mA, Pout = 250 W Peak, 128 sec Pulse Width, 10% Duty Cycle Frequency (MHz) Gps (dB) 2nd Stage Eff. (%) Signal Type Pout (W) 978 32.6 61.0 Pulse 250 1030 32.5 59.1 Pulse 250 1090 30.1 60.6 Pulse 250 Note: For additional information on the 978--1090 broadband reference circuit, contact your local Freescale sales office or Freescale authorized distributor. AFIC10275N AFIC10275GN RF Device Data Freescale Semiconductor, Inc. 5 978–1090 MHz BROADBAND REFERENCE CIRCUIT Zload f = 1090 MHz Zo = 50 f = 978 MHz Zsource f = 978 MHz f = 1090 MHz f MHz Zsource Zload 978 26.0 -- j18 2.2 + j0.05 1030 30.0 -- j23 1.5 + j0.90 1090 36.7 -- j29 1.3 + j0.60 Zsource = Test circuit input impedance as measured from gate to ground. Zload 50 = Test circuit impedance as measured from drain to ground. Device Under Test Input Matching Network Zsource Output Matching Network Zload 50 Figure 5. Broadband Series Equivalent Source and Load Impedance — 978–1090 MHz AFIC10275N AFIC10275GN 6 RF Device Data Freescale Semiconductor, Inc. 1090 MHz REFERENCE CIRCUIT — 1.97 x 2.76 (5.0 cm x 7.0 cm) R3 VDD1 C18 C25 C17 R4 R5 R6 C19 C20 C21 C26 C1 C23 C24 Q1 R1 C10 C9 C6 Thermal Sense C13* C14* C12 C8 C7 D64966 R2 C12 RFout Sense C15* C16* C22 AFIC10275N Rev. B VDD2 * Stacked Capacitors Note: Component numbers C2, C3, C4, and C5 are not used. Figure 6. AFIC10275N Reference Component Layout — 1090 MHz Table 8. AFIC10275N Reference Circuit Component Designations and Values — 1090 MHz Part Description Part Number Manufacturer C1, C10 56 pF Chip Capacitors ATC600F560JT250XT ATC C11, C12, C17, C18, C19 51 pF Chip Capacitors ATC600F510JT250XT ATC C6, C7 10 pF Chip Capacitors ATC600F100JT250XT ATC C8 6.8 pF Chip Capacitor ATC600F6R8BT250XT ATC C9 2.4 pF Chip Capacitor ATC600F2R4BT250XT ATC C13, C14, C15, C16, C25, C26 10 F Chip Capacitors C5750X7S2A106M TDK C20 1 F Chip Capacitor GRM21BR71H105KA12L Murata C21, C22 8.2 pF Chip Capacitors ATC600F8R2BT250XT ATC C23 2.7 pF Chip Capacitor ATC600F2R7BT250XT ATC C24 1.5 pF Chip Capacitor ATC600F1R5BT250XT ATC R1 13.7 k 1/16 W Chip Resistor RR0816P-1372-B-T5-14C Susumu R2 1.2 k 1/16 W Chip Resistor RR0816P-122-B-T5 Susumu Q1 RF Power LDMOS Transistor AFIC10275NR1 Freescale PCB Taconic RF60A 0.025, r = 6.15 D64966 MTL AFIC10275N AFIC10275GN RF Device Data Freescale Semiconductor, Inc. 7 TYPICAL CHARACTERISTICS — 1090 MHz REFERENCE CIRCUIT 35 Gps, POWER GAIN (dB) 32 50 30 Gps 31 10 30 300 29 250 28 200 VDD = 50 Vdc, f = 1090 MHz IDQ1 = 80 mA, IDQ2 = 150 mA Pulse Width =128 sec Duty Cycle = 10% Pout 27 26 25 24 0.0 0.05 0.1 0.2 0.15 0.25 0.3 150 100 50 0 0.35 Pout, OUTPUT POWER (WATTS) PEAK 70 D 33 D, DRAIN EFFICIENCY (%) 90 34 Pin, INPUT POWER (WATTS) PEAK Figure 7. Power Gain, Drain Efficiency and Output Power versus Input Power Pout, OUTPUT POWER (WATTS) PEAK 300 250 200 150 100 VDD = 50 Vdc, f = 1090 MHz IDQ1 = 80 mA, IDQ2 = 150 mA Pulse Width = 128 sec Duty Cycle = 10% 50 0 0.0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 Pin, INPUT POWER (WATTS) PEAK Figure 8. Output Power versus Input Power f MHz Zsource Zload 1090 36.7 -- j29 1.3 + j0.60 Zsource = Test circuit input impedance as measured from gate to ground. Zload 50 = Test circuit impedance as measured from drain to ground. Device Under Test Input Matching Network Zsource Output Matching Network Zload 50 Figure 9. Series Equivalent Source and Load Impedance — 1090 MHz AFIC10275N AFIC10275GN 8 RF Device Data Freescale Semiconductor, Inc. 1090 MHz NARROWBAND PRODUCTION TEST FIXTURE Table 9. 1090 MHz Narrowband Performance (1,2) (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ1 = 80 mA, IDQ2 = 150 mA, Pout = 250 W Peak (25 W Avg.), f = 1090 MHz, 128 sec Pulse Width, 10% Duty Cycle Symbol Min Typ Max Unit Power Gain Characteristic Gps 30.5 32.1 34.0 dB 2nd Stage Drain Efficiency D 57.0 61.4 — % 1. Part internally input matched. 2. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing (GN) parts. AFIC10275N AFIC10275GN RF Device Data Freescale Semiconductor, Inc. 9 1090 MHz NARROWBAND PRODUCTION TEST FIXTURE — 4 x 5 (10.2 cm x 12.7 cm) C7 VDD1 C20 D65206 R1 C17 C13 C12 VGG2 C4 C1 C11 C9 C2 C3 C5 Thermal Sense R3 D1 R4 U1 R5 PDET C21 R7 V3 R6 C24 C23 C22 CUT OUT AREA VGG1 C6 R2 VDD2 C19 C10 C8 VDD2 C14 C15 C16 C18 AFIC10275N Rev. 1 Figure 10. AFIC10275N Narrowband Test Circuit Component Layout — 1090 MHz Table 10. AFIC10275N Narrowband Test Circuit Component Designations and Values — 1090 MHz Part Description Part Number Manufacturer C1 47 pF Chip Capacitor ATC600F470JT250XT ATC C2 2.7 pF Chip Capacitor ATC100B2R7CT500XT ATC C3 2.0 pF Chip Capacitor ATC100B2R0BW500XT ATC C4 1 F Chip Capacitor GRM31MR71H105KA88L Murata C5, C6, C7, C11, C14 43 pF Chip Capacitors ATC100B430JT500XT ATC C8, C9 10 pF Chip Capacitors ATC100B100JT500XT ATC C10 4.7 pF Chip Capacitor ATC100B4R7CT500XT ATC C12, C13, C15, C16, C20 10 F Chip Capacitors C5750X752A106M230KB TDK C17, C18 220 F, 100 V Electrolytic Capacitors MCGPR100V227M16X26-RH Multicomp C19 30 pF Chip Capacitor ATC600F300JT250XT ATC C21 10 nF Chip Capacitor C0805C103J5RAC-TU Kemet C22 0.1 F Chip Capacitor C1206C104K1RAC-TU Kemet C23 47 pF Chip Capacitor ATC800B470JT500XT ATC C24 1000 pF Chip Capacitor C2012X7R2E102K085AA TDK D1 Diode Schottky RF SGL 70 V SOT-23 HSMS--2800--TR1G Avago Technologies R1 2.2 k, 1/8 W Chip Resistor CRCW08052K20JNEA Vishay R2 0 , 1 A Chip Resistor CWCR08050000Z0EA Vishay R3 1 k, 1/10 W Chip Resistor RR1220P-102-D Susumu R4 50 , 10 W Chip Resistor 060120A25X50--2 Anaren R5 15 k, 1/10 W Chip Resistor RR1220P-153-D Susumu R6 51 , 1/8 W Chip Resistor RK73B2ATTD510J KOA Speer R7 470 k, 1/4 W Chip Resistor CRCW1206470KFKEA Vishay U1 IC Detector RF PWR 3GHZ SC70--6 LT5534ESC6#TRMPBF Linear Technology PCB Rogers, RO4350B, 0.020, r = 3.66 D65206 MTL AFIC10275N AFIC10275GN 10 RF Device Data Freescale Semiconductor, Inc. RF Device Data Freescale Semiconductor, Inc. RFout Sense VGG1 V3 VGG2 C21 Z1 D1 C1 Z2 C5 C6 C7 C24 U1 R6 C3 R5 R4 Z4 R3 Z5 12 11 10 9 8 7 6 Quiescent Current Temperature Compentation and Thermal Sense 0.188 0.043 Microstrip 0.857 0.043 Microstrip 0.170 0.140 Microstrip Z3 Z4 Z5 * Line length include microstrip bends 0.849 0.043 Microstrip Z2 Description 0.202 0.043 Microstrip Z1 Microstrip 13 14 Z6 Z16 Z14 Z7 Z13 Z15 Microstrip Z10 Z9 Z8 Z7 Z6 Description 0.215 0.044 Microstrip 0.587 0.118 Microstrip 0.404 0.378 Microstrip 0.058 0.378 Microstrip 0.030 0.378 Microstrip Z17, Z18 Z15,* Z16* Z13, Z14 Z12 Z11 Microstrip Z18 C8 C15 C9 Z9 C12 Description C14 Z8 C11 Z17 Z10 C16 C13 0.249 0.058 Microstrip 1.150 0.058 Microstrip 0.025 0.485 Microstrip 0.803 0.058 Microstrip 0.774 0.044 Microstrip Figure 11. AFIC10275N Narrowband Test Circuit Schematic — 1090 MHz Thermal Sense C2 Z3 5 4 3 2 1 Table 11. AFIC10275N Narrowband Test Circuit Microstrips — 1090 MHz C23 C20 C10 Z11 C19 C17 C18 + C22 R7 R2 R1 RF INPUT C4 VDD1 + AFIC10275N AFIC10275GN 11 VDD2 Z12 VDD2 RF OUTPUT TYPICAL CHARACTERISTICS — 1090 MHz NARROWBAND PRODUCTION TEST FIXTURE 34 53 Gps, POWER GAIN (dB) Pout, OUTPUT POWER (dBm) PEAK 33 54 52 51 50 49 48 47 VDD = 50 Vdc, IDQ1 = 80 mA, IDQ2 = 150 mA f = 1090 MHz, Pulse Width = 128 sec, 10% Duty Cycle 46 45 14 16 18 20 22 24 26 28 60 50 32 Gps 31 40 30 30 D 29 20 28 10 30 70 VDD = 50 Vdc, IDQ1 = 80 mA, IDQ2 = 150 mA f = 1090 MHz, Pulse Width = 128 sec, 10% Duty Cycle 55 10 500 100 Pin, INPUT POWER (dBm) PEAK D DRAIN EFFICIENCY (%) 56 Pout, OUTPUT POWER (WATTS) PEAK f (MHz) P1dB (W) P3dB (W) 1090 265 284 Figure 13. Power Gain and Drain Efficiency versus Output Power and Quiescent Current Figure 12. Output Power versus Input Power 33 32 25_C 30 29 85_C 25_C D Gps 85_C 28 27 10 33 80 32 70 --40_C TC = --40_C 31 90 100 60 50 40 30 Gps, POWER GAIN (dB) Gps, POWER GAIN (dB) 34 VDD = 50 Vdc, IDQ1 = 80 mA, IDQ2 = 150 mA f = 1090 MHz, Pulse Width = 128 sec 10% Duty Cycle D, DRAIN EFFICIENCY (%) 35 31 30 29 50 V 28 40 V 27 20 26 10 500 25 35 V VDD = 30 V 0 50 100 45 V IDQ1 = 80 mA, IDQ2 = 150 mA f = 1090 MHz, Pulse Width = 128 sec 10% Duty Cycle 150 200 250 300 Pout, OUTPUT POWER (WATTS) PEAK Pout, OUTPUT POWER (WATTS) PEAK Figure 14. Power Gain and Drain Efficiency versus Output Power Figure 15. Power Gain versus Output Power and Drain--Source Voltage 350 AFIC10275N AFIC10275GN 12 RF Device Data Freescale Semiconductor, Inc. 1090 MHz NARROWBAND PRODUCTION TEST FIXTURE f MHz Zsource Zload 1090 13.6 – j24.4 1.3 + j0.4 Zsource = Test circuit impedance as measured from gate to ground. Zload 50 = Test circuit impedance as measured from drain to ground. Device Under Test Input Matching Network Zsource Output Matching Network 50 Zload Figure 16. Narrowband Series Equivalent Source and Load Impedance — 1090 MHz AFIC10275N AFIC10275GN RF Device Data Freescale Semiconductor, Inc. 13 0.221 (5.61) 0.180 (4.57) 0.590 (14.99) 2X SOLDER PADS 0.352(1) (8.94) 0.372(1) (9.45) 12X SOLDER PADS 0.040 (1.02) 0.020 (0.51) Inches (mm) 0.723(1) (18.36) 1. Slot dimensions are minimum dimensions and exclude milling tolerances. Figure 17. PCB Pad Layout for TO--270WB--14 0.221 (5.61) 0.180 (4.57) 0.351 (8.92) 0.310 (7.87) Solder pad with thermal via structure. 0.020 (0.51) 0.463 (11.76) 0.040 (1.02) 0.720 (18.29) Figure 18. PCB Pad Layout for TO--270WBG--14 AFIC10275N AFIC10275GN 14 RF Device Data Freescale Semiconductor, Inc. PACKAGE DIMENSIONS AFIC10275N AFIC10275GN RF Device Data Freescale Semiconductor, Inc. 15 AFIC10275N AFIC10275GN 16 RF Device Data Freescale Semiconductor, Inc. AFIC10275N AFIC10275GN RF Device Data Freescale Semiconductor, Inc. 17 AFIC10275N AFIC10275GN 18 RF Device Data Freescale Semiconductor, Inc. AFIC10275N AFIC10275GN RF Device Data Freescale Semiconductor, Inc. 19 AFIC10275N AFIC10275GN 20 RF Device Data Freescale Semiconductor, Inc. PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes AN1907: Solder Reflow Attach Method for HIgh Power RF Devices in Plastic Packages AN1955: Thermal Measurement Methodology of RF Power Amplifiers AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices White Paper RFPLASTICWP: Designing with Plastic RF Power Transistors Software Electromigration MTTF Calculator RF High Power Model Development Tools Printed Circuit Boards To Download Resources Specific to a Given Part Number: 1. Go to http://www.freescale.com/rf 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Apr. 2015 Description Initial Release of Data Sheet AFIC10275N AFIC10275GN RF Device Data Freescale Semiconductor, Inc. 21 How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. 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U.S. Pat. & Tm. Off. Airfast is a trademark of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. E 2015 Freescale Semiconductor, Inc. AFIC10275N AFIC10275GN Document Number: AFIC10275N Rev. 0, 4/2015 22 RF Device Data Freescale Semiconductor, Inc.