Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 6/2012 RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs Designed for mobile two--way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, common source amplifier applications in mobile radio equipment. Typical Performance: (13.6 Vdc, TA = 25°C, CW) Frequency (MHz) Gps (dB) ηD (%) P1dB (W) 380--450 (1,3) 18.3 64.1 31 450--520 (2,3) 17.7 62.0 31 17.7 71.4 33 520 (4) AFT05MS031NR1 AFT05MS031GNR1 136--520 MHz, 31 W, 13.6 V WIDEBAND RF POWER LDMOS TRANSISTORS TO--270--2 PLASTIC AFT05MS031NR1 Load Mismatch/Ruggedness Frequency (MHz) Signal Type 520 (4) CW VSWR Pout (W) Test Voltage >65:1 at all Phase Angles 47 (3 dB Overdrive) 17 Result No Device Degradation 1. Measured in 380--450 MHz UHF wideband reference circuit. 2. Measured in 450--520 MHz UHF wideband reference circuit. 3. The values shown are the minimum measured performance numbers across the indicated frequency range. 4. Measured in 520 MHz narrowband test circuit. Features • Characterized for Operation from 136 to 520 MHz • Unmatched Input and Output Allowing Wide Frequency Range Utilization • Integrated ESD Protection • Integrated Stability Enhancements • Wideband — Full Power Across the Band: − 136--174 MHz − 380--450 MHz − 450--520 MHz • 225°C Capable Plastic Package • Exceptional Thermal Performance • High Linearity for: TETRA, SSB, LTE • Cost--effective Over--molded Plastic Packaging • In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13 inch Reel. Typical Applications • Output Stage VHF Band Mobile Radio • Output Stage UHF Band Mobile Radio © Freescale Semiconductor, Inc., 2012. All rights reserved. RF Device Data Freescale Semiconductor, Inc. TO--270--2 GULL PLASTIC AFT05MS031GNR1 Drain Gate (Top View) Note: The backside of the package is the source terminal for the transistor. Figure 1. Pin Connections AFT05MS031NR1 AFT05MS031GNR1 1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +40 Vdc Gate--Source Voltage VGS --6.0, +12 Vdc Operating Voltage VDD 17, +0 Vdc Storage Temperature Range Tstg --65 to +150 °C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 294 1.47 W W/°C Operating Junction Temperature (1,2) TJ 225 °C Symbol Value (2,3) Unit RθJC 0.67 °C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 79°C, 31 W CW, 13.6 Vdc, IDQ = 10 mA, 520 MHz Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2, passes 2500 V Machine Model (per EIA/JESD22--A115) A, passes 100 V Charge Device Model (per JESD22--C101) IV, passes 2000 V Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 40 Vdc, VGS = 0 Vdc) IDSS — — 2 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 13.6 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 600 nAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 115 μAdc) VGS(th) 1.6 2.1 2.6 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 1.2 Adc) VDS(on) — 0.13 — Vdc Forward Transconductance (VGS = 10 Vdc, ID = 7.5 Adc) gfs — 5.8 — S Characteristic Off Characteristics On Characteristics 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. (continued) AFT05MS031NR1 AFT05MS031GNR1 2 RF Device Data Freescale Semiconductor, Inc. Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Reverse Transfer Capacitance (VDS = 13.6 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.6 — pF Output Capacitance (VDS = 13.6 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 49.5 — pF Input Capacitance (VDS = 13.6 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 109 — pF Dynamic Characteristics Functional Tests (1) (In Freescale Narrowband Test Fixture, 50 ohm system) VDD = 13.6 Vdc, IDQ = 10 mA, Pout = 31 W, f = 520 MHz Common--Source Amplifier Power Gain Gps 16.5 17.7 19.0 dB Drain Efficiency ηD 70.0 71.4 — % Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system, IDQ = 10 mA) Frequency (MHz) Signal Type VSWR 520 CW >65:1 at all Phase Angles Pout (W) 47 (3 dB Overdrive) Test Voltage, VDD Result 17 No Device Degradation 1. Measurement made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing (GN) parts. AFT05MS031NR1 AFT05MS031GNR1 RF Device Data Freescale Semiconductor, Inc. 3 TYPICAL CHARACTERISTICS 7 1000 IDS, DRAIN CURRENT (AMPS) C, CAPACITANCE (pF) Measured with ±30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc Ciss 100 Coss 10 TA = 25°C 6 VGS = 4.25 Vdc 4 Vdc 5 4 3.75 Vdc 3 3.5 Vdc 2 3.25 Vdc 1 Crss 3 Vdc 2.75 Vdc 0 1 0 4 8 12 16 8 4 0 20 12 16 20 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Figure 2. Capacitance versus Drain--Source Voltage Note: Measured with both sides of the transistor tied together. Figure 3. Drain Current versus Drain--Source Voltage 109 VDD = 13.6 Vdc 108 MTTF (HOURS) ID = 2.5 Amps 107 3.2 Amps 106 3.9 Amps 105 104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) Note: MTTF value represents the total cumulative operating time under indicated test conditions. Figure 4. MTTF versus Junction Temperature -- CW AFT05MS031NR1 AFT05MS031GNR1 4 RF Device Data Freescale Semiconductor, Inc. 520 MHz NARROWBAND PRODUCTION TEST FIXTURE C7 B1 C3 C2 C13 C14 C16 C4 L1 C6 B3 B2 C18 C8 C5 L2 C9 C10 CUT OUT AREA C1 C11 C15 C12 C17 AFT05MS031N Rev. 1 Figure 5. AFT05MS031NR1 Narrowband Test Circuit Component Layout — 520 MHz Table 6. AFT05MS031NR1 Narrowband Test Circuit Component Designations and Values — 520 MHz Part Description Part Number Manufacturer B1, B2, B3 RF Beads, Long 2743021447 Fair--Rite C1 22 μF, 35 V Tantalum Capacitor T491X226K035AT Kemet C2, C14 0.01 μF Chip Capacitors C0805C103K5RAC Kemet C3, C13 0.1 μF Chip Capacitors CDR33BX104AKWS Kemet C4 200 pF Chip Capacitor ATC100B201JT300XT ATC C5 6.2 pF Chip Capacitor ATC100B6R2JT500XT ATC C6 3.9 pF Chip Capacitor ATC100B3R9JT500XT ATC C7, C16 180 pF Chip Capacitors ATC100B181JT200XT ATC C8 10 pF Chip Capacitor ATC100B100JT500XT ATC C9, C10, C11, C12 36 pF Chip Capacitors ATC100B360JT500XT ATC C15 27 pF Chip Capacitor ATC100B270JT500XT ATC C17 7.5 pF Chip Capacitor ATC100B7R5JT500XT ATC C18 470 μF, 63 V Electrolytic Capacitor SME63V471M12X25LL United Chemi--Con L1 43 nH, 10 Turn Inductor B10TJLC Coilcraft L2 56 nH Inductor 1812SMS--56NJLC Coilcraft PCB 0.030″, εr = 2.55 AD255A Arlon AFT05MS031NR1 AFT05MS031GNR1 RF Device Data Freescale Semiconductor, Inc. 5 AFT05MS031NR1 AFT05MS031GNR1 6 RF Device Data Freescale Semiconductor, Inc. RF INPUT VGS + Z1 C1 C5 C2 C6 Z3 C4 Z4 C7 Z5 Z6 L1 C10 Z7 C8 Z8 C9 Z9 C12 Z10 Z11 L2 C15 Z12 C13 C14 Description 0.079″ × 0.082″ Microstrip 0.352″ × 0.082″ Microstrip Z6 Z7 Z4* 0.370″ × 0.082″ Microstrip 0.560″ × 0.060″ Microstrip Z3* Z5* 0.017″ × 0.082″ Microstrip 0.670″ × 0.082″ Microstrip Z2 0.199″ × 0.082″ Microstrip Z1 Microstrip Description 0.315″ × 0.082″ Microstrip Z14 * Line length includes microstrip bends 0.1420″ × 0.082″ Microstrip Z13* 0.091″ × 0.082″ Microstrip Z11 0.1322″ × 0.082″ Microstrip Z10 Z12* 0.257″ × 0.275″ Microstrip 0.145″ × 0.275″ Microstrip Z9 0.190″ × 0.270″ Microstrip Z8 Microstrip Table 7. AFT05MS031NR1 Narrowband Test Circuit Microstrips — 520 MHz Figure 6. AFT05MS031NR1 Narrowband Test Circuit Schematic — 520 MHz Z2 C3 C16 C17 Z13 C18 + C11 Z14 VDS RF OUTPUT TYPICAL CHARACTERISTICS — 520 MHz 50 VDD = 13.6 Vdc, Pin = 0.6 W Pout, OUTPUT POWER (WATTS) 45 VDD = 13.6 Vdc, Pin = 0.3 W 40 VDD = 12.5 Vdc, Pin = 0.6 W 35 30 25 20 VDD = 12.5 Vdc Pin = 0.3 W 15 10 5 0 f = 520 MHz 1 0 2 3 4 5 6 VGS, GATE--SOURCE VOLTAGE (VOLTS) Figure 7. Output Power versus Gate--Source Voltage 20 70 60 17 16 50 Gps 15 40 Pout 14 30 13 20 12 10 ηD, DRAIN EFFICIENCY (%) 18 Gps, POWER GAIN (dB) 80 ηD Pout, OUTPUT POWER (WATTS) 19 90 VDD = 13.6 Vdc, IDQ = 10 mA f = 520 MHz 0 11 0.03 1 0.1 3 Pin, INPUT POWER (WATTS) Figure 8. Power Gain, Output Power and Drain Efficiency versus Input Power VDD = 13.6 Vdc, IDQ = 10 mA, Pout = 31 W Avg. f MHz Zsource Ω Zload Ω 520 0.72 + j1.77 1.54 + j0.80 Zsource = Test circuit impedance as measured from gate to ground. Zload 50 Ω = Test circuit impedance as measured from drain to ground. Input Matching Network Output Matching Network Device Under Test Zsource 50 Ω Zload Figure 9. Narrowband Series Equivalent Source and Load Impedance — 520 MHz AFT05MS031NR1 AFT05MS031GNR1 RF Device Data Freescale Semiconductor, Inc. 7 380--450 MHz UHF WIDEBAND REFERENCE CIRCUIT, 50 OHM SYSTEM Table 8. 380--450 MHz UHF Wideband Performance (13.6 Vdc, IDQ = 100 mA, TA = 25°C, CW) Frequency (MHz) Gps (dB) ηD (%) P1dB (W) 380 18.7 64.1 31 420 18.6 67.0 31 450 18.3 68.1 31 Table 9. Load Mismatch/Ruggedness (In Freescale Reference Circuit) Frequency (MHz) Signal Type 420 CW VSWR Pout (W) >65:1 at all Phase Angles 62 (3 dB Overdrive) Test Voltage, VDD Result 17 No Device Degradation AFT05MS031NR1 AFT05MS031GNR1 8 RF Device Data Freescale Semiconductor, Inc. 380--450 MHz UHF WIDEBAND REFERENCE CIRCUIT VDS VGS B1 C1 C17 J1 C12 C16 C6 TO--270--2 Rev. 0 L1 B2 C13 C14 C15 C11 L7 R1 C5* C8 L4 C10 C2 Q1 L6 C7 C4* L2 L3 L5 C3 C9 * C4 and C5 are mounted vertically. Figure 10. AFT05MS031NR1 UHF Wideband Reference Circuit Component Layout — 380--450 MHz Table 10. AFT05MS031NR1 UHF Wideband Reference Circuit Component Designations and Values — 380--450 MHz Part Description Part Number Manufacturer B1 Low Current Ferrite Bead 2508051107Y0 Fair--Rite B2 High Current Ferrite Bead 2518065007Y6 Fair--Rite C1, C5 56 pF Chip Capacitors ATC600F560JT250XT ATC C2 3.9 pF Chip Capacitor ATC600F3R9BT250XT ATC C3 18 pF Chip Capacitor ATC600F180JT250XT ATC C4 47 pF Chip Capacitor ATC600F470JT250XT ATC C6, C12, C15 240 pF Chip Capacitors ATC600F241JT250XT ATC C7 24 pF Chip Capacitor ATC600F240JT250XT ATC C8 68 pF Chip Capacitor ATC600F680JT250XT ATC C9 27 pF Chip Capacitor ATC600F270JT250XT ATC C10 8.2 pF Chip Capacitor ATC600F8R2BT250XT ATC C11 3.0 pF Chip Capacitor ATC600F3R0BT250XT ATC C13 0.1 μF Chip Capacitor GRM21BR71H104KA01B Murata C14 1 μF Chip Capacitor GRM21BR71H105KA12L Murata C16, C17 10 μF Chip Capacitors GRM31CR61H106KA12L Murata J1 3 Pin Connector AMP--9--146305--0 TE Connectivity L1, L2, L3, L6 5.5 nH Inductors 0806SQ--5N5GLC Coilcraft L4 17 nH Inductor 0908SQ--17NGLC Coilcraft L5 1.65 nH Inductor 0906--2KLC Coilcraft L7 2.55 nH Inductor 0906--3JLC Coilcraft Q1 RF Power LDMOS Transistor AFT05MS031NR1 Freescale R1 62 Ω, 1/4 W Chip Resistor RG2012N--620--BT1 Susumu PCB 0.020″, εr = 4.9 S1000--2, FR4 Shengyi AFT05MS031NR1 AFT05MS031GNR1 RF Device Data Freescale Semiconductor, Inc. 9 AFT05MS031NR1 AFT05MS031GNR1 10 RF Device Data Freescale Semiconductor, Inc. RF INPUT Z1 C1 Z2 L1 C2 Z4 L2 C3 Z6 L3 Z7 C4 Z8 C5 Z9 C6 Z10 Z12 Z13 Z11 R1 B1 Z14 C7 Z15 Z16 Z18 Z19 L4 B2 Z17 C8 Z20 L5 C13 0.034″ × 0.200″ Microstrip 0.034″ × 0.056″ Microstrip 0.034″ × 0.154″ Microstrip 0.034″ × 0.237″ Microstrip 0.034″ × 0.234″ Microstrip 0.034″ × 0.010″ Microstrip 0.034″ × 0.083″ Microstrip Z2 Z3 Z4 Z5* Z6* Z7 Z8, Z24 Description 0.034″ × 0.060″ Microstrip Z1, Z27 Microstrip Z21 Z22 C9 C16 L6 0.240″ × 0.048″ Microstrip 0.240″ × 0.142″ Microstrip 0.034″ × 0.149″ Microstrip 0.034″ × 0.085″ Microstrip 0.240″ × 0.090″ Microstrip 0.240″ × 0.186″ Microstrip 0.240″ × 0.044″ Microstrip Z10 Z11 Z12, Z16 Z13, Z17* Z14 Z15 Z18 Description 0.034″ × 0.178″ Microstrip Z9 Microstrip Z24 0.034″ × 0.077″ Microstrip 0.034″ × 0.073″ Microstrip 0.034″ × 0.112″ Microstrip 0.034″ × 0.361″ Microstrip 0.034″ × 0.110″ Microstrip 0.034″ × 0.201″ Microstrip 0.034″ × 0.057″ Microstrip C10 * Line length includes microstrip bends Z26 Z25 Z23 Z22* Z21* Z20* Z19 Microstrip Z23 Description Figure 11. AFT05MS031NR1 UHF Wideband Reference Circuit Schematic — 380--450 MHz Z5 C17 C14 Table 11. AFT05MS031NR1 UHF Wideband Reference Circuit Microstrips — 380--450 MHz Z3 VGS C15 VDS L7 Z25 C11 Z26 C12 Z27 RF OUTPUT 18 Gps, POWER GAIN (dB) 17.8 80 VDD = 12.5 Vdc, Pin = 0.5 W (Avg.) IDQ = 100 mA 75 ηD 70 65 17.7 17.6 60 Gps 17.5 17.4 30 29 Pout 17.3 28 17.2 27 17.1 26 17 370 380 390 400 410 420 430 440 450 Pout, OUTPUT POWER (WATTS) 17.9 ηD, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS — 380--450 MHz UHF WIDEBAND REFERENCE CIRCUIT 25 460 f, FREQUENCY (MHz) 18.4 Gps, POWER GAIN (dB) 18.3 80 VDD = 13.6 Vdc, Pin = 0.5 W (Avg.) IDQ = 100 mA 75 ηD 18.2 70 65 Gps 18.1 60 18 35 17.9 34 17.8 33 Pout 17.7 32 17.6 31 17.5 370 380 390 400 410 420 430 440 450 Pout, OUTPUT POWER (WATTS) 18.5 ηD, DRAIN EFFICIENCY (%) Figure 12. Power Gain, Output Power and Drain Efficiency versus Frequency at a Constant Input Power — 12.5 V 30 460 f, FREQUENCY (MHz) Figure 13. Power Gain, Output Power and Drain Efficiency versus Frequency at a Constant Input Power — 13.6 V AFT05MS031NR1 AFT05MS031GNR1 RF Device Data Freescale Semiconductor, Inc. 11 TYPICAL CHARACTERISTICS — 380--450 MHz UHF WIDEBAND REFERENCE CIRCUIT VDD = 13.6 Vdc, Pin = 0.5 W 5 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) 50 VDD = 13.6 Vdc, Pin = 0.25 W 40 VDD = 12.5 Vdc, Pin = 0.5 W 30 VDD = 12.5 Vdc, Pin = 0.25 W 20 10 f = 420 MHz 0 1 2 3 VDD = 12.5 Vdc, Pin = 0.5 W 2 VDD = 12.5 Vdc, Pin = 0.25 W 1 f = 420 MHz 0 Detail A 0 3 4 VDD = 13.6 Vdc, Pin = 0.25 W VDD = 13.6 Vdc, 4 Pin = 0.5 W 0 0.4 0.8 1.6 1.2 2 VGS, GATE--SOURCE VOLTAGE (VOLTS) 5 Detail A VGS, GATE--SOURCE VOLTAGE (VOLTS) Figure 14. Output Power versus Gate--Source Voltage 420 MHz 450 MHz 380 MHz 450 MHz 18 420 MHz Gps 16 60 450 MHz 40 380 MHz 380 MHz 14 12 0.01 20 Pout ηD 0 0.1 1 70 Pout, OUTPUT POWER (WATTS) 420 MHz 80 60 50 40 30 20 ηD, DRAIN EFFICIENCY (%) VDD = 13.6 Vdc, IDQ = 100 mA 20 Gps, POWER GAIN (dB) 80 100 22 10 4 Pin, INPUT POWER (WATTS) Figure 15. Power Gain, Output Power and Drain Efficiency versus Input Power and Frequency AFT05MS031NR1 AFT05MS031GNR1 12 RF Device Data Freescale Semiconductor, Inc. 380--450 MHz UHF WIDEBAND REFERENCE CIRCUIT Zo = 5 Ω f = 450 MHz f = 380 MHz f = 450 MHz Zsource f = 380 MHz Zload VDD = 13.6 Vdc, IDQ = 10 mA, Pout = 31 W Avg. f MHz Zsource Ω Zload Ω 380 1.57 + j1.94 2.53 -- j0.27 390 1.66 + j2.07 2.53 -- j0.26 400 1.74 + j2.16 2.56 -- j0.27 410 1.79 + j2.20 2.49 -- j0.29 420 1.79 + j2.21 2.38 -- j0.28 430 1.74 + j2.21 2.26 -- j0.24 440 1.62 + j2.23 2.11 -- j0.16 450 1.45 + j2.29 1.95 -- j0.05 Zsource = Test circuit impedance as measured from gate to ground. Zload 50 Ω = Test circuit impedance as measured from drain to ground. Input Matching Network Output Matching Network Device Under Test Zsource 50 Ω Zload Figure 16. UHF Wideband Series Equivalent Source and Load Impedance — 380--450 MHz AFT05MS031NR1 AFT05MS031GNR1 RF Device Data Freescale Semiconductor, Inc. 13 450--520 MHz UHF WIDEBAND REFERENCE CIRCUIT, 50 OHM SYSTEM Table 12. 450--520 MHz UHF Wideband Performance (13.6 Vdc, IDQ = 100 mA, TA = 25°C, CW) Frequency (MHz) Gps (dB) ηD (%) P1dB (W) 450 17.7 62.0 31 490 18.7 63.8 31 520 17.9 67.0 31 Table 13. Load Mismatch/Ruggedness (In Freescale Reference Circuit) Frequency (MHz) Signal Type 490 CW VSWR Pout (W) >65:1 at all Phase Angles 62 (3 dB Overdrive) Test Voltage, VDD Result 17 No Device Degradation AFT05MS031NR1 AFT05MS031GNR1 14 RF Device Data Freescale Semiconductor, Inc. 450--520 MHz UHF WIDEBAND REFERENCE CIRCUIT C1 VDS VGS B1 B2 C13 C14 C15 C19 J1 C18 C16 TO--270--2 Rev. 0 L1 C12 L7 R1 C5 C6 C9 C11 L4 Q1 C2 C17 C8 C4 C7 L2 L3 L6 L5 C3 C10 Figure 17. AFT05MS031NR1 UHF Wideband Reference Circuit Component Layout — 450--520 MHz Table 14. AFT05MS031NR1 UHF Wideband Reference Circuit Component Designations and Values — 450--520 MHz Part Description Part Number Manufacturer B1 Low Current Ferrite Bead 2508051107Y0 Fair--Rite B2 High Current Ferrite Bead 2518065007Y6 Fair--Rite C1 56 pF Chip Capacitor ATC600F560JT250XT ATC C2 2.7 pF Chip Capacitor ATC600F2R7BT250XT ATC C3 12 pF Chip Capacitor ATC600F120JT250XT ATC C4, C9 27 pF Chip Capacitors ATC600F270JT250XT ATC C5, C8 33 pF Chip Capacitors ATC600F330JT250XT ATC C6 39 pF Chip Capacitor ATC600F390JT250XT ATC C7, C10 18 pF Chip Capacitors ATC600F180JT250XT ATC C11 8.2 pF Chip Capacitor ATC600F8R2BT250XT ATC C12 1.8 pF Chip Capacitor ATC600F1R8BT250XT ATC C13 0.1 μF Chip Capacitor GRM21BR71H104KA01B Murata C14 1 μF Chip Capacitor GRM21BR71H105KA12L Murata C15, C16, C17 240 pF Chip Capacitors ATC600F241JT250XT ATC C18, C19 10 μF Chip Capacitors GRM31CR61H106KA12L Murata J1 3 Pin Connector AMP--9--146305--0 TE Connectivity L1, L3 6.0 nH Inductors 0806SQ--6N0GLC Coilcraft L2, L6 5.5 nH Inductors 0806SQ5N5GLC Coilcraft L4 17 nH Inductor 0908SQ--17NGLC Coilcraft L5, L7 1.65 nH Inductors 0906--2KLC Coilcraft Q1 RF Power LDMOS Transistor AFT05MS031NR1 Freescale R1 62 Ω, 1/4 W Chip Resistor RG2012N--620--BT1 Susumu PCB 0.020″, εr = 4.9 S1000--2, FR4 Shengyi AFT05MS031NR1 AFT05MS031GNR1 RF Device Data Freescale Semiconductor, Inc. 15 AFT05MS031NR1 AFT05MS031GNR1 16 RF Device Data Freescale Semiconductor, Inc. RF INPUT Z1 C1 Z2 L1 C2 Z4 L2 C3 Z6 L3 Z7 C4 Z8 C5 Z9 Z13 Z14 C6 Z10 Z11 C16 Z12 R1 B1 Z15 C7 Z16 Z17 C8 Z19 Z20 Z21 L4 B2 Z18 C9 Z22 C13 0.240″ × 0.180″ Microstrip 0.034″ × 0.149″ Microstrip 0.034″ × 0.084″ Microstrip 0.240″ × 0.054″ Microstrip 0.240″ × 0.170″ Microstrip 0.240″ × 0.044″ Microstrip 0.034″ × 0.057″ Microstrip 0.034″ × 0.176″ Microstrip Z12 Z13, Z17 Z14 Z15 Z16 Z19 Z20 Z22 0.034″ × 0.200″ Microstrip 0.034″ × 0.128″ Microstrip 0.034″ × 0.054″ Microstrip 0.034″ × 0.202″ Microstrip 0.034″ × 0.160″ Microstrip 0.034″ × 0.010″ Microstrip 0.034″ × 0.115″ Microstrip 0.034″ × 0.150″ Microstrip Z2 Z3 Z4 Z5* Z6* Z7, Z21 Z8 Z10 Description 0.240″ × 0.010″ Microstrip Microstrip Z11 Description Z1, Z9, Z29 0.034″ × 0.060″ Microstrip Microstrip L5 Z23 C18 C10 Z24 L6 0.034″ × 0.184″ Microstrip 0.034″ × 0.188″ Microstrip 0.034″ × 0.022″ Microstrip 0.034″ × 0.177″ Microstrip 0.034″ × 0.018″ Microstrip 0.034″ × 0.295″ Microstrip* 0.034″ × 0.118″ Microstrip* Z25 * Line length includes microstrip bends Z18 Z28 Z27 Z26 Z25 Z24* Z23* Microstrip Description Figure 18. AFT05MS031NR1 UHF Wideband Reference Circuit Schematic — 450--520 MHz Z5 C19 C14 Table 15. AFT05MS031NR1 UHF Wideband Reference Circuit Microstrips — 450--520 MHz Z3 VGS C15 VDS C11 Z26 L7 Z27 C12 C17 Z28 Z29 RF OUTPUT TYPICAL CHARACTERISTICS — 450--520 MHz UHF WIDEBAND REFERENCE CIRCUIT 18 ηD 68 66 64 17.4 Gps 17.2 62 60 17 16.8 30 Pout 16.6 29 16.4 28 16.2 27 16 440 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 17.6 70 VDD = 12.5 Vdc, Pin = 0.5 W (Avg.) IDQ = 100 mA 450 460 470 480 490 500 510 520 26 530 Pout, OUTPUT POWER (WATTS) 17.8 f, FREQUENCY (MHz) 73 71 VDD = 13.6 Vdc, Pin = 0.5 W (Avg.) IDQ = 100 mA 69 67 65 Gps 18 17.75 ηD 17.5 17.25 17 Pout 16.75 16.5 16.25 16 440 63 61 36 34 32 30 28 450 460 470 480 490 500 510 520 26 530 ηD, DRAIN EFFICIENCY (%) 19 18.75 18.5 18.25 Pout, OUTPUT POWER (WATTS) Gps, POWER GAIN (dB) Figure 19. Power Gain, Drain Efficiency and Output Power versus Frequency at a Constant Input Power — 12.5 V f, FREQUENCY (MHz) Figure 20. Power Gain, Drain Efficiency and Output Power versus Frequency at a Constant Input Power — 13.6 V AFT05MS031NR1 AFT05MS031GNR1 RF Device Data Freescale Semiconductor, Inc. 17 TYPICAL CHARACTERISTICS — 450--520 MHz UHF WIDEBAND REFERENCE CIRCUIT 25 VDD = 13.6 Vdc, Pin = 0.5 W 50 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) 60 VDD = 13.6 Vdc, Pin = 0.25 W VDD = 12.5 Vdc, Pin = 0.5 W 40 30 VDD = 12.5 Vdc, Pin = 0.25 W 20 f = 490 MHz 10 0 1 2 3 4 15 VDD = 12.5 Vdc, Pin = 0.5 W VDD = 12.5 Vdc, Pin = 0.25 W 5 f = 490 MHz 0 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE--SOURCE VOLTAGE (VOLTS) 6 5 VDD = 13.6 Vdc, Pin = 0.25 W 10 0 Detail A 0 20 VDD = 13.6 Vdc, Pin = 0.5 W Detail A VGS, GATE--SOURCE VOLTAGE (VOLTS) Figure 21. Output Power versus Gate--Source Voltage 18 490 MHz ηD 450 MHz 490 MHz 40 520 MHz 520 MHz 14 Pout 12 0.01 60 450 MHz VDD = 13.6 Vdc, IDQ = 100 mA 0.1 1 20 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) Gps 16 80 520 MHz 490 MHz 450 MHz Pout, OUTPUT POWER (WATTS) 20 0 3 Pin, INPUT POWER (WATTS) Figure 22. Power Gain, Output Power and Drain Efficiency versus Input Power and Frequency AFT05MS031NR1 AFT05MS031GNR1 18 RF Device Data Freescale Semiconductor, Inc. 450--520 MHz UHF WIDEBAND REFERENCE CIRCUIT f = 520 MHz Zo = 5 Ω f = 450 MHz Zsource f = 520 MHz f = 450 MHz Zload VDD = 13.6 Vdc, IDQ = 100 mA, Pout = 31 W Avg. f MHz Zsource Ω Zload Ω 450 1.37 + j1.64 2.57 -- j1.01 460 1.43 + j1.72 2.49 -- j1.03 470 1.47 + j1.79 2.38 -- j1.03 480 1.49 + j1.83 2.26 -- j1.01 490 1.47 + j1.86 2.11 -- j0.95 500 1.41 + j1.89 1.97 -- j0.87 510 1.32 + j1.93 1.82 -- j0.76 520 1.20 + j1.99 1.68 -- j0.62 Zsource = Test circuit impedance as measured from gate to ground. Zload 50 Ω = Test circuit impedance as measured from drain to ground. Input Matching Network Output Matching Network Device Under Test Zsource 50 Ω Zload Figure 23. UHF Wideband Series Equivalent Source and Load Impedance — 450--520 MHz AFT05MS031NR1 AFT05MS031GNR1 RF Device Data Freescale Semiconductor, Inc. 19 PACKAGE DIMENSIONS AFT05MS031NR1 AFT05MS031GNR1 20 RF Device Data Freescale Semiconductor, Inc. AFT05MS031NR1 AFT05MS031GNR1 RF Device Data Freescale Semiconductor, Inc. 21 AFT05MS031NR1 AFT05MS031GNR1 22 RF Device Data Freescale Semiconductor, Inc. AFT05MS031NR1 AFT05MS031GNR1 RF Device Data Freescale Semiconductor, Inc. 23 AFT05MS031NR1 AFT05MS031GNR1 24 RF Device Data Freescale Semiconductor, Inc. AFT05MS031NR1 AFT05MS031GNR1 RF Device Data Freescale Semiconductor, Inc. 25 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following documents, software and tools to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages • AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model • .s2p File Development Tools • Printed Circuit Boards For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 June 2012 Description • Initial Release of Data Sheet AFT05MS031NR1 AFT05MS031GNR1 26 RF Device Data Freescale Semiconductor, Inc. How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. 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Freescale, the Freescale logo, AltiVec, C--5, CodeTest, CodeWarrior, ColdFire, C--Ware, Energy Efficient Solutions logo, Kinetis, mobileGT, PowerQUICC, Processor Expert, QorIQ, Qorivva, StarCore, Symphony, and VortiQa are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. Airfast, BeeKit, BeeStack, ColdFire+, CoreNet, Flexis, MagniV, MXC, Platform in a Package, QorIQ Qonverge, QUICC Engine, Ready Play, SafeAssure, SMARTMOS, TurboLink, Vybrid, and Xtrinsic are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. E 2012 Freescale Semiconductor, Inc. AFT05MS031NR1 AFT05MS031GNR1 Document RF DeviceNumber: Data AFT05MS031N Rev. 0, 6/2012 Freescale Semiconductor, Inc. 27