Freescale Semiconductor Technical Data Document Number: A2T18H455W23N Rev. 0, 5/2016 RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET A2T18H455W23NR6 This 87 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz. 1800 MHz Typical Doherty Single--Carrier W--CDMA Performance: VDD = 31.5 Vdc, IDQA = 1080 mA, VGSB = 0.25 Vdc, Pout = 87 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) D (%) Output PAR (dB) 1805 MHz 14.5 48.1 8.1 –32.7 1840 MHz 15.2 48.2 8.1 –33.0 1880 MHz 15.9 48.4 8.0 –33.8 1805–1880 MHz, 87 W AVG., 31.5 V AIRFAST RF POWER LDMOS TRANSISTOR ACPR (dBc) OM--1230--4L2S PLASTIC Features Advanced High Performance In--Package Doherty High Thermal Conductivity Packaging Technology for Reduced Thermal Resistance Designed for Wide Instantaneous Bandwidth Applications Greater Negative Gate--Source Voltage Range for Improved Class C Operation Able to Withstand Extremely High Output VSWR and Broadband Operating Conditions Designed for Digital Predistortion Error Correction Systems 6 VBWA(2) Carrier 5 RFoutA/VDSA RFinA/VGSA 1 (1) RFinB/VGSB 2 4 RFoutB/VDSB Peaking 3 VBWB(2) (Top View) Note: Exposed backside of the package is the source terminal for the transistors. Figure 1. Pin Connections 1. Pin connections 4 and 5 are DC coupled and RF independent. 2. Device cannot operate with VDD current supplied through pin 3 and pin 6. Freescale Semiconductor, Inc., 2016. All rights reserved. RF Device Data Freescale Semiconductor, Inc. A2T18H455W23NR6 1 Table 1. Maximum Ratings Symbol Value Unit Drain--Source Voltage Rating VDSS –0.5, +65 Vdc Gate--Source Voltage VGS –6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg –65 to +150 C Case Operating Temperature Range TC –40 to +125 C TJ –40 to +225 C Operating Junction Temperature Range (1,2) Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 77C, 87 W Avg., W--CDMA, 31.5 Vdc, IDQA = 1080 mA, VGSB = 0.25 Vdc, 1840 MHz Symbol Value (2,3) Unit RJC 0.23 C/W Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 Machine Model (per EIA/JESD22--A115) B Charge Device Model (per JESD22--C101) IV Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 C Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 32 Vdc, VGS = 0 Vdc) IDSS — — 5 Adc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 Adc) VGS(th) 1.05 1.2 2.2 Vdc Gate Quiescent Voltage (VDD = 31.5 Vdc, IDA = 1080 mAdc, Measured in Functional Test) VGSA(Q) 2.1 2.5 2.9 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 2.0 Adc) VDS(on) 0.05 0.15 0.3 Vdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 Adc) VGS(th) 0.8 1.2 1.6 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 3 Adc) VDS(on) 0.05 0.15 0.3 Vdc Characteristic Off Characteristics (4) On Characteristics -- Side A, Carrier On Characteristics -- Side B, Peaking 1. 2. 3. 4. Continuous use at maximum temperature will affect MTTF. MTTF calculator available at http://www.nxp.com/RF/calculators. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955. Each side of device measured separately. (continued) A2T18H455W23NR6 2 RF Device Data Freescale Semiconductor, Inc. Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests — 1805 MHz (1,2,3) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 31.5 Vdc, IDQA = 1080 mA, VGSB = 0.25 Vdc, Pout = 87 W Avg., f = 1805 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Gps 14.0 14.5 17.0 dB Drain Efficiency D 43.0 48.1 — % PAR 7.3 8.1 — dB ACPR — –32.7 –29.0 dBc Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio (1,2,3) Functional Tests — 1880 MHz (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 31.5 Vdc, IDQA = 1080 mA, VGSB = 0.25 Vdc, Pout = 87 W Avg., f = 1880 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Gps 14.0 15.9 17.0 dB Drain Efficiency D 43.0 48.4 — % PAR 7.3 8.0 — dB ACPR — –33.8 –29.0 dBc Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Load Mismatch (3) (In Freescale Doherty Test Fixture, 50 ohm system) IDQA = 1080 mA, VGSB = 0.25 Vdc, f = 1840 MHz VSWR 10:1 at 32 Vdc, 575 W CW Output Power (3 dB Input Overdrive from 417 W CW Rated Power) No Device Degradation Typical Performance (3) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 31.5 Vdc, IDQA = 1080 mA, VGSB = 0.25, 1805–1880 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB — (4) 436 — W P3dB AM/PM (Maximum value measured at the P3dB compression point across the 1805–1880 MHz frequency range) — 589 — W — –21 — VBWres — 140 — MHz Gain Flatness in 75 MHz Bandwidth @ Pout = 87 W Avg. GF — 1.4 — dB Gain Variation over Temperature (–30C to +85C) G — 0.012 — dB/C P1dB — 0.007 — dB/C Pout @ 3 dB Compression Point VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Output Power Variation over Temperature (–30C to +85C) Table 6. Ordering Information Device Tape and Reel Information A2T18H455W23NR6 R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel 1. 2. 3. 4. Package OM--1230--4L2S VDDA and VDDB must be tied together and powered by a single DC power supply. Part internally matched both on input and output. Measurements made with device in an asymmetrical Doherty configuration. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF. A2T18H455W23NR6 RF Device Data Freescale Semiconductor, Inc. 3 VGGA C13 A2T18H455W23N Rev. 3 VDDA C30 C31 C27 C11 R1 C18 C16 C15 C24 C34 C26 C1 C6 C5 R3 Z1 C10 C4 C9 C7 CUT OUT AREA C21 C22 C P C23 C8 C17 C19 R2 C28 C25 C2 C3 C12 C20 C29 C32 D76804 VGGB C35 C33 C14 VDDB Note: VDDA and VDDB must be tied together and powered by a single DC power supply. Figure 1. A2T18H455W23NR6 Test Circuit Component Layout Table 7. A2T18H455W23NR6 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2, C3, C4, C5, C15, C16, C17, C18 10 pF Chip Capacitors GQM2195C2E100JB12D Murata C6 1 pF Chip Capacitor GQM2195C2E1R0BB12D Murata C7 2.4 pF Chip Capacitor GQM2195C2E2R4BB12D Murata C8 0.7 pF Chip Capacitor GQM2195C2ER70BB12D Murata C9 1.3 pF Chip Capacitor GQM2195C2E1R3BB12D Murata C10 0.2 pF Chip Capacitor 800B0R2BT500XT ATC C11, C12, C24, C25, C26, C27, C28, C29 10 F Chip Capacitors GRM32ER61H106KA12L Murata C13, C14, C30, C31, C32, C33 10 F Chip Capacitors C5750X7S2A106M230KE TDK C19, C20 10 pF Chip Capacitors ATC800B100JT500XT ATC C21 0.3 pF Chip Capacitor ATC800B0R3BT500XT ATC C22 6.8 pF Chip Capacitor ATC800B6R8BT500XT ATC C23 8.2 pF Chip Capacitor ATC800B8R2BT500XT ATC C34, C35 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26 Multicomp R1, R2 3.3 , 1/8 W Chip Resistors WCR0805-3R3FI Welwyn R3 50 , 10 W Termination 060120A25X50-2 Anaren Z1 1800–2200 MHz Band, 90, 2 dB Doherty Coupler X3C20F1-02S Anaren PCB Rogers RO4350B, 0.020, r = 3.66 D76804 MTL A2T18H455W23NR6 4 RF Device Data Freescale Semiconductor, Inc. Gps, POWER GAIN (dB) 17 16.5 D Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 16 15 47 PARC 14.5 14 13 1760 1780 1800 1820 1840 1860 –26 –1.7 –28 –1.8 –30 –32 ACPR 13.5 49 48 Gps 15.5 50 1880 1900 –34 –36 1920 –1.9 –2 –2.1 PARC (dB) 51 VDD = 31.5 Vdc, Pout = 87 W (Avg.), IDQA = 1080 mA, VGSB = 0.25 Vdc Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth 17.5 ACPR (dBc) 18 D, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS — 1805–1880 MHz –2.2 f, FREQUENCY (MHz) IMD, INTERMODULATION DISTORTION (dBc) Figure 2. Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 87 Watts Avg. 0 VDD = 31.5 Vdc, Pout = 31 W (PEP), IDQA = 1080 mA VGSB = 0.25 Vdc, Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 1840 MHz –15 IM3--U –30 IM5--L –45 IM5--U IM7--L –60 –75 IM3--L IM7--U 10 1 300 100 TWO--TONE SPACING (MHz) 16 0 15.5 15 14.5 14 13.5 VDD = 31.5 Vdc, IDQA = 1080 mA, VGSB = 0.25 Vdc, f = 1840 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth –1 dB = 64 W –30 55 –31 D –1 ACPR Gps 50 45 –2 –2 dB = 92 W –3 40 –3 dB = 119 W –4 –5 60 PARC 60 90 120 150 –33 –34 35 –35 30 –36 Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 30 –32 180 ACPR (dBc) 1 D DRAIN EFFICIENCY (%) 16.5 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) Figure 3. Intermodulation Distortion Products versus Two--Tone Spacing Pout, OUTPUT POWER (WATTS) Figure 4. Output Peak--to--Average Ratio Compression (PARC) versus Output Power A2T18H455W23NR6 RF Device Data Freescale Semiconductor, Inc. 5 TYPICAL CHARACTERISTICS — 1805–1880 MHz 14 1805 MHz 13 12 D 1880 MHz 50 –20 40 30 10 1840 MHz 1805 MHz 1 –10 20 1805 MHz ACPR 60 10 0 500 100 –30 –40 –50 ACPR (dBc) VDD = 31.5 Vdc, IDQA = 1080 mA, VGSB = 0.25 Vdc 1880 MHz Single--Carrier W--CDMA, 3.84 MHz 17 Channel Bandwidth Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 1840 MHz 16 Gps 1840 MHz 15 1880 MHz D, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 18 –60 –70 Pout, OUTPUT POWER (WATTS) AVG. Figure 5. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 17 16 GAIN (dB) 15 VDD = 31.5 Vdc Pin = 0 dBm IDQA = 1080 mA VGSB = 0.25 Vdc Gain 14 13 12 11 1700 1750 1800 1850 1900 1950 2000 2050 2100 f, FREQUENCY (MHz) Figure 6. Broadband Frequency Response A2T18H455W23NR6 6 RF Device Data Freescale Semiconductor, Inc. Table 8. Carrier Side Load Pull Performance — Maximum Power Tuning VDD = 31.5 Vdc, IDQA = 758 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Output Power P1dB f (MHz) Zsource () Zin () 1800 1.95 – j6.68 2.39 + j6.81 1840 2.49 – j7.21 3.13 + j7.24 1880 3.51 – j8.21 4.17 + j7.60 Zload () (1) Gain (dB) (dBm) (W) D (%) AM/PM () 1.02 – j2.85 17.3 52.6 184 53.9 –14 0.88 – j3.16 16.9 52.7 185 50.5 –14 0.84 – j3.24 17.2 52.6 183 50.3 –16 Max Output Power P3dB f (MHz) Zsource () Zin () Zload (2) () Gain (dB) (dBm) (W) D (%) AM/PM () 1800 1.95 – j6.68 2.26 + j7.13 0.96 – j3.04 14.9 53.4 218 53.0 –19 1840 2.49 – j7.21 2.98 + j7.75 0.88 – j3.24 14.8 53.4 219 51.4 –20 1880 3.51 – j8.21 4.21 + j8.41 0.84 – j3.36 15.0 53.3 214 50.4 –21 (1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Table 9. Carrier Side Load Pull Performance — Maximum Drain Efficiency Tuning VDD = 31.5 Vdc, IDQA = 758 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Drain Efficiency P1dB f (MHz) Zsource () Zin () Zload (1) () Gain (dB) (dBm) (W) D (%) AM/PM () 1800 1.95 – j6.68 2.33 + j7.08 2.57 – j1.37 20.3 49.8 96 66.7 –22 1840 2.49 – j7.21 3.15 + j7.49 2.25 – j1.61 20.2 49.9 97 65.2 –22 1880 3.51 – j8.21 3.93 + j6.87 1.87 – j2.06 20.1 50.2 106 62.9 –24 Max Drain Efficiency P3dB Gain (dB) (dBm) (W) D (%) AM/PM () 2.51 – j1.37 18.3 50.5 112 66.1 –30 3.04 + j7.85 1.93 – j1.94 17.9 51.2 132 65.0 –28 3.86 + j7.31 1.82 – j2.29 17.9 51.3 135 62.3 –31 f (MHz) Zsource () Zin () 1800 1.95 – j6.68 2.29 + j7.35 1840 2.49 – j7.21 1880 3.51 – j8.21 Zload () (2) (1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Input Load Pull Tuner and Test Circuit Output Load Pull Tuner and Test Circuit Device Under Test Zsource Zin Zload A2T18H455W23NR6 RF Device Data Freescale Semiconductor, Inc. 7 Table 10. Peaking Side Load Pull Performance — Maximum Power Tuning VDD = 31.5 Vdc, VGSB = 0 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Output Power P1dB f (MHz) Zsource () Zin () 1800 0.99 – j5.23 0.91 + j5.01 1840 1.13 – j5.22 1.04 + j5.21 1880 1.24 – j5.77 1.24 + j5.52 Zload () (1) Gain (dB) (dBm) (W) D (%) AM/PM () 1.00 – j2.79 12.9 54.9 309 49.8 –27 0.98 – j2.99 13.4 54.9 307 49.6 –28 0.98 – j3.11 13.5 54.9 312 50.1 –33 Max Output Power P3dB f (MHz) Zsource () Zin () Zload (2) () Gain (dB) (dBm) (W) D (%) AM/PM () 1800 0.99 – j5.23 0.90 + j5.14 1.04 – j2.95 10.8 55.6 365 52.8 –34 1840 1.13 – j5.22 1.05 + j5.37 1.03 – j3.11 11.3 55.6 363 52.6 –35 1880 1.24 – j5.77 1.27 + j5.73 1.03 – j3.24 11.5 55.6 366 52.7 –40 (1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Table 11. Peaking Side Load Pull Performance — Maximum Drain Efficiency Tuning VDD = 31.5 Vdc, VGSB = 0 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Drain Efficiency P1dB f (MHz) Zsource () Zin () Zload (1) () Gain (dB) (dBm) (W) D (%) AM/PM () 1800 0.99 – j5.23 0.83 + j5.01 2.93 – j2.55 14.2 53.5 223 62.9 –34 1840 1.13 – j5.22 0.92 + j5.19 2.66 – j2.09 14.8 53.3 212 62.9 –36 1880 1.24 – j5.77 1.10 + j5.49 2.13 – j2.13 14.8 53.5 226 63.1 –39 Max Drain Efficiency P3dB Gain (dB) (dBm) (W) D (%) AM/PM () 2.93 – j2.72 12.2 54.0 252 61.8 –43 0.95 + j5.35 2.72 – j2.18 12.7 53.8 239 61.9 –46 1.15 + j5.70 2.37 – j2.18 12.8 53.9 247 62.5 –50 f (MHz) Zsource () Zin () 1800 0.99 – j5.23 0.84 + j5.13 1840 1.13 – j5.22 1880 1.24 – j5.77 Zload () (2) (1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Input Load Pull Tuner and Test Circuit Output Load Pull Tuner and Test Circuit Device Under Test Zsource Zin Zload A2T18H455W23NR6 8 RF Device Data Freescale Semiconductor, Inc. P1dB -- TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 1840 MHz 0 0 E --2 --3 P 51 52 51.5 --4 50.5 50 --5 --6 --1 48.5 IMAGINARY () IMAGINARY () --1 49.5 1 2 64 --3 3 REAL () 4 5 --6 6 56 58 PP 54 52 50 1 0 2 3 REAL () 4 5 6 Figure 8. P1dB Load Pull Ffficiency Contours (%) 0 0 --26 --24 20.5 --1 --1 20 --2 E IMAGINARY () IMAGINARY () 60 --4 Figure 7. P1dB Load Pull Output Power Contours (dBm) 19.5 --3 19 P 18.5 --4 17 0 1 2 --18 --3 P --16 --4 --5 17.5 3 REAL () --20 E --2 --22 --14 18 --5 --6 62 --5 49 0 E E --2 --12 --10 4 5 6 Figure 9. P1dB Load Pull Gain Contours (dB) NOTE: --6 0 1 2 3 REAL () 4 5 6 Figure 10. P1dB Load Pull AM/PM Contours () P = Maximum Output Power E = Maximum Drain Efficiency Gain Drain Efficiency Linearity Output Power A2T18H455W23NR6 RF Device Data Freescale Semiconductor, Inc. 9 P3dB -- TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 1840 MHz 0 0 --1 --1 E --2 --3 P 53 --4 IMAGINARY () IMAGINARY () 50 52.5 52 51.5 51 --5 --6 50.5 50 2 1 0 3 REAL () 4 0 1 2 E 17.5 --3 17 P 16.5 --4 16 --5 15 0 1 3 REAL () 5 4 6 0 IMAGINARY () IMAGINARY () P --32 --30 --28 --1 --2 56 58 Figure 12. P3dB Load Pull Efficiency Contours (%) 18.5 18 60 --4 --6 6 5 --1 --6 --3 62 --5 49.5 Figure 11. P3dB Load Pull Output Power Contours (dBm) 0 64 52 54 E --2 2 --2 --24 E --3 --22 P --18 --20 --4 --16 --5 15.5 3 REAL () --26 4 6 5 Figure 13. P3dB Load Pull Gain Contours (dB) NOTE: --6 0 1 2 3 REAL () 4 5 6 Figure 14. P3dB Load Pull AM/PM Contours () P = Maximum Output Power E = Maximum Drain Efficiency Gain Drain Efficiency Linearity Output Power A2T18H455W23NR6 10 RF Device Data Freescale Semiconductor, Inc. 0 0 --1 --1 --2 E --3 P 53.5 54 --4 53 52 52.5 --5 --6 IMAGINARY () IMAGINARY () P1dB -- TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 1840 MHz 1 2 3 REAL () 4 5 58 0 --1 --1 E 14.5 P 14 --4 54 --6 11 11.5 0 1 12 12.5 2 4 5 6 Figure 17. P1dB Load Pull Gain Contours (dB) NOTE: 50 46 0 1 2 3 REAL () 4 6 5 --40 --2 E --3 P --28 --32 --26 --4 --6 --30 --38 --36 --34 --24 --5 13 3 REAL () 52 48 13.5 --5 56 Figure 16. P1dB Load Pull Ffficiency Contours (%) 0 --3 60 P --4 --6 6 IMAGINARY () IMAGINARY () --3 51 Figure 15. P1dB Load Pull Output Power Contours (dBm) --2 E 62 --5 51.5 0 --2 0 1 2 3 REAL () 4 5 6 Figure 18. P1dB Load Pull AM/PM Contours () P = Maximum Output Power E = Maximum Drain Efficiency Gain Drain Efficiency Linearity Output Power A2T18H455W23NR6 RF Device Data Freescale Semiconductor, Inc. 11 P3dB -- TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 1840 MHz 0 --1 0 51.5 52 --1 E --3 P 55 54.5 --4 54 53.5 --5 52 --6 IMAGINARY () IMAGINARY () 60 --2 0 1 2 4 5 --1 --1 P E 12 --4 11.5 --5 9 --6 IMAGINARY () 0 --3 0 10 10.5 9.5 1 2 56 54 52 1 2 48 3 REAL () 4 --2 E 5 6 Figure 21. P3dB Load Pull Gain Contours (dB) NOTE: 6 --48 --46 --44 --3 P --42 --40 --4 --38 --36 4 5 --50 --5 11 3 REAL () 0 50 Figure 20. P3dB Load Pull Ffficiency Contours (%) 0 12.5 P --4 --6 6 Figure 19. P3dB Load Pull Output Power Contours (dBm) IMAGINARY () --3 58 46 3 REAL () --2 E --5 53 52.5 --2 --6 0 1 2 3 REAL () --34 4 5 6 Figure 22. P3dB Load Pull AM/PM Contours () P = Maximum Output Power E = Maximum Drain Efficiency Gain Drain Efficiency Linearity Output Power A2T18H455W23NR6 12 RF Device Data Freescale Semiconductor, Inc. PACKAGE DIMENSIONS A2T18H455W23NR6 RF Device Data Freescale Semiconductor, Inc. 13 A2T18H455W23NR6 14 RF Device Data Freescale Semiconductor, Inc. A2T18H455W23NR6 RF Device Data Freescale Semiconductor, Inc. 15 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator .s2p File Development Tools Printed Circuit Boards To Download Resources Specific to a Given Part Number: 1. Go to http://www.nxp.com/RF 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 May 2016 Description Initial Release of Data Sheet A2T18H455W23NR6 16 RF Device Data Freescale Semiconductor, Inc. How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/SalesTermsandConditions. Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. Airfast is a trademark of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. E 2016 Freescale Semiconductor, Inc. A2T18H455W23NR6 Document RF DeviceNumber: Data A2T18H455W23N Rev. 0, 5/2016 Freescale Semiconductor, Inc. 17