Freescale Semiconductor Technical Data Document Number: MMRF1306H Rev. 1, 8/2014 RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR CW or pulse applications, such as HF, VHF, and low--band UHF radar and high power radio communications. They are unmatched input and output designs allowing wide frequency utilization from 1.8 to 600 MHz. Typical Performance: VDD = 50 Vdc, IDQ = 100 mA Pout (W) f (MHz) Gps (dB) D (%) Pulse (100 sec, 20% Duty Cycle) 1250 Peak 230 24.0 74.0 CW 1250 CW 230 22.9 74.6 Signal Type MMRF1306HR5 MMRF1306HSR5 1.8–600 MHz, 1250 W CW, 50 V WIDEBAND RF POWER LDMOS TRANSISTORS Application Circuits (1) — Typical Performance Frequency (MHz) Signal Type Pout (W) Gps (dB) D (%) 27 CW 1300 27 81 40 CW 1300 26 85 81.36 CW 1250 27 84 87.5--108 CW 1100 24 80 144--148 CW 1250 26 78 170--230 DVB--T 225 25 30 352 Pulse (200 sec, 20% Duty Cycle) 1250 21.5 66 352 CW 1150 20.5 68 500 CW 1000 18 58 NI--1230H--4S MMRF1306HR5 NI--1230S--4S MMRF1306HSR5 1. Contact your local Freescale sales office for additional information on specific circuit designs. Load Mismatch/Ruggedness Frequency (MHz) 230 Signal Type VSWR Pulse (100 sec, 20% Duty Cycle) >65:1 at all Phase Angles Pout (W) Test Voltage 1500 Peak (3 dB Overdrive) 50 Gate A 3 1 Drain A Gate B 4 2 Drain B Result No Device Degradation Features Unmatched Input and Output Allowing Wide Frequency Range Utilization Device can be used Single--Ended or in a Push--Pull Configuration Qualified Up to a Maximum of 50 VDD Operation Characterized from 30 V to 50 V for Extended Power Range Suitable for Linear Application with Appropriate Biasing Integrated ESD Protection with Greater Negative Gate--Source Voltage Range for Improved Class C Operation Characterized with Series Equivalent Large--Signal Impedance Parameters (Top View) Note: The backside of the package is the source terminal for the transistors. Figure 1. Pin Connections In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel. Freescale Semiconductor, Inc., 2013–2014. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MMRF1306HR5 MMRF1306HSR5 1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +133 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Storage Temperature Range Tstg -- 65 to +150 C Case Operating Temperature TC 150 C Total Device Dissipation @ TC = 25C Derate above 25C PD 1333 6.67 W W/C Operating Junction Temperature (1) TJ 225 C Symbol Value (2) Unit Thermal Resistance, Junction to Case CW: Case Temperature 63C, 1250 W CW, IDQ = 100 mA, 230 MHz RJC 0.15 C/W Thermal Impedance, Junction to Case Pulse: Case Temperature 66C, 1250 W Pulse, 100 sec Pulse Width, 20% Duty Cycle, IDQ = 100 mA, 230 MHz ZJC 0.027 C/W Table 2. Thermal Characteristics Characteristic Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2, passes 3500 V Machine Model (per EIA/JESD22--A115) B, passes 250 V Charge Device Model (per JESD22--C101) IV, passes 4000 V Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit IGSS — — 1 Adc 133 — — Vdc Off Characteristics (3) Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain--Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 mA) V(BR)DSS Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) IDSS — — 20 Adc Gate Threshold Voltage (3) (VDS = 10 Vdc, ID = 1776 Adc) VGS(th) 1.7 2.2 2.7 Vdc Gate Quiescent Voltage (VDD = 50 Vdc, ID = 100 mAdc, Measured in Functional Test) VGS(Q) 1.9 2.2 2.9 Vdc Drain--Source On--Voltage (3) (VGS = 10 Vdc, ID = 2 Adc) VDS(on) — 0.15 — Vdc Forward Transconductance (VDS = 10 Vdc, ID = 30 Adc) gfs — 28.0 — S Reverse Transfer Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 2.8 — pF Output Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 185 — pF Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Ciss — 562 — pF On Characteristics Dynamic Characteristics (3) 1. Continuous use at maximum temperature will affect MTTF. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 3. Each side of device measured separately. (continued) MMRF1306HR5 MMRF1306HSR5 2 RF Device Data Freescale Semiconductor, Inc. Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 100 mA, Pout = 1250 W Peak (250 W Avg.), f = 230 MHz, 100 sec Pulse Width, 20% Duty Cycle Gps 23.0 24.0 Drain Efficiency D 72.5 74.0 — % Input Return Loss IRL — --14 --10 dB Power Gain 26.0 dB Table 5. Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system) IDQ = 100 mA Frequency (MHz) 230 Signal Type VSWR Pout (W) Pulse (100 sec, 20% Duty Cycle) >65:1 at all Phase Angles 1500 Peak (3 dB Overdrive) Test Voltage, VDD Result 50 No Device Degradation MMRF1306HR5 MMRF1306HSR5 RF Device Data Freescale Semiconductor, Inc. 3 -- C22 C13 C11 C12 -- C10 C23 C24 C21 COAX1 COAX3 R1 L3 C16 C3 L2 R2 COAX2 C17 C15 C14 C5 CUT OUT AREA C1 C2 C4 L1 C18 C20 C19 L4 COAX4 C25 C6 C7 C8 C9 C26 -- C27 -- C28 Figure 2. MMRF1306HR5(HSR5) 230 MHz Production Test Circuit Component Layout — Pulse Table 6. MMRF1306HR5(HSR5) 230 MHz Production Test Circuit Component Designations and Values — Pulse Part Description Part Number Manufacturer C1 20 pF Chip Capacitor ATC100B200JT500XT ATC C2, C3, C5 27 pF Chip Capacitors ATC100B270JT500XT ATC C4 0.8--8.0 pF Variable Capacitor, Gigatrim 27291SL Johanson C6, C10 22 F, 35 V Tantalum Capacitors T491X226K035AT Kemet C7, C11 0.1 F Chip Capacitors CDR33BX104AKYS AVX C8, C12 220 nF Chip Capacitors C1812C224K5RACTU Kemet C9, C13, C21, C25 1000 pF Chip Capacitors ATC100B102JT50XT ATC C14 43 pF Chip Capacitor ATC100B430JT500XT ATC C15 75 pF Metal Mica MIN02--002EC750J--F CDE C16, C17, C18, C19 240 pF Chip Capacitors ATC100B241JT200XT ATC C20 6.2 pF Chip Capacitor ATC100B6R2BT500XT ATC C22, C23, C24, C26, C27, C28 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp Coax1, 2, 3, 4 25 Semi Rigid Coax, 2.2 Shield Length UT--141C--25 Micro--Coax L1, L2 5 nH Inductors A02TKLC Coilcraft L3, L4 6.6 nH Inductors GA3093--ALC Coilcraft R1, R2 10 Chip Resistors CRCW120610R0JNEA Vishay PCB 0.030, r = 2.55 AD255A Arlon MMRF1306HR5 MMRF1306HSR5 4 RF Device Data Freescale Semiconductor, Inc. RF INPUT RF Device Data Freescale Semiconductor, Inc. C1 Z2 VBIAS C3 Z6 Z10 Z8 + C6 C8 C5 C4 C7 Z9 Z7 C12 C9 L2 L1 C13 R2 Z12 Z14 Z13 Z11 R1 DUT Z16 Z15 L4 Z20 Z18 Z22 C14 Z21 Z17 Z19 L3 C25 Z24 Z23 C21 Z26 C15 Z25 + C26 0.175 0.082 Microstrip 0.170 0.100 Microstrip 0.116 0.285 Microstrip 0.116 0.285 Microstrip 0.108 0.285 Microstrip Z2 Z3, Z4 Z5, Z6 Z7, Z8 Z9, Z10 Description 0.192 0.082 Microstrip Z1 Microstrip C19 C18 C17 C16 C27 Z28 Z27 C24 C23 C22 + C28 VSUPPLY Microstrip Z21, Z22 Z19*, Z20* Z17*, Z18* Z15, Z16 Z13, Z14 Z11*, Z12* Description 0.104 0.507 Microstrip 0.187 0.154 Microstrip 0.466 0.363 Microstrip 0.371 0.507 Microstrip 0.412 0.726 Microstrip 0.872 0.058 Microstrip Microstrip Description 0.179 0.082 Microstrip 0.186 0.082 Microstrip 0.116 0.300 Microstrip 0.127 0.300 Microstrip 1.251 0.300 Microstrip Z29 * Line length includes microstrip bends Z30 Z29 Z27, Z28 Z25, Z26 Z23, Z24 COAX4 COAX3 VSUPPLY Figure 3. MMRF1306HR5(HSR5) 230 MHz Production Test Circuit Schematic — Pulse COAX2 Z4 C2 Z5 C11 + Z3 C10 + + Table 7. MMRF1306HR5(HSR5) 230 MHz Production Test Circuit Microstrips — Pulse Z1 COAX1 VBIAS + MMRF1306HR5 MMRF1306HSR5 5 C20 RF Z30 OUTPUT TYPICAL CHARACTERISTICS 66 2000 Ciss Pout, OUTPUT POWER (dBm) PULSED C, CAPACITANCE (pF) 1000 Coss 100 10 Crss 1 Measured with 30 mV(rms)ac @ 1 MHz VGS = 0 Vdc 0 10 20 30 P2dB = 61.7 dBm (1472 W) 64 63 P1dB = 61.3 dBm (1333 W) 62 Actual 61 VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz Pulse Width = 100 sec, 20% Duty Cycle 60 59 35 50 40 Ideal P3dB = 61.9 dBm (1553 W) 65 36 37 38 39 40 41 42 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Pin, INPUT POWER (dBm) PEAK Note: Each side of device measured separately. Figure 5. Output Power versus Input Power Figure 4. Capacitance versus Drain--Source Voltage 80 70 23 60 Gps 22 50 21 40 24 Gps, POWER GAIN (dB) 24 35 V VDD = 30 V 0 200 400 600 800 1000 1200 1400 1600 Pout, OUTPUT POWER (WATTS) PEAK Figure 6. Power Gain and Drain Efficiency versus Output Power Figure 7. Power Gain versus Output Power 26 35 V VDD = 30 V 40 V 45 V 50 V Gps, POWER GAIN (dB) 60 50 40 200 400 600 800 1000 1200 1400 24 23 25_C 1600 Pout, OUTPUT POWER (WATTS) PEAK Figure 8. Drain Efficiency versus Output Power 80 60 50 22 Gps 85_C 21 19 100 90 85_C 70 TC = --30_C 20 IDQ = 100 mA, f = 230 MHz Pulse Width = 100 sec, 20% Duty Cycle 30 --30_C 25_C 25 70 0 45 V 40 V 19 Pout, OUTPUT POWER (WATTS) PEAK 80 D, DRAIN EFFICIENCY (%) 20 16 90 20 50 V 21 17 30 2000 1000 23 22 18 D 20 100 IDQ = 100 mA, f = 230 MHz Pulse Width = 100 sec, 20% Duty Cycle 25 D, DRAIN EFFICIENCY (%) 25 Gps, POWER GAIN (dB) 26 90 VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz Pulse Width = 100 sec, 20% Duty Cycle D 40 VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz Pulse Width = 100 sec, 20% Duty Cycle 1000 D, DRAIN EFFICIENCY (%) 26 30 20 2000 Pout, OUTPUT POWER (WATTS) PEAK Figure 9. Power Gain and Drain Efficiency versus Output Power MMRF1306HR5 MMRF1306HSR5 6 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS 109 MTTF (HOURS) 108 107 106 105 104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 1250 W CW, and D = 74.6%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 10. MTTF versus Junction Temperature — CW VDD = 50 Vdc, IDQ = 100 mA, Pout = 1250 W Peak f MHz Zsource Zload 230 1.29 + j3.54 2.12 + j2.68 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload 50 Input Matching Network = Test circuit impedance as measured from drain to drain, balanced configuration. + -Zsource Device Under Test -- Output Matching Network 50 + Zload Figure 11. Series Equivalent Test Circuit Source and Load Impedance — 230 MHz Pulse MMRF1306HR5 MMRF1306HSR5 RF Device Data Freescale Semiconductor, Inc. 7 VDD = 50 Vdc, IDQ = 100 mA f (MHz) Zsource () Zload () 1.8 (1) 34.4 + j192.0 (1) 5.00 - j4.00 (1) 27 12.5 + j7.00 7.00 + j0.70 40 5.75 + j5.06 5.39 + j2.62 81.36 4.04 + j5.93 4.89 + j2.95 88 2.20 + j6.70 4.90 + j2.90 98 2.30 + j6.90 4.10 + j2.50 108 2.30 + j7.00 4.40 + j3.60 144 1.60 + j5.00 3.90 + j1.50 175 1.33 + j3.90 3.50 + j2.50 230 1.29 + j3.54 2.12 + j2.68 352 0.98 + j1.45 1.82 + j2.05 500 0.29 + j1.47 1.79 + j1.80 1. Simulated data. Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload 50 Input Matching Network = Test circuit impedance as measured from drain to drain, balanced configuration. + -Zsource Device Under Test -- Output Matching Network 50 + Zload Figure 12. Source and Load Impedances Optimized for IRL, Power and Efficiency — Push--Pull MMRF1306HR5 MMRF1306HSR5 8 RF Device Data Freescale Semiconductor, Inc. PACKAGE DIMENSIONS MMRF1306HR5 MMRF1306HSR5 RF Device Data Freescale Semiconductor, Inc. 9 MMRF1306HR5 MMRF1306HSR5 10 RF Device Data Freescale Semiconductor, Inc. MMRF1306HR5 MMRF1306HSR5 RF Device Data Freescale Semiconductor, Inc. 11 MMRF1306HR5 MMRF1306HSR5 12 RF Device Data Freescale Semiconductor, Inc. PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Dec. 2013 Initial Release of Data Sheet 1 Aug. 2014 Application circuit table added and band of operation updated to 1.8–600 MHz to reflect performance of device, p. 1 MMRF1306HR5 MMRF1306HSR5 RF Device Data Freescale Semiconductor, Inc. 13 How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. 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U.S. Pat. & Tm. Off. All other product or service names are the property of their respective owners. E 2013–2014 Freescale Semiconductor, Inc. MMRF1306HR5 MMRF1306HSR5 Document Number: MMRF1306H Rev. 1, 8/2014 14 RF Device Data Freescale Semiconductor, Inc.