Freescale Semiconductor Technical Data Document Number: MMRF1012N Rev. 0, 7/2014 RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET MMRF1012NR1 Designed primarily for CW large--signal output and driver applications with frequencies up to 450 MHz. Device is unmatched and is suitable for use in aerospace and defense applications. Typical CW Performance at 220 MHz: VDD = 50 Vdc, IDQ = 30 mA, Pout = 10 W Power Gain — 23.9 dB Drain Efficiency — 62% Capable of Handling 10:1 VSWR @ 50 Vdc, 220 MHz, 10 W CW Output Power 10--450 MHz, 10 W, 50 V BROADBAND RF POWER MOSFET Features Characterized with Series Equivalent Large--Signal Impedance Parameters Qualified Up to a Maximum of 50 VDD Operation Integrated ESD Protection 225C Capable Plastic Package In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13--inch Reel. TO--270--2 PLASTIC 1 Drain Gate 2 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +120 Vdc Gate--Source Voltage VGS --0.5, +10 Vdc (Top View) Note: Exposed backside of the package is the source terminal for the transistor. Storage Temperature Range Tstg -- 65 to +150 C Case Operating Temperature TC 150 C Operating Junction Temperature (1,2) TJ 225 C Figure 1. Pin Connections Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 81C, 10 W CW Symbol Value (2,3) Unit RJC 3.0 C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. Freescale Semiconductor, Inc., 2014. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MMRF1012NR1 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 Machine Model (per EIA/JESD22--A115) A Charge Device Model (per JESD22--C101) IV Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 C Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit IGSS — — 10 Adc V(BR)DSS 120 — — Vdc Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) IDSS — — 50 Adc Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) IDSS — — 2.5 mA Gate Threshold Voltage (VDS = 10 Vdc, ID = 28 Adc) VGS(th) 1 1.68 3 Vdc Gate Quiescent Voltage (VDD = 50 Vdc, ID = 30 mAdc, Measured in Functional Test) VGS(Q) 1.5 2.68 3.5 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 70 mAdc) VDS(on) — 0.26 — Vdc Reverse Transfer Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 0.13 — pF Output Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 7.3 — pF Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Ciss — 16.3 — pF Characteristic Off Characteristics Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain--Source Breakdown Voltage (ID = 5 mA, VGS = 0 Vdc) On Characteristics Dynamic Characteristics Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 30 mA, Pout = 10 W, f = 220 MHz, CW Power Gain Gps 22.5 23.9 25.5 dB Drain Efficiency D 58 62 — % Input Return Loss IRL — --14 --9 dB ATTENTION: The MMRF1012N is a high power device and special considerations must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to ensure proper mounting of this device. MMRF1012NR1 2 RF Device Data Freescale Semiconductor, Inc. B2 L2 B1 VBIAS + + C2 C3 + C11 C4 C5 C6 C7 C12 C13 C14 C15 VSUPPLY C16 C8 L3 R1 RF INPUT Z1 Z2 L1 Z3 Z5 Z6 Z8 Z9 Z10 C1 Z11 C18 Z4 C9 Z1 Z2 Z3 Z4 Z5 Z6 Z7 RF OUTPUT C10 C17 DUT 0.235 x 0.082 Microstrip 1.190 x 0.082 Microstrip 0.619 x 0.082 Microstrip 0.190 x 0.270 Microstrip 0.293 x 0.270 Microstrip 0.120 x 0.270 Microstrip Z7 Z8 Z9 Z10 Z11 PCB 0.062 x 0.270 Microstrip 0.198 x 0.082 Microstrip 5.600 x 0.082 Microstrip 0.442 x 0.082 Microstrip 0.341 x 0.082 Microstrip Arlon CuClad 250GX--0300--55--22, 0.030, r = 2.55 Figure 2. MMRF1012NR1 Test Circuit Schematic Table 6. MMRF1012NR1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1, B2 95 , 100 MHz Long Ferrite Beads 2743021447 Fair--Rite C1, C8, C11, C18 1000 pF Chip Capacitors ATC100B102JT50XT ATC C2 10 F, 35 V Tantalum Capacitor T491D106K035AT Kemet C3 22 F, 35 V Tantalum Capacitor T491X226K035AT Kemet C4, C13 39 K pF Chip Capacitors ATC200B393KT50XT ATC C5, C14 22 K pF Chip Capacitors ATC200B223KT50XT ATC C6, C15 0.1 F Chip Capacitors CDR33BX104AKYS Kemet C7, C12 2.2 F, 50 V Chip Capacitors C1825C225J5RAC Kemet C9 0.6--4.5 pF Variable Capacitor, Gigatrim 27271SL Johanson C10 12 pF Chip Capacitor ATC100B120JT500XT ATC C16 470 F, 63 V Electrolytic Capacitor ESMG630ELL471MK205 United Chemi--Con C17 27 pF Chip Capacitor ATC100B270JT500XT ATC L1 17.5 nH Inductor B06T CoilCraft L2, L3 82 nH Inductors 1812SMS--82NJ CoilCraft R1 120 , 1/4 W Chip Resistor CRCW1206120RFKEA Vishay MMRF1012NR1 RF Device Data Freescale Semiconductor, Inc. 3 C14 C5 C13 C6 C4 C7 C3 R1 C16 C12 C11 C8 L3 CUT OUT AREA L1 C1 B2 L2 B1 C2 C15 C17 C18 C10 C9 Figure 3. MMRF1012NR1 Test Circuit Component Layout MMRF1012NR1 4 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS 100 100 ID, DRAIN CURRENT (AMPS) C, CAPACITANCE (pF) Ciss 10 Coss Measured with 30 mV(rms)ac @ 1 MHz VGS = 0 Vdc 1 10 1 Crss 0 10 20 40 30 10 1 50 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Figure 4. Capacitance versus Drain--Source Voltage Figure 5. DC Safe Operating Area 0.35 25 0.3 24 0.2 2.75 V 0.15 2.63 V 2.5 V 0.1 0.05 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) 0 Gps, POWER GAIN (dB) VGS = 3 V 0.25 0 20 40 60 80 100 100 200 10 20 IDQ = 45 mA 38 mA 23 30 mA 22 23 mA 21 20 15 mA VDD = 50 Vdc f1 = 220 MHz 19 2.25 V 18 120 0.1 1 DRAIN VOLTAGE (VOLTS) Pout, OUTPUT POWER (WATTS) CW Figure 6. DC Drain Current versus Drain Voltage Figure 7. CW Power Gain versus Output Power --20 15 mA --25 23 mA --30 47 Pout, OUTPUT POWER (dBm) ID, DRAIN CURRENT (AMPS) TC = 25C 0.1 0.1 30 mA --35 38 mA --40 45 mA --45 --50 IDQ = 60 mA --55 1 VDD = 50 Vdc f1 = 220 MHz, f2 = 220.1 MHz Two--Tone Measurements 100 kHz Tone Spacing 10 20 Ideal 45 P3dB = 40.87 dBm (12.2 W) 43 P1dB = 40.43 dBm (11.04 W) 41 Actual 39 37 13 VDD = 50 Vdc, IDQ = 30 mA f = 220 MHz 15 17 19 21 23 Pout, OUTPUT POWER (WATTS) PEP Pin, INPUT POWER (dBm) Figure 8. Third Order Intermodulation Distortion versus Output Power Figure 9. CW Output Power versus Input Power MMRF1012NR1 RF Device Data Freescale Semiconductor, Inc. 5 TYPICAL CHARACTERISTICS 45 26 TC = --30_C Pout, OUTPUT POWER (dBm) 22 20 18 45 V 16 40 V 35 V 30 V 14 25 V 12 10 50 V IDQ = 30 mA f = 220 MHz VDD = 20 V 0 2 40 85_C 25_C 35 30 VDD = 50 Vdc IDQ = 30 mA f = 220 MHz 25 20 4 6 8 10 12 0 14 10 5 20 15 25 Pout, OUTPUT POWER (WATTS) CW Pin, INPUT POWER (dBm) Figure 10. Power Gain versus Output Power Figure 11. Power Output versus Power Input 26 25 Gps, POWER GAIN (dB) 25_C --30_C 63 Gps 24 85_C TC = --30_C 23 72 54 45 22 36 21 D 25_C 85_C 20 27 18 VDD = 50 Vdc IDQ = 30 mA f = 220 MHz 19 18 0.1 D, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 24 9 0 1 10 20 Pout, OUTPUT POWER (WATTS) CW Figure 12. Power Gain and Drain Efficiency versus CW Output Power Gps @ 220 MHz 25 70 D @ 130 MHz 60 50 24 D @ 64 MHz 23 40 D @ 220 MHz 22 30 D @ 450 MHz 20 21 20 VDD = 50 Vdc IDQ = 30 mA Gps @ 450 MHz 0 2 4 6 8 107 106 10 19 0 108 MTTF (HOURS) Gps, POWER GAIN (dB) 26 109 80 Gps @ 64 MHz Gps @ 130 MHz D, DRAIN EFFICIENCY (%) 27 10 Pout, OUTPUT POWER (WATTS) CW Figure 13. Power Gain and Drain Efficiency versus CW Output Power 12 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 10 W CW, and D = 62%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 14. MTTF versus Junction Temperature — CW MMRF1012NR1 6 RF Device Data Freescale Semiconductor, Inc. Zo = 50 Zsource f = 220 MHz f = 220 MHz Zload VDD = 50 Vdc, IDQ = 30 mA, Pout = 10 W CW f MHz Zsource Zload 220 20 + j25 75 + j44 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 15. Series Equivalent Source and Load Impedance MMRF1012NR1 RF Device Data Freescale Semiconductor, Inc. 7 C10 C9 C8 C14 C6 C7 C16 B2 C15 L5 B1 C5 C13 C4 L1 R1 L2 C2 C3 CUT OUT AREA C1 C17 C18 L3 C19 L4 C11 C12 Figure 16. MMRF1012NR1 Test Circuit Component Layout — 130 MHz Table 7. MMRF1012NR1 Test Circuit Component Designations and Values — 130 MHz Part Description Part Number Manufacturer B1, B2 95 , 100 MHz Long Ferrite Beads, Surface Mount 2743021447 Fair--Rite C1, C5, C18, C19 1000 pF Chip Capacitors ATC100B102JT50XT ATC C2, C12 0.6--4.5 pF Variable Capacitors, Gigatrim 27271SL Johanson C3 27 pF Chip Capacitor ATC100B270JT500XT ATC C4, C13 2.2 F, 50 V Chip Capacitors C1825C225J5RAC Kemet C6, C14 0.1 F, 50 V Chip Capacitors CDR33BX104AKYM Kemet C7, C15 22K pF Chip Capacitors ATC200B223KT50XT ATC C8, C16 39K pF Chip Capacitors ATC200B393KT50XT ATC C9 22 F, 35 V Tantalum Capacitor T491X226K035AT Kemet C10 10 F, 35 V Tantalum Capacitor T491D106K035AT Kemet C11 16 pF Chip Capacitor ATC100B160JT500XT ATC C17 330 F, 63 V Electrolytic Capacitor MCRH63V337M13X21--RH Multicomp L1 17.5 nH Inductor B06T CoilCraft L2, L5 82 nH Inductors 1812SMS--82NJ CoilCraft L3 35.5 nH Inductor B09T CoilCraft L4 43 nH Inductor B10T CoilCraft R1 100 , 1/4 W Chip Resistor CRCW1206100RFKEA Vishay PCB 0.030, r = 2.55 CuClad 250GX--0300--55--22 Arlon MMRF1012NR1 8 RF Device Data Freescale Semiconductor, Inc. C10 C9 C8 C16 C6 C7 L4 C4 L1 C2 C11 C5 R1 C19 L2 L3 C12 CUT OUT AREA C20 C1 B2 C17 B1 C3 C18 C15 C13 C14 Figure 17. MMRF1012NR1 Test Circuit Component Layout — 450 MHz Table 8. MMRF1012NR1 Test Circuit Component Designations and Values — 450 MHz Part Description Part Number Manufacturer B1, B2 95 , 100 MHz Long Ferrite Beads, Surface Mount 2743021447 Fair--Rite C1, C5, C12, C15 240 pF Chip Capacitors ATC100B241JT200XT ATC C2, C3 10 pF Chip Capacitors ATC100B100JT500XT ATC C4, C11 2.2 F, 50 V Chip Capacitors C1825C225J5RAC Kemet C6, C16 0.1 uF 50V Chip Capacitors CDR33BX104AKYM Kemet C7, C17 22K pF Chip Capacitors ATC200B223KT50XT ATC C8, C18 39K pF Chip Capacitors ATC200B393KT50XT ATC C9 22 F, 35 V Tantalum Capacitor T491X226K035AT Kemet C10 10 F, 35 V Tantalum Capacitor T491D106K035AT Kemet C13, C14 6.2 pF Chip Capacitors ATC100B6R2BT500XT ATC C19 470 F, 63 V Electrolytic Capacitor MCGPR63V477M13X26--RH Multicomp C20 47 F, 50 V Electrolytic Capacitor 476KXM050M Illinois Cap L1 17.5 nH Inductor B06T CoilCraft L2, L4 82 nH Inductors 1812SMS--82NJ CoilCraft L3 5.0 nH Inductor A02T CoilCraft R1 120 , 1/4 W Chip Resistor CRCW1206120RFKEA Vishay PCB 0.030, r = 2.55 CuClad 250GX--0300--55--22 Arlon MMRF1012NR1 RF Device Data Freescale Semiconductor, Inc. 9 C11 C10 C9 C18 C7 C8 C20 L6 B1 C6 C5 C4 C16 C1 R1 L3 C2 C3 C21 C17 L2 CUT OUT AREA L1 B2 C19 L4 C15 L5 C14 C12 C13 Figure 18. MMRF1012NR1 Test Circuit Component Layout — 64 MHz Table 9. MMRF1012NR1 Test Circuit Component Designations and Values — 64 MHz Part Description Part Number Manufacturer B1, B2 95 100 MHz Long Ferrite Beads, Surface Mount 2743021447 Fair--Rite C1, C5, C15, C17 1000 pF Chip Capacitors ATC100B102JT50XT ATC C2 91 pF Chip Capacitor ATC100B910JT500XT ATC C3, C14 22 pF Chip Capacitors ATC100B220JT500XT ATC C4, C16 2.2 F, 50 V Chip Capacitors C1825C225J5RAC Kemet C6 220 nF, 50 V Chip Capacitor C1812C224J5RAC Kemet C7, C18 0.1 F, 50 V Chip Capacitors CDR33BX104AKYM Kemet C8, C19 100K pF Chip Capacitors ATC200B104KT50XT ATC C9, C20 22K pF Chip Capacitors ATC200B223KT50XT ATC C10 22 F, 35 V Tantalum Capacitor T491X226K035AT Kemet C11 10 F, 35 V Tantalum Capacitor T491D106K035AT Kemet C12 68 pF Chip Capacitor ATC100B680JT500XT ATC C13 27 pF Chip Capacitor ATC100B270JT500XT ATC C21 330 F, 63 V Electrolytic Capacitor MCRH63V337M13X21--RH Multicomp L1 17.5 nH Inductor B06T CoilCraft L2 43 nH Inductor B10T CoilCraft L3, L4, L5, L6 82 nH Inductors 1812SMS--82NJ CoilCraft R1 180 , 1/4 W Chip Resistor CRCW1206180RFKEA Vishay PCB 0.030, r = 2.55 CuClad 250GX--0300--55--22 Arlon MMRF1012NR1 10 RF Device Data Freescale Semiconductor, Inc. Zo = 50 f = 450 MHz Zsource f = 450 MHz Zload f = 220 MHz Zsource f = 130 MHz Zsource f = 220 MHz Zload f = 64 MHz Zsource f = 130 MHz Zload f = 64 MHz Zload VDD = 50 Vdc, IDQ = 30 mA, Pout = 10 W CW f MHz Zsource Zload 64 37.5 + j15.1 94.5 + j16.7 130 26.7 + j21.3 83.8 + j35.0 220 20.0 + j25.4 75.0 + j44.0 450 7.70 + j21.0 43.0 + j49.0 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 19. Series Equivalent Source and Load Impedance MMRF1012NR1 RF Device Data Freescale Semiconductor, Inc. 11 50 OHM TYPICAL CHARACTERISTICS Table 10. Common Source S--Parameters (VDD = 50 V, IDQ = 30 mA, TA = 25C, 50 Ohm System) S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 10 0.997 --5.0 11.520 175.6 0.000790 84.6 0.960 --0.8 20 0.994 --9.5 11.419 171.6 0.00157 84.3 0.962 --3.5 30 0.992 --14.5 11.356 167.9 0.00232 78.1 0.963 --5.5 40 0.987 --19.3 11.278 164.1 0.00307 74.6 0.964 --7.7 50 0.981 --24.0 11.187 160.1 0.00380 71.0 0.964 --9.9 60 0.974 --28.6 11.042 156.1 0.00449 67.4 0.963 --12.1 70 0.965 --33.0 10.848 152.1 0.00513 63.8 0.961 --14.2 80 0.955 --37.4 10.636 148.2 0.00574 60.4 0.958 --16.3 90 0.944 --41.6 10.405 144.5 0.00631 57.0 0.955 --18.4 100 0.933 --45.7 10.147 140.8 0.00683 53.8 0.951 --20.4 120 0.912 --53.3 9.603 134.2 0.00776 47.9 0.944 --24.2 140 0.892 --60.4 9.061 127.9 0.00851 42.4 0.936 --27.9 160 0.873 --66.7 8.516 122.2 0.00914 37.6 0.929 --31.3 180 0.856 --72.7 7.993 116.9 0.00967 32.9 0.923 --34.6 200 0.841 --78.1 7.497 112.1 0.0101 28.7 0.918 --37.9 220 0.828 --83.0 7.040 107.5 0.0104 24.9 0.914 --41.1 240 0.819 --87.5 6.612 103.3 0.0107 21.3 0.912 --44.2 260 0.810 --91.7 6.214 99.3 0.0109 18.0 0.909 --47.2 280 0.804 --95.5 5.845 95.7 0.0110 15.0 0.908 --50.2 300 0.799 --99.0 5.507 92.2 0.0112 11.9 0.907 --53.0 320 0.796 --102.2 5.192 88.8 0.0112 9.1 0.906 --55.9 340 0.794 --105.1 4.901 85.7 0.0113 6.5 0.906 --58.6 360 0.793 --107.8 4.630 82.8 0.0112 4.1 0.906 --61.4 380 0.793 --110.4 4.382 79.9 0.0112 2.0 0.906 --64.1 400 0.794 --112.7 4.152 77.2 0.0112 --0.3 0.906 --66.7 420 0.796 --114.9 3.937 74.6 0.0112 --2.5 0.907 --69.3 440 0.798 --116.9 3.733 72.2 0.0111 --4.4 0.907 --71.8 460 0.800 --118.8 3.547 69.8 0.0110 --6.5 0.908 --74.2 480 0.803 --120.5 3.372 67.6 0.0109 --8.5 0.908 --76.7 500 0.807 --122.2 3.213 65.4 0.0108 --10.0 0.909 --79.0 520 0.810 --123.8 3.061 63.3 0.0107 --11.9 0.910 --81.3 540 0.814 --125.4 2.919 61.2 0.0105 --13.5 0.911 --83.6 560 0.817 --126.8 2.784 59.3 0.0104 --14.9 0.912 --85.8 580 0.821 --128.1 2.661 57.5 0.0103 --16.6 0.914 --87.9 600 0.825 --129.3 2.545 55.7 0.0101 --18.1 0.915 --90.0 620 0.829 --130.5 2.436 53.9 0.00996 --19.6 0.917 --92.1 640 0.833 --131.6 2.334 52.2 0.00981 --21.0 0.918 --94.1 660 0.837 --132.7 2.237 50.5 0.00963 --22.4 0.920 --96.0 680 0.840 --133.8 2.144 48.9 0.00946 --23.7 0.921 --97.9 700 0.843 --134.8 2.058 47.3 0.00928 --25.0 0.923 --99.7 720 0.847 --135.8 1.977 45.8 0.00910 --26.1 0.924 --101.4 740 0.850 --136.8 1.900 44.4 0.00894 --27.3 0.926 --103.0 760 0.854 --137.8 1.828 43.0 0.00876 --28.6 0.928 --104.7 780 0.857 --138.7 1.760 41.6 0.00859 --29.7 0.930 --106.2 (continued) MMRF1012NR1 12 RF Device Data Freescale Semiconductor, Inc. 50 OHM TYPICAL CHARACTERISTICS Table 10. Common Source S--Parameters (VDD = 50 V, IDQ = 30 mA, TA = 25C, 50 Ohm System) (continued) S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 800 0.858 --139.7 1.697 40.2 0.00839 --31.1 0.932 --107.6 820 0.861 --140.7 1.636 38.9 0.00818 --32.1 0.934 --109.0 840 0.864 --141.6 1.578 37.6 0.00798 --33.1 0.935 --110.4 860 0.867 --142.6 1.523 36.4 0.00781 --33.8 0.936 --111.7 880 0.870 --143.5 1.471 35.1 0.00763 --34.8 0.938 --112.9 900 0.873 --144.5 1.421 33.9 0.00745 --35.9 0.939 --114.1 MMRF1012NR1 RF Device Data Freescale Semiconductor, Inc. 13 PACKAGE DIMENSIONS MMRF1012NR1 14 RF Device Data Freescale Semiconductor, Inc. MMRF1012NR1 RF Device Data Freescale Semiconductor, Inc. 15 MMRF1012NR1 16 RF Device Data Freescale Semiconductor, Inc. PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following resources to aid your design process. Application Notes AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 July 2014 Description Initial Release of Data Sheet MMRF1012NR1 RF Device Data Freescale Semiconductor, Inc. 17 How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/SalesTermsandConditions. Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. All other product or service names are the property of their respective owners. E 2014 Freescale Semiconductor, Inc. MMRF1012NR1 Document Number: MMRF1012N Rev. 18 0, 7/2014 RF Device Data Freescale Semiconductor, Inc.