Data Sheet

Document Number: MMRF1310H
Rev. 0, 7/2014
Freescale Semiconductor
Technical Data
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
These high ruggedness devices are designed for use in high VSWR military,
industrial (including laser and plasma exciters), broadcast (analog and digital),
and radio/land mobile applications. They are unmatched input and output
designs allowing wide frequency range utilization between 1.8 and 600 MHz.
 Typical Performance: VDD = 50 Vdc, IDQ = 100 mA
Pout
(W)
f
(MHz)
Gps
(dB)
D
(%)
IRL
(dB)
Pulse (100 sec,
20% Duty Cycle)
300 Peak
230
26.5
74.0
--16
CW
300 Avg.
130
25.0
80.0
--15
Signal Type
 Capable of Handling a Load Mismatch of 65:1 VSWR @ 50 Vdc, 230 MHz,
at all Phase Angles
 300 W CW Output Power
 300 W Pulse Peak Power, 20% Duty Cycle, 100 sec
 Capable of 300 W CW Operation
Features
 Unmatched Input and Output Allowing Wide Frequency Range Utilization
 Device can be used Single--Ended or in a Push--Pull Configuration
 Qualified Up to a Maximum of 50 VDD Operation
 Characterized from 30 V to 50 V for Extended Power Range
 Suitable for Linear Application with Appropriate Biasing
 Integrated ESD Protection
 Greater Negative Gate--Source Voltage Range for Improved Class C Operation
 Characterized with Series Equivalent Large--Signal Impedance Parameters
 NI--780H--4L in Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width,
13--inch Reel.
 NI--780S--4L in Tape and Reel. R5 Suffix = 50 Units, 32 mm Tape Width,
13--inch Reel.
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
--0.5, +133
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Storage Temperature Range
Tstg
--65 to +150
C
Case Operating Temperature
TC
150
C
Total Device Dissipation @ TC = 25C
Derate above 25C
PD
1050
5.26
W
W/C
Operating Junction Temperature (1,2)
TJ
225
C
MMRF1310HR5
MMRF1310HSR5
1.8--600 MHz, 300 W CW, 50 V
BROADBAND
RF POWER MOSFETs
NI--780H--4L
MMRF1310HR5
NI--780S--4L
MMRF1310HSR5
Gate A 3
1 Drain A
Gate B 4
2 Drain B
(Top View)
Note: The backside of the package is the
source terminal for the transistors.
Figure 1. Pin Connections
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case (4)
Pulse: Case Temperature 75C, 300 W Peak, 100 sec Pulse Width, 20% Duty Cycle,
50 Vdc, IDQ = 100 mA, 230 MHz
CW: Case Temperature 87C, 300 W CW, 50 Vdc, IDQ = 1100 mA, 230 MHz
Symbol
Value (2,3)
Unit
C/W
ZJC
RJC
0.05
0.19
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Same test circuit is used for both pulsed and CW.
 Freescale Semiconductor, Inc., 2014. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MMRF1310HR5 MMRF1310HSR5
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
B
Charge Device Model (per JESD22--C101)
IV
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic
Off Characteristics
Symbol
Min
Typ
Max
Unit
IGSS
—
—
1
Adc
133
—
—
Vdc
(1)
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
Drain--Source Breakdown Voltage
(VGS = 0 Vdc, ID = 50 mA)
V(BR)DSS
Zero Gate Voltage Drain Leakage Current
(VDS = 50 Vdc, VGS = 0 Vdc)
IDSS
—
—
5
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 100 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Gate Threshold Voltage (1)
(VDS = 10 Vdc, ID = 480 Adc)
VGS(th)
1.7
2.2
2.7
Vdc
Gate Quiescent Voltage
(VDD = 50 Vdc, ID = 100 mAdc, Measured in Functional Test)
VGS(Q)
2.0
2.5
3.0
Vdc
Drain--Source On--Voltage (1)
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
—
0.25
—
Vdc
Reverse Transfer Capacitance
(VDS = 50 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
0.8
—
pF
Output Capacitance
(VDS = 50 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
76
—
pF
Input Capacitance
(VDS = 50 Vdc, VGS = 0 Vdc  30 mV(rms)ac @ 1 MHz)
Ciss
—
188
—
pF
On Characteristics
Dynamic Characteristics (1)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 100 mA, Pout = 300 W Peak (60 W Avg.), f = 230 MHz,
100 sec Pulse Width, 20% Duty Cycle
Power Gain
Gps
25.0
26.5
28.0
dB
Drain Efficiency
D
72.0
74.0
—
%
Input Return Loss
IRL
—
--16
--9
dB
Load Mismatch (In Freescale Application Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 100 mA
VSWR 65:1 at all Phase Angles
Pulse: Pout = 300 W Peak (60 W Avg.), f = 230 MHz,
100 sec Pulse Width, 20% Duty Cycle
CW: Pout = 300 W Avg., f = 130 MHz

No Degradation in Output Power
1. Each side of device measured separately.
MMRF1310HR5 MMRF1310HSR5
2
RF Device Data
Freescale Semiconductor, Inc.
VBIAS
+
L1
C8
C9
+
+
+
C14
C15
C10
C11
C12
C13
VSUPPLY
C16
L2
C4
C5
C6
R1
C7
Z8
RF
INPUT
Z1
Z2
Z3
Z4
Z5
Z6
Z9
Z10
Z11
C1
Z1
Z2*
Z3*
Z4
Z5
Z6
Z7, Z8
Z13
C20
Z7
C17
C2
Z12
RF
OUTPUT
C18
C19
DUT
C3
0.352 x 0.080 Microstrip
1.780 x 0.080 Microstrip
0.576 x 0.080 Microstrip
0.220 x 0.220 Microstrip
0.322 x 0.220 Microstrip
0.168 x 0.220 Microstrip
0.282 x 0.630 Microstrip
Z9
Z10*
Z11*
Z12*
Z13
0.192 x 0.170 Microstrip
0.366 x 0.170 Microstrip
2.195 x 0.170 Microstrip
0.614 x 0.170 Microstrip
0.243 x 0.080 Microstrip
* Line length includes microstrip bends
Note: Same test circuit is used for both pulsed and CW.
Figure 2. MMRF1310HR5(HSR5) Test Circuit Schematic
Table 5. MMRF1310HR5(HSR5) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C20
15 pF Chip Capacitors
ATC100B150JT500XT
ATC
C2
82 pF Chip Capacitor
ATC100B820JT500XT
ATC
C3, C17
91 pF Chip Capacitors
ATC100B910JT500XT
ATC
C4, C10
1000 pF Chip Capacitors
ATC100B102JT50XT
ATC
C5, C11
10K pF Chip Capacitors
ATC200B103KT50XT
ATC
C6
0.1 F, 50 V Chip Capacitor
CDR33BX104AKWS
AVX
C7
2.2 F, 100 V Chip Capacitor
HMK432B7225KM--T
Taiyo Yuden
C8
10 F, 35 V Tantalum Capacitor
T491D106K035AT
Kemet
C9
2.2 F, 100 V Chip Capacitor
G2225X7R225KT3AB
ATC
C12
0.1 F, 100 V Chip Capacitor
C1812F104K1RAC
Kemet
C13
0.01 F, 100 V Chip Capacitor
C1825C103K1GAC
Kemet
C14, C15, C16
220 F, 100 V Electolytic Capacitors
MCGPR100V227M16X26--RH
Multicomp
C18, C19
18 pF Chip Capacitors
ATC100B180JT500XT
ATC
L1
120 nH Inductor
1812SMS--R12JLC
Coilcraft
L2
17.5 nH Inductor
GA3095--ALC
Coilcraft
R1
1000 , 1/2 W Chip Resistor
CRCW20101K00FKEF
Vishay
PCB
0.030, r = 2.55
AD255A
Arlon
MMRF1310HR5 MMRF1310HSR5
RF Device Data
Freescale Semiconductor, Inc.
3
C8
C14
L1
C13
C6
C5
C1
C15
C16
C12
C7
C9
C11
C10
C4
C2
L2
R1
C17
C18
C20
CUT OUT AREA
C3
C19
Figure 3. MMRF1310HR5(HSR5) Test Circuit Component Layout
MMRF1310HR5 MMRF1310HSR5
4
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — PULSED
1000
60
Pout, OUTPUT POWER (dBm) PULSED
C, CAPACITANCE (pF)
Ciss
100
Coss
10
Crss
1
0.1
Measured with 30 mV(rms)ac @ 1 MHz
VGS = 0 Vdc
0
10
20
30
Ideal
P2dB = 55.8 dBm (380 W)
58
57
P1dB = 55.4 dBm
(344 W)
56
Actual
55
VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz
Pulse Width = 100 sec, 20% Duty Cycle
54
53
26
50
40
P3dB = 56.0 dBm (398 W)
59
27
28
29
30
31
32
33
34
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Pin, INPUT POWER (dBm) PEAK
Note: Each side of device measured separately.
Figure 5. Output Power versus Input Power
Figure 4. Capacitance versus Drain--Source Voltage
70
26
60
25
50
Gps
24
40
23
30
22
20
50 V
24
23
40 V
22
45 V
35 V
VDD = 30 V
19
0
50
150
100
200
250
300
350
Pout, OUTPUT POWER (WATTS) PEAK
Figure 6. Power Gain and Drain Efficiency
versus Output Power
Figure 7. Power Gain versus Output Power
29
35 V
VDD = 30 V
40 V
45 V
VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz
28 Pulse Width = 100 sec, 20% Duty Cycle
50 V
Gps, POWER GAIN (dB)
70
60
50
40
VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz
Pulse Width = 100 sec, 20% Duty Cycle
30
0
400
Pout, OUTPUT POWER (WATTS) PEAK
80
D, DRAIN EFFICIENCY (%)
25
20
20
600
100
26
21
D
90
20
27
Gps, POWER GAIN (dB)
27
VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz
Pulse Width = 100 sec, 20% Duty Cycle
28
80
D, DRAIN EFFICIENCY (%)
28
Gps, POWER GAIN (dB)
29
90
VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz
Pulse Width = 100 sec, 20% Duty Cycle
50
100
150
200
250
300
350
27
23
21
10
90
80
60
25_C
50
TC = --30_C
24
22
400
25_C
--30_C 70
Gps
26
25
85_C
40
85_C
30
D, DRAIN EFFICIENCY (%)
29
20
D
100
Pout, OUTPUT POWER (WATTS) PEAK
Pout, OUTPUT POWER (WATTS) PEAK
Figure 8. Drain Efficiency versus Output Power
Figure 9. Power Gain and Drain Efficiency
versus Output Power
10
600
MMRF1310HR5 MMRF1310HSR5
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS — TWO--TONE (1)
--10
VDD = 50 Vdc, IDQ = 1600 mA, f1 = 230 MHz
f2 = 230.1 MHz, Two--Tone Measurements
--20
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
--10
--30
--40
3rd Order
--50
5th Order
--60
--70
7th Order
--80
10
100
400
3rd Order
--30
--40
5th Order
--50
7th Order
--60
--70
0.1
10
1
TWO--TONE SPACING (MHz)
Figure 10. Intermodulation Distortion
Products versus Output Power
Figure 11. Intermodulation Distortion
Products versus Two--Tone Spacing
40
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
--15
IDQ = 1600 mA
29
Gps, POWER GAIN (dB)
--20
Pout, OUTPUT POWER (WATTS) PEP
30
1400 mA
28
1100 mA
27 900 mA
26
25
VDD = 50 Vdc, Pout = 250 W (PEP)/62.5 W Avg. per Tone
IDQ = 1600 mA, Two--Tone Measurements
VDD = 50 Vdc, f1 = 230 MHz, f2 = 230.1 MHz
Two--Tone Measurements
650 mA
5
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 12. Two--Tone Power Gain versus
Output Power
500
--20
VDD = 50 Vdc, f1 = 230 MHz, f2 = 230.1 MHz
Two--Tone Measurements
--25
--30
--35
--40
IDQ = 650 mA
900 mA
1100 mA
1400 mA
--45
--50
10
1600 mA
100
400
Pout, OUTPUT POWER (WATTS) PEP
Figure 13. Third Order Intermodulation
Distortion versus Output Power
1. The distortion products are referenced to one of the two tones and the peak envelope power (PEP) is 6 dB above the power in a single tone.
MMRF1310HR5 MMRF1310HSR5
6
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
109
VDD = 50 Vdc
Pout = 300 W Avg.
D = 80%
MTTF (HOURS)
108
107
106
105
104
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (C)
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 14. MTTF versus Junction Temperature — CW
MMRF1310HR5 MMRF1310HSR5
RF Device Data
Freescale Semiconductor, Inc.
7
Zsource
f = 230 MHz
f = 230 MHz
Zload
Zo = 5 
VDD = 50 Vdc, IDQ = 100 mA, Pout = 300 W Peak
f
MHz
Zsource

Zload

230
0.65 + j2.79
1.64 + j2.85
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance
MMRF1310HR5 MMRF1310HSR5
8
RF Device Data
Freescale Semiconductor, Inc.
VDD = 50 Vdc, IDQ = 100 mA
Zsource

Zload

10
36.0 + j128
12.0 + j8.80
25
20.0 + j64.0
12.4 + j6.40
f
MHz
50
16.0 + j41.6
11.6 + j14.4
100
8.00 + j24.8
9.00 + j9.80
200
3.00 + j12.8
7.20 + j6.40
300
1.52 + j7.92
6.00 + j5.00
400
1.08 + j5.04
4.20 + j4.00
500
1.04 + j3.16
3.32 + j2.72
600
0.88 + j1.76
2.72 + j1.68
1. Simulated performance at 1 dB gain compression.
Zsource = Source impedance presented from gate to gate.
Zload
= Load impedance presented from drain to drain.
Source
+
Device
Under
Test
--
-Z
source
Load
+
Z
load
Figure 16. Simulated Source and Load Impedances Optimized for IRL,
Output Power and Drain Efficiency — Push--Pull
MMRF1310HR5 MMRF1310HSR5
RF Device Data
Freescale Semiconductor, Inc.
9
PACKAGE DIMENSIONS
MMRF1310HR5 MMRF1310HSR5
10
RF Device Data
Freescale Semiconductor, Inc.
MMRF1310HR5 MMRF1310HSR5
RF Device Data
Freescale Semiconductor, Inc.
11
MMRF1310HR5 MMRF1310HSR5
12
RF Device Data
Freescale Semiconductor, Inc.
MMRF1310HR5 MMRF1310HSR5
RF Device Data
Freescale Semiconductor, Inc.
13
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following resources to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
 Electromigration MTTF Calculator
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software
& Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
July 2014
Description
 Initial Release of Data Sheet
MMRF1310HR5 MMRF1310HSR5
14
RF Device Data
Freescale Semiconductor, Inc.
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E 2014 Freescale Semiconductor, Inc.
MMRF1310HR5 MMRF1310HSR5
Document
Number:
RF Device
DataMMRF1310H
Rev.
0, 7/2014Semiconductor,
Freescale
Inc.
15