Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MMRF1011H
Rev. 0, 7/2014
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
MMRF1011HR5
MMRF1011HSR5
RF power transistors designed for applications operating at frequencies
between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are
suitable for use in pulse applications, such as L-- Band radar.
 Typical Pulse Performance: VDD = 50 Vdc, IDQ = 150 mA, Pout =
330 W Peak (39.6 W Avg.), f = 1400 MHz, Pulse Width = 300 sec,
Duty Cycle = 12%
Power Gain — 18 dB
Drain Efficiency — 60.5%
1400 MHz, 330 W, 50 V
PULSE L--BAND
RF POWER MOSFETs
 Capable of Handling 5:1 VSWR @ 50 Vdc, 1400 MHz, 330 W Peak Power
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 50 VDD Operation
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
 In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.





NI--780H--2L
MMRF1011HR5
NI--780S--2L
MMRF1011HSR5
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +100
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
C
Case Operating Temperature
TC
150
C
Operating Junction Temperature (1,2)
TJ
225
C
1 Drain
Gate 2
(Top View)
Figure 1. Pin Connections
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 65C, 330 W Peak, 300 sec Pulse Width, 12% Duty Cycle
Symbol
Value (2,3)
Unit
ZJC
0.13
C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
 Freescale Semiconductor, Inc., 2014. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MMRF1011HR5 MMRF1011HSR5
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1C
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
IV
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
IGSS
—
—
10
Adc
100
—
—
Vdc
Off Characteristics
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
Drain--Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 mA)
V(BR)DSS
Zero Gate Voltage Drain Leakage Current
(VDS = 50 Vdc, VGS = 0 Vdc)
IDSS
—
—
50
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 90 Vdc, VGS = 0 Vdc)
IDSS
—
—
2.5
mA
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 662 Adc)
VGS(th)
0.9
1.6
2.4
Vdc
Gate Quiescent Voltage
(VDD = 50 Vdc, ID = 150 mAdc, Measured in Functional Test)
VGS(Q)
1.5
2.4
3
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 1.63 Adc)
VDS(on)
—
0.26
—
Vdc
Reverse Transfer Capacitance
(VDS = 50 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
0.6
—
pF
Output Capacitance
(VDS = 50 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
350
—
pF
Input Capacitance
(VDS = 50 Vdc, VGS = 0 Vdc  30 mV(rms)ac @ 1 MHz)
Ciss
—
330
—
pF
On Characteristics
Dynamic Characteristics (1)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 330 W Peak (39.6 W Avg.), f = 1400 MHz,
Pulsed, 300 sec Pulse Width, 12% Duty Cycle
Power Gain
Gps
16.5
18
19.5
dB
Drain Efficiency
D
59(2)
60.5(2)
—
%
Input Return Loss
IRL
—
--12
--9
dB
Pulse RF Performance (In Freescale Application Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 330 W Peak
(39.6 W Avg.), f1 = 1200 MHz, f2 = 1300 MHz and f3 = 1400 MHz, 300 sec Pulse Width, 12% Duty Cycle, tr = 50 ns
Relative Insertion Phase

—
10
—

Gain Flatness
GF
—
0.5
—
dB
Pulse Amplitude Droop
Drp
—
0.3
—
dB
Harmonic 2nd and 3rd
H2 & H3
—
--20
—
dBc
—
--65
—
dBc
Spurious Response
Load Mismatch Stability
(VSWR = 3:1 at all Phase Angles)
VSWR--S
All Spurs Below --60 dBc
Load Mismatch Tolerance
(VSWR = 5:1 at all Phase Angles)
VSWR--T
No Degradation in Output Power
1. Part internally matched both on input and output.
2. Drain efficiency is calculated by: η = 100 × P out where: Ipeak = (IAVG -- IDQ) / Duty Cycle (%) + IDQ.
D
V DD × I peak
MMRF1011HR5 MMRF1011HSR5
2
RF Device Data
Freescale Semiconductor, Inc.
C3
VBIAS
R1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
C6
C7
Z23
C8
Z22
Z13
Z1
+
C4
+
C9
RF
INPUT
C5
VSUPPLY
+
Z9
Z10 Z11
C1
Z14 Z15 Z16 Z17
Z18
Z19 Z20
Z21
RF
OUTPUT
C2
Z12
DUT
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
Z12
0.205 x 0.080 Microstrip
0.721 x 0.022 Microstrip
0.080 x 0.104 Microstrip
0.128 x 0.022 Microstrip
0.062 x 0.134 Microstrip
0.440 x 0.022 Microstrip
0.262 x 0.496 Microstrip
0.030 x 0.138 Microstrip
0.256 x 0.028 Microstrip
0.058 x 0.254 Microstrip
0.344 x 0.087 Microstrip
0.110 x 0.087 Microstrip
Z13
Z14
Z15
Z16
Z17
Z18
Z19
Z20
Z21
Z22
Z23
PCB
0.110 x 0.866 Microstrip
0.630 x 0.866 Microstrip
0.307 x 0.470 Microstrip
0.045 x 0.221 Microstrip
0.171 x 0.136 Microstrip
0.120 x 0.430 Microstrip
0.964 x 0.136 Microstrip
0.177 x 0.078 Microstrip
0.215 x 0.078 Microstrip
1.577 x 0.070 Microstrip
1.459 x 0.070 Microstrip
Arlon CuClad 250GX--0300--55--22, 0.030, r = 2.55
Figure 2. MMRF1011HR5(HSR5) Test Circuit Schematic
Table 5. MMRF1011HR5(HSR5) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
43 pF Chip Capacitor
ATC100B430JT500XT
ATC
C2
18 pF Chip Capacitor
ATC100B180JT500XT
ATC
C3
33 pF Chip Capacitor
ATC100B330JT500XT
ATC
C4
27 pF Chip Capacitor
ATC100B270JT500XT
ATC
C5
2.2 F, 100 V Chip Capacitor
2225X7R225KT3AB
ATC
C6
470 F, 63 V Electrolytic Capacitor
EMVY630GTR471MMH0S
Multicomp
C7
330 pF, 63 V Electrolytic Capacitor
EMVY630GTR331MMH0S
Multicomp
C8
0.1 F, 35 V Chip Capacitor
CDR33BX104AKYS
Kemet
C9
10 F, 35 V Tantalum Capacitor
T491D106K035AT
Kemet
R1
10 , 1/4 W Chip Resistor
CRCW120610R0FKEA
Vishay
MMRF1011HR5 MMRF1011HSR5
RF Device Data
Freescale Semiconductor, Inc.
3
C9
C3
C4
C8
C6
C5
R1
C7
C2
CUT OUT AREA
C1
Figure 3. MMRF1011HR5(HSR5) Test Circuit Component Layout
MMRF1011HR5 MMRF1011HSR5
4
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
160
Coss
Ciss
100
MAXIMUM OPERATING Tcase (C)
C, CAPACITANCE (pF)
1000
Measured with 30 mV(rms)ac @ 1 MHz
VGS = 0 Vdc
10
Crss
1
140
120
100
Pout = 300 W
80
40
VDD = 50 Vdc, IDQ = 150 mA
f = 1200 MHz, Pulse Width = 300 sec
20
0
0.1
0
10
20
30
40
0
50
6
8
10
12
14
16
DUTY CYCLE (%)
Figure 4. Capacitance versus Drain--Source Voltage
Figure 5. Safe Operating Area
24
65
22
55
59
58
20
45
D
35
18
VDD = 50 Vdc, IDQ = 150 mA, f = 1400 MHz
Pulse Width = 300 sec, Duty Cycle = 12%
16
50
Pout, OUTPUT POWER (dBm)
Gps
D, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
4
2
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
57
25
100
56
55
400
31
33
35
37
Pin, INPUT POWER (dBm) PEAK
21
Gps, POWER GAIN (dB)
450 mA
19
100
400
39
IDQ = 150 mA, f = 1400 MHz
Pulse Width = 300 sec
Duty Cycle = 12%
20
19
18
17
35 V
16
VDD = 50 Vdc, f = 1400 MHz
Pulse Width = 300 sec, Duty Cycle = 12%
50
29
Figure 7. Output Power versus Input Power
150 mA
17
VDD = 50 Vdc, IDQ = 150 mA, f = 1400 MHz
Pulse Width = 300 sec, Duty Cycle = 12%
Pout, OUTPUT POWER (WATTS) PEAK
20 300 mA
18
Actual
Figure 6. Power Gain and Drain Efficiency
versus Output Power
IDQ = 600 mA
21
P1dB = 54.77 dBm (300 W)
51
50
49
22
20
18
Ideal
P3dB = 55.30 dBm (339 W)
54
53
52
48
47
27
22
Gps, POWER GAIN (dB)
Pout = 270 W
Pout = 330 W
60
15
50
40 V
45 V 50 V
VDD = 30 V
100
400
Pout, OUTPUT POWER (WATTS) PEAK
Pout, OUTPUT POWER (WATTS) PEAK
Figure 8. Power Gain versus Output Power
Figure 9. Power Gain versus Output Power
MMRF1011HR5 MMRF1011HSR5
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
25_C
55_C
25_C
300
Gps, POWER GAIN (dB)
85_C
200
100
22
20
25_C
85_C
1
2
3
4
5
6
D
55_C
34
VDD = 50 Vdc, IDQ = 150 mA, f = 1400 MHz
Pulse Width = 300 sec, Duty Cycle = 12%
16
50
100
Pin, INPUT POWER (WATTS) PEAK
22
400
Pout, OUTPUT POWER (WATTS) PEAK
Figure 10. Output Power versus Input Power
Figure 11. Power Gain and Drain Efficiency
versus Output Power
63
19
18
Gps
62
17
Gps, POWER GAIN (dB)
58
61
16
60
D
15
59
14
0
13
--5
IRL
--10
12
--15
11
10
9
1200
VDD = 50 Vdc, IDQ = 150 mA, Pout = 330 W Peak (39.6 W Avg.)
Pulse Width = 300 sec, Duty Cycle = 12%
1225
1250
1275
1300
1325
1350
1375
--20
--25
1400
D, DRAIN
EFFICIENCY (%)
0
70
46
18
VDD = 50 Vdc, IDQ = 150 mA, f = 1400 MHz
Pulse Width = 300 sec, Duty Cycle = 12%
0
85_C
Gps
TC = --30_C
--30_C
IRL, INPUT RETURN
LOSS (dB)
Pout, OUTPUT POWER (WATTS) PULSED
TC = --30_C
D, DRAIN EFFICIENCY (%)
24
400
f, FREQUENCY (MHz)
Figure 12. Broadband Performance @ Pout = 330 Watts Peak
MTTF (HOURS)
108
107
106
105
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 50 Vdc, Pout = 330 W Peak, Pulse Width = 300 sec,
Duty Cycle = 12%, and D = 60.5%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 13. MTTF versus Junction Temperature
MMRF1011HR5 MMRF1011HSR5
6
RF Device Data
Freescale Semiconductor, Inc.
Zo = 10 
f = 1400 MHz
f = 1400 MHz
Zload
Zsource
f = 1200 MHz
f = 1200 MHz
VDD = 50 Vdc, IDQ = 150 mA, Pout = 330 W Peak
f
MHz
Zsource

Zload

1200
2.70 -- j4.10
2.97 -- j2.66
1300
4.93 -- j2.66
2.85 -- j2.40
1400
7.01 -- j2.87
3.17 -- j1.78
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 14. Series Equivalent Source and Load Impedance
MMRF1011HR5 MMRF1011HSR5
RF Device Data
Freescale Semiconductor, Inc.
7
PACKAGE DIMENSIONS
MMRF1011HR5 MMRF1011HSR5
8
RF Device Data
Freescale Semiconductor, Inc.
MMRF1011HR5 MMRF1011HSR5
RF Device Data
Freescale Semiconductor, Inc.
9
MMRF1011HR5 MMRF1011HSR5
10
RF Device Data
Freescale Semiconductor, Inc.
MMRF1011HR5 MMRF1011HSR5
RF Device Data
Freescale Semiconductor, Inc.
11
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following resources to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
 Electromigration MTTF Calculator
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software
& Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
July 2014
Description
 Initial Release of Data Sheet
MMRF1011HR5 MMRF1011HSR5
12
RF Device Data
Freescale Semiconductor, Inc.
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E 2014 Freescale Semiconductor, Inc.
MMRF1011HR5 MMRF1011HSR5
Document
Number:
RF Device
DataMMRF1011H
Rev.
0, 7/2014Semiconductor,
Freescale
Inc.
13