Data Sheet

Document Number: MMRF1019N
Rev. 0, 7/2014
Freescale Semiconductor
Technical Data
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
MMRF1019NR4
RF power transistor designed for pulse applications operating at frequencies
between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for
aerospace and defense applications such as DME, IFF, and L--band radar.
 Typical Pulse Performance: VDD = 50 Vdc, IDQ = 10 mA, Pout = 10 W
Peak (2 W Avg.), f = 1090 MHz, Pulse Width = 100 sec, Duty Cycle = 20%
Power Gain — 25 dB
Drain Efficiency — 69%
1090 MHz, 10 W, 50 V
PULSE
RF POWER LDMOS TRANSISTOR
Features
 Characterized with Series Equivalent Large--Signal Impedance Parameters
 Qualified Up to a Maximum of 50 VDD Operation
 Integrated ESD Protection
 Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
 In Tape and Reel. R4 Suffix = 100 Units, 16 mm Tape Width, 7--inch Reel.
PLD--1.5
PLASTIC
Gate
Drain
Note: The center pad on the backside of
the package is the source terminal
for the transistor.
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +100
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
C
Case Operating Temperature
TC
150
C
Operating Junction Temperature
TJ
200
C
Symbol
Value (1,2)
Unit
ZJC
1.6
C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 79C, 10 W Peak, 100 sec Pulse Width, 20% Duty Cycle
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
 Freescale Semiconductor, Inc., 2014. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MMRF1019NR4
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1C
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
IV
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
C
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
IGSS
—
—
10
Adc
110
—
—
Vdc
Off Characteristics
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
Drain--Source Breakdown Voltage
(VGS = 0 Vdc, ID = 7 mA)
V(BR)DSS
Zero Gate Voltage Drain Leakage Current
(VDS = 50 Vdc, VGS = 0 Vdc)
IDSS
—
—
50
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 100 Vdc, VGS = 0 Vdc)
IDSS
—
—
2.5
mA
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 36 Adc)
VGS(th)
1
1.7
2.5
Vdc
Gate Quiescent Voltage
(VDD = 50 Vdc, ID = 10 mAdc, Measured in Functional Test)
VGS(Q)
1.7
2.4
3.2
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 70 mAdc)
VDS(on)
—
0.2
—
Vdc
Reverse Transfer Capacitance
(VDS = 50 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
0.1
—
pF
Output Capacitance
(VDS = 50 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
3.38
—
pF
Input Capacitance
(VDS = 50 Vdc, VGS = 0 Vdc  30 mV(rms)ac @ 1 MHz)
Ciss
—
9.55
—
pF
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 10 mA, Pout = 10 W Peak (2 W Avg.), f = 1090 MHz,
100 sec Pulse Width, 20% Duty Cycle
Power Gain
Gps
23
25
28
dB
Drain Efficiency
D
66
69
—
%
Input Return Loss
IRL
—
--12
--8
dB
MMRF1019NR4
2
RF Device Data
Freescale Semiconductor, Inc.
VBIAS
L1
VSUPPLY
+
C2
C3
C9
C12
R1
Z1
Z2
Z3
C5
C6
Z4
Z5
Z6
C1
C16
Z1
Z2
Z3
Z4
Z5
Z6
Z7
C7
C13
L2
R2
RF
INPUT
C8
Z8
C10
Z9
Z10
Z11
Z12
RF
OUTPUT
C14
Z7
C15
C11
DUT
C4
0.200 x 0.080 Microstrip
0.696 x 0.120 Microstrip
0.087 x 0.320 Microstrip
0.323 x 0.320 Microstrip
0.320 x 0.620 x 0.185 Taper
0.135 x 0.620 Microstrip
0.714 x 0.620 Microstrip
Z8
Z9
Z10
Z11
Z12
PCB
0.367 x 0.320 Microstrip
0.162 x 0.320 Microstrip
0.757 x 0.080 Microstip
0.763 x 0.080 Microstrip
0.290 x 0.080 Microstrip
Arlon CuClad 250GX--0300--55--22, 0.030, r = 2.55
Figure 2. MMRF1019NR4 Test Circuit Schematic
Table 6. MMRF1019NR4 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C9, C12
43 pF Chip Capacitors
ATC100B430JT500XT
ATC
C2
10 F, 35 V Tantalum Capacitor
T491D106K035AT
Kemet
C3, C8
2.2 F, 100 V Chip Capacitors
GQM1885C2A2R2CB01B
Murata
C4, C6
7.5 pF Chip Capacitors
ATC100B7R5CT500XT
ATC
C5, C16
3.0 pF Chip Capacitors
ATC100B3R0CT500XT
ATC
C7
0.1 F Chip Capacitor
C1206C104K5RACTR
Kemet
C10, C15
0.3 pF Chip Capacitors
ATC100B0R3BT500XT
ATC
C11
5.6 pF Chip Capacitor
ATC100B5R6CT500XT
ATC
C13
470 F, 63 V Chip Capacitor
477KXM063M
Illlinois Capacitor
C14
47 pF Chip Capacitor
ATC100B470JT500XT
ATC
L1
8 nH Inductor
A03TKLC
Coilcraft
L2
5 nH Inductor
A02TKLC
Coilcraft
R1
3300 , 1/4 W Chip Resistor
CRCW12063301FKEA
Vishay
R2
10 , 1/4 W Chip Resistor
CRCW120610R0FKEA
Vishay
MMRF1019NR4
RF Device Data
Freescale Semiconductor, Inc.
3
C2
C7
C3
L1
C12
R1
C1
C16
C5
C4
C6
C13
C8
C9
R2
C15
C10
C14
L2
C11
Figure 3. MMRF1019NR4 Test Circuit Component Layout
MMRF1019NR4
4
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
100
10
ID, DRAIN CURRENT (AMPS)
C, CAPACITANCE (pF)
Measured with 30 mV(rms)ac @ 1 MHz
VGS = 0 Vdc
Ciss
10
Coss
1
TJ = 200C
1
TJ = 175C
TJ = 150C
Crss
0.1
0
10
20
30
50
40
1
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain--Source Voltage
Figure 5. DC Safe Operating Area
45
70
25
65
D
24
60
23
55
VDD = 50 Vdc, IDQ = 10 mA, f = 1090 MHz
Pulse Width = 100 sec, Duty Cycle = 20%
22
5
7
6
8
9
10
D, DRAIN EFFICIENCY (%)
26
Pout, OUTPUT POWER (dBm) PULSED
75
Gps
Gps, POWER GAIN (dB)
100
10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
27
50
11
Ideal
P1dB = 40.18 dBm
(10.42 W)
Actual
40
VDD = 50 Vdc, IDQ = 10 mA, f = 1090 MHz
Pulse Width = 100 sec, Duty Cycle = 20%
13
14
15
16
17
18
19
Pout, OUTPUT POWER (WATTS) PEAK
Pin, INPUT POWER (dBm) PEAK
Figure 6. Power Gain and Drain Efficiency
versus Output Power
Figure 7. Output Power versus Input Power
Pout, OUTPUT POWER (WATTS) PULSED
14
25
23
50 V
45 V
21
40 V
35 V
19
17
P3dB = 40.66 dBm (11.65 W)
35
12
12
27
Gps, POWER GAIN (dB)
TC = 25C
0.1
IDQ = 10 mA, f = 1090 MHz
Pulse Width = 100 sec
Duty Cycle = 20%
VDD = 30 V
0
2
4
6
8
10
Pout, OUTPUT POWER (WATTS) PEAK
Figure 8. Power Gain versus Output Power
TC = --30_C
12
85_C
10
25_C
8
6
VDD = 50 Vdc
IDQ = 10 mA
f = 1090 MHz
Pulse Width = 100 sec
Duty Cycle = 20%
4
2
0
12
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
Pin, INPUT POWER (WATTS) PEAK
Figure 9. Output Power versus Input Power
MMRF1019NR4
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
29
80
D
70
27
60
26
TC = --30_C
25_C
25
40
85_C
Gps
24
23
50
30
20
VDD = 50 Vdc, IDQ = 10 mA, f = 1090 MHz
Pulse Width = 100 sec, Duty Cycle = 20%
22
0
2
4
6
8
10
D, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
28
10
12
14
Pout, OUTPUT POWER (WATTS) PEAK
Figure 10. Power Gain and Drain Efficiency versus
Output Power
109
MTTF (HOURS)
108
107
106
105
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 50 Vdc, Pout = 10 W Peak, Pulse Width = 100 sec,
Duty Cycle = 20%, and D = 69%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 11. MTTF versus Junction Temperature
MMRF1019NR4
6
RF Device Data
Freescale Semiconductor, Inc.
Zo = 50 
Zload
f = 1090 MHz
Zsource
f = 1090 MHz
VDD = 50 Vdc, IDQ = 10 mA, Pout = 10 W Peak
f
MHz
Zsource

Zload

1090
1.15 + j8.96
13.47 + j34.32
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 12. Series Equivalent Source and Load Impedance
MMRF1019NR4
RF Device Data
Freescale Semiconductor, Inc.
7
0.146
3.71
0.095
2.41
0.115
2.92
0.115
2.92
0.020
0.51
inches
mm
Figure 13. Solder Footprint for PLD--1.5
M1019
N ( ) B
AWLYWZ
Figure 14. Product Marking
MMRF1019NR4
8
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
MMRF1019NR4
RF Device Data
Freescale Semiconductor, Inc.
9
MMRF1019NR4
10
RF Device Data
Freescale Semiconductor, Inc.
MMRF1019NR4
RF Device Data
Freescale Semiconductor, Inc.
11
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following resources to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
 Electromigration MTTF Calculator
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software
& Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
July 2014
Description
 Initial Release of Data Sheet
MMRF1019NR4
12
RF Device Data
Freescale Semiconductor, Inc.
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E 2014 Freescale Semiconductor, Inc.
MMRF1019NR4
Document
Number:
RF Device
DataMMRF1019N
Rev.
0, 7/2014Semiconductor,
Freescale
Inc.
13