MBRS4201T3 200V, 4A Schottky Fast Soft-Recovery Power Rectifier SMC Power Surface Mount Package http://onsemi.com Features • Lower Forward Voltage than any Ultrafast Rectifier: • • • • VF < 0.61 V at 150°C Fast Switching Speed: Reverse Recovery Time (tRR) < 35 ns Soft Recovery Characteristics: Softness Factor (tb/ta) w 1 Highly Stable Over Temperature This is a Pb−Free Device SCHOTTKY RECTIFIER 4 AMPS, 200 VOLTS Benefits • • • • Significantly Reduced EMI Eliminates the Need of Snubber Circuits Low Switching and Heat Losses Improved Thermal Management Applications • Engine and Convenience Control Systems • Motor Controls • Battery Chargers and Switching Power Supplies SMC CASE 403 PLASTIC Mechanical Characteristics • • • • • • Small Compact Surface Mount Package with J–Bend Leads Rectangular Package for Automated Handling Weight: 217 mg (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Maximum for 10 Seconds Polarity: Notch in Plastic Body Indicates Cathode Lead MAXIMUM RATINGS Symbol Value Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Characteristic VRRM VRWM VR 200 Average Rectified Forward Current (Rated VR, TL = 70°C) IF(AV) 4 Nonrepetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 100 A TJ −55 to +150 °C Operating Junction Temperature Unit V A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. © Semiconductor Components Industries, LLC, 2008 August, 2008 − Rev. 4 1 MARKING DIAGRAM AYWW B421G G B421 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† MBRS4201T3G SMC (Pb−Free) 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: MBRS4201T3/D MBRS4201T3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Lead Symbol Value Unit RqJL 11 °C/W Symbol Value Unit ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage Maximum Instantaneous Reverse Current (Rated VR) Maximum Reverse Recovery Time 1.0 5.0 mA mA 35 ns 100 IF, FORWARD CURRENT (A) IF, FORWARD CURRENT (A) trr (IF = 1.0 A, di/dt = 100 A/ms, VR = 30 V) V 0.86 0.61 IR (Rated DC Voltage, TJ = 25°C) (Rated DC Voltage, TJ = 150°C) 100 10 150°C 25°C 100°C 1 0.1 10 150°C 1 25°C 100°C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0.2 1.1 1.2 0.3 VF, INSTANTANEOUS VOLTAGE (V) 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 Figure 2. Maximum Forward Voltage 1.0E−01 IR, MAXIMUM REVERSE CURRENT (A) 1E−1 1E−2 1.0E−02 150°C 1E−3 1E−4 TC = 150°C 1.0E−03 100°C 1E−5 TC = 25°C 1.0E−04 1E−6 1E−7 1.0E−05 25°C 1E−8 1E−9 0.4 VF, INSTANTANEOUS VOLTAGE (V) Figure 1. Typical Forward Voltage IR, REVERSE CURRENT (A) VF (IF = 4 A, TJ = 25°C) (IF = 4 A, TJ = 150°C) 0 20 40 60 80 1.0E−06 0 100 120 140 160 180200 20 40 60 80 100 120 140 160 180 200 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 4. Maximum Reverse Current Figure 3. Typical Reverse Current http://onsemi.com 2 MBRS4201T3 C, CAPACITANCE (pF) 1000 100 10 1 0 20 40 60 80 100 120 140 160 180 200 VR, REVERSE VOLTAGE (V) 6 5 DC 4 SQUAREWAVE 3 2 1 0 0 20 40 60 80 100 120 140 160 PFO, AVERAGE POWER DISSIPATION (W) 7 5.0 4.5 4.0 3.5 3.0 2.5 SQUAREWAVE 2.0 DC 1.5 1.0 0.5 0 0 1 2 3 4 TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT Figure 6. Derating Curve Figure 7. Power Dissipation 2.5 2.0 1.5 I, CURRENT (A) IF, AVERAGE FORWARD CURRENT (A) Figure 5. Typical Capacitance 1.0 200 V Ultrafast MBRS4201 0.5 5 ON Semiconductor MBRS4201 eliminates reverse recovery oscillations present in Ultrafast devices in the market, particularly at hot temperatures. *Test Conditions: IF = 1 A, dI/dT = 100 A/ms, VR = 30 V 0 −0.5 −1.0 −1.5 −2.0 −2.5 T, TIME (10 ns/div) Figure 8. Reverse Recovery Time* (tRR) at 1255C http://onsemi.com 3 6 MBRS4201T3 PACKAGE DIMENSIONS SMC CASE 403−03 ISSUE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. 4. 403-01 THRU -02 OBSOLETE, NEW STANDARD 403-03. HE E b DIM A A1 b c D E HE L L1 D MIN 1.90 0.05 2.92 0.15 5.59 6.60 7.75 0.76 MILLIMETERS NOM MAX 2.13 2.41 0.10 0.15 3.00 3.07 0.23 0.30 5.84 6.10 6.86 7.11 7.94 8.13 1.02 1.27 0.51 REF MIN 0.075 0.002 0.115 0.006 0.220 0.260 0.305 0.030 INCHES NOM 0.084 0.004 0.118 0.009 0.230 0.270 0.313 0.040 0.020 REF MAX 0.095 0.006 0.121 0.012 0.240 0.280 0.320 0.050 A L L1 c A1 SOLDERING FOOTPRINT* 4.343 0.171 3.810 0.150 2.794 0.110 SCALE 4:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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