MBRS4201T3G, NRVBS4201T3G 200V, 4A Schottky Fast Soft-Recovery Power Rectifier http://onsemi.com SMC Power Surface Mount Package Features Lower Forward Voltage than any Ultrafast Rectifier: VF < 0.61 V at 150C Fast Switching Speed: Reverse Recovery Time (tRR) < 35 ns Soft Recovery Characteristics: Softness Factor (tb/ta) 1 Highly Stable Over Temperature AEC−Q101 Qualified and PPAP Capable NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These are Pb-Free Packages* SCHOTTKY RECTIFIER 4 AMPS, 200 VOLTS SMC CASE 403 PLASTIC Benefits Significantly Reduced EMI Eliminates the Need of Snubber Circuits Low Switching and Heat Losses Improved Thermal Management MARKING DIAGRAM AYWW B421G G Applications Engine and Convenience Control Systems Motor Controls Battery Chargers and Switching Power Supplies Mechanical Characteristics Small Compact Surface Mount Package with J–Bend Leads Rectangular Package for Automated Handling Weight: 217 mg (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Maximum for 10 Seconds ESD Ratings: Machine Model = A Human Body Model = 1C Polarity: Notch in Plastic Body Indicates Cathode Lead B421 A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† MBRS4201T3G SMC (Pb−Free) 2,500 / Tape & Reel NRVBS4201T3G SMC (Pb−Free) 2,500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2012 January, 2012 − Rev. 5 1 Publication Order Number: MBRS4201T3/D MBRS4201T3G, NRVBS4201T3G MAXIMUM RATINGS Symbol Value Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Characteristic VRRM VRWM VR 200 Average Rectified Forward Current (Rated VR, TL = 70C) IF(AV) Nonrepetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Operating Junction Temperature TJ 4 100 −55 to +150 Unit V A A C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Lead Symbol Value Unit RqJL 11 C/W Symbol Value Unit ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (IF = 4 A, TJ = 25C) (IF = 4 A, TJ = 150C) VF Maximum Instantaneous Reverse Current (Rated VR) (Rated DC Voltage, TJ = 25C) (Rated DC Voltage, TJ = 150C) IR Maximum Reverse Recovery Time (IF = 1.0 A, di/dt = 100 A/ms, VR = 30 V) trr http://onsemi.com 2 0.86 0.61 V 1.0 5.0 mA mA 35 ns MBRS4201T3G, NRVBS4201T3G 100 IF, FORWARD CURRENT (A) IF, FORWARD CURRENT (A) 100 10 150C 25C 100C 1 0.1 150C 1 25C 100C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 VF, INSTANTANEOUS VOLTAGE (V) VF, INSTANTANEOUS VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1.2 1.0E−01 IR, MAXIMUM REVERSE CURRENT (A) 1E−2 1.0E−02 150C 1E−3 1E−4 TC = 150C 1.0E−03 100C 1E−5 TC = 25C 1.0E−04 1E−6 1E−7 1.0E−05 25C 1E−8 0 20 40 60 80 1.0E−06 0 100 120 140 160 180200 20 40 60 80 VR, REVERSE VOLTAGE (V) 100 10 0 20 40 60 120 140 160 180 200 Figure 4. Maximum Reverse Current 1000 1 100 VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current C, CAPACITANCE (pF) 1E−9 0.2 1.1 1.2 1E−1 IR, REVERSE CURRENT (A) 10 80 100 120 140 160 180 200 VR, REVERSE VOLTAGE (V) Figure 5. Typical Capacitance http://onsemi.com 3 6 5 DC 4 SQUAREWAVE 3 2 1 0 0 20 40 60 80 100 120 140 160 PFO, AVERAGE POWER DISSIPATION (W) 7 5.0 4.5 4.0 3.5 3.0 2.5 SQUAREWAVE 2.0 DC 1.5 1.0 0.5 0 0 1 2 3 4 5 TL, LEAD TEMPERATURE (C) IO, AVERAGE FORWARD CURRENT Figure 6. Derating Curve Figure 7. Power Dissipation 2.5 2.0 1.5 I, CURRENT (A) IF, AVERAGE FORWARD CURRENT (A) MBRS4201T3G, NRVBS4201T3G 1.0 200 V Ultrafast MBRS4201 0.5 ON Semiconductor MBRS4201 eliminates reverse recovery oscillations present in Ultrafast devices in the market, particularly at hot temperatures. *Test Conditions: IF = 1 A, dI/dT = 100 A/ms, VR = 30 V 0 −0.5 −1.0 −1.5 −2.0 −2.5 T, TIME (10 ns/div) Figure 8. Reverse Recovery Time* (tRR) at 1255C http://onsemi.com 4 6 MBRS4201T3G, NRVBS4201T3G PACKAGE DIMENSIONS SMC CASE 403−03 ISSUE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. 4. 403-01 THRU -02 OBSOLETE, NEW STANDARD 403-03. HE E b DIM A A1 b c D E HE L L1 D MIN 1.90 0.05 2.92 0.15 5.59 6.60 7.75 0.76 MILLIMETERS NOM MAX 2.13 2.41 0.10 0.15 3.00 3.07 0.23 0.30 5.84 6.10 6.86 7.11 7.94 8.13 1.02 1.27 0.51 REF MIN 0.075 0.002 0.115 0.006 0.220 0.260 0.305 0.030 INCHES NOM 0.084 0.004 0.118 0.009 0.230 0.270 0.313 0.040 0.020 REF MAX 0.095 0.006 0.121 0.012 0.240 0.280 0.320 0.050 A L L1 c A1 SOLDERING FOOTPRINT* 4.343 0.171 3.810 0.150 2.794 0.110 SCALE 4:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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