NSR01F30MX Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current. Features • Very Low Forward Voltage Drop − 350 mV @ 10 mA Low Reverse Current − 5 mA @ 10 V 100 mA of Continuous Forward Current ESD Rating − Human Body Model: Class 3B ESD Rating − Machine Model: Class C These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • • • • • LCD and Keypad Backlighting Camera Photo Flash Buck and Boost dc−dc Converters Reverse Voltage and Current Protection Clamping & Protection www.onsemi.com 30 V SCHOTTKY BARRIER DIODE 1 CATHODE 2 ANODE MARKING DIAGRAM PIN 1 X3DFN2 CASE 152AF F • • • • M Markets • • • • • F Mobile Handsets MP3 Players Digital Camera and Camcorders Notebook PCs & PDAs GPS M ORDERING INFORMATION Device MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 30 V Forward Current (DC) IF 100 mA Forward Surge Current IFSM (60 Hz @ 1 cycle) ESD Rating: Human Body Model Machine Model = Specific Device Code (Rotated 180°) = Date Code A Package Shipping† NSR01F30MXT5G X3DFN2 (Pb−Free) 10000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 2.0 ESD >8.0 >400 kV V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2016 April, 2016 − Rev. 4 1 Publication Order Number: NSR01F30MX/D NSR01F30MX THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C RqJA PD Storage Temperature Range Tstg Junction Temperature Range TJ Min Typ Max Unit 695 180 °C/W mW −40 +125 °C −40 +125 °C Max Unit 1. Mounted onto a 4 in square FR−4 board 100 mm sq. 2 oz. Cu 0.06” thick single−sided. Operating to steady state. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Reverse Leakage (VR = 10 V) (VR = 30 V) IR Forward Voltage (IF = 10 mA) (IF = 100 mA) VF Total Capacitance (VR = 10 V, f = 1 MHz) CT Min Typ mA 5 50 V 0.35 0.60 0.90 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 NSR01F30MX TYPICAL CHARACTERISTICS 1.0E−02 1.0E−03 125°C 1.0E−04 85°C Ir, REVERSE CURRENT (A) 10 1.0E−05 125°C 1 1.0E−07 25°C −25°C 0 0.1 −25°C 1.0E−08 75°C 0.1 25°C 1.0E−06 0.2 1.0E−09 0.3 0.4 0.5 0.6 0 5 10 15 20 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 1. Forward Voltage Figure 2. Leakage Current 3.0 CT, TOTAL CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 TA = 25°C 2.5 2.0 1.5 1.0 0.5 0 0 5 10 15 20 VR, REVERSE VOLTAGE (V) Figure 3. Total Capacitance www.onsemi.com 3 25 30 25 30 NSR01F30MX PACKAGE DIMENSIONS X3DFN2, 0.62x0.32, 0.355P, (0201) CASE 152AF ISSUE A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. A B D PIN 1 INDICATOR (OPTIONAL) DIM A A1 b D E e L2 E TOP VIEW 0.05 C A RECOMMENDED MOUNTING FOOTPRINT* 0.05 C 2X A1 SIDE VIEW MILLIMETERS MIN MAX 0.25 0.33 −−− 0.05 0.22 0.28 0.58 0.66 0.28 0.36 0.355 BSC 0.17 0.23 C SEATING PLANE 0.74 2X 0.30 1 e 2X 1 b 2 2X 0.31 DIMENSIONS: MILLIMETERS 2X 0.05 M 0.05 L2 M C A B See Application Note AND8398/D for more mounting details C A B BOTTOM VIEW *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. 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