ESD7382MUT5G ESD Protection Diodes Micro−Packaged Diodes for ESD Protection The ESD7382 is designed to protect voltage sensitive components that require ultra−low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Because of its low capacitance, it is suited for use in high frequency designs such as USB 2.0 high speed and antenna line applications. www.onsemi.com 1 Cathode 2 Anode Features Ultra−Low Capacitance: 0.37 pF Low Clamping Voltage Small Body Outline Dimensions: 0.60 mm x 0.30 mm Low Body Height: 0.3 mm Stand−off Voltage: 5.0 V Low Leakage Insertion Loss: 0.030 dBm Response Time is < 1 ns Low Dynamic Resistance < 1 W IEC61000−4−2 Level 4 ESD Protection These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • RF Signal ESD Protection • RF Switching, PA, and Antenna ESD Protection • Near Field Communications MARKING DIAGRAM PIN 1 X3DFN2 CASE 152AF 2 M 2 • • • • • • • • • • • M = Specific Device Code (Rotated 270°) = Date Code ORDERING INFORMATION Device Package Shipping† ESD7382MUT5G X3DFN2 (Pb−Free) 15000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MAXIMUM RATINGS Rating IEC 61000−4−2 (ESD) Symbol Contact Air Value Unit ±20 ±20 kV Total Power Dissipation on FR−5 Board (Note 1) @ TA = 25°C Thermal Resistance, Junction−to−Ambient °PD° 250 mW RqJA 400 °C/W Junction and Storage Temperature Range TJ, Tstg −40 to +125 °C TL 260 °C Lead Solder Temperature − Maximum (10 Second Duration) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.62 in. See Application Note AND8308/D for further description of survivability specs. © Semiconductor Components Industries, LLC, 2016 April, 2016 − Rev. 0 1 Publication Order Number: ESD7382/D ESD7382MUT5G ELECTRICAL CHARACTERISTICS I (TA = 25°C unless otherwise noted) IF Parameter Symbol IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR V IR VF IT Maximum Reverse Leakage Current @ VRWM VBR IT VC VBR VRWM Working Peak Reverse Voltage Breakdown Voltage @ IT Test Current *See Application Note AND8308/D for detailed explanations of datasheet parameters. IPP Uni−Directional TVS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Reverse Working Voltage Breakdown Voltage (Note 2) Symbol Conditions Min Typ Max Unit 5.0 V VRWM VBR IT = 1 mA 5.2 V Reverse Leakage Current IR VRWM = 5.0 V 1.0 mA Clamping Voltage (Note 3) VC IPP = 1 A 8.0 V Clamping Voltage (Note 3) VC IPP = 3 A 10 V ESD Clamping Voltage VC Per IEC61000−4−2 See Figures 1 and 2 Junction Capacitance CJ VR = 0 V, f = 1 Mhz VR = 0 V, f < 1 GHz 0.37 0.25 0.55 0.55 pF Dynamic Resistance RDYN TLP Pulse 0.32 W f = 1 Mhz f = 8.5 GHz 0.030 0.573 dB Insertion Loss 2. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1. 3. Non−repetitive current pulse at TA = 25°C, per IEC61000−4−5 waveform. Figure 1. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC61000−4−2 Figure 2. ESD Clamping Voltage Screenshot Negative 8 kV Contact per IEC61000−4−2 www.onsemi.com 2 ESD7382MUT5G 1.E−02 2.0 1.E−03 1.8 1.E−04 1.6 1.4 1.E−05 I1 (A) C (pF) 1.E−06 1.E−07 1.E−08 1.2 1.0 0.8 0.6 1.E−09 0.4 1.E−10 0.2 1.E−11 −1 0 1 2 3 4 5 6 7 8 0 0 9 0.5 1 1.5 V1 (V) 2 2.5 3 3.5 4 VBias (V) Figure 3. IV Characteristics Figure 4. CV Characteristics 1 0.6 0 0.5 −1 CAPACITANCE (pF) −2 dB −3 −4 −5 −6 −7 −8 0.4 0.3 3.3 V 0V 0.2 0.1 −9 −10 1.E+06 1.E+07 1.E+08 1.E+09 0.0 0.E+00 1.E+10 5.E+08 1.E+09 FREQUENCY (Hz) 2.E+09 3.E+09 3.E+09 FREQUENCY Figure 5. RF Insertion Loss Figure 6. Capacitance over Frequency 35 −35 30 −30 25 −25 CURRENT (A) CURRENT (A) 2.E+09 20 15 −20 −15 10 −10 5 −5 0 0 0 2 4 6 8 10 12 14 16 0 18 −2 −4 −6 −8 −10 −12 VOLTAGE (V) VOLTAGE (V) Figure 7. Positive TLP I−V Curve Figure 8. Negative TLP I−V Curve www.onsemi.com 3 −14 ESD7382MUT5G IEC61000−4−2 Waveform IEC 61000−4−2 Spec. Ipeak Level Test Voltage (kV) First Peak Current (A) Current at 30 ns (A) Current at 60 ns (A) 1 2 7.5 4 2 2 4 15 8 4 3 6 22.5 12 6 4 8 30 16 8 100% 90% I @ 30 ns I @ 60 ns 10% tP = 0.7 ns to 1 ns Figure 9. IEC61000−4−2 Spec ESD Gun Oscilloscope TVS 50 W Cable 50 W Figure 10. Diagram of ESD Test Setup ESD Voltage Clamping at the device level. ON Semiconductor has developed a way to examine the entire voltage waveform across the ESD protection diode over the time domain of an ESD pulse in the form of an oscilloscope screenshot, which can be found on the datasheets for all ESD protection diodes. For more information on how ON Semiconductor creates these screenshots and how to interpret them please refer to AND8307/D. For sensitive circuit elements it is important to limit the voltage that an IC will be exposed to during an ESD event to as low a voltage as possible. The ESD clamping voltage is the voltage drop across the ESD protection diode during an ESD event per the IEC61000−4−2 waveform. Since the IEC61000−4−2 was written as a pass/fail spec for larger systems such as cell phones or laptop computers it is not clearly defined in the spec how to specify a clamping voltage % OF PEAK PULSE CURRENT 100 PEAK VALUE IRSM @ 8 ms tr 90 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 80 70 60 HALF VALUE IRSM/2 @ 20 ms 50 40 30 tP 20 10 0 0 20 40 t, TIME (ms) 60 Figure 11. 8 X 20 ms Pulse Waveform www.onsemi.com 4 80 ESD7382MUT5G PACKAGE DIMENSIONS X3DFN2, 0.62x0.32, 0.355P, (0201) CASE 152AF ISSUE A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. A B D PIN 1 INDICATOR (OPTIONAL) DIM A A1 b D E e L2 E TOP VIEW 0.05 C MILLIMETERS MIN MAX 0.25 0.33 −−− 0.05 0.22 0.28 0.58 0.66 0.28 0.36 0.355 BSC 0.17 0.23 A 0.05 C 2X A1 SIDE VIEW C RECOMMENDED MOUNTING FOOTPRINT* SEATING PLANE 0.74 e 2X 1 1 b 2 2X 2X 0.05 M 2X 0.30 0.05 L2 M C A B 0.31 DIMENSIONS: MILLIMETERS C A B See Application Note AND8398/D for more mounting details BOTTOM VIEW *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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