SiS426DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice, these values have matching characteristic curves to the single-pulse transient thermal impedance curves for the MOSFET. These RC values can be used in the P-SPICE simulation to evaluate the thermal behavior of the MOSFET junction temperature under a defined power profile. These techniques are described in Application Note AN609, "Thermal Simulation of Power MOSFETs on the P-Spice Platform." R-C THERMAL MODEL FOR TANK CONFIGURATION R-C VALUES FOR TANK CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Case Foot RT1 2.0752 436.3797 m N/A RT2 10.4848 1.8878 N/A RT3 11.9173 44.3824 m N/A RT4 56.5227 31.4379 m N/A Thermal Capacitance (Joules/°C) Junction to Ambient Case Foot CT1 743.6434 u 1.1671 m N/A CT2 18.2640 m 6.7675 m N/A CT3 134.5249 m 13.3568 m N/A CT4 1.2297 4.5861 m N/A This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 68851 Revision: 16-Jul-08 www.vishay.com 1 SiS426DN_RC Vishay Siliconix R-C THERMAL MODEL FOR FILTER CONFIGURATION R-C VALUES FOR FILTER CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Case Foot RF1 2.2732 567.8955 m N/A RF2 12.3449 999.8448 m N/A RF3 12.5493 785.7268 m N/A RF4 53.8326 46.5329 m N/A Thermal Capacitance (Joules/°C) Junction to Ambient Case Foot CF1 809.6000 u 721.2225 u N/A CF2 13.8940 m 4.2291 m N/A CF3 103.8667 m 8.9075 m N/A CF4 1.1730 474.0288 m N/A Note NA indicates not applicable www.vishay.com 2 Document Number: 68851 Revision: 16-Jul-08 SiS426DN_RC Vishay Siliconix Document Number: 68851 Revision: 16-Jul-08 www.vishay.com 3