IPN60R3K4CE MOSFET 600VCoolMOSªCEPowerTransistor PG-SOT223 CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™CEisa price-performanceoptimizedplatformenablingtotargetcostsensitive applicationsinConsumerandLightingmarketsbystillmeetinghighest efficiencystandards.Thenewseriesprovidesallbenefitsofafast switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand offeringthebestcostdownperformanceratioavailableonthemarket. Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforstandardgradeapplications Drain Pin 2 Gate Pin 1 Applications Source Pin 3 Adapter,ChargerandLighting Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 3.4 Ω Qg,typ 4.6 nC ID,pulse 3.9 A Eoss@400V 0.57 µJ Body diode di/dt 500 A/µs Type/OrderingCode Package Marking IPN60R3K4CE PG-SOT223 60S3K4 Final Data Sheet 1 RelatedLinks see Appendix A Rev.2.0,2016-04-29 600VCoolMOSªCEPowerTransistor IPN60R3K4CE TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.0,2016-04-29 600VCoolMOSªCEPowerTransistor IPN60R3K4CE 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 2.6 1.6 A TC = 25°C TC = 100°C - 3.9 A TC = 25°C - - 6 mJ ID = 0.3A; VDD = 50V EAR - - 0.04 mJ ID = 0.3A; VDD = 50V Avalanche current, repetitive IAR - - 0.3 A - MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...480V Gate source voltage VGS -20 -30 - 20 30 V static; AC (f>1 Hz) Power dissipation Ptot - - 5.0 W TC=25°C Operating and storage temperature Tj,Tstg -40 - 150 °C - Continuous diode forward current IS - - 0.8 A TC=25°C IS,pulse - - 3.9 A TC = 25°C dv/dt - - 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°C dif/dt - - 500 A/µs VDS=0...400V,ISD<=IS,Tj=25°C Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse EAS Avalanche energy, repetitive 2) Diode pulse current 3) Reverse diode dv/dt 3) Maximum diode commutation speed 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - solder point Values Unit Note/TestCondition Min. Typ. Max. RthJS - - 25.2 °C/W - Thermal resistance, junction - ambient RthJA for minimal footprint - - 160 °C/W minimal footprint Thermal resistance, junction - ambient RthJA soldered on copper area - - 75 Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer 70µm °C/W thick) copper area for drain connection and cooling. PCB is vertical without blown air. Soldering temperature, wavesoldering only allowed at leads - - 260 °C Tsold reflow MSL3 1) DPAK equivalent. Limited by Tj max. Maximum duty cycle D=0.5 Pulse width tp limited by Tj,max 3) VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG 2) Final Data Sheet 3 Rev.2.0,2016-04-29 600VCoolMOSªCEPowerTransistor IPN60R3K4CE 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=0.25mA 3 3.50 V VDS=VGS,ID=0.04mA - 10 1 - µA VDS=600V,VGS=0V,Tj=25°C VDS=600V,VGS=0V,Tj=150°C IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 3.06 7.96 3.40 - Ω VGS=10V,ID=0.5A,Tj=25°C VGS=10V,ID=0.5A,Tj=150°C Gate resistance RG - 15 - Ω f=1MHz,opendrain Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 600 - Gate threshold voltage VGS(th) 2.50 Zero gate voltage drain current IDSS Gate-source leakage curent Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 93 - pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 9 - pF VGS=0V,VDS=100V,f=1MHz Effective output capacitance, energy related1) Co(er) - 6.4 - pF VGS=0V,VDS=0...480V Effective output capacitance, time related2) Co(tr) - 21 - pF ID=constant,VGS=0V,VDS=0...480V Turn-on delay time td(on) - 8 - ns VDD=400V,VGS=13V,ID=0.6A, RG=20Ω Rise time tr - 10 - ns VDD=400V,VGS=13V,ID=0.6A, RG=20Ω Turn-off delay time td(off) - 40 - ns VDD=400V,VGS=13V,ID=0.6A, RG=20Ω Fall time tf - 60 - ns VDD=400V,VGS=13V,ID=0.6A, RG=20Ω Unit Note/TestCondition Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 0.5 - nC VDD=480V,ID=0.6A,VGS=0to10V Gate to drain charge Qgd - 2.6 - nC VDD=480V,ID=0.6A,VGS=0to10V Gate charge total Qg - 4.6 - nC VDD=480V,ID=0.6A,VGS=0to10V Gate plateau voltage Vplateau - 5.4 - V VDD=480V,ID=0.6A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to480V Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to480V 2) Final Data Sheet 4 Rev.2.0,2016-04-29 600VCoolMOSªCEPowerTransistor IPN60R3K4CE Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition - V VGS=0V,IF=0.6A,Tf=25°C 160 - ns VR=400V,IF=0.6A,diF/dt=100A/µs - 0.42 - µC VR=400V,IF=0.6A,diF/dt=100A/µs - 5.1 - A VR=400V,IF=0.6A,diF/dt=100A/µs Min. Typ. Max. VSD - 0.9 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 5 Rev.2.0,2016-04-29 600VCoolMOSªCEPowerTransistor IPN60R3K4CE 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Safeoperatingarea 101 6 1 µs 10 µs 5 100 100 µs 1 ms 4 ID[A] Ptot[W] 10 ms 3 10 DC -1 2 10-2 1 0 0 25 50 75 100 125 10-3 150 100 101 TC[°C] 102 103 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 1 102 10 1 µs 0.5 10 µs 100 101 0.2 100 µs -1 10 0.1 ZthJC[K/W] ID[A] 1 ms 10 ms DC 0.05 10 0 0.02 0.01 single pulse 10-2 10-3 10-1 100 101 102 103 10-2 10-5 10-4 10-3 VDS[V] 10-1 100 101 tp[s] ID=f(VDS);TC=80°C;D=0;parameter:tp Final Data Sheet 10-2 ZthJC=f(tP);parameter:D=tp/T 6 Rev.2.0,2016-04-29 600VCoolMOSªCEPowerTransistor IPN60R3K4CE Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 4.5 3.0 20 V 10 V 4.0 20 V 10 V 8V 2.5 3.5 8V 2.0 2.5 7V ID[A] ID[A] 3.0 2.0 1.5 1.5 6V 1.0 6V 1.0 7V 5.5 V 5V 5.5 V 0.5 4.5 V 5V 0.5 4.5 V 0.0 0 5 10 15 0.0 20 0 5 10 VDS[V] 15 20 VDS[V] ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance 9.0 9 6V 5V 8.5 5.5 V 7V 10 V 8 6.5 V 7 8.0 6 RDS(on)[Ω] RDS(on)[Ω] 7.5 7.0 5 typ 98% 4 6.5 3 6.0 2 5.5 5.0 1 0 1 2 3 0 -50 -25 0 25 ID[A] RDS(on)=f(ID);Tj=125°C;parameter:VGS Final Data Sheet 50 75 100 125 150 Tj[°C] RDS(on)=f(Tj);ID=0.5A;VGS=10V 7 Rev.2.0,2016-04-29 600VCoolMOSªCEPowerTransistor IPN60R3K4CE Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge 5.0 10 4.5 9 4.0 8 120 V 25 °C 3.5 7 480 V 6 VGS[V] ID[A] 3.0 2.5 2.0 5 4 150 °C 1.5 3 1.0 2 0.5 1 0.0 0 2 4 6 8 10 0 12 0 1 VGS[V] 2 3 4 5 125 150 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=0.6Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy 2 10 7 25 °C 125 °C 6 5 IF[A] EAS[mJ] 101 4 3 100 2 1 10-1 0.0 0.5 1.0 1.5 2.0 0 25 50 VSD[V] 100 Tj[°C] IF=f(VSD);parameter:Tj Final Data Sheet 75 EAS=f(Tj);ID=0.3A;VDD=50V 8 Rev.2.0,2016-04-29 600VCoolMOSªCEPowerTransistor IPN60R3K4CE Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances 104 700 680 103 660 640 Ciss 620 C[pF] VBR(DSS)[V] 102 600 101 Coss 580 Crss 560 100 540 520 -75 -50 -25 0 25 50 75 100 125 150 175 10-1 0 100 Tj[°C] 200 300 400 500 VDS[V] VBR(DSS)=f(Tj);ID=0.25mA C=f(VDS);VGS=0V;f=1MHz Diagram15:Typ.Cossstoredenergy 1.2 1.0 Eoss[µJ] 0.8 0.6 0.4 0.2 0.0 0 100 200 300 400 500 600 VDS[V] Eoss=f(VDS) Final Data Sheet 9 Rev.2.0,2016-04-29 600VCoolMOSªCEPowerTransistor IPN60R3K4CE 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform V ,I Rg1 VDS( peak) VDS VDS VDS trr IF Rg 2 tF tS dIF / dt IF QF IF dIrr / dt trr =tF +tS Qrr = QF + QS Irrm Rg1 = Rg 2 t 10 %Irrm QS Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) ton tr td(off) tf toff Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS Final Data Sheet 10 ID VDS Rev.2.0,2016-04-29 600VCoolMOSªCEPowerTransistor IPN60R3K4CE 6PackageOutlines DOCUMENT NO. Z8B00180553 SCALE DIM A A1 A2 b b2 c D E E1 e e1 L N O MILLIMETERS MIN MAX 1.52 1.80 0.10 1,50 1.70 0.60 0.80 2.95 3.10 0.24 0.32 6.30 6.70 6.70 7.30 3.30 3.70 2.3 BASIC 4.6 BASIC 0.75 1.10 3 0 INCHES MIN 0.060 0.059 0.024 0.116 0.009 0.248 0.264 0.130 MAX 0.071 0.004 0.067 0.031 0.122 0.013 0.264 0.287 0.146 0.091 BASIC 0.181 BASIC 0.030 0.043 3 2.5 0 2.5 5mm EUROPEAN PROJECTION ISSUE DATE 24-02-2016 REVISION 01 Figure1OutlinePG-SOT223,dimensionsinmm/inches Final Data Sheet 11 Rev.2.0,2016-04-29 600VCoolMOSªCEPowerTransistor IPN60R3K4CE 7AppendixA Table11RelatedLinks • IFXCoolMOSWebpage:www.infineon.com • IFXDesigntools:www.infineon.com Final Data Sheet 12 Rev.2.0,2016-04-29 600VCoolMOSªCEPowerTransistor IPN60R3K4CE RevisionHistory IPN60R3K4CE Revision:2016-04-29,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2016-04-29 Release of final version TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 13 Rev.2.0,2016-04-29