MBRS240LT3 D

MBRS240LT3G,
NRVBS240LT3G
Surface Mount
Schottky Power Rectifier
SMB Power Surface Mount Package
http://onsemi.com
These devices employ the Schottky Barrier principle in a
metal−to−silicon power rectifier. Features epitaxial construction with
oxide passivation and metal overlay contact. Ideally suited for low
voltage, high frequency switching power supplies; free wheeling
diodes and polarity protection diodes.
SCHOTTKY BARRIER
RECTIFIER
2.0 AMPERES, 40 VOLTS
Features
•
•
•
•
•
•
•
Compact Package with J−Bend Leads Ideal for Automated Handling
Highly Stable Oxide Passivated Junction
Guard−Ring for Overvoltage Protection
Low Forward Voltage Drop
ESD Ratings:
♦ Human Body Model = 3B (> 16000 V)
♦ Machine Model = C (> 400 V)
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
All Packages are Pb−Free*
Mechanical Characteristics
•
•
•
•
•
•
Case: Molded Epoxy
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 95 mg (Approximately)
Cathode Polarity Band
Maximum Temperature of 260°C/10 Seconds for Soldering
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
SMB
CASE 403A
MARKING DIAGRAM
AYWW
2BL4G
G
2BL4
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Package
Shipping†
MBRS240LT3G
SMB
(Pb−Free)
2,500 /
Tape & Reel
NRVBS240LT3G
SMB
(Pb−Free)
2,500 /
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
April, 2013 − Rev. 7
1
Publication Order Number:
MBRS240LT3/D
MBRS240LT3G, NRVBS240LT3G
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated VR, TC = 100°C)
Symbol
Value
Unit
VRRM
VRWM
VR
40
V
IO
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 20 kHz, TC = 105°C)
IFRM
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
Storage Temperature
Operating Junction Temperature
Voltage Rate of Change
(Rated VR, TJ = 25°C)
2.0
4.0
25
A
A
A
Tstg, TC
−55 to +150
°C
TJ
−55 to +150
°C
dv/dt
10,000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 2)
Symbol
Value
Unit
RqJL
RqJA
18
78
°C/W
1. Mounted with minimum recommended pad size, PC Board FR4.
2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Maximum Instantaneous Forward Voltage (Note 3)
see Figure 2
(IF = 2.0 A)
(IF = 4.0 A)
VF
Maximum Instantaneous Reverse Current (Note 3)
see Figure 4
(VR = 40 V)
(VR = 20 V)
IR
3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%.
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2
Value
Unit
TJ = 25°C
TJ = 125°C
0.43
0.54
0.375
0.55
TJ = 25°C
TJ = 100°C
2.0
0.5
60
40
V
mA
MBRS240LT3G, NRVBS240LT3G
i F, INSTANTANEOUS FORWARD CURRENT (AMPS)
i F, INSTANTANEOUS FORWARD CURRENT (AMPS)
TYPICAL CHARACTERISTICS
10
1
TJ = 125°C
25°C
85°C
-40°C
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
TJ = 125°C
85°C 25°C
-40°C
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
0.8
100E-3
IR , MAXIMUM REVERSE CURRENT (AMPS)
IR , REVERSE CURRENT (AMPS)
1
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
100E-3
TJ = 125°C
10E-3
85°C
1.0E-3
100°C
10E-3
1.0E-3
25°C
100E-6
100E-6
25°C
10E-6
10
10E-6
0
10
20
30
40
0
10
20
30
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
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3
40
MBRS240LT3G, NRVBS240LT3G
PFO , AVERAGE POWER DISSIPATION (WATTS)
IO , AVERAGE FORWARD CURRENT (AMPS)
TYPICAL CHARACTERISTICS
3.5
3.0
Freq = 20 kHz
RqJL = 18°C/W
dc
2.5
2.0
SQUARE WAVE
1.5
1.0
0.5
0
100
110
120
140
130
1.6
dc
1.4
SQUARE WAVE
Ipk/Io = p
1.2
Ipk/Io = 5.0
1.0
Ipk/Io = 10
0.8
Ipk/Io = 20
0.6
0.4
0.2
0
0
150
0.5
1.0
2.0
1.5
2.5
3.0
TL, LEAD TEMPERATURE (°C)
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
3.5
1000
1000
SURGE CURRENT (AMPS)
C, CAPACITANCE (pF)
TJ = 25°C
100
10
100
1.0
R T, TRANSIENT THERMAL RESISTANCE (NORMALIZED)
0
1.0E+00
1.0E-01
1.0E-02
5.0
10
15
20
25
30
35
10
40
10
1.0
100
1000
VR, REVERSE VOLTAGE (VOLTS)
PULSE WIDTH (mSEC)
Figure 7. Capacitance
Figure 8. Maximum Non−Repetitive
Forward Surge Current
10000
50%
20%
10%
5.0%
2.0%
1.0%
1.0E-03
Rtjl(t) = Rtjl*r(t)
1.0E-04
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
Figure 9. Thermal Response
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4
1.0
10
100
1000
MBRS240LT3G, NRVBS240LT3G
PACKAGE DIMENSIONS
SMB
CASE 403A−03
ISSUE H
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.
E
b
DIM
A
A1
b
c
D
E
HE
L
L1
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
MIN
1.90
0.05
1.96
0.15
3.30
4.06
5.21
0.76
MILLIMETERS
NOM
MAX
2.20
2.28
0.10
0.19
2.03
2.20
0.23
0.31
3.56
3.95
4.32
4.60
5.44
5.60
1.02
1.60
0.51 REF
MIN
0.075
0.002
0.077
0.006
0.130
0.160
0.205
0.030
INCHES
NOM
0.087
0.004
0.080
0.009
0.140
0.170
0.214
0.040
0.020 REF
MAX
0.090
0.007
0.087
0.012
0.156
0.181
0.220
0.063
A
L
L1
A1
c
SOLDERING FOOTPRINT*
2.261
0.089
2.743
0.108
2.159
0.085
SCALE 8:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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MBRS240LT3/D