BYW172D / 172F / 172G VISHAY Vishay Semiconductors Fast Avalanche Sinterglass Diode Features • • • • Glass passivated junction Hermetically sealed package Soft recovery characteristics Low reverse current 949588 Mechanical Data • Low forward voltage drop • High pulse current capability Case: SOD-64 Sintered glass case Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: approx. 858 mg Applications Fast rectification diode in S.M.P.S Parts Table Part Type differentiation Package BYW172D VR = 200 V; IFAV = 3 A SOD-64 BYW172F VR = 300 V; IFAV = 3 A SOD-64 BYW172G VR = 400 V; IFAV = 3 A SOD-64 Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Reverse voltage = Repetitive peak reverse voltage Peak forward surge current Test condition see electrical characteristics Part Symbol Value Unit BYW172D VR = VRRM 200 V BYW172F VR = VRRM 300 V BYW172G VR = VRRM 400 V IFSM 100 A IFAV 3 A Tj = Tstg - 55 to + 175 °C ER 20 mJ tp = 10 ms, single half sine wave Average forward current Junction and storage temperature range Non repetitive reverse avalanche energy I(BR)R = 1 A Maximum Thermal Resistance Tamb = 25 °C, unless otherwise specified Parameter Junction ambient Document Number 86096 Rev. 1.2, 12-Aug-04 Symbol Value Unit l = 10 mm, TL = constant Test condition RthJA 25 K/W on PC board with spacing 25 mm RthJA 70 K/W www.vishay.com 1 BYW172D / 172F / 172G VISHAY Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Forward voltage Reverse current Reverse recovery time Max Unit IF = 3 A Symbol VF Min Typ. 1.1 V IF = 9 A VF 1.5 V VR = VRRM IR 1 µA VR = VRRM, Tj = 100 °C IR 20 µA IF = 0.5 A, IR = 1 A , iR = 0.25 A trr 100 ns 75 RthJA - Therm. Resist. Junction/Ambient (K/W) Typical Characteristics (Tamb = 25 °C unless otherwise specified) I FAV - Average Forward Current ( A ) 40 30 20 l l 10 TL= constant 0 0 5 10 15 20 25 94 9466 R thJA = 25 K/W l = 10 mm 2.0 1.5 1.0 RthJA = 70 K/W PCB: d = 25 mm 0.5 20 40 60 80 100 120 140 160 180 Tamb - Ambient Temperature ( ° C ) Figure 3. Max. Average Forward Current vs. Ambient Temperature 1000 I R - Reverse Current ( µA ) I F - Forward Current ( A ) 2.5 0 100 10 Tj = 175 °C 1 Tj = 25° C 0.1 0.01 V R = VRRM 100 10 1 0.5 1.0 1.5 2.0 2.5 V F - Forward Voltage ( V ) 16387 Figure 2. Forward Current vs. Forward Voltage www.vishay.com 2 V R = VRRM half sinewave 16388 Figure 1. Max. Thermal Resistance vs. Lead Length 0.001 0 3.0 0 30 l - Lead Length ( mm ) 3.5 25 16389 50 75 100 125 150 175 Tj - Junction Temperature ( ° C ) Figure 4. Reverse Current vs. Junction Temperature Document Number 86096 Rev. 1.2, 12-Aug-04 BYW172D / 172F / 172G VISHAY Vishay Semiconductors 120 V R = VRRM 160 CD - Diode Capacitance ( pF ) PR - Reverse Power Dissipation ( mW ) 180 140 PR -Limit @100 % V R 120 100 80 PR -Limit @80 % V R 60 40 20 0 25 50 75 100 125 150 60 40 20 1 10 100 V R - Reverse Voltage ( V ) 16391 Figure 5. Max. Reverse Power Dissipation vs. Junction Temperature Z thp - Thermal Resistance f. Pulse Cond. (K/W 80 0 0.1 175 Tj - Junction Temperature ( ° C ) 16390 f =1 MHz 100 Figure 6. Diode Capacitance vs. Reverse Voltage 1000 V RRM = 600 V R thJA = 70 K/W 100 tp /T= 0.5 Tamb = 25°C tp /T= 0.2 10 70°C tp/T= 0.1 t p/T= 0.05 0.02 1 10 -4 100 °C 45°C tp/T= 0.01 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 0 10 1 10 2 I FRM - Repetitive Peak Forward Current ( A ) t p - Pulse Length ( s ) 94 9562 Figure 7. Thermal Response Package Dimensions in mm (Inches) Sintered Glass Case SOD-64 Cathode Identification 4.3 (0.168) max. ISO Method E 1.35 (0.053) max. 26(1.014) min. Document Number 86096 Rev. 1.2, 12-Aug-04 4.0 (0.156) max. 26 (1.014) min. 94 9587 www.vishay.com 3 BYW172D / 172F / 172G VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 4 Document Number 86096 Rev. 1.2, 12-Aug-04