Product is End of Life 12/2014 SiP4280A Vishay Siliconix Slew Rate Controlled Load Switch APPLICATIONS • Cellular telephones • Digital still cameras • Personal digital assistants (PDA) • Hot swap supplies • Notebook computers • Personal communication devices FEATURES • 1.5 V to 5.5 V Input Voltage range • Very Low RDS(ON), typically 80 mΩ (5 V) • Slew rate limited turn-on time options - SiP4280A-1: 1 ms - SiP4280A-3: 100 µs • Fast shutdown load discharge option • Low quiescent current < 25 nA (typ) • 4 kV ESD Rating • 6 pin SOT23 package DESCRIPTION The SiP4280A is a P-Channel MOSFET power switch designed for high-side load switching applications. The output pass transistor is a P-Channel MOSFET transistor with typically 80 mΩ RDS(ON). The SiP4280A is available in two different versions of turn-on times. The SiP4280A-1 version has a slew rate limited turn-on time typically of 1 ms. The SiP4280A-3 version has a slew rate limited turn-on time typically of 100 µs and additionally offers a shutdown load discharge circuit to rapidly turn off a load circuit when the switch is disabled. Both SiP4280A load switch versions operate with an input voltage ranging from 1.5 V to 5.5 V, making them ideal for both 3 V and 5 V applications. The SiP4280A also features an under-voltage lock out which turns the switch off when an input undervoltage condition exists. Input logic levels are TTL and 2.5 V to 5.0 V CMOS compatible. The quiescent supply current is very low, typically 25 nA. In shutdown mode, the supply current decreases to less than 1.0 µA. The SiP4280A is available in a 6 pin SOT23 package and is specified over - 40 °C to 85 °C temperature range. TYPICAL APPLICATION CIRCUIT VIN VIN VOUT OUT SiP4280A SiP4280A CIN µF 11 µF ON COUT µF 1 µF µF 10.1 ON/OFF GND GND Document Number: 73602 S-61772–Rev. C, 11-Sep-06 GND www.vishay.com 1 SiP4280A Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Parameter Symbol Steady State VIN - 0.3 to 6 Enable Input Voltage VON Output Voltage VOUT - 0.3 to 6 - 0.3 to VIN + 0.3 Supply Input Voltage Thermal Resistance SOT23-6L IMAX IDM IDM TJ ΦJAa Power Dissipation SOT23-6Lb PD Maximum Switch Current Maximum Pulsed Current VIN ≥ 2.5 VIN < 2.5 Junction Temperature Unit V 2.3 6 3 A - 40 to 150 °C 180 °C/W 440 mW Notes: a. Device mounted with all leads soldered or welded to PC board. b. Derate 5.5 mW/°C above TA = 70 °C. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating/conditions for extended periods may affect device reliability. RECOMMENDED OPERATING RANGE all voltages referenced to GND = 0 V Parameter Symbol VIN Operating Temperature Range Steady State 1.5 to 5.5 - 40 to 85 Unit V °C SPECIFICATIONS Parameter Limits Mina Typb Maxa Unit - ISINK 0.01 0.01 80 85 100 160 2800 - 5.5 1 1 1 120 130 150 250 1.4 2 2.4 1 V VIN = 1.8 V to 5.5 V VIN = 1.5 V to 2.7 V VIN = 2.7 V to < 4.2 V VIN ≥ 4.2 V to 5.5 V VON/OFF = 5.5 V 1.5 0.4 - TD(ON) TON TD(OFF) VIN = 5 V, RLOAD = 10 Ω, TA = 25 °C VIN = 5 V, RLOAD = 10 Ω, TA = 25 °C VIN = 5 V, RLOAD = 10 Ω, TA = 25 °C - 20 1000 4 40 1500 10 TD(ON) TON TD(OFF) RPD VIN = 5 V, RLOAD = 10 Ω, TA = 25 °C VIN = 5 V, RLOAD = 10 Ω, TA = 25 °C VIN = 5 V, RLOAD = 10 Ω, TA = 25 °C ON/OFF = inactive, TA = 25 °C - 20 100 4 150 40 150 10 250 Symbol SiP4280A All Versions Operating Voltage Quiescent Current Off Supply Current Off Switch Current IQ(OFF) ISD(OFF) On-Resistance RDS(ON) On-Resistance Temp-Coefficient ON/OFF Input Low Voltagec TCRDS VIL ON/OFF Input High Voltage VIH ON/OFF Input Leakage SiP4280A-1 Version Output Turn-On Delay Time Output Turn-On Rise Time Output Turn-Off Delay Time SiP4280A-3 Version Output Turn-On Delay Time Output Turn-On Rise Time Output Turn-Off Delay Time Output Pull-Down Resistance Test Conditions Unless Specified VIN = 5 V, TA = - 40 to 85 °C VIN IQ ON/OFF = active ON/OFF = inactive, OUT = open ON/OFF = inactive, VOUT = 0 VIN = 5 V, TA = 25 °C VIN = 4.2 V, TA = 25 °C VIN = 3 V, TA = 25 °C VIN = 1.8 V, TA = 25 °C µA mΩ ppm/°C V µA µs µs Ω Notes: a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. For VIN ≤ 1.5 V see typical ON/OFF threshold curve. www.vishay.com 2 Document Number: 73602 S-61772–Rev. C, 11-Sep-06 SiP4280A Vishay Siliconix PIN CONFIGURATION PIN DESCRIPTION Pin Number SOT23-6 Pin Name 4, 6 VIN 3 ON/OFF 2, 5 GND Ground connection 1 OUT This pin is the P-Channel MOSFET drain connection Description This pin is the P-Channel MOSFET source connection Logic high enables the IC; logic low disables the IC SELECTION GUIDE Part Number Slew Rate (typ) Active Pull Down Enable SiP4280A-1-T1-E3 1 ms No Active High SiP4280A-3-T1-E3 100 µs Yes Active High Temperature Range ORDERING INFORMATION Part Number Marking SiP4280ADT-1-T1-E3 L4XX SiP4280ADT-3-T1-E3 L6XX Document Number: 73602 S-61772–Rev. C, 11-Sep-06 - 40 °C to 85 °C Package SOT23-6L SOT23-6L www.vishay.com 3 SiP4280A Vishay Siliconix 90 250 80 230 70 210 60 190 rDS(ON) (mΩ) IQ (nA) TYPICAL CHARACTERISTICS internally regulated, 25 °C unless noted 50 40 30 VIN = 5 V 10 130 20 40 60 80 100 mA 70 VIN = 3 V 0 500 mA 150 90 - 20 1A 170 110 20 0 - 40 2A 50 1.5 100 2.0 2.5 3.0 4.5 5.0 5.5 5.0 5.5 RDS(ON) vs. Input Voltage 140 2.2 130 2.0 1.8 ON/OFF Threshold (V) 120 rDS(ON) (mΩ) 4.0 VIN (V) Temperature (°C) Quiescent Current vs. Temperature V=3V 110 V=5V 100 90 80 1.6 1.4 1.2 VIH VIL 1.0 0.8 70 60 - 40 3.5 0.6 - 25 0 25 50 75 85 Temperature (°C) 0.4 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VIN (V) RDS(ON) vs. Temperature ON/OFF Threshold vs. Input Voltage 1.0 IoffSW (µA) 0.8 0.6 0.4 0.2 0.0 - 40 - 20 0 20 40 60 80 100 Temperature (°C) Off Switch Current vs. Temperature www.vishay.com 4 Document Number: 73602 S-61772–Rev. C, 11-Sep-06 SiP4280A Vishay Siliconix TYPICAL WAVEFORMS ON/OFF (5 V/div.) ON/OFF (5 V/div.) VOUT (2 V/div.) VOUT (2 V/div.) IIN (200 mA/div.) IIN (200 mA/div.) Time (500 µs/div) SiP4280A-1 Turn-On (VIN = 3 V, RLOAD = 6 Ω) Time (5 µs/div) SiP4280A-1 Turn-Off (VIN = 3 V, RLOAD = 6 Ω) ON/OFF (5 V/div.) ON/OFF (5 V/div.) VOUT (2 V/div.) VOUT (2 V/div.) IIN (200 mA/div.) IIN (200 mA/div.) Time (500 µs/div) SiP4280A-1 Turn-On (VIN = 5 V, RLOAD = 10 Ω) Document Number: 73602 S-61772–Rev. C, 11-Sep-06 Time (5 µs/div) SiP4280A-1 Turn-Off (VIN = 5 V, RLOAD = 10 Ω) www.vishay.com 5 SiP4280A Vishay Siliconix TYPICAL WAVEFORMS ON/OFF (5 V/div.) ON/OFF (5 V/div.) VOUT (2 V/div.) VOUT (2 V/div.) IIN (200 mA/div.) IIN (200 mA/div.) Time (50 µs/div) SiP4280A-3 Turn-On (VIN = 3 V, RLOAD = 6 Ω) Time (5 µs/div) SiP4280A-3 Turn-Off (VIN = 3 V, RLOAD = 6 Ω) ON/OFF (5 V/div.) ON/OFF (5 V/div.) VOUT (2 V/div.) VOUT (2 V/div.) IIN (200 mA/div.) IIN (200 mA/div.) Time (50 µs/div) SiP4280A-3 Turn-On (VIN = 5 V, RLOAD = 10 Ω) www.vishay.com 6 Time (5 µs/div) SiP4280A-3 Turn-Off (VIN = 5 V, RLOAD = 10 Ω) Document Number: 73602 S-61772–Rev. C, 11-Sep-06 SiP4280A Vishay Siliconix BLOCK DIAGRAM SiP4280A–3 Version only SiP4280A Functional Block Diagramm DETAILED DESCRIPTION The SiP4280A is a P-Channel MOSFET power switches designed for high-side slew rate controlled load switching applications. Once turned on, the slewrate control circuitry is activated and current is ramped in a linear fashion until it reaches the level required for the output load condition. This is accomplished by first elevating the gate voltage of the MOSFET up to its threshold voltage and then by linearly increasing the gate voltage until the MOSFET becomes fully enhanced. At this point, the gate voltage is then quickly increased to the full input voltage to reduce RDS(ON) of the MOSFET switch and minimize any associated power losses. Document Number: 73602 S-61772–Rev. C, 11-Sep-06 The SiP4280A-1 version has a modest 1 ms turn on slew rate feature, which significantly reduces in-rush current at turned on time and permits the load switch to be implemented with a small input capacitor, or no input capacitor at all, saving cost and space. In addition to a 100 µs minimized slew rate, the SIP4280A-3 features a shutdown output discharge circuit which is activated at shutdown (when the part is disabled through the ON/OFF pin) and discharges the output pin through a small internal resistor hence, turning off the load. In instances where the input voltage falls below 1.4 V (typically) the under voltage lock-out circuitry protects the MOSFET switch from entering the saturation region or operation by shutting down the chip. www.vishay.com 7 SiP4280A Vishay Siliconix APPLICATION INFORMATION Input Capacitor While a bypass capacitor on the input is not required, a 1 µF or larger capacitor for CIN is recommended in almost all applications. The Bypass capacitor should be placed as physically close as possible to the SiP4280A to be effective in minimizing transients on the input. Ceramic capacitors are recommended over tantalum because of their ability to withstand input current surges from low impedance sources such as batteries in portable devices. table. However, The real limiting factor for the safe operating load current is the thermal power dissipation of the package. To obtain the highest power dissipation the power pad of the device should be connected to a heat sink on the printed circuit board. The maximum power dissipation in any application is dependant on the maximum junction temperature, TJ(MAX) = 125 °C, the junction-to-ambient thermal resistance θJ-A = 180 °C for SOT23-6, and the ambient temperature, TA, which may be formulaically expressed as: P (max) = T J (max) − T A Output Capacitor A 0.1 µF capacitor or larger across VOUT and GND is recommended to insure proper slew operation. COUT may be increased without limit to accommodate any load transient condition with only minimal affect on the SiP4280A turn on slew rate time. There are no ESR or capacitor type requirement. Enable The ON/OFF pin is compatible with both TTL and CMOS logic voltage levels. Reverse Voltage Conditions and Protection The P-Channel MOSFET pass transistor has an intrinsic diode that is reversed biased when the input voltage is greater than the output voltage. Should VOUT exceed VIN, this intrinsic diode will become forward biased and allow excessive current to flow into the IC thru the VOUT pin and potentially damage the IC device. Therefore extreme care should be taken to prevent VOUT from exceeding VIN. In conditions where VOUT exceeds VIN a Schottky diode in parallel with the internal intrinsic diode is recommended to protect the SiP4280A. Thermal Considerations The SiP4280A is designed to maintain a constant output load current. The internal switch is designed to operate at 2.3 A of current, as stated in the ABS MAX θ J−A = 125 − T A 140 It then follows that, assuming an ambient temperature of 70 °C, the maximum power dissipation will be limited to about 305 mW for SOT23-6. In any application, the maximum continuous switch current is a function two things: the package power dissipation and the RDS(ON) at the ambient temperature. As an example let us calculate the worst-case maximum load current at TA= 70 °C. The worst case RDS(ON) at 25 °C occurs at an input voltage of 1.8 V and is equal to 250 mΩ. The RDS(ON) at 70 °C can be extrapolated from this data using the following formula RDS(ON) (at 70 °C) = RDS(ON) (at 25 °C) x (1 + TC x ΔT) Where TC is 2090 ppm/°C. Continuing with the calculation we have RDS(ON) (at 70 °C) = 250 mΩ x (1 + 0.00209 x (70 °C 25 °C)) = 278 mΩ The maximum current limit is then determined by P (max) I LOAD (max) 〈 R DS(ON ) which in case is 1.05 A for SOT23-6. Under the stated input voltage condition, if the calculated current limit is exceeded the internal die temperature will rise and eventually, possibly damage the device. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73602 www.vishay.com 8 Document Number: 73602 S-61772–Rev. C, 11-Sep-06 Package Information www.vishay.com Vishay Siliconix Thin SOT-23 : 5- and 6-Lead (Power IC only) e1 6 5 4 E1 1 2 E 3 -B- 4 Pin #1 indetifier e 0.15 M C B A b -AD 4 x θ1 0.17 ref c R A2 R L A Gage plane Seating plane θ Seating plane 4 x θ1 A1 0.08 C L (L1) -CNotes: 1. Use millimeters as the primary measurement. 2. Dimensioning and tolerances conform to ASME Y14.5M. - 1994. 3. This part is fully compliant with JEDEC MO-193. 4. Detail of Pin #1 indentifier is optional. MILLIMETERS INCHES DIM. MIN. NOM. MAX. MIN. NOM. A 0.91 1.00 1.10 0.036 0.039 MAX. 0.043 A1 0.00 0.05 0.10 0.000 0.002 0.004 0.039 A2 0.85 0.90 1.00 0.033 0.035 b 0.30 0.40 0.45 0.012 0.016 0.018 c 0.10 0.15 0.20 0.004 0.006 0.008 D 2.85 2.95 3.10 0.112 0.116 0.122 E 2.70 2.85 2.98 0.106 0.112 0.117 E1 1.525 1.65 1.70 0.060 0.065 0.067 0.50 0.014 e L 0.95 BSC 0.30 0.40 L1 0.60 ref. L2 0.25 BSC 0.0374 BSC - 0.020 0.024 BSC 0.010 BSC 0° 4° 8° 0° 4° 8° 1 4° 10° 12° 4° 10° 12° ECN: E13-1126-Rev. B, 01-Jul-13 DWG: 5926 Revision: 01-Jul-13 Document Number: 72821 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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