SiP4610A/B Datasheet

Product is End of Life 12/2014
SiP4610A/B
Vishay Siliconix
Protected 1-A High-Side Load Switch
APPLICATIONS
• Peripheral Ports
FEATURES
• 1 A Continuous Output Current
• 2.4 V to 5.5 V Supply Voltage Range
• User Settable Current Limit Level
• Low Quiescent Current
• Undervoltage Lockout
• Thermal Shutdown Protection
• Compatible with AAT4610A
• 4 kV ESD Rating-HBM
• Hot Swap
• Notebook Computers
• PDAs
DESCRIPTION
SiP4610A/B is a protected highside power switch. It is
designed to operate from voltages ranging from 2.4 V to
5.5 V and handle a continuous current of 1 A. The user
settable current limit protects the input supply voltage from
excessive load currents that might cause a system failure.
SiP4610A/B has a low quiescent current of 9 µA and in
shutdown the supply current is reduced to less than 1 µA.
In addition to current limit, the SiP4610A/B is protected by
undervoltage lockout and thermal shutdown.
There are two versions of the SiP4610. The SiP4610A has
an active low enable input, while the SiP4610B has an active
high enable input.
The SiP4610A/B is available in a lead (Pb)-free 5-pin thin
SOT-23 package for operation over the industrial
temperature range of - 40 to 85 °C.
TYPICAL APPLICATION DIAGRAM
IN
2.4 to 5.5 V
CIN
Enable
OUT
Load
COUT
SiP4610A/B
ON/ON
SET
GND
RSET
GND
Document Number: 73233
S-71061–Rev. J, 21-May-07
GND
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SiP4610A/B
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (All voltages referenced to GND = 0 V)
Parameter
VIN, VON, VON
IMAX
Storage Temperature
Operating Junction Temperature
Limit
Unit
- 0.3 to 6
2
- 65 to 150
- 40 to 150
V
A
°C
°C
305
mW
180
°C/W
Power Dissipationa, SOT-23 5-Pin
b
Thermal Impedance (ΘJA) , SOT-23 5-Pin
Notes:
a. Derate 5.5 mW/°C above TA = 70 °C.
b. Device mounted with all leads soldered or welded to PC board.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING RANGE (All voltages referenced to GND = 0 V)
Parameter
IN
Operating Temperature Range
Limit
Unit
2.4 to 5.5
- 40 to 85
V
°C
SPECIFICATIONSa
Limits
Test Conditions Unless Specified
Parameter
Symbol
IN = 5 V, TA = - 40 to 85 °C
Mina
Typb
Maxa
Unit
5.5
V
Power Supplies
Supply Voltage
VIN
2.4
IQ
IN = 5 V, ON/ON = Active, lOUT = 0 A
Shutdown Current
ISD
Switch Off Current
IS(off)
IN = 5 V, ON/ON = Inactive
IN = 5 V, ON/ON = Inactive, VOUT = 0 V
Quiescent Current
9
25
1
µA
1
Enable Inputs
ON/ON High
VIH
ON/ON Low
VIL
ON/ON Leakage Current
ILH
Turn Off Time
tOFF
Turn On Time
tON
IN = 2.4 V to 5.5 V
V
2.0
0.8
ON/ON = 5 V
1
11
21
65
200
IN = 5 V, TA = 25 °C
145
180
IN = 3 V, TA = 25 °C
190
230
1
1.25
IN = 5 V, RL = 10 Ω
µA
µs
Output
On-Resistance
Current Limit
rDS
IL
RSET = 6.8 kΩ
Minimum Current Limit
IL(min)
Current Limit Response Time
tRESP
IN = 5 V
UVLO Threshold
VUVLO
Rising Edge
UVLO Hysteresis
VHYST
0.75
mΩ
A
130
mA
4
µs
Undervoltage Lockout
1.8
2.4
0.05
V
Thermal Shutdown
Thermal Shutdown Threshold
Hysteresis
T
THYST
165
20
°C
Notes:
a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum ( - 40 to 85 °C).
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. Guaranteed by design.
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Document Number: 73233
S-71061–Rev. J, 21-May-07
SiP4610A/B
Vishay Siliconix
PIN CONFIGURATION, ORDERING INFORMATION, AND TRUTH TABLE
Thin SOT-23, 5-Pin
OUT
1
GND
2
SET
3
5
IN
4
ON/ON
Top View
ORDERING INFORMATION
Parameter
SiP4610ADT-T1-E3
SiP4610BDT-T1-E3
XX = Lot Code
W = Work week Code
Marking
Temperature Range
Package
M1WXX
M2WXX
- 40 to 85 °C
Thin SOT23-5
Eval Kit
Temperature Range
SiP4610DT
- 40 to 85 °C
Board Type
PIN DESCRIPTION
Pin Number
Name
Function
1
2
3
4
5
OUT
GND
SET
ON/ON
IN
Switch Output.
Ground pin.
Current limit level set pin. The level is determinied by the value of a resistor connected from this pin to GND.
Shutdown pin. ON, active low on the SiP4610A and ON, active high on the SiP4610B.
Input supply voltage and switch input.
FUNCTIONAL BLOCK DIAGRAM
nW/L
IN
OUT
_
+
W/L
Under
Voltage
Lockout
Thermal
Shutdown
SET
+
_
ON (SiP4610A)
ON (SiP4610B)
Reference
Voltage
GND
Figure 1. SiP4610 Block Diagram
Document Number: 73233
S-71061–Rev. J, 21-May-07
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SiP4610A/B
Vishay Siliconix
DETAILED DESCRIPTION
The SiP4610 limits load current by sampling the pass
transistor current and passing that through an external
resistor, RSET. The voltage across RSET, VSET, is then
compared with an internal reference voltage, VREF. In the
event that load current surpasses the set limit current, VSET
will exceed VREF causing the pass transistor gate voltage to
increase, thereby reducing the gate to source voltage of the
PMOS switch and regulating its current back down to ILIMIT.
Setting the Current Limit Level
Setting the current limit level on the SiP4610 requires some
care to ensure the maximum current required by the load will
not trigger the current limit circuitry. The minimum current
limit threshold should be determined by taking the maximum
current required by the load, ILOAD, and adding 25 %
headroom. The SiP4610 has a current limit tolerance of
25 %, which is largely a result of process variations from part
to part, and also temperature and VIN/VOUT variances. Thus,
to ensure that the actual current limit is never below the
desired current limit a 1/0.75 = 1.33 coefficient needs to be
added to the calculations. Knowing the maximum load
current required, the value of RSET is calculated as follows.
RSET = RSET coefficient/ILIMIT
where ILIMIT = (ILOAD x 1.33) x 1.25 and RSET coefficient is
7100 for a 1 A current limit. For typical RSET coefficient
values given a limit current refer to the "Typical
Characteristics" section.
Operation at Current Limit and Thermal Shutdown
In the event that a load higher than ILIMIT is demanded of the
SiP4610, the load current will stay fixed at the current limit
established by RSET. However, since the required current is
not supplied, the voltage at OUT will drop. The increase in
VIN - VOUT will cause the chip to dissipate more heat. The
power dissipation for the SiP4610 can be expressed as
P = ILOAD x (VIN - VOUT)
Once this exceeds the maximum power dissipation of the
package, the die temperature will rise. When the die
temperature exceeds an over-temperature limit of 165 °C,
the SiP4610 will shut down until it has cooled down to 145
°C, before starting up again. As can be seen in the figure
below, the SiP4610 will continue to cycle on and off until the
load is reduced or the part is turned off (See Figure 2).
The maximum power dissipation in any application is
dependant on the maximum junction temperature, TJ(MAX) =
125 °C, the junction-to-ambient thermal resistance for the
SOT23-5 package, θJ-A = 180 °C/W, and the ambient
temperature, TA, which may be formulaically expressed as:
P (max) =
TJ (max) − T A
θ J −A
=
125 − TA
180
It then follows that assuming an ambient temperature of
70 °C, the maximum power dissipation will be limited to about
305 mW.
Reverse Voltage
The SiP4610 is designed to control current flowing from IN to
OUT. If the voltage on OUT is raised higher than IN current
will flow from OUT to IN but the current limit function will not
be available, as can be inferred from the block diagram in
Figure 1. Thus, in applications were OUT is used to charge
IN, careful considerations must be taken to limit current
through the device and protect it from becoming damaged.
RSET = 3.32 kΩ
VOUT = (1 V/div)
IOUT (500 mA/div)
20 ms/div
Figure 2. Current Over load Condition. Load Switch turned on with 0.1 Ω load at time = 0 ms.
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Document Number: 73233
S-71061–Rev. J, 21-May-07
SiP4610A/B
Vishay Siliconix
20
20
16
16
Quiescent Current (µA)
Quiescent Current (µA)
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
12
8
12
8
4
4
0
- 40
0
- 20
0
20
40
60
80
100
120
0
1
2
3
4
5
6
VIN – Input Voltage (V)
Temperature (°C)
Quiescent Current vs. Input Voltage
Quiescent Current vs. Temperature
1000
250
900
VIN = 3 V
200
VIN = 5 V
700
RSET = 16.2 kΩ
600
rDS(on) (mΩ)
Output Current (A)
800
500
400
150
100
300
200
50
100
0
0
0
1
2
3
4
5
0
20
40
VOUT - Output Voltage (V)
60
80
100
120
Temperature (°C)
rDS(on) vs. Temperature
Output Current vs. VOUT
10
1
1
Off Switch Current (µA)
Off Supply Current (µA)
0.1
0.01
0.001
0.01
0.001
0.0001
0.0001
0.00001
0.00001
- 40
0.1
- 20
0
20
40
60
80
100
120
- 40
- 20
0
20
40
60
80
100
Temperature (°C)
Temperature (°C)
Off Supply Current vs. Temperature
Off Switch Current vs. Temperature
Document Number: 73233
S-71061–Rev. J, 21-May-07
120
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SiP4610A/B
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
120
15
VIN = 3 V
13
Turn-Off Time (µS
Turn-On Time (µS)
100
80
VIN = 5 V
60
40
11
VIN = 3 V
9
7
20
0
- 40
VIN = 5 V
- 20
0
20
40
60
80
5
- 40
100
- 20
0
20
40
60
Temperature (°C)
Temperature (°C)
Turn-On vs. Temperature
RL = 10 Ω , CL = 0.47 µF
Turn-Off vs. Temperature
RL = 10 Ω , CL = 0.47 µF
80
100
100
2.0
RSET (kΩ )
VON (v)
1.5
1.0
10
0.5
0.0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
1
0.1
6.0
1
ILIMIT (A)
VIN – Input Voltage (V)
VIH vs. VIL vs. VIN
RSET vs. ILIMIT
9
4
3
RSET = 22.1 k
VIN – VOUT = 0.5 V
2
8
Current Limit (%)
RSET ILIMIT Product (kΩ)
10
7
1
0
-1
-2
-3
6
0.00
0.25
0.50
0.75
1.00
1.25
1.50
ILIMIT (A)
RSET Coefficient vs. ILIMIT
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1.75
2.00
-4
- 50
- 25
0
25
50
75
100
125
Temperature (°C)
Current Limit vs. Temperature
Document Number: 73233
S-71061–Rev. J, 21-May-07
SiP4610A/B
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
250
250
VOUT = 5 V
I(VOUT to VIN ) = 1 A
200
200
150
150
Rds (mΩ)
Rds (mΩ)
VOUT = 5 V
100
50
100
50
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
- 40
- 20
0
20
40
60
80
100
Temperature (°C)
Current (A)
Rds (VOUT to VIN) vs. Temperature
Rds (VOUT to VIN) vs. Current
TYPICAL WAVEFORMS
VOUT (1 V/div)
VOUT (1 V/div)
IOUT = 500 mA
ON (1 V/div)
20 µs/div
IOUT = 500 mA
ON (1 V/div)
20 µs/div
Turn On
Turn Off
VIN (1 V/div)
VIN (1 V/div)
IOUT = (2 A/div)
IOUT = (2 A/div)
VOUT (1 V/div)
VOUT (1 V/div)
1 µs/div
Short Circuit through 0.3 Ω, Vin = 3.3 V
1 µs/div
Short Circuit through 0.3 Ω, Vin = 5 V
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?73233.
Document Number: 73233
S-71061–Rev. J, 21-May-07
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Package Information
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Vishay Siliconix
Thin SOT-23 : 5- and 6-Lead (Power IC only)
e1
6
5
4
E1
1
2
E
3
-B-
4
Pin #1
indetifier
e
0.15 M
C B A
b
-AD
4 x θ1
0.17 ref
c
R
A2
R
L
A
Gage plane
Seating plane
θ
Seating plane
4 x θ1
A1
0.08 C
L
(L1)
-CNotes:
1. Use millimeters as the primary measurement.
2. Dimensioning and tolerances conform to ASME Y14.5M. - 1994.
3. This part is fully compliant with JEDEC MO-193.
4. Detail of Pin #1 indentifier is optional.
MILLIMETERS
INCHES
DIM.
MIN.
NOM.
MAX.
MIN.
NOM.
A
0.91
1.00
1.10
0.036
0.039
MAX.
0.043
A1
0.00
0.05
0.10
0.000
0.002
0.004
0.039
A2
0.85
0.90
1.00
0.033
0.035
b
0.30
0.40
0.45
0.012
0.016
0.018
c
0.10
0.15
0.20
0.004
0.006
0.008
D
2.85
2.95
3.10
0.112
0.116
0.122
E
2.70
2.85
2.98
0.106
0.112
0.117
E1
1.525
1.65
1.70
0.060
0.065
0.067
0.50
0.014
e
L
0.95 BSC
0.30
0.40
L1
0.60 ref.
L2
0.25 BSC
0.0374 BSC
-
0.020
0.024 BSC
0.010 BSC

0°
4°
8°
0°
4°
8°
1
4°
10°
12°
4°
10°
12°
ECN: E13-1126-Rev. B, 01-Jul-13
DWG: 5926
Revision: 01-Jul-13
Document Number: 72821
1
For technical questions, contact: [email protected]
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Revision: 02-Oct-12
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Document Number: 91000