Product is End of Life 12/2014 SiP4610A/B Vishay Siliconix Protected 1-A High-Side Load Switch APPLICATIONS • Peripheral Ports FEATURES • 1 A Continuous Output Current • 2.4 V to 5.5 V Supply Voltage Range • User Settable Current Limit Level • Low Quiescent Current • Undervoltage Lockout • Thermal Shutdown Protection • Compatible with AAT4610A • 4 kV ESD Rating-HBM • Hot Swap • Notebook Computers • PDAs DESCRIPTION SiP4610A/B is a protected highside power switch. It is designed to operate from voltages ranging from 2.4 V to 5.5 V and handle a continuous current of 1 A. The user settable current limit protects the input supply voltage from excessive load currents that might cause a system failure. SiP4610A/B has a low quiescent current of 9 µA and in shutdown the supply current is reduced to less than 1 µA. In addition to current limit, the SiP4610A/B is protected by undervoltage lockout and thermal shutdown. There are two versions of the SiP4610. The SiP4610A has an active low enable input, while the SiP4610B has an active high enable input. The SiP4610A/B is available in a lead (Pb)-free 5-pin thin SOT-23 package for operation over the industrial temperature range of - 40 to 85 °C. TYPICAL APPLICATION DIAGRAM IN 2.4 to 5.5 V CIN Enable OUT Load COUT SiP4610A/B ON/ON SET GND RSET GND Document Number: 73233 S-71061–Rev. J, 21-May-07 GND www.vishay.com 1 SiP4610A/B Vishay Siliconix ABSOLUTE MAXIMUM RATINGS (All voltages referenced to GND = 0 V) Parameter VIN, VON, VON IMAX Storage Temperature Operating Junction Temperature Limit Unit - 0.3 to 6 2 - 65 to 150 - 40 to 150 V A °C °C 305 mW 180 °C/W Power Dissipationa, SOT-23 5-Pin b Thermal Impedance (ΘJA) , SOT-23 5-Pin Notes: a. Derate 5.5 mW/°C above TA = 70 °C. b. Device mounted with all leads soldered or welded to PC board. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. RECOMMENDED OPERATING RANGE (All voltages referenced to GND = 0 V) Parameter IN Operating Temperature Range Limit Unit 2.4 to 5.5 - 40 to 85 V °C SPECIFICATIONSa Limits Test Conditions Unless Specified Parameter Symbol IN = 5 V, TA = - 40 to 85 °C Mina Typb Maxa Unit 5.5 V Power Supplies Supply Voltage VIN 2.4 IQ IN = 5 V, ON/ON = Active, lOUT = 0 A Shutdown Current ISD Switch Off Current IS(off) IN = 5 V, ON/ON = Inactive IN = 5 V, ON/ON = Inactive, VOUT = 0 V Quiescent Current 9 25 1 µA 1 Enable Inputs ON/ON High VIH ON/ON Low VIL ON/ON Leakage Current ILH Turn Off Time tOFF Turn On Time tON IN = 2.4 V to 5.5 V V 2.0 0.8 ON/ON = 5 V 1 11 21 65 200 IN = 5 V, TA = 25 °C 145 180 IN = 3 V, TA = 25 °C 190 230 1 1.25 IN = 5 V, RL = 10 Ω µA µs Output On-Resistance Current Limit rDS IL RSET = 6.8 kΩ Minimum Current Limit IL(min) Current Limit Response Time tRESP IN = 5 V UVLO Threshold VUVLO Rising Edge UVLO Hysteresis VHYST 0.75 mΩ A 130 mA 4 µs Undervoltage Lockout 1.8 2.4 0.05 V Thermal Shutdown Thermal Shutdown Threshold Hysteresis T THYST 165 20 °C Notes: a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum ( - 40 to 85 °C). b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. Guaranteed by design. www.vishay.com 2 Document Number: 73233 S-71061–Rev. J, 21-May-07 SiP4610A/B Vishay Siliconix PIN CONFIGURATION, ORDERING INFORMATION, AND TRUTH TABLE Thin SOT-23, 5-Pin OUT 1 GND 2 SET 3 5 IN 4 ON/ON Top View ORDERING INFORMATION Parameter SiP4610ADT-T1-E3 SiP4610BDT-T1-E3 XX = Lot Code W = Work week Code Marking Temperature Range Package M1WXX M2WXX - 40 to 85 °C Thin SOT23-5 Eval Kit Temperature Range SiP4610DT - 40 to 85 °C Board Type PIN DESCRIPTION Pin Number Name Function 1 2 3 4 5 OUT GND SET ON/ON IN Switch Output. Ground pin. Current limit level set pin. The level is determinied by the value of a resistor connected from this pin to GND. Shutdown pin. ON, active low on the SiP4610A and ON, active high on the SiP4610B. Input supply voltage and switch input. FUNCTIONAL BLOCK DIAGRAM nW/L IN OUT _ + W/L Under Voltage Lockout Thermal Shutdown SET + _ ON (SiP4610A) ON (SiP4610B) Reference Voltage GND Figure 1. SiP4610 Block Diagram Document Number: 73233 S-71061–Rev. J, 21-May-07 www.vishay.com 3 SiP4610A/B Vishay Siliconix DETAILED DESCRIPTION The SiP4610 limits load current by sampling the pass transistor current and passing that through an external resistor, RSET. The voltage across RSET, VSET, is then compared with an internal reference voltage, VREF. In the event that load current surpasses the set limit current, VSET will exceed VREF causing the pass transistor gate voltage to increase, thereby reducing the gate to source voltage of the PMOS switch and regulating its current back down to ILIMIT. Setting the Current Limit Level Setting the current limit level on the SiP4610 requires some care to ensure the maximum current required by the load will not trigger the current limit circuitry. The minimum current limit threshold should be determined by taking the maximum current required by the load, ILOAD, and adding 25 % headroom. The SiP4610 has a current limit tolerance of 25 %, which is largely a result of process variations from part to part, and also temperature and VIN/VOUT variances. Thus, to ensure that the actual current limit is never below the desired current limit a 1/0.75 = 1.33 coefficient needs to be added to the calculations. Knowing the maximum load current required, the value of RSET is calculated as follows. RSET = RSET coefficient/ILIMIT where ILIMIT = (ILOAD x 1.33) x 1.25 and RSET coefficient is 7100 for a 1 A current limit. For typical RSET coefficient values given a limit current refer to the "Typical Characteristics" section. Operation at Current Limit and Thermal Shutdown In the event that a load higher than ILIMIT is demanded of the SiP4610, the load current will stay fixed at the current limit established by RSET. However, since the required current is not supplied, the voltage at OUT will drop. The increase in VIN - VOUT will cause the chip to dissipate more heat. The power dissipation for the SiP4610 can be expressed as P = ILOAD x (VIN - VOUT) Once this exceeds the maximum power dissipation of the package, the die temperature will rise. When the die temperature exceeds an over-temperature limit of 165 °C, the SiP4610 will shut down until it has cooled down to 145 °C, before starting up again. As can be seen in the figure below, the SiP4610 will continue to cycle on and off until the load is reduced or the part is turned off (See Figure 2). The maximum power dissipation in any application is dependant on the maximum junction temperature, TJ(MAX) = 125 °C, the junction-to-ambient thermal resistance for the SOT23-5 package, θJ-A = 180 °C/W, and the ambient temperature, TA, which may be formulaically expressed as: P (max) = TJ (max) − T A θ J −A = 125 − TA 180 It then follows that assuming an ambient temperature of 70 °C, the maximum power dissipation will be limited to about 305 mW. Reverse Voltage The SiP4610 is designed to control current flowing from IN to OUT. If the voltage on OUT is raised higher than IN current will flow from OUT to IN but the current limit function will not be available, as can be inferred from the block diagram in Figure 1. Thus, in applications were OUT is used to charge IN, careful considerations must be taken to limit current through the device and protect it from becoming damaged. RSET = 3.32 kΩ VOUT = (1 V/div) IOUT (500 mA/div) 20 ms/div Figure 2. Current Over load Condition. Load Switch turned on with 0.1 Ω load at time = 0 ms. www.vishay.com 4 Document Number: 73233 S-71061–Rev. J, 21-May-07 SiP4610A/B Vishay Siliconix 20 20 16 16 Quiescent Current (µA) Quiescent Current (µA) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 12 8 12 8 4 4 0 - 40 0 - 20 0 20 40 60 80 100 120 0 1 2 3 4 5 6 VIN – Input Voltage (V) Temperature (°C) Quiescent Current vs. Input Voltage Quiescent Current vs. Temperature 1000 250 900 VIN = 3 V 200 VIN = 5 V 700 RSET = 16.2 kΩ 600 rDS(on) (mΩ) Output Current (A) 800 500 400 150 100 300 200 50 100 0 0 0 1 2 3 4 5 0 20 40 VOUT - Output Voltage (V) 60 80 100 120 Temperature (°C) rDS(on) vs. Temperature Output Current vs. VOUT 10 1 1 Off Switch Current (µA) Off Supply Current (µA) 0.1 0.01 0.001 0.01 0.001 0.0001 0.0001 0.00001 0.00001 - 40 0.1 - 20 0 20 40 60 80 100 120 - 40 - 20 0 20 40 60 80 100 Temperature (°C) Temperature (°C) Off Supply Current vs. Temperature Off Switch Current vs. Temperature Document Number: 73233 S-71061–Rev. J, 21-May-07 120 www.vishay.com 5 SiP4610A/B Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 120 15 VIN = 3 V 13 Turn-Off Time (µS Turn-On Time (µS) 100 80 VIN = 5 V 60 40 11 VIN = 3 V 9 7 20 0 - 40 VIN = 5 V - 20 0 20 40 60 80 5 - 40 100 - 20 0 20 40 60 Temperature (°C) Temperature (°C) Turn-On vs. Temperature RL = 10 Ω , CL = 0.47 µF Turn-Off vs. Temperature RL = 10 Ω , CL = 0.47 µF 80 100 100 2.0 RSET (kΩ ) VON (v) 1.5 1.0 10 0.5 0.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 1 0.1 6.0 1 ILIMIT (A) VIN – Input Voltage (V) VIH vs. VIL vs. VIN RSET vs. ILIMIT 9 4 3 RSET = 22.1 k VIN – VOUT = 0.5 V 2 8 Current Limit (%) RSET ILIMIT Product (kΩ) 10 7 1 0 -1 -2 -3 6 0.00 0.25 0.50 0.75 1.00 1.25 1.50 ILIMIT (A) RSET Coefficient vs. ILIMIT www.vishay.com 6 1.75 2.00 -4 - 50 - 25 0 25 50 75 100 125 Temperature (°C) Current Limit vs. Temperature Document Number: 73233 S-71061–Rev. J, 21-May-07 SiP4610A/B Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 250 250 VOUT = 5 V I(VOUT to VIN ) = 1 A 200 200 150 150 Rds (mΩ) Rds (mΩ) VOUT = 5 V 100 50 100 50 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 - 40 - 20 0 20 40 60 80 100 Temperature (°C) Current (A) Rds (VOUT to VIN) vs. Temperature Rds (VOUT to VIN) vs. Current TYPICAL WAVEFORMS VOUT (1 V/div) VOUT (1 V/div) IOUT = 500 mA ON (1 V/div) 20 µs/div IOUT = 500 mA ON (1 V/div) 20 µs/div Turn On Turn Off VIN (1 V/div) VIN (1 V/div) IOUT = (2 A/div) IOUT = (2 A/div) VOUT (1 V/div) VOUT (1 V/div) 1 µs/div Short Circuit through 0.3 Ω, Vin = 3.3 V 1 µs/div Short Circuit through 0.3 Ω, Vin = 5 V Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73233. Document Number: 73233 S-71061–Rev. J, 21-May-07 www.vishay.com 7 Package Information www.vishay.com Vishay Siliconix Thin SOT-23 : 5- and 6-Lead (Power IC only) e1 6 5 4 E1 1 2 E 3 -B- 4 Pin #1 indetifier e 0.15 M C B A b -AD 4 x θ1 0.17 ref c R A2 R L A Gage plane Seating plane θ Seating plane 4 x θ1 A1 0.08 C L (L1) -CNotes: 1. Use millimeters as the primary measurement. 2. Dimensioning and tolerances conform to ASME Y14.5M. - 1994. 3. This part is fully compliant with JEDEC MO-193. 4. Detail of Pin #1 indentifier is optional. MILLIMETERS INCHES DIM. MIN. NOM. MAX. MIN. NOM. A 0.91 1.00 1.10 0.036 0.039 MAX. 0.043 A1 0.00 0.05 0.10 0.000 0.002 0.004 0.039 A2 0.85 0.90 1.00 0.033 0.035 b 0.30 0.40 0.45 0.012 0.016 0.018 c 0.10 0.15 0.20 0.004 0.006 0.008 D 2.85 2.95 3.10 0.112 0.116 0.122 E 2.70 2.85 2.98 0.106 0.112 0.117 E1 1.525 1.65 1.70 0.060 0.065 0.067 0.50 0.014 e L 0.95 BSC 0.30 0.40 L1 0.60 ref. L2 0.25 BSC 0.0374 BSC - 0.020 0.024 BSC 0.010 BSC 0° 4° 8° 0° 4° 8° 1 4° 10° 12° 4° 10° 12° ECN: E13-1126-Rev. B, 01-Jul-13 DWG: 5926 Revision: 01-Jul-13 Document Number: 72821 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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