Product is End of Life 12/2014 SiP4280 Vishay Siliconix Slew Rate Controlled Load Switch FEATURES • 1.8 V to 5.5 V Input Voltage range • Very Low RDS(ON), typically 80 mΩ (5 V) • Slew rate limited turn-on time options - SiP4280-1: 1 ms - SiP4280-3: 100 µs • Fast shutdown load discharge option • Low quiescent current • 4 kV ESD Rating • 6 pin SOT23 package APPLICATIONS • Cellular telephones • Digital still cameras • Personal digital assistants (PDA) • Hot swap supplies • Notebook computers • Personal communication devices DESCRIPTION The SiP4280 is a P-Channel MOSFET power switch designed for high-side load switching applications. The output pass transistor is a P-Channel MOSFET transistor with typically 80 mΩ RDS(ON). The SiP4280 is available in two different versions of turn-on times. The SiP4280-1 version has a slew rate limited turn-on time typically of 1 ms. The SiP4280-3 version has a slew rate limited turn-on time typically of 100 µs and additionally offers a shutdown load discharge circuit to rapidly turn off a load circuit when the switch is disabled. Both SiP4280 load switch versions operate with an input voltage ranging from 1.8 V to 5.5 V, making them ideal for both 3 V and 5 V applications. The SiP4280 also features an under-voltage lock out which turns the switch off when an input undervoltage condition exists. Input logic levels are TTL and 2.5 V to 5.0 V CMOS compatible. The quiescent supply current is very low, typically 2.5 µA. In shutdown mode, the supply current decreases to less than 1.0 µA. The SiP4280 is available in a 6 pin SOT23 package and is specified over - 40 °C to 85 °C temperature range. TYPICAL APPLICATION CIRCUIT VIN VIN VOUT OUT CIN 1 µF COUT 0.1 µF ON ON/OFF GND GND Document Number: 73476 S-61690–Rev. D, 04-Sep-06 GND www.vishay.com 1 SiP4280 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Parameter Supply Input Voltage Enable Input Voltage Output Voltage Maximum Switch Current Maximum Pulsed Current VIN ≥ 2.5 VIN < 2.5 Junction Temperature Thermal Resistance SOT23-6L Power Dissipation SOT23-6Lb Notes: a. Device mounted with all leads soldered or welded to PC board. b. Derate 5.5 mW/°C above TA = 70 °C. Symbol Steady State Unit VIN VON VOUT IMAX IDM IDM TJ - 0.3 to 6 - 0.3 to 6 - 0.3 to VIN + 0.3 V 2.3 6 3 A - 40 to 150 180 440 °C °C/W mW ΦJAa PD Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating/conditions for extended periods may affect device reliability. RECOMMENDED OPERATING RANGE all voltages referenced to GND = 0 V Parameter Symbol VIN Operating Temperature Range Steady State 1.8 to 5.5 - 40 to 85 Unit V °C SPECIFICATIONS Parameter SiP4280 All Versions Operating Voltagec Undervoltage Lockout Undervoltage Lockout Hysteresis Quiescent Current Off Supply Current Off Switch Current Typb Maxa ISINK VIN = 2.7 V to 5.5 V VIN = 2.7 V to ≤ 4.2 V VIN > 4.2 V to 5.5 V VON/OFF = 5.5 V 1.8 1.0 2 2.4 - 1.4 250 2.5 0.01 0.01 80 85 100 160 2800 - 5.5 1.8 4 1 1 120 130 150 250 0.8 1 TD(ON) TON TD(OFF) VIN = 5 V, RLOAD = 10 Ω, TA = 25 °C VIN = 5 V, RLOAD = 10 Ω, TA = 25 °C VIN = 5 V, RLOAD = 10 Ω, TA = 25 °C - 20 1000 4 40 1500 10 TD(ON) TON TD(OFF) RPD VIN = 5 V, RLOAD = 10 Ω, TA = 25 °C VIN = 5 V, RLOAD = 10 Ω, TA = 25 °C VIN = 5 V, RLOAD = 10 Ω, TA = 25 °C ON/OFF = inactive, TA = 25 °C - 20 100 4 150 40 150 10 250 Symbol VIN VUVLO VUVLO(hyh) IQ IQ(OFF) ISD(OFF) RDS(ON) On-Resistance Temp-Coefficient ON/OFF Input Low Voltaged TCRDS VIL ON/OFF Input Leakage SiP4280-1 Version Output Turn-On Delay Time Output Turn-On Rise Time Output Turn-Off Delay Time SiP4280-3 Version Output Turn-On Delay Time Output Turn-On Rise Time Output Turn-Off Delay Time Output Pull-Down Resistance Limits Mina On-Resistance ON/OFF Input High Voltage Test Conditions Unless Specified VIN = 5 V, TA = - 40 to + 85 °C VIH VIN Falling ON/OFF = active ON/OFF = inactive, OUT = open ON/OFF = inactive, VOUT = 0 VIN = 5 V, TA = 25 °C VIN = 4.2 V, TA = 25 °C VIN = 3 V, TA = 25 °C VIN = 1.8 V, TA = 25 °C Unit V mV µA mΩ ppm/°C V µA µS µS Ω Notes: a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. Part requires minimum start-up of VIN ≥ 2.0 to ensure operation down to 1.8 V. d. For VIN ≤ 2.7 V see typical ON/OFF threshold curve. www.vishay.com 2 Document Number: 73476 S-61690–Rev. D, 04-Sep-06 SiP4280 Vishay Siliconix PIN CONFIGURATION SOT23-6 Top View O OUT 1 6 VIN GND 2 5 GND ON/OFF 3 4 VIN PIN DESCRIPTION Pin Number Pin Name SOT23-6 4, 6 3 2, 5 1 VIN ON/OFF GND OUT Symbol This pin is the P-channel MOSFET source connection Logic high enables the IC; logic low disables the IC and reduces the IC and reduces the quiescent current to 2.5 µA Ground connection This pin is the P-channel MOSFET drain connection SELECTION GUIDE Part Number Slew Rate (typ) Active Pull Down Enable SiP4280-1-T1-E3 SiP4280-3-T1-E3 1 ms 100 µs No Yes Active High Active High Part Number Marking Temperature Range Package SiP4280DT-1-T1-E3 SiP4280DT-3-T1-E3 L1XXX L3XXX - 40 °C to 85 °C SOT23-6L SOT23-6L ORDERING INFORMATION Document Number: 73476 S-61690–Rev. D, 04-Sep-06 www.vishay.com 3 SiP4280 Vishay Siliconix TYPICAL CHARACTERISTICS internally regulated, 25 °C unless noted 4.0 3.5 3.5 3.0 3.0 Quiescent Current (µA) V=5V IQ (µA) 2.5 2.0 VIN = 3 V 1.5 1.0 2.5 2.0 1.5 1.0 0.5 0.5 0.0 - 40 0.0 - 25 0 25 50 75 85 0 1 2 3 4 5 6 VIN (V) Temperature (°C) Quiescent Current vs. Temperature Quiescent Current vs. Input Voltage 250 140 230 130 2A 210 120 V=3V 1A rDS(ON) (mΩ) rDS(ON) (mΩ) 190 170 500 mA 150 130 110 V=5V 100 90 110 90 80 100 mA 70 70 50 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 60 - 40 5.5 - 25 VIN (V) 1.6 2.0 1.4 1.8 75 85 75 100 85 1.2 1.6 IoffSW (µA) ON/OFF Threshold (V) 50 RDS(ON) vs. Temperature 2.2 1.4 1.2 VIH VIL 1.0 1.0 0.8 0.6 0.4 0.8 0.2 0.6 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VIN (V) ON/OFF Threhold vs. Input Voltage www.vishay.com 4 25 Temperature (°C) RDS(ON) vs. Input Voltage 0.4 1.5 0 5.5 0.0 - 40 - 25 0 25 50 Temperature (°C) Off Switch Current vs. Temperature Document Number: 73476 S-61690–Rev. D, 04-Sep-06 SiP4280 Vishay Siliconix TYPICAL WAVEFORMS ON/OFF (5 V/div.) ON/OFF (5 V/div.) VOUT (2 V/div.) VOUT (2 V/div.) IIN (200 mA/div.) IIN (200 mA/div.) Time (500 µs/div) SiP4280-1 Turn-On (VIN = 3 V, RLOAD = 6 Ω) Time (5 µs/div) SiP4280-1 Turn-Off (VIN = 3 V, RLOAD = 6 Ω) ON/OFF (5 V/div.) ON/OFF (5 V/div.) VOUT (2 V/div.) VOUT (2 V/div.) IIN (200 mA/div.) IIN (200 mA/div.) Time (500 µs/div) SiP4280-1 Turn-On (VIN = 5 V, RLOAD = 10 Ω) Document Number: 73476 S-61690–Rev. D, 04-Sep-06 Time (5 µs/div) SiP4280-1 Turn-Off (VIN = 5 V, RLOAD = 10 Ω) www.vishay.com 5 SiP4280 Vishay Siliconix TYPICAL WAVEFORMS ON/OFF (5 V/div.) ON/OFF (5 V/div.) VOUT (2 V/div.) VOUT (2 V/div.) IIN (200 mA/div.) IIN (200 mA/div.) Time (50 µs/div) Time (5 µs/div) SiP4280-3 Turn-On (VIN = 3 V, RLOAD = 6 Ω) SiP4280-3 Turn-Off (VIN = 3 V, RLOAD = 6 Ω) ON/OFF (5 V/div.) ON/OFF (5 V/div.) VOUT (2 V/div.) VOUT (2 V/div.) IIN (200 mA/div.) IIN (200 mA/div.) Time (50 µs/div) SiP4280-3 Turn-On (VIN = 5 V, RLOAD = 10 Ω) www.vishay.com 6 Time (5 µs/div) SiP4280-3 Turn-Off (VIN = 5 V, RLOAD = 10 Ω) Document Number: 73476 S-61690–Rev. D, 04-Sep-06 SiP4280 Vishay Siliconix BLOCK DIAGRAM SiP4280–3 Version only SiP4280 Functional Block Diagramm DETAILED DESCRIPTION The SiP4280 is a P-Channel MOSFET power switches designed for high-side slew rate controlled load switching applications. Once turned on, the slewrate control circuitry is activated and current is ramped in a linear fashion until it reaches the level required for the output load condition. This is accomplished by first elevating the gate voltage of the MOSFET up to its threshold voltage and then by linearly increasing the gate voltage until the MOSFET becomes fully enhanced. At this point, the gate voltage is then quickly increased to the full input voltage to reduce RDS(ON) of the MOSFET switch and minimize any associated power losses. Document Number: 73476 S-61690–Rev. D, 04-Sep-06 The SiP4280-1 version has a modest 1 ms turn on slew rate feature, which significantly reduces in-rush current at turned on time and permits the load switch to be implemented with a small input capacitor, or no input capacitor at all, saving cost and space. In addition to a 100 µs minimized slew rate, the SIP4280-3 features a shutdown output discharge circuit which is activated at shutdown (when the part is disabled through the ON/OFF pin) and discharges the output pin through a small internal resistor hence, turning off the load. In instances where the input voltage falls below 1.4 V (typically) the under voltage lock-out circuitry protects the MOSFET switch from entering the saturation region or operation by shutting down the chip. www.vishay.com 7 SiP4280 Vishay Siliconix APPLICATION INFORMATION Input Capacitor While a bypass capacitor on the input is not required, a 1 µF or larger capacitor for CIN is recommended in almost all applications. The Bypass capacitor should be placed as physically close as possible to the SiP4280 to be effective in minimizing transients on the input. Ceramic capacitors are recommended over tantalum because of their ability to withstand input current surges from low impedance sources such as batteries in portable devices. Output Capacitor A 0.1 µF capacitor or larger across VOUT and GND is recommended to insure proper slew operation. COUT may be increased without limit to accommodate any load transient condition with only minimal affect on the SiP4280 turn on slew rate time. There are no ESR or capacitor type requirement. Enable The ON/OFF pin is compatible with both TTL and CMOS logic voltage levels. Reverse Voltage Conditions and Protection The P-Channel MOSFET pass transistor has an intrinsic diode that is reversed biased when the input voltage is greater than the output voltage. Should VOUT exceed VIN , this intrinsic diode will become forward biased and allow excessive current to flow into the IC thru the VOUT pin and potentially damage the IC device. Therefore extreme care should be taken to prevent VOUT from exceeding VIN. In conditions where VOUT exceeds VIN a Schottky diode in parallel with the internal intrinsic diode is recommended to protect the SiP4280. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73476 www.vishay.com 8 Document Number: 73476 S-61690–Rev. D, 04-Sep-06 Package Information www.vishay.com Vishay Siliconix Thin SOT-23 : 5- and 6-Lead (Power IC only) e1 6 5 4 E1 1 2 E 3 -B- 4 Pin #1 indetifier e 0.15 M C B A b -AD 4 x θ1 0.17 ref c R A2 R L A Gage plane Seating plane θ Seating plane 4 x θ1 A1 0.08 C L (L1) -CNotes: 1. Use millimeters as the primary measurement. 2. Dimensioning and tolerances conform to ASME Y14.5M. - 1994. 3. This part is fully compliant with JEDEC MO-193. 4. Detail of Pin #1 indentifier is optional. MILLIMETERS INCHES DIM. MIN. NOM. MAX. MIN. NOM. A 0.91 1.00 1.10 0.036 0.039 MAX. 0.043 A1 0.00 0.05 0.10 0.000 0.002 0.004 0.039 A2 0.85 0.90 1.00 0.033 0.035 b 0.30 0.40 0.45 0.012 0.016 0.018 c 0.10 0.15 0.20 0.004 0.006 0.008 D 2.85 2.95 3.10 0.112 0.116 0.122 E 2.70 2.85 2.98 0.106 0.112 0.117 E1 1.525 1.65 1.70 0.060 0.065 0.067 0.50 0.014 e L 0.95 BSC 0.30 0.40 L1 0.60 ref. L2 0.25 BSC 0.0374 BSC - 0.020 0.024 BSC 0.010 BSC 0° 4° 8° 0° 4° 8° 1 4° 10° 12° 4° 10° 12° ECN: E13-1126-Rev. B, 01-Jul-13 DWG: 5926 Revision: 01-Jul-13 Document Number: 72821 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000