SiP4280 Vishay Siliconix Slew Rate Controlled Load Switch FEATURES APPLICATIONS D D D D D D D D D D D D D D D 1.8 V to 5.5 V Input Voltage range Very Low RDS(ON), typically 80 m (5 V) Slew rate limited turn–on time options SiP4280–1: 1 ms SiP4280–3: 100 s Fast shutdown load discharge option Low quiescent current 4 kV ESD Rating 8 pin SC70JW package Cellular telephones Digital still cameras Personal digital assistants (PDA) Hot swap supplies Notebook computers Personal communication devices DESCRIPTION The SiP4280 is a P–channel MOSFET power switch designed for high–side load switching applications. The output pass transistor is a P–channel MOSFET transistor with typically 80 mΩ RDS(ON). The SiP4280 is available in two different versions of turn–on times. The SiP4280–1 version has a slew rate limited turn–on time typically of 1 ms. The SiP4280–3 version has a slew rate limited turn–on time typically of 100 s and additionally offers a shutdown load discharge circuit to rapidly turn off a load circuit when the switch is disabled. input undervoltage condition exists. Input logic levels are TTL and 2.5 volt to 5.0 volt CMOS compatible. The quiescent supply current is very low, typically 2.5 A. In shutdown mode, the supply current decreases to less than 1.0 A. The SiP4280 is available in a 8 pin SC70JW package and is specified over –40 _C to 85 _C temperature range. Both SiP4280 load switch versions operate with an input voltage ranging from 1.8 V to 5.5 V, making them ideal for both 3 V and 5 V applications. The SiP4280 also features an under–voltage lock out which turns the switch off when an TYPICAL APPLICATION CIRCUIT Document Number: 73476 S–52468—Rev. B, 28-Nov-05 www.vishay.com 1 SiP4280 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Supply Input Voltage (VIN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 6 V Enable Input Voltage (VON) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 6 V Output Voltage (VOUT) . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to VIN +0.3 V Maximum Switch Current (IMAX) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.3 A Maximum Pulsed Current (IDM) . . . . . . . . . . . . . . . . . . . . VIN 2.5 V ..... 6 A . . . . . . . . . . . . . . . . . . . . . VIN < 2.5 V ..... 3 A Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . –40 _C to 150 _C Thermal Resistance (JA)a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140 _C/W Power Dissipation (PD)b . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 714 mW Notes a. Device mounted with all leads soldered or welded to PC board. b. Derate 7.14 mW/_C above TA = 25 _C RECOMMENDED OPERATING RANGE (ALL VOLTAGES REFERENCED TO GND = 0 V) VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8 V to 5.5 V Operating Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . –40 _C to 85 _C SPECIFICATIONS Limits Test Conditions Unless Specified p Parameter Symbol VIN = 5 V, TA = –40 _C to 85 _C Mina Typb Maxa Units 1.8 – 5.5 V 1.0 1.4 1.8 V – 250 – mV SiP4280 All Versions Operating Voltagec Undervoltage Lockout Undervoltage Lockout Hysteresis VIN VUVLO VIN Falling VUVLO(hyh) Quiescent Current IQ ON/OFF = active – 2.5 4 A Off Supply Current IQ(OFF) ON/OFF = inactive, OUT = open – 0.01 1 A Off Switch Current ISD(OFF) ON/OFF = inactive, VOUT = 0 – 0.01 1 A VIN = 5 V, TA = 25 _C – 80 120 mΩ VIN = 4.2 V, TA = 25 _C – 85 130 mΩ VIN = 3 V, TA = 25 _C – 100 150 mΩ VIN = 1.8 V, TA = 25 _C – 160 250 mΩ – 2800 – ppm/_C On Resistance On–Resistance On–Resistance Temp–Coefficient ON/OFF Input Low Voltaged RDS(on) TCRDS VIN = 2.7 V to 5.5 V – – 0.8 V VIN = 2.7 V to 4.2 V 2 – – V VIN = 4.2 V to 5.5 V 2.4 – – V ISINK VON/OFF = 5.5 V – – 1 A TD(ON) VIN = 5 V, RLOAD = 10Ω, TA = 25 _C – 20 40 s Output Turn–On Rise Time TON VIN = 5 V, RLOAD = 10Ω, TA = 25 _C – 1000 1500 s Output Turn–Off Delay Time TD(OFF) VIN = 5 V, RLOAD = 10Ω, TA = 25 _C – 4 10 s Output Turn–On Delay Time TD(ON) VIN = 5 V, RLOAD = 10Ω, TA = 25 _C – 20 40 s Output Turn–On Rise Time TON VIN = 5 V, RLOAD = 10Ω, TA = 25 _C – 100 150 s Output Turn–Off Delay Time TD(OFF) VIN = 5 V, RLOAD = 10Ω, TA = 25 _C – 4 10 s RPD ON/OFF = inactive, TA = 25 _C – 150 250 Ω ON/OFF Input High Voltage ON/OFF Input Leakage VIL VIH SiP4280–1 Version Output Turn–On Delay Time SiP4280–3 Version Output Pull–Down Resistance a. b. c. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Part requires minimum start–up of VIN 2.0 to ensure operation down to 1.8 V. For VIN 2.7 V see typical ON/OFF threshold curve. www.vishay.com 2 Document Number: 73476 S–52468—Rev. B, 28-Nov-05 SiP4280 Vishay Siliconix PIN CONFIGURATION PIN DESCRIPTION Pin Number Pin Description SC70JW–8 Name 1,5,6,7,8 VIN 3 ON/OFF 4 GND Ground connection 2 OUT This pin is the P–channel MOSFET drain connection. This pin is the P–channel MODFET source connection Logic high enables the IC; logic low disables the IC and reduces the quiescent current to 2.5 A SELECTION GUIDE Part Number Slew Rate Active Enable (typ) Pull Down SiP4280–1–T1–E3 1 ms No Active High SiP4280–3–T1–E3 100 s Yes Active High Part Number Marking Temperature Range Package SiP4280DR–1–T1–E3 L1XXX ORDERING INFORMATION SC70JW–8 –40 40 _C to 85 _C SiP4280DR–3–T1–E3 L3XXX SC70JW–8 Notes: XXX = Lot Code Document Number: 73476 S–52468—Rev. B, 28-Nov-05 www.vishay.com 3 SiP4280 Vishay Siliconix TYPICAL CHARACTERISTICS (INTERNALLY REGULATED, 25_C UNLESS NOTED) Quiescent Current vs. Temperature Quiescent Current vs. Input Voltage 4.0 3.5 3.5 3.0 3.0 Quiescent Current ( V=5V IQ ( 2.5 2.0 VIN = 3 V 1.5 1.0 2.0 1.5 1.0 0.5 0.5 0.0 –40 2.5 0.0 –25 0 25 50 75 0 85 1 2 3 4 5 6 75 85 VIN (V) Temperature (_C) RDS(ON) vs. Input Voltage RDS(ON) vs. Temperature 250 140 230 130 2A 210 120 V=3V 1A rDS(ON) (m) rDS(ON) (m) 190 170 500 mA 150 130 110 V=5V 100 90 110 90 80 100 mA 70 70 50 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 60 –40 5.5 25 50 ON/OFF Threshold vs. Input Voltage Off Switch Current vs. Temperature 2.2 1.6 2.0 1.4 1.2 1.6 IoffSW ( ON/OFF Threshold (V) 0 Temperature (_C) 1.8 1.4 1.2 VIH VIL 1.0 0.6 0.0 2.0 2.5 3.0 3.5 VIN (V) www.vishay.com 0.8 0.2 0.6 0.4 1.5 1.0 0.4 0.8 4 –25 VIN (V) 4.0 4.5 5.0 5.5 –40 –25 0 25 50 75 100 85 Temperature (_C) Document Number: 73476 S–52468—Rev. B, 28-Nov-05 SiP4280 Vishay Siliconix TYPICAL WAVEFORMS SiP4280–1 Turn–On (VIN = 3 V, RLOAD = 6 W) SiP4280–1 Turn–Off (VIN = 3 V, RLOAD = 6 W) ON/OFF (5 V/div.) ON/OFF (5 V/div.) VOUT (2 V/div.) VOUT (2 V/div.) IIN (200 mA/div.) IIN (200 mA/div.) Time (500 s/div) SiP4280–1 Turn–On (VIN = 5 V, RLOAD = 10 W) Time (5 s/div) SiP4280–1 Turn–Off (VIN = 5 V, RLOAD = 10 W) ON/OFF (5 V/div.) ON/OFF (5 V/div.) VOUT (2 V/div.) VOUT (2 V/div.) IIN (200 mA/div.) IIN (200 mA/div.) Time (500 s/div) Document Number: 73476 S–52468—Rev. B, 28-Nov-05 Time (5 s/div) www.vishay.com 5 SiP4280 Vishay Siliconix TYPICAL WAVEFORMS SiP4280–3 Turn–On (VIN = 3 V, RLOAD = 6 W) SiP4280–3 Turn–Off (VIN = 3 V, RLOAD = 6 W) ON/OFF (5 V/div.) ON/OFF (5 V/div.) VOUT (2 V/div.) VOUT (2 V/div.) IIN (200 mA/div.) IIN (200 mA/div.) Time (50 s/div) SiP4280–3 Turn–On (VIN = 5 V, RLOAD = 10 W) Time (5 s/div) SiP4280–3 Turn–Off (VIN = 5 V, RLOAD = 10 W) ON/OFF (5 V/div.) ON/OFF (5 V/div.) VOUT (2 V/div.) VOUT (2 V/div.) IIN (200 mA/div.) IIN (200 mA/div.) Time (50 s/div) www.vishay.com 6 Time (5 s/div) Document Number: 73476 S–52468—Rev. B, 28-Nov-05 SiP4280 Vishay Siliconix BLOCK DIAGRAM SiP4280–3 Version only SiP4280 Functional Block Diagramm Document Number: 73476 S–52468—Rev. B, 28-Nov-05 www.vishay.com 7 SiP4280 Vishay Siliconix DETAILED DESCRIPTION The SiP4280 is a P–channel MOSFET power switches designed for high–side slew rate controlled load–switching applications. During turn on, the current ramps linearly until it reaches the level required for the output load condition. This is achieved by first applying the threshold voltage on the gate of the MOSFET. Once at this level, the current begins to slew and the gate voltage is then linearly increased until the MOSFET becomes fully enhanced. Once fully enhanced, the gate is quickly increased to the full input voltage and RDS(ON) is minimized. The SiP4280–1 version has a moderate 1ms turn on slew rate feature, which reduces in–rush current when the MOSFET is turned on. This function allows the load switch to be implemented with a small input capacitor, or no input capacitor at all. The SIP4280–3 has in addition to the 100 s minimized slew rate limited turn on function, a shutdown output discharge circuit to rapidly turn off a load when the load switch is disabled through the ON/OFF pin. Both versions of the SiP4280 operate with input voltages ranging from 1.8 V to 5.5 V. Also, both versions of this device have extremely low operating current, making them ideal for battery–powered applications. In cases where the input voltage drops below 1.8 V, the under voltage lockout function will prevent the P–channel MOSFET device from entering into the saturation region of operation by automatically shutting down SiP4280. The ON/OFF control pin is TTL compatible and will also function with 2.5 volt to 5 volt CMOS logic systems. APPLICATION INFORMATION Input Capacitor Enable While a bypass capacitor on the input is not required, a 1 F or larger capacitor for CIN is recommended in almost all ap– plications. The Bypass capacitor should be placed as phy– sically close as possible to the SiP4280 to be effective in minimizing transients on the input. Ceramic capacitors are recommended over tantalum because of their ability to withstand input current surges from low impedance sources such as batteries in portable devices. The ON/OFF pin is compatible with both TTL and CMOS logic voltage levels. Output Capacitor A 0.1 F capacitor or larger across VOUT and GND is recom– mended to insure proper slew operation. COUT may be increased without limit to accommodate any load transient condition with only minimal affect on the SiP4280 turn on slew rate time. There are no ESR or capacitor type requirement. Reverse Voltage Conditions and Protection The P–channel MOSFET pass transistor has an intrinsic diode that is reversed biased when the input voltage is greater than the output voltage. Should VOUT exceed VIN , this intrinsic diode will become forward biased and allow excessive current to flow into the IC thru the VOUT pin and potentially damage the IC device. Therefore extreme care should be taken to prevent VOUT from exceeding VIN. In conditions where VOUT exceeds VIN a Schottky diode in parallel with the internal intrinsic diode is recommended to protect the SiP4280. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73476. www.vishay.com 8 Document Number: 73476 S–52468—Rev. B, 28-Nov-05 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1