IPA60R099P6 Data Sheet (2.2 MB, EN)

MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™P6
600VCoolMOS™P6PowerTransistor
IPx60R099P6
DataSheet
Rev.2.1
Final
PowerManagement&Multimarket
600VCoolMOS™P6PowerTransistor
IPW60R099P6,IPP60R099P6,IPA60R099P6
1Description
TO-247
TO-220
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe
experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.
TheoffereddevicesprovideallbenefitsofafastswitchingSJMOSFET
whilenotsacrificingeaseofuse.Extremelylowswitchingandconduction
lossesmakeswitchingapplicationsevenmoreefficient,morecompact,
lighterandcooler.
Features
•IncreasedMOSFETdv/dtruggedness
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20
andJESD22)
TO-220FP
tab
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom
andUPS.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
99
mΩ
Qg.typ
70
nC
ID,pulse
109
A
[email protected]
8.8
µJ
Body diode di/dt
300
A/µs
Type/OrderingCode
Package
IPW60R099P6
PG-TO 247
IPP60R099P6
PG-TO 220
IPA60R099P6
PG-TO 220 FullPAK
Final Data Sheet
Marking
6R099P6
2
RelatedLinks
see Appendix A
Rev.2.1,2015-05-18
600VCoolMOS™P6PowerTransistor
IPW60R099P6,IPP60R099P6,IPA60R099P6
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Final Data Sheet
3
Rev.2.1,2015-05-18
600VCoolMOS™P6PowerTransistor
IPW60R099P6,IPP60R099P6,IPA60R099P6
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Values
Unit
Note/TestCondition
37.9
24.0
A
TC=25°C
TC=100°C
-
109
A
TC=25°C
-
-
796
mJ
ID=6.6A; VDD=50V; see table 10
EAR
-
-
1.21
mJ
ID=6.6A; VDD=50V; see table 10
Avalanche current, repetitive
IAR
-
-
6.6
A
-
MOSFET dv/dt ruggedness
dv/dt
-
-
100
V/ns
VDS=0...400V
Gate source voltage (static)
VGS
-20
-
20
V
static;
Gate source voltage (dynamic)
VGS
-30
-
30
V
AC (f>1 Hz)
Power dissipation (Non FullPAK)
TO-220, TO-247
Ptot
-
-
278
W
TC=25°C
Power dissipation (FullPAK)
TO-220FP
Ptot
-
-
34
W
TC=25°C
Storage temperature
Tstg
-55
-
150
°C
-
Operating junction temperature
Tj
-55
-
150
°C
-
Mounting torque (Non FullPAK)
TO-220, TO-247
-
-
-
60
Ncm M3 and M3.5 screws
Mounting torque (FullPAK)
TO-220FP
-
-
-
50
Ncm M2.5 screws
Continuous diode forward current
IS
-
-
32.9
A
TC=25°C
Diode pulse current
IS,pulse
-
-
109
A
TC=25°C
Reverse diode dv/dt3)
dv/dt
-
-
15
V/ns
VDS=0...400V,ISD<=IS,Tj=25°C
see table 8
Maximum diode commutation speed
dif/dt
-
-
300
A/µs
VDS=0...400V,ISD<=IS,Tj=25°C
see table 8
Insulation withstand voltage for
TO-220FP
VISO
-
-
2500
V
Vrms,TC=25°C,t=1min
Min.
Typ.
Max.
ID
-
-
Pulsed drain current2)
ID,pulse
-
Avalanche energy, single pulse
EAS
Avalanche energy, repetitive
2)
1)
Limited by Tj max. Maximum duty cycle D=0.75
Pulse width tp limited by Tj,max
3)
IdenticallowsideandhighsideswitchwithidenticalRG
2)
Final Data Sheet
4
Rev.2.1,2015-05-18
600VCoolMOS™P6PowerTransistor
IPW60R099P6,IPP60R099P6,IPA60R099P6
3Thermalcharacteristics
Table3Thermalcharacteristics(NonFullPAK)TO-220,TO-247
Parameter
Symbol
Thermal resistance, junction - case
Values
Unit
Note/TestCondition
Min.
Typ.
Max.
RthJC
-
-
0.45
°C/W -
Thermal resistance, junction - ambient RthJA
-
-
62
°C/W leaded
Soldering temperature, wavesoldering
only allowed at leads
-
-
260
°C
1.6mm (0.063 in.) from case for 10s
Unit
Note/TestCondition
Tsold
Table4Thermalcharacteristics(FullPAK)TO-220FP
Parameter
Symbol
Thermal resistance, junction - case
Values
Min.
Typ.
Max.
RthJC
-
-
3.65
°C/W -
Thermal resistance, junction - ambient RthJA
-
-
80
°C/W leaded
Soldering temperature, wavesoldering
only allowed at leads
-
-
260
°C
Final Data Sheet
Tsold
5
1.6mm (0.063 in.) from case for 10s
Rev.2.1,2015-05-18
600VCoolMOS™P6PowerTransistor
IPW60R099P6,IPP60R099P6,IPA60R099P6
4Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table5Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
4.0
4.5
V
VDS=VGS,ID=1.21mA
-
10
5
-
µA
VDS=600,VGS=0V,Tj=25°C
VDS=600,VGS=0V,Tj=150°C
IGSS
-
-
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
0.089
0.232
0.099
-
Ω
VGS=10V,ID=14.5A,Tj=25°C
VGS=10V,ID=14.5A,Tj=150°C
Gate resistance
RG
-
1
-
Ω
f=1MHz,opendrain
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
600
-
Gate threshold voltage
V(GS)th
3.5
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table6Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Values
Min.
Typ.
Max.
Ciss
-
3330
-
pF
VGS=0V,VDS=100V,f=1MHz
Output capacitance
Coss
-
140
-
pF
VGS=0V,VDS=100V,f=1MHz
Effective output capacitance, energy
related1)
Co(er)
-
110
-
pF
VGS=0V,VDS=0...400V
Effective output capacitance, time
related2)
Co(tr)
-
495
-
pF
ID=constant,VGS=0V,VDS=0...400V
Turn-on delay time
td(on)
-
20
-
ns
VDD=400V,VGS=13V,ID=18.1A,
RG=1.7Ω;seetable9
Rise time
tr
-
10
-
ns
VDD=400V,VGS=13V,ID=18.1A,
RG=1.7Ω;seetable9
Turn-off delay time
td(off)
-
50
-
ns
VDD=400V,VGS=13V,ID=18.1A,
RG=1.7Ω;seetable9
Fall time
tf
-
5
-
ns
VDD=400V,VGS=13V,ID=18.1A,
RG=1.7Ω;seetable9
Unit
Note/TestCondition
Table7Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Values
Min.
Typ.
Max.
Qgs
-
20
-
nC
VDD=400V,ID=18.1A,VGS=0to10V
Gate to drain charge
Qgd
-
24
-
nC
VDD=400V,ID=18.1A,VGS=0to10V
Gate charge total
Qg
-
70
-
nC
VDD=400V,ID=18.1A,VGS=0to10V
Gate plateau voltage
Vplateau
-
6.1
-
V
VDD=400V,ID=18.1A,VGS=0to10V
1)
Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V
Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
2)
Final Data Sheet
6
Rev.2.1,2015-05-18
600VCoolMOS™P6PowerTransistor
IPW60R099P6,IPP60R099P6,IPA60R099P6
Table8Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,IF=18.1A,Tj=25°C
470
-
ns
VR=400V,IF=18.1A,diF/dt=100A/µs;
see table 8
-
9
-
µC
VR=400V,IF=18.1A,diF/dt=100A/µs;
see table 8
-
37
-
A
VR=400V,IF=18.1A,diF/dt=100A/µs;
see table 8
Min.
Typ.
Max.
VSD
-
0.9
Reverse recovery time
trr
-
Reverse recovery charge
Qrr
Peak reverse recovery current
Irrm
Final Data Sheet
7
Rev.2.1,2015-05-18
600VCoolMOS™P6PowerTransistor
IPW60R099P6,IPP60R099P6,IPA60R099P6
5Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation(NonFullPAK)
Diagram2:Powerdissipation(FullPAK)
300
40
35
250
30
200
Ptot[W]
Ptot[W]
25
150
20
15
100
10
50
5
0
0
25
50
75
100
125
0
150
0
25
50
TC[°C]
75
100
125
150
TC[°C]
Ptot=f(TC)
Ptot=f(TC)
Diagram3:Max.transientthermalimpedance(NonFullPAK)
Diagram4:Max.transientthermalimpedance(FullPAK)
1
101
10
0.5
100
ZthJC[K/W]
ZthJC[K/W]
100
0.5
10-1
0.2
0.2
0.1
0.05
10-1
0.02
0.1
0.05
0.01
0.02
0.01
-2
10
single pulse
10-5
10-4
10-3
10-2
10-1
10-2
single pulse
10-5
10-4
10-3
tp[s]
10-1
100
101
tp[s]
ZthJC=f(tP);parameter:D=tp/T
Final Data Sheet
10-2
ZthJC=f(tP);parameter:D=tp/T
8
Rev.2.1,2015-05-18
600VCoolMOS™P6PowerTransistor
IPW60R099P6,IPP60R099P6,IPA60R099P6
Diagram5:Safeoperatingarea(NonFullPAK)
Diagram6:Safeoperatingarea(FullPAK)
103
103
1 µs
1 µs
2
10
102
10 µs
10 µs
100 µs
100 µs
101
101
1 ms
1 ms
ID[A]
ID[A]
100
10 ms
100
DC
10 ms
10-1
10-1
10-2
10-2
10-3
DC
10-3
100
101
102
10-4
103
100
101
102
VDS[V]
VDS[V]
ID=f(VDS);TC=25°C;D=0;parameter:tp
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram7:Safeoperatingarea(NonFullPAK)
Diagram8:Safeoperatingarea(FullPAK)
2
10
103
102
1 µs
1 µs
10 µs
10 µs
100 µs
100 µs
101
101
1 ms
1 ms
10 ms
100
10 ms
100
ID[A]
ID[A]
DC
10-1
10-1
10-2
10-2
10-3
DC
10-3
100
101
102
103
10-4
100
101
102
VDS[V]
VDS[V]
ID=f(VDS);TC=80°C;D=0;parameter:tp
ID=f(VDS);TC=80°C;D=0;parameter:tp
Final Data Sheet
9
103
Rev.2.1,2015-05-18
600VCoolMOS™P6PowerTransistor
IPW60R099P6,IPP60R099P6,IPA60R099P6
Diagram9:Typ.outputcharacteristics
Diagram10:Typ.outputcharacteristics
120
70
110
50
8V
80
7V
45
70
40
60
ID[A]
ID[A]
8V
55
90
7V
35
30
50
6V
25
40
20
30
5.5 V
15
20
6V
10
5.5 V
5V
0
10 V
60
10 V
100
20 V
65
20 V
4.5 V
0
5
10
10
5V
5
15
0
20
4.5 V
0
5
10
VDS[V]
15
20
VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram11:Typ.drain-sourceon-stateresistance
Diagram12:Drain-sourceon-stateresistance
0.55
0.30
0.50
0.25
0.45
0.20
5.5 V
0.35
6V
6.5 V
0.30
7V
RDS(on)[Ω]
RDS(on)[Ω]
0.40
10 V
20 V
0.15
typ
98%
0.25
0.10
0.20
0.15
0
5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80
0.05
-50
-25
0
25
ID[A]
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Final Data Sheet
50
75
100
125
150
Tj[°C]
RDS(on)=f(Tj);ID=14.5A;VGS=10V
10
Rev.2.1,2015-05-18
600VCoolMOS™P6PowerTransistor
IPW60R099P6,IPP60R099P6,IPA60R099P6
Diagram13:Typ.transfercharacteristics
Diagram14:Typ.gatecharge
120
10
9
25 °C
100
8
120 V
480 V
7
80
VGS[V]
ID[A]
6
60
150 °C
5
4
40
3
2
20
1
0
0
2
4
6
8
10
12
0
14
0
10
20
30
VGS[V]
40
50
60
70
80
Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj
VGS=f(Qgate);ID=18.1Apulsed;parameter:VDD
Diagram15:Forwardcharacteristicsofreversediode
Diagram16:Avalancheenergy
2
10
800
700
600
101
IF[A]
125 °C
EAS[mJ]
500
25 °C
400
300
100
200
100
10-1
0.0
0.5
1.0
1.5
2.0
0
25
50
VSD[V]
100
125
150
Tj[°C]
IF=f(VSD);parameter:Tj
Final Data Sheet
75
EAS=f(Tj);ID=6.6A;VDD=50V
11
Rev.2.1,2015-05-18
600VCoolMOS™P6PowerTransistor
IPW60R099P6,IPP60R099P6,IPA60R099P6
Diagram17:Drain-sourcebreakdownvoltage
Diagram18:Typ.capacitances
104
700
Ciss
680
660
103
620
C[pF]
VBR(DSS)[V]
640
600
Coss
102
580
101
560
Crss
540
520
-75
-50
-25
0
25
50
75
100
125
150
175
100
0
100
Tj[°C]
200
300
400
500
VDS[V]
VBR(DSS)=f(Tj);ID=1mA
C=f(VDS);VGS=0V;f=1MHz
Diagram19:Typ.Cossstoredenergy
10
9
8
7
Eoss[µJ]
6
5
4
3
2
1
0
0
100
200
300
400
500
VDS[V]
Eoss=f(VDS)
Final Data Sheet
12
Rev.2.1,2015-05-18
600VCoolMOS™P6PowerTransistor
IPW60R099P6,IPP60R099P6,IPA60R099P6
6TestCircuits
Table9Diodecharacteristics
Test circuit for diode characteristics
Diode recovery waveform
V ,I
Rg1
VDS( peak)
VDS
VDS
VDS
trr
IF
Rg 2
tF
tS
dIF / dt
QF
IF
t
dIrr / dt trr =tF +tS
Qrr = QF + QS
Irrm
Rg1 = Rg 2
IF
10 %Irrm
QS
Table10Switchingtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
VDS
VGS
VGS
10%
td(on)
ton
tr
td(off)
tf
toff
Table11Unclampedinductiveload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
Final Data Sheet
13
ID
VDS
Rev.2.1,2015-05-18
600VCoolMOS™P6PowerTransistor
IPW60R099P6,IPP60R099P6,IPA60R099P6
7PackageOutlines
Figure1OutlinePG-TO247,dimensionsinmm/inches
Final Data Sheet
14
Rev.2.1,2015-05-18
600VCoolMOS™P6PowerTransistor
IPW60R099P6,IPP60R099P6,IPA60R099P6
Figure2OutlinePG-TO220,dimensionsinmm/inches
Final Data Sheet
15
Rev.2.1,2015-05-18
600VCoolMOS™P6PowerTransistor
IPW60R099P6,IPP60R099P6,IPA60R099P6
DIM
A
A1
A2
b
b1
b2
b3
b4
c
D
D1
E
e
e1
N
H
L
L1
Q
MILLIMETERS
MIN
MAX
4.50
4.90
2.34
2.85
2.86
2.42
0.65
0.90
0.95
1.38
0.95
1.51
0.65
1.38
0.65
1.51
0.40
0.63
15.67
16.15
8.97
9.83
10.00
10.65
2.54 (BSC)
INCHES
MIN
0.177
0.092
0.095
0.026
0.037
0.037
0.026
0.026
0.016
0.617
0.353
0.394
DOCUMENT NO.
Z8B00003319
SCALE
0
2.5
0
2.5
5mm
EUROPEAN PROJECTION
0.100 (BSC)
5.08
3
28.70
12.78
2.83
2.95
3.15
MAX
0.193
0.112
0.113
0.035
0.054
0.059
0.054
0.059
0.025
0.636
0.387
0.419
0.200
3
29.75
13.75
3.45
3.38
3.50
1.130
0.503
0.111
0.116
0.124
1.171
0.541
0.136
0.133
0.138
ISSUE DATE
05-05-2014
REVISION
04
Figure3OutlinePG-TO220FullPAK,dimensionsinmm/inches
Final Data Sheet
16
Rev.2.1,2015-05-18
600VCoolMOS™P6PowerTransistor
IPW60R099P6,IPP60R099P6,IPA60R099P6
8AppendixA
Table12RelatedLinks
• IFXCoolMOSTMP6Webpage:www.infineon.com
• IFXCoolMOSTMP6applicationnote:www.infineon.com
• IFXCoolMOSTMP6simulationmodel:www.infineon.com
• IFXDesigntools:www.infineon.com
Final Data Sheet
17
Rev.2.1,2015-05-18
600VCoolMOS™P6PowerTransistor
IPW60R099P6,IPP60R099P6,IPA60R099P6
RevisionHistory
IPW60R099P6, IPP60R099P6, IPA60R099P6
Revision:2015-05-18,Rev.2.1
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2014-03-07
Release of final version
2.1
2015-05-18
Rdson max change from 105 to 99mOhm
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Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
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Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
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Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
18
Rev.2.1,2015-05-18