IPI60R099CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R ds,on in TO220 R DS(on),max • Ultra low gate charge Q g,typ 650 V 0.099 Ω 60 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications PG-TO262-3-1 • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: • Hard switching SMPS topologies for Server and Telecon Type Package Marking IPI60R099CP PG-TO262 6R099P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 31 T C=100 °C 19 Pulsed drain current2) I D,pulse T C=25 °C 93 Avalanche energy, single pulse E AS I D=11 A, V DD=50 V 800 Avalanche energy, repetitive t AR2),3) E AR I D=11 A, V DD=50 V 1.2 Avalanche current, repetitive t AR2),3) I AR MOSFET dv /dt ruggedness dv /dt Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg Mounting torque Rev. 2.1 Unit A mJ 11 A V DS=0...480 V 50 V/ns static ±20 V AC (f >1 Hz) ±30 T C=25 °C 255 W -55 ... 150 °C M3 and M3.5 screws page 1 60 Ncm 2014-0528 IPI60R099CP Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous diode forward current IS Diode pulse current 2) I S,pulse Reverse diode dv /dt 4) dv /dt Parameter Symbol Conditions Value Unit 18 T C=25 °C A 93 15 V/ns Values Unit min. typ. max. - - 0.5 Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA leaded - - 62 Soldering temperature, wavesoldering only allowed at leads T sold 1.6 mm (0.063 in.) from case for 10 s - - 260 °C V K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA 600 - - Gate threshold voltage V GS(th) V DS=V GS, I D=1.2 mA 2.5 3 3.5 Zero gate voltage drain current I DSS V DS=600 V, V GS=0 V, T j=25 °C - - 5 V DS=600 V, V GS=0 V, T j=150 °C - 50 - µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=18 A, T j=25 °C - 0.09 0.099 Ω V GS=10 V, I D=18 A, T j=150 °C - 0.24 - f =1 MHz, open drain - 1.3 - Gate resistance Rev. 2.1 RG page 2 Ω 2014-0528 IPI60R099CP Parameter Values Symbol Conditions Unit min. typ. max. - 2800 - - 130 - - 130 - Dynamic characteristics Input capacitance C iss Output capacitance C oss Effective output capacitance, energy related5) C o(er) Effective output capacitance, time related6) C o(tr) - 340 - Turn-on delay time t d(on) - 10 - Rise time tr - 5 - Turn-off delay time t d(off) - 60 - Fall time tf - 5 - Gate to source charge Q gs - 14 - Gate to drain charge Q gd - 20 - Gate charge total Qg - 60 80 Gate plateau voltage V plateau - 5.0 - V - 0.9 1.2 V - 450 - ns - 12 - µC - 70 - A V GS=0 V, V DS=100 V, f =1 MHz pF V GS=0 V, V DS=0 V to 480 V V DD=400 V, V GS=10 V, I D=18 A, R G=3.3 Ω ns Gate Charge Characteristics V DD=400 V, I D=18 A, V GS=0 to 10 V nC Reverse Diode Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Peak reverse recovery current I rrm V GS=0 V, I F=18 A, T j=25 °C V R=400 V, I F=I S, di F/dt =100 A/µs 1) J-STD20 and JESD22 2) Pulse width t p limited by T j,max 3) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 4) ISD≤ID, di/dt≤100A/µs,VDClink = 400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch 5) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 6) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. Rev. 2.1 page 3 2014-0528 IPI60R099CP 1 Power dissipation 2 Safe operating area P tot=f(T C) I D=f(V DS); T C=25 °C; D =0 parameter: t p 102 300 10 µs limited by on-state resistance 1 µs 100 µs 101 1 ms DC I D [A] P tot [W] 200 10 ms 100 100 0 10-1 0 40 80 120 100 160 101 T C [°C] 102 103 V DS [V] 3 Max. transient thermal impedance 4 Typ. output characteristics Z thJC=f(t P) I D=f(V DS); T j=25 °C parameter: D=t p/T parameter: V GS 100 120 10 V 20 V 105 90 0.5 8V 7V I D [A] Z thJC [K/W] 75 0.2 10-1 0.1 60 6V 45 0.05 5.5 V 0.02 30 0.01 5V 15 single pulse 4.5 V 10-2 10-5 0 10-4 10-3 10-2 10-1 100 Rev. 2.1 0 5 10 15 20 V DS [V] t p [s] page 4 20140528 IPI60R099CP 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D=f(V DS); T j=150 °C R DS(on)=f(I D); T j=150 °C parameter: V GS parameter: V GS 50 0.5 7V 8V 10 V 20 V 6V 5.5 V 40 5.5 V 0.4 6V 6.5 V 7V R DS(on) [Ω] I D [A] 30 5V 20 0.3 5V 20 V 0.2 4.5 V 10 0.1 0 0 0 5 10 15 20 0 10 20 V DS [V] 30 40 50 I D [A] 7 Drain-source on-state resistance 8 Typ. transfer characteristics R DS(on)=f(T j); I D=18 A; V GS=10 V I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 0.3 160 0.25 C °25 120 I D [A] R DS(on) [Ω] 0.2 0.15 80 98 % C °150 typ 0.1 40 0.05 0 0 -60 -20 20 60 100 140 180 T j [°C] Rev. 2.1 0 2 4 6 8 10 V GS [V] page 5 20140528 IPI60R099CP 9 Typ. gate charge 10 Forward characteristics of reverse diode V GS=f(Q gate); I D=18 A pulsed I F=f(V SD) parameter: V DD parameter: T j 102 10 25 °C, 98% 150 °C, 98% 8 25 °C 120 V 150 °C 400 V 101 I F [A] V GS [V] 6 4 100 2 10-1 0 0 10 20 30 40 50 0 60 0.5 1 Q gate [nC] 1.5 12 Drain-source breakdown voltage E AS=f(T j); I D=11 A; V DD=50 V V BR(DSS)=f(T j); I D=0.25 mA 1000 700 750 660 V BR(DSS) [V] E AS [mJ] 11 Avalanche energy 500 250 620 580 0 540 20 60 100 140 180 T j [°C] Rev. 2.1 2 V SD [V] -60 -20 20 60 100 140 180 T j [°C] page 6 20140528 IPI60R099CP 13 Typ. capacitances 14 Typ. Coss stored energy C =f(V DS); V GS=0 V; f =1 MHz E oss= f(V DS) 105 20 104 16 Ciss 12 E oss [µJ] C [pF] 103 Coss 2 8 101 4 10 Crss 100 0 0 100 200 300 400 500 V DS [V] Rev. 2.1 0 100 200 300 400 500 600 V DS [V] page 7 20140528 IPI60R099CP Definition of diode switching characteristics Rev. 2.1 page 8 20140528 IPI60R099CP PG-TO262-3-1: Outline Rev. 2.1 page 9 20140528 600VCoolMOS™CPPowerTransistor IPI60R099CP RevisionHistory IPA60R190P6 IPI60R099CP Revision:2014-05-28,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2008-02-19 2013-06-07 Release of final version 2.1 2014-05-28 Marking correction from 60R099P to 6R099P WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Edition2011-08-01 Publishedby InfineonTechnologiesAG 81726München,Germany ©2011InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 10 Rev.2.1,2014-05-28