APPLICATION INFORMATION 2 GHz low noise amplifier with the BFG480W Philips Semiconductors 2 GHz low noise amplifier with the BFG480W ABSTRACT • Description of the product The BFG480W, one of the Philips double polysilicon wideband transistors of the BFG400W series. • Application area Low voltage high frequency wireless applications. • Presented application A low noise amplifier for 2 GHz. • Main results At a frequency of 2 GHz, the amplifier has an insertion power gain of approximately 9.5 dB, a noise figure of approximately 2.2 dB, and a third order intercept point of approximately 10 dBm (measured at input). PHILIPS ELECTRONICS N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. 1999 Dec 14 2 Philips Semiconductors 2 GHz low noise amplifier with the BFG480W INTRODUCTION With the Philips double polysilicon wideband transistor BFG480W, it is possible to design Low Noise Amplifiers (LNAs) for high frequency applications with a low current and a low supply voltage. These amplifiers are well suited for the new generation low voltage high frequency wireless applications. One feature of the BFG480W is that it has a good linearity performance. Therefore the BFG480W is well suited for LNAs with high linearity demands, such as Code Division Multiple Access (CDMA) applications. This application note gives an example of a 2 GHz LNA with the BFG480W. CIRCUIT DESCRIPTION The following initial conditions apply for the amplifier design: • Vsupply ≈ 3.6 V • VCE = 2 V • IC = 21 mA • f = 2 GHz. The circuit is designed to show the following performance: • s212 ≈ 9 dB • NF ≤ 2.5 dB • VSWRIN < 2 • VSWROUT < 2 • IP3i > 9 dBm. The output matching is realised with an LC combination. Also an extra emitter inductance (micro stripline) is used on both emitter-leads to improve the matching and the noise figure. CIRCUIT DIAGRAM R2 R3 handbook, full pagewidth Vsupply C4 C3 L1 W1 R1 50 Ω input C2 50 Ω output C1 µS1, µS2: TR1 L1 L2 µS1 µS2 MGS346 Fig.1 Circuit diagram. 1999 Dec 14 L3 D1 3 W2 Philips Semiconductors 2 GHz low noise amplifier with the BFG480W COMPONENT LIST Table 1 Component list for the 2 GHz LNA COMPONENT VALUE UNIT SIZE, MANUFACTURER PURPOSE, COMMENT TR1 BFG480W SOT343R RF amplifier R1 5.6 kΩ 0603; Philips collector to base bias R2 22 Ω 0603; Philips RF blocking R3 47 Ω 0603; Philips collector series bias; levelling hFE spread R4 0 Ω 0603; Philips (or a short circuit wire) R5 0 Ω 0603; Philips (or a short circuit wire C1 4.7 pF 0603; Philips input match (base coupling) C2 150 pF 0603; Philips output match (collector coupling) C3 5.6 pF 0603; Philips 2 GHz short (L1 to ground) C4 1 nF 0603; Philips RF collector bias decoupling L1 18 nH 0805CS; Coilcraft µS1 see Table 2 emitter induction: micro stripline and via-hole µS2 see Table 2 emitter induction; micro stripline and via-hole PCB FR4 εr ≈ 4.6; d = 0.5 mm Table 2 output match Dimensions of the micro striplines µS1 and µS2 (see Fig.1) DIMENSION VALUE UNIT DESCRIPTION L1 2.5 mm length micro stripline; Zo ≈ 48 Ω L2 1.0 mm length interconnect micro stripline and via-hole area L3 1.0 mm length via-hole W1 0.5 mm width micro stripline W2 1.0 mm width via-hole area D1 0.4 mm diameter of via-hole 1999 Dec 14 4 Philips Semiconductors 2 GHz low noise amplifier with the BFG480W BOARD LAYOUT The layout has been designed with the Hewlett Packard Microwave Design System (HP-MDS). handbook, full pagewidth input µS2 C1 output C2 TR1 R1 R4 µS1 Vsupply C4 L1 R5 R3 R2 C3 MGS347 Fig.2 PCB layout. MEASUREMENTS The measurements have been done under the following conditions (unless otherwise specified): • Supply voltage 3.6 V • Supply current 21 mA • Frequency 2 GHz. Table 3 Measuring results of the 2 GHz LNA SYMBOL PARAMETER CONDITION VALUE UNITS s212 insertion power gain 9.7 VSWRIN input voltage standing wave ratio 1.9 VSWROUT output voltage standing wave ratio 1.2 NF noise figure 2.2 dB IP3i third order intercept point 10 dBm 1999 Dec 14 ∆f = 200 kHz 5 dB Philips Semiconductors 2 GHz low noise amplifier with the BFG480W NOTES 1999 Dec 14 6 Philips Semiconductors 2 GHz low noise amplifier with the BFG480W NOTES 1999 Dec 14 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V, Tel. +45 33 29 3333, Fax. +45 33 29 3905 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615 800, Fax. +358 9 6158 0920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 4099 6161, Fax. +33 1 4099 6427 Germany: Hammerbrookstraße 69, D-20097 HAMBURG, Tel. +49 40 2353 60, Fax. +49 40 2353 6300 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI), Tel. +39 039 203 6838, Fax +39 039 203 6800 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW, Tel. +48 22 5710 000, Fax. +48 22 5710 001 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 58088 Newville 2114, Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SÃO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye, ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 62 5344, Fax.+381 11 63 5777 For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Internet: http://www.semiconductors.philips.com SCA 68 © Philips Electronics N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 125006/01/pp8 Date of release: 1999 Dec 14