APPLICATION INFORMATION 900 MHz low noise amplifier with the BFG480W Philips Semiconductors 900 MHz low noise amplifier with the BFG480W ABSTRACT • Description of the product The BFG480W, one of the Philips double polysilicon wideband transistors of the BFG400W series. • Application area Low voltage high frequency wireless applications. • Presented application A low noise amplifier for 900 MHz. • Main results At a frequency of 900 MHz, the amplifier has an insertion power gain of approximately 15.5 dB, a noise figure of approximately 2 dB, and a third order intercept point of approximately 10 dBm (measured at input). PHILIPS ELECTRONICS N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. 1999 Dec 14 2 Philips Semiconductors 900 MHz low noise amplifier with the BFG480W INTRODUCTION With the Philips double polysilicon wideband transistor BFG480W, it is possible to design Low Noise Amplifiers (LNAs) for high frequency applications with a low current and a low supply voltage. These amplifiers are well suited for the new generation low voltage high frequency wireless applications. A feature of the BFG480W is that it has a good linearity performance. Therefore the BFG480W is well suited for LNAs with high linearity demands, such as Code Division Multiple Access (CDMA) systems. This application note gives an example of a 900 MHz LNA with the BFG480W. CIRCUIT DESCRIPTION The following initial conditions apply for the amplifier design: • Vsupply ≈ 3.6 V • VCE ≈ 2 V • IC ≈ 20 mA • f = 900 MHz. The circuit is designed to show the following performance: • s212 ≈ 15 dB • VSWRIN < 2 • VSWROUT < 2 • NF ≤ 2 dB • IP3i > 9 dBm. The input and output matching is realised with an LC-combination. Also extra emitter inductance (micro stripline) is used on both emitter-leads to improve the matching and the noise figure. CIRCUIT DIAGRAM R1 handbook, full pagewidth C3 R3 C4 C5 C6 +Vsupply C7 L2 L1 input 50 Ω R2 W1 C2 output 50 Ω C1 µS1, µS2: TR1 L1 L2 µS1 µS2 W2 MGS731 Fig.1 Circuit diagram. 1999 Dec 14 L3 D1 3 Philips Semiconductors 900 MHz low noise amplifier with the BFG480W COMPONENT LIST Table 1 Component list for the 900 MHz LNA COMPONENT VALUE TR1 BFG480W R1 8.2 UNIT kΩ SIZE, MANUFACTURER PURPOSE, COMMENT SOT343R Philips RF transistor 0603 Philips collector to base bias R2 10 Ω 0603 Philips improvement RF stability (K-factor > 1) R3 56 Ω 0603 Philips collector bias; levelling hFE spread C1 27 pF 0603 Philips input match (base coupling) C2 27 pF 0603 Philips output match (collector coupling) C3 27 pF 0603 Philips 900 MHz short (L1 and L2 to ground) C4 100 nF 0805 Philips improvement IP3 by decoupling LF IP3 products C5 27 pF 0603 Philips 900 MHz short (L1 and L2 to ground) C6 100 nF 0805 Philips improvement IP3 by decoupling LF IP3 products C7 1 nF 0603 Philips RF decoupling collector bias L1 15 nH 0805CS Coilcraft input match L2 8.2 nH 0805CS Coilcraft output match µS1 see Table 2 emitter induction: micro stripline and via-hole µS2 see Table 2 emitter induction: micro stripline and via-hole PCB FR4 εr = 4.6; d = 0.5 mm Table 2 Dimensions of the micro striplines µS1 and µS2 (see Fig.1) DIMENSION VALUE UNIT DESCRIPTION L1 2.0 mm length micro stripline; Zo ≈ 48 Ω L2 1.0 mm length interconnect micro stripline and via-hole area L3 1.0 mm length via-hole area W1 0.5 mm width micro stripline W2 1.0 mm width via-hole area D1 0.4 mm diameter of via-hole 1999 Dec 14 4 Philips Semiconductors 900 MHz low noise amplifier with the BFG480W BOARD LAYOUT The layout has been designed with the Hewlett Packard Microwave Design System (HP-MDS). handbook, full pagewidth µS1 input C1 output C2 TR1 L1 C4 R2 C3 Vsupply L2 R1 C7 R3 µS2 C5 C6 MGS732 Fig.2 PCB layout. MEASUREMENTS The measurements have been done under the following conditions (unless otherwise stated): • Supply voltage 3.6 V • Supply current 19 mA • Frequency 900 MHz. Table 3 Measuring results of the 900 MHz amplifier SYMBOL PARAMETER CONDITIONS VALUE UNIT s212 insertion power gain 15.5 VSWRIN input voltage standing wave ratio 1.9 VSWROUT output voltage standing wave ratio 1.2 NF noise figure 2.0 dB IP3i third order intercept point 10 dBm 1999 Dec 14 ∆f = 200 kHz; Pi = −20 dBm 5 dB Philips Semiconductors 900 MHz low noise amplifier with the BFG480W NOTES 1999 Dec 14 6 Philips Semiconductors 900 MHz low noise amplifier with the BFG480W NOTES 1999 Dec 14 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 125006/01/pp8 Date of release: 1999 Dec 14