900 MHz low noise amplifier with the BFG480W

APPLICATION INFORMATION
900 MHz low noise amplifier
with the BFG480W
Philips Semiconductors
900 MHz low noise amplifier with the BFG480W
ABSTRACT
• Description of the product
The BFG480W, one of the Philips double polysilicon wideband transistors of the BFG400W series.
• Application area
Low voltage high frequency wireless applications.
• Presented application
A low noise amplifier for 900 MHz.
• Main results
At a frequency of 900 MHz, the amplifier has an insertion power gain of approximately 15.5 dB, a noise figure of
approximately 2 dB, and a third order intercept point of approximately 10 dBm (measured at input).
 PHILIPS ELECTRONICS N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright
owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its
use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property
rights.
1999 Dec 14
2
Philips Semiconductors
900 MHz low noise amplifier with the BFG480W
INTRODUCTION
With the Philips double polysilicon wideband transistor BFG480W, it is possible to design Low Noise Amplifiers (LNAs)
for high frequency applications with a low current and a low supply voltage. These amplifiers are well suited for the new
generation low voltage high frequency wireless applications. A feature of the BFG480W is that it has a good linearity
performance. Therefore the BFG480W is well suited for LNAs with high linearity demands, such as Code Division
Multiple Access (CDMA) systems. This application note gives an example of a 900 MHz LNA with the BFG480W.
CIRCUIT DESCRIPTION
The following initial conditions apply for the amplifier design:
• Vsupply ≈ 3.6 V
• VCE ≈ 2 V
• IC ≈ 20 mA
• f = 900 MHz.
The circuit is designed to show the following performance:
• s212 ≈ 15 dB
• VSWRIN < 2
• VSWROUT < 2
• NF ≤ 2 dB
• IP3i > 9 dBm.
The input and output matching is realised with an LC-combination. Also extra emitter inductance (micro stripline) is used
on both emitter-leads to improve the matching and the noise figure.
CIRCUIT DIAGRAM
R1
handbook, full pagewidth
C3
R3
C4
C5
C6
+Vsupply
C7
L2
L1
input
50 Ω
R2
W1
C2
output
50 Ω
C1
µS1,
µS2:
TR1
L1
L2
µS1
µS2
W2
MGS731
Fig.1 Circuit diagram.
1999 Dec 14
L3
D1
3
Philips Semiconductors
900 MHz low noise amplifier with the BFG480W
COMPONENT LIST
Table 1 Component list for the 900 MHz LNA
COMPONENT
VALUE
TR1
BFG480W
R1
8.2
UNIT
kΩ
SIZE, MANUFACTURER
PURPOSE, COMMENT
SOT343R Philips
RF transistor
0603 Philips
collector to base bias
R2
10
Ω
0603 Philips
improvement RF stability (K-factor > 1)
R3
56
Ω
0603 Philips
collector bias; levelling hFE spread
C1
27
pF
0603 Philips
input match (base coupling)
C2
27
pF
0603 Philips
output match (collector coupling)
C3
27
pF
0603 Philips
900 MHz short (L1 and L2 to ground)
C4
100
nF
0805 Philips
improvement IP3 by decoupling LF IP3
products
C5
27
pF
0603 Philips
900 MHz short (L1 and L2 to ground)
C6
100
nF
0805 Philips
improvement IP3 by decoupling LF IP3
products
C7
1
nF
0603 Philips
RF decoupling collector bias
L1
15
nH
0805CS Coilcraft
input match
L2
8.2
nH
0805CS Coilcraft
output match
µS1
see Table 2
emitter induction: micro stripline and via-hole
µS2
see Table 2
emitter induction: micro stripline and via-hole
PCB
FR4
εr = 4.6; d = 0.5 mm
Table 2
Dimensions of the micro striplines µS1 and µS2 (see Fig.1)
DIMENSION
VALUE
UNIT
DESCRIPTION
L1
2.0
mm
length micro stripline; Zo ≈ 48 Ω
L2
1.0
mm
length interconnect micro stripline and via-hole area
L3
1.0
mm
length via-hole area
W1
0.5
mm
width micro stripline
W2
1.0
mm
width via-hole area
D1
0.4
mm
diameter of via-hole
1999 Dec 14
4
Philips Semiconductors
900 MHz low noise amplifier with the BFG480W
BOARD LAYOUT
The layout has been designed with the Hewlett Packard Microwave Design System (HP-MDS).
handbook, full pagewidth
µS1
input
C1
output
C2
TR1
L1
C4
R2
C3
Vsupply
L2
R1
C7
R3
µS2
C5
C6
MGS732
Fig.2 PCB layout.
MEASUREMENTS
The measurements have been done under the following conditions (unless otherwise stated):
• Supply voltage 3.6 V
• Supply current 19 mA
• Frequency 900 MHz.
Table 3
Measuring results of the 900 MHz amplifier
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
s212
insertion power gain
15.5
VSWRIN
input voltage standing wave ratio
1.9
VSWROUT
output voltage standing wave ratio
1.2
NF
noise figure
2.0
dB
IP3i
third order intercept point
10
dBm
1999 Dec 14
∆f = 200 kHz; Pi = −20 dBm
5
dB
Philips Semiconductors
900 MHz low noise amplifier with the BFG480W
NOTES
1999 Dec 14
6
Philips Semiconductors
900 MHz low noise amplifier with the BFG480W
NOTES
1999 Dec 14
7
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SCA 68
© Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125006/01/pp8
Date of release: 1999
Dec 14