DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BFG480W NPN wideband transistor Product specification Supersedes data of 1998 Jul 09 1998 Oct 21 NXP Semiconductors Product specification NPN wideband transistor BFG480W FEATURES PINNING High power gain PIN DESCRIPTION High efficiency 1 emitter Low noise figure 2 base High transition frequency 3 emitter Emitter is thermal lead 4 collector Low feedback capacitance Linear and non-linear operation. handbook, halfpage 3 4 2 1 APPLICATIONS RF front end with high linearity system demands (CDMA) Common emitter class AB driver. Top view DESCRIPTION MSB842 Marking code: P6. NPN double polysilicon wideband transistor with buried layer for low voltage applications in a 4-pin dual-emitter SOT343R plastic package. Fig.1 Simplified outline SOT343R. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCEO collector-emitter voltage open base 4.5 V IC collector current (DC) 80 250 mA Ptot total power dissipation Ts 60 C 360 mW fT transition frequency IC = 80 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C 21 GHz Gmax maximum gain IC = 80 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C 16 dB F noise figure IC = 8 mA; VCE = 2 V; f = 2 GHz; S = opt 1.8 dB Gp power gain Pulsed; class-AB; < 1 : 2; tp = 5 ms; VCE = 3.6 V; f = 2 GHz; PL = 100 mW 13.5 dB C collector efficiency Pulsed; class-AB; < 1 : 2; tp = 5 ms; VCE = 3.6 V; f = 2 GHz; PL = 100 mW 45 % CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. 1998 Oct 21 2 NXP Semiconductors Product specification NPN wideband transistor BFG480W LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter 14.5 V VCEO collector-emitter voltage open base 4.5 V VEBO emitter-base voltage open collector 1 V IC collector current (DC) 250 mA Ptot total power dissipation 360 mW Tstg storage temperature 65 +150 C Tj operating junction temperature 150 C Ts 60 C; note 1; see Fig.2 Note 1. Ts is the temperature at the soldering point of the emitter pins. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point MGR623 500 Ptot handbook, halfpage (mW) 400 300 200 100 0 0 40 80 120 160 Ts (°C) Fig.2 Power derating curve. 1998 Oct 21 3 VALUE UNIT 250 K/W NXP Semiconductors Product specification NPN wideband transistor BFG480W CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS IC = 50 A; IE = 0 V(BR)CBO collector-base breakdown voltage V(BR)CEO collector-emitter breakdown voltage IC = 5 mA; IB = 0 V(BR)EBO emitter-base breakdown voltage IE = 100 A; IC = 0 MIN. TYP. MAX. UNIT 14.5 V 4.5 V 1 V nA ICBO collector-base leakage current VCE = 5 V; VBE = 0 70 hFE DC current gain IC = 80 mA; VCE = 2 V; see Fig.3 40 60 100 Cc collector capacitance IE = ie = 0; VCB = 2 V; f = 1 MHz 1.4 Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz 2.2 pF Cre feedback capacitance IC = 0; VCB = 2 V; f = 1 MHz; see Fig.4 340 fF fT transition frequency IC = 80 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C; see Fig.5 21 GHz Gmax maximum power gain; note 1 IC = 80 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C; see Figs 7 and 8 16 dB insertion power gain IC = 80 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C; see Fig.8 12 dB noise figure IC = 8 mA; VCE = 2 V; f = 900 MHz; S = opt; see Fig.13 1.2 dB IC = 8 mA; VCE = 2 V; f = 2 GHz; S = opt; see Fig.13 1.8 dB S 21 2 F pF PL1 output power at 1 dB gain compression Class-AB; < 1 : 2; tp = 5 ms; VCE = 3.6 V; ICQ = 1 mA; f = 2 GHz 20 dBm ITO third order intercept point IC = 80 mA; VCE = 2 V; f = 2 GHz; ZS = ZS opt; ZL = ZL opt; note 2 28 dBm Notes 1. Gmax is the maximum power gain, if K > 1. If K < 1 then Gmax = MSG; see Figs 6, 7 and 8. 2. ZS is optimized for noise; ZL is optimized for gain. 1998 Oct 21 4 NXP Semiconductors Product specification NPN wideband transistor BFG480W MGR624 MGR625 800 100 handbook, halfpage handbook, halfpage Cre hFE (fF) 80 600 60 400 40 200 20 0 0 0 50 100 IC (mA) 0 150 2 3 4 5 VCB (V) VCE = 2 V. Fig.3 1 IC = 0; f = 1 MHz. DC current gain as a function of collector current; typical values. Fig.4 MGR627 MGR626 30 30 handbook, halfpage handbook, halfpage fT (GHz) 20 10 10 102 IC (mA) 1998 Oct 21 Gmax S21 0 103 0 40 80 120 160 IC (mA) f = 2 GHz; VCE = 2 V; Tamb = 25 C. Fig.5 MSG gain (dB) 20 0 10 Feedback capacitance as a function of collector-base voltage; typical values. f = 900 MHz; VCE = 2 V. Transition frequency as a function of collector current; typical values. Fig.6 5 Gain as a function of collector current; typical values. NXP Semiconductors Product specification NPN wideband transistor BFG480W MGR629 MGR628 50 20 handbook, halfpage handbook, halfpage gain (dB) gain (dB) Gmax 16 40 S21 12 MSG 30 S21 Gmax 8 20 4 10 0 0 0 40 80 120 160 102 10 IC (mA) VCE = 2 V; f = 2 GHz. Fig.7 1998 Oct 21 103 f (MHz) 104 IC = 80 mA; VCE = 2 V. Gain as a function of collector current; typical values. Fig.8 6 Gain as a function of frequency; typical values. NXP Semiconductors Product specification NPN wideband transistor BFG480W 90° handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 0.6 3 GHz 0.2 0.4 5 0.2 180° 0.2 0 0.5 1 2 5 0° 0 40 MHz 5 0.2 0.5 2 −135° −45° 1 1.0 MGR630 −90° IC = 80 mA; VCE = 2 V; Zo = 50 Fig.9 Common emitter input reflection coefficient (S11); typical values. 90° handbook, full pagewidth 135° 45° 40 MHz 25 20 15 10 5 3 GHz 180° −135° 0° −45° −90° MGR631 IC = 80 mA; VCE = 2 V. Fig.10 Common emitter forward transmission coefficient (S21); typical values. 1998 Oct 21 7 NXP Semiconductors Product specification NPN wideband transistor BFG480W 90° handbook, full pagewidth 135° 45° 3 GHz 0.5 0.4 0.3 0.2 0.1 180° 0° 40 MHz −135° −45° −90° MGR632 IC = 80 mA; VCE = 2 V. Fig.11 Common emitter reverse transmission coefficient (S12); typical values. 90° handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 0.6 0.2 0.4 5 0.2 3 GHz 180° 0.2 0 0.5 1 2 5 0° 0 40 MHz 5 0.2 0.5 2 −135° −45° 1 1.0 −90° MGR633 IC = 80 mA; VCE = 2 V; Zo = 50 Fig.12 Common emitter output reflection coefficient (S22); typical values. 1998 Oct 21 8 NXP Semiconductors Product specification NPN wideband transistor BFG480W Noise data VCE = 2 V; typical values. f (MHz) 900 2000 IC (mA) Fmin (dB) mag angle rn () 2 1.1 0.41 96.1 0.21 4 1.1 0.31 106.6 0.14 Fmin 6 1.2 0.27 118.4 0.12 (dB) 8 1.2 0.26 131.7 0.10 10 1.3 0.28 143.2 0.10 20 1.6 0.39 166.2 0.07 40 2.0 0.49 176.0 0.07 60 2.3 0.57 179.5 0.07 80 2.9 0.45 177.3 0.18 2 2.4 0.57 171.9 0.09 4 2.0 0.49 178.9 0.08 6 1.8 0.46 175.7 0.09 8 1.8 0.44 171.7 0.09 10 1.8 0.43 168.4 0.09 12 1.8 0.44 165.3 0.10 14 1.8 0.44 163.7 0.10 20 1.9 0.46 158.3 0.11 40 2.3 0.52 150.2 0.14 60 2.6 0.56 147.7 0.18 80 2.8 0.60 146.1 0.22 MGR634 4 handbook, halfpage 3 2 GHz 2 900 MHz 1 0 0 20 40 60 IC (mA) 80 VCE = 2 V. Fig.13 Minimum noise figure as a function of collector current; typical values. APPLICATION INFORMATION RF performance at Ts 60 C in a common emitter test circuit (see Figs 18 and 19). MODE OF OPERATION f (GHz) VCE (V) ICQ (mA) PL (mW) Gp (dB) C (%) Pulsed; class-AB; < 1 : 2; tp = 5 ms 2 3.6 1 100 typ. 13.5 typ. 45 1998 Oct 21 9 NXP Semiconductors Product specification NPN wideband transistor BFG480W MGR635 MGR636 80 16 handbook, halfpage ηC (%) Gp (dB) Gp 80 16 handbook, halfpage ηC (%) Gp (dB) Gp 60 12 8 40 8 40 4 20 4 20 0 0 12 ηC ηC 0 10 14 18 22 PL (dBm) 0 10 26 Pulsed, class-AB operation; < 1 ; 2; tp = 5 ms. f = 2 GHz; VCE = 2.4 V; ICQ = 1 mA; tuned at PL = 100 mW. 14 18 22 PL (dBm) 26 Pulsed, class-AB operation; < 1 ; 2; tp = 5 ms. f = 2 GHz; VCE = 3.6 V; ICQ = 1 mA; tuned at PL = 100 mW. Fig.14 Power gain and collector efficiency as a function of load power; typical values. Fig.15 Power gain and collector efficiency as a function of load power; typical values. MGR637 10 Zi 60 MGR638 30 handbook, halfpage handbook, halfpage ri (Ω) RL ZL (Ω) 8 20 6 4 10 2 xi XL 0 1.8 1.85 1.9 1.95 f (GHz) 0 1.8 2 1.9 1.95 f (GHz) 2 VCE = 3.6 V; ICQ = 1 mA; PL = 100 mW; Ts 60 C. VCE = 3.6 V; ICQ = 1 mA; PL = 100 mW; Ts 60 C. Fig.16 Input impedance as function of frequency (series components); typical values. 1998 Oct 21 1.85 Fig.17 Load impedance as a function of frequency (series components); typical values. 10 NXP Semiconductors Product specification NPN wideband transistor BFG480W VC handbook, full pagewidth VS R1 L5 R2 R3 C7 C6 TR1 C3 L4 L1 RF input 50 Ω L3 C5 L2 C1 RF output 50 Ω DUT C4 C2 MGM221 Fig.18 Common emitter test circuit for class-AB operation at 2 GHz. List of components used in test circuit (see Figs 18 and 19) COMPONENT DESCRIPTION VALUE DIMENSIONS C1, C5 multilayer ceramic chip capacitor; note 1 C2, C4 multilayer ceramic chip capacitor; note 1 2 pF C3, C6 multilayer ceramic chip capacitor, note 1 15 pF C7 multilayer ceramic chip capacitor; note 1 1 nF L1, L4 stripline; note 2 100 18 x 0.2 mm L2 stripline; note 2 50 5 x 0.8 mm L3 stripline; note 2 50 6 x 0.8 mm L5 Grade 4S2 Ferroxcube chip bead R1 metal film resistor 220 ; 0.4 W R2, R3 metal film resistor 10 ; 0.4 W TR1 NPN transistor BC817 CATALOGUE No. 24 pF 4330 030 36300 9335 895 20215 Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. The striplines are on a double copper-clad printed-circuit board with PTFE fibre-glass dielectric (r = 6.15, tan = 0.0019); thickness 0.64 mm, copper cladding = 35 m. 1998 Oct 21 11 NXP Semiconductors Product specification NPN wideband transistor BFG480W 45 handbook, full pagewidth 35 VS VC R1 TR1 L5 R2 R3 C3 C7 C6 L1 C1 L4 C5 L2 L3 input C2 DUT C4 output MBK827 Dimensions in mm. The components are situated on one side of the copper-clad PTFE fibre-glass board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization. Fig.19 Printed-circuit board and component layout for 2 GHz class-AB test circuit in Fig.18. 1998 Oct 21 12 NXP Semiconductors Product specification NPN wideband transistor BFG480W PACKAGE OUTLINE Plastic surface-mounted package; reverse pinning; 4 leads D SOT343R E B A X HE y v M A e 3 4 Q A A1 c 2 w M B 1 bp Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.4 0.3 0.7 0.5 0.25 0.10 2.2 1.8 1.35 1.15 1.3 1.15 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-05-21 06-03-16 SOT343R 1998 Oct 21 EUROPEAN PROJECTION 13 NXP Semiconductors Product specification NPN wideband transistor BFG480W DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. DEFINITIONS Product specification The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. DISCLAIMERS Limited warranty and liability Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. 1998 Oct 21 14 NXP Semiconductors Product specification NPN wideband transistor BFG480W Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Terms and conditions of commercial sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 1998 Oct 21 15 NXP Semiconductors provides High Performance Mixed Signal and Standard Product solutions that leverage its leading RF, Analog, Power Management, Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2010 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R77/03/pp16 Date of release: 1998 Oct 21