APPLICATION INFORMATION 900 MHz driver amplifier with the BFG425W Philips Semiconductors Application information 900 MHz driver amplifier with the BFG425W ABSTRACT • Description of the product The BFG425W is one of the Philips double polysilicon wideband transistors of the BFG400W series. • Application area Low voltage high frequency wireless applications. • Presented application A driver amplifier for 900 MHz. • Main results At a frequency of 900 MHz and an ambient temperature of 25° C, the amplifier has a power gain greater than 12 dB and a noise figure less than 2 dB. PHILIPS ELECTRONICS N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. 1999 Dec 22 2 Philips Semiconductors Application information 900 MHz driver amplifier with the BFG425W INTRODUCTION With the Philips double polysilicon wideband transistor BFG425W, it is possible to design driver amplifiers for high frequency applications with a low current and a low supply voltage. These amplifiers are well suited for the new generation low voltage high frequency wireless applications. This application note gives an example of a driver amplifier with the BFG425W for a frequency of 900 MHz. CIRCUIT DESCRIPTION The following initial conditions apply for the amplifier design: • Vsupply = 3.0 V • Isupply ≈ 10 mA • f = 900 MHz. The circuit is designed to show the following performance: • GP > 12 dB • VSWRIN < 2 • VSWROUT < 2. The input and output matching is realised with an RC combination. Also an extra emitter inductance (micro stripline) is used on both emitter leads to improve the matching. This emitter inductance is not necessary. The place of the via-holes is not critical. CIRCUIT DIAGRAM Vsupply handbook, full pagewidth C3 C4 R3 C2 R1 input 50 Ω output 50 Ω R2 W1 C1 TR1 µS1, µS2 L1 L2 µS1 µS2 MGS820 Fig.1 Circuit diagram. 1999 Dec 22 3 L3 D1 W2 Philips Semiconductors Application information 900 MHz driver amplifier with the BFG425W COMPONENT LIST Table 1 Component list for the 900 MHz driver amplifier COMPONENT VALUE UNIT SIZE, MANUFACTURER PURPOSE, COMMENT TR1 BFG425W SOT343R Philips RF transistor R1 3.3 kΩ 0603 Philips bias R2 10 Ω 0603 Philips improving RF stability (K-factor) R3 150 Ω 0603 Philips C1 150 pF 0603 Philips input match C2 150 pF 0603 Philips output match C3 27 pF 0603 Philips 900 MHz short C4 1 nF 0603 Philips µS1 see Table 2 emitter induction: micro stripline and via-hole µS2 see Table 2 emitter induction: micro stripline and via-hole PCB FR4 εr ≈ 4.6; d = 0.5 mm Table 2 RF decoupling Dimensions of the micro striplines µS1 and µS2 (see Fig.1) COMPONENT VALUE UNIT DESCRIPTION L1 1.0 mm length micro stripline; Zo ≈ 48Ω L2 1.0 mm length interconnect micro stripline and via-hole area L3 1.0 mm length via-hole area W1 0.5 mm width micro stripline W2 1.0 mm width via-hole area D1 0.4 mm diameter of via-hole 1999 Dec 22 4 Philips Semiconductors Application information 900 MHz driver amplifier with the BFG425W BOARD LAYOUT An existing printed-circuit board, which was developed for low noise amplifier applications, has been adapted for this driver amplifier. The original board was designed with the Hewlett Packard Microwave Design System (HP-MDS). handbook, full pagewidth input µS1 C1 output C2 TR1 R1 R2 Vsupply R3 µS2 C3 C4 MGS821 Fig.2 PCB layout. MEASUREMENTS The measurements have been done under the following conditions (unless otherwise specified): • Supply voltage 3.0 V • Supply current 11.0 mA • Frequency 900 MHz • Ambient temperature 25° C. Table 3 Measuring results of the 900 MHz driver amplifier SYMBOL PARAMETER CONDITION VALUE UNIT s212 insertion power gain Pi = −30 dBm GP power gain Pi = −10 dBm 14.4 dB Pi = −10 dBm; Tamb < 0 °C (freeze spray) ≈10 dB Pi = −30 dBm 1.4 VSWROUT output voltage standing wave ratio Pi = −30 dBm 1.8 NF noise figure Pi = −30 dBm <2.0 dB IP3o third order intercept point not measured − dBm VSWRIN 1999 Dec 22 input voltage standing wave ratio 5 16.7 dB Philips Semiconductors Application information 900 MHz driver amplifier with the BFG425W NOTES 1999 Dec 22 6 Philips Semiconductors Application information 900 MHz driver amplifier with the BFG425W NOTES 1999 Dec 22 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 125006/01/pp8 Date of release: 1999 Dec 22