NTK3139P Power MOSFET −20 V, −780 mA, Single P−Channel with ESD Protection, SOT−723 Features • • • • • http://onsemi.com P−channel Switch with Low RDS(on) 44% Smaller Footprint and 38% Thinner than SC−89 Low Threshold Levels Allowing 1.5 V RDS(on) Rating Operated at Low Logic Level Gate Drive These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS −20 V RDS(on) TYP ID Max 0.38 W @ −4.5 V −780 mA 0.52 W @ −2.5 V −660 mA 0.70 W @ −1.8 V −100 mA 0.95 W @ −1.5 V −100 mA Applications • Load/Power Switching • Interfacing, Logic Switching • Battery Management for Ultra Small Portable Electronics SOT−723 (3−LEAD) 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS −20 V Gate−to−Source Voltage VGS ±6 V ID −780 mA Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State TA = 25°C TA = 85°C −570 tv5s TA = 25°C −870 Steady State TA = 25°C PD tv5s Continuous Drain Current (Note 2) Steady State Power Dissipation (Note 2) ID TA = 85°C TA = 25°C MARKING DIAGRAM mA −660 −480 KD M 310 mW IDM −1.2 A Operating Junction and Storage Temperature TJ, TSTG −55 to 150 °C Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C tp = 10 ms 1 − Gate 2 − Source 3 − Drain mW 450 550 TA = 25°C 2 Top View PD Pulsed Drain Current 1 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) 2. Surface mounted on FR4 board using the minimum recommended pad size SOT−723 CASE 631AA STYLE 5 1 KD = Specific Device Code M = Date Code ORDERING INFORMATION Device Package NTK3139PT1G NTK3139PT1H NTK3139PT5G NTK3139PT5H Shipping† 4000 / Tape & Reel SOT−723 Pb−Free 8000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013 September, 2013 − Rev. 1 1 Publication Order Number: NTK3139P/D NTK3139P THERMAL RESISTANCE RATINGS Symbol Max Unit Junction−to−Ambient – Steady State (Note 3) Parameter RqJA 280 °C/W Junction−to−Ambient – t = 5 s (Note 3) RqJA 228 Junction−to−Ambient – Steady State Minimum Pad (Note 4) RqJA 400 3. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) 4. Surface mounted on FR4 board using the minimum recommended pad size MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current VGS = 0 V, ID = −250 mA −20 −16.5 ID = −250 mA, Reference to 25°C VGS = 0 V, VDS = −16V V mV/°C TJ = 25°C −1.0 TJ = 125°C −2.0 IGSS VDS = 0 V, VGS = ±4.5 V VGS(TH) VGS = VDS, ID = −250 mA mA ±2.0 mA −1.2 V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient 2.4 VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) Forward Transconductance −0.45 gFS mV/°C VGS = −4.5 V, ID = −780 mA 0.38 0.48 VGS = −2.5 V, ID = −660 mA 0.52 0.67 VGS = −1.8 V, ID = −100 mA 0.70 0.95 VGS = −1.5 V, ID = −100 mA 0.95 2.20 VDS = −10 V, ID = −540 mA 1.2 W S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VGS = 0 V, f = 1 MHz, VDS = −16 V 113 170 15 25 9.0 15 pF SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6) Turn On Delay Time Rise Time TurnOff Delay Time Fall Time td(ON) tr td(OFF) 9.0 VGS = −4.5 V, VDS = −10 V, ID = −200 mA, RG = 10 W tf 5.8 ns 32.7 20.3 DRAIN SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = −350 mA TJ = 25°C −0.8 13.2 VGS = 0 V, dISD/dt = 100 A/ms, IS = −1.0 A, VDD = −20 V QRR http://onsemi.com 2 V ns 11.8 1.4 5.0 5. Pulse Test: pulse width = 300 ms, duty cycle = 2% 6. Switching characteristics are independent of operating junction temperatures −1.2 nC NTK3139P TYPICAL CHARACTERISTICS VDS ≥ −5 V 1.5 TJ = 25°C −ID, DRAIN CURRENT (A) −2.2 V −2.0 V 1.0 −1.8 V −1.6 V −1.5 V 0.5 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 1.8 VGS = −4.5 V to −2.5 V −1.4 V 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 0.9 TJ = 125°C 0.3 TJ = −55°C 0.75 1.75 2.25 Figure 2. Transfer Characteristics ID = −0.78 A TJ = 25°C 2.0 1.5 1.0 0.5 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 0.8 TJ = 25°C 0.7 VGS = −2.5 V 0.6 0.5 VGS = −4.5 V 0.4 0.3 0.2 0.4 0.7 0.9 1.2 1.4 1.7 1.9 −ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 10,000 1.2 VGS = 0 V VGS = −1.5 V, ID = −100 mA −IDSS, LEAKAGE (nA) 1.0 VGS = −1.8 V, ID = −100 mA 0.8 1.25 Figure 1. On−Region Characteristics −VGS, GATE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) TJ = 25°C 0.6 −VGS, GATE−TO−SOURCE VOLTAGE (V) 2.5 1 1.2 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 3.0 0 1.5 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) −ID, DRAIN CURRENT (A) 2.0 1000 VGS = −2.5 V, ID = −550 mA 0.6 0.4 TJ = 150°C TJ = 125°C 100 VGS = −4.5 V, ID = −630 mA 0.2 −60 −35 −10 15 40 65 90 10 140 115 5.0 10 15 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 20 NTK3139P TYPICAL CHARACTERISTICS 150 120 VDD = −10 V ID = −200 mA VGS = −4.5 V t, TIME (ns) td(off) 90 60 30 0 tf 10 td(on) tr Coss Crss 0 2 4 6 8 10 12 14 16 18 1 20 1 10 100 −DRAIN−TO−SOURCE VOLTAGE (V) RG, GATE RESISTANCE (W) Figure 7. Capacitance Variation Figure 8. Resistive Switching Time Variation vs. Gate Resistance 2.0 −IS, SOURCE CURRENT (A) C, CAPACITANCE (pF) 100 VGS = 0 V TJ = 25°C Ciss 150°C VGS = 0 V 125°C 1.5 25°C 1.0 TJ = −55°C 0.5 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 −VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current http://onsemi.com 4 1.2 NTK3139P PACKAGE DIMENSIONS SOT−723 CASE 631AA ISSUE D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. −X− D b1 A −Y− 3 E 1 2X HE 2 2X e b C 0.08 X Y SIDE VIEW TOP VIEW 3X 1 3X DIM A b b1 C D E e HE L L2 L L2 RECOMMENDED SOLDERING FOOTPRINT* BOTTOM VIEW MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.29 REF 0.15 0.20 0.25 STYLE 5: PIN 1. GATE 2. SOURCE 3. DRAIN 2X 0.40 2X 0.27 PACKAGE OUTLINE 1.50 3X 0.52 0.36 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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